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14 Aug 1995

Volume 67, Issue 7, pp. 881-1037

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Accurate refractive index measurements of doped and undoped InP by a grating coupling technique

Patrick Martin, El Mostafa Skouri, Laurent Chusseau, Claude Alibert, and Hans Bissessur

Appl. Phys. Lett. 67, 881 (1995); http://dx.doi.org/10.1063/1.114723 (3 pages) | Cited 28 times

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Accurate measurements of InP refractive indices in the 1300–1600 nm wavelength range are reported. They are obtained using the grating coupling technique within an asymmetrical slab waveguide where an intrinsic InP guiding layer was grown on a doped InP substrate (N=2×1018 cm−3). Modal indices are obtained with an absolute precision of a few 10−4 from either guided or reflected waves. Bulk refractive indices of intrinsic and N‐doped InP are then deduced from the allowed modes propagating in the layered structure. With sample temperature maintained to within 0.01 K, InP bulk indices are obtained with a typical accuracy of 5×10−4. Furthermore, a (2.02±0.02) 10−4 K−1 refractive index temperature coefficient has been measured for bulk InP at room temperature. © 1995 American Institute of Physics.
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42.65.An Optical susceptibility, hyperpolarizability
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Three photon induced fluorescence from a conjugated organic polymer for infrared frequency upconversion

A. P. Davey, E. Bourdin, F. Henari, and W. Blau

Appl. Phys. Lett. 67, 884 (1995); http://dx.doi.org/10.1063/1.114724 (2 pages) | Cited 9 times

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Solutions of a paraphenylene ethynylene copolymer simultaneously absorb three photons of intense near infrared radiation. When the polymer relaxes, it emits visible radiation which can be seen clearly by the naked eye. Intensity dependent transmission studies have been used to measure α3, the three photon absorption coefficient. The value obtained for a 10−3 M solution of the polymer is 10−22 cm3 W−2, which is remarkably large in view of the low concentration employed. © 1995 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
33.50.Dq Fluorescence and phosphorescence spectra

Novel fabrication process of planar waveguides in rare‐earth doped fluoroindate glasses

R. P. de Melo, B. J. P. da Silva, E. L. Falcão‐Filho, E. F. da Silva, D. V. Petrov, Cid B. de Araújo, Y. Messaddeq, and M. A. Aegerter

Appl. Phys. Lett. 67, 886 (1995); http://dx.doi.org/10.1063/1.114725 (2 pages) | Cited 7 times

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We report the successful fabrication of planar waveguides in rare‐earth doped fluoroindate glass substrates. A new procedure for waveguide fabrication using a thermally evaporated AgF nonmetallic film was developed. The refractive index changes of more than 0.03, associated to low propagation losses achieved, open new perspectives and show the potentiality of using this glass family toward further developments in fabrication and design of integrated optical devices for optical communication wavelengths. © 1995 American Institute of Physics.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.82.Et Waveguides, couplers, and arrays

Room‐temperature operation of intermixed GaAs/AlGaAs gain coupled distributed feedback lasers

C. Kaden, H.‐P. Gauggel, F. E. Prins, M. Burkard, F. Adler, H. Schweizer, and G. W. Smith

Appl. Phys. Lett. 67, 888 (1995); http://dx.doi.org/10.1063/1.114726 (3 pages)

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Room‐temperature gain coupled distributed feedback (GC‐DFB) lasers have been realized by implantation induced intermixing in the GaAs/AlGaAs material system. The implantation dose has been systematically varied to realize GC‐DFB lasers with different gain coupling coefficients due to different band‐gap modulation of the active quantum wells. It is demonstrated that a band‐gap modulation of 7 meV is sufficient to achieve a high single mode yield at room temperature. The results are discussed on the basis of calculations with the optical matrix theory. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Nonlinear absorption and refraction in an organic dye functionalized main chain polymer waveguide in the 1.5 μm wavelength region

M. Asobe, I. Yokohama, T. Kaino, S. Tomaru, and T. Kurihara

Appl. Phys. Lett. 67, 891 (1995); http://dx.doi.org/10.1063/1.114727 (3 pages) | Cited 5 times

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We have examined the nonlinear optical properties of a main chain organic polymer waveguide in the 1.5 μm wavelength region. The nonlinear absorption coefficient was estimated to be α2=0.8–2×10−11 m/W in the 1.48–1.61 μm wavelength range. The wavelength dependence of the nonlinear absorption coefficient suggests that the strong nonlinear absorption originates from two step absorption through overtones of C–H vibrational absorption. The nonlinear refractive index was estimated to be n2=2.8(±0.3)×10−18 m2/W at a wavelength of 1.55 μm. The nonlinear absorption would restrict the applicability of the waveguide to all‐optical switching in this wavelength region. © 1995 American Institute of Physics.
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42.70.Jk Polymers and organics
42.79.Gn Optical waveguides and couplers

Deposition of smooth tetrahedral amorphous carbon thin films using a cathodic arc without a macroparticle filter

M. Chhowalla, M. Weiler, C. A. Davis, B. Kleinsorge, and G. A. J. Amaratunga

Appl. Phys. Lett. 67, 894 (1995); http://dx.doi.org/10.1063/1.114728 (3 pages) | Cited 16 times

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It is shown that for a cathode consisting of compressed graphite powder, the cathodic arc discharge is confined within deep erosion holes and the macroparticle emission is greatly reduced. Electron energy loss spectroscopy and scanning electron microscopy show that smooth tetrahedral amorphous carbon films with up to 85±10% sp3 bonding can be deposited without the use of magnetic filters. The new carbon arc discharge process holds potential for deposition of smooth tetrahedral amorphous carbon films on large area substrates due to the elimination of the magnetic filtering stage. © 1995 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition

A simple kinetic model for the optimization of electron cyclotron resonance/reactive ion beam etching performance for GaAs

Masakazu Sugiyama, Takayuki Yamaizumi, Masahiro Nezuka, Yukihiro Shimogaki, Yoshiaki Nanako, Kunio Tada, and Hiroshi Komiyama

Appl. Phys. Lett. 67, 897 (1995); http://dx.doi.org/10.1063/1.114729 (3 pages) | Cited 1 time

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In order to obtain the optimum performance for the electron cyclotron resonance/reactive ion beam etching (ECR‐RIBE) reactor, we have examined the effect of Cl2 flow rate on Cl concentration by utilizing the optical emission peak intensity from Cl as the index of its concentration. The peak intensity observed in the reactor not containing GaAs substrate decreases monotonically as the flow rate increases. However, when the GaAs substrate is introduced into the reactor, we observe the intensity decrease drastically at lower Cl2 flow rates. At the same time, strong emission peaks from Ga are observed, and their intensity also shows flow rate dependency. These results can be explained using a simple model that divides the ECR‐RIBE reactor into two continuous stirred tank reactors (CSTRs). We believe that this model and the kinetic constants obtained here can contribute to the efficient optimization of the ECR‐RIBE process. © 1995 American Institute of Physics.
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81.65.-b Surface treatments
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition

New synthesis method of fullerenes using microwave‐induced naphthalene‐nitrogen plasma at atmospheric pressure

Tetsuya Ikeda, Toshihiro Kamo, and Minoru Danno

Appl. Phys. Lett. 67, 900 (1995); http://dx.doi.org/10.1063/1.114688 (3 pages) | Cited 6 times

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A new synthesis method of fullerenes has been investigated for microwave induced naphthalene‐nitrogen plasma at atmospheric pressure using a cylindrical coaxial cavity. The toluene extract solution of soot obtained after discharges showed HPLC peaks with retention times corresponding well to those of C60 and C70. The production of fullerenes was also confirmed by mass‐spectrometric analysis. Gas temperature of nitrogen plasma determined from radiative transitions of N2+ was 3800–5700 K. From a comparison of the gas temperature and the incident microwave power, it was found that the reaction efficiency for fullerenes decreases with the increase in the gas temperature of the plasma and shows a maximum at about 4500 K. © 1995 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Creation of nanostructures on gold surfaces in nonconducting liquid

T. C. Chang, C. S. Chang, H. N. Lin, and Tien T. Tsong

Appl. Phys. Lett. 67, 903 (1995); http://dx.doi.org/10.1063/1.114689 (3 pages) | Cited 15 times

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With the application of voltage pulses, mounds of 20 nm in diameter and 2 nm in height on the average can be created on a gold surface with very high efficiency in nonconducting liquid from a gold tip. The created mounds are similar to those produced in air. Tungsten and PtIr tips are also used in this study and the dominant shapes of created structures are craters and volcanolike mounds, respectively. Our data show that these nanometer structures are created by a mechanical contact between the tip and the sample. © 1995 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Effect of misfit dislocations on leakage currents in strained multiquantum well structures

J. P. R. David, Y. H. Chen, R. Grey, G. Hill, P. N. Robson, and P. Kightley

Appl. Phys. Lett. 67, 906 (1995); http://dx.doi.org/10.1063/1.114690 (3 pages) | Cited 11 times

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The reverse leakage current in strained multiple quantum well (MQW) p‐i‐n structures has been measured for a range of different dimensions and strain. The magnitude of the leakage current is found to be dependent on the average strain of the MQW, the total MQW thickness and the thickness of the capping layer. Plan view transmission electron microscopy shows that misfit dislocation arrays form primarily at the upper and lower MQW interfaces and the total density of these determine the leakage current. © 1995 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Growth of single diamond crystallites around nanometer‐scale silicon wires

Paul A. Dennig, Harvey I. Liu, David A. Stevenson, and R. Fabian W. Pease

Appl. Phys. Lett. 67, 909 (1995); http://dx.doi.org/10.1063/1.114691 (3 pages)

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Diamond crystallites were nucleated and grown from the vapor phase on silicon substrates previously processed into arrays of nanometer‐scale silicon wires. We found that the nanowires did not aid nucleation, and that the nucleation density on the nanowire base was very low (<104 cm−2). Most importantly, we discovered that single diamond crystallites grew around the nanowires, infiltrating the nanowire arrays, forming new composite structures. This discovery clearly shows how inclusions can be trapped in vapor grown diamond crystallites, and challenges the common assumption that growth precursors on the diamond surface are relatively immobile. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

A technique for quantitative determination of the profile of the residual stress along the depth of p+ silicon films

E. H. Yang, S. S. Yang, and S. H. Yoo

Appl. Phys. Lett. 67, 912 (1995); http://dx.doi.org/10.1063/1.114692 (3 pages) | Cited 9 times

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A quantitative method to determine the profile of the residual stress along the depth of a highly boron doped silicon film is reported. First, the stress profile relative to the stress at the neutral surface of the film is obtained by measuring deflection of p+ silicon cantilevers with different etch depths. Second, the average of the residual stress is obtained by using a rotating beam structure. The stress profile is determined completely from these two calculations. One example of application by this method illustrates that most of the p+ region is subjected to the tensile stress except for the region near the front surface. © 1995 American Institute of Physics.
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68.60.-p Physical properties of thin films, nonelectronic

Reducing domain boundaries of surface reconstruction during molecular beam epitaxy on Si(111)

H. Hibino and T. Ogino

Appl. Phys. Lett. 67, 915 (1995); http://dx.doi.org/10.1063/1.114693 (3 pages) | Cited 10 times

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We report the behavior of steps and out‐of‐phase boundaries (OPBs) of 7×7 reconstruction on Si(111) during Si molecular beam epitaxy. During step‐flow growth, Si atoms are preferentially incorporated into the crystal at positions where steps are connected with OPBs on the lower terraces, resulting in sawtooth shaped steps. This heterogeneous advancement of steps causes OPBs to rearrange and thereby reduce in number. © 1995 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)

Real time monitoring of the growth of transparent thin films by spectroscopic ellipsometry

M. Kildemo and B. Drévillon

Appl. Phys. Lett. 67, 918 (1995); http://dx.doi.org/10.1063/1.114694 (3 pages) | Cited 12 times

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Real time monitoring of the growth of plasma deposited transparent thin films by spectroscopic phase modulated ellipsometry (SPME) is presented. Two on‐line methods of determination of the refractive index n and the film thickness d are evaluated. The first one is based on the fast inversion of the Fresnel equations (0.2 s with a conventional PC 486 computer). Combining the measurements simultaneously recorded at two photon energies, a 5% relative precision is obtained on 5–6000 Å thick films even deposited at high deposition rate (32 Å s−1). On the other hand, a better precision can be obtained using a least squares fit procedure based on single photon energy SPME measurements. In the latter case, it is shown that the product nd can be determined with a 1% precision, up to 6000 Å. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Apparent superstructures in scanning tunneling microscopy

J. T. Li, R. Berndt, and W.‐D. Schneider

Appl. Phys. Lett. 67, 921 (1995); http://dx.doi.org/10.1063/1.114695 (3 pages) | Cited 1 time

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Apparent superstructures have been observed with scanning tunneling microscopy (STM) on well‐ordered Ag(110) surfaces. These superstructures are due to the discrete sampling of the atomic corrugation in STM. Such sampling effects may explain superstructures observed previously with STM on graphite surfaces. © 1995 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.B- Structure of clean surfaces (and surface reconstruction)

Doping effects on the kinetics of solid‐phase epitaxial growth of amorphous alumina thin films on sapphire

Ning Yu, Todd W. Simpson, Paul C. McIntyre, Michael Nastasi, and Ian V. Mitchell

Appl. Phys. Lett. 67, 924 (1995); http://dx.doi.org/10.1063/1.114696 (3 pages) | Cited 12 times

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The effects of doping on the kinetics of solid‐phase epitaxial growth of amorphous alumina have been studied. Amorphous alumina Al2O3) thin films, 200–265 mm thick, were deposited on to (0001) sapphire substrates by electron‐beam evaporation. Iron or chromium atoms were uniformly doped into the films during deposition to cation concentrations below 5 cationic %. The kinetics of the epitaxial growth were studied at 800–1050 °C in flowing oxygen gas by in situ time‐resolved reflectivity techniques as well as by ion backscattering and channeling techniques. A phase transformation sequence from amorphous through gamma to alpha alumina has been observed in all the undoped and doped films. The transformation from γ to α alumina is a thermally activated process with an activation energy of 5.0±0.2 eV, independent of the presence of dopants. However, the presence of dopants affects the overall transformation rate. Fe enhances while Cr slows the growth rate relative to the undoped case. © 1995 American Institute of Physics.
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81.15.Np Solid phase epitaxy; growth from solid phases
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Characteristics of a two‐component chemically‐assisted ion‐beam etching technique for dry‐etching of high‐speed multiple quantum well laser mirrors

R. E. Sah, J. D. Ralston, S. Weisser, and K. Eisele

Appl. Phys. Lett. 67, 927 (1995); http://dx.doi.org/10.1063/1.114697 (3 pages) | Cited 7 times

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We have developed a two‐component chemically‐assisted ion‐beam etching (CAIBE) technique for dry‐etching of high‐speed multiple quantum well (MQW) laser mirrors. This two‐component process relaxes several constraints in the dry‐etching of Al containing opto‐electronic device structures with Cl2 alone. The strained 3×100 μm2 In0.35Ga0.65As/GaAs undoped and p‐doped 4‐QW ridge waveguide lasers containing GaAs/AlAs binary short‐period superlattice cladding layers with cavities fabricated by this CAIBE technique demonstrate record direct modulation bandwidths of 24 GHz (Ibias=25 mA) and 33 GHz (Ibias=65 mA), respectively. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
81.65.-b Surface treatments

Normal incidence photoresponse in GaAs/AlGaAs quantum well infrared photodetector

Zhenyu Yuan, Zhenghao Chen, Dafu Cui, Jianwei Ma, Qiang Hu, Junming Zhou, and Yueliang Zhou

Appl. Phys. Lett. 67, 930 (1995); http://dx.doi.org/10.1063/1.114698 (2 pages) | Cited 14 times

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A normal incidence quantum well infrared photodetector consisting of asymmetric GaAs/AlGaAs quantum wells has been demonstrated. The detector uses electron intersubband transitions between bound to extended states in the step quantum well. The infrared photocurrent spectrum characterized using a glowbar monochromator source shows a photovoltaic response in the configuration of normal incidence. The peak wavelength is 10.3 μm and a detectivity Dλ∗=3.7×108 cm √Hz/W was achieved at T=80 K. © 1995 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.50.Pz Photoconduction and photovoltaic effects
78.66.Fd III-V semiconductors

Characterization of arsenide/phosphide heterostructure interfaces grown by gas‐source molecular beam epitaxy

A. Y. Lew, C. H. Yan, C. W. Tu, and E. T. Yu

Appl. Phys. Lett. 67, 932 (1995); http://dx.doi.org/10.1063/1.114699 (3 pages) | Cited 6 times

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We have used cross‐sectional scanning tunneling microscopy to study interface structure in arsenide/phosphide heterostructures grown by gas‐source molecular beam epitaxy. High‐resolution images of a sample grown at 550 °C by interrupting the growth of GaAs at 200 Å intervals with a 40 s P2 flux reveal phosphide interlayers of widths as large as 30 Å with lateral variations in structure over <100 Å length scales. Images of a similar sample grown at 450 °C exhibit narrower interlayers and a lower level of phosphorus incorporation. These samples have also been characterized by high‐resolution x‐ray diffraction and reflection high‐energy electron diffraction. Together, these studies provide direct information about nanometer‐scale grading and lateral nonuniformity of interfaces that can occur under these growth conditions. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.B- Structure of clean surfaces (and surface reconstruction)

Tunable wavelength hot electron light emitter

N. Balkan, A. Teke, R. Gupta, A. Straw, J. H. Wolter, and W. van der Vleuten

Appl. Phys. Lett. 67, 935 (1995); http://dx.doi.org/10.1063/1.114700 (3 pages) | Cited 4 times

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We demonstrate the operation of a surface emitting light emitting diode. The wavelength of the emitted light can be tuned with the applied voltage. The device is based on a p‐GaAs and n‐Ga1−xAlxAs heterojunction containing an inversion layer in the p side and, GaAs quantum wells in the n side, and, is referred to as HELLISH‐II (hot electron light emitting and lasing in semiconductor heterojunction). The device utilizes hot electron longitudinal transport and, therefore, light emission is independent of the polarity of the applied voltage. © 1995 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Fd III-V semiconductors

Observation of quantum effects and Coulomb blockade in silicon quantum‐dot transistors at temperatures over 100 K

Effendi Leobandung, Lingjie Guo, Yun Wang, and Stephen Y. Chou

Appl. Phys. Lett. 67, 938 (1995); http://dx.doi.org/10.1063/1.114701 (3 pages) | Cited 131 times

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We report the fabrication and characterization of lithographically defined nanoscale silicon quantum‐dot transistors that operate at temperatures over 100 K and a bias higher than 0.07 V. In the tunneling regime, these transistors show strong current oscillations due to quantum confinement and single‐electron charging effects. In the propagating regime, a different kind of current modulation has been observed, which is attributed to the interference between different modes of quantum waves in a cavity. Proper scaling of these transistors should lead to operation at room temperature and a bias of 0.3 V. © 1995 American Institute of Physics.
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85.30.Tv Field effect devices
73.40.Gk Tunneling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Evidence for hydrogen incorporation during porous silicon formation

P. Allongue, C. Henry de Villeneuve, L. Pinsard, and M. C. Bernard

Appl. Phys. Lett. 67, 941 (1995); http://dx.doi.org/10.1063/1.114702 (3 pages) | Cited 35 times

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The incorporation of hydrogen into Si, under different electrochemical conditions including anodization in fluoride solutions where porous silicon is formed, is studied by NRA and in situ capacitance measurements. Results suggest a large near surface concentration of H whilst simulation show that the maximum penetration depth is governed by volume diffusion of H and material removal. Diffusion coefficients are found to be dependent on electrochemical conditions and ranged between 10−13 and 10−11 cm2 s−1. The interplay of H permeation with porous silicon layer formation is discussed. © 1995 American Institute of Physics.
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68.35.Dv Composition, segregation; defects and impurities
66.30.J- Diffusion of impurities
78.55.Hx Other solid inorganic materials

Role of space charge in SrS:Ce thin‐film electroluminescent devices studied by the photoirradiation effect

Koutoku Ohmi, Katsuaki Ishitani, Shosaku Tanaka, and Hiroshi Kobayashi

Appl. Phys. Lett. 67, 944 (1995); http://dx.doi.org/10.1063/1.114703 (3 pages) | Cited 6 times

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The role of space charge in SrS:Ce thin‐film electroluminescent devices was studied by photoirradiation effects on capacitance–voltage and charge–voltage curves. Unique electrical and optical characteristics, such as relaxation of phosphor field and leading and trailing edge emission, are well interpreted by the model based on the formation of uniform space charge. The density of ionized traps, which cause positive space charge, was estimated to be 5.6×1016 cm−3. The polarization charge of 0.94 μC/cm2 due to the space charge is more than half of the total polarization charge. © 1995 American Institute of Physics.
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78.60.Fi Electroluminescence
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
85.60.Jb Light-emitting devices

Solid‐state reaction in Pd/ZnSe thin film contacts

K. J. Duxstad, E. E. Haller, K. M. Yu, E. D. Bourret, J. M. Walker, X. W. Lin, and J. Washburn

Appl. Phys. Lett. 67, 947 (1995); http://dx.doi.org/10.1063/1.114704 (3 pages) | Cited 4 times

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We report on solid‐state reactions in Pd thin film contacts on ZnSe at temperatures below 500 °C. We found that a solid‐state reaction was initiated at the Pd/ZnSe interface by thermal annealing at 200 °C. A tetragonal ternary phase, Pd5+xZnSe, consisting of highly oriented grains was formed as a result of this reaction. This phase is found to be stable up to an annealing temperature of 400 °C. The crystallography and morphology of this ternary Pd–ZnSe phase was studied by x‐ray diffraction and transmission electron microscopy and has similarities to the analogous ternary Pd–GaAs phase formed in the Pd/GaAs contact structure. The Pd/ZnSe interface is found to be thermally more stable than the corresponding Pd/GaAs and Pd/Si structures. Comparisons are made between the systematics of Pd/semiconductor interfacial phenomena on the three semiconductors. © 1995 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
68.60.Dv Thermal stability; thermal effects
68.55.Nq Composition and phase identification

In‐well screening nonlinearities in piezoelectric multiple quantum wells

X. R. Huang, D. R. Harken, A. N. Cartwright, Arthur L. Smirl, J. L. Sánchez‐Rojas, A. Sacedón, E. Calleja, and E. Muñoz

Appl. Phys. Lett. 67, 950 (1995); http://dx.doi.org/10.1063/1.114705 (3 pages) | Cited 12 times

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The contribution of the in‐well screening of the piezoelectric field to the nonlinear optical response of a [111]‐oriented strained InGaAs/GaAs multiple quantum well is separated from, and compared to, that associated with the out‐of‐well screening and with bleaching by using picosecond nondegenerate differential transmission techniques. These measurements demonstrate that the per‐carrier nonlinearity associated with the in‐well screening is smaller than that associated with the out‐of‐well screening by a factor roughly equal to the number of wells. © 1995 American Institute of Physics.
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78.66.Fd III-V semiconductors
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
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