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Applied Physics Letters / Volume 67 / Issue 23

Appl. Phys. Lett. 67, 3447 (1995); http://dx.doi.org/10.1063/1.115275 (3 pages)

Visible photoluminescence from He‐implanted silicon

D. Bisero1, F. Corni1, C. Nobili1, R. Tonini1, G. Ottaviani1, C. Mazzoleni2, and L. Pavesi2

1I.N.F.M. and Dipartimento di Fisica, Università di Modena, Via Campi 213/A, I‐41100 Modena, Italy
2I.N.F.M. and Dipartimento di Fisica, Università di Trento, I‐38050 Povo, Trento, Italy

(Received 16 June 1995; accepted 23 September 1995)

Visible photoluminescence has been observed at cryogenic temperatures from crystalline Si bombarded with He and exposed to H either as plasma or gas in the 250–450 °C temperature range. The experimental results are consistent with the formation of Si nanoparticles produced by He segregation, which is responsible for exciton localization, and H passivation of the nonradiative recombination centers. © 1995 American Institute of Physics.

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KEYWORDS and PACS

Keywords

DEFECT STATES, HELIUM ADDITIONS, HYDROGENATION, ION BEAMS, MICROSTRUCTURE, NANOSTRUCTURES, PASSIVATION, PHOTOLUMINESCENCE, RECOMBINATION, SILICON

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.115275

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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