APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

24 Jul 1995

Volume 67, Issue 4, pp. 449-574

Page 1 of 2 Pages Next Page | Jump to Page

1.5 μm wavelength compressively strained GaInAs/AlGaInAs multiquantum‐well lasers grown by molecular‐beam epitaxy with high differential gain and low threshold current density

H. Shimizu, T. Fukushima, K. Nishikata, Y. Hirayama, and M. Irikawa

Appl. Phys. Lett. 67, 449 (1995); http://dx.doi.org/10.1063/1.114532 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
1.5 μm GaInAs/AlGaInAs multiquantum‐well (MQW) lasers with 1% compressively strained quantum wells were grown by molecular‐beam epitaxy. The effective differential gain (g0) determined from the squared relaxation oscillation frequency versus output power relations is a high value of 9.3×10−16 cm2 in long‐wavelength lasers. On the other hand, the effective transparent carrier density (n0) of strained‐layer MQW lasers determined from the measurement of the spontaneous carrier lifetime was found to be very high, which is different from the theory of strain effects. However, by taking the carrier transport effect into account, it was shown that (1) for the strained MQW lasers the intrinsic transparent carrier density is lower than that of the lattice‐matched MQW lasers, and (2) the intrinsic value of g0 is estimated to be 28–56×10−16 cm2, which is close to the theoretically predicted value. By improving the laser structure to have better carrier transport, much higher effective differential gain and lower effective transparent carrier density can be expected. © 1995 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Surface mode coupling in GaAs/AlGaAs laser diodes—A novel concept for a single laser mode emission

A. Köck, S. Freisleben, C. Gmachl, E. Gornik, M. Rosenberger, L. Korte, and P. L. de Souza

Appl. Phys. Lett. 67, 452 (1995); http://dx.doi.org/10.1063/1.114533 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
We demonstrate a novel concept for a mode selection mechanism in surface emitting laser diodes. This concept is based on a strong coupling process between the laser mode and a surface mode on top of the laser diode. The mode selection mechanism is the result of a strong feedback from the surface mode into the laser diode. Nearly single‐modelike emission spectra are achieved from surface emitting GaAs/AlGaAs laser diodes and qualitatively explained by a model based on ray optics. The main advantage of this type of laser diode is its simple fabrication and the possibility of adjusting the desired wavelength independent of the growth process by external technological parameters. © 1995 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Transient behavior of photorefractive gratings in a polymer

G. G. Malliaras, V. V. Krasnikov, H. J. Bolink, and G. Hadziioannou

Appl. Phys. Lett. 67, 455 (1995); http://dx.doi.org/10.1063/1.114534 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
The transient behavior of photorefractive gratings in the polymer composite poly(N‐vinyl carbazole) (PVK), 2,4,7‐trinitro‐9‐fluorenone (TNF), and N,N‐diethyl‐para‐nitroaniline (EPNA) doped with various amounts of 4‐(diethylamino)benzaldehyde diphenylhydrazone (DEH) is presented. The influence on the hole drift mobility due to the change in the trap density induced by DEH, was directly measured. © 1995 American Institute of Physics.
Show PACS
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Jk Polymers and organics
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.20.Jq Electro-optical effects

Wavelength dependence of two‐beam coupling gain coefficients of BaTiO3:Ce crystals

Jiasen Zhang, S. X. Dou, Hong Gao, Yong Zhu, and Peixian Ye

Appl. Phys. Lett. 67, 458 (1995); http://dx.doi.org/10.1063/1.114535 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Two‐beam coupling gain coefficients of transmission and reflection gratings in BaTiO3:Ce crystals versus wavelength between 570 and 680 nm have been measured. The former decreases more quickly than predicted by theory. The latter was found to vary significantly with wavelength, while theory shows that it should vary little. In order to explain the experimental results we assumed that the effective carrier number density Neff depends on wavelength. By calculating Neff from the measured results we found that Neff is approximately a linearly decreasing function of wavelength. The slopes and intercepts for the linear functions are given for the two crystals studied. © 1995 American Institute of Physics.
Show PACS
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Complex‐coupled distributed feedback laser with negative differential coupling

Brian E. Kruschwitz and T. G. Brown

Appl. Phys. Lett. 67, 461 (1995); http://dx.doi.org/10.1063/1.114536 (3 pages)

Full Text: | Download PDF

Show Abstract
A novel mechanism for creating a periodic gain is presented which can be used in the design of complex‐coupled distributed feedback semiconductor lasers. A one‐dimensional longitudinal analysis shows that this gain‐coupling mechanism is characterized by negative differential coupling, which earlier reports have shown can offer the most significant reduction in the linewidth enhancement factor. A linewidth analysis predicts that the linewidth enhancement factor can be reduced by about a factor of 2 because of the negative differential coupling. © 1995 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Dynamics of low‐pressure gain‐switched iodine lasers

J. Nicholson, W. Rudolph, J. McIver, R. Tate, and G. Hager

Appl. Phys. Lett. 67, 464 (1995); http://dx.doi.org/10.1063/1.114537 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
The dynamics of gain‐switched, low‐pressure photolytic iodine lasers were investigated experimentally and theoretically as a function of pressure and buffer gas. The behavior of the pulse shape, build‐up, and duration can be explained by relaxation from a nonthermalized to a thermalized velocity distribution of the gas. © 1995 American Institute of Physics.  
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.-v Laser optical systems: design and operation

On distributed microwave effects in semiconductor lasers and their practical implications

Bin Wu, John B. Georges, David M. Cutrer, and Kam Y. Lau

Appl. Phys. Lett. 67, 467 (1995); http://dx.doi.org/10.1063/1.114538 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Recently, it has been shown that when a semiconductor laser is directly modulated at high frequencies, the modulation signals suffer substantial loss and phase shift propagating from the wire feed point along the length of the laser. It was suggested that these distributed microwave effects lead to a further bandwidth degradation in electrical current injection over the single‐pole roll‐off predicted by a lumped RC model. We show, however, that this degradation is significant only when the laser is driven directly by a voltage source. In contrast, when the laser is driven, commonly, through a 50 Ω transmission line the degradation is minimal, and the total injection current is still RC limited. © 1995 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

1.7 μm excited state absorption measurement in erbium‐doped glasses

José E. Román, Martin Hempstead, Chenchun Ye, Salim Nouh, Patrice Camy, Pascale Laborde, and Christian Lerminiaux

Appl. Phys. Lett. 67, 470 (1995); http://dx.doi.org/10.1063/1.114539 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
We have measured the complete 1.7 μm excited state absorption (ESA) spectrum in erbium‐doped glasses. The spectrum is obtained by measuring the gain of an erbium‐doped waveguide in the 1400–1800 nm region. Using the measured spectra, we estimate the 1.5 μm uniform upconversion rate by calculating the spectral overlap between the 1.5 μm emission and 1.7 μm ESA cross sections. The technique is applied to erbium‐doped, ion‐exchangeable silicate glasses yielding upconversion constants in the range of 1–10×10−18 cm3/s. © 1995 American Institute of Physics.
Show PACS
42.70.Ce Glasses, quartz
42.79.Gn Optical waveguides and couplers
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics

Effect of electrode material on measured ion energy distributions in radio‐frequency discharges

J. K. Olthoff, R. J. Van Brunt, and S. B. Radovanov

Appl. Phys. Lett. 67, 473 (1995); http://dx.doi.org/10.1063/1.114540 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
Evidence is presented for a significant influence of electrode surface material and condition on the measurement of the kinetic energies of ions sampled from discharges through an orifice in the electrode. Significant differences in ion energy shifts and/or discrimination of low‐energy ions are found using aluminum and stainless‐steel electrodes in a radio‐frequency (rf) discharge cell. It is argued that the observed differences in energy shifts may be attributable in part to differences in charging of oxide layers on the electrode surface around the sampling orifice. © 1995 American Institute of Physics.
Show PACS
52.80.Pi High-frequency and RF discharges
52.70.Nc Particle measurements
52.40.Hf Plasma-material interactions; boundary layer effects

Scanning polarization force microscopy: A technique for imaging liquids and weakly adsorbed layers

Jun Hu, Xu‐Dong Xiao, and Miquel Salmeron

Appl. Phys. Lett. 67, 476 (1995); http://dx.doi.org/10.1063/1.114541 (3 pages) | Cited 81 times

Full Text: | Download PDF

Show Abstract
The atomic force microscope is used to measure dielectric polarization forces on surfaces induced by a charged tip. On insulators, the major contribution to the surface polarizability at low frequencies is from surface ions. The mobility of these ions depends strongly on the humidity. Using polarization forces we have been able to image liquid films, droplets, and other weakly adsorbed material. © 1995 American Institute of Physics.
Show PACS
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
07.79.Lh Atomic force microscopes
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.15.+e Liquid thin films

Thermal stability of the midgap acceptor rhodium in indium phosphide

A. Näser, A. Dadgar, M. Kuttler, R. Heitz, D. Bimberg, J. Y. Hyeon, and H. Schumann

Appl. Phys. Lett. 67, 479 (1995); http://dx.doi.org/10.1063/1.114542 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
We investigated the thermally induced redistribution of Rh in low pressure MOCVD grown InP structures by means of secondary‐ion‐mass‐spectroscopy. Analogous measurements for InP:Fe structures serve as reference. On alternately Rh‐doped/undoped InP structures an upper limit for the diffusion coefficient of DRh(800 °C)≤1×10−14 cm2/s is established much smaller than DFe(750 °C)=1×10−11 cm2/s. No exchange reactions are observed at the interface of p‐InP/InP:Rh structures. Only Rh implanted into InP shows defect induced redistribution into amorphous areas. Rh is superior to Fe as far as thermal stability is concerned. © 1995 American Institute of Physics.
Show PACS
66.30.J- Diffusion of impurities
61.72.uj III-V and II-VI semiconductors

Dose loss in phosphorus implants due to transient diffusion and interface segregation

P. B. Griffin, S. W. Crowder, and J. M. Knight

Appl. Phys. Lett. 67, 482 (1995); http://dx.doi.org/10.1063/1.114543 (3 pages) | Cited 32 times

Full Text: | Download PDF

Show Abstract
For implanted phosphorus in the dose range of 5×1013/cm2–4×1014/cm2, up to half the implanted dose may be lost during low thermal budget anneals due to transient diffusion and anomalous segregation at the Si–SiO2 interface. The phosphorus atoms, rendered mobile by the implant damage, stick in the oxide near the interface where they are electrically inactive and can be removed by stripping the surface oxide. Such a dose loss needs to be accounted for in a typical device fabrication process. © 1995 American Institute of Physics.
Show PACS
66.30.J- Diffusion of impurities
61.72.uf Ge and Si
85.40.Hp Lithography, masks and pattern transfer

Pulsed laser deposition of diamond from graphite targets

M. C. Polo, J. Cifre, G. Sánchez, R. Aguiar, M. Varela, and J. Esteve

Appl. Phys. Lett. 67, 485 (1995); http://dx.doi.org/10.1063/1.114544 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
Diamond crystals of 1 μm mean size were grown on (100) silicon substrates by ArF (193 nm) laser ablation of graphite in a hydrogen atmosphere with a laser power density of 1.3×108 W/cm2 at relatively low substrate temperature (450 °C). Raman spectroscopy analysis confirmed the diamond cubic structure of the crystals by the presence of a sharp peak at 1332 cm−1. When a KrF (248 nm) laser was used instead of the ArF no diamond phases were detected in the deposited films and the Raman spectra showed only the two bands centered at 1340 and 1600 cm−1 characteristic of amorphous carbon. The results demonstrated that the laser wavelength is a determinant parameter in the growth of diamond by laser ablation of graphite. © 1995 American Institute of Physics.
Show PACS
81.15.Fg Pulsed laser ablation deposition
68.55.-a Thin film structure and morphology
78.30.Hv Other nonmetallic inorganics

Catastrophic degradation lines at the facet of InGaAsP/InP lasers investigated by transmission electron microscopy

C. W. Snyder, J. W. Lee, R. Hull, and R. A. Logan

Appl. Phys. Lett. 67, 488 (1995); http://dx.doi.org/10.1063/1.114545 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
Material transformations occurring at the facets of optically ‘‘stressed’’ planar InGaAsP/InP diode lasers have been investigated by transmission electron microscopy and energy dispersive x‐ray spectroscopy. Catastrophic degradation lines (CDLs) which are characteristic of catastrophic optical damage are observed for optical power densities ∼107 W/cm2. Analysis of the microstructure reveals a series of 150 nm wide GaAs‐rich tracks and the formation of unique void/InGa‐rich precipitate pairs within the InGaAsP active layer. These observations suggest that the formation of local group III‐rich regions is the first stage in the formation of CDLs. Subsequently, the strong absorption of the impinging laser beam leads to propagation of an InGa‐rich melt, thereby producing the GaAs‐rich tracks through a process similar to liquid phase epitaxy. These results are discussed in the context of standard physical models for CDLs. © 1995 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.Cc Kinetics of defect formation and annealing

Characterization of plasma beam deposited amorphous hydrogenated silicon

R. J. Severens, G. J. H. Brussaard, M. C. M. van de Sanden, and D. C. Schram

Appl. Phys. Lett. 67, 491 (1995); http://dx.doi.org/10.1063/1.114546 (3 pages) | Cited 29 times

Full Text: | Download PDF

Show Abstract
Fourier transform infrared spectrometry, visual transmission spectroscopy, and in situ ellipsometry have been performed on plasma beam deposited (PBD) amorphous hydrogenated silicon layers. From these measurements refractive index at infrared wavelengths and at 632.8 nm, the optical band gap and the hydrogen content of the layers have been determined. The hydrogen concentration of the layers varies between ∼9 and 25 at. %. It was found that the refractive index decreases more with hydrogen concentration in the layer than predicted by theoretical calculations assuming tetrahedral structures. The band gap of the material remains constant at ∼1.72 eV for the range of hydrogen contents measured. The resonance frequency of the SiH stretching mode (around 2000 cm−1) increases with increased hydrogen content. This is additional evidence to support the assumption that clustered SiH (SiH on voids) does not have its stretching mode near the 2100 cm−1 SiH2 peak. From the results presented it is concluded that PBD layers show behavior similar to plasma enhanced chemical vapor deposition layers with respect to the hydrogen content in the layers. © 1995 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
78.66.Jg Amorphous semiconductors; glasses

Silicon surface tunnel transistor

William M. Reddick and Gehan A. J. Amaratunga

Appl. Phys. Lett. 67, 494 (1995); http://dx.doi.org/10.1063/1.114547 (3 pages) | Cited 46 times

Full Text: | Download PDF

Show Abstract
A silicon surface tunneling transistor structure, based on lateral band‐to‐band tunneling, is presented. The theory, fabrication, and operation of the device is described. Band‐to‐band tunneling is controlled by the bias on the gate of the device which modulates the width of the tunneling barrier. The operation of the device is confirmed in both experimental results and two‐dimensional computer simulations. Dramatic differences in drain current are observed for different gate bias. © 1995 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Impurity‐free layer disordering in p‐i‐n and n‐i‐p AlGaAs‐GaAs multiple quantum well device structures: The Fermi level effect revisited

S. Seshadri, L. J. Guido, and P. Mitev

Appl. Phys. Lett. 67, 497 (1995); http://dx.doi.org/10.1063/1.114548 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
Spatially resolved values of the Al‐Ga interdiffusion coefficient for p‐i‐n and n‐i‐p AlGaAs‐GaAs device structures are found to be nearly identical in magnitude, but to vary with position by a factor of 2 across a 1 μm thick multiple quantum well active region. These observations are in marked contrast with theoretical predictions given that the Fermi level to valence‐band energy separation changes by 0.7 eV across the intrinsic region and suggest that impurity‐free layer disordering does not provide the necessary uniformity in energy shift for photonic integrated circuit fabrication in its present state of development. © 1995 American Institute of Physics.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
66.30.J- Diffusion of impurities
68.55.-a Thin film structure and morphology

Thermal oxidation kinetics of (100) and (111) silicon in nitrous oxide

Renzo C. De Meo and T. P. Chow

Appl. Phys. Lett. 67, 500 (1995); http://dx.doi.org/10.1063/1.114549 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Thermal oxidation of (100) and (111) silicon (Si) in a nitrous oxide (N2O) ambient has been studied. The oxidation rate follows a parabolic to linear behavior. The activation energies in the parabolic regime were found to be 2.02 and 1.54 eV/molecule for (100) and (111) Si, respectively. The activation energy for the linear rate constant is estimated to be 1.61 and 1.37 eV/molecule for (100) and (111) Si, respectively. The limiting mechanism for the parabolic regime is attributed to the diffusion of oxidant through a surface oxynitride layer. The gradual shift to linear behavior is unusual and is in direct contrast with the Grove–Deal model [J. Appl. Phys. 36, 3770 (1965)]. Finally, secondary ion mass spectrometry shows a temperature dependent distribution and concentration of nitrogen at the interface. © 1995 American Institute of Physics.
Show PACS
81.65.-b Surface treatments

Quantum‐confined Stark effect in ZnSe/Zn1−xCdxSe quantum wells

S. W. Short, S. H. Xin, A. Yin, H. Luo, M. Dobrowolska, and J. K. Furdyna

Appl. Phys. Lett. 67, 503 (1995); http://dx.doi.org/10.1063/1.114550 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
We report the observation of the quantum‐confined Stark effect (QCSE) in the photoluminescence (PL) of ZnSe/ZnCdSe single quantum wells grown by molecular beam epitaxy. The electric field was applied via a reverse‐biased Schottky barrier contact. Red shifts of the PL peak as large as 13 meV were detected, and accompanied by a dramatic reduction in the transition intensity, consistent with the QCSE. Even moderate applied voltages (∼5 V) were sufficient to completely quench the luminescence signal. © 1995 American Institute of Physics.
Show PACS
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Tunable, long‐wavelength PtSi/SiGe/Si Schottky diode infrared detectors

J. R. Jimenez, X. Xiao, J. C. Sturm, and P. W. Pellegrini

Appl. Phys. Lett. 67, 506 (1995); http://dx.doi.org/10.1063/1.114551 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
We have fabricated p‐type PtSi/SiGe/Si Schottky diodes with barrier heights (from photoresponse) that are lowered (relative to PtSi/Si) and highly dependent on the applied bias. The variability in the barrier height is obtained by using the SiGe/Si valence band offset as an additional barrier. When placed in close proximity to the PtSi/SiGe Schottky barrier, the total effective barrier can be altered dramatically by adjusting the applied reverse bias. The voltage sensitivity of the total barrier height can be controlled by the SiGe layer thickness. The voltage‐variable barrier heights range, for example, from 0.30 eV at zero bias to 0.12 eV at 2.4 V reverse bias for a 20%, 450 Å thick SiGe layer. This lowest barrier height corresponds to a cutoff wavelength of 10 μm, extending the detection range of PtSi infrared detectors to the long‐wavelength range. The quantum efficiency coefficients C1 are normal at this long‐wavelength end, but reduced over the rest of the tunable range, because hot carriers have to traverse the entire SiGe thickness in order to be detected. The hot carriers’ energy losses from quasielastic scattering in the SiGe are taken into account in a theoretical model that gives good agreement with data. © 1995 American Institute of Physics.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Low‐temperature‐processed (150–175 °C) Ge/Pd‐based Ohmic contacts (ρc∼1×10−6 Ω cm2) to n‐GaAs

L. C. Wang, P. H. Hao, and B. J. Wu

Appl. Phys. Lett. 67, 509 (1995); http://dx.doi.org/10.1063/1.114552 (3 pages) | Cited 19 times

Full Text: | Download PDF

Show Abstract
We have developed low resistance (ρc∼1×10−6 Ω cm2) Ge/Pd‐based (the Au/Ge/Pd and the Ag/Ge/Pd contacts) Ohmic contact schemes processed at temperatures 150–175 °C to n‐GaAs (n∼1×1018 cm−3). The Ohmic contact formation mechanism can be rationalized in terms of the solid phase regrowth (SPR) principle and the interdiffusion between Au (or Ag) and Ge. © 1995 American Institute of Physics.
Show PACS
73.40.Cg Contact resistance, contact potential
81.15.Np Solid phase epitaxy; growth from solid phases
73.40.Ns Metal-nonmetal contacts

Transition matrix approach for Monte Carlo simulation of coupled electron/phonon/photon dynamics

Muhammad A. Alam and Mark S. Lundstrom

Appl. Phys. Lett. 67, 512 (1995); http://dx.doi.org/10.1063/1.114553 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
A new approach for simulating the dynamics of electrons, phonons, and photons is described. The technique provides a Monte Carlo simulation of particle dynamics without the statistical noise associated with direct Monte Carlo simulation, treats physical phenomena with a wide range of time scales, and has a good computational efficiency. A transition matrix is first precomputed by direct Monte Carlo simulation. Particle populations are then updated at regular time steps by simple matrix multiplication while correcting for nonlinear effects such as carrier–carrier scattering, band filling, hot phonons, etc. The technique is well suited to studies of quantum well laser devices and pump‐probe experiments where direct Monte Carlo simulation is exceedingly difficult. © 1995 American Institute of Physics.
Show PACS
78.47.-p Spectroscopy of solid state dynamics
71.10.-w Theories and models of many-electron systems
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Time‐resolved study of carrier capture and recombination in monolayer Be δ‐doped GaAs

T. C. Damen, M. Fritze, A. Kastalsky, J. E. Cunningham, R. N. Pathak, H. Wang, and J. Shah

Appl. Phys. Lett. 67, 515 (1995); http://dx.doi.org/10.1063/1.114554 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
The first measurements of subpicosecond dynamics of carrier capture and decay in Be δ‐doped GaAs structures with p‐doping density ranging from 6×1012 to 2×1014 cm−2 and spatial distribution on monolayer scale show that photoexcited carriers are captured in the δ‐doped layer in <1 ps. Luminescence decay rates show a strong dependence on energy of the hole in the two‐dimensional Fermi gas. We attribute this to a change in the spatial electron‐hole overlap resulting from band‐mixing effects. We show that Be density fluctuations lead to strong carrier localization. © 1995 American Institute of Physics.
Show PACS
78.47.-p Spectroscopy of solid state dynamics
71.55.Eq III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Photoluminescent properties of Er‐doped GaP deposited on Si

X. Z. Wang and B. W. Wessels

Appl. Phys. Lett. 67, 518 (1995); http://dx.doi.org/10.1063/1.115174 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
Er‐doped GaP layers were deposited on Si (111) substrates using atmospheric pressure metalorganic vapor phase epitaxy. A strong characteristic Er3+ intra‐4f‐shell emission at 0.80 eV (1.54 μm) is observed over the temperature range of 12–300 K. The integrated intensity of the 0.80 eV emission is only weakly temperature dependent, decreasing less than 50% as temperature increases from 12 to 300 K. These results indicate that Er‐doped GaP thin films deposited on Si are suitable as a material for integrated optoelectronic applications. © 1995 American Institute of Physics.
Show PACS
78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors

Visible luminescence from semiconductor quantum dots in large ensembles

R. Leon, S. Fafard, D. Leonard, J. L. Merz, and P. M. Petroff

Appl. Phys. Lett. 67, 521 (1995); http://dx.doi.org/10.1063/1.115175 (3 pages) | Cited 93 times

Full Text: | Download PDF

Show Abstract
Visible luminescence has been obtained from ensembles of defect‐free, InxAl(1−x)As islands of ultrasmall dimensions embedded in AlyGa(1−y)As cladding layers. These structures were grown by molecular beam epitaxy and studied with low‐temperature photoluminescence (PL) and transmission electron microscopy. Visible luminescence is produced using various compositions of InxAl(1−x)As/AlyGa(1−y)As. Quantum dot size distributions, planar densities, dot heights, and wetting layer thicknesses are presented and correlated with the PL spectra. © 1995 American Institute of Physics.
Show PACS
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close