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31 Jul 1995

Volume 67, Issue 5, pp. 579-727

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The size dependence of the resonant Kerr nonlinearity of Cd(S,Se)‐doped glasses revisited

M. C. Schanne‐Klein, L. Piveteau, M. Ghanassi, and D. Ricard

Appl. Phys. Lett. 67, 579 (1995); http://dx.doi.org/10.1063/1.115394 (3 pages) | Cited 6 times

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Recently, the mechanisms leading to the resonant Kerr nonlinearity of Cd(S,Se)‐doped glasses could clearly be assessed. On this basis, we reconsider experimentally the size dependence of the fast component of this nonlinearity. We observe that the figure of merit corresponding to this fast component decreases when the particle size decreases. The various results that had been previously reported are discussed in light of this work. © 1995 American Institute of Physics.
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42.70.Ce Glasses, quartz
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

A ytterbium‐ and neodymium‐co‐doped yttrium aluminum garnet–buried channel waveguide laser pumped at 0.81 μm

N. Sugimoto, Y. Ohishi, Y. Katoh, A. Tate, M. Shimokozono, and S. Sudo

Appl. Phys. Lett. 67, 582 (1995); http://dx.doi.org/10.1063/1.115395 (3 pages) | Cited 22 times

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In this paper we will explain the preparation of an epitaxially grown ytterbium‐ and neodymium‐co‐doped yttrium aluminum garnet [(Yb,Nd):YAG]–buried channel waveguide laser on a YAG substrate. Waveguides, whose cores are formed with Ar ion beam etching, demonstrate single‐mode operation. The (Yb,Nd):YAG waveguide laser operates at 1.03 μm when pumped at 0.81 μm, as a result of a nonradiative energy transfer from Nd3+ ions to Yb3+ ions. The incident threshold and slope efficiency of the 5 mm long waveguide laser are 235 mW and 13%, respectively. Output power of 50 mW is obtained for an incident power of 620 mW at room temperature. © 1995 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.-v Laser optical systems: design and operation

Butterfly bistability in an InGaAs/InP multiple‐quantum well waveguide with distributed feedback

C. Coriasso, D. Campi, C. Cacciatore, L. Faustini, G. Leo, F. Buscaglia, C. Rigo, and A. Stano

Appl. Phys. Lett. 67, 585 (1995); http://dx.doi.org/10.1063/1.115396 (3 pages) | Cited 6 times

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We report the experimental observation of butterfly bistability in an InGaAs/InP multiple‐quantum well waveguide with a distributed feedback grating, under cw operation and at sub‐milliwatt input power. Plasma effects on the excitonic optical properties in multiple‐quantum well structures are the basis of the observed bistability. Insight provided by a simple coupled‐mode description of the device and by many‐body theory of the field‐matter interaction is used both for device design and for interpretation of the results. In particular, the unconventional shape of the hysteresis is due to increased optical absorption at high injected optical power. © 1995 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.82.Et Waveguides, couplers, and arrays
78.66.Fd III-V semiconductors

Digital transmission link using surface emitting lasers and photoreceivers

N. K. Dutta, D. T. Nichols, D. Vakhshoori, D. L. Sivco, and A. Y. Cho

Appl. Phys. Lett. 67, 588 (1995); http://dx.doi.org/10.1063/1.115397 (2 pages) | Cited 5 times

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Transmission system experiments using surface emitting lasers (SEL) and integrated photoreceivers have been carried out. The surface emitting laser utilizes proton implantation for current confinement and has a small signal bandwidth of 10 GHz. The p‐i‐n/modulation doped field effect transistor photoreceiver has a bandwidth of 11 GHz. Bit error rates of less than 10−9 were demonstrated using the SEL source and the photoreceiver. The receiver sensitivity is −16.5 dBm at 10 Gb/s. © 1995 American Institute of Physics.
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42.82.Bq Design and performance testing of integrated-optical systems
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Broadly tunable resonant‐cavity light emission

M. C. Larson and J. S. Harris

Appl. Phys. Lett. 67, 590 (1995); http://dx.doi.org/10.1063/1.115398 (3 pages) | Cited 7 times

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Wavelength‐tunable light emission is demonstrated from a planar microcavity employing a deformable‐membrane top mirror. A gold/silicon nitride membrane is suspended by an air gap above a GaAs cavity, containing In0.2Ga0.8As multiple quantum wells, and a GaAs/AlAs distributed Bragg reflector. Micromechanical displacement of the membrane allows for broad and continuous wavelength tuning of the cavity resonance formed by the combination of the semiconductor cavity and the air gap. Optically excited luminescence from the quantum wells is restricted to the resonant cavity modes and exhibits a 31 nm (42 meV) tuning range and 2.2 nm (3 meV) linewidth near 960 nm for 0–15 V applied bias. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

High average power KTiOPO4 electro‐optic Q‐switch

Christopher A. Ebbers and Stephan P. Velsko

Appl. Phys. Lett. 67, 593 (1995); http://dx.doi.org/10.1063/1.115399 (3 pages) | Cited 9 times

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We have demonstrated a thermally compensated KTiOPO4 (KTP) Q‐switch with a 10 mm × 6 mm clear aperture and high contrast ratio. This device showed excellent resistance to thermal depolarization at average power densities as high as 1 kW/cm2. Capacitive coupling allowed us to operate the Q‐switch for greater than 109 shots with no sign of electrochromic damage. © 1995 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.Px Semiconductor lasers; laser diodes

Determination of the dielectric tensor in anisotropic materials

M. I. Alonso, M. Garriga, F. Alsina, and S. Piñol

Appl. Phys. Lett. 67, 596 (1995); http://dx.doi.org/10.1063/1.115400 (3 pages) | Cited 9 times

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We demonstrate a new approach to determine the dielectric tensor of anisotropic materials using a rotating polarizer (or analyzer) ellipsometer. The dependence of the ellipsometric parameters as a function of azimuthal angle shows characteristic patterns very sensitive to the magnitude of the dielectric tensor and its orientation with respect to the sample surface. These patterns are in general nonsinusoidal and depend strongly on the angle setting of the fixed analyzer (or polarizer). We illustrate the method with results obtained on a generic crystallographic face of a uniaxial material, namely, a single crystal of the electron‐doped high‐temperature superconductor Nd1.85Ce0.15CuO4−δ . © 1995 American Institute of Physics.
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77.22.Ch Permittivity (dielectric function)
07.60.Fs Polarimeters and ellipsometers
74.25.Gz Optical properties

All‐optical light modulation in bacteriorhodopsin films

F. J. Aranda, R. Garimella, N. F. McCarthy, D. Narayana Rao, D. V. G. L. N. Rao, Z. Chen, J. A. Akkara, D. L. Kaplan, and J. F. Roach

Appl. Phys. Lett. 67, 599 (1995); http://dx.doi.org/10.1063/1.115401 (3 pages) | Cited 6 times

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We report a convenient method to obtain all‐optical light modulation in bacteriorhodopsin films using a degenerate four‐wave mixing geometry. Chemically stabilized films of bacteriorhodopsin in a polymer matrix for which the lifetime of the excited M state is tens of seconds were used to demonstrate all‐optical light intensity modulation. The films are observed to be stable over a period of 4 years. Due to the sensitivity of the films, small intensities of order microwatt/ cm2 are required in the modulation experiments. Furthermore the fast photochemical transition from M to B permit reasonably fast modulation speeds independent of the slow thermal M and B relaxation time. The experimental system also acts as an all‐optical switch where a low power blue pulse turns on a signal red beam. © 1995 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Ultraviolet subnanosecond pulse train generation from an all‐solid‐state Ce:LiCAF laser

Nobuhiko Sarukura, Zhenlin Liu, Yusaburo Segawa, Vadim V. Semashko, Alexander K. Naumov, Stella L. Korableva, Ravil Yu. Abdulsabirov, and Mark A. Dubinskii

Appl. Phys. Lett. 67, 602 (1995); http://dx.doi.org/10.1063/1.115402 (3 pages) | Cited 4 times

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We have directly and passively generated a 290‐nm, 600‐ps pulse train from a Ce:LiCAF laser pumped by the fourth harmonic of a conventional 10‐ns Q‐switched Nd:YAG laser. This simple, all‐solid‐state, short‐pulse laser has been realized by employing a recently studied, self‐injection‐seeding pulse‐train generation scheme using Ce:LiCAF, a tunable ultraviolet laser medium. © 1995 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.Px Semiconductor lasers; laser diodes

Demonstration of ultrafast, all‐optical, low control energy, single wavelength, polarization independent, cascadable, and integratable switch

K. I. Kang, T. G. Chang, I. Glesk, P. R. Prucnal, and R. K. Boncek

Appl. Phys. Lett. 67, 605 (1995); http://dx.doi.org/10.1063/1.115403 (3 pages) | Cited 13 times

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A new type of ultrafast all optical switch based on a Mach–Zehnder interferometer is demonstrated with a 10 ps switching window which requires only 0.65 pJ of control pulse energy. The optical nonlinearity which is utilized is associated with the gain compression of semiconductor optical amplifiers, and the switching turnoff transition does not depend on the slow amplifier recovery time. Both data and control pulses are at the same wavelength of 1.313 μm, and are not polarized orthogonal to each other. The device configuration and the semiconductor amplifiers allow for small scale integration and data output cascadability. © 1995 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Intersubband second‐harmonic generation with voltage‐controlled phase matching

J. R. Meyer, C. A. Hoffman, F. J. Bartoli, and L. R. Ram‐Mohan

Appl. Phys. Lett. 67, 608 (1995); http://dx.doi.org/10.1063/1.115404 (3 pages) | Cited 5 times

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We propose an intersubband‐based frequency‐mixing device in which phase matching is imposed electrically. The dynamic tuning considerably relaxes fabrication tolerances, allows compensation for the intensity dependence of the index, and enables phase‐matched operation at a range of degenerate and nondegenerate pump wavelengths. © 1995 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Hp Optical processors, correlators, and modulators
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors

Electrical properties of surface phases on silicon capped by amorphous Si layers

A. V. Zotov, F. Wittmann, J. Lechner, I. Eisele, S. V. Ryzhkov, and V. G. Lifshits

Appl. Phys. Lett. 67, 611 (1995); http://dx.doi.org/10.1063/1.115405 (3 pages) | Cited 4 times

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A set of the different Si:Al and Si:B surface phases capped by amorphous Si layers were grown by molecular beam epitaxy (MBE). The formation of the buried interfaces was studied by low‐energy electron diffraction and Auger electron spectroscopy. The conductivity and Hall effect measurements of the grown samples revealed that only the buried Si(111)√3×√3−B surface phase manifests itself as a highly doped degenerated layer, while all the buried Si:Al surface phases covered by amorphous Si show negligible activation of dopants. The difference in electrical properties of the buried surface phases are discussed in terms of the characteristics of their atomic structure. © 1995 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.20.Hb Impurity and defect levels; energy states of adsorbed species
61.72.uf Ge and Si

Correlations for the thermal expansion coefficients of molten glass forming systems

L. F. Chua, C. W. Yuen, and H. W. Kui

Appl. Phys. Lett. 67, 614 (1995); http://dx.doi.org/10.1063/1.115406 (3 pages) | Cited 6 times

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The specific volumes of molten Pd40Ni40P20, Pd77Cu6.5Si16.5, Pd82Si18, and Ni80P20, which are all glass formers, and were measured near the liquidus. It was found that the ratio α/Tg, where α is the thermal expansion coefficient and Tg is the glass transition temperature, remains fairly constant for all these systems. The scaling follows from the fact that with a larger thermal expansion coefficient, the free volume of the molten system would be squeezed out faster resulting in a larger Tg. This scaling behavior also allows us to roughly predict the glass transition temperature of a glass forming system. The glass forming ability can also be predicted by a parameter defined as α/T1. © 1995 American Institute of Physics.
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64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
64.70.D- Solid-liquid transitions
65.40.De Thermal expansion; thermomechanical effects

Microstructure of germanium quenched from the undercooled melt at high pressures

F. X. Zhang and W. K. Wang

Appl. Phys. Lett. 67, 617 (1995); http://dx.doi.org/10.1063/1.115407 (3 pages) | Cited 6 times

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The solidification behavior of germanium quenched from the melt at pressure of 2–7 GPa is presented. The solidification parameters of specimen were directly measured under high pressure. The microstructure of specimen was observed by electron microscopy. From the measured undercooling and average grain size, the interfacial free energy and activation energy of crystal growth under high pressures were estimated according to classical nucleation theory. Using high resolution transmission electron microscopy (HRTEM), crystals of sizes ranging from 5 to 100 nm surrounded by an amorphous matrix of germanium were found in those samples which quenched from deeply undercooled melt. © 1995 American Institute of Physics.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
61.72.Mm Grain and twin boundaries
64.70.D- Solid-liquid transitions

Applicability of one‐dimensional diffusion model for step coverage analysis—Comparison with a simple Monte Carlo method

Y. Akiyama and N. Imaishi

Appl. Phys. Lett. 67, 620 (1995); http://dx.doi.org/10.1063/1.115408 (3 pages) | Cited 3 times

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Applicability of a one‐dimensional reaction‐diffusion model (ORDM) as a tool for analyzing the gas–solid phase transition rate process during chemical vapor deposition is tested by comparing its results with those predicted by a simple Monte Carlo method. The results reveal that the ORDM is applicable when the conditions of Knudsen number (Kn)<0.03, aspect ratio (As)≳1.0, and reactive sticking coefficient (η)<0.1 are fulfilled. At large Kn and large η, the ORDM gives quite an erroneous result. The ORDM is also applicable to predict the grown film shape when η<0.1, Kn ≫1.0, and As≳2.0. © 1995 American Institute of Physics.
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81.65.-b Surface treatments

Pyroelectricity in Nylon 7 and Nylon 11 ferroelectric polymers

S. Esayan, J. I. Scheinbeim, and B. A. Newman

Appl. Phys. Lett. 67, 623 (1995); http://dx.doi.org/10.1063/1.115409 (3 pages) | Cited 8 times

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The temperature and frequency dependences of the pyroelectric current have been studied in Nylon 7 and Nylon 11 ferroelectric polymer films. A remarkable change of value of the pyroelectric currents near the glassy transition temperature (Tg) was observed. Analyses of experimental data show that the temperature behavior of pyroelectric currents can be explained by the competition of the primary and secondary effects. Currents due to these effects have different signs. Below Tg, the dominant component of the pyroelectric current is primary pyroelectricity, and above Tg the secondary effect becomes dominant. Mechanisms producing pyroelectric currents in Nylon 7 and Nylon 11 are discussed. © 1995 American Institute of Physics.
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64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
77.70.+a Pyroelectric and electrocaloric effects
77.84.Jd Polymers; organic compounds

Novel results on thermal diffusivity measurements on anisotropic materials using photothermal methods

A. Salazar, A. Sánchez‐Lavega, A. Ocáriz, J. Guitonny, J. C. Pandey, D. Fournier, and A. C. Boccara

Appl. Phys. Lett. 67, 626 (1995); http://dx.doi.org/10.1063/1.115410 (3 pages) | Cited 7 times

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We have applied two photothermal techniques (infrared radiometry and mirage) and conventional procedures to measure the thermal diffusivity of a highly anisotropic sample of pyrolytic graphite. Unexpected and strongly differing results are obtained with each technique. A theoretical analysis indicates that whereas the mirage technique gives a measure of the elements of the thermal diffusivity tensor, infrared radiometry yields the elements of another thermal magnitude represented by the inverse of this tensor. © 1995 American Institute of Physics.
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66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves

Interfacial roughness scaling and strain in lattice mismatched Si0.4Ge0.6 thin films on Si

Z. H. Ming, S. Huang, Y. L. Soo, Y. H. Kao, T. Carns, and K. L. Wang

Appl. Phys. Lett. 67, 629 (1995); http://dx.doi.org/10.1063/1.115411 (3 pages) | Cited 12 times

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Interfacial roughness parameters and lattice strain of Si0.4Ge0.6 films with varying thickness epitaxially grown on Si(100) were determined using the techniques of grazing‐incidence x‐ray scattering and diffraction. The roughness of both the buried interface and sample surface follows a similar power‐law scaling behavior with an exponent β around 0.71 for films below the critical thickness, and it undergoes a large change above the critical thickness. Observation of such a scaling law thus establishes a quantitative correlation between the interfacial roughness and lattice strain, and also allows the prediction of interfacial roughness as a function of film thickness of this compound. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.

Cross‐sectional transmission electron microscopy study of isolated diamond particles grown on a mirror‐polished Si substrate

M. Tarutani, Y. Shimato, Y. Takai, and R. Shimizu

Appl. Phys. Lett. 67, 632 (1995); http://dx.doi.org/10.1063/1.115185 (3 pages) | Cited 7 times

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Isolated diamond particles grown by chemical vapor deposition on a mirror‐polished Si substrate have been studied by cross‐sectional transmission electron microscopy. Focused ion beam micromachining enabled the cross‐sectional specimen to be carved out precisely at the center of the particle. Atomic scale observation of the diamond/Si interface revealed the presence of an ∼3 nm thick amorphous intermediate layer including a few pits around the nucleation site of the particle. Growth mechanism and relationship between growth orientation and internal defect structure of the diamond particle are discussed. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Phonon mode and electronic bottleneck associated with the nonradiative relaxation in Ni2+‐doped MgO

S. G. Demos, B. Y. Han, and R. R. Alfano

Appl. Phys. Lett. 67, 635 (1995); http://dx.doi.org/10.1063/1.115186 (3 pages) | Cited 1 time

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The up‐converted hot luminescence technique was utilized to obtain information on the nonradiative relaxation in Ni2+:MgO. The experiment shows the presence of an electronic bottleneck associated with the 3T1(t4e4) electronic state which was determined to be at 2.973±0.003 eV (23978±25 cm−1). The spectral profiles indicate that the 395±15 cm−1 phonon mode is involved in the nonradiative relaxation of the impurity Ni2+ ions. © 1995 American Institute of Physics.
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71.55.Ht Other nonmetals
78.55.Hx Other solid inorganic materials

Anomalous temperature effect in electric field orientation of poly(cyclohexylmethylsilane)

Yoshikazu Nakayama, Keiichi Hirooka, and Robert West

Appl. Phys. Lett. 67, 638 (1995); http://dx.doi.org/10.1063/1.115187 (3 pages) | Cited 2 times

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We observed an anomalous temperature effect for poly(cyclohexylmethylsilane) (PHMS) in a systematic study on formation of electrically oriented polysilane films by casting on interdigital electrodes to which a dc voltage is applied. The orientation of PHMS is quite sensitive to the process temperature: polysilanes align well along the electric field at 14 °C but do not at temperatures higher than 15 °C or lower than 11 °C. It is also shown that the degree of orientation of polysilanes in the films reflects to the electric conduction. © 1995 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology

Origin of crystallographic tilt in InGaAs/GaAs(001) heterostructure

J. M. Kang, C. S. Son, Moo‐Sung Kim, Yong Kim, Suk‐Ki Min, and C. S. Kim

Appl. Phys. Lett. 67, 641 (1995); http://dx.doi.org/10.1063/1.115188 (3 pages) | Cited 10 times

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X‐ray rocking curve measurements showed a significant crystallographic tilt in relaxed InGaAs layer grown on (001) GaAs. Transmission electron microscopy revealed that the origin of tilt is 60° dislocations generated having Burgers vectors of a same vertical edge component. Calculations using anisotropic elasticity show that this configuration of 60° dislocation array is energetically favorable when the tilt of epilayer is present as to remove the long range stress field induced by the vertical edge components at the interface. © 1995 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a Thin film structure and morphology
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Photoconductivity of Si/Ge structures

M. Arndt, W. Koschinski, K. Dettmer, F. R. Kessler, and H. J. Kriks

Appl. Phys. Lett. 67, 644 (1995); http://dx.doi.org/10.1063/1.115189 (3 pages) | Cited 2 times

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Photoconductivity (PC) spectroscopy is used to determine the optical absorption and behavior of free carriers of Si/Ge structures and (Si6Ge4)100 superlattices grown on Si0.4Ge0.6 alloys. Negative photoconductivity is observed at a temperature of 67 K. Some samples are additionally doped by nuclear transmutation. These samples exhibit a strong negative PC signal even at room temperature, which cannot be suppressed by a bias illumination. © 1995 American Institute of Physics.
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73.50.Pz Photoconduction and photovoltaic effects
78.66.Li Other semiconductors

Raman scattering from vibrational modes in metalorganic molecular beam epitaxy grown carbon doped InP: spectroscopic search for the carbon donor

M. Ramsteiner, P. Kleinert, K. H. Ploog, J. Oh, M. Konagai, and Y. Takahashi

Appl. Phys. Lett. 67, 647 (1995); http://dx.doi.org/10.1063/1.115190 (3 pages) | Cited 6 times

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Vibrational modes of carbon doped InP have been investigated by Raman scattering and cluster‐Bethe‐lattice calculations. In contrast to other carbon doped III–V semiconductors, the InP samples grown by metalorganic molecular beam epitaxy (MOMBE) show n‐type conductivity. Raman spectra from such samples reveal a vibrational mode at 220 cm−1. The frequency of this mode lies in the gap between the acoustic and optical branches of the phonon dispersion (gap mode). Cluster‐Bethe‐lattice calculations predict such a gap mode only for the carbon donor on the In site and not for the carbon acceptor on the P site. © 1995 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
63.20.Pw Localized modes
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Improved direct bonding of Si and SiO2 surfaces by cleaning in H2SO4:H2O2:HF

Karin Ljungberg, Anders Söderbärg, and Ulf Jansson

Appl. Phys. Lett. 67, 650 (1995); http://dx.doi.org/10.1063/1.115191 (3 pages) | Cited 8 times

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A method for silicon surface preparation prior to wafer bonding is presented. By cleaning the wafers in a H2SO4:H2O2 mixture in which a small amount of HF is added, and then rinsing in H2O, the bonding behavior of the surfaces is improved, compared to other pretreatments used for bonding. The modified SPM cleaning results in a highly fluorinated chemical oxide on the Si surface. A subsequent water rinse causes substitution of F by OH groups, which increase the initial attraction of the mating surfaces. Higher contact wave velocities and bond strengths than reported for other surface pretreatments have been measured, both for bare and thermally oxidized silicon surfaces. © 1995 American Institute of Physics.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.65.-b Surface treatments
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