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17 Jul 1995

Volume 67, Issue 3, pp. 299-444

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Nitrogen depletion during oxidation in N2O

N. S. Saks, D. I. Ma, and W. B. Fowler

Appl. Phys. Lett. 67, 374 (1995); http://dx.doi.org/10.1063/1.114633 (3 pages) | Cited 54 times

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The incorporation of nitrogen in oxides has been studied after furnace oxidation in N2O at 900 °C. We observe that nitrogen is removed from the oxide bulk during oxidation in N2O, while simultaneously nitrogen is incorporated at the growing Si–SiO2 interface. This results suggests that nitrogen incorporation involves a dynamic equilibrium between competing processes which causes both nitrogen incorporation and depletion. A chemical model for nitrogen removal is proposed based on a reaction with NO. Reaction energies, estimated from semiempirical quantum‐mechanical calculations, support the proposed model. © 1995 American Institute of Physics.
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81.65.-b Surface treatments

Direct experimental evidence for trap‐state mediated excitation of Er3+ in silicon

Jung H. Shin, G. N. van den Hoven, and A. Polman

Appl. Phys. Lett. 67, 377 (1995); http://dx.doi.org/10.1063/1.114634 (3 pages) | Cited 28 times

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The time evolution of the 1.54 μm Er3+ photoluminescence intensity of Er‐doped silicon following a 30 μs excitation pulse is investigated. It is found that at 9 K, the 1.54 μm luminescence from Er3+ continues to increase up to 50 μs after the pulse is terminated, when excess photocarriers no longer exist. This provides the first direct experimental evidence that a state in the forbidden gap of silicon acts as the gateway to the excitation of Er3+. Further analysis indicates recombination of bound excitons to be the most likely excitation mechanism. © 1995 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
71.55.Cn Elemental semiconductors

Photoluminescence from wurtzite GaN under hydrostatic pressure

Sangsig Kim, Irving P. Herman, J. A. Tuchman, K. Doverspike, L. B. Rowland, and D. K. Gaskill

Appl. Phys. Lett. 67, 380 (1995); http://dx.doi.org/10.1063/1.114635 (3 pages) | Cited 38 times

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The photoluminescence spectrum of undoped epitaxial wurtzite GaN layers on sapphire was measured for applied hydrostatic pressures up to 73 kbar at 9 K and up to 62 kbar at 300 K. The pressure dependences of the I2 exciton recombination line and the ‘‘yellow’’ band (2.2 eV band at ambient pressure) were examined at 9 and 300 K, and the series of donor‐acceptor‐pair emission lines was analyzed at 9 K. From the I2 lines, it was found that the band gap increases with pressure by 4.4±0.1 meV/kbar at 9 K and 4.7±0.1 meV/kbar at 300 K. © 1995 American Institute of Physics.
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78.55.Cr III-V semiconductors
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Chemical bonding and structure of the sulfur treated GaAs(111)B surface

P. Moriarty, B. Murphy, L. Roberts, A. A. Cafolla, G. Hughes, L. Koenders, P. Bailey, and D. A. Woolf

Appl. Phys. Lett. 67, 383 (1995); http://dx.doi.org/10.1063/1.114636 (3 pages) | Cited 13 times

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We have investigated the atomic structure and chemical bonding present at sulfur exposed GaAs(111)B‐(2×2) surfaces using both scanning tunneling microscopy (STM) and synchrotron radiation core‐level photoemission. Exposure of the (2×2) surface to a molecular beam of sulfur leads to the appearance of a (1×1) low‐energy electron diffraction pattern which becomes increasingly well defined as the sample is annealed. However, at no stage of the annealing process does the surface display an ordered (1×1) ideal termination. Both the photoemission data and STM images show that a large proportion of the As trimer units of the clean (2×2) surface remain after sulfur exposure and annealing to 450 °C with strong evidence of sulfur substituting for As in atomic layers below the surface. The effect of these reactions is to increase the surface band‐bending from that of the clean (2×2) surface. © 1995 American Institute of Physics.
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81.65.-b Surface treatments
68.35.B- Structure of clean surfaces (and surface reconstruction)

Electron temperature in low‐dimensional wires using thermal noise measurements

Ç. Kurdak, D. C. Tsui, S. Parihar, S. A. Lyon, and M. Shayegan

Appl. Phys. Lett. 67, 386 (1995); http://dx.doi.org/10.1063/1.114637 (3 pages) | Cited 3 times

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We have studied electric field heating of low‐dimensional electrons in GaAs/AlGaAs heterostructures at 4.2 K using thermal noise measurements. For the two‐dimensional (2D) wire, the increase in electron temperature, ΔTe, extracted from noise measurements is in agreement with previous measurements of ΔTe and is explained by emission of acoustic and optical phonons. Measurements are extended to quasi‐one‐dimensional (Q1D) wires which are shorter than the 2D wires. In these Q1D wires, we find that for small ΔTe, power dissipation is more effective than in the 2D wires, due to additional energy relaxation through the contacts. This effect is most pronounced in the highest mobility wire where the energy relaxation length is the longest. © 1995 American Institute of Physics.
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73.50.Td Noise processes and phenomena
73.50.Fq High-field and nonlinear effects
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Fast interfacial oxidation of amorphous Si1−xGex:H by SnO2

F. Edelman, R. Brener, C. Cytermann, M. Eizenberg, R. Weil, and W. Beyer

Appl. Phys. Lett. 67, 389 (1995); http://dx.doi.org/10.1063/1.114638 (3 pages) | Cited 6 times

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Fast oxidation of amorphous (a) Si1−xGex:H by interfacial reaction with SnO2 was observed at the temperature range of 400–500 °C. The rate of interfacial oxidation was very significant, while a test in a dry O2 ambient at the same temperatures showed no oxidation of Si1−xGex:H beyond the native oxide. The interfacial reaction of the SiGe:H/SnO2/glass system resulted in a layered structure of silicon oxide, tin oxide, and β‐Sn at the SiGe/SnO2 interface. The extent of the interfacial reaction was found to depend on the Ge content in the Si1−xGex:H films; after annealing, the resultant silicon oxide layer is thicker for the Si‐rich SiGe layer than for the Ge‐rich composition. On the other hand, the SnO2 layer was totally reduced by an a‐Ge:H top layer after a 1 h, 500 °C annealing procedure. © 1995 American Institute of Physics.
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68.35.Md Surface thermodynamics, surface energies
68.35.Fx Diffusion; interface formation

Purely optical measurement of the resistivity distribution of semi‐insulating InP:Fe by means of the photorefractive effect

G. Wittmann and A. Winnacker

Appl. Phys. Lett. 67, 392 (1995); http://dx.doi.org/10.1063/1.114639 (3 pages) | Cited 2 times

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Electrical homogeneity is an essential requirement for semi‐insulating (SI)InP:Fe wafers. A method is presented to measure the spatial distribution of resistivity at room temperature via the photorefractive effect. The experimental conditions are presented and discussed. The potential of the method is demonstrated by applying it to SI liquid encapsulated Czochralski grown material. © 1995 American Institute of Physics.
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72.80.Ey III-V and II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Large photoinduced persistent optical absorption in selenium doped AlSb

P. Becla, A. Witt, J. Lagowski, and W. Walukiewicz

Appl. Phys. Lett. 67, 395 (1995); http://dx.doi.org/10.1063/1.114640 (3 pages) | Cited 11 times

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Low‐temperature, T<90 K, illumination transfers transparent, single crystals of AlSb doped with Se to a metastable state characterized by a high optical absorption approaching 200 cm−1. The enhanced absorption spectrum extends from 0.1 to 1.5 eV and consists of a double band structure with peaks at 0.2 and 0.5 eV. It is induced by photons with a threshold energy of about 1 eV. It is persistent, i.e., it shows no measurable decay after switching off the excitation. The low absorption state is thermally recovered at 100 K. The persistent absorption is a manifestation of a DX‐type bi‐stability of the Se donor. The 0.2 and 0.5 bands are, respectively, due to the photoionization of electrons from the metastable hydrogenic donor level to X1 and X3 conduction band minima. A large binding energy of the Se donor is essential for the observation of persistent absorption and a lack of any free‐electron related effects. © 1995 American Institute of Physics.
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71.55.Eq III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
72.40.+w Photoconduction and photovoltaic effects

Oxidation enhanced diffusion of Si in GaAs: The effect of excess As on diffusion depth and carrier concentration

Robert C. Keller and C. R. Helms

Appl. Phys. Lett. 67, 398 (1995); http://dx.doi.org/10.1063/1.114641 (3 pages) | Cited 3 times

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An investigation of the fast diffusion of Si in GaAs from deposited surface layers oxidized in an Ar/H2O ambient indicates excess As, formed by oxidation of Ga originating from the substrate, is responsible for the enhanced diffusion of Si into the substrate. The formation of the SiO2 on the surface during oxidation prevents loss of the excess As, which accumulates in the remaining Si film. Higher H2O partial pressures during the oxidation produce higher As/Si ratios, resulting in an increase in the Si diffusion depth and concentration. However, the n‐type carrier concentration decreases with higher As/Si ratios in the remaining Si layer. A second, nonoxidizing anneal on samples with the SiO2 and Si layer removed produced different effects on the carrier concentration, depending on whether As was free to escape from the substrate. The results indicate that excess As related defects such as gallium vacancies are probably responsible for the n‐type compensation in the fast diffused samples. © 1995 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
66.30.J- Diffusion of impurities

GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers

T. Warren Weeks, Michael D. Bremser, K. Shawn Ailey, Eric Carlson, William G. Perry, and Robert F. Davis

Appl. Phys. Lett. 67, 401 (1995); http://dx.doi.org/10.1063/1.114642 (3 pages) | Cited 132 times

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Monocrystalline GaN(0001) thin films, void of oriented domain structures and associated low‐angle grain boundaries, have been grown via organometallic vapor phase epitaxy (OMVPE) on high‐temperature monocrystalline AlN(0001) buffer layers predeposited on vicinal α(6H)–SiC(0001) wafers using TEG, TEA, and ammonia in a cold wall, vertical, pancake‐style reactor. The surface morphology was smooth, and the PL spectrum showed strong near‐band‐edge emission with a full width at half‐maximum (FWHM) value of 4 meV. The dislocation density within the first 0.5 μm was ≊1×109 cm−2; it decreased substantially with increasing film thickness. Controlled n‐type Si doping of GaN has been achieved for net carrier concentrations ranging from ∼1×1017 to 1×1020 cm−3. Double‐crystal XRC measurements indicated a FWHM value of 66 arcsec for the GaN(0004) reflection. © 1995 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Observation of the anomalous current–voltage characteristics of GaAs/n+‐InGaAs/GaAs doped‐channel structure

Wen‐Chau Liu, Lih‐Wen Laih, Jung‐Hui Tsai, Wei‐Chou Hsu, Cheng‐Zu Wu, Kong‐Beng Thei, and Wen‐Shiung Lour

Appl. Phys. Lett. 67, 404 (1995); http://dx.doi.org/10.1063/1.114643 (3 pages) | Cited 2 times

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A GaAs/n+‐In0.2Ga0.8As/GaAs doped‐channel field‐effect transistor structure has been fabricated and studied. A typical transistor performance with a threshold voltage of about −3.0 V and transconductance of up to 160 mS/mm is obtained in the lower gate‐source voltage (VGS <−1.0 V) regime. However, for some devices, the three‐terminal‐controlled N‐shaped negative‐differential‐resistance (NDR) behavior is observed at the saturation regime of current–voltage characteristics under higher gate‐source bias (VGS≥−1.0 V) condition. The interesting NDR phenomenon is believed to be attributed to the real‐space transfer and deep‐level electron trapping effect. © 1995 American Institute of Physics.
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85.30.Tv Field effect devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Growth and characterization of an epitaxially grown ZnSSe/MnZnSSe distributed Bragg reflector

A. Salokatve, K. Rakennus, P. Uusimaa, M. Pessa, T. Aherne, J. P. Doran, J. O’Gorman, and J. Hegarty

Appl. Phys. Lett. 67, 407 (1995); http://dx.doi.org/10.1063/1.114644 (3 pages) | Cited 8 times

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A Bragg reflector consisting of a 25‐period MnZnSSe/ZnSSE Bragg stack is reported. The II–VI semiconductor structure was grown by molecular beam epitaxy on a GaAs (100) epilayer. Structural characterization of the Bragg reflector was performed with double crystal x‐ray diffraction and transmission electron microscopy. These studies indicated that the epitaxial II–VI structure, whose total thickness is about 2150 nm, remains pseudomorphic with the GaAs substrate. The Bragg stack has a maximum reflectance of 81% at 468 nm. This result shows that fabrication of high reflectance mirrors from epitaxial ZnSe‐based II–VI compounds is possible in spite of relatively small refractive index differences between constituent II–VI layers. © 1995 American Institute of Physics.
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42.79.Bh Lenses, prisms and mirrors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology

Microstructure of GaN epitaxy on SiC using AlN buffer layers

F. A. Ponce, B. S. Krusor, J. S. Major, W. E. Plano, and D. F. Welch

Appl. Phys. Lett. 67, 410 (1995); http://dx.doi.org/10.1063/1.114645 (3 pages) | Cited 95 times

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The crystalline structure of GaN epilayers on (0001) SiC substrates has been studied using x‐ray diffraction and transmission microscopy. The films were grown by metalorganic chemical vapor deposition, using AlN buffer layers. X‐ray diffraction measurements show negligible strain in the epilayer, and a long‐range variation in orientation. Transmission electron lattice images show that the AlN buffer layer consists of small crystallites. The nature of the buffer layer and its interfaces with the substrate and the GaN film is discussed. The defect structure of the GaN film away from the substrate consists mostly of threading dislocations with a density of ∼109 cm−2. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Hole dominated transport in InGaAs metal semiconductor metal photodetectors

Marian Hargis, Stephen E. Ralph, Jerry Woodall, and Dave McInturff

Appl. Phys. Lett. 67, 413 (1995); http://dx.doi.org/10.1063/1.114646 (3 pages) | Cited 2 times

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We report the direct measurement of the intrinsic photocurrent response of both top and back illuminated planar metal–semiconductor–metal structures. We directly observe the temporal dynamics of the hole transport dependence on applied bias and the initial spatial distribution using a near infrared tunable femtosecond light source and electrically biased structures. The increased hole transit time of back illuminated structures can be completely understood in terms of the hole velocity and the initial spatial distribution of the carriers. Additionally, we report the fastest directly measured 50 μm diameter InGaAs photodetector with a 26 ps full width at half maximum. © 1995 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.50.Pz Photoconduction and photovoltaic effects
73.40.Sx Metal-semiconductor-metal structures

Gettering of Au to dislocations and cavities in silicon

J. Wong‐Leung, E. Nygren, and J. S. Williams

Appl. Phys. Lett. 67, 416 (1995); http://dx.doi.org/10.1063/1.114647 (3 pages) | Cited 50 times

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The gettering of ion implanted Au to defects in Si has been studied using Rutherford backscattering and channeling and transmission electron microscopy. Damage from a Si implant anneals into dislocations which can efficiently trap diffusing Au. The damage introduced by a H implant evolves during annealing into cavities which getter close to 100% of the Au, leaving very little Au in solution. This process is driven by the diffusion of a supersaturated solid solution of Au to a favorable sink. The internal surfaces of cavities are the most favorable sink, followed by dislocations and then the Si surface. © 1995 American Institute of Physics.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.uf Ge and Si
61.72.Yx Interaction between different crystal defects; gettering effect
61.80.Jh Ion radiation effects

Size effect in hard superconductors at unilateral excitation

F. Pérez‐Rodríguez, N. M. Makarov, V. A. Yampol’skii, I. O. Lyubimova, and O. I. Lyubimov

Appl. Phys. Lett. 67, 419 (1995); http://dx.doi.org/10.1063/1.114648 (3 pages) | Cited 5 times

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It is shown that size effect plays an important role in the ac response of hard superconductors not only at bilateral but at unilateral excitation as well. This effect manifests itself in the ac amplitude dependences of the surface impedance and absorptivity. We find that the absorptivity of a superconductor has always a prominent maximum independently of the dielectric properties of the substrate. This statement is demonstrated by theoretical calculations performed within the critical state model. © 1995 American Institute of Physics.
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74.25.N- Response to electromagnetic fields
74.25.Sv Critical currents
74.78.-w Superconducting films and low-dimensional structures

Precipitation of superconducting, single phase EuBa2Cu4O8 from molten hydroxide at 475 °C

David Sandford, Linda N. Marquez, and Angelica M. Stacy

Appl. Phys. Lett. 67, 422 (1995); http://dx.doi.org/10.1063/1.114619 (2 pages) | Cited 8 times

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A solution route involving reactive precipitation from molten hydroxide melts is presented for the synthesis of EuBa2Cu4O8. The melt consisted of a mixture of NaOH, KOH, and Ba(OH)2, and was heated at 475 °C for ∼2 h prior to reactant addition. Eu2O3 and CuO were then added, and in several hours crystallites of EuBa2Cu4O8 were obtained. The product was a single phase as determined by powder x‐ray diffraction and the onset of superconductivity was observed at 78 K by dc magnetic susceptibility. © 1995 American Institute of Physics.
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81.10.Fq Growth from melts; zone melting and refining
74.72.-h Cuprate superconductors

Performance limitations of niobium‐based submillimeter‐wave quasiparticle mixers operating near the gap frequency

P. Febvre, M. Salez, W. R. McGrath, B. Bumble, and H. G. LeDuc

Appl. Phys. Lett. 67, 424 (1995); http://dx.doi.org/10.1063/1.114620 (3 pages) | Cited 2 times

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We have measured the noise temperature of heterodyne receivers employing Nb/AlOx/Nb tunnel junction mixers at frequencies ranging from 70% to 93% of the gap frequency of niobium (∼700 GHz). The sensitivity of the receiver is decreased by the overlap of the n=1 and n=2 photon steps of opposite sign. At bias voltages where these photon steps overlap, there is an increase in receiver noise up to 50%. Theoretical calculations using the Tucker theory agree well with the observed mixer performance. This overlap already affects the receiver operation for best performance at frequencies well below 700 GHz. © 1995 American Institute of Physics.
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74.40.-n Fluctuation phenomena
85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices

Ferromagnetic resonance and magnetic disaccommodation of Ti‐doped single crystal lithium ferrites

A. G. Flores, L. Torres, M. Zazo, V. Raposo, and J. Iñiguez

Appl. Phys. Lett. 67, 427 (1995); http://dx.doi.org/10.1063/1.114621 (3 pages) | Cited 5 times

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Disaccommodation and ferromagnetic resonance measurements for single crystal titanium‐doped lithium ferrites are presented. Magnetic disaccommodation is performed at 1 kHz from 77 to 400 K while ferromagnetic resonance is carried out at 11 GHz from 77 to 300 K. Ferromagnetic resonance line shape asymmetry and anisotropy field data are also shown. A relationship between the asymmetry and the disaccommodation spectra is suggested. © 1995 American Institute of Physics.
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75.50.Dd Nonmetallic ferromagnetic materials
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
75.60.-d Domain effects, magnetization curves, and hysteresis

Growth and characterization studies of Fe4N thin films prepared by ion beam assisted evaporation

H. Chatbi, M. Vergnat, Ph. Bauer, and G. Marchal

Appl. Phys. Lett. 67, 430 (1995); http://dx.doi.org/10.1063/1.114622 (3 pages) | Cited 8 times

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Thin films of iron nitrides have been prepared using an ion beam assisted evaporation method. X‐ray diffraction and Mössbauer spectrometry show that the films generally consist in a mixture of Fe and Fe4N phases. For high source powers and temperatures higher than 300 °C it was possible to obtain the pure Fe4N phase. © 1995 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology

Reciprocity in magnetic force microscopy

C. D. Wright and E. W. Hill

Appl. Phys. Lett. 67, 433 (1995); http://dx.doi.org/10.1063/1.114623 (3 pages) | Cited 22 times

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A theoretical treatment for contrast formation in the magnetic force microscope is given which relies on calculation of the force acting on the sample, rather than the more usual method which calculates the force acting on the microscope tip. The equivalence of this reciprocal force method is demonstrated by calculating the theoretical image for longitudinal step and arctangent magnetization transitions in thin‐film recording media. The reciprocal force approach leads naturally to unambiguous definitions for the resolution of the magnetic force microscope and it is shown that conventional resolution measures, such as impulse response, line‐spread function and step response, used in many other forms of microscopy, may be readily applied to the magnetic force microscope. © 1995 American Institute of Physics.
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07.79.Pk Magnetic force microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

64 meV measured energy dispersion from cold field emission nanotips

S. T. Purcell, Vu Thien Binh, and N. Garcia

Appl. Phys. Lett. 67, 436 (1995); http://dx.doi.org/10.1063/1.114624 (3 pages) | Cited 7 times

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In this letter, we report on the extremely narrow energy distributions that can be obtained in field emission from W and Pt nanotips. For example, the measured full width at half‐maximum for a Pt nanotip can be as low as 64 meV at 80 K and 100 meV at room temperature. Moreover, these emitted beams are autocollimated to a 4° opening and have hours of stability for a current of ∼1 nA due to the fact that the emission comes from one atom. © 1995 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
41.75.Fr Electron and positron beams

Cluster interactions and stress evolution during electromigration in confined metal interconnects

Dirk D. Brown, John E. Sanchez, M. A. Korhonen, and Che‐Yu Li

Appl. Phys. Lett. 67, 439 (1995); http://dx.doi.org/10.1063/1.114625 (3 pages) | Cited 13 times

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In narrow metal interconnects used in advanced integrated circuits, electromigration flux divergences occur at the intersection between polycrystalline cluster segments (where grain boundaries offer a fast diffusion path), and bamboo segments (where there are no grain boundaries along the line length). In confined, passivated metal interconnects, these flux divergences are linked to the evolution of significant mechanical stresses in the metal. A quasisteady state stress distribution builds up quickly in the cluster segments and remains unchanged until the stress profiles between cluster segments begin to overlap, and the clusters begin to ‘‘interact.’’ A significant increase in stress above the quasisteady state can result from cluster interactions, increasing the potential for electromigration and stress‐induced damage. If the cluster separation is small, this stress increase can occur on a time scale which is short compared to the stress evolution of the interconnect line as a whole. © 1995 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
85.40.Qx Microcircuit quality, noise, performance, and failure analysis

Effects of an electric field on the static friction of a metal on a ferroelectric material

Takatoshi Seto

Appl. Phys. Lett. 67, 442 (1995); http://dx.doi.org/10.1063/1.114626 (2 pages) | Cited 1 time

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We investigated the static friction of a metal placed on ferroelectrics when an alternating current (ac) electric field was applied. Specifically, we studied the angle at which a stainless‐steel disc placed on a lead zirconate titanate (PZT) plate begins to slide, namely, the friction angle. It was found that under a constant voltage the friction angle increased as the frequency of the applied voltage was increased. A time dependency of the static friction coefficient on electrostatic force was discussed. © 1995 American Institute of Physics.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
FREE

Erratum: ‘‘Novel semiconductor substrate formed by hydrogen ion implantation into silicon’’ [Appl. Phys. Lett. 55, 2223 (1989)]

Jianming Li

Appl. Phys. Lett. 67, 444 (1995); http://dx.doi.org/10.1063/1.115558 (1 page) | Cited 3 times

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Abstract Unavailable
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61.72.uf Ge and Si
72.80.Cw Elemental semiconductors
85.40.Hp Lithography, masks and pattern transfer
99.10.Cd Errata
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