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31 Jul 1995

Volume 67, Issue 5, pp. 579-727

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Linear and nonlinear transmission of CuxS quantum dots

V. Klimov, P. Haring Bolivar, H. Kurz, V. Karavanskii, V. Krasovskii, and Yu. Korkishko

Appl. Phys. Lett. 67, 653 (1995); http://dx.doi.org/10.1063/1.115192 (3 pages) | Cited 24 times

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CuxS nanocrystals (NC’s) are reported. The samples are prepared by a CdS‐to‐CuxS chemical conversion from the glasses originally containing CdS NC’s. A room‐temperature linear absorption of the converted samples shows several well resolved peaks with spectral positions from red to blue. These spectral features are explained by size quantization within CuxS NC’s (∼4 nm radius) with different copper deficiency [x is in the range from 1.8 (digenite) to 2 (chalcosite)]. A strong bleaching of the samples with a 3‐ns relaxation is observed in the pump–probe measurements. A high value of the third‐order nonlinear susceptibility (∼10−7 esu) is derived from the nonlinear transmission spectra. © 1995 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Radiative recombination in type‐II GaSb/GaAs quantum dots

F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop’ev, et al.

Appl. Phys. Lett. 67, 656 (1995); http://dx.doi.org/10.1063/1.115193 (3 pages) | Cited 134 times

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Strained GaSb quantum dots having a staggered band lineup (type II) are formed in a GaAs matrix using molecular beam epitaxy. The dots are growing in a self‐organized way on a GaAs(100) surface upon deposition of 1.2 nm GaSb followed by a GaAs cap layer. Plan‐view transmission electron microscopy studies reveal well developed rectangular‐shaped GaSb islands with a lateral extension of ∼20 nm. Intense photoluminescence (PL) is observed at an energy lower than the GaSb wetting layer luminescence. This line is attributed to radiative recombination of 0D holes located in the GaSb dots and electrons located in the surrounding regions. The GaSb quantum dot PL dominates the spectrum up to high excitation densities and up to room temperature. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Hx Other solid inorganic materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

An investigation of energy‐band offsets in the ZnSe/Zn1−xMgxSySe1−y multiquantum wells system

K. Shahzad, J. Petruzzello, J. M. Gaines, and C. Ponzoni

Appl. Phys. Lett. 67, 659 (1995); http://dx.doi.org/10.1063/1.115194 (3 pages) | Cited 10 times

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We present an analysis of optical data from ZnSe strained‐layer quantum wells surrounded by Zn1−xMgxSySe1−y barrier layers to extract the band offsets. If we use only the ground state transitions from our experimental data, no unique value of the offset can be obtained: a direct consequence of the fact that there are no uniquely agreed upon values of the effective masses for ZnSe available. However, if we include the excited states, only one out of six considered sets of effective masses gives a reasonable fit to the experimental data, giving the conduction band offset of only 10% of the band gap difference. © 1995 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors

The paramagnetic charge state of substitutional oxygen in GaAs

M. Linde, J.‐M. Spaeth, and H. Ch. Alt

Appl. Phys. Lett. 67, 662 (1995); http://dx.doi.org/10.1063/1.115195 (3 pages) | Cited 7 times

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In oxygen‐rich GaAs the optical absorption of substitutional oxygen (OAs) in the near infrared was investigated by measuring its magnetic circular dichroism (MCDA). An MCDA was discovered which originates from a paramagnetic ground state. By investigating its thermal decay kinetics and its dependence on optically induced recharging processes involving EL2 defects and by comparison with analogous local vibrational mode measurements, it could be shown that the MCDA is due to the metastable B′ charge state of the OAs centers. The B′ state is thus identified as the paramagnetic charge state of the OAs center. © 1995 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
71.55.Eq III-V semiconductors
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

Growth of GaN films by hot wall epitaxy

A. Ishida, E. Yamamoto, K. Ishino, K. Ito, H. Fujiyasu, and Y. Nakanishi

Appl. Phys. Lett. 67, 665 (1995); http://dx.doi.org/10.1063/1.115196 (2 pages) | Cited 9 times

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GaN films were prepared by hot wall epitaxy on sapphire (0001) substrates from Ga and NH3 sources. Growth characteristics of the GaN films were investigated from reflection high energy electron diffraction (RHEED) and x‐ray diffraction measurements, and effects of initial layers on the film growth are discussed. High quality films with streak RHEED patterns were obtained when the films were grown on a GaN initial layer prepared by Ga predeposition and its nitridation on surface nitrided sapphire substrates. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology

Order domain boundaries in ion beam synthesized semiconducting FeSi2 layers

Z. Yang, G. Shao, K. P. Homewood, K. J. Reeson, M. S. Finney, and M. Harry

Appl. Phys. Lett. 67, 667 (1995); http://dx.doi.org/10.1063/1.115197 (3 pages) | Cited 5 times

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The internal streaking contrast within ion beam synthesized β‐FeSi2 (β) grains has been studied. The results show that this internal streaking contrast is caused by the interfaces between coexistent β order domains (ODs) which are 90° oriented to one another around [200]β. The interface between adjacent ODs is (200)β. The mechanism for the formation of order domain boundaries (ODBs) is attributed to the impingements of separately nucleated growing silicide nuclei during the process of ion implantation and subsequent thermal annealing. © 1995 American Institute of Physics.
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61.72.Mm Grain and twin boundaries
61.80.Jh Ion radiation effects

Passivation of GaAs(111)A surface by Cl termination

Z. H. Lu, F. Chatenoud, M. M. Dion, M. J. Graham, H. E. Ruda, I. Koutzarov, Q. Liu, C. E. J. Mitchell, I. G. Hill, and A. B. McLean

Appl. Phys. Lett. 67, 670 (1995); http://dx.doi.org/10.1063/1.115198 (3 pages) | Cited 15 times

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It is found that an ordered and air‐stable GaAs(111)A–(1×1)–Cl surface can be produced by chemical etching/passivation with dilute HCl solution. The synchrotron polarization‐dependent Cl K‐edge x‐ray absorption near‐edge structure and x‐ray photoelectron spectroscopy studies showed that the surface is terminated with Ga–Cl bonds oriented along the surface normal. Low‐energy electron diffraction studies showed a bulklike (1×1) structure on the Cl‐terminated GaAs(111)A surface. The Cl termination eliminates surface band‐gap states caused by surface oxides. Photoluminescence measurements showed a dramatic increase in the near‐band radiative emission rate corresponding to reduction in the occupied surface band‐gap states. A reduction of surface gap states by Cl termination was confirmed by surface photovoltage measurements. © 1995 American Institute of Physics.
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81.65.-b Surface treatments
73.20.At Surface states, band structure, electron density of states

‘‘Turn‐around’’ effects of stress‐induced leakage current of ultrathin N2O‐annealed oxides

Kafai Lai, Wei‐Ming Chen, Ming‐Yin Hao, Jack Lee, Mark Gardner, and Jim Fulford

Appl. Phys. Lett. 67, 673 (1995); http://dx.doi.org/10.1063/1.115199 (3 pages) | Cited 8 times

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Studies of the thickness dependence on stress‐induced leakage current (SILC) have been performed in the thickness range of 41 to 87 Å for N2O‐annealed and O2‐grown oxides. N2O‐annealed oxide shows significantly reduced SILC leakage currents. Furthermore, SILC currents were found to increase with decreasing oxide thickness, as reported earlier. However, a ‘‘turn‐around’’ effect at ∼50 Å has been observed in these films. SILC currents begin to decrease when oxide thickness is scaled below 50 Å. This turn‐around effect can be explained using the trap‐assisted tunneling model. For thicknesses equal or less than 41 Å, defect‐related current and direct tunneling current become dominant over SILC current. Our results indicated that for N2O‐based oxides in the ultrathin thickness regime, stress‐induced leakage currents become less significant. © 1995 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.-b Surface treatments
85.30.Tv Field effect devices

Growth modes in atomic hydrogen‐assisted molecular beam epitaxy of GaAs

Yoshitaka Okada, Tomoya Fujita, and Mitsuo Kawabe

Appl. Phys. Lett. 67, 676 (1995); http://dx.doi.org/10.1063/1.115200 (3 pages) | Cited 19 times

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It has been shown that irradiation with atomic hydrogen during the growth of GaAs in molecular beam epitaxy (MBE) promotes an ideal layer‐by‐layer two‐dimensional nucleation and step‐flow growth mode on GaAs(001) substrates, thereby resulting in atomically flat surfaces. Fundamentally important observations related to elementary processes have been presented based on the reflection high‐energy electron diffraction (RHEED) and atomic force microscopy (AFM) measurements. A growth model for the atomic hydrogen‐assisted GaAs MBE has been postulated. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Broadening of the excitonic linewidth due to scattering of two‐dimensional free carriers

Wei Liu, Desheng Jiang, Kejian Luo, Yaohui Zhang, and Xiaoping Yang

Appl. Phys. Lett. 67, 679 (1995); http://dx.doi.org/10.1063/1.115201 (3 pages) | Cited 8 times

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By photoluminescence measurements we find that at low temperature the linewidth of the excitonic luminescence broadens with increasing electron density in the wider well from a photoexcited type‐I‐type‐II mixed GaAs/AlAs asymmetric double quantum well structure, which even makes the excitonic linewidth at 77 K larger than at 300 K above a certain excitation intensity. We verify that the broadening is due to the scattering of two‐dimensional carriers to excitonic states. Based on the theory of the scattering of carriers to excitonic states, we calculate the broadening of the excitonic linewidth. Our experimental results are convincing for verifying the theoretical prediction. © 1995 American Institute of Physics.
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71.35.-y Excitons and related phenomena
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors

Examination of Si(100) surfaces treated by ultrapure water with 5 ppb dissolved oxygen concentration

H. Kanaya, K. Usuda, and K. Yamada

Appl. Phys. Lett. 67, 682 (1995); http://dx.doi.org/10.1063/1.115202 (3 pages) | Cited 18 times

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Si(100) surfaces treated by ultrapure water with 5 ppb dissolved oxygen concentration after dipping in HF solution were examined by attenuated total reflection (ATR)–Fourier‐transform infrared (FT‐IR) spectroscopy, transmittance FT‐IR, and reflection high energy electron diffraction (RHEED). FT‐IR spectra and RHEED patterns depended on the rinsing time in the ultrapure water. The (111) and (110) facets appeared after rinsing for a long period of time (20–45 h) in 5 ppb dissolved oxygen concentration ultrapure water. It was suggested that the surface morphology depended on not only pH value but also the amount of etching. © 1995 American Institute of Physics.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.65.-b Surface treatments

Influence of spatial correlations on the analysis of diffusion noise in submicron semiconductor structures

Javier Mateos, Tomás González, and Daniel Pardo

Appl. Phys. Lett. 67, 685 (1995); http://dx.doi.org/10.1063/1.115203 (3 pages) | Cited 7 times

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We present a microscopic analysis of the influence of the spatial correlations between local diffusion noise sources on the noise calculation in a submicron GaAs n+ nn+ diode under different applied voltages. The simulation is carried out using an ensemble Monte Carlo simulation. We demonstrate that in the case of submicron nonhomogeneous structures the use of the diffusion coefficient to characterize the local noise sources is not correct, specially under far‐from‐equilibrium conditions. The nonuniformity of the electric field and the nonstationary behavior of the electrons lead to significant changes in the spatial correlations with respect to the case of an homogeneous semiconductor. Therefore, the diffusion noise at the terminals must be calculated in terms of the correlations between the local noise sources. © 1995 American Institute of Physics.
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72.70.+m Noise processes and phenomena
72.20.Ht High-field and nonlinear effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Sharp photoluminescence lines from nitrogen atomic‐layer‐doped GaAs

Toshiki Makimoto and Naoki Kobayashi

Appl. Phys. Lett. 67, 688 (1995); http://dx.doi.org/10.1063/1.115204 (3 pages) | Cited 22 times

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We performed nitrogen atomic‐layer doping into GaAs grown by molecular beam epitaxy using nitrogen molecules (N2) cracked by a hot tungsten filament. While uniformly nitrogen‐doped GaAs layers show relatively weak nitrogen‐related photoluminescence lines, nitrogen atomic‐layer‐doped GaAs layers show a series of sharp and strong photoluminescence lines. The dominant photoluminescence line was observed at 1.4437 eV, where an exciton bound to the nitrogen isotropic traps has the highest binding energy. © 1995 American Institute of Physics.  
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.55.Cr III-V semiconductors

Evidence for border traps in metal‐oxide‐semiconductor transistors through 1/f noise

M. D. Ploor, R. D. Schrimpf, K. F. Galloway, and G. H. Johnson

Appl. Phys. Lett. 67, 691 (1995); http://dx.doi.org/10.1063/1.115205 (3 pages) | Cited 2 times

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1/f noise was measured in n‐channel power transistors following high field stressing and high temperature anneals. Negative bias anneals resulted in considerably higher noise than produced by positive bias anneals. Then the bias was switched between positive and negative, the noise level switched between a low and a high level. The noise did not correlate with either interface or oxide trapped charge, but can be explained in terms of border traps and charge compensation. These mechanisms may be sufficient to explain a wide range of noise results in n‐channel metal‐oxide‐semiconductor field effect transistors. © 1995 American Institute of Physics.  
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Td Noise processes and phenomena
85.30.Tv Field effect devices

Raman scattering from nanometer‐sized diamond

M. Yoshikawa, Y. Mori, H. Obata, M. Maegawa, G. Katagiri, H. Ishida, and A. Ishitani

Appl. Phys. Lett. 67, 694 (1995); http://dx.doi.org/10.1063/1.115206 (3 pages) | Cited 100 times

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We have measured Raman spectra of diamond with nanometer size, called cluster diamond. The Raman bands assigned to sp2 and sp3 clusters have been observed at around 1600 and 1322 cm−1, respectively. This result suggests that the cluster diamond slightly contains the sp2 cluster. The Raman band assigned to sp3 cluster is found to shift by −10 cm−1, compared with that of bulk crystal and to be asymmetric with some tailing toward lower Raman frequency. The observed Raman spectrum agrees well with that calculated by a phonon confinement model. The crystallite size of the cluster diamond estimated from the phonon confinement model agrees approximately with that estimated from x‐ray measurement. Raman spectroscopy gives some information about the crystallite size of diamond particles with nanometer size. © 1995 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
63.20.Pw Localized modes
78.30.-j Infrared and Raman spectra

Metal‐insulator‐semiconductor inversion layer solar cells by using rapid thermal processing

A. Beyer, G. Ebest, and R. Reich

Appl. Phys. Lett. 67, 697 (1995); http://dx.doi.org/10.1063/1.115207 (3 pages) | Cited 8 times

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The possibility of producing solar cells using rapid thermal processing (RTP) was reported in recent years. This process was applied with good results to pn‐solar cells. In this work we used the RTP technique for the metal‐insulator‐semiconductor (MIS) inversion layer cells. Simultaneously with the growth of the tunneling oxide at the front side a p+/p ‘‘high‐low’’ junction forms by alloying the Al into Si at the back contact. The efficiencies reached with this process are about 15%. © 1995 American Institute of Physics.  
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84.60.Jt Photoelectric conversion
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Phenomenology of Zn diffusion and incorporation in InP grown by organometallic vapor‐phase epitaxy (OMVPE)

E. F. Schubert, C. J. Pinzone, and M. Geva

Appl. Phys. Lett. 67, 700 (1995); http://dx.doi.org/10.1063/1.115279 (3 pages) | Cited 2 times

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The diffusion characteristics and incorporation characteristics of Zn dopants in OMVPE‐grown InP are studied. The Zn diffusion constant depends strongly on concentration and increases by four orders of magnitude in the Zn concentration range 2×1018–8×1018 cm−3. This drastic concentration dependence of the Zn diffusion constant is shown to determine the Zn incorporation characteristics during OMVPE growth. A spread of Zn dopants into intentionally undoped regions may result at high Zn doping concentrations in InP. © 1995 American Institute of Physics.
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66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Significant reduction in the soft error susceptibility of GaAs field‐effect transistors with a low‐temperature grown GaAs buffer layer

Todd R. Weatherford, Dale McMorrow, Arthur B. Campbell, and Walter R. Curtice

Appl. Phys. Lett. 67, 703 (1995); http://dx.doi.org/10.1063/1.115280 (3 pages) | Cited 5 times

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The use of a low temperature grown GaAs buffer layer beneath the channel of a metal‐semicon‐ ductor field‐effect transistor is shown via computer simulation to reduce ion‐induced charge collection by two or more orders of magnitude. This reduction in collected charge is expected to reduce the heavy ion soft error rate by four to seven orders of magnitude in GaAs integrated circuits, and could have significant implications for the applicability of GaAs technology in space‐based systems. © 1995 American Institute of Physics.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
07.87.+v Spaceborne and space research instruments, apparatus, and components (satellites, space vehicles, etc.)

Effects of Si thermal oxidation on B diffusion in Si and strained Si1−xGex layers

P. Kuo, J. L. Hoyt, J. F. Gibbons, J. E. Turner, and D. Lefforge

Appl. Phys. Lett. 67, 706 (1995); http://dx.doi.org/10.1063/1.115281 (3 pages) | Cited 22 times

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Silicon thermal oxidation was used to characterize the interaction of Si interstitials with a Si1−xGex layer and with B in Si1−xGex. Diffusion of B in a Si marker layer, positioned under a Si1−xGex layer, was monitored as excess Si interstitials were injected into the bulk by the oxidation of the Si capping layer (T=850 °C, t=18 min). The Si1−xGex layer did not affect the oxidation‐enhanced diffusion of B in the Si marker layer. Hence, Si1−xGex (x<0.30) does not appear to be a strong sink for Si interstitials. In addition, the enhancement from Si thermal oxidation (T=800 °C, t=60 min) of the measured B diffusivity in Si1−xGex is similar to that in Si. This indicates that, as in Si, the mechanism for B diffusion in Si1−xGex (x<0.18) primarily involves Si interstitials. © 1995 American Institute of Physics.
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66.30.J- Diffusion of impurities
61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing

Flux dam, a method to reduce extra low frequency noise when a superconducting magnetometer is exposed to a magnetic field

R. H. Koch, J. Z. Sun, V. Foglietti, and W. J. Gallagher

Appl. Phys. Lett. 67, 709 (1995); http://dx.doi.org/10.1063/1.115282 (3 pages) | Cited 53 times

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See Also: Publisher's Note

Show Abstract
This letter discusses the effects of a moderate magnetic field applied to a SQUID magnetometer and introduces the invention of the ‘‘flux dam.’’ A flux dam is a weak link or Josephson junction in series with the pickup loop which allows magnetic flux to enter and leave the inside of the superconducting loop easily for moderate changes in magnetic field. This largely prevents the flux lines from entering and being pinned in the superconducting parts of the magnetometer which would create extra low frequency noise. SQUID magnetometers with flux dams in the pickup loop can be operated in the Earth’s magnetic field without a significant increase in low frequency flux noise. © 1995 American Institute of Physics.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
07.55.Ge Magnetometers for magnetic field measurements
74.40.-n Fluctuation phenomena

Large area double‐sided YBa2Cu3O7−δ films grown by single‐source metal‐organic chemical vapor deposition

Z. Lu, J. K. Truman, M. E. Johansson, D. Zhang, C. F. Shih, and G. C. Liang

Appl. Phys. Lett. 67, 712 (1995); http://dx.doi.org/10.1063/1.115283 (3 pages) | Cited 10 times

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Thin films of YBa2Cu3O7−δ were sequentially grown on both sides of 3 in. diameter LaAlO3 substrates by a single‐source MOCVD technique to facilitate the fabrication of double‐sided high temperature superconductor microwave devices. YBCO films on both sides of the LaAlO3 substrates had thicknesses greater than 4000 Å, Tc’s of 87–88.5 K, and microwave surface resistances as low as 23 mΩ at 94 GHz and 77 K (scaling to 260 μΩ at 10 GHz). It was found that the substrate temperature, brought to the desired value by radiant heating, played a critical role in the deposition of very low surface resistance YBCO films. Microwave bandpass filters with a 19‐pole forward coupled configuration were fabricated from these films. The filters showed excellent performance with dissipation losses as low as 0.5 dB. © 1995 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

The sticking coefficient of barium on a MgO substrate measured by laser induced fluorescence

C. Gabbanini, S. Gozzini, and A. Lucchesini

Appl. Phys. Lett. 67, 715 (1995); http://dx.doi.org/10.1063/1.115284 (3 pages) | Cited 1 time

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We present the measurement of the sticking coefficient of Ba atoms on a MgO substrate by resonant laser induced fluorescence. The substrate is used as a target for a thermal atomic beam of barium while a laser crosses the substrate and counterpropagates to the atomic beam monitoring its velocity profile. A signal corresponding to negative velocity atoms with respect to the beam direction allows to determine the sticking coefficient. It resulted equal to 0.76 ±0.05. © 1995 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
74.78.-w Superconducting films and low-dimensional structures

Extraordinary anisotropic magnetoresistance effect under 35 Oe field at room temperature in Co/Ni multilayers

C. Prados, D. García, F. Lesmes, J. J. Freijo, and A. Hernando

Appl. Phys. Lett. 67, 718 (1995); http://dx.doi.org/10.1063/1.115285 (3 pages) | Cited 22 times

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Extraordinary magnetoresistance effect has been found in Ni/Co sputtered multilayers. Magnetoresistance values higher than 130% are achieved at room temperature with a saturation magnetic field of 35 Oe, using a particular arrangement of contacts. The large anisotropic magnetoresistance and the low coercivity of these samples are the origin of such an outstanding property. The results reported here seem to have promising applications in magnetoresistive devices. © 1995 American Institute of Physics.
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75.70.-i Magnetic properties of thin films, surfaces, and interfaces
72.15.Gd Galvanomagnetic and other magnetotransport effects

Ferroelectric thin films with polarization gradients normal to the growth surface

Joseph V. Mantese, Norman W. Schubring, Adolph L. Micheli, and Antonio B. Catalan

Appl. Phys. Lett. 67, 721 (1995); http://dx.doi.org/10.1063/1.115286 (3 pages) | Cited 55 times

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See Also: Erratum

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Thin film ferroelectrics with polarization gradients normal to the growth surface readily form when gradients in temperature, strain, or composition are coupled to the polarization vector in ferroelectric materials. This letter describes the formation of thin films of potassium tantalum niobate with graded polarizations obtained by grading the tantalum to niobium ratio of the ferroelectric phase. Unlike a simple structure consisting of laminated layers of ferroelectric material, the polarization gradient which forms breaks the natural symmetry of the ferroelectric material at any given plane, resulting in a self‐poling of the structure subsequent to excitation by an oscillatory electric field. Once poled, the devices reveal a measurable potential across the structure which varies with temperature. © 1995 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
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Addendum: ‘‘Influence of misfit dislocations on the surface morphology of Si1−xGex films’’ [Appl. Phys. Lett. 66, 724 (1995)]

M. A. Lutz, R. M. Feenstra, F. K. LeGoues, P. M. Mooney, and J. O. Chu

Appl. Phys. Lett. 67, 724 (1995); http://dx.doi.org/10.1063/1.115287 (1 page) | Cited 1 time

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The omission of a key reference (Ref. 2) in the authors’ earlier publication (Ref. 1) is noted. The major conclusion of (Ref. 2) was the same as that of the authors’ in (Ref. 1), namely, that surface steps generated by dislocation glide play an important role in the morphology in Si1−xGex films. (AIP)
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
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