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4 Dec 1995

Volume 67, Issue 23, pp. 3373-3505

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Compression mechanism of picosecond optical pulse in far infrared waveguide free electron laser

Suxing Hu and Ensheng Fu

Appl. Phys. Lett. 67, 3373 (1995); http://dx.doi.org/10.1063/1.114897 (3 pages)

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We have investigated the compression mechanism of picosecond optical pulses in a far infrared waveguide free electron laser driven by a radio frequency linear accelerator. With a pertinent waveguide gap b and the required original phase velocity of the electron bunch, the longitudinal length of a picosecond optical pulse will be continuously shortened so that the pulse power increases quickly until saturation occurs. In order to continue the compression process, an optimal cavity detuning ΔLc is necessary. © 1995 American Institute of Physics.
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41.60.Cr Free-electron lasers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Blue‐violet electroluminescence and photocurrent spectra from polycrystalline chemical vapor deposited diamond film

C. Manfredotti, F. Wang, P. Polesello, E. Vittone, F. Fizzotti, and A. Scacco

Appl. Phys. Lett. 67, 3376 (1995); http://dx.doi.org/10.1063/1.114898 (3 pages) | Cited 15 times

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We have measured current–voltage characteristic, blue‐violet electroluminescence (EL) and subgap photocurrent spectra of free standing polycrystalline chemical vapor deposited diamond film. The current increases as a power law function of the voltage with an exponent of about 5.5. The EL spectra show a main luminescence band peaked at 3.0 eV, whose intensity increases linearly with the electric current. The photocurrent increases rapidly with the photon energy in the range from 2.0 to 3.5 eV and then tends to saturate. It is found that all these results can be consistently explained in relation to gap states centered at 3.0 eV above the valence band. © 1995 American Institute of Physics.
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73.50.Pz Photoconduction and photovoltaic effects
78.60.Fi Electroluminescence

Si1−xGex/Si asymmetric 2×2 electro‐optical switch of total internal reflection type

Yong Gao, Xiding Liu, Guozheng Li, Enke Liu, Xiangjiu Zhang, Xuekun Lu, Jihuang Hu, and Xun Wang

Appl. Phys. Lett. 67, 3379 (1995); http://dx.doi.org/10.1063/1.114899 (2 pages) | Cited 11 times

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Based on plasma dispersion of Si1−xGex, we have fabricated asymmetric 2×2 switches of total internal reflection type, in which Si1−xGex was grown by molecular beam epitaxy. The optimum intersecting angle is 4°, and the crosstalk is less than −10.6 dB at 76 mA injection current. The insertion loss is 2.8 dB, and the switch time is 0.6 μs. © 1995 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

Polarized electroluminescence from rubbing‐aligned poly(2,5‐dinonyloxy‐1,4‐phenylenevinylene) films

Maki Hamaguchi and Katsumi Yoshino

Appl. Phys. Lett. 67, 3381 (1995); http://dx.doi.org/10.1063/1.114900 (3 pages) | Cited 44 times

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Polarized light emission was observed in conjugated polymer electroluminescent diodes comprising rubbing‐aligned poly(2,5‐dinonyloxy‐1,4‐phenylenevinylene) as the emissive layer. By using 2‐(4‐biphenyly1)‐5‐(4‐tert‐butylphenyl)‐1,3,4‐oxadiazole dispersed in polystyrene as the electron‐transporting/hole‐blocking layer, the electroluminescence efficiency and the dichroic ratio of the electroluminescent light increased, resulting in polarized electroluminescence with a dichroic ratio of 4.0. © 1995 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
85.60.Jb Light-emitting devices

Laser‐induced dark traces in doped LiNbO3 crystals

Jiang Li, Xiaojun Chen, Bin Wu, Bing Li, and Shihong Pan

Appl. Phys. Lett. 67, 3384 (1995); http://dx.doi.org/10.1063/1.114901 (3 pages) | Cited 4 times

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Laser‐induced dark traces in doped LiNbO3 crystals are studied with the 1064 nm fundamental radiation and the 532 nm second harmonic radiation of the Nd:YAG laser operating in a pulse mode. The results show that the dark traces are induced only by the 532 nm radiation. The linear relationship between the transmission loss and the 532 nm power density indicates that dark traces are not due to two‐photon absorption. The recovery rates of the absorption in LiNbO3 with different wavelength probe laser are measured and show that laser‐induced dark traces accompany more than one defect appearing in LiNbO3, and disappear quicker at higher temperature. © 1995 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Excitonic recombination in GaN grown by molecular beam epitaxy

M. Smith, G. D. Chen, J. Z. Li, J. Y. Lin, H. X. Jiang, A. Salvador, W. K. Kim, O. Aktas, A. Botchkarev, and H. Morkoç

Appl. Phys. Lett. 67, 3387 (1995); http://dx.doi.org/10.1063/1.114902 (3 pages) | Cited 53 times

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Time‐resolved photoluminescence has been employed to probe the free‐excitonic transitions and their dynamic processes in GaN grown by molecular beam epitaxy (MBE). The exciton photoluminescence spectral line shape, quantum yield, and recombination lifetimes have been measured at different excitation intensities and temperatures, from which the binding energy of an exciton, the energy band gap, and the free‐exciton radiative recombination lifetimes of GaN grown by MBE have been obtained. Our results have demonstrated the superior crystalline quality as well as ultrahigh purity of the investigated sample, implying a new major breakthrough in MBE growth technologies for GaN. © 1995 American Institute of Physics.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Precision Bragg reflectors obtained by molecular beam epitaxy under in situ tunable dynamic reflectometry control

V. Bardinal, R. Legros, and C. Fontaine

Appl. Phys. Lett. 67, 3390 (1995); http://dx.doi.org/10.1063/1.114903 (3 pages) | Cited 9 times

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Highly accurate layer thicknesses are required for multilayers involved in photonic devices, such as Bragg reflectors. In this letter, we demonstrate that precise, real‐time monitoring of molecular beam epitaxy growing layers can be achieved by near‐normal incidence dynamic reflectometry with a tunable sapphire–titanium laser used as a source. The advantage of this new technique lies in the possibility of synchronizing the material changes and the reflectivity extrema by selecting adequate analysis wavelengths. This technique is shown to provide 885 nm GaAs–AlAs Bragg reflectors with a layer thickness accuracy in excess of 1%. © 1995 American Institute of Physics.
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42.79.Bh Lenses, prisms and mirrors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors

UV‐induced transmission frustration in optical fibers

M. B. Danailov and P. Apai

Appl. Phys. Lett. 67, 3393 (1995); http://dx.doi.org/10.1063/1.114904 (3 pages) | Cited 1 time

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In this letter we report experimental observations of transient UV‐induced frustration of the visible light transmission through Ge‐doped single mode fibers. Fiber side exposure to single nanosecond UV pulses at 266 and 248 nm is found to cause an abrupt decrease in transmission immediately following the pulse and a transmission recovery in microsecond time scale. Transmission changes were monitored at several visible wavelengths and for different types of Ge‐doped single mode fibers. The reported effect occurs independently of the growth and saturation of the permanent UV‐induced absorption reported by other authors. © 1995 American Institute of Physics.
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42.81.-i Fiber optics
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
71.55.Jv Disordered structures; amorphous and glassy solids

1 pm spectrally narrowed ArF excimer laser injection locked by fourth harmonic seed source of 773.6 nm Ti:sapphire laser

T. Kasamatsu, M. Tsunekane, H. Sekita, Y. Morishige, and S. Kishida

Appl. Phys. Lett. 67, 3396 (1995); http://dx.doi.org/10.1063/1.114905 (3 pages)

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We have achieved spectrum narrowing to 1 pm in a high‐power ArF excimer laser injection locked by an all solid‐state fourth harmonic (193.4 nm) seed source of 773.6 nm Ti:sapphire laser radiation. Superior laser properties such as sufficient output energy (90 mJ/pulse, 50 pps), locking efficiency exceeding 90%, wavelength drift less than 0.4 pm, and spectrum bandwidth fluctuation less than 0.2 pm were obtained, which meet the requirements for 1 Gbit dynamic random access memory microlithography. © 1995 American Institute of Physics.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.-v Laser optical systems: design and operation
85.40.Hp Lithography, masks and pattern transfer

Optimized dipole antennas on photonic band gap crystals

S. D. Cheng, R. Biswas, E. Ozbay, S. McCalmont, G. Tuttle, and K.‐M. Ho

Appl. Phys. Lett. 67, 3399 (1995); http://dx.doi.org/10.1063/1.114906 (3 pages) | Cited 33 times

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Photonic band gap crystals have been used as a perfectly reflecting substrate for planar dipole antennas in the 12–15 GHz regime. The position, orientation, and driving frequency of the dipole antenna on the photonic band gap crystal surface, have been optimized for antenna performance and directionality. Virtually no radiated power is lost to the photonic crystal resulting in gains and radiation efficiencies larger than antennas on other conventional dielectric substrates. © 1995 American Institute of Physics.
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84.40.Ba Antennas: theory, components and accessories

Spectroscopic ellipsometry determination of the refractive index of strained Si1−xGex layers in the near‐infrared wavelength range (0.9–1.7 μm)

J. C. G. de Sande, A. Rodríguez, and T. Rodríguez

Appl. Phys. Lett. 67, 3402 (1995); http://dx.doi.org/10.1063/1.114907 (3 pages) | Cited 10 times

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The refractive index of fully strained Si1−xGex layers, with compositions x=0.20, 0.25, 0.30, and 0.33, has been measured using spectroscopic ellipsometry as a function of the wavelength in the 0.9–1.7 μm range. The dependence of the refractive index on the wavelength, for these compositions, is similar to that of crystalline Si. Its value for any wavelength is lower than that of relaxed Si1−xGex of the same composition. The experimental values of the refractive index of the fully strained Si1−xGex were fitted to the expression nSiGe(x,λ)=nSi(λ)+(1.16–0.26 λ)x2. This expression is applicable for wavelengths from 0.9 to 1.7 μm and compositions x≤0.33. © 1995 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Li Other semiconductors

Polarization switching in AlGaAs/GaAs distributed feedback lasers between the stable single longitudinal modes

Toshihiko Ouchi, Masao Majima, Sotomitsu Ikeda, Takeo Ono, Mamoru Uchida, and Yuichi Handa

Appl. Phys. Lett. 67, 3405 (1995); http://dx.doi.org/10.1063/1.114908 (3 pages) | Cited 3 times

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TE/TM polarization mode switching is demonstrated in an AlGaAs/GaAs distributed feedback laser diode. The device has two current injecting electrodes and as an active layer a conventional multiquantum well (MQW) structure. A small amplitude modulation of the current into one of the electrodes switches the polarization mode. Each mode corresponds to a stable single longitudinal mode of a distributed feedback laser. The lasing wavelength can be tuned continuously, without mode hopping, over 0.7 nm by controlling the total injection current. This new kind of polarization switching is promising for optical switching systems and optical frequency division multiplexing devices. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Far field characterization of diffracting circular apertures

Christian Obermüller and Khaled Karrai

Appl. Phys. Lett. 67, 3408 (1995); http://dx.doi.org/10.1063/1.115262 (3 pages) | Cited 50 times

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The far field angular intensity distribution I(θ) of the λ=633 nm radiation transmitted through diffracting circular apertures is measured for diameters ranging between 60 and 500 nm. The circular apertures are located at the apex of aluminum coated tapered optical fiber tips. I(θ) depends sensitively on the aperture diameters down to λ/6. This property is used to determine the optical aperture size of metal coated tapered optical fiber tips used for near field scanning optical microscopy. © 1995 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes

Electrical properties’ maxima in thin films of the lead zirconate–lead titanate solid solution system

H. D. Chen, K. R. Udayakumar, C. J. Gaskey, and L. E. Cross

Appl. Phys. Lett. 67, 3411 (1995); http://dx.doi.org/10.1063/1.115263 (3 pages) | Cited 96 times

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The piezoelectric strain coefficients have been measured as a function of composition for films in the PbZrO3–PbTiO3 (PZT) solid solution system, using a double‐beam laser interferometry technique. This compositional dependence of piezoelectric, and the associated dielectric and ferroelectric properties for films 1 μm in thickness with varying Zr/Ti ratio, deposited on platinized silicon substrates using a modified sol‐gel route, corresponds to data reported for undoped PZT ceramics with respect to the effective morphotropic phase boundary composition. Films with composition near the morphotropic phase boundary, Pb(Zr0.52Ti0.48)O3, show enhanced values of the longitudinal piezoelectric coefficient, 194 pC/N; dielectric permittivity, 1310; and remanent polarization, 36 μC/cm2. © 1995 American Institute of Physics.
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77.55.-g Dielectric thin films
77.65.-j Piezoelectricity and electromechanical effects
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Electrochemically induced surface chemistry and negative electron affinity on diamond (100)

Pehr E. Pehrsson, J. P. Long, Michael J. Marchywka, and James E. Butler

Appl. Phys. Lett. 67, 3414 (1995); http://dx.doi.org/10.1063/1.115264 (3 pages) | Cited 15 times

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Hydrogenated single crystal (100) diamond surfaces subjected to an electrochemical (EC) treatment are selectively oxidized at room temperature. Part of the surface remains hydrogenated, except for a narrow transition region between the oxidized and hydrogenated regions. Ultraviolet photoelectron spectroscopy indicates that the transition region has negative electron affinity (NEA), as do the surfaces of hydrogenated crystals. The oxidized and hydrogenated parts of the EC‐treated surfaces do not have NEA. A possible explanation is that contaminants eliminate NEA in the hydrogenated parts of the EC treated surfaces, but the transition region remains uncontaminated. None of the oxidized surfaces exhibit NEA. © 1995 American Institute of Physics.
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73.20.-r Electron states at surfaces and interfaces
82.45.-h Electrochemistry and electrophoresis

The phase transition and transport properties of Sr0.56C60O1.5

Q. M. Zhang, Y. N. Huang, H. M. Shen, F. Yan, G. Gu, Y. W. Du, and Y. N. Wang

Appl. Phys. Lett. 67, 3417 (1995); http://dx.doi.org/10.1063/1.115265 (3 pages) | Cited 1 time

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X‐ray diffraction and dielectric measurement have been applied to investigate the phase transition and transport properties of Sr0.56C60O1.5 which is obtained by the reaction of SrCl2 with C60 anion aquatic solution. The new compound has a similar structure, but different transport properties as compared with metallic Sr‐doped C60. X‐ray diffraction shows that a first‐order phase transition around 100 °C is related to the rearrangement of Sr2+ in the interstitial sites of the C60 lattice. The step change of ac conductivity near 100 °C is also attributed to the hopping of Sr2+ between interstitial sites. The ionic conductivity indicates the possibility of synthesizing superionic conductors based on C60 and its derivatives. © 1995 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
66.30.H- Self-diffusion and ionic conduction in nonmetals

Photodegradation of poly(p ‐ phenylenevinylene) by laser light at the peak wavelength of electroluminescence

Taehyoung Zyung and Jang‐Joo Kim

Appl. Phys. Lett. 67, 3420 (1995); http://dx.doi.org/10.1063/1.115266 (3 pages) | Cited 55 times

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We report the photodegradation of poly(p‐phenylenevinylene) polymer when the film was irradiated with laser light at a wavelength corresponding to the peak wavelength of electroluminescence. Degradation in photoluminescent properties was significant in an air environment but not under vacuum. This indicates that the oxygen in air aids photodegradation and this hypothesis was confirmed by optical spectroscopy. This degradation may be associated with long‐term stability of the electroluminescence device. © 1995 American Institute of Physics.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds

Green upconversion fluorescence in Er3+‐doped Ta2O5 heated gel

Kazuo Kojima, Shiro Yoshida, Haruki Shiraishi, and Akira Maegawa

Appl. Phys. Lett. 67, 3423 (1995); http://dx.doi.org/10.1063/1.115267 (3 pages) | Cited 16 times

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Er3+‐doped Ta2O5 bulk gels were prepared via the sol‐gel process and characterized. In this heated gel, green upconversion fluorescence was observed around 545 nm under 805 nm excitation (4I15/2→4I9/2). Electron spin resonance (ESR) spectra for Er3+ in the gels were also determined at 4.2 K. Remarkable features observed in upconversion fluorescence and in ESR were discussed on the basis of dispersion of Er3+ ions in the Ta2O5 gel. © 1995 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Structural characterization of aluminum films deposited on sputtered‐titanium nitride/silicon substrate by metalorganic chemical vapor deposition from dimethylethylamine alane

Xiaodong Li, Byoung‐Youp Kim, and Shi‐Woo Rhee

Appl. Phys. Lett. 67, 3426 (1995); http://dx.doi.org/10.1063/1.115268 (3 pages) | Cited 8 times

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Al films deposited on sputtered‐TiN/Si substrate by metalorganic chemical vapor deposition (MOCVD) from dimethylethylamine alane (DMEAA) were characterized using x‐ray diffraction (XRD), Auger electron spectroscopy (AES), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The TiN film sputtered on the Si has a preferred orientation along the growth direction with the 〈111〉 of the film parallel to the Si〈111〉. Sputtering of the TiN film on the Si induced strains at the interface. The TiN/Si interface is flat while the Al/TiN interface is rough. There exist many dislocations at the Al/TiN interface. The Al2O3 phase was formed at the Al/TiN interface during the early stages of Al deposition. In the Al grains, there exist many tangled dislocations and a few Al2O3 particles. With increasing deposition time, the Al film surface roughness increases. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Roughness in Nb/Cu multilayers determined by x‐ray diffraction and atomic force microscopy

K. Temst, M. J. Van Bael, B. Wuyts, C. Van Haesendonck, Y. Bruynseraede, D. G. de Groot, N. Koeman, and R. Griessen

Appl. Phys. Lett. 67, 3429 (1995); http://dx.doi.org/10.1063/1.115269 (3 pages) | Cited 13 times

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Nb/Cu multilayers grown by molecular beam epitaxy have been studied by x‐ray diffraction and atomic force microscopy. X‐ray diffraction provides the average interface roughness while atomic force microscopy shows the roughness and topology of the upper surface. Comparison of both methods shows that high‐angle diffraction averages over a lateral length which is in good agreement with the typical grain size. © 1995 American Institute of Physics.
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61.05.C- X-ray diffraction and scattering
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.55.-a Thin film structure and morphology

Optical investigation of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells

W. Z. Shen, S. C. Shen, W. G. Tang, Y. Zhao, and A. Z. Li

Appl. Phys. Lett. 67, 3432 (1995); http://dx.doi.org/10.1063/1.115270 (3 pages) | Cited 8 times

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See Also: Erratum

Show Abstract
Photoluminescence and absorption measurements were carried out on quaternary Ga0.75In0.25As0.04Sb0.96 /Al0.22Ga0.78As0.02Sb0.93 strained multiple quantum well (MQW) structure grown by molecular‐beam epitaxy to investigate its band offsets and subband behavior. Strong luminescence and well‐resolved excitonic absorption peaks are observed even at room temperature, which is indicative of good quality of our quaternary sample. By fitting the experimental results with the theoretical calculations, we find that the light holes are in Ga0.75In0.25As0.04Sb0.98 well regions (type I MQW) and the conduction‐band offset ratio Qc=0.66±0.01. The transition from type I to type II for light holes may occur for the composition of x≤0.70 in GaxIn1−xAs0.04Sb0.96/ Al0.22Ga0.78As0.02Sb0.98 system. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

High field effects in high resistivity silicon carbide in lateral configurations

T. S. Sudarshan, G. Gradinaru, G. Korony, W. Mitchel, and R. H. Hopkins

Appl. Phys. Lett. 67, 3435 (1995); http://dx.doi.org/10.1063/1.115271 (3 pages) | Cited 5 times

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Results of the high field performance of single‐crystal bulk 6H–SiC of relatively high resistivity (∼500 Ω cm) are reported. Prebreakdown and breakdown phenomena of SiC at high fields are studied using lateral device geometries, particularly suitable for photoconductive power switches and other high voltage power devices. The influence of the electrode configuration, gap length, sample geometry, and contact technology on the high field responses of SiC is discussed. Ohmic response and relatively large hold‐off fields (≳80 kV/cm) are reported for this material in vacuum and SF6 gas. © 1995 American Institute of Physics.
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72.20.Ht High-field and nonlinear effects
72.80.Jc Other crystalline inorganic semiconductors
73.40.Sx Metal-semiconductor-metal structures

Carrier lifetimes in dielectric cap disordered GaAs/AlGaAs multiple quantum well with SiN capping layers

W. J. Choi, S. Lee, Y. Kim, D. Woo, S. K. Kim, S. H. Kim, J. I. Lee, K. N. Kang, J. H. Chu, S. K. Yu, J. C. Seo, D. Kim, and K. Cho

Appl. Phys. Lett. 67, 3438 (1995); http://dx.doi.org/10.1063/1.115272 (3 pages) | Cited 8 times

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Time resolved photoluminescence (PL) characteristics of a SiN cap disordered GaAs/AlGaAs multiple quantum well (MQW) structure exhibit a decrease in carrier lifetime in conjunction with an increase in quantum well disordering (QWD) as the SiN capping layer thickness is increased. The decrease in carrier lifetime is attributed to enhanced carrier trapping due to the defects introduced during dielectric cap quantum well disordering and the relaxation of the momentum conservation during radiative recombination by QWD. Potential applications of these effects on high speed optical devices such as laser diodes (LD’s) and optical modulators are discussed. © 1995 American Institute of Physics.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.47.-p Spectroscopy of solid state dynamics

Measurement of the refractive index of GaInAs/InP quantum wells by a grating coupling technique

El Mostafa Skouri, Patrick Martin, Laurent Chusseau, Claude Alibert, Claudio Coriasso, Domenico Campi, and Carmelo Cacciatore

Appl. Phys. Lett. 67, 3441 (1995); http://dx.doi.org/10.1063/1.115273 (3 pages) | Cited 10 times

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Effective indices of modes propagating in multiple GaInAs wells on InP barriers (MQW) waveguides are accurately measured in the 1.4–1.75 μm wavelength range using the grating coupling technique. Quantum size effects cause a selective polarization absorption and high birefringence, strongly depending on wavelength. The temperature dependence of refractive index and absorption originating from the temperature‐dependent band gap is also observed. In the transparency region the refractive indices of GaInAs wells in InP barriers are deduced for two well widths using a multilayer slab waveguide model and an exciton model based on Lorentzian oscillator. © 1995 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
78.66.Fd III-V semiconductors

Transport properties of two‐dimensional electron gas in AlGaAs/GaAs selectively doped heterojunctions with embedded InAs quantum dots

H. Sakaki, G. Yusa, T. Someya, Y. Ohno, T. Noda, H. Akiyama, Y. Kadoya, and H. Noge

Appl. Phys. Lett. 67, 3444 (1995); http://dx.doi.org/10.1063/1.115274 (3 pages) | Cited 56 times

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Transport properties of two‐dimensional electron gas (2DEG) are studied in selectively doped GaAs/n‐AlGaAs heterojunctions, in which nanometer‐scale InAs dots are embedded in the vicinity of the GaAs channel. When the distance Wd between the InAs dot layer and the channel is reduced from 80 to 15 nm, the mobility μ of electrons at 77 K decreases drastically from 1.1×105 to 1.1 ×103 cm2/V s, while the carrier concentration increases from 1.1×1011 to 5.3×1011 cm−2. Such a reduction of mobility is found only when the average thickness of InAs layer is above the onset level (∼1.5 monolayer) for the dot formation. Origins of these changes in μ and Ns are discussed in connection with dot‐induced modulations of the electronic potential V(r) in the channel. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
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