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25 Dec 1995

Volume 67, Issue 26, pp. 3835-3983

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Molecular light‐emitting diodes using quinquethiophene Langmuir–Blodgett films

A. J. Pal, J. Paloheimo, and H. Stubb

Appl. Phys. Lett. 67, 3909 (1995); http://dx.doi.org/10.1063/1.115314 (3 pages) | Cited 20 times

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We report extended studies on electroluminescence from molecularly thin semiconducting Langmuir–Blodgett films of quinquethiophene. The effect of the thickness of active layer and cathode electrode material has been investigated. From all these devices, greenish electroluminescence (visible in a dark room) has been observed with quantum efficiencies of the order of 10−3%. Even five or nine layers of Langmuir–Blodgett films yield the same luminance as thicker films. The electroluminescence spectrum showed a profile identical to the photo‐ luminescence spectrum. © 1995 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
85.60.Jb Light-emitting devices

Observation of a negative electron affinity for boron nitride

M. J. Powers, M. C. Benjamin, L. M. Porter, R. J. Nemanich, R. F. Davis, J. J. Cuomo, G. L. Doll, and Stephen J. Harris

Appl. Phys. Lett. 67, 3912 (1995); http://dx.doi.org/10.1063/1.115315 (3 pages) | Cited 79 times

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This study reports UV‐photoemission (UPS) measurements made on boron nitride crystals and thin films. The materials examined are commercial grade c‐BN powder and thin films of BN deposited with ion beam assisted e‐beam evaporation and laser ablation. The thin film samples examined exhibited varying amounts of sp3 (cubic) and sp2 (hexagonal, amorphous) bonding as determined by FTIR measurements. The UPS measurements displayed the spectral distribution of the low energy photoemitted electrons and the total energy width of the spectra. These characteristics can be related to the electron affinity. The measurements on several of the BN powder and thin film samples revealed features in the emission spectra which are indicative of a negative electron affinity (NEA) surface. © 1995 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Defect‐free band‐edge photoluminescence and band gap measurement of pseudomorphic Si1−x−yGexCy alloy layers on Si (100)

A. St. Amour, C. W. Liu, J. C. Sturm, Y. Lacroix, and M. L. W. Thewalt

Appl. Phys. Lett. 67, 3915 (1995); http://dx.doi.org/10.1063/1.115316 (3 pages) | Cited 62 times

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Pseudomorphic Si1−x−yGexCy alloy layers on Si (100) with band‐edge photoluminescence and without defect‐related luminescence have been achieved. The photoluminescence was measured from 2 to 77 K and was used to make a direct measurement of the band gap shift as a function of strain reduction as C was added. Compared to the effect of just reducing Ge content, results show that as C is added, strain is reduced more efficiently than the band gap is increased. Furthermore, results imply that a fully strain‐compensated Si1−x−yGexCy layer on Si (100) would have a band gap much less than that of Si, and suggest that initial C incorporation reduces the band gap of relaxed, unstrained Si1−x−yGexCy alloys. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Hx Other solid inorganic materials
78.66.Li Other semiconductors

Parallel atomic force microscopy using cantilevers with integrated piezoresistive sensors and integrated piezoelectric actuators

S. C. Minne, S. R. Manalis, and C. F. Quate

Appl. Phys. Lett. 67, 3918 (1995); http://dx.doi.org/10.1063/1.115317 (3 pages) | Cited 163 times

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We have fabricated and operated two cantilevers in parallel in a new mode for imaging with the atomic force microscope (AFM). The cantilevers contain both an integrated piezoresistive silicon sensor and an integrated piezoelectric zinc oxide (ZnO) actuator. The integration of sensor and actuator on a single cantilever allows us to simultaneously record two independent AFM images in the constant force mode. The ZnO actuator provides over 4 μm of deflection at low frequencies (dc) and over 30 μm deflection at the first resonant frequency. The piezoresistive element is used to detect the strain and provide the feedback signal for the ZnO actuator. © 1995 American Institute of Physics.
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07.79.Lh Atomic force microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Strain relaxation in silicon‐germanium microstructures observed by resonant tunneling spectroscopy

A. Zaslavsky, K. R. Milkove, Y. H. Lee, B. Ferland, and T. O. Sedgwick

Appl. Phys. Lett. 67, 3921 (1995); http://dx.doi.org/10.1063/1.115318 (3 pages) | Cited 10 times

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We have measured the resonant tunneling current–voltage I(V) characteristics of strained p‐Si/Si1−xGex double‐barrier microstructures ranging from 1.0 to 0.1 μm in lateral extent. The bias spacing between resonant current peaks in the I(V) reflects the energy separation of the Si1−xGex quantum well subbands, which is partially determined by the strain. As the lateral size of the structures decreases, we observe consistent shifts in the I(V) peak spacing corresponding to strain energy relaxation of ∼30% in smaller structures. An additional I(V) fine structure is observed in the 0.1 μm device, consistent with lateral quantization due to nonuniform strain. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.40.Gk Tunneling

Photon‐assisted tunneling through a quantum dot at high microwave frequencies

R. H. Blick, R. J. Haug, D. W. van der Weide, K. von Klitzing, and K. Eberl

Appl. Phys. Lett. 67, 3924 (1995); http://dx.doi.org/10.1063/1.114406 (3 pages) | Cited 70 times

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We investigate the influence of high frequency microwave radiation on single electron tunneling through a quantum dot. Effective coupling of the radiation to the quantum dot is achieved by an on‐chip integrated broadband antenna. Simulations of the current distribution on the antenna are shown. We find that radiation with a frequency of ν=155 GHz, which corresponds to half of the bare charging energy Ec/2 results in an additional conductance peak within the Coulomb blockade regime. This additional resonance is attributed to photon‐assisted tunneling. © 1995 American Institute of Physics.
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73.40.Gk Tunneling
85.60.Gz Photodetectors (including infrared and CCD detectors)

Nitrogen doping during atomic layer epitaxial growth of ZnSe

Z. Zhu, G. Horsburgh, P. J. Thompson, G. D. Brownlie, S. Y. Wang, K. A. Prior, and B. C. Cavenett

Appl. Phys. Lett. 67, 3927 (1995); http://dx.doi.org/10.1063/1.114407 (3 pages) | Cited 3 times

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This letter reports the growth and characterization of ZnSe:N layers by atomic layer epitaxy (ALE) using a nitrogen rf‐plasma source. The ALE‐grown ZnSe:N layers have been investigated in terms of in situ reflection high electron energy diffraction and ex situ capacitance–voltage profiling and photoluminescence spectroscopy. The net acceptor concentration in the ALE‐grown layer has been obtained as high as 1.2×1018 cm−3 and the ALE layers of ZnSe:N show reduced number of compensating deep centers compared with the ZnSe:N grown by molecular beam epitaxy. The effects of the Fermi level at a growing surface on the generation of compensating donors with a binding energy of 57 meV are also discussed. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology

Recombination activity of iron‐related complexes in silicon studied by temperature dependent carrier lifetime measurements

A. Kaniava, A. L. P. Rotondaro, J. Vanhellemont, U. Menczigar, and E. Gaubas

Appl. Phys. Lett. 67, 3930 (1995); http://dx.doi.org/10.1063/1.114408 (3 pages) | Cited 8 times

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Carrier recombination centers related with iron complexes in p‐type silicon are studied by microwave and light‐induced absorption techniques. Both thermal‐ and photoactivation are used to decompose iron–boron pairs and to study the impact on the recombination lifetime. Due to photodissociation of iron–boron pairs the lifetime increases for high level injection. Efficient recombination occurs via an acceptor level at Ec−0.29 eV as derived from the temperature dependence of carrier lifetime. © 1995 American Institute of Physics.
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71.55.Cn Elemental semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Electrical properties of Si1−xCx alloys and modulation doped Si/Si1−xCx/Si structures

W. Faschinger, S. Zerlauth, G. Bauer, and L. Palmetshofer

Appl. Phys. Lett. 67, 3933 (1995); http://dx.doi.org/10.1063/1.114409 (3 pages) | Cited 22 times

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We report electrical properties of undoped and Sb‐doped Si1−xCx alloys grown by molecular beam epitaxy. Nominally undoped alloy layers exhibit electron background levels of 4×1016 cm−3 with a mobility above 30 000 cm2/V s at low temperatures. The layers can be doped with Sb at low growth temperatures, and the carrier concentrations and mobilities obtained are comparable to similarly doped Si layers. Modulation‐doped Si/Si1−xCx/Si structures with the modulation doping in the Si layer close to the surface exhibit enhanced electron mobilities with peak values of about 10 000 cm2/V s, indicating that Si1−xCx strained on a silicon substrate forms an electron channel. From the saturation carrier concentration at low temperatures, the electron barrier between Si and Si0.98C0.02 is estimated to be about 150 meV. In lightly doped channel structures carrier freeze‐out at low temperatures is observed, indicating a relatively high defect density in the channel. © 1995 American Institute of Physics.
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61.72.uf Ge and Si
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

High‐performance InGaAs photodetectors on Si and GaAs substrates

F. E. Ejeckam, C. L. Chua, Z. H. Zhu, Y. H. Lo, M. Hong, and R. Bhat

Appl. Phys. Lett. 67, 3936 (1995); http://dx.doi.org/10.1063/1.114410 (3 pages) | Cited 33 times

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In this work, we demonstrate record low dark current operation of InGaAs (1.55 μm) p‐i‐n photodetectors on both silicon and gallium arsenide substrates using a wafer bonding technique. The photodetectors were made by first bonding the p‐i‐n epitaxial layers to the Si and GaAs substrate followed by chemical removal of the host (InP) substrate from the p‐i‐n structure. The photodetector was then fabricated atop the newly exposed p‐i‐n epilayers. Dark currents of as low as 57 pA on a GaAs substrate and 0.29 nA on a Si substrate were measured under 5 V reverse bias. The responsivity at 1.55 μm wavelength was measured to be 1 A/W, corresponding to an external quantum efficiency of 80%. The series resistance measured across the bonded interface gave 17 Ω on GaAs and 350 Ω on Si, respectively. © 1995 American Institute of Physics.
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73.50.Pz Photoconduction and photovoltaic effects
78.66.Fd III-V semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Deposition of high dielectric constant materials by dual spectral sources assisted metalorganic chemical vapor deposition

R. Singh, S. Alamgir, and R. Sharangpani

Appl. Phys. Lett. 67, 3939 (1995); http://dx.doi.org/10.1063/1.114411 (3 pages) | Cited 16 times

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The development of new high dielectric constant materials is essential for the development of advanced silicon integrated circuits. In this letter, we report preliminary results of lanthanum doped lead zirconate titanate (PLZT) films deposited by dual spectral sources (DSS) rapid isothermal processing (RIP) assisted metalorganic chemical vapor deposition (MOCVD) system. The dielectric constant and leakage current density data reported in this letter represents the best results reported to date. The use of high energy photons play an important role in the deposition of high quality dielectric films © 1995 American Institute of Physics.
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77.55.-g Dielectric thin films
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Surface‐related breakdown in silicon: Imaging of current filaments in long p+‐n−‐n+ structures

B. J. Hankla, P. F. Williams, G. A. Frecks, and F. E. Peterkin

Appl. Phys. Lett. 67, 3942 (1995); http://dx.doi.org/10.1063/1.114412 (3 pages)

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We present Schlieren images which show the existence and evolution of current filaments during the very early stages of surface‐related breakdown inside 1 cm silicon p+‐n−‐n+ structures. These images confirm our previous finding that breakdown occurs in the silicon rather than in the ambient, and suggest that a streamerlike mechanism may be responsible. © 1995 American Institute of Physics.
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72.20.Ht High-field and nonlinear effects

Detailed experimental investigation of a local defect layer used for Si solar cells

M. K. Zundel, W. Csaszar, and A. L. Endrös

Appl. Phys. Lett. 67, 3945 (1995); http://dx.doi.org/10.1063/1.114413 (3 pages) | Cited 2 times

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The structural, electronic, and optical properties of the so‐called local defect layer (LDL), the key feature of the junction near the local defect layer (JNLD) Si solar cell, have been studied after each processing step using transmission electron microscopy, spreading resistance (SR), and absorption measurements. Our results show that a layer of 20–80 nm sized bubbles is formed beneath the Si surface after proton implantation and a two‐step annealing process. The SR profiles reveal that the implantation‐damaged Si material is almost electronically reconstituted after the second annealing step. This LDL absorbs less than 2% of the sunlight; therefore, the efficiency of a JNLD solar cell cannot be increased by more than 2% (relative) compared to an unimplanted reference cell. However, by using higher implantation doses a buried textured layer is formed which leads to an enhanced absorption and has a similar beneficial effect in solar cells as a textured surface. © 1995 American Institute of Physics.
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61.80.Jh Ion radiation effects
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
84.60.Jt Photoelectric conversion

Indium desorption from InAs surfaces and its dependence on As coverage

M. J. Ekenstedt, H. Yamaguchi, and Y. Horikoshi

Appl. Phys. Lett. 67, 3948 (1995); http://dx.doi.org/10.1063/1.114414 (3 pages)

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The desorption rate of In atoms from an InAs surface and its dependence on surface As coverage is reported. InAs films were grown by molecular beam epitaxy on fully strained 1 monolayer thick In0.75Ga0.25As films deposited on (001) InAs substrates. Using a sensitive technique based on reflection high‐energy electron diffraction, the desorption rate for In is found to be highly dependent on the As coverage. During a sublimation process, where In from an InAs surface is desorbed, the desorption rate at 510 °C is five times greater for a group III stabilized surface than for an As‐stabilized surface. The difference in desorption rate is believed to be related to changes in the In to surface bond strengths. © 1995 American Institute of Physics.
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68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
68.55.-a Thin film structure and morphology

Determination of silicon evaporation rate at 1200 °C in hydrogen

Lei Zhong, Hiroyuki Fujimori, Masaro Shimbo, Kazuhiko Kashima, Yoshiaki Matsushita, Yoshiro Aiba, Kenro Hayashi, Ryuji Takeda, Hiroshi Shirai, Hiroyuki Saito, Jun‐ichi Matsushita, and Jun Yoshikawa

Appl. Phys. Lett. 67, 3951 (1995); http://dx.doi.org/10.1063/1.114415 (3 pages) | Cited 2 times

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Separation by implanted oxygen silicon wafers have been investigated with cross‐sectional transmission electron microscopy after annealing at 1200 °C in argon as well as in hydrogen. It is observed that the buried oxide has experienced little change in the thickness, which is ascribed to the low hydrogen solubility in the crystal (about 3×1015 cm−3) and provides a natural mark to measure the thickness variation of the top silicon directly. The evaporation rate as determined in this method is less than 0.1 nm/min with an accuracy of ±0.1 nm/min, at least two orders of magnitude lower than reported in previous investigations. © 1995 American Institute of Physics.
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68.35.Md Surface thermodynamics, surface energies
81.65.-b Surface treatments

Quantum transport in sputtered, epitaxial Si/Si1−xGex heterostructures

P. Sutter, D. Groten, E. Müller, M. Lenz, and H. von Känel

Appl. Phys. Lett. 67, 3954 (1995); http://dx.doi.org/10.1063/1.114416 (3 pages) | Cited 3 times

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Radio–frequency magnetron sputter epitaxy was employed for the synthesis of n–type modulation doped Si/Si1−xGex heterostructures. Si channels were grown coherently on sputtered, compositionally graded Si1−xGex buffers of low defect density, and remotely doped with phosphorus by plasma assisted gas phase doping. Magnetotransport measurements on these films revealed Shubnikov–de Haas oscillations in the longitudinal and the integer quantum Hall effect in the transverse magnetoresistance, demonstrating the presence of a two–dimensional electron gas. At T=1.6 K and sheet densities of 1012 cm−2, electron mobilities as high as 15 800 cm2/V s give evidence of the excellent structural and electronic properties achievable by the sputter growth technique. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Atomic structure of the CdTe(001) C(2×2) reconstructed surface: A grazing incidence x‐ray diffraction study

M. B. Veron, M. Sauvage‐Simkin, V. H. Etgens, S. Tatarenko, H. A. Van Der Vegt, and S. Ferrer

Appl. Phys. Lett. 67, 3957 (1995); http://dx.doi.org/10.1063/1.114417 (3 pages) | Cited 20 times

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We present a grazing incidence x‐ray diffraction surface structure determination on a II–VI compound, namely, the CdTe(001) C(2×2) reconstructed surface, grown by molecular beam epitaxy. The structural analysis leads to a model with cadmium bridges corresponding to a coverage of 0.5 ML Cd, as expected from previous studies. This surface arrangement is accompanied by a significant relaxation of the underlying substrate down to the sixth atomic layer. Moreover, a strong anisotropy of the reconstructed domain dimensions is observed and quantified. This findings may explain the anisotropic behavior observed during homoepitaxial and heteroepitaxial growth on CdTe. © 1995 American Institute of Physics.
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61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Symmetric light emitting devices from poly(p‐di ethynylene phenylene) (p‐di phenylene vinylene) derivatives

S. A. Jeglinski, O. Amir, X. Wei, Z. V. Vardeny, J. Shinar, T. Cerkvenik, W. Chen, and T. J. Barton

Appl. Phys. Lett. 67, 3960 (1995); http://dx.doi.org/10.1063/1.114418 (3 pages) | Cited 13 times

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Light emitting devices were fabricated from 2,5‐dialkoxy derivatives of poly(p‐di ethynylene phenylene‐p‐di phenylene vinylene) (PDEPDPV) sandwiched between indium tin oxide (ITO) and Al. The current–voltage (I–V) curve, electroluminescence (EL) intensity‐voltage (IEL–V) curve, and the EL spectra were identical in forward and reverse bias. The I–V curves were also symmetric under illumination, with I≊0 and V=0, suggesting a negligibly small internal electric field. At high bias voltage, carrier injection was found to be dominated by tunneling at the interfaces. At low bias voltage, tunneling among localized states at the Fermi level prevailed. The behavior is discussed in relation to Fermi‐level pinning at defect states in the interfaces with the ITO and Al. © 1995 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
85.60.Jb Light-emitting devices

Intermodulation distortion measurements of a microstrip band‐pass filter made from double‐sided YBa2Cu3Ox films

T. Yoshitake, S. Tahara, and S. Suzuki

Appl. Phys. Lett. 67, 3963 (1995); http://dx.doi.org/10.1063/1.114419 (3 pages) | Cited 15 times

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A microstrip three‐pole band‐pass filter, with a midband frequency of 9.5 GHz and a fractional bandwidth of 2%, has been fabricated using double‐sided YBa2Cu3Ox (YBCO) films on MgO substrates. The nonlinear behavior of this filter was studied by intermodulation distortion measurements. The insertion loss at the midband frequency was less than 0.1 dB and the return loss was better than 15 dB throughout the passband at 55 K. This filter showed relatively high power handling capabilities, with third‐order intercept larger than +60 dBm at 55 K. The third‐order intermodulation distortion products of this filter were found to vary with frequency in the passband, being larger near each of the band edges than at the midband. These increases in the nonlinearity near the band edges are attributed to the increase in the average stored energy in the filter, which is confirmed by the increase in the group delay near the band edge. © 1995 American Institute of Physics.
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84.30.Vn Filters
85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices

Enhancement of the superconducting properties of TlBa2CaCu2O7+δ thin films via postannealing

M. P. Siegal, E. L. Venturini, P. P. Newcomer, B. Morosin, D. L. Overmyer, F. Dominguez, and R. Dunn

Appl. Phys. Lett. 67, 3966 (1995); http://dx.doi.org/10.1063/1.114420 (3 pages) | Cited 14 times

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The superconducting properties of TlBa2CaCu2O7+δ(Tl‐1212) films are greatly enhanced by annealing in unreactive ambients such as nitrogen at temperatures ranging from Ta=250–600 °C. The transition temperature, Tc, of these Tl‐1212 films as‐grown in oxygen is 70 K. Annealing for 1 h at 250 °C elevates Tc above 90 K. Tc further increases and sharpens for Ta=600 °C. In addition, subtle changes occur in the microstructure correlating with improved critical current density. These results indicate that Tl‐1212 films may be of greater relevance for electronics applications than previously believed. © 1995 American Institute of Physics.
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74.25.Sv Critical currents
74.62.-c Transition temperature variations, phase diagrams
74.72.-h Cuprate superconductors

Coulomb blockade and electrical field effect in nanoscale granular microbridges

N. Miura, N. Yoshikawa, and M. Sugahara

Appl. Phys. Lett. 67, 3969 (1995); http://dx.doi.org/10.1063/1.114421 (3 pages) | Cited 2 times

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Nanoscale microbridges made of NbN granular thin films were fabricated by the edge‐defined process. The diameter of NbN grains is ∼8 nm, and the size of the microbridges is ∼50 nm in width and ∼200 nm in length. We have observed a clear Coulomb blockage at 4.2 K in current–voltage characteristics. In order to investigate electrical field effects, a gate electric field was applied to the microbridge. We observed periodic conductance modulations with the gate voltage period of 15–20 V, from which the gate‐grain capacitance is estimated to be 0.01 aF. The experimental results agree with numerical simulation based on the model of a two‐dimensional array of single‐electron‐tunneling junctions. © 1995 American Institute of Physics.
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73.40.Gk Tunneling

Diamond synthesis by capacitively coupled radio frequency plasma with the addition of direct current power

K. K. Chattopadhyay and S. Matsumoto

Appl. Phys. Lett. 67, 3972 (1995); http://dx.doi.org/10.1063/1.114422 (3 pages) | Cited 4 times

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Diamond films were synthesized by using radio frequency (RF) power in a capacitively coupled mode with a parallel plate electrode configuration in which direct current (DC) power was also applied simultaneously. This new plasma method is superior to plain DC plasma chemical vapor deposition (CVD) techniques for diamond deposition since it is very stable and seems readily scaleable. Good quality diamond films were synthesized by this modified plasma CVD method. The effect of variation of both RF and DC parameters on the deposited diamond films is discussed. © 1995 American Institute of Physics.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Novel switching phenomena in ferroelectric Langmuir–Blodgett films

A. Bune, Stephen Ducharme, V. Fridkin, L. Blinov, S. Palto, N. Petukhova, and S. Yudin

Appl. Phys. Lett. 67, 3975 (1995); http://dx.doi.org/10.1063/1.114423 (3 pages) | Cited 44 times

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We have established ferroelectric switching and observed a novel conductance switching phenomenon in ferroelectric polymer films fabricated by the Langmuir–Blodgett technique. The films consist of 10–30 monolayers (ML) of a copolymer of vinylidene fluoride (70%) and trifluoroethylene (30%), exhibiting a first‐order ferroelectric phase transition at 70 °C and nearly rectangular ferroelectric and conductance hysteresis at 24 °C. Ferroelectric switching is accompanied by switching of the conductance by three orders of magnitude. A model describing this switching phenomenon is proposed. © 1995 American Institute of Physics.
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77.80.Fm Switching phenomena
77.84.Jd Polymers; organic compounds

Preparation of homogeneous Cu(InGa)Se2 films by selenization of metal precursors in H2Se atmosphere

M. Marudachalam, H. Hichri, R. Klenk, R. W. Birkmire, W. N. Shafarman, and J. M. Schultz

Appl. Phys. Lett. 67, 3978 (1995); http://dx.doi.org/10.1063/1.114424 (3 pages) | Cited 13 times

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Homogeneous single phase Cu(InGa)Se2 films with Ga/(In+Ga)=0.25–0.75 were formed by reacting Cu–Ga–In precursor films in H2Se followed by an anneal in Ar. X‐ray diffraction and Auger analysis show that the metal precursors reacted only in H2Se were multiphase films having a layered CuInSe2/CuGaSe2 structure. Solar cells made with the multiphase films have properties similar to CuInSe2 devices. Cells made with the annealed single phase films behave like Cu(InGa)Se2 devices with the band gap expected for the precursor composition. © 1995 American Institute of Physics.  
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
84.60.Jt Photoelectric conversion
FREE

Comment on ‘‘Nb/Al–AlOx–Al/Ta/Nb Josephson junctions for x‐ray detection’’ [Appl. Phys. Lett. 66, 511 (1995)]

D. E. Prober

Appl. Phys. Lett. 67, 3981 (1995); http://dx.doi.org/10.1063/1.114425 (1 page)

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Abstract Unavailable
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07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
85.25.Dq Superconducting quantum interference devices (SQUIDs)
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