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11 Dec 1995

Volume 67, Issue 24, pp. 3523-3656

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Free‐space electro‐optic sampling of terahertz beams

Q. Wu and X.‐C. Zhang

Appl. Phys. Lett. 67, 3523 (1995); http://dx.doi.org/10.1063/1.114909 (3 pages) | Cited 193 times

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Free‐space electro‐optic sampling is an alternative method for the characterization of freely propagating terahertz beams with subpicosecond temporal resolution. In contrast to resonant photoconductive dipole antennas, free‐space electro‐optic sampling via the linear electro‐optic effect (Pockels effect) offers a flat frequency response over an ultrawide bandwidth and the potential for a simple cross‐correlation signal of the terahertz and optical pulses. © 1995 American Institute of Physics.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.20.Jq Electro-optical effects
84.40.-x Radiowave and microwave (including millimeter wave) technology

Dependence of mode size and temporal response on the mirror contrast ratio in microcavity lasers

H. Deng, D. G. Deppe, and J. Shin

Appl. Phys. Lett. 67, 3526 (1995); http://dx.doi.org/10.1063/1.114910 (3 pages) | Cited 1 time

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Microcavity lasers with differing mirror designs are used to study the influence of the index contrast ratio on the mode size and temporal response. The experimental results demonstrate the advantages of high contrast Bragg reflectors for reducing the mode area while simultaneously increasing the laser temporal response. We suggest that the far‐field angle is preferable to an effective cavity length as a characterization parameter, since the far‐field angle is directly measurable and yields the photon lifetime. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Comparison of one‐photon and two‐photon effects in the photosensitivity of germanium‐doped silica optical fibers exposed to intense ArF excimer laser pulses

J. Albert, B. Malo, K. O. Hill, F. Bilodeau, D. C. Johnson, and S. Thériault

Appl. Phys. Lett. 67, 3529 (1995); http://dx.doi.org/10.1063/1.114911 (3 pages) | Cited 41 times

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The growth rate of fiber Bragg gratings written using 193 nm light from an ArF excimer laser is linearly proportional to the laser pulse energy density for fibers with high germanium doping but proportional to the square of the pulse energy density for standard telecommunications fibers with low germanium concentration. The two‐photon process in standard fibers yields refractive index increases that saturate around 10−3, an order of magnitude improvement over previous results in this type of fiber without sensitization treatment. The two types of photoinduced refractive index gratings have comparable thermal stability and preserve about 50% of their initial magnitude after 30 min at 600 °C. © 1995 American Institute of Physics.
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42.70.Ce Glasses, quartz
42.81.-i Fiber optics

All-optical programmable AND gate implementation in a germanium-doped silica planar waveguide

P. M. Ranon, I. Dajani, J. J. Kester, and T. G. Alley

Appl. Phys. Lett. 67, 3532 (1995); http://dx.doi.org/10.1063/1.115564 (3 pages) | Cited 3 times

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We report the results of an all-optical programmable AND logic gate. This gate consists of a germanium-doped silica planar waveguide, a laser, and the means of coupling two fundamental frequency beams into different guiding modes of the waveguide along with a second harmonic beam coupled into one guiding mode. These waves interfere in the film generating a set of semipermanent second-order susceptibility gratings which give rise to the waveguide, the film-generated second harmonic light wave made to behave as an output of a logic AND gate. The fundamental and second harmonic light were sent into the waveguide during the programming sequence, but only the fundamental light was injected to probe the logic gate to produce an output. The measured signal-to-noise ratio was 17 dB.© American Institute of Physics
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Critical assessment of thermal models for laser sputtering at high fluences

Antonio Miotello and Roger Kelly

Appl. Phys. Lett. 67, 3535 (1995); http://dx.doi.org/10.1063/1.114912 (3 pages) | Cited 124 times

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A critical assessment of thermal models for laser sputtering at high fluences is presented. It is argued that the model explaining such sputtering by involving a subsurface superheating effect misinterprets the meaning of ‘‘vaporization’’ and ‘‘boiling’’. As a result inappropriate boundary conditions are used, including those for both the surface temperature and for the surface temperature gradient. On the contrary, it is shown that explosive boiling (also termed phase explosion) in the sense pioneered by Martynyuk and by Fucke and Seydel remains the only thermal mechanism able to explain laser sputtering at high fluences. © 1995 American Institute of Physics.
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79.20.Ds Laser-beam impact phenomena
81.15.Fg Pulsed laser ablation deposition

Optical bistability in two‐dimensional nonlinear optical superlattice with two incident waves

Xiang‐fei Chen, Ya‐lin Lu, Zhen‐lin Wang, and Nai‐ben Ming

Appl. Phys. Lett. 67, 3538 (1995); http://dx.doi.org/10.1063/1.114913 (3 pages) | Cited 2 times

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With two coherent waves incident to a two‐dimensional (2D) nonlinear optical superlattice containing Kerr form dielectric nonlinearity, the optical bistability related to transition between a forbidden transmission state and an allowed transmission state can occur through the index‐modulation mechanism. This kind of bistability is difficult to obtain in the case of only one incident wave. The power cost for the bistability might be very low. © 1995 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.66.-w Optical properties of specific thin films

Surface acoustic wave on the (112) cut [110] direction of gallium arsenide

Rimantas Miškinis and Emilis Urba

Appl. Phys. Lett. 67, 3541 (1995); http://dx.doi.org/10.1063/1.114914 (2 pages)

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The properties of an acoustoelectrically active surface acoustic wave (SAW) propagated on the (112) cut [110] direction of gallium arsenide are studied theoretically. The leaky nature of this SAW (LSAW) which has three displacement components of comparable magnitude is demonstrated. The low attenuation (4.94×10−5 dB per wavelength) of the LSAW is obtained. The values of the velocity and the electromechanical coupling coefficient of the LSAW, equal to 3047.4 m/s and 9.3×10−4, respectively, are acquired and agree with the results of experiments carried out previously. © 1995 American Institute of Physics.
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43.35.Pt Surface waves in solids and liquids
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics

High repetition rate far‐infrared p‐type germanium hot hole lasers

E. Bründermann, H. P. Röser, W. Heiss, E. Gornik, and E. E. Haller

Appl. Phys. Lett. 67, 3543 (1995); http://dx.doi.org/10.1063/1.114915 (3 pages) | Cited 9 times

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We have studied the influence of high repetition rates, up to 300 Hz, on four pulsed p‐type germanium lasers. The maximum electric input power which terminates laser action via heating is a characteristic value for each crystal. We show magnetic field sweeps and introduce a diagram which connects the dynamical behavior of light and heavy holes to optical phonons and impurity states. We find that temperature is an essential key for the understanding of the laser action. High repetition rates or continuous wave operation may be achieved with proper design of the crystal and its cooling environment. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Role of radiative and nonradiative processes on the temperature sensitivity of strained and unstrained 1.5 μm InGaAs(P) quantum well lasers

J. Braithwaite, M. Silver, V. A. Wilkinson, E. P. O’Reilly, and A. R. Adams

Appl. Phys. Lett. 67, 3546 (1995); http://dx.doi.org/10.1063/1.114916 (3 pages) | Cited 11 times

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By measuring the spontaneous emission from strained and unstrained 1.5 μm InGaAs quantum well lasers as a function of temperature we deduce the temperature dependence of the radiative current density at threshold corresponds to a characteristic temperature T0≊300 K, close to that expected from theory, whereas T0 of the threshold current is around 60 K. We conclude from our analysis that the large temperature dependence of long wavelength lasers is due to Auger recombination. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

High efficiency top surface‐emitting lasers fabricated by four implantation using tungsten wire as mask

Ying Liu, Xiaobo Zhang, Xiuying Jiang, Suping Liu, Xuemei Li, Guotong Du, Dingsan Gao, Shiming Lin, Xuejun Kang, Honghai Gao, Junhua Gao, and Hongjie Wang

Appl. Phys. Lett. 67, 3549 (1995); http://dx.doi.org/10.1063/1.114917 (2 pages)

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We report the results of a high efficiency room temperature continuous wave (cw) vertical‐cavity surface‐emitting laser. The structure is obtained by four deep H+ implantation using tungsten wires as the mask. The fabrication process is the simplest ever reported in vertical‐cavity surface‐emitting laser fabrication. The largest differential quantum efficiency of 65% and maximum cw light output power over 4 mW have been achieved for the 15×15 μm2 device. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Orientational relationship between cubic boron nitride and hexagonal boron nitride in a thin film synthesized by ion plating

Wei‐Lie Zhou, Yuichi Ikuhara, and Tetsuya Suzuki

Appl. Phys. Lett. 67, 3551 (1995); http://dx.doi.org/10.1063/1.114918 (3 pages) | Cited 17 times

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Cubic boron nitride (c‐BN) thin films synthesized by the ion‐plating method were examined by high‐resolution electron microscopy. It was found that the {0002} planes of hexagonal boron nitride (h‐BN) at the boundaries of c‐BN grains preferred to nucleate almost parallel to {111} planes of c‐BN. Cross‐sectional observation in the initial stage of growth showed that the c‐BN can grow on top of the prismatic planes and the {0001} basal planes of h‐BN, keeping the parallelism of the (111)c‐BN to (0001)h‐BN. A few degrees deviation (∼4°) between h‐BN {0002} planes and c‐BN {111} planes was frequently found in the film. The nucleation mechanism of c‐BN was discussed analogous to that of diamond on graphite. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Temperature dependence of thermophysical properties of GaAs/AlAs periodic structure

X. Y. Yu, G. Chen, A. Verma, and J. S. Smith

Appl. Phys. Lett. 67, 3554 (1995); http://dx.doi.org/10.1063/1.114919 (3 pages) | Cited 63 times

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This work investigates the temperature dependence of GaAs/AlAs thin‐film structures. Based on an ac calorimetric method, the thermal diffusivity of a 700 Å/700 Å GaAs/AlAs periodic structure is measured from 190 to 450 K. Thermal conductivity of the structure is derived from the experiment. The results demonstrate that the thermal conductivity/diffusivity of the structure are lower than its corresponding bulk values. The temperature dependence of its thermophysical properties is weaker than that of typical bulk III–V materials. Interface scattering is believed as the major cause of the observed reduction in thermal conductivity. © 1995 American Institute of Physics.
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66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
68.35.Md Surface thermodynamics, surface energies

Selective area deposition of diamond thin films on patterns of porous silicon by hot‐filament chemical vapor deposition

S. Mirzakuchaki, M. Hajsaid, H. Golestanian, R. Roychoudhury, E. J. Charlson, E. M. Charlson, and T. Stacy

Appl. Phys. Lett. 67, 3557 (1995); http://dx.doi.org/10.1063/1.114920 (3 pages) | Cited 5 times

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Diamond thin films, 5 μm in thickness, were grown selectively on patterns of porous silicon by hot‐filament chemical vapor deposition (HFCVD). Monocrystalline p‐type silicon substrates, with (100) orientation and resistivity 5–15 Ω cm, were patterned by conventional photolithography to provide a photoresist mask for selective anodization. The polycrystalline diamond films thus formed were studied by scanning electron microscopy, x‐ray diffraction, and Raman spectroscopy which revealed high selectivity and high quality diamond films. This process proved to be simple and yet effective in developing patterns of diamond film in different shapes and sizes. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Change in sign of the photocurrent in a coherent asymmetric superlattice

Michael I. Sumetskii and Harold U. Baranger

Appl. Phys. Lett. 67, 3560 (1995); http://dx.doi.org/10.1063/1.114921 (3 pages) | Cited 1 time

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We study the photocurrent induced in an asymmetric superlattice as a function of the frequency of applied radiation. In order to investigate the principal features, we consider the simplest finite‐period structure: one containing an asymmetric unit formed of two narrow quantum wells. It is found that the main features of the photocurrent‐frequency curve are insensitive to the number of periods. Considering a single‐unit structure, we find simple equations for the photocurrent reversal points. The oscillations in sign of the photocurrent are shown to result from quantum interference of the electron waves reflected at the interfaces in the structure. Using our model, we approximate an experimental structure and explain the observed photocurrent reversal. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Pz Photoconduction and photovoltaic effects

Photon‐assisted cryoetching of III–V binary compounds by Cl2 at 193 nm

J.‐L. Lin, M. B. Freiler, M. Levy, R. M. Osgood, D. Collins, and T. C. McGill

Appl. Phys. Lett. 67, 3563 (1995); http://dx.doi.org/10.1063/1.114922 (3 pages) | Cited 3 times

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We compare low‐temperature, excimer‐laser‐induced etching of GaAs, GaSb, InAs, and InSb surfaces covered with 1–2 monolayers of condensed Cl2. The etch properties and a relative etch rate of GaAs∼GaSb<InAs<InSb are obtained. In addition, the etch rate of GaSb is characterized as a function of various system parameters, i.e., substrate temperature, chlorine pressure, and laser fluence. Spatially well resolved, anisotropic etching of 0.5 μm features has been achieved. © 1995 American Institute of Physics.
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79.20.Ds Laser-beam impact phenomena
81.65.-b Surface treatments
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light

Evidence from ion channeling images for the elastic relaxation of a Si0.85Ge0.15 layer grown on a patterned Si substrate

P. J. C. King, M. B. H. Breese, P. J. M. Smulders, A. J. Wilkinson, G. R. Booker, E. H. C. Parker, and G. W. Grime

Appl. Phys. Lett. 67, 3566 (1995); http://dx.doi.org/10.1063/1.115319 (3 pages) | Cited 3 times

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We demonstrate the ability of ion channeling analysis using a scanned, focused, 2 MeV proton beam from a nuclear microprobe to detect and quantify elastic relaxation in a Si1−xGex layer grown on a Si substrate. Channeling images of a sample consisting of a Si0.85Ge0.15 layer grown on a substrate patterned to produce 10 μm wide raised mesas were produced which revealed lattice plane bending of up to 0.25°, consistent with elastic relaxation of the epilayer. The channeling results are compared with those produced from electron backscattering diffraction. © 1995 American Institute of Physics.
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68.37.Vj Field emission and field-ion microscopy
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.55.-a Thin film structure and morphology

Influence of low energy Ar‐sputtering on the electronic properties of InAs‐based quantum well structures

P. H. C. Magnée, S. G. den Hartog, B. J. van Wees, T. M. Klapwijk, W. van de Graaf, and G. Borghs

Appl. Phys. Lett. 67, 3569 (1995); http://dx.doi.org/10.1063/1.115320 (3 pages) | Cited 26 times

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The influence of low energy (80–500 eV) Ar‐ion milling cleaning techniques on InAs based quantum well structures is investigated. It is found that both etching with a Kaufmann source and sputter‐etching with a rf‐plasma enhances the electron density and reduces the mobility. An anneal at 180 °C has little effect, and only recovers damage caused by low energy (80 eV) Kaufmann etching. © 1995 American Institute of Physics.
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61.80.Jh Ion radiation effects
71.55.Eq III-V semiconductors
81.65.-b Surface treatments

Near‐field optical characterization of the photoluminescence from partially ordered (GaIn)P

M. J. Gregor, P. G. Blome, R. G. Ulbrich, P. Grossmann, S. Grosse, J. Feldmann, W. Stolz, E. O. Göbel, D. J. Arent, M. Bode, K. A. Bertness, and J. M. Olson

Appl. Phys. Lett. 67, 3572 (1995); http://dx.doi.org/10.1063/1.115321 (3 pages) | Cited 20 times

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The two photoluminescence bands typically observed in partially ordered (GaIn)P are studied with a spatial resolution of 270 nm by use of scanning near‐field optical microscopy at low temperature. Local luminescence spectra show a strong spatial variation of the low energetic emission in lineshape and peak position whereas the same attributes of the high energetic emission differ only slightly for all investigated areas of the sample. The intensities of both photoluminescence bands are anticorrelated in space on a 0.5–1.5 μm scale. TEM investigations show that the structure of the sample is inhomogeneous on the same length scale. © 1995 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Vacancy generation resulting from electrical deactivation of arsenic

D. W. Lawther, U. Myler, P. J. Simpson, P. M. Rousseau, P. B. Griffin, and J. D. Plummer

Appl. Phys. Lett. 67, 3575 (1995); http://dx.doi.org/10.1063/1.115322 (3 pages) | Cited 49 times

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Electrical deactivation of arsenic in highly doped silicon has been studied using the positron‐beam technique. Direct experimental evidence linking the formation of arsenic‐vacancy complexes (i.e., Asn‐v) to the deactivation process is reported. The average number of arsenic atoms per complex, math≳2, was determined by comparing the observed complex concentrations with those of the deactivated arsenic inferred from Hall‐effect measurements. © 1995 American Institute of Physics.
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61.72.J- Point defects and defect clusters
71.55.Cn Elemental semiconductors

Origins of interfacial disorder in GaSb/InAs superlattices

P. M. Thibado, B. R. Bennett, M. E. Twigg, B. V. Shanabrook, and L. J. Whitman

Appl. Phys. Lett. 67, 3578 (1995); http://dx.doi.org/10.1063/1.115323 (3 pages) | Cited 11 times

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The interface surfaces of short‐period GaSb/InAs superlattices grown by molecular beam epitaxy have been studied in situ with scanning tunneling microscopy. Migration enhanced epitaxy was used at the interfaces in order to control bond type. Interfaces on GaSb(001) are found to be smoother than those on strained InAs(001), and the InSb‐like interfaces are smoother than GaAs‐like ones. The primary source of disorder at these interfaces appears to be the kinetically determined topography of the growth surfaces, with intermixing playing a secondary role. © 1995 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.55.-a Thin film structure and morphology

Influence of the position of deep levels on generation‐recombination noise

A. Godoy, A. Palma, J. A. Jiménez‐Tejada, and J. E. Carceller

Appl. Phys. Lett. 67, 3581 (1995); http://dx.doi.org/10.1063/1.115324 (3 pages) | Cited 2 times

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Power spectral density due to deep traps has been calculated in a junction field effect transistor (JFET) by a numerical procedure. Distribution of potential, density of carriers, and occupation factors were evaluated for any point of the structure. Different effects were found depending on the depth of the trap considered, such as spectra different from the pure Lorentzian shape or anomalous behavior of the noise amplitude with reverse voltage applied. The explanation of these effects may be useful for the characterization of midgap levels produced in JFETs under irradiation stress. Good agreement is achieved with the experiment. © 1995 American Institute of Physics.
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72.70.+m Noise processes and phenomena
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Tv Field effect devices

p‐ to n‐type conversion in GaSb by ion beam milling

G. N. Panin, P. S. Dutta, J. Piqueras, and E. Dieguez

Appl. Phys. Lett. 67, 3584 (1995); http://dx.doi.org/10.1063/1.115325 (3 pages) | Cited 13 times

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Inversion in conductivity type of GaSb from p‐ to n‐ has been observed as a result of argon ion beam milling. Electron beam induced current (EBIC) measurements have been employed for detecting the type conversion. Enhancement in the luminescence intensity is seen after ion beam treatment. The type conversion is proposed to occur due to a combined effect of generation of native donors and gettering of native acceptors originally present in the as‐grown samples. © 1995 American Institute of Physics.
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61.72.J- Point defects and defect clusters
61.80.Jh Ion radiation effects
71.55.Eq III-V semiconductors

PdAl Schottky contact to In0.52Al0.48As grown by metalorganic chemical vapor deposition

C.‐F. Lin, Y. A. Chang, N. Pan, J.‐W. Huang, and T. F. Kuech

Appl. Phys. Lett. 67, 3587 (1995); http://dx.doi.org/10.1063/1.115326 (3 pages) | Cited 7 times

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β‐PdAl was studied as a Schottky contact to metalorganic chemical vapor deposition grown In0.52Al0.48As. Intermetallic alloy β‐PdAl was chosen in order to utilize the Al–In exchange reaction which may occur between PdAl and In0.52Al0.48As, which would result in an enhanced Schottky barrier height. I–V, C–V, and deep level transient spectroscopy (DLTS) were used to determine the contact characteristics. The contact barrier height (ϕb) was measured by I–V and C–V methods after different annealing conditions, and good agreement between I–V and C–V results were obtained. The largest ϕb value is 0.67 eV from I–V measurement (0.69 eV from C–V) after the diode was annealed at 450 °C for 1 min. DLTS measurements were carried out to examine the effect of deep traps in the In0.52Al0.48As layer. Two deep levels were found, but the concentrations are lower than the intrinsic donor concentration obtained from the Hall method. The activation energies for these two deep levels obtained from an Arrhenius plot are 0.38 and 0.65 eV, respectively. © 1995 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Surface roughness and defect morphology in electron cyclotron resonance hydrogen plasma cleaned (100) silicon at low temperatures

Ki‐Hyun Hwang, Euijoon Yoon, Ki‐Woong Whang, and Jeong Yong Lee

Appl. Phys. Lett. 67, 3590 (1995); http://dx.doi.org/10.1063/1.115327 (3 pages) | Cited 17 times

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Surface roughening of (100) Si at low temperatures during electron cyclotron resonance hydrogen plasma cleaning is studied in an ultrahigh vacuum environment. The effects of process parameters on surface roughness are quantitatively analyzed by atomic force microscopy besides reflection high energy electron diffraction. Crystalline defect morphology is studied by transmission electron microscopy to understand its role in surface roughness. Surface roughness is strongly related to the nucleation and growth of {111} platelet defects at the Si subsurface region and the preferential etching at positions where {111} platelet defects intersect the Si surface. Hydrogen ion flux and substrate temperature can be successfully controlled to tailor the {111} platelet defects, therefore, surface roughness. © 1995 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.-b Surface treatments

Determination of the X conduction‐subband energies in type II GaAs/AlAs/GaAs quantum well by deep level transient spectroscopy

Qin‐Sheng Zhu, Zong‐Quan Gu, Zhan‐Tian Zhong, Zeng‐Qi Zhou, and Li‐Wu Lu

Appl. Phys. Lett. 67, 3593 (1995); http://dx.doi.org/10.1063/1.115328 (3 pages) | Cited 2 times

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Using deep level transient spectroscopy (DLTS) the X conduction‐subband energy levels in an AlAs well sandwiched by double GaAs layers were determined. Calculation gives eight subbands in the well with well width of 50 Å. Among them, five levels and the other three remainders are determined by using the large longitudinal electron effective mass m1(1.1m0) and transverse electron effective mass mt(0.19m0) at X valley, respectively. Two subbands with the height energies were hardly detectable and the other six ones with lower energies are active in the present DLTS study. Because these six subbands are close to each other, we divided them into three groups. Experimentally, we observed three signals induced from the three groups. A good agreement between the calculation and experiment was obtained. © 1995 American Institute of Physics.
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71.55.Eq III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
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