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28 Aug 1995

Volume 67, Issue 9, pp. 1179-1334

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Hydrogen passivation of donors and acceptors in SiC

F. Gendron, L. M. Porter, C. Porte, and E. Bringuier

Appl. Phys. Lett. 67, 1253 (1995); http://dx.doi.org/10.1063/1.114388 (3 pages) | Cited 18 times

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The effect of hydrogen on donors (N) and acceptors (Al, B) in 6H‐SiC crystals has been evidenced by electron spin resonance and transport measurements. Typical passivation (i.e., complexing with H) levels of 75% have been obtained by annealing in a H2 atmosphere, and a corresponding decrease in free‐carrier density has been observed. © 1995 American Institute of Physics.
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61.72.up Other materials
71.55.Ht Other nonmetals

Dependence of electron effective mass on alloy composition of InAlGaAs lattice matched to InP studied by optically detected cyclotron resonance

Y. F. Chen, Y. T. Dai, J. C. Fan, T. L. Lee, and H. H. Lin

Appl. Phys. Lett. 67, 1256 (1995); http://dx.doi.org/10.1063/1.114389 (3 pages) | Cited 8 times

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The electron effective mass of InAlGaAs lattice matched to InP has been determined as a function of Al content. The electron effective mass is obtained from far‐infrared optically detected cyclotron resonance (ODCR). In ODCR, the carriers are provided by optical pumping, and hence no doping is necessary. Unlike previous reports, we are able to detect the cyclotron resonance signal of a thin intrinsic epilayer at low temperature. Thus corrections of nonparabolicity are not required. In addition, from photoluminescence measurement, we determine the band‐gap energy. Both the effective mass and band‐gap energy show a nonlinear variation with Al composition. © 1995 American Institute of Physics.
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71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
78.55.Cr III-V semiconductors
72.80.Ey III-V and II-VI semiconductors

Electron beam induced conductivity measurements on porous silicon based structures

V. Jasutis, I. Šimkienė, and A. Krotkus

Appl. Phys. Lett. 67, 1259 (1995); http://dx.doi.org/10.1063/1.114390 (3 pages) | Cited 1 time

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Electron beam induced conductivity measurement has been used for investigating the internal electrical field distribution in porous silicon based diode structures. Two carrier collection current peaks were found; one corresponding to the metal‐silicon contact region, the second to the interface between the porous and the single‐crystalline parts of the structure. It is shown that the latter peak is caused by the built‐in electrical field at the contact between silicon and the electrolyte remaining in the pores. © 1995 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

High mobility GaAs heterostructure field effect transistor for nanofabrication in which dopant‐induced disorder is eliminated

B. E. Kane, L. N. Pfeiffer, and K. W. West

Appl. Phys. Lett. 67, 1262 (1995); http://dx.doi.org/10.1063/1.114391 (3 pages) | Cited 27 times

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We have fabricated field effect transistors with undoped GaAs channels, undoped AlxGa1−xAs barriers, and either n+GaAs or epitaxial Al gates. Low resistance ohmic contacts are made separately to the gate and channel in samples with 250 Å barriers and in which the depth of the channel below the top surface is 900 Å. Because electrons in the channel are neutralized by conducting charge on the gate, they do not experience the dopant‐induced disorder inevitable in modulation doped structures. Electron mobility is above 106 cm2/V s, even when their Fermi wavelength exceeds 1000 Å, making these devices ideally suited for nanofabrication. © 1995 American Institute of Physics.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Threshold current temperature dependence of GaInP/(AlyGa1−y)InP 670 nm quantum well lasers

P. M. Smowton and P. Blood

Appl. Phys. Lett. 67, 1265 (1995); http://dx.doi.org/10.1063/1.114392 (3 pages) | Cited 6 times

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The temperature dependence of threshold current of (AlyGa1−y)InP/GaInP quantum well lasers (y=0.3, 0.4, and 0.5) has been investigated and used to characterize thermally activated loss mechanisms above room temperature. We show good agreement between activation energies measured by Arrhenius analysis and those expected for the loss of electrons from the well to the X‐conduction band minima in the barrier. Our analysis uses measured band gaps of the actual structures, avoiding assumptions about the alloy compositions, spontaneous emission data to subtract radiative and other direct gap processes, and recent band gap data for this alloy system. This provides convincing experimental confirmation of the loss of electrons from the indirect minima as the preferred process causing the rise in current at high temperature in these lasers. © 1995 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Resonant tunneling through ErAs semimetal quantum wells

D. E. Brehmer, Kai Zhang, Ch. J. Schwarz, S.‐P. Chau, S. J. Allen, J. P. Ibbetson, J. P. Zhang, C. J. Palmstrøm, and B. Wilkens

Appl. Phys. Lett. 67, 1268 (1995); http://dx.doi.org/10.1063/1.114393 (3 pages) | Cited 27 times

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Resonant tunneling is observed in double barrier resonant tunneling diodes with semimetallic ErAs quantum wells. Magnetic field dependence distinguishes two different resonant channels while the thickness dependence of the voltage for resonant tunneling strongly suggests that the electrons tunnel through hole states in the semimetal quantum well. © 1995 American Institute of Physics.
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73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Photovoltaic properties of a molecular semiconductor modulated by an exciton‐dissociating film

Brian A. Gregg

Appl. Phys. Lett. 67, 1271 (1995); http://dx.doi.org/10.1063/1.114394 (3 pages) | Cited 11 times

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A thin film containing an electron donor (tetraphenyl diamine) quenches the exciton fluorescence and substantially alters the photovoltaic properties of perylene bis(phenethylimide) cells. The film causes the open circuit photovoltage to shift positive by about 450 mV relative to cells without the film. In the case of silver back contacts, the presence of the film inverts the photovoltaic effect relative to that in the absence of the film, and causes the front electrode to become more photoactive than the back. These effects are interpreted as resulting from interfacial exciton dissociation rather than from junction formation. © 1995 American Institute of Physics.
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73.50.Pz Photoconduction and photovoltaic effects
73.61.Ph Polymers; organic compounds
84.60.Jt Photoelectric conversion

Improvement of hydrogenated amorphous silicon germanium alloys using low power disilane–germane discharges without hydrogen dilution

Akihisa Matsuda and Gautam Ganguly

Appl. Phys. Lett. 67, 1274 (1995); http://dx.doi.org/10.1063/1.114395 (3 pages) | Cited 6 times

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We suggest that the role of hydrogen dilution in the improvement of the quality of hydrogenated amorphous silicon germanium alloys is to alter the relative contribution of the short and long lifetime precursors to film growth which are deleterious and beneficient, respectively. In order to circumvent the preferential depletion of germane when mixed with silane, we have used low power disilane–germane discharges and thereby obtained films with an optical gap <1.5 eV having similar Urbach tail width and defect absorption, with and without hydrogen dilution. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Low resistance ohmic contact for p‐type ZnTe using Au electrode

Takeo Ohtsuka, Masashi Yoshimura, Katsuhiko Morita, Masataka Koyama, and Takafumi Yao

Appl. Phys. Lett. 67, 1277 (1995); http://dx.doi.org/10.1063/1.114396 (3 pages) | Cited 4 times

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We report low‐resistive Au ohmic contact for a molecular beam epitaxy grown nitrogen doped p‐type ZnTe (p‐ZnTe:N) layer with high thermal stability, where the p‐ZnTe surface is treated by oxygen plasma and HCl solution prior to Au film deposition. C contamination and native oxide layers of ZnTe are removed by oxygen plasma and HCl treatment, respectively, from the surface. As a result, a Te‐rich layer is formed on the surface. The annealing temperature dependence of specific contact resistance is investigated. The specific contact resistance of Au ohmic contact for p‐ZnTe:N with carrier concentration of 2×1018 cm−3 treated by oxygen plasma and HCl solution reaches as low as 5.8×10−6 Ω cm2 at an annealing temperature of 350 °C. This specific contact resistance value is the same as that of the reported Pd/(Pt)/Au contact for p‐ZnTe:N with carrier concentration of 3×1019 cm−3, and clearly shows higher thermal stability. © 1995 American Institute of Physics.
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73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts

Impact of Pb doping on the optical and electronic properties of ZnO powders

K. Vanheusden, W. L. Warren, J. A. Voigt, C. H. Seager, and D. R. Tallant

Appl. Phys. Lett. 67, 1280 (1995); http://dx.doi.org/10.1063/1.114397 (3 pages) | Cited 26 times

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Electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy have been combined to characterize Pb‐doped ZnO ceramic powders. We observe a decrease in the 2.26 eV emission peak and a concomitant smearing of the band edges, narrowing the effective gap of the grains to ≊2 eV with increasing lead content. Both phenomena are at least in part attributed to the formation of a separate PbO‐like phase, likely residing at the grain boundaries. The free‐carrier concentration in the grains was also observed to decrease with increasing Pb content. Our EPR results suggest that this may be due to electron transfer from oxygen vacancy donors to substitutional Pb centers, acting as electron traps. © 1995 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
71.55.Ht Other nonmetals
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

Step induced desorption of AsHx in atomic layer epitaxy on GaAs (001) vicinal substrates

Jeong‐Sik Lee, Sohachi Iwai, Hideo Isshiki, Takashi Meguro, Takuo Sugano, and Yoshinobu Aoyagi

Appl. Phys. Lett. 67, 1283 (1995); http://dx.doi.org/10.1063/1.114398 (3 pages) | Cited 2 times

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We investigate the growth rate of GaAs homoepitaxy on (001) just and vicinal substrates as a function of substrate temperature, feeding rate of source gases, and H2 purge duration during the atomic layer epitaxy (ALE) process. The desorption of AsHx (x=0, 1, 2) on vicinal surfaces during ALE was confirmed to be the migration of adsorbed AsHx molecules on the surface and desorption at the steps. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology

Island growth, strain, and interdiffusion in InAs1−xPx/InP heterostructures

D. J. Tweet, H. Matsuhata, R. Shioda, H. Oyanagi, and H. Kamei

Appl. Phys. Lett. 67, 1286 (1995); http://dx.doi.org/10.1063/1.114399 (3 pages) | Cited 7 times

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Using x‐ray diffraction and transmission electron microscopy we have found that InAs1−xPx films deposited on InP(001) substrates with organometallic vapor phase epitaxy grow in an unusual island growth mode characterized by large strain‐dependent interdiffusion. Initially, strong intermixing occurs, producing pseudomorphic islands of intermediate composition. These grow only until some point in the relaxation process, possibly a critical value of the strain, after which islands of the intended composition begin to appear. Furthermore, both types of islands are found to penetrate deeply into the substrate. © 1995 American Institute of Physics.  
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology

Excitonic emissions from CuInSe2 on GaAs(001) grown by molecular beam epitaxy

S. Niki, H. Shibata, P. J. Fons, A. Yamada, A. Obara, Y. Makita, T. Kurafuji, S. Chichibu, and H. Nakanishi

Appl. Phys. Lett. 67, 1289 (1995); http://dx.doi.org/10.1063/1.114400 (3 pages) | Cited 24 times

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CuInSe2 epitaxial films grown on (001)‐oriented GaAs substrates by molecular beam epitaxy have been characterized by means of low temperature photoluminescence spectroscopy at T=2–102 K. Distinct emission lines were observed near the band gap, and have been investigated further with varying sample temperature. An emission at 1.0386 eV (EX1) became broader with increasing sample temperature, and still remained up to T=102 K. A distinct, sharp emission at 1.0311 eV (IX1) which disappeared at a significantly lower temperature than the other peaks was observed only in films with weak donor‐related emissions. We attribute such emissions to the ground‐state free exciton [FEn=1] and exciton bound to neutral acceptor [A0,X], respectively. The band gap of CuInSe2 epitaxial films was also determined to be Eg=1.046 eV at 2 K using the reported exciton binding energy of Eex=7 meV. © 1995 American Institute of Physics.
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78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors

Photoluminescence study of the crossover from two‐dimensional to three‐dimensional growth for Ge on Si(100)

P. Schittenhelm, M. Gail, J. Brunner, J. F. Nützel, and G. Abstreiter

Appl. Phys. Lett. 67, 1292 (1995); http://dx.doi.org/10.1063/1.114401 (3 pages) | Cited 99 times

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Narrow Ge layers embedded in Si are investigated using photoluminescence (PL) spectroscopy. With increasing layer thickness a growth mode changeover from two‐dimensional (2D) strained‐layer growth to three dimensional Stranski–Krastanov growth is observed. Additional PL lines that are redshifted with respect to the PL signal of the 2D strained layers are attributed to islands formed by three‐dimensional growth. The occurrence of these new lines is accompanied by a blueshift of the PL of the 2D layers, indicating a strong Ge diffusion from the 2D layers towards the islands. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
78.55.Hx Other solid inorganic materials

Nanofabrication of thin chromium film deposited on Si(100) surfaces by tip induced anodization in atomic force microscopy

Dawen Wang, Liming Tsau, K. L. Wang, and Peter Chow

Appl. Phys. Lett. 67, 1295 (1995); http://dx.doi.org/10.1063/1.114402 (3 pages) | Cited 34 times

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Writing of nanostructures on thin metal films using atomic force microscopy (AFM) was demonstrated. The writing experiments were done in a nitrogen ambient having variable humidity. Using a p‐type heavily doped silicon AFM tip, a bias voltage was independently applied between the tip and the surface of a thin chromium layer deposited on a Si(100) substrate. Protruded patterns of various shapes were formed only on the water‐adsorbed chromium surface when applying a negative bias on the tip. Their sizes were found to be dependent on the writing time, the bias voltage, and the humidity. The smallest feature size obtained is about 20 nm. From Auger electron spectroscopy (AES) analysis, the products are shown to be Cr oxides. The surface modification mechanism appears to be tip‐induced local oxidation, i.e., anodization. © 1995 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.05.Bx Metals, semimetals, and alloys
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

On p‐type doping in GaN—acceptor binding energies

S. Fischer, C. Wetzel, E. E. Haller, and B. K. Meyer

Appl. Phys. Lett. 67, 1298 (1995); http://dx.doi.org/10.1063/1.114403 (3 pages) | Cited 127 times

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Photoluminescence investigations on undoped n‐type GaN layers grown on 6H‐SiC and sapphire reveal the presence of residual acceptors with a binding energy of 230 meV. Their presence in high temperature vapor phase epitaxy grown layers is strongly correlated with the graphite susceptor containing the Ga. Mg as a contamination can be ruled out. In metal organic vapor phase epitaxially grown layers, the metal organic are probably the source of the carbon contamination. It is concluded that carbon on nitrogen sites introduces the most shallow acceptor in GaN. The experimental observations are supported by an estimate of the acceptor binding energy using effective‐mass‐theory. © 1995 American Institute of Physics.
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71.55.Eq III-V semiconductors
61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Lateral band gap modulation by controlled elastic relaxation of strained multiquantum well structures on InP

J. L. Leclercq, P. Viktorovitch, X. Letartre, M. F. Nuban, M. Gendry, T. Benyattou, G. Guillot, G. Fierling, and C. Priester

Appl. Phys. Lett. 67, 1301 (1995); http://dx.doi.org/10.1063/1.114404 (3 pages) | Cited 5 times

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We describe a method of lateral band gap modulation by creating steep lateral strain gradients in multiquantum (MQW) structures on InP. The strain modulation is obtained by controlled elastic relaxation of micromachined free‐standing strained MQW stacks. Large lateral energy modulation is achieved, suitable for lateral optical mode confinement and lateral quantum confinement of excitons. It is pointed out that this technology can be applied in monolithic integration of semiconductor optical devices. © 1995 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Quantum limited heterodyne detection in superconducting non‐linear transmission lines at sub‐millimeter wavelengths

Cheuk‐yu Edward Tong, Raymond Blundell, Bruce Bumble, Jeffrey A. Stern, and Henry G. LeDuc

Appl. Phys. Lett. 67, 1304 (1995); http://dx.doi.org/10.1063/1.114405 (3 pages) | Cited 22 times

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A non‐linear superconducting transmission line has been successfully employed in heterodyne detection of sub‐millimeter waves. In our experiments an Nb/Al/AlOx/Nb tunnel junction, measuring 0.15×40 μm, with a critical current density of about 2500 A/cm2 is used as a distributed mixer element. We have demonstrated that quantum limited sensitivity can be achieved with this type of device. At 460 GHz, a Y‐factor of 2.5 has been recorded, corresponding to a double‐side‐band receiver noise temperature of 80 K. The double‐side‐band conversion loss is about 1 dB and the mixer noise temperature is estimated to be 18(±10) K. © 1995 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
74.50.+r Tunneling phenomena; Josephson effects

Flicker noise in  YBa2Cu3O7−δ  bicrystal grain boundary junctions in weak magnetic fields

Charles Surya, N. E. Israeloff, A. Widom, R. Seed, and C. Vittoria

Appl. Phys. Lett. 67, 1307 (1995); http://dx.doi.org/10.1063/1.114522 (3 pages)

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Flicker noise in c‐axis oriented long YBCO bicrystal grain boundary junctions was characterized as a function of temperature, biasing conditions, and magnetic field applied perpendicular to the a–b plane over a wide range of temperatures from 15 K to over 70 K. Aperiodic variations, as a function of magnetic field, were observed in both the junction voltages, VJ, and the flicker noise magnitude under constant current bias as the magnetic field was scanned from 0 to 8 G. The noise magnitudes were found to peak at the minima of VJ. Analyses of the field dependencies of the magnitudes and the functional form of the voltage noise power spectra show that the noise did not arise from thermally activated flux motion. Based on the dependencies of the noise power spectra on the bias current and the dynamic resistance of the junction, we conclude that the noise originates from the fluctuations of the critical current of the devices most likely due to trapping of carriers or defect motion within the grain boundary. © 1995 American Institute of Physics.
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74.40.-n Fluctuation phenomena
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.50.+r Tunneling phenomena; Josephson effects

Superconductivity in epitaxial films of the oxycarbonate Sr2CuO2(CO3) converted from ‘‘infinite layer’’ SrCuO2 by thermal processing

R. Feenstra, J. D. Budai, D. K. Christen, and T. Kawai

Appl. Phys. Lett. 67, 1310 (1995); http://dx.doi.org/10.1063/1.114523 (3 pages) | Cited 3 times

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The conversion of semiconductive SrCuO2 ‘‘infinite layer’’ epitaxial films into a metallic and superconducting (Tc≂30 K) oxycarbonate phase related to Sr2CuO2(CO3) has been induced by thermal processing in oxidizing ambient containing a small amount of CO2. Ion beam analysis using the resonant 12C(p,p)12C elastic backscattering cross section for protons incident at 1.73 MeV confirms the presence of substitutional C in the converted perovskite lattice. Comparison of the threshold CO2 partial pressure with thermodynamic stability data for SrCO3 suggests that the conversion is initiated by the high affinity of Sr(O) for CO2. © 1995 American Institute of Physics.
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74.72.-h Cuprate superconductors
81.20.-n Methods of materials synthesis and materials processing

Magnetoresistance probe of spatial current variations in high‐Tc YBa2Cu3O7–SrRuO3–YBa2Cu3O7 Josephson junctions

S. C. Gausepohl, Mark Lee, L. Antognazza, and K. Char

Appl. Phys. Lett. 67, 1313 (1995); http://dx.doi.org/10.1063/1.114524 (3 pages) | Cited 15 times

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The low frequency current–voltage characteristics of YBa2Cu3O7–SrRuO3–YBa2Cu3O7 Josephson junctions show an increasing resistance and phase shift in fields of 0 to 8 T. A critical current is also evident up to 8 T. Data are analyzed in terms of field‐induced perturbations of the current paths through the junction. Results indicate a highly inhomogeneous interface where the mean width of spatial variations in both normal and supercurrent is of order 50 to 100 Å. © 1995 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
74.45.+c Proximity effects; Andreev reflection; SN and SNS junctions

Single‐crystal magnetic metal films on GaAs grown by electrodeposition

R. Hart, P. A. Midgley, A. Wilkinson, and W. Schwarzacher

Appl. Phys. Lett. 67, 1316 (1995); http://dx.doi.org/10.1063/1.114525 (3 pages) | Cited 13 times

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Large area (0.8 cm2) single‐crystal films ∼1 μm thick of Ni–Cu alloy have been electrodeposited directly onto (100) n‐type GaAs. The epitaxial relationship was found to be (001) Ni–Cu parallel to (001) GaAs and [110] Ni–Cu parallel to [100] GaAs. Magnetic measurements show the films to be ferromagnetic. © 1995 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Pq Electrodeposition, electroplating
75.70.-i Magnetic properties of thin films, surfaces, and interfaces

Feasibility of ultratrace detection of CO in cryogenic liquids using infrared excitation

M. L. Turnidge and C. J. S. M. Simpson

Appl. Phys. Lett. 67, 1319 (1995); http://dx.doi.org/10.1063/1.114526 (3 pages)

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CO has been detected down to 500 parts per trillion by volume using infrared excitation of CO dissolved in liquid Ar solution with laser induced fluorescence detection. The feasibility of the in situ detection of trace concentrations of atmospheric and industrial pollutants dissolved in liquid air is discussed. © 1995 American Institute of Physics.
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07.88.+y Instruments for environmental pollution measurements
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
33.50.Dq Fluorescence and phosphorescence spectra

Nucleation and growth of diamond films on aluminum nitride coated nickel

V. P. Godbole, K. Jagannadham, and J. Narayan

Appl. Phys. Lett. 67, 1322 (1995); http://dx.doi.org/10.1063/1.114527 (3 pages) | Cited 14 times

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We have studied nucleation and growth characteristics of diamond on nickel with AlN buffer layers. The diamond deposits on partially filled 3‐d shell transition metals such as Ni, Fe, and Co usually result in the formation of interposing graphite layers which cause poor adhesion of diamond overlayers. To minimize and preferably eliminate the formation of the interposing graphite layer, we coated nickel substrate with ∼1000 Å thick AlN layer by using pulsed laser deposition and subsequently, subjected them to diamond deposition by hot filament chemical vapor deposition method. It is found that the aluminum nitride layer plays a crucial role in limiting carbon diffusion and inhibiting the formation of graphitic carbon and simultaneously enhancing the nucleation and adhesion of diamond phase. © 1995 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

The role of film re‐emission and gas scattering processes on the stoichiometry of laser deposited films

J. Gonzalo, C. N. Afonso, and J. Perrière

Appl. Phys. Lett. 67, 1325 (1995); http://dx.doi.org/10.1063/1.114528 (3 pages) | Cited 18 times

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Laser ablation of a BiSrCaCuO target is performed both in vacuum and in an oxygen pressure of 0.1 mbar. Two substrates are located in the chamber in order to study the role of re‐emission processes from the growing film and/or the scattering of the ablated species by an oxygen atmosphere. The results indicate that re‐emission processes from the growing film are very weak (they may affect up to 1% of the deposited material at most) and are not related to the re‐sputtering of the growing film. Films grown in vacuum are found to have the correct cation composition, whereas those grown in an oxygen environment show significant variations which are clearly related to gas scattering processes. © 1995 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
74.78.-w Superconducting films and low-dimensional structures
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