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28 Aug 1995

Volume 67, Issue 9, pp. 1179-1334

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Electron field emission from diamond and other carbon materials after H2, O2, and Cs treatment

M. W. Geis, J. C. Twichell, J. Macaulay, and K. Okano

Appl. Phys. Lett. 67, 1328 (1995); http://dx.doi.org/10.1063/1.114529 (3 pages) | Cited 217 times

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This letter reports, diamond field emitters, Cs treated, air stable, that emit electrons at the lowest reported field, <0.2 V μm−1. Field emission from B‐, Li‐, P‐, and N‐doped diamonds and carbonized polymer was characterized as a function of surface treatment. A treated with an O2 plasma, coated with Cs, heated, and exposed to O2 exhibited increased emission for all samples except for B‐doped diamond. The best emission was obtained from N‐doped diamond samples, followed by carbonized polymer, the Li‐doped, and polycrystalline P‐doped diamond. Li‐ and N‐doped samples treated with Cs were stable in laboratory air for several days. This stability of the surface‐activated diamond is believed to be due to the formation of a diamond–O–Cs salt. If the sample is treated with a H2 plasma instead of an O2 plasma, the Cs‐enhanced emission degrades with heat and exposure to O2. Subbands formed by Li and N impurities are believed to be responsible for this enhanced emission. The surface treatment on N‐doped diamond results in emission at fields as low as 0.2 V μm−1. © 1995 American Institute of Physics.
Show PACS
79.70.+q Field emission, ionization, evaporation, and desorption
73.20.Hb Impurity and defect levels; energy states of adsorbed species
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Comment on ‘‘Mechanism responsible for the semi‐insulating properties of low‐temperature‐growth GaAs’’ [Appl. Phys. Lett. 65, 3002 (1994)]

M. R. Melloch and J. M. Woodall

Appl. Phys. Lett. 67, 1331 (1995); http://dx.doi.org/10.1063/1.114530 (2 pages) | Cited 3 times

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Abstract Unavailable
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72.80.Ey III-V and II-VI semiconductors
71.55.Eq III-V semiconductors
61.72.J- Point defects and defect clusters
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Response to ‘‘Comment on ‘Mechanism responsible for the semi‐insulating properties of low‐temperature‐grown GaAs’ ’’ [Appl. Phys. Lett. 67, 1331 (1995)]

X. Liu, A. Prasad, W. M. Chen, A. Kurpiewski, A. Stoschek, Z. Liliental‐Weber, and E. R. Weber

Appl. Phys. Lett. 67, 1333 (1995); http://dx.doi.org/10.1063/1.114531 (2 pages) | Cited 4 times

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Abstract Unavailable
Show PACS
72.80.Ey III-V and II-VI semiconductors
71.55.Eq III-V semiconductors
61.72.J- Point defects and defect clusters
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