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4 Mar 1996

Volume 68, Issue 10, pp. 1311-1435

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Demonstration of the formation of four‐wave mixing interaction regions in a high‐efficiency mutually pumped phase conjugator

Liangmin Zhang, Jingwen Zhang, Zongshu Shao, Xiaodong Mu, Huanchu Chen, and Minhua Jiang

Appl. Phys. Lett. 68, 1311 (1996); http://dx.doi.org/10.1063/1.115918 (3 pages)

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We show a mutually pumped phase conjugator with a high coupling efficiency in a novel crystal of copper‐doped potassium sodium strontium barium niobate. A twisting around of one another and self‐curving coupling channel is observed. A theory is developed to simulate the coupling channel. The shape of curved trajectories has also been calculated. We verify that one, two, three, and more four wave mixing interaction regions exist in photorefractive bridge mutually pumped phase conjugators with the simulations. The calculated results are essentially consistent with our experimental observations, and they may be used in other photorefractive phase conjugators after making a modification. © 1996 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Transient photovoltaic properties in Al/tin‐phthalocyanine/indium–tin–oxide sandwich cell

Yong‐Le Pan, Ling‐Bing Chen, Yan Wang, You‐Yuan Zhao, Fu‐Ming Li, A. Wagiki, M. Yamashita, and T. Tako

Appl. Phys. Lett. 68, 1314 (1996); http://dx.doi.org/10.1063/1.115919 (3 pages) | Cited 4 times

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The intensity dependence of the transient photovoltaic response in the nanosecond region and the spectral dependence of the continuous wave (cw) photovoltaic response in Al/α‐SnPc/ITO sandwich cell have been reported. The cw photovoltaic action spectrum is similar to the absorption spectrum. The magnitude, polarity, and response time of the transient photovoltage are found to be dependent on the intensity and wavelength of the incident light, which offers a potential application in the area of light‐controlled nonlinear optoelectronic detectors. © 1996 American Institute of Physics.
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73.50.Pz Photoconduction and photovoltaic effects
78.47.-p Spectroscopy of solid state dynamics
78.66.Qn Polymers; organic compounds

Intensity scan and two photon absorption and nonlinear refraction of C60 in toluene

Bahman Taheri, Huimin Liu, B. Jassemnejad, D. Appling, Richard C. Powell, and J. J. Song

Appl. Phys. Lett. 68, 1317 (1996); http://dx.doi.org/10.1063/1.115920 (3 pages) | Cited 17 times

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A single beam technique is introduced to determine the magnitude and sign of third order nonlinear optical coefficients of materials using intensity dependence of the complex refractive index. It is applicable to a large range of materials including those with a low damage threshold such as polymers and absorbing glasses. It is used to determine the two photon absorption and nonlinear refraction coefficients of C60 in toluene. Concentration dependence of the nonlinear optical coefficients results in second hyperpolarizabilities of 10−31 (esu) for C60. © 1996 American Institute of Physics.
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42.65.-k Nonlinear optics
78.66.Tr Fullerenes and related materials

Huge birefringence in selectively oxidized GaAs/AlAs optical waveguides

A. Fiore, V. Berger, E. Rosencher, N. Laurent, S. Theilmann, N. Vodjdani, and J. Nagle

Appl. Phys. Lett. 68, 1320 (1996); http://dx.doi.org/10.1063/1.115921 (3 pages) | Cited 29 times

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Selective wet oxidation of AlAs was used to obtain huge birefringence in GaAs/AlAs optical waveguides. A single polarization waveguide was obtained by oxidizing an AlAs layer buried in a GaAs guiding layer. The TM mode is below cutoff due to the high index contrast between the layers. Applications to phase matching in nonlinear optical conversion are envisaged. © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Fm Birefringence

Domain structure and phase transitions in epitaxial KNbO3 thin films studied by in situ second harmonic generation measurements

Venkatraman Gopalan and Rishi Raj

Appl. Phys. Lett. 68, 1323 (1996); http://dx.doi.org/10.1063/1.115922 (3 pages) | Cited 36 times

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Epitaxial thin films of KNbO3  were deposited on SrTiO3 (100) substrate by laser ablation. In the orthorhombic phase, the four possible domain variants in the KNbO3 (110) film growth plane were determined to be KNbO3[110]∥SrTiO3[001], [001], [010], and [010] denoted as X+, X−, Y+, and Y−, respectively. Using a fundamental beam of 1064 nm transmitted normal to the film, the second harmonic generation (SHG) signal at 532 nm was measured and correlated to the area fractions AX+, AX−, AY+, and AY− of the four domain variants X+, X−, Y+, and Y−, respectively, in the growth plane of the film. At room temperature, the area fractions δAx=AX+−AX− and δAy=AY+−AY− were determined to be ∼3.3% and ∼2.2%, respectively. In‐situ SHG measurements revealed the phase transitions to be 210±10 °C for orthorhombic–tetragonal and 450±10 °C for tetragonal–cubic transitions. In the tetragonal phase (between 210 °C and 450 °C) the KNbO3 〈100〉∥SrTiO 3 〈100〉. The use of SHG as a sensitive, non‐destructive and real‐time probe of phase transitions and evolution of domains in ferroelectric thin films is demonstrated. © 1996 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Intense second harmonic generation and long‐range structural ordering in thin films of an organic salt grown by organic vapor phase deposition

S. R. Forrest, P. E. Burrows, A. Stroustrup, D. Strickland, and V. S. Ban

Appl. Phys. Lett. 68, 1326 (1996); http://dx.doi.org/10.1063/1.115923 (3 pages) | Cited 13 times

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We discuss the growth of thin films of the organic salt, 4′‐dimethylamino‐N‐methyl‐4‐stilbazolium tosylate (DAST) by the novel process of organic vapor phase deposition (OVPD). These films show long‐range structural ordering and very intense second harmonic generation efficiencies (SHG) significantly greater (when normalized for thickness) than that of randomly oriented pure DAST powders. This is the first demonstration of such intense SHG radiation and long‐range ordering for a thin film sample of a nonlinear organic salt. Furthermore, this work suggests that OVPD represents a general technique for growing thin films of highly polar, nonlinear optical materials such as DAST. © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Jk Polymers and organics
78.66.Qn Polymers; organic compounds

Atomic force and optical near‐field microscopic investigations of polarization holographic gratings in a liquid crystalline azobenzene side‐chain polyester

P. S. Ramanujam, N. C. R. Holme, and S. Hvilsted

Appl. Phys. Lett. 68, 1329 (1996); http://dx.doi.org/10.1063/1.115924 (3 pages) | Cited 93 times

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Atomic force and scanning near‐field optical microscopic investigations have been carried out on a polarization holographic grating recorded in an azobenzene side‐chain liquid crystalline polyester. It has been found that immediately following laser irradiation, a topographic surface grating structure appears. The time development of the grating structure was followed by atomic force microscopy for 20 h by repeatedly scanning the same area of the film. The grating structure disappears after a few hours and a pronounced increase of surface roughness has been found to take place. A near‐field optical microscopic scanning of the grating reveals, however, that the bulk of the film remains optically anisotropic. © 1996 American Institute of Physics.
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42.40.-i Holography
42.70.Df Liquid crystals

Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μm

S. R. Kurtz, R. M. Biefeld, A. A. Allerman, A. J. Howard, M. H. Crawford, and M. W. Pelczynski

Appl. Phys. Lett. 68, 1332 (1996); http://dx.doi.org/10.1063/1.115925 (3 pages) | Cited 34 times

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A pseudomorphic, compressively strained InAs0.94Sb0.06 multiple quantum well injection laser, emitting in the 3.5–3.6 μm range is reported. The device was grown by metalorganic chemical vapor deposition, and x‐ray and optical characterization indicate that the active region has a very low dislocation density. In pulsed mode, the laser operated at 135 K and displayed a characteristic temperature of 33 K, equaling the highest value reported for molecular‐beam epitaxy grown, InAsSb/InAlAsSb active region lasers of comparable wavelength. Factors limiting the performance of these lasers are discussed. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Point contact ultrasonic transducer of waveguiding structure for high‐frequency operation

Ken Yamada and Butrus T. Khuri‐Yakub

Appl. Phys. Lett. 68, 1335 (1996); http://dx.doi.org/10.1063/1.115926 (3 pages)

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This letter presents a new type of Hertzian‐contact transducer of waveguiding structure operating in the MHz range. The transducer is composed of a fused quartz tube and a radially‐polarized annular piezoelectric element bonded to one of its ends. The edge‐bonded shear‐wave transducer effectively excites a surface wave on the interior surface of the tube. A small bullet pin made of quartz is inserted and fixed on the other end of the tube to make a point contact and transmit the wave energy to a specimen to be inspected. Using a pair of these transducers, we have succeeded in exciting and detecting surface acoustic waves as well as Lamb waves in the 3 MHz frequency range. © 1996 American Institute of Physics.
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43.35.Pt Surface waves in solids and liquids
43.35.Yb Ultrasonic instrumentation and measurement techniques
43.38.Ar Transducing principles, materials, and structures: general
43.40.Le Techniques for nondestructive evaluation and monitoring, acoustic emission

Soft x‐ray emission from plasmas produced by ultraintense KrF‐laser pulses in colloidal Al

C. Wülker, W. Theobald, D. R. Gnass, F. P. Schäfer, J. S. Bakos, R. Sauerbrey, S. P. Gordon, and R. W. Falcone

Appl. Phys. Lett. 68, 1338 (1996); http://dx.doi.org/10.1063/1.115927 (3 pages) | Cited 1 time

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The interaction of subpicosecond KrF‐laser pulses with polished and colloidal metal surfaces at an intensity of 8×1015 W/cm2 was investigated experimentally. The measurements with spectral and temporal resolution for the colloidal targets showed a higher energy conversion efficiency into soft x rays and an increase in x‐ray pulse lengths. © 1996 American Institute of Physics.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.38.-r Laser-plasma interactions
52.59.Ye Plasma devices for generation of coherent radiation

Effects of electron mass anisotropy on Hall factors in 6H‐SiC

G. D. Chen, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 68, 1341 (1996); http://dx.doi.org/10.1063/1.115928 (3 pages) | Cited 7 times

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The room temperature Hall factors in 6H‐SiC have been measured under different magnetic fields. It is found that the Hall coefficient RH increases with magnetic field, implying a Hall factor of less than one at zero magnetic field. This behavior has been accounted for by a model based on electron mass anisotropy in 6H‐SiC. The Hall factor results show that in 6H‐SiC the mass along the c direction is a factor of 5 larger than that in the transverse direction and that the electron–phonon scattering time is aobut 1 ps at room temperature, which is consistent with a recent optically detected resonance spectroscopy measurement. Our results indicate that the Hall measurement can be utilized as an effective and simple method for studying scattering mechanisms as well as for determining anisotropic transport properties in SiC and that a correction of the Hall factor is necessary in order to determine the carrier concentration and mobility accurately. © 1996 American Institute of Physics.
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71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
72.20.My Galvanomagnetic and other magnetotransport effects

Effect of electrode microstructure on leakage current in lead–lanthanum–zirconate–titanate multilayer capacitors

P. S. Asoka Kumar, B. Panda, S. K. Ray, B. K. Mathur, D. Bhattacharya, and K. L. Chopra

Appl. Phys. Lett. 68, 1344 (1996); http://dx.doi.org/10.1063/1.115929 (3 pages) | Cited 5 times

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Lead–lanthanum–zirconate–titanate (PLZT) multilayer capacitors involving platinum bottom electrodes have been fabricated on a silicon nitride/silicon (SiN/Si) substrate system. Leakage current characteristics show strong dependence on the processing temperature of the bottom electrode. A drop in leakage current by five orders of magnitude has been observed for capacitor with platinum electrode deposited at room temperature. Scanning tunneling microscopy (STM) studies reveal significant differences in the microstructure of platinum films deposited at different substrate temperatures. Based on STM results, a correlation between the microstructure of the bottom electrode, space layer at PLZT/Pt interface, and the nucleation of PLZT has been suggested to explain this new observation. © 1996 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Preparation of perovskite conductive LaNiO3 films by metalorganic decomposition

Aidong Li, Chuanzhen Ge, Peng Lü, and Naiben Ming

Appl. Phys. Lett. 68, 1347 (1996); http://dx.doi.org/10.1063/1.115930 (3 pages) | Cited 28 times

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Perovskite conductive LaNiO3 films, 250 nm thick, were prepared by metalorganic decomposition. Rutherford backscattering spectrometry was used to determine the film thickness and composition. The x‐ray diffraction patterns of LaNiO3 films indicated that the lowest temperature for crystallization is about 530 °C. The measurement of resistivity as a function of annealing temperatures showed that the good metallic conductive LaNiO3 films could be obtained at 550 °C. The films with the lowest resistivity (4.0×10−4 Ω cm) were obtained on quartz by annealing in oxygen at 700 °C. © 1996 American Institute of Physics.
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73.61.-r Electrical properties of specific thin films
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Direct integration of ferroelectric La–Sr–Co–O/Pb–Nb–Zr–Ti–O/La–Sr–Co–O capacitors on silicon with conducting barrier layers

A. M. Dhote, S. Madhukar, W. Wei, T. Venkatesan, R. Ramesh, and C. M. Cotell

Appl. Phys. Lett. 68, 1350 (1996); http://dx.doi.org/10.1063/1.115931 (3 pages) | Cited 16 times

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The growth of a polycrystalline La–Sr–Co–O/Pb–Nb–Zr–Ti–O/La–Sr–Co–O ferroelectric capacitor heterostructure is demonstrated on platinized conducting barrier layers of TiN/poly‐Si/Si substrate for integration into high density nonvolatile memory (HDNVM). The concept of conducting bottom layers allows the realization of three‐dimensional stacked capacitor‐transistor geometry with a direct contact to the memory capacitor, occupying significantly less area on the chip required for HDNVM application. The growth of the ferroelectric heterostructure is achieved at a low temperature of 500–550 °C, compatible with existing Si based technology, without losing the structural and phase integrity of the ferroelectric stack and conducting bottom layers. The fatigue‐free characteristics up to 1011 cycles at room temperature and 100 °C, imprint test and good retaining capability evaluated on these capacitors prove their suitability for HDNVM devices. © 1996 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Generation of terahertz acoustic‐phonon signals by heated electrons in AlxGa1−xAs/GaAs‐based quantum wires

W. Xu

Appl. Phys. Lett. 68, 1353 (1996); http://dx.doi.org/10.1063/1.116077 (3 pages) | Cited 9 times

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A detailed theoretical study that explores the possibility to apply AlxGa1−xAs/GaAs‐based quantum wire systems to terahertz (THz) ultrasonic generator is presented. The THz ultrasound can be generated through generating the acoustic phonons by heated electrons in these structures. Taking into account the generation of acoustic phonons via deformation potential and piezoelectric coupling, the frequency and angular distribution of the acoustic‐phonon emission can be obtained. The theoretical results indicate that: (i) AlxGa1−xAs/GaAs‐based quantum wires are suitable for generating THz acoustic‐phonon signals; (ii) both longitudinal and transverse phonon modes contribute to the detected phonon signals; and (iii) the THz acoustic phonons can be generated from both intra‐ and intersubband scattering processes. © 1996 American Institute of Physics.
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63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics

Photoluminescence study of ZnSe single crystals grown by solid‐phase recrystallization

E. Tournié, C. Morhain, G. Neu, J.‐P. Faurie, R. Triboulet, and J. O. Ndap

Appl. Phys. Lett. 68, 1356 (1996); http://dx.doi.org/10.1063/1.116078 (3 pages) | Cited 23 times

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We investigate through low‐temperature photoluminescence (PL) and selective photoluminescence (SPL) spectroscopies, ZnSe single crystals grown by solid‐phase recrystallization. The PL spectra are dominated by the so‐called I1deep excitonic line, a neutral–acceptor bound–exciton line I1, the free‐exciton emission FX, and the n=2 excited state of FX. We identify the main residual impurities. Donor–acceptor pair bands are hardly detected. A major characteristic of these samples is the quasiabsence of any Cu‐related deep emission which generally plagues the PL spectra of bulk ZnSe. Consequently, I1deep is ascribed to an exciton bound to Zn‐vacancies related acceptors. Our results indicate that these ZnSe samples are of high quality and that solid‐phase recrystallization is a promising technique to prepare ZnSe epitaxial substrates. © 1996 American Institute of Physics.
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71.35.-y Excitons and related phenomena
71.55.Gs II-VI semiconductors
78.55.Et II-VI semiconductors

Miniaturization of p ‐Ge lasers: Progress toward continuous wave operation

E. Bründermann, A. M. Linhart, H. P. Röser, O. D. Dubon, W. L. Hansen, and E. E. Haller

Appl. Phys. Lett. 68, 1359 (1996); http://dx.doi.org/10.1063/1.116079 (3 pages) | Cited 15 times

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We have observed intervalence band laser action in Al‐doped germanium crystals with volumes as small as 0.03 cm3, one order of magnitude smaller than previously studied p‐Ge laser crystals. A duty cycle of 1.5×10−4 was achieved. We show evidence that crystal heating plays a key role in the duration of the emission pulse and have measured a maximum pulse length of 11 μs for a 0.43 cm3, Ga‐doped germanium crystal. Such progress in the understanding and performance of p‐Ge hot hole lasers marks a significant step toward continuous wave operation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Deep levels in the upper band‐gap region of lightly Mg‐doped GaN

P. Hacke, H. Nakayama, T. Detchprohm, K. Hiramatsu, and N. Sawaki

Appl. Phys. Lett. 68, 1362 (1996); http://dx.doi.org/10.1063/1.116080 (3 pages) | Cited 59 times

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Deep levels in undoped and weakly Mg‐doped n‐type GaN films fabricated by metalorganic chemical vapor deposition were examined with deep level transient spectroscopy. Deep levels measured at 0.26 and 0.62 eV below the conduction band were found in relatively low concentrations of ∼2×1013 cm−3 in undoped GaN. Addition of small quantities of the Mg acceptor species by means of bis‐cyclopentadienyl magnesium (Cp2Mg) during growth corresponded to a significant increase in the concentration of the level at 0.62 eV. The concentration of the shallower level, found to be independent of the Cp2Mg addition, remained unchanged. These deep levels may detrimentally affect optical and electrical properties when fabricating p‐type GaN. © 1996 American Institute of Physics.
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71.55.Eq III-V semiconductors

Effect of hydrogen passivation on Be‐doped AlGaAs/GaAs quantum wells

I. A. Buyanova, A. C. Ferreira, P. O. Holtz, B. Monemar, K. Campman, J. L. Merz, and A. C. Gossard

Appl. Phys. Lett. 68, 1365 (1996); http://dx.doi.org/10.1063/1.116081 (3 pages) | Cited 6 times

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Hydrogen passivation of high quality AlGaAs/GaAs:Be quantum wells (QWs) is studied by photoluminescence (PL) spectroscopy. The interaction of hydrogen with both Be dopants and QW interfaces is analyzed. The efficiency of Be acceptor passivation by hydrogen is shown to be dependent on the Be concentration. By comparing the PL spectra of the QW structures with different doping level, before and after hydrogenation, a partial (up to 50%) deactivation of Be atoms is revealed. It is also shown that a prolonged hydrogenation strongly degrades the interface sharpness, presumably due to hydrogen‐enhanced intermixing. © 1996 American Institute of Physics.
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71.55.Eq III-V semiconductors
78.55.Cr III-V semiconductors

Source of Ge centers in AlGaAs grown by organometallic vapor phase epitaxy and the effect of impurity getters

Wei‐I Lee

Appl. Phys. Lett. 68, 1368 (1996); http://dx.doi.org/10.1063/1.116082 (3 pages)

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A long term and comprehensive study has been performed to identify the origin of the Ge center in AlGaAs grown by organometallic vapor phase epitaxy. With a series of deductive investigations, AsH3 gas has been undoubtedly identified as the source of the Ge contamination. Depending on the AsH3 quality, one to two orders of magnitude of difference in Ge trap densities has been observed. Long‐term observations indicate fairly constant Ge content throughout most of the AsH3 tank lifetime. Different impurity getters were attempted to remove the Ge contaminant. While most getters can eliminate the oxygen‐related defects in AlGaAs, no getters were able to remove the Ge DX center. © 1996 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN

X. H. Wu, D. Kapolnek, E. J. Tarsa, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. DenBaars, and J. S. Speck

Appl. Phys. Lett. 68, 1371 (1996); http://dx.doi.org/10.1063/1.116083 (3 pages) | Cited 98 times

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The structure and morphology of low growth temperature GaN nucleation layers have been studied using atomic force microscopy (AFM), reflection high energy electron diffraction (RHEED), and transmission electron microscopy (TEM). The nucleation layers were grown at 600 °C by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) on c‐plane sapphire. The layers consist of predominantly cubic GaN (c‐GaN) with a high density of stacking faults and twins parallel to the film/substrate interface. The average grain size increases with increasing layer thickness and during the transition from low temperature (600 °C) to the high temperatures (1080 °C) necessary for the growth of device quality GaN. Upon heating to 1080 °C the nucleation layer partially converts to hexagonal GaN (h‐GaN) while retaining a high stacking fault density. The mixed cubic‐hexagonal character of the nucleation layer region is sustained after subsequent high‐temperature GaN growth. © 1996 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Narrow‐band electroluminescence at 3.5 μm from impact excitation and ionization of Fe2+ ions in InP

Gaetano Scamarcio, Federico Capasso, Albert L. Hutchinson, Tawee Tanbun‐Ek, Deborah Sivco, and Alfred Y. Cho

Appl. Phys. Lett. 68, 1374 (1996); http://dx.doi.org/10.1063/1.116084 (3 pages) | Cited 5 times

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Electroluminescence associated with impact excitation and ionization of deep metallic impurities, enhanced by the presence of high electric field domains in semiconductors, is reported. A large and abrupt increase of midinfrared (λ≊3.5 μm) electroluminescence is observed at cryogenic temperatures above the onset for the transferred‐electron effect in n‐type InP doped with Fe. Optical powers up to 40 nW have been measured. At 5 K the spectrum is dominated by a set of sharp lines corresponding to the symmetry allowed d‐shell transitions of Fe2+ ions. © 1996 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.60.Fi Electroluminescence

A silicon nanocrystals based memory

Sandip Tiwari, Farhan Rana, Hussein Hanafi, Allan Hartstein, Emmanuel F. Crabbé, and Kevin Chan

Appl. Phys. Lett. 68, 1377 (1996); http://dx.doi.org/10.1063/1.116085 (3 pages) | Cited 806 times

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A new memory structure using threshold shifting from charge stored in nanocrystals of silicon (≊5nm in size) is described. The devices utilize direct tunneling and storage of electrons in the nanocrystals. The limited size and capacitance of the nanocrystals limit the numbers of stored electrons. Coulomb blockade effects may be important in these structures but are not necessary for their operation. The threshold shifts of 0.2–0.4 V with read and write times less than 100’s of a nanosecond at operating voltages below 2.5 V have been obtained experimentally. The retention times are measured in days and weeks, and the structures have been operated in an excess of 109 cycles without degradation in performance. This nanomemory exhibits characteristics necessary for high density and low power. © 1996 American Institute of Physics.
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73.23.-b Electronic transport in mesoscopic systems
85.35.Gv Single electron devices

Scanning tunneling microscopy and tunneling luminescence of the surface of GaN films grown by vapor phase epitaxy

B. Garni, Jian Ma, N. Perkins, Jutong Liu, T. F. Kuech, and M. G. Lagally

Appl. Phys. Lett. 68, 1380 (1996); http://dx.doi.org/10.1063/1.116086 (3 pages) | Cited 25 times

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We report scanning tunneling microscopy (STM) images of surfaces of GaN films and the observation of luminescence from those films induced by highly spatially localized injection of electrons or holes using STM. This combination of scanning tunneling luminescence with STM for GaN surfaces and the ability to observe both morphology and luminescence in GaN is the first step to investigate possible correlations between surface morphology and optical properties. © 1996 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
78.60.Hk Cathodoluminescence, ionoluminescence
78.66.Fd III-V semiconductors

Characterization of individual interface traps with charge pumping

N. S. Saks, G. Groeseneken, and I. DeWolf

Appl. Phys. Lett. 68, 1383 (1996); http://dx.doi.org/10.1063/1.116087 (3 pages) | Cited 7 times

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Charge pumping (CP) of individual interface traps has been studied in small field effect transistors. The amplitude of the CP current is found to be quantized in units of qf, where f is the frequency of the applied CP wave form, and each unit represents the response of a single trap. The time dependence for emission of a trapped electron from a single interface trap has also been measured with CP. The emission probability is found to increase exponentially with time, consistent with Shockley–Read–Hall statistics. We also compare the relative merits of random telegraph noise experiments and CP for characterizing individual interface traps. © 1996 American Institute of Physics.
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73.23.-b Electronic transport in mesoscopic systems
85.30.Tv Field effect devices
85.35.Gv Single electron devices
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