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20 Nov 1995

Volume 67, Issue 21, pp. 3057-3211

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Continuous wave operation of a vertical transition quantum cascade laser above T=80 K

Jérôme Faist, Federico Capasso, Carlo Sirtori, Deborah L. Sivco, Albert L. Hutchinson, and Alfred Y. Cho

Appl. Phys. Lett. 67, 3057 (1995); http://dx.doi.org/10.1063/1.114863 (3 pages) | Cited 81 times

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Continuous wave operation of a quantum cascade laser at λ=4.6 μm is reported above liquid nitrogen temperature. Optical powers of 15 mW at 50 K and 2 mW at 85 K are reported. The single mode spectrum is temperature tunable over 1.8 cm −1. These devices also operated in pulse mode with 20 mW peak power at 200 K. Gain measurements show evidence for ultralow linewidth enhancement factor α<0.1. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Modulational instability oscillation and solitary waves in a nonlinear dispersive cavity with parametric gain

S. Longhi and A. Geraci

Appl. Phys. Lett. 67, 3060 (1995); http://dx.doi.org/10.1063/1.114864 (3 pages) | Cited 8 times

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We investigate the modulational instability in a nonlinear dispersive cavity which is driven to oscillation by degenerate parametric interaction in a nonlinear χ(2) medium. Our analysis predicts the existence of stable temporal dissipative structures mediated by modulational instability when oscillation occurs through a subcritical instability. Decreasing the parametric gain below the subcritical bifurcation point, stability of these structures is broken and complicated temporal patterns in the form of weakly interacting solitary waves are predicted. © 1995 American Institute of Physics.
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42.65.Sf Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics
42.65.Tg Optical solitons; nonlinear guided waves
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Fabrication of low‐loss and high‐Δn single‐mode fluoride fiber for 1.3 μm praseodymium‐doped fiber amplifiers

Kazuo Fujiura, Terutoshi Kanamori, Yasutake Ohishi, Yukio Terunuma, Koichi Nakagawa, Shoichi Sudo, and Kiyomasa Sugii

Appl. Phys. Lett. 67, 3063 (1995); http://dx.doi.org/10.1063/1.114865 (3 pages) | Cited 3 times

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The crystallization properties of ZrF4‐based fluoride glasses containing PbF2 are clarified and single‐mode fibers for an optical amplifier operating at 1.3 μm are fabricated. The crystallization tendency increases as the PbF2 content of the glasses increases and the optimum PbF2 content ranges from 11 to 12.5 mol % in terms of glass stability and refractive indices. The 4%‐Δn single‐mode fiber with a transmission loss of 44 dB/km at 1.2 μm was prepared as the amplifier host fiber. ZrF4‐based glass with a PbF2 content of 11 mol % was used as a core glass and HfF4‐based glass was used as a cladding glass. © 1995 American Institute of Physics.
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42.55.Wd Fiber lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.81.Bm Fabrication, cladding, and splicing

Optical activity in the vacancy ordered III2VI3 compound semiconductor (Ga0.3In0.7)2Se3

J. Ye, T. Yoshida, Y. Nakamura, and O. Nittono

Appl. Phys. Lett. 67, 3066 (1995); http://dx.doi.org/10.1063/1.114866 (3 pages) | Cited 18 times

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Great optical activity is realized by a vacancy ordered III2VI3 compound (Ga0.3In0.7)2Se3 with point group 6 which is based on wurtzite structure and characterized by the screw arrangement of cation atoms along the c axis. The transition of the fundamental absorption edge is direct and the band gap is estimated to be 2.05 eV. An anomalous optical rotatory dispersion around the absorption edge is observed and the maximum rotatory power of 125°/mm is obtained at λ=620 nm. The optical activity for red light is always above 60°/mm, that is 4–6 times as large as that of α quartz. (Ga0.3In0.7)2Se3 single crystal is very useful, especially for the He–Ne laser as an optically active substance; the rotatory power reaches 103°/mm, being more than 5 times of α quartz. © 1995 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers
61.72.J- Point defects and defect clusters
78.20.Ek Optical activity

Nanometer‐scale imaging of potential profiles in optically excited n‐i‐p‐i heterostructure using Kelvin probe force microscopy

A. Chavez‐Pirson, O. Vatel, M. Tanimoto, H. Ando, H. Iwamura, and H. Kanbe

Appl. Phys. Lett. 67, 3069 (1995); http://dx.doi.org/10.1063/1.114867 (3 pages) | Cited 28 times

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We report on measurements of the potential profile of a GaAs/AlGaAs n‐i‐p‐i multiple quantum well structure using a scanning Kelvin probe force microscope (KFM). Using this novel technique we directly measure with meV precision and sub‐100 nm spatial resolution the potential difference between n‐i‐p‐i layers with and without external optical excitation. The measured potential profiles, which have not been directly imaged previously, agree well with potential profiles calculated for optically excited n‐i‐p‐i structures, but modified by band bending effects at the surface. © 1995 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors

New grating fabrication technology for optoelectronic devices: Cascaded self‐induced holography

C. H. Lin, Z. H. Zhu, and Y. H. Lo

Appl. Phys. Lett. 67, 3072 (1995); http://dx.doi.org/10.1063/1.114868 (3 pages) | Cited 2 times

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A method of fabricating submicron gratings for optoelectronic devices from a glass mask was proposed and demonstrated. The glass mask has gratings on both sides with a period of at least four times of the final feature size. By modifying the grating periods on the mask, one can achieve multiple‐period gratings with a very fine period spacing for advanced wavelength division multiplexing (WDM) devices. In this letter, we demonstrated 0.5 μm second‐order gratings for 1.55 μm distributed‐feedback lasers and gratings with a 6 Å period difference for WDM laser arrays using only optical sources. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Dj Gratings
42.82.Cr Fabrication techniques; lithography, pattern transfer

Observation of very efficient hybrid mode locking in an InGaAs/InGaAsP multiple quantum well distributed Bragg reflector laser diode

Dug Y. Kim, Dong‐Sun Seo, and Hai‐Feng Liu

Appl. Phys. Lett. 67, 3075 (1995); http://dx.doi.org/10.1063/1.114869 (3 pages) | Cited 6 times

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Unlike conventional hybrid mode‐locking methods, a very low power (−1 dBm from a rf synthesizer) rf sinusoidal feeding signal is applied to the saturable absorber of the laser and ultrastable mode‐locked pulse train at 34 GHz repetition rate is achieved. A new physical mechanism for the efficient hybrid mode locking is proposed. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Spectroscopic ellipsometry of RuO2 films prepared by metalorganic chemical vapor deposition

Peter Hones, Tobias Gerfin, and Michael Grätzel

Appl. Phys. Lett. 67, 3078 (1995); http://dx.doi.org/10.1063/1.114870 (3 pages) | Cited 12 times

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Conducting thin films on RuO2 were deposited on glass by metalorganic chemical vapor deposition using tris‐trifluoroacetylacetonate‐ruthenium (III) [Ru(tfa)3] as precursor. Smooth, specular, and well adherent films were grown at temperatures as low as 400 °C, if the reaction gas contained water. RuO2 was the only phase detected by x‐ray diffraction. The films were investigated by spectroscopic ellipsometry in the energy range of 1.5 to 5.0 eV. Thereby, the real (ε1) and imaginary (ε2) parts of the dielectric function were determined at room temperature. The optical constants could be described by three harmonic oscillators in combination with a Drude term for free‐charge carriers. © 1995 American Institute of Physics.  
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Thermo‐optic tuning sensitivity of phase matched second‐harmonic generation in 2‐amino‐5‐nitropyridinium‐dihydrogen crystals

S. Khodja, D. Josse, and J. Zyss

Appl. Phys. Lett. 67, 3081 (1995); http://dx.doi.org/10.1063/1.114871 (3 pages) | Cited 1 time

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The thermal sensitivity of the efficient type II angular phase matching configuration for frequency doubling in 2‐amino‐5‐nitropyridinium‐dihydrogen crystals has been measured accurately. The measured thermo‐optic tuning sensitivity was found to be −0.303 mrad/ °C. A wavelength shift of the noncritical phase‐matching angle resulting from the thermal effect is shown to correspond to a dλ/dT coefficient of 0.176 nm/ °C. © 1995 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Jk Polymers and organics
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Effects of spectral hole burning, carrier heating, and carrier transport on the small‐signal modulation response of quantum well lasers

Chin‐Yi Tsai, Chin‐Yao Tsai, Yu‐Hwa Lo, and Robert M. Spencer

Appl. Phys. Lett. 67, 3084 (1995); http://dx.doi.org/10.1063/1.114872 (3 pages) | Cited 3 times

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We present an analysis of the high‐speed characteristics of quantum well lasers by simultaneously considering the effects of spectral hole burning, carrier heating, and carrier transport. An exact form of the small‐signal modulation response is obtained. The effects of carrier dephasing time in spectral hole burning, energy relaxation time in carrier heating, and diffusion‐capture‐escape times in carrier transport on the modulation response of quantum well lasers are theoretically investigated. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Critical mechanical behavior in the fluid/solid transition of suspensions

R. Esquivel‐Sirvent, D. H. Green, and S. S. Yun

Appl. Phys. Lett. 67, 3087 (1995); http://dx.doi.org/10.1063/1.114873 (3 pages) | Cited 5 times

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Velocity and attenuation measurements of compressional waves at 3 and 5 MHz, as a function of solid volume concentration, are reported for different suspensions. The suspensions were made of 1 μm size particles of kaolinite or glass beads in water or light oil. At a volume concentration of 40%, a sharp peak in attenuation accompanied by a change in velocity is observed. The volume concentration at which this peak occurs is independent of frequency and particle geometry. The observed critical change in attenuation around 40% is consistent with an excess attenuation induced by the fluid‐shearing processes between neighboring particles, and corresponds to the jamming point concentration predicted by particle packing simulations. © 1995 American Institute of Physics.
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62.10.+s Mechanical properties of liquids
64.70.D- Solid-liquid transitions

Acoustic surface shape resonances of circularly symmetric defects on solid surfaces

A. V. Shchegrov and A. A. Maradudin

Appl. Phys. Lett. 67, 3090 (1995); http://dx.doi.org/10.1063/1.114874 (3 pages) | Cited 5 times

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We present a formally exact Green’s tensor approach to the calculation of the frequencies of elastic vibrations localized in the vicinity of a circularly symmetric protuberance or indentation on an otherwise planar, stress‐free surface of a semi‐infinite, isotropic elastic medium–acoustic surface shape resonances. The method is illustrated by applying it to the determination of the frequencies of several of the lowest frequency acoustic surface shape resonances associated with protuberances or indentations of several different forms. © 1995 American Institute of Physics.
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43.35.Pt Surface waves in solids and liquids
68.35.Gy Mechanical properties; surface strains
68.35.Ja Surface and interface dynamics and vibrations

Dynamic behavior of periodic piezoceramic‐polymer composite plates

Xuecang Geng and Q. M. Zhang

Appl. Phys. Lett. 67, 3093 (1995); http://dx.doi.org/10.1063/1.114875 (3 pages) | Cited 6 times

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The dynamic behaviors of periodic piezoceramic‐polymer composite plates, especially the effect of the finite thickness on the strain distributions and resonant modes, are studied theoretically. It is found that as long as fL1<ft1, where fL1 and ft1are the thickness and first piezoelectric active stop band‐edge mode frequencies, there exists a frequency f1 near fL1at which the polymer and ceramic vibrate in phase with equal amplitude in the x3 direction. The effect of the thickness of a composite plate is to change the bandwidth in which the two vibrate in unison. It is also found that due to the finite thickness effect a series of piezoelectric active modes at frequencies near and above ft1may be excited. © 1995 American Institute of Physics.
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43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
77.65.-j Piezoelectricity and electromechanical effects
77.84.Lf Composite materials
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Electron‐impact dissociation of molecular nitrogen in atmospheric‐pressure nonthermal plasma reactors

B. M. Penetrante, M. C. Hsiao, B. T. Merritt, G. E. Vogtlin, P. H. Wallman, A. Kuthi, C. P. Burkhart, and J. R. Bayless

Appl. Phys. Lett. 67, 3096 (1995); http://dx.doi.org/10.1063/1.114876 (3 pages) | Cited 18 times

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This letter presents measurements of the specific energy consumption (eV per molecule) for electron‐impact dissociation of N2 (e+N2→e+N+N) in a pulsed corona and an electron beam reactor. Measurements were done using 100 pm of NO in N2. In this mixture the removal of NO is dominated by the reduction reaction N+NO→N2+O. By measuring the specific energy consumption for reduction of NO, these experiments provide a good measure of the specific energy consumption for electron‐impact dissociation of N2. The specific energy consumption using pulsed corona processing is 480 eV per dissociated N2 molecule. For electron beam processing, the specific energy consumption is 80 eV per dissociated N2 molecule. © 1995 American Institute of Physics.
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52.20.Fs Electron collisions
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Mechanisms for polycrystalline silicon defect passivation by hydrogenation in an electron cyclotron resonance plasma

E. S. Cielaszyk, K. H. R. Kirmse, R. A. Stewart, and A. E. Wendt

Appl. Phys. Lett. 67, 3099 (1995); http://dx.doi.org/10.1063/1.114877 (3 pages) | Cited 10 times

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An in‐line mass spectrometer and Langmuir probes have been employed to examine mechanisms of plasma immersion hydrogen passivation of grain boundary defects in polycrystalline silicon thin film transistors. Relative fluxes of H+ and H+2 as well as total ion current density were measured at the substrate location in an electron cyclotron resonance hydrogen discharge. Measurements were made over a range of operating conditions over which passivation rates have been shown to vary dramatically. Data presented show a strong correlation of both H+ flux and ion bombardment energy with good transistor performance obtained at operating pressures below 1 mTorr. This suggests that discharge operating conditions that promote dissociation of H2 to form H and H+ (which may diffuse more rapidly through solid material than H2), as well as increased sheath voltages and therefore ion energy at the substrate, are important to obtaining acceptable process rates. © 1995 American Institute of Physics.
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61.72.Mm Grain and twin boundaries
61.72.uf Ge and Si
61.80.Jh Ion radiation effects

Origin of compositional variations in sputter‐deposited TixW1−x diffusion barrier layers

D. B. Bergstrom, F. Tian, I. Petrov, J. Moser, and J. E. Greene

Appl. Phys. Lett. 67, 3102 (1995); http://dx.doi.org/10.1063/1.114878 (3 pages) | Cited 11 times

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Sputter‐deposited Ti1−xWx diffusion barriers in microelectronic devices have been reported by many groups to be Ti deficient with respect to the target composition. In the present experiments, polycrystalline TixW1−x alloys were grown on oxidized Si(001) substrates at temperatures Ts between 100 and 600 °C by ultrahigh‐vacuum magnetron cosputter deposition from pure W and Ti targets in 5 mTorr (0.65 Pa) Ar and Xe discharges. Films deposited in Ar were found by Rutherford backscattering and Auger electron spectroscopies to be increasingly Ti deficient with increases in the Ti sputtering rate and/or Ts at a constant W sputtering rate. TRIM calculations and Monte Carlo gas‐transport simulations were used, in combination with the experimental results, to show that the Ti loss was due primarily to differential resputtering of the growing film by energetic Ar particles backscattered from the heavier W target. This effect is exacerbated at elevated film growth temperatures by Ti surface segregation in the alloy. The use of Xe, rather than Ar, as the sputtering gas greatly reduces both the flux and the average energy of backscattered particles incident at the substrate such that measurable Ti loss is no longer observed. © 1995 American Institute of Physics.
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81.15.Cd Deposition by sputtering

Controlling opacity and gain coefficients of soft x‐ray transitions by ion dilution

Tsuneyuki Ozaki and Hiroto Kuroda

Appl. Phys. Lett. 67, 3105 (1995); http://dx.doi.org/10.1063/1.114879 (3 pages)

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Experimental and numerical results with He‐like C ions are presented which show that soft x‐ray gain coefficients can be controlled and optimized by changing the composition of the lasing atomic species in a slab target. It is shown that under optically thick conditions, gain coefficients are drastically increased by using composite materials as targets, thus reducing undesirable reabsorption effects. © 1995 American Institute of Physics.
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42.55.Vc X- and γ-ray lasers
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

UV modification of surface pretilt of alignment layers for multidomain liquid crystal displays

A. Lien, R. A. John, M. Angelopoulos, K. W. Lee, H. Takano, K. Tajima, and A. Takenaka

Appl. Phys. Lett. 67, 3108 (1995); http://dx.doi.org/10.1063/1.114849 (3 pages) | Cited 20 times

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Two types of ultraviolet (UV) light induced modification of the surface pretilt of alignment layers are reported. The UV modification allows the liquid crystal (LC) surface pretilt angle of a polyimide film to be selectively altered in a small area. Two device structures for fabricating two‐domain liquid crystal displays based on this selective alteration of the LC surface pretilt angle of polyimides are proposed. Results from 3D simulation show that each pixel splits into two domains for the proposed structures. Experimentally, two‐domain twisted nematic (TN) test panels and thin‐film‐transistor (TFT) addressed two‐domain TN panels were fabricated using this method. The UV modification described in this letter does not require conventional photoresist technology as do other methods of fabricating two domain liquid crystal displays (LCDs). This process is simple as it requires only one polyimide coating and one rubbing step for each substrate. © 1995 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
61.30.-v Liquid crystals

Mechanism of grain refinement in undercooled Cu30Ni70

J. Z. Xiao, K. K. Leung, and H. W. Kui

Appl. Phys. Lett. 67, 3111 (1995); http://dx.doi.org/10.1063/1.114850 (3 pages) | Cited 8 times

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It was found that remelting is the origin of grain refinement in undercooled Cu30Ni70 specimens. It was also demonstrated that composition difference across a dendrite is the cause of remelting. The critical undercooling, ΔT∗ for grain refinement is 145 K for undercooledCu30Ni70. © 1995 American Institute of Physics.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
64.70.D- Solid-liquid transitions

Imprint of sub‐25 nm vias and trenches in polymers

Stephen Y. Chou, Peter R. Krauss, and Preston J. Renstrom

Appl. Phys. Lett. 67, 3114 (1995); http://dx.doi.org/10.1063/1.114851 (3 pages) | Cited 885 times

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A nanoimprint process that presses a mold into a thin thermoplastic polymer film on a substrate to create vias and trenches with a minimum size of 25 nm and a depth of 100 nm in the polymer has been demonstrated. Furthermore, the imprint process has been used as a lithography process to fabricate sub‐25 nm diameter metal dot arrays of a 100 nm period in a lift‐off process. It was found that the nanostructures imprinted in the polymers conform completely with the geometry of the mold. At present, the imprinted size is limited by the size of the mold being used; with a suitable mold, the imprint process should mold sub‐10 nm structures with a high aspect ratio in polymers. The nanoimprint process offers a low cost method for mass producing sub‐25 nm structures and has the potential to become a key nanolithography method for future manufacturing of integrated circuits and integrated optics. © 1995 American Institute of Physics.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Growing diamond films from an organic liquid

Rong‐Fu Xiao

Appl. Phys. Lett. 67, 3117 (1995); http://dx.doi.org/10.1063/1.114852 (3 pages) | Cited 9 times

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A pulsed laser deposition technique has been used to grow diamond films from an organic liquid target in the presence of reactive gases H2O2/O2. The technique is simple and safe to operate and the cost of source material is much lower than that in a chemical vapor deposition. The results provide a strong evidence that hydroxyl ions OH−, together with atomic oxygen can indeed promote diamond growth. © 1995 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition

Laser deposition of diamondlike carbon films at high intensities

F. Qian, R. K. Singh, S. K. Dutta, and P. P. Pronko

Appl. Phys. Lett. 67, 3120 (1995); http://dx.doi.org/10.1063/1.114853 (3 pages) | Cited 35 times

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Unhydrogenated diamondlike carbon (DLC) thin films have been deposited by laser ablation of graphite, using a high power Ti: sapphire solid state laser system. DLC films were deposited onto silicon substrates at room temperature with subpicosecond laser pulses, at peak intensities in the 4×1014–5×1015 W/cm2 range. A variety of techniques, including scanning and transmission electron microscopy (SEM and TEM), Raman spectroscopy, spectroscopic ellipsometry (SE), and electron energy loss spectroscopy (EELS) have been used to analyze the film quality. Smooth, partially transparent films were produced, distinct from the graphite target. Sp3 volume fractions were found to be in the 50%–60% range, with Tauc band gaps ranging from 0.6 to 1.2 eV, depending on laser intensity. Kinetic energies carried by the carbon ions in the laser induced plasma were measured through time‐of‐flight (TOF) spectroscopy. Their most probable kinetic energies were found to be in the 700–1000 eV range, increasing with laser intensity. © 1995 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition

Direct observation of precipitates and self‐organized nanostructures in molecular‐beam epitaxy grown heavily doped GaAs:Si

S. Gwo, S. Miwa, H. Ohno, J.‐F. Fan, and H. Tokumoto

Appl. Phys. Lett. 67, 3123 (1995); http://dx.doi.org/10.1063/1.114854 (3 pages) | Cited 3 times

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We report a cross‐sectional scanning tunneling microscopy investigation of heavily Si doped [001]‐oriented GaAs grown by molecular‐beam epitaxy. At a very high doping level (6×1019 cm−3), Si‐doping induced precipitates are directly observed in XSTM images of the as‐grown epitaxial layers. Most of the precipitates are found to have a characteristic oval shape with the long axis (∼80 Å) along the growth direction. In contrast to the low diffusivity of randomly distributed Si dopants in the moderate doping regime, these precipitates are found to be highly mobile and spontaneously form ‘‘nanowires’’ during crystal growth. © 1995 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
66.30.J- Diffusion of impurities
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Heteroepitaxy of β‐SiC from methyltrichlorosilane and methyltribromosilane on Si(100) without a carbon buffer layer

Th. Kunstmann and S. Vepřek

Appl. Phys. Lett. 67, 3126 (1995); http://dx.doi.org/10.1063/1.114855 (3 pages) | Cited 9 times

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Methyltrichlorosilane and a novel precursor methyltribromosilane have been used for the heteroepitaxial deposition of β‐SiC on Si(100) at a relatively low temperature of 1150–1200 °C without any carbon buffer layer. The low deposition temperature and an improved temperature program during the annealing of the substrate for cleaning and subsequent deposition of the film allowed us to prepare β‐SiC epitaxial films of high structural quality which is documented by the x‐ray diffraction, Raman scattering spectroscopy and scanning electron microscopy. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology

Damage introduction in InGaP by electron cyclotron resonance Ar plasmas

J. W. Lee, S. J. Pearton, C. R. Abernathy, W. S. Hobson, and F. Ren

Appl. Phys. Lett. 67, 3129 (1995); http://dx.doi.org/10.1063/1.114856 (3 pages) | Cited 8 times

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Changes in sheet resistance of n‐ and p‐type InGaP exposed to electron cyclotron resonance Ar plasmas have been used to measure the introduction of ion‐induced damage. p‐type material is much more resistant to change in its conductivity than n‐type InGaP, indicating that electron traps are the predominant entity produced by the ion bombardment. For short (∼1 min) plasma exposures the ion current is more important than ion energy in producing resistance changes. Annealing of damage in both conductivity types occurs with an activation energy of ∼3.4±0.5 eV. © 1995 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
61.80.Jh Ion radiation effects
81.65.-b Surface treatments
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