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11 Dec 1995

Volume 67, Issue 24, pp. 3523-3656

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Electrical properties of Schottky barrier formed on as‐grown and oxidized surface of homoepitaxially grown diamond (001) film

Hideo Kiyota, Eiichi Matsushima, Keisuke Sato, Hideyo Okushi, Toshihiro Ando, Mutsukazu Kamo, Yoichiro Sato, and Masamori Iida

Appl. Phys. Lett. 67, 3596 (1995); http://dx.doi.org/10.1063/1.115329 (3 pages) | Cited 42 times

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Characteristics of Schottky barriers formed on homoepitaxial diamond film have been studied. Current–voltage characteristics of Al contacts on both the as‐grown film and the oxidized film show rectification. On the other hand, ohmic property is observed on Au/as‐grown film while Au/oxidized film shows rectification. These results imply that the mechanism of the barrier formation on the as‐grown diamond is drastically changed by oxidation. The difference of electrical properties between the as‐grown film and the oxidized film is also observed from capacitance–voltage characteristics. This result suggests that additional acceptors which are not related to boron, exist in the as‐grown film and disappear after oxidation. © 1995 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Room‐temperature photoluminescence of erbium‐doped hydrogenated amorphous silicon

M. S. Bresler, O. B. Gusev, V. Kh. Kudoyarova, A. N. Kuznetsov, P. E. Pak, E. I. Terukov, I. N. Yassievich, B. P. Zakharchenya, W. Fuhs, and A. Sturm

Appl. Phys. Lett. 67, 3599 (1995); http://dx.doi.org/10.1063/1.115330 (3 pages) | Cited 70 times

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A comparison of the photoluminescence of Er‐doped hydrogenated amorphous silicon and crystalline silicon a‐Si:H(Er) and c‐Si(Er), is presented. It is shown that a‐Si:H(Er) exhibits efficient room‐temperature photoluminescence at 1.537 μm which is as strong as the emission from optimized c‐Si(Er) at 2 K. Most remarkably, there is practically no temperature quenching of the emission intensity in the range 2–300 K. The experiments suggest that the lifetime connected with the Er‐induced emission is considerably shorter in a‐Si:H(Er) than in c‐Si(Er) which may be responsible for the different dependences of the photoluminescence intensity on the temperature, chopping frequency, and excitation power. © 1995 American Institute of Physics.
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71.55.Jv Disordered structures; amorphous and glassy solids
78.55.Hx Other solid inorganic materials

Radiative recombination in near‐surface strained Si1−xGex/Si quantum wells

S. Fukatsu, H. Akiyama, Y. Shiraki, and H. Sakaki

Appl. Phys. Lett. 67, 3602 (1995); http://dx.doi.org/10.1063/1.115331 (3 pages) | Cited 5 times

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Influence of the surface on the radiative recombination is studied in near‐surface (NS) strained Si1−xGex/Si quantum wells (QWs). The luminescence intensity of NSQWs is clearly diminished as the Si cap thickness decreases due to carrier capture to the surface. However, the luminescence diminution discloses a saturable behavior with increasing excitation density. Time‐resolved measurements reveal selective electron capture to surface traps as being the controlling process in the luminescence attenuation, and there is no signature of quantum mechanical hole tunneling to the surface. Results of potential‐biased luminescence lend further support to the electron‐controlled picture of the luminescence attenuation in Si‐based near‐surface geometry. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.55.Hx Other solid inorganic materials

2000 h stable operation in 0.87 μm light‐emitting diode using stress‐free InGaP/GaAs/Si

T. Egawa, T. Jimbo, J. Dong, K. Matsumoto, and M. Umeno

Appl. Phys. Lett. 67, 3605 (1995); http://dx.doi.org/10.1063/1.115332 (3 pages)

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We have grown Al‐free reliable 877 nm In0.49Ga0.51P/GaAs light‐emitting diodes (LEDs) on Si substrates by metalorganic chemical vapor deposition. The conventional Al‐containing Al0.3Ga0.7As/GaAs LEDs on Si substrates exhibit rapid degradations because of the formation of dark‐line defects (DLDs). On the contrary, the In0.49Ga0.51P layer on the GaAs/Si substrate exhibited a 300 K electron mobility of 950 cm2/V s with the carrier concentration of 3.8×1017 cm−3, no residual stress and a lower surface recombination velocity. The In0.49Ga0.51P/GaAs LED on Si shows the stable operation for more than 2000 h, which results from the suppression of the formation of DLDs. © 1995 American Institute of Physics.
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78.66.Fd III-V semiconductors
85.60.Jb Light-emitting devices

Novel current–voltage characteristics in an InP‐based resonant‐tunneling high electron mobility transistor

K. J. Chen, K. Maezawa, and M. Yamamoto

Appl. Phys. Lett. 67, 3608 (1995); http://dx.doi.org/10.1063/1.115333 (3 pages) | Cited 13 times

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We report novel current–voltage characteristics in an InP‐based resonant‐tunneling high electron mobility transistor (RTHEMT). This device incorporates a pseudomorphic InGaAs/AlAs/InAs resonant‐tunneling diode into the source of a nonalloyed ohmic contact InAlAs/InGaAs high electron mobility transistor. Both pronounced negative differential resistance and negative transconductance are observed at room temperature. Most significantly, a near‐flat valley current is obtained in the output current–voltage characteristics. This feature is achieved by the nonalloyed ohmic contact cap layer structure employed in the HEMT, which significantly reduces the parasitic resistance. The novel characteristics of RTHEMTs should lead to many attractive circuit applications. © 1995 American Institute of Physics.
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73.40.Gk Tunneling
85.30.Tv Field effect devices

Crystal structure and Raman scattering in Zn1−xMgxSe alloys

Daming Huang, Caixia Jin, Donghong Wang, Xiaohan Liu, Jie Wang, and Xun Wang

Appl. Phys. Lett. 67, 3611 (1995); http://dx.doi.org/10.1063/1.115334 (3 pages) | Cited 18 times

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Zn1−xMgxSe alloys have been grown on (100) GaAs substrates by molecular beam epitaxy. Their crystal structures are determined form x‐ray diffraction spectra and are found to be zinc blende, rocksalt, and their mixture for x<0.5, x=1, and x∼0.6, respectively. The Raman spectra are measured and show two‐mode behavior for those alloys with zinc blende structure. The long‐wavelength frequencies of ZnSe‐ and MgSe‐like optical phonons are determined and the results can be expressed as linear functions of x. The first‐order Raman spectra are observed for MgSe and Mg‐rich Zn1−xMgxSe alloys with rocksalt structure. Those Raman spectra are attributed to the scattering from optical phonons activated by disorders and impurities, and their line shapes represent the phonon density of states. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
78.30.-j Infrared and Raman spectra

Self‐propagating room‐temperature silicon wafer bonding in ultrahigh vacuum

U. Gösele, H. Stenzel, T. Martini, J. Steinkirchner, D. Conrad, and K. Scheerschmidt

Appl. Phys. Lett. 67, 3614 (1995); http://dx.doi.org/10.1063/1.115335 (3 pages) | Cited 47 times

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Wafer bonding of commercial 4 in. silicon wafers has been performed at room temperature under ultrahigh vacuum conditions. After local initiation of the bonding process the bonding area is self‐propagating just as in the case of wafer bonding under atmospheric conditions. The room‐temperature bonded wafers, without any additional heat treatment show a bonding strength typical for bulk material. © 1995 American Institute of Physics.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Spontaneously formed long‐range Al‐rich and Ga‐rich AlxGa1−xAs/AlyGa1−yAs superlattice and optical properties enhancement in (111)A AlGaAs

Albert Chin, B. C. Lin, G. L. Gu, and K. Y. Hsieh

Appl. Phys. Lett. 67, 3617 (1995); http://dx.doi.org/10.1063/1.115336 (3 pages) | Cited 4 times

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Spontaneously formed long‐range Al‐rich and Ga‐rich AlxGa1−xAs/AlyGa1−yAs superlattice in (111)A was demonstrated. This was observed by cross‐sectional transmission electron microscopy (TEM) in 0.75 μm Al0.30Ga0.70As grown on (111)A GaAs substrates at 640 °C. In contrast, none of the above superstructure was observed by TEM on a side‐by‐side grown (100) oriented substrate. 15 K photoluminescence (PL) showed a 31 meV redshift and six times peak intensity enhancement in layers grown on (111)A substrates to that on (100). A reduced long‐range compositional modulation can be achieved by growth at higher temperatures and is shown in the finer and moderately modulating (111)A Al0.40Ga0.60As grown at 700 °C. A 15 K PL linewidth of 17 meV was achieved in 700 °C grown (111)A A0.40Ga0.60As that is the narrowest reported linewidth for (111)A AlGaAs. © 1995 American Institute of Physics.
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68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
68.55.-a Thin film structure and morphology
78.55.Cr III-V semiconductors

Infrared investigation of deuterated Si(111) surface formed in hot heavy water

Satoru Watanabe

Appl. Phys. Lett. 67, 3620 (1995); http://dx.doi.org/10.1063/1.115337 (3 pages) | Cited 5 times

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A deuterated Si(111) surface has been fabricated by wetting in deionized hot heavy water without oxidizing the surface. The surface had a single dominant absorption feature with a narrow width in the infrared spectrum. The surface was mainly composed of monodeuterides whose Si–D bonds are normal to the surface, and partially of other deuteride structures. The surface structure was quite similar to H/Si(111) formed in hot water. © 1995 American Institute of Physics.
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68.35.Ja Surface and interface dynamics and vibrations
81.65.-b Surface treatments

Growth of polycrystalline silicon at 470 °C by magnetron sputtering onto a sputtered μc‐hydrogenated silicon seed layer

Y. H. Yang and J. R. Abelson

Appl. Phys. Lett. 67, 3623 (1995); http://dx.doi.org/10.1063/1.115338 (3 pages) | Cited 11 times

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We deposit polycrystalline silicon (px‐Si) with mean grain diameter ∼400 Å using dc magnetron sputtering of a Si target in an Ar plasma. We analyze the nucleation process and crystallite size as a function of film thickness using in situ, real time spectroscopic ellipsometry. For direct deposition on glass substrates at 470 °C, the initial ∼0.3 μm is amorphous silicon, then crystalline nuclei appear, and the growth becomes fully polycrystalline by ∼0.6 μm. To promote nucleation, we deposit a 100 Å layer of μc‐Si:H (hydrogenated polycrystalline silicon with a mean grain diameter of ∼60 Å) by sputtering in an Ar plus H2 atmosphere at 210 °C. Returning to an Ar‐only plasma at 470 °C, px‐Si grows on this seeded substrate with no detectable amorphous interfacial layer. Since magnetron sputtering is a large‐area, high throughput technique, this two‐step process appears technologically attractive. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering

Effect of step structure on ordering in GaInP

L. C. Su and G. B. Stringfellow

Appl. Phys. Lett. 67, 3626 (1995); http://dx.doi.org/10.1063/1.115339 (3 pages) | Cited 15 times

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Ga0.5ln0.5P layers grown by organometallic vapor phase epitaxy at rates of between 0.1 and 4.0 μm/h on exactly (001)‐oriented GaAs substrates have been studied using atomic force microscopy. The surface is found to be covered by islands several monolayers in height that are elongated in the [110] direction. The edges of the islands are formed of clearly resolved bilayer (5.9 Å) steps. Monolayer steps are rare and no steps larger than 6 Å were observed. These observations explain the nature of the order twin boundaries in ordered GaInP grown on exactly (001)‐oriented substrates. The (001) domain laminae are always found to consist of an even number of monolayers. For bilayer steps, the domain thickness will be twice the number of steps moving across the surface before the direction of step motion switches due to the undulating nature of the surface. This switch in the direction of step motion at a particular location on the surface produces the order twin boundaries observed. © 1995 American Institute of Physics.  
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.55.-a Thin film structure and morphology

Temperature dependent pohotoluminescence investigation of AlGaAs/GaAs quantum wires grown by flow rate modulation epitaxy

Xue‐Lun Wang, Mutsuo Ogura, and Hirofumi Matsuhata

Appl. Phys. Lett. 67, 3629 (1995); http://dx.doi.org/10.1063/1.115340 (3 pages) | Cited 28 times

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The temperature dependence of photoluminescence (PL) properties of AlGaAs/GaAs quantum wire (QWR) grown on V‐grooved substrates by flow rate modulation epitaxy is investigated. PL from a 7.1 nm thick QWR is easily observed even at room temperature. The full width at half‐maximum (FWHM) of the QWR emission peak increases linearly with increasing temperature at low temperatures and becomes almost independent of temperature at high temperatures, while that of a quantum well layer (QWL) sample increases with increasing temperature up to room temperature. The FWHM of QWR is found to be considerably narrower than that of the QWL sample at high temperatures, which is expected theoretically from the sharp one‐dimensional density of states of QWR but has not been clearly observed experimentally. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors

Dislocation behavior in InGaAs step‐ and alternating step‐graded structures: Design rules for buffer fabrication

D. Araújo, D. González, R. García, A. Sacedón, and E. Calleja

Appl. Phys. Lett. 67, 3632 (1995); http://dx.doi.org/10.1063/1.115341 (3 pages) | Cited 4 times

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A comparison between compositionally stepped and alternating step‐graded structures used in the production of a relaxation buffer layer is carried out by means of transmission electron microscopy. The latter shows higher efficiency in relieving the strain. A simple balance force model permits us to understand the reason for a higher generation of threading dislocations observed in the alternating step‐graded structures. The presented results can be applied as new design rules for buffer fabrication that contrast in some key points with previous published rules as, for example, the ‘‘zero‐net‐strain’’ precept [D. Dunstan, P. Kidd, P. F. Fewster, N. L. Andrew, L. González, Y. González, A. Sacedón, and F. González‐Sanz, Appl. Phys. Lett. 65, 845 (1994)]. © 1995 American Institute of Physics.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.66.Fd III-V semiconductors

Effect of chemical and ion‐beam etching on the atomic structure of interfaces in YBa2Cu3O7/PrBa2Cu3O7 Josephson junctions

C. L. Jia, M. I. Faley, U. Poppe, and K. Urban

Appl. Phys. Lett. 67, 3635 (1995); http://dx.doi.org/10.1063/1.115342 (3 pages) | Cited 21 times

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The atomic structure of the interfaces of Josephson junctions formed by epitaxial YBa2Cu3O7/PrBa2Cu3O7/YBa2Cu3O7 triple‐layer films was investigated by high‐resolution transmission electron microscopy. The samples were fabricated by sputter deposition on surfaces which were etched ex situ either chemically, using a nonaqueous Br‐ethanol solution, or by an Ar ion beam. In the interfaces produced after ion etching a thin intermediate layer with a thickness of a few nanometers was observed. The main part of this layer consists of cubic PrBa2Cu3O7 or YBa2Cu3O7 which is cation disordered. The interfaces formed during deposition on Br‐ethanol‐etched surfaces did not contain such an intermediate layer but exhibited high structural perfection similar to that of interfaces produced in situ. These observations permit a qualitative explanation of the difference in the electrical properties of junctions produced by these two techniques. © 1995 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.-b Surface treatments
85.25.Cp Josephson devices

MgO seed layers for CoCrPt/Cr longitudinal magnetic recording media

Li‐Lien Lee, B. K. Cheong, D. E. Laughlin, and D. N. Lambeth

Appl. Phys. Lett. 67, 3638 (1995); http://dx.doi.org/10.1063/1.115343 (3 pages) | Cited 18 times

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Sputter deposited MgO thin films with the B1 crystal structure and (002) film texture are used as seed layers to improve the texture and magnetic properties of the CoCrPt/Cr magnetic thin films on glass substrates for longitudinal recording. The desired (002) textured Cr underlayers are usually obtained by sputtering Cr onto heated substrates. However, it is found that the MgO seed layers can induce the (002) film texture in the Cr underlayers without using a heated substrate and hence, the overlying CoCrPt films are formed with the (1120) texture. Vibrating‐sample magnetometry measurements show greatly improved in‐plane coercivities that are suitable for future high density recording media can be easily obtained. © 1995 American Institute of Physics.
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75.70.-i Magnetic properties of thin films, surfaces, and interfaces
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.

Magneto‐mechanical instability in Terfenol‐D films

Manfred Wuttig, Quanmin Su, Y. Zheng, and Yiting Wen

Appl. Phys. Lett. 67, 3641 (1995); http://dx.doi.org/10.1063/1.115344 (3 pages) | Cited 2 times

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Tensioned 1 μm nanocrystalline Terfenol‐D films on 50 μm Si substrates display a pronounced damping maximum at a magnetic field of about 1.5 kOe oriented perpendicular to the plane of the film. The phenomenon is critically dependent on the orientation of the magnetic field and is the result of a magnetomechanical instability in the Terfenol film. © 1995 American Institute of Physics.
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75.70.-i Magnetic properties of thin films, surfaces, and interfaces
75.80.+q Magnetomechanical effects, magnetostriction

Pulsed excimer laser etching of La0.75Ca0.25MnOx thin films

A. M. Dhote, R. Shreekala, S. I. Patil, S. B. Ogale, T. Venkatesan, and C. M. Williams

Appl. Phys. Lett. 67, 3644 (1995); http://dx.doi.org/10.1063/1.115345 (3 pages) | Cited 4 times

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Pulsed (λ=248 nm, pulse width=20 ns) KrF‐excimer‐laser‐induced etching of La0.75Ca0.25MnOx (LCMO) thin films exhibiting giant magnetoresistance (GMR) has been studied. The variation of etch depth as a function of the number of laser pulses shows a linear dependence in the fluence range between 0.15 and 4 J cm−2. The threshold fluence for ablation is found to be 0.07 J cm−2. The photoetching process is seen to follow the Beer–Lambert’s relation based on a linear absorption model with an absorption length of 28.3 nm. The nanomorphology of the laser etched surface as revealed by atomic force microscopy shows significant improvement in the surface smoothness of the deposited films for etching at low energy densities (typically 0.17 J cm−2) and enhanced roughness at higher energy densities (typically 0.86 J cm−2). Changes in the resistivity and GMR effect due to laser treatment are also examined. © 1995 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
81.65.-b Surface treatments

X‐ray Fraunhofer diffraction patterns from a thin‐film waveguide

Y. P. Feng, S. K. Sinha, Eric E. Fullerton, G. Grübel, D. Abernathy, D. P. Siddons, and J. B. Hastings

Appl. Phys. Lett. 67, 3647 (1995); http://dx.doi.org/10.1063/1.115346 (3 pages) | Cited 24 times

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We have observed the Fraunhofer diffraction pattern of x‐rays exiting from the end face of a SiO2/polyimide/Si thin‐film waveguide. The measured angular intensity distributions are in excellent agreement with those calculated based on the dimensions and the refractive index profile of the guide. Our measurement confirms that, at the end face of the guide, the wavefront of a single guided mode is fully coherent in the direction normal to the guiding plane. This focused and transversely coherent x‐ray beam may be used as a source for coherence‐based experiments, such as x‐ray photon correlation spectroscopy. © 1995 American Institute of Physics.
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07.85.Qe Synchrotron radiation instrumentation
42.25.Fx Diffraction and scattering
78.70.Ck X-ray scattering
FREE

Comment on ‘‘Enhanced Jc’s of YBa2Cu3O7−x–Ag ex situ annealed coevaporated films on LaAlO3 (100) substrates’’ [Appl. Phys. Lett. 65, 2350 (1994)]

P. Selvam

Appl. Phys. Lett. 67, 3650 (1995); http://dx.doi.org/10.1063/1.115347 (3 pages) | Cited 4 times

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Abstract Unavailable
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74.25.F- Transport properties
74.25.Sv Critical currents
74.78.-w Superconducting films and low-dimensional structures
FREE

Response to ‘‘Comment on ‘Enhanced Jc’s of YBa2Cu3O7−x–Ag ex situ annealed coevaporated films on LaAlO3 (100) substrates’ ’’ [Appl. Phys. Lett. 67, 3650 (1995)]

T. Clausen, M. Ejrnæs, M. Olesen, K. Hilger, J. L. Skov, P. Bodin, A. Kühle, and I. Chorkendorff

Appl. Phys. Lett. 67, 3652 (1995); http://dx.doi.org/10.1063/1.115348 (1 page)

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Abstract Unavailable
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74.25.F- Transport properties
74.25.Sv Critical currents
74.78.-w Superconducting films and low-dimensional structures
FREE

Comment on ‘‘Calculation of resonant absorption and photoresponse measurement in p‐type GaAs/AlGaAs quantum wells’’ [Appl. Phys. Lett. 66, 1659 (1995)]

P. Man and D. S. Pan

Appl. Phys. Lett. 67, 3653 (1995); http://dx.doi.org/10.1063/1.115349 (2 pages)

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Abstract Unavailable
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78.66.Fd III-V semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)
FREE

Response to ‘‘Comment on ‘Calculation of resonant absorption and photoresponse measurement in p‐type GaAs/AlGaAs quantum wells’ ’’ [Appl. Phys. Lett. 67, 3653 (1995)]

Frank Szmulowicz and Gail J. Brown

Appl. Phys. Lett. 67, 3655 (1995); http://dx.doi.org/10.1063/1.115350 (2 pages)

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78.66.Fd III-V semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)
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