APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

21 Aug 1995

Volume 67, Issue 8, pp. 1045-1171

Page 1 of 2 Pages Next Page | Jump to Page

Experimental observation of vertical cavity with polarization birefringence using asymmetric superlattice

D. Vakhshoori and R. E. Leibenguth

Appl. Phys. Lett. 67, 1045 (1995); http://dx.doi.org/10.1063/1.114459 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
Vertical cavity etalons with asymmetric superlattice claddings have been fabricated. As predicted earlier, the cavities with sawtooth superlattice claddings grown on (100) oriented substrate are birefringent with the new optical axes along (011) and (011) directions. The difference in the resonant wavelengths of the cavity modes polarized along (011) and (011) are measured to be about +0.3 and −0.3 Å for the two senses of our sawtooth superlattice structures. The change of the sign of the wavelength shift indicates that the observation is not due to an electro‐optic effect of the incorporated p‐n junction but is due to the reduction of the III‐V crystalline symmetry by the presence of the asymmetric superlattice. © 1995 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Efficient luminescence from AlP/GaP neighboring confinement structure with AlGaP barrier layers

F. Issiki, S. Fukatsu, and Y. Shiraki

Appl. Phys. Lett. 67, 1048 (1995); http://dx.doi.org/10.1063/1.114460 (3 pages) | Cited 15 times

Full Text: | Download PDF


See Also: Erratum

Show Abstract
Highly efficient photoluminescence (PL) was observed from a new class of AlP/GaP quantum‐confined geometry, neighboring confinement structure (NCS). The PL intensity of AlP/GaP NCSs was even higher than that of a 300‐period AlP/GaP superlattice (SL), and the PL of the NCS exhibited much improved immunity against thermal quenching compared to SLs. The luminescence origin of the NCS was confirmed from the well width dependence of the PL peak shift. The peak shifts were compared with the calculation within the effective mass approximation using the previously reported band parameters for AlP and GaP. © 1995 American Institute of Physics.
Show PACS
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Low threshold optical bistable switching in an asymmetric λ/4‐shifted distributed‐feedback heterostructure

S. Janz, J. He, Z. R. Wasilewski, and M. Cada

Appl. Phys. Lett. 67, 1051 (1995); http://dx.doi.org/10.1063/1.114461 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
The nonlinear optical response of an asymmetric λ/4‐shifted distributed‐feedback GaAs/AlAs heterostructure is investigated using numerical methods, and also demonstrated experimentally. This structure exhibited both optical switching and bistability at incident wavelengths near λ=884 nm. The observed bistability threshold of less than 1 kW cm−2 is more than an order of magnitude smaller than that of any previously measured distributed‐feedback heterostructures. © 1995 American Institute of Physics.
Show PACS
42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.66.Fd III-V semiconductors

Dominant mechanisms for the temperature sensitivity of 1.3 μm InP‐based strained‐layer multiple‐quantum‐well lasers

Shunji Seki, Hiromi Oohasi, Hideo Sugiura, Takuo Hirono, and Kiyoyuki Yokoyama

Appl. Phys. Lett. 67, 1054 (1995); http://dx.doi.org/10.1063/1.114462 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
We study the dominant mechanism for the temperature sensitivity of the differential quantum efficiency and threshold current of 1.3 μm InP‐based strained‐layer multiple‐quantum‐well (MQW) lasers. We show that the temperature dependence of both properties is separated into two regions at critical temperature c). Below c, the temperature dependence of internal loss in the QWs plays a very important role in determining the temperature sensitivity of the differential quantum efficiency. On the other hand, above c, its temperature sensitivity is affected more by the internal loss in the separate confinement heterostructure (SCH) region. Excellent correlation is observed between the spillover of holes into the SCH region and c. It is also shown that the Auger recombination current plays a more significant role in determining the temperature dependence of threshold current below c. However, above c, electrostatic band‐profile deformation, which causes a significant increase in loss and radiative recombination current in the SCH region, plays the more dominant role than the Auger recombination current. © 1995 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Optical trapping and fluorescence detection in laminar flow streams

W. Wang, Y. Liu, G. J. Sonek, M. W. Berns, and R. A. Keller

Appl. Phys. Lett. 67, 1057 (1995); http://dx.doi.org/10.1063/1.114463 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
An optical laser trap with fluorescence excitation/emission capability has been integrated in a flow cytometric geometry for the study of microparticle confinement and off‐axis fluorescence detection in laminar flow streams. Measurements of particle escape velocity, trapping efficiency, and fluorescence intensity are presented for 2 μm diameter dye‐tagged latex microspheres in laminar flow streams having velocities of up to 12 mm/s. Experimental results are compared with theoretical values for flow velocity and fluorescence intensity and found to be in excellent agreement. © 1995 American Institute of Physics.
Show PACS
87.80.-y Biophysical techniques (research methods)
07.60.-j Optical instruments and equipment

Europium chelate solid laser based on morphology‐dependent resonances

Hiroshi Taniguchi, Junji Kido, Masahisa Nishiya, and Shinobu Sasaki

Appl. Phys. Lett. 67, 1060 (1995); http://dx.doi.org/10.1063/1.114464 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
We show lasing (with the threshold of μJ order) due to morphology‐dependent resonances (MDRs) from solid polystyrene spheres with volume‐distributed europium (Eu) chelates. Lasing spectra depending on MDRs are reported, and a practical usefulness of the Eu chelate laser with the solid spheres is described compared with the previous one with liquid spheres.
Show PACS
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.-v Laser optical systems: design and operation

Energetics of microvoid formation in Si from supersaturated vacancies

Nicolas Cuendet, Timur Halicioglu, and William A. Tiller

Appl. Phys. Lett. 67, 1063 (1995); http://dx.doi.org/10.1063/1.114465 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
Using a Tersoff‐type empirical potential energy function, the free energy of formation for microvoids in silicon containing from 1 to 57 vacancies was calculated as a function of temperature and vacancy supersaturation. The results apply equally well to microvoid nucleation during crystal growth or, at low temperatures, as a consequence of ion implantation. The results indicate that homogeneous nucleation is an unlikely process for the crystal growth case where heterogeneous nucleation via adsorbate attachment to the microvoid surface is a very likely process. © 1995 American Institute of Physics.
Show PACS
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.72.J- Point defects and defect clusters
61.72.Bb Theories and models of crystal defects

Time dependence of ferroelectric coercive field after domain inversion for lithium‐tantalate crystal

Shiuh Chao, William Davis, David D. Tuschel, Ronald Nichols, Mool Gupta, and Hsing C. Cheng

Appl. Phys. Lett. 67, 1066 (1995); http://dx.doi.org/10.1063/1.114466 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
We found the ferroelectric coercive field of LiTaO3, both in forward and reverse direction, vary with time after the domain is inverted. The coercive field drops when the domain is inverted, then gradually recovers. This phenomenon is light sensitive. The existence of a net time‐varying internal electric field after domain inversion is hypothesized. The internal field is composed of the depolarization field, which is due to the spontaneous electric dipole moments, and an opposite direction time‐varying space‐charge field which is due to the redistribution of free‐carriers transport under the influence of the depolarization field. Electro‐optical effect caused by the internal electric field has been observed by means of an in situ optical monitoring technique for the domain inversion process. The in situ optical monitoring technique is based on using the LiTaO3 thin‐plate crystal as a low finesse Fabry–Perot interferometer. © 1995 American Institute of Physics.
Show PACS
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Ultrafast intermetallic compound formation between eutectic SnPb and Pd where the intermetallic is not a diffusion barrier

Y. Wang and K. N. Tu

Appl. Phys. Lett. 67, 1069 (1995); http://dx.doi.org/10.1063/1.114467 (3 pages) | Cited 20 times

Full Text: | Download PDF

Show Abstract
An intermetallic compound which grows at a rate greater than 1 μm/s has been observed in the liquid/solid reaction at 250 °C between molten eutectic SnPb solder and solid Pd. The intermetallic PdSn3 does not form as a diffusion barrier between the reactants, rather it grows as lamellae into the molten solder. The growth direction is normal to the liquid/solid interface, where the molten solder between the lamellae serves as fast diffusion channels during the reaction. For comparison, molten Sn (Pb‐free) reacts with Pd at a rate slower by one order of magnitude. The intermetallics, in this case, grow as a diffusion barrier between the Sn and Pd. The role of Pb in the extremely fast eutectic soldering reaction is discussed, in view of the trend of searching for a Pb‐free solder in electronic packaging. © 1995 American Institute of Physics.
Show PACS
68.35.Fx Diffusion; interface formation
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Low‐temperature growth of Bi4Ti3O12 epitaxial films on SrTiO3(001) and Bi2Sr2CaCu2O8(001) single crystals by laser molecular beam epitaxy

Supab Choopun, Takuya Matsumoto, and Tomoji Kawai

Appl. Phys. Lett. 67, 1072 (1995); http://dx.doi.org/10.1063/1.114468 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
Epitaxial thin films of bismuth titanate Bi4Ti3O12 have been grown by laser molecular beam epitaxy on SrTiO3(001) and Bi2Sr2CaCu2O8(001) single crystal at low processing temperature. X‐ray diffraction patterns exhibit that c‐axis oriented Bi4Ti3O12 thin films can be grown at a substrate temperature as low as 450 °C with good crystallinity and no presence of secondary phases. RHEED patterns evidence the flat surface of the films and the layer‐by‐layer growth mode. © 1995 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology

Manipulation of C60 molecules on a Si surface

P. H. Beton, A. W. Dunn, and P. Moriarty

Appl. Phys. Lett. 67, 1075 (1995); http://dx.doi.org/10.1063/1.114469 (3 pages) | Cited 89 times

Full Text: | Download PDF

Show Abstract
We have used the tip of a scanning tunneling microscope to position individual C60 molecules on a Si(111) surface. It is possible to form simple patterns of molecules at room temperature using this technique. © 1995 American Institute of Physics.
Show PACS
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

The influence of strain energy on abnormal grain growth in copper thin films

E. M. Zielinski, R. P. Vinci, and J. C. Bravman

Appl. Phys. Lett. 67, 1078 (1995); http://dx.doi.org/10.1063/1.114455 (3 pages) | Cited 22 times

Full Text: | Download PDF

Show Abstract
Biaxial stress and strain in (100) and (111) oriented grains have been measured as a function of annealing temperature for a Cu film on an oxidized Si substrate which exhibits abnormal (100) grain growth. The observed behavior indicates isostrain averaging, which is consistent with grain growth that is controlled by strain energy density minimization. In contrast, two films which do not exhibit (100) abnormal grain growth appear to follow isostress averaging. Strain energy density minimization in this situation favors (111) grain growth. © 1995 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
61.72.Mm Grain and twin boundaries

Diamond film synthesis in low‐pressure premixed methane‐oxygen flames

J. S. Kim and M. A. Cappelli

Appl. Phys. Lett. 67, 1081 (1995); http://dx.doi.org/10.1063/1.114456 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
We present the successful demonstration of diamond film synthesis in low‐pressure premixed methane‐oxygen flames. Experiments are performed in a low‐pressure flat‐flame facility that has been employed previously to study diamond synthesis in premixed acetylene‐oxygen and ethylene‐oxygen flames. The quality of the diamond films deposited is comparable to that deposited using these other flames, and the growth rate is approximately 0.2–0.3 μm/h; some factor of 10 less than acetylene‐oxygen flames and one‐third of that obtained for ethylene‐oxygen flames. However, carbon conversion efficiencies are remarkably similar, since the cold gas velocities used here are substantially less, because of the lower burning velocities. The equivalence ratios employed in these methane‐oxygen flames are in the 1.8–2.0 range. These values correspond to C:O ratios that are substantially lower than those that have been used to grow good quality diamond in acetylene‐oxygen and ethylene‐oxygen flames at low and atmospheric pressure. General observations suggest that the quality is only slightly sensitive to changes in equivalence ratios and very sensitive to substrate temperature. Uniform diamond films over areas of about 5.5 cm2 are deposited with substrate temperatures of approximately 900 °C. © 1995 American Institute of Physics.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Improved optical emission of porous silicon with different postanodization processes

Vittorio Pellegrini, Francesco Fuso, Gabriele Lorenzi, Maria Allegrini, Alessandro Diligenti, Andrea Nannini, and Giovanni Pennelli

Appl. Phys. Lett. 67, 1084 (1995); http://dx.doi.org/10.1063/1.114457 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
Time integrated and time resolved photoluminescence measurements have been performed at room temperature on porous silicon samples prepared under identical conditions but processed after anodization in four different ways. New and simple treatments were made to reduce the structural damage due to the drying process. The results show that suitable conditions exist to substantially improve the optical emission of porous silicon samples. The observed modifications of the time integrated photoluminescence signal are related to dangling bonds produced during the drying process that are supposed to act as trap states in the electron–hole or excitons recombination mechanism. Time resolved measurements provide an evaluation of the relative density of trap states for each analyzed sample. © 1995 American Institute of Physics.
Show PACS
78.55.Hx Other solid inorganic materials
78.47.-p Spectroscopy of solid state dynamics
73.20.At Surface states, band structure, electron density of states

Photoluminescence properties of 13×13 nm GaAs quantum wires buried in trench structures reduced by growing GaAs/AlAs superlattice layers

T. Sogawa, S. Ando, and H. Kanbe

Appl. Phys. Lett. 67, 1087 (1995); http://dx.doi.org/10.1063/1.114470 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
We report lateral‐size control of GaAs/AlAs trench‐buried quantum wires (QWRs) on a scale of 10 nm by metalorganic chemical vapor deposition using nonplanar substrates. The lateral width is reduced to 12–13 nm by growing GaAs/AlAs superlattice layers (SLs) on the (110) sidewall facets of the trenches, where the roughness of the SL sidewalls is approximately several monolayers. Low‐temperature photoluminescence (PL) properties of nearly square 13×13 nm QWRs buried in the trenches exhibit a strong PL blue shift of 85 meV with respect to the band‐gap energy of GaAs bulk and PL polarization anisotropy of 25% due to two‐dimensional quantum confinement effects. The emission from Ga‐rich AlGaAs regions in the trenches constituting AlGaAs vertical quantum wells was also observed. We demonstrate that substituting GaAs/AlAs SLs for the AlGaAs layer effectively eliminates the undesired emission levels caused by the inevitable Al content fluctuation in the AlGaAs layer grown on nonplanar structures. © 1995 American Institute of Physics.
Show PACS
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.55.-a Thin film structure and morphology

Orientation effect in electronic properties of silicon wires

A. B. Filonov, G. V. Petrov, V. A. Novikov, and V. E. Borisenko

Appl. Phys. Lett. 67, 1090 (1995); http://dx.doi.org/10.1063/1.114458 (2 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
Electronic properties of (100), (110), and (111) oriented H‐terminated silicon quantum‐size wires have been calculated within the self‐consistent LCAO method. The quantum confinement induced direct band gap only appears in the (100) wires. Surface silicon d and p electrons are found to be responsible for the bottom of the conduction band while the top of the valence band are formed by p electrons of the core atoms. Possible reconstruction of the wire surface is discussed. © 1995 American Institute of Physics.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Abruptness of Ge composition at the Si/SiGe interface grown by ultrahigh vacuum chemical vapor deposition

W. C. Tsai, C. Y. Chang, T. G. Jung, T. S. Liou, G. W. Huang, T. C. Chang, L. P. Chen, and H. C. Lin

Appl. Phys. Lett. 67, 1092 (1995); http://dx.doi.org/10.1063/1.114471 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
A model is proposed to estimate the interfacial abruptness of the Si/SiGe heterojunction. In this model, a transition region with linearly graded Ge composition is assumed at the Si/SiGe interface. The Ge composition x of Si/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition at 550 °C is found to increase with the deposition time as deposition at the same gas phase composition. This phenomenon can be explained by this model and the fitting results match the measured data. The thickness of the transition region and the transition time can be extracted from these fittings. The transition thicknesses are found to be about 1.9 nm or thinner as grown at 550 °C or below. © 1995 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Nonradiative capture of hot photoelectrons by multiphonon emission in highly excited CdS crystals

A. Žukauskas and S. Juršėnas

Appl. Phys. Lett. 67, 1095 (1995); http://dx.doi.org/10.1063/1.114972 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Luminescence kinetics of nonthermalized electron‐hole plasma in highly excited CdS crystals with different concentration of native defects has been studied at T=298 K. The shape of the kinetics indicated an enhancement of the plasma nonradiative recombination with increased carrier effective temperature. The experimental results are in good agreement with a model of thermal activation of nonradiative capture by multiphonon emission in centers with the barrier energy of W=110 meV. © 1995 American Institute of Physics.
Show PACS
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.55.Gs II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics

Properties of vapor phase epitaxial zinc selenide codoped with cadmium and chlorine

K. Bao, P. D. Healey, M. Gokhale, J. E. Ayers, and F. C. Jain

Appl. Phys. Lett. 67, 1098 (1995); http://dx.doi.org/10.1063/1.114973 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Zinc selenide epitaxial layers have been grown by ultraviolet‐assisted organometallic vapor phase epitaxy (OMVPE) with cadmium and chlorine codoping, using the sources DMSe, DMZn, DMCd, and HCl. Growth was carried out at 400 °C with ultraviolet irradiation at an intensity of 4 or 7.5 mW/cm2. Samples codoped with cadmium showed increased incorporation of chlorine donors relative to control samples having no cadmium codoping. This effect was more pronounced at the lower ultraviolet intensity. The growth rate for the doped films decreased with increasing mole fraction of hydrogen chloride. By the use of cadmium codoping, we have achieved the highest electron concentrations yet reported for hydrogen chloride doping of OMVPE‐grown ZnSe. The best results obtained in this study were an electron concentration of 2.4×1018 cm−3 and a resistivity of 0.0141 Ω cm (300 K values). We have proposed a model based on the compensation of tetrahedral misfit to explain these results. © 1995 American Institute of Physics.
Show PACS
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.uj III-V and II-VI semiconductors

Temperature dependence of minority and majority carrier mobilities in degenerately doped GaAs

Michael L. Lovejoy, Michael R. Melloch, and Mark S. Lundstrom

Appl. Phys. Lett. 67, 1101 (1995); http://dx.doi.org/10.1063/1.114974 (3 pages) | Cited 21 times

Full Text: | Download PDF

Show Abstract
Measured minority and majority carrier mobility temperature dependencies in heavily doped n‐ and p‐GaAs are compared. Majority carrier mobilities in heavily doped GaAs are essentially temperature (T) independent while minority carrier mobilities exhibit a roughly 1/T dependence. Majority carrier freezeout, which reduces both majority–minority carrier and ionized impurity scattering, is shown not to be responsible for the 1/T minority carrier mobility dependence. The difference in minority and majority carrier mobility T dependencies is explained in terms of the increased degree of degeneracy of majority carriers with decreased temperature, which decreases majority–minority carrier scattering. © 1995 American Institute of Physics.
Show PACS
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors

Over‐relaxation of misfit strain in heavily carbon‐doped GaAs grown by metalorganic molecular beam epitaxy after annealing

Hyunchul Sohn, E. R. Weber, Shinji Nozaki, and Kiyoshi Takahashi

Appl. Phys. Lett. 67, 1104 (1995); http://dx.doi.org/10.1063/1.114975 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
Using double crystal x‐ray diffractometry (XRD) and transmission electron microscopy (TEM), the annealing effects on heavily carbon‐doped GaAs films were studied. From isochronal annealing, the evolution of compressive strain in carbon‐doped GaAs films was observed by XRD. From cross‐sectional TEM, unusual misfit dislocations with extra‐half planes on the GaAs side were observed in the sample annealed at 900 °C for 30 min in addition to normal misfit dislocations with extra‐half planes on the film side. A possible mechanism for the formation of such misfit dislocations is proposed based on the over‐relaxation of misfit strain in the film. © 1995 American Institute of Physics.
Show PACS
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Cc Kinetics of defect formation and annealing

Visible‐spectrum (λ=650 nm) photopumped (pulsed, 300 K) laser operation of a vertical‐cavity AlAs–AlGaAs/InAlP–InGaP quantum well heterostructure utilizing native oxide mirrors

M. J. Ries, N. Holonyak, E. I. Chen, S. A. Maranowski, M. R. Islam, A. L. Holmes, and R. D. Dupuis

Appl. Phys. Lett. 67, 1107 (1995); http://dx.doi.org/10.1063/1.114976 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Data are presented on the 300 K photopumped (pulsed) laser operation of a visible‐spectrum (λ=650 nm) AlAs–AlGaAs/InAlP–InGaP quantum‐well heterostructure (QWH) crystal that utilizes high‐index‐contrast AlAs‐native‐oxide/Al0.6Ga0.4As distributed Bragg reflector mirrors. The mirrors are formed by the lateral oxidation (H2O+N2, 425 °C) of two sets of four ‘‘buried’’ AlAs layers that are separated by Al0.6Ga0.4As. These mirrors, which create a high‐Q cavity in the vertical direction, ‘‘sandwich’’ a one‐wavelength InAlP–InGaP QW active region, thus forming a compact microcavity that ‘‘tunes’’ the carrier scattering and recombination into a narrow spectrum (∼25 Å) and supports laser operation in the vertical direction. © 1995 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Determination of Landau level lifetimes in AlGaAs/GaAs heterostructures with a ps free electron laser

W. Heiss, P. Auer, E. Gornik, C. R. Pidgeon, C. J. G. M. Langerak, B. N. Murdin, G. Weimann, and M. Heiblum

Appl. Phys. Lett. 67, 1110 (1995); http://dx.doi.org/10.1063/1.114977 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Previous determinations of Landau level lifetimes in GaAs/AlGaAs heterostructures from saturation cyclotron resonance measurements have been confused by heating effects. We have utilized a ps free electron laser to show that for samples with sheet concentration less than 3×1011 cm−2, true saturation of cyclotron resonance is observable at high magnetic fields, in the presence of polaron nonparabolicity. However, at higher concentrations, the polaron is screened and saturation is no longer possible. At low magnetic fields (i.e., long wavelengths) where the polaron nonparabolicity is negligible, saturation is not possible for any sheet density. It is confirmed that the lifetime of the first excited Landau level has an inverse dependence on carrier density. © 1995 American Institute of Physics.
Show PACS
78.47.-p Spectroscopy of solid state dynamics
71.55.Eq III-V semiconductors
78.66.Fd III-V semiconductors

Current induced second harmonic generation in semiconductors

Jacob B. Khurgin

Appl. Phys. Lett. 67, 1113 (1995); http://dx.doi.org/10.1063/1.114978 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
Direct current in semiconductor is theoretically shown to be capable of doubling the frequency of the incoming optical radiation. The second order susceptibility, proportional to the current is calculated to be in the 10−14−10−13 m/V range. Applications of the novel phenomenon in probing and mapping of the current in semiconductor devices are considered. © 1995 American Institute of Physics.
Show PACS
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics

Oxygen‐based deep levels in metalorganic vapor phase epitaxy indium gallium arsenide

J. W. Huang, T. F. Kuech, and T. J. Anderson

Appl. Phys. Lett. 67, 1116 (1995); http://dx.doi.org/10.1063/1.114979 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
We have studied the defect engineering in metalorganic vapor phase epitaxy InxGa1−x As by controlled oxygen doping. Diethylaluminum ethoxide (DEALO) was used as an oxygen precursor to provide the intentional deep level incorporation. DEALO doping in InxGa1−xAs:Si with x≤0.25 resulted in the reduction in carrier concentrations. The Al and O incorporation with a DEALO mole fraction was weakly dependent on alloy composition for x≤0.25. The degree of electrical compensation, however, decreased as the In content increased at the same oxygen content. Deep level transient spectroscopy investigations on a series of InxGa1−xAs:Si:O samples with x ranging from 0 to 0.18 reveal a set of oxygen‐derived deep levels, similar to those found in DEALO‐doped GaAs. These characteristic deep levels appear to remain at a relatively constant energy with respect to the valence band, as compared to the rapid decrease in the conduction band of InxGa1−xAs with x. © 1995 American Institute of Physics.
Show PACS
61.72.uj III-V and II-VI semiconductors
71.55.Eq III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close