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11 Mar 1996

Volume 68, Issue 11, pp. 1443-1585

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Efficiency enhancement by a tapered dielectric grating in a Cherenkov laser

T. Shiozawa and T. Nishimura

Appl. Phys. Lett. 68, 1443 (1996); http://dx.doi.org/10.1063/1.116248 (3 pages) | Cited 4 times

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A method for enhancing the efficiency of energy transfer from a relativistic electron beam to an electromagnetic wave in a Cherenkov laser is proposed. In a two‐dimensional Cherenkov laser composed of a planar relativistic electron beam and a parallel plate waveguide loaded with a dielectric grating, either one of the grating parameters, or the slot width and the groove depth, is tapered or gradually decreased in accordance with the decrease in the drift velocity of the electron beam. The numerical simulation demonstrates that sufficient efficiency enhancement can be achieved by a tapered dielectric grating. © 1996 American Institute of Physics.
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41.60.Cr Free-electron lasers
52.59.Px Hard X-ray sources

Corrugated quantum well infrared photodetectors for normal incident light coupling

C. J. Chen, K. K. Choi, M. Z. Tidrow, and D. C. Tsui

Appl. Phys. Lett. 68, 1446 (1996); http://dx.doi.org/10.1063/1.116249 (3 pages) | Cited 43 times

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In this letter, we report a quantum well infrared photodetector geometry for normal incidence light coupling. The new optical coupling scheme utilizes total internal reflection at the sidewalls of triangular wires to create favorable optical polarization for infrared absorption. These wires are created by chemically etching an array of V grooves through the detector active region along a specific crystallographic direction. Experimental results from the initial single color as well as two‐color detectors with linear wires and unthinned substrate show efficient light coupling comparable to the standard 45° edge coupling, without the undesirable wavelength dependence or spectral narrowing effect of a conventional grating structure. At the same time, the dark current density is substantially reduced due to the partial material removal. Further improvement is expected by creating a two‐dimensional coupling structure with substrate thinning. © 1996 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
85.60.Dw Photodiodes; phototransistors; photoresistors

All‐optical switching by spatial walkoff compensation and solitary‐wave locking

William E. Torruellas, Gaetano Assanto, Brian L. Lawrence, Russell A. Fuerst, and George I. Stegeman

Appl. Phys. Lett. 68, 1449 (1996); http://dx.doi.org/10.1063/1.116250 (3 pages) | Cited 47 times

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We demonstrate a novel approach to phase insensitive, all‐optical steering and switching based on an intensity‐induced change in the propagation direction of multidimensional spatial solitary waves in bulk, birefringent, quadratic nonlinear media. Our demonstration is based on second‐harmonic generation in a KTP crystal. Compensation for the lateral displacements due to walkoff in SHG is observed. © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Integration of nonlinear optical polymer waveguides with InGaAs p‐i‐n photodiodes

Jeffrey S. Cites, Paul R. Ashley, and Richard P. Leavitt

Appl. Phys. Lett. 68, 1452 (1996); http://dx.doi.org/10.1063/1.116251 (3 pages) | Cited 5 times

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Performance requirements for systems employing optical guided wave components may be satisfied more easily through the hybrid integration of nonlinear optical (NLO) polymers and semiconductors. Reported in this letter, is the integration of NLO polymer waveguides with InGaAs p‐i‐n photodetectors at 1.3 μm, with coupling efficiencies greater than 99% and system responsivities of 0.84 A/W. An analysis of the structure using a two‐dimensional beam propagation model was performed. Planarization was maintained and the design allows for further integration of optoelectronic components. © 1996 American Institute of Physics.
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42.82.-m Integrated optics

Mixed‐mode twisted nematic liquid crystal cells for reflective displays

Shin‐Tson Wu and Chiung‐Sheng Wu

Appl. Phys. Lett. 68, 1455 (1996); http://dx.doi.org/10.1063/1.116252 (3 pages) | Cited 105 times

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A mixed‐mode twisted nematic (MTN) liquid crystal cell is developed for both reflective‐mode projection and direct‐view displays. This MTN cell exhibits two times higher brightness and eliminates the parallax problem as commonly observed in reflective displays using a nominal transmissive TN cell. In the meantime, the MTN structure preserves advantageous characteristics of the TN structure such as low operation voltage and high contrast ratio. Confirming computer simulations using Jones matrix method agree with the experimental results well. © 1996 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices

Fine structure in 1.4 eV luminescence band from plasma deposited amorphous silicon layers on silicon substrates

K. S. R. K. Rao, A. K. Sreedhar, H. L. Bhat, R. A. Singh, G. C. Dubey, and Vikram Kumar

Appl. Phys. Lett. 68, 1458 (1996); http://dx.doi.org/10.1063/1.116253 (3 pages) | Cited 3 times

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Fine structure has been observed in the 1.4 eV luminescence band of thin (≊100 Å) amorphous silicon (a‐Si:H) layers deposited on silicon substrates. The energy separation between the peaks is ≊20 meV. A similar luminescence band observed in layers grown on glass substrates under the same conditions is several orders of magnitude lower in intensity and is without perceptible fine structure. There is no change in the nature of the fine structure and the peak energies in films deposited at different substrate temperatures (150–300 °C). The dependence of the luminescence band on illumination intensity and on temperature has also been measured. This indicates probable excitonic nature of the luminescence. Possible causes for the observed phenomena are discussed. © 1996 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
78.66.Jg Amorphous semiconductors; glasses

Crucial influences of K33/K11 ratio on viewing angle of display mode using a bend‐alignment liquid‐crystal cell with a compensator

Chen‐Lung Kuo, Tetsuya Miyashita, Makoto Suzuki, and Tatsuo Uchida

Appl. Phys. Lett. 68, 1461 (1996); http://dx.doi.org/10.1063/1.116254 (3 pages) | Cited 37 times

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The critical splay‐to‐bend‐alignment transition in a liquid‐crystal cell treated by parallel rubbing (π cell) was investigated to improve the optical performance of the display mode using this cell with a compensator. By analyzing the free energy in liquid crystal cells, it was found that nematic media with a smaller K33/K11 ratio can reduce the transition voltage considerably, and therefore, also reduce the required optical anisotropy of the liquid‐crystal cell. The significantly improved viewing angle for this mode, achieved by using these newly designed parameters, is also confirmed theoretically and experimentally. © 1996 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices

Photoconductive sampling with an integrated source follower/amplifier

Jiunn‐Ren Hwang, Heng‐Ju Cheng, John F. Whitaker, and James V. Rudd

Appl. Phys. Lett. 68, 1464 (1996); http://dx.doi.org/10.1063/1.116255 (3 pages) | Cited 8 times

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A hybrid, optoelectronic sampling circuit based on a photoconductive switch and a junction‐field‐effect‐transistor (JFET) source follower/amplifier has been demonstrated to have picosecond response, high‐sensitivity, absolute‐voltage capability, and a very high impedance. The distributed capacitance of the electrical measurement system is reduced to the gate input capacitance of the JFET, and the conventional photoconductive current measurement is transferred into an absolute voltage measurement. Gating measurements with an improvement of 150 times in output voltage over unamplified photoconductive gates have been made using only 10 μW of average optical power. The effective on‐state resistance of the photogate has also been increased by more than 150 times, indicating that a photoconductive probe with very low invasiveness may be produced. © 1996 American Institute of Physics.
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42.79.Pw Imaging detectors and sensors
72.40.+w Photoconduction and photovoltaic effects
73.40.Sx Metal-semiconductor-metal structures
85.60.Gz Photodetectors (including infrared and CCD detectors)

Growth of Nd3+‐doped LiNbO3 optical superlattice crystals and its potential applications in self‐frequency doubling

Ya‐lin Lu, Yan‐qing Lu, Cheng‐cheng Xue, and Nai‐ben Ming

Appl. Phys. Lett. 68, 1467 (1996); http://dx.doi.org/10.1063/1.116256 (3 pages) | Cited 8 times

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We have grown Nd:MgO:LiNbO3 crystals with periodic ferroelectric domain structures. Absorption and fluorescence spectra measured on these crystals showed little difference from those from Nd:MgO:LibO3 with uniform domain structures. Green fluorescence was generated by self‐frequency doubling in a cavity having great losses and pumped by a pulsed dye laser. © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

On the fabrication of annealed proton exchanged waveguides with electric field poled domain reversals in Z‐cut LiNbO3

W. H. Li, R. Tavlykaev, R. V. Ramaswamy, and S. Samson

Appl. Phys. Lett. 68, 1470 (1996); http://dx.doi.org/10.1063/1.116257 (3 pages) | Cited 3 times

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The influence of annealed proton exchanged (APE) waveguides on domain inversion in Z‐cut LiNbO3 is reported. For this study, pyrophosphoric acid is used to fabricate planar APE waveguides, both before and after creating domain inversion through the application of an external electric field at room temperature. Domain inversion produced in this manner is shown to sustain the APE process. However, domain inversion is not producible in portions of the substrates having APE waveguides on both crystal faces. The implication of this result for integrated optic device fabrication is discussed. © 1996 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.79.Gn Optical waveguides and couplers
42.82.Cr Fabrication techniques; lithography, pattern transfer

In situ scanning tunneling microscopy of GaAs(001), (111)A, and (111)B surfaces in sulfuric acid solution

Hideki Yao, Shueh‐Lin Yau, and Kingo Itaya

Appl. Phys. Lett. 68, 1473 (1996); http://dx.doi.org/10.1063/1.116258 (3 pages) | Cited 10 times

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In situ electrochemical scanning tunneling microscopy (STM) was used to examine n‐type GaAs(001), (111)A, and (111)B surfaces in 0.05 M sulfuric acid. Cathodic polarization of the GaAs electrodes effectively inhibited the oxidation of the surface, making it possible to acquire STM images with atomic resolution. Atomically‐flat terrace‐step structures were consistently observed on all surfaces prepared by the chemical etching method. Steps observed on these surfaces are composed of double layers with step heights of 0.28 and 0.33 nm for the (001) and (111) surfaces, respectively. In situ STM atomic images revealed that those surfaces have (1×1) structures with the square and hexagonal lattices, respectively. © 1996 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.B- Structure of clean surfaces (and surface reconstruction)

Control of process uniformity by using electron cyclotron resonance plasma produced by multiannular antenna

Yasuyoshi Yasaka and Tomokazu Nakamura

Appl. Phys. Lett. 68, 1476 (1996); http://dx.doi.org/10.1063/1.116259 (3 pages) | Cited 2 times

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A large‐diameter uniform electron cyclotron resonance plasma is produced by using multiannular antenna which has a capability of adjusting the radiated powers from two annular slits driven by two microwave sources. The radial profile of the ion saturation current can be varied from hollow to hill‐type shape by controlling radial profile of radiated microwave power of the multiannular antenna. In optimum conditions, the plasma has ±2.9% uniformity over 280 mm in diameter with electron density of 6×1010 cm−3. This plasma source is applied to a‐Si:H deposition and c‐Si etching. It is shown that the radial profile of the deposition rate as well as that of the etching rate can be controlled by changing the radial power radiation profile. © 1996 American Institute of Physics.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition

Observation of population inversion in recombining Al plasma by time‐ and space‐resolved x‐ray spectroscopy

M. Katsuragawa, J. Itatani, S. Orimo, T. Ozaki, H. Kuroda, and A. Sasaki

Appl. Phys. Lett. 68, 1479 (1996); http://dx.doi.org/10.1063/1.116260 (3 pages) | Cited 1 time

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Time‐ and/or space‐resolved spectra of laser‐produced Al plasmas were investigated using a framing crystal x‐ray spectrometer. Population inversion was directly observed between the n=4 and n=3 levels in He‐like Al, and the correspondent numerical simulation well describes observed characteristics. Plasma evolution and their effects on inversion was shown on a Te–Ne map, and discussions on the optimum conditions based on the experiments and calculations are also given. © 1996 American Institute of Physics.
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42.55.Vc X- and γ-ray lasers
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.59.Ye Plasma devices for generation of coherent radiation

Infrared Raman scattering as a sensitive probe for the thermal conductivity of chemical vapor deposited diamond films

E. Wörner, J. Wagner, W. Müller‐Sebert, C. Wild, and P. Koidl

Appl. Phys. Lett. 68, 1482 (1996); http://dx.doi.org/10.1063/1.116261 (3 pages) | Cited 8 times

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The infrared Raman spectrum of chemical vapor deposited (CVD) diamond films has been correlated with the in‐plane thermal conductivity of the films. The scattering strength of the 1332 cm−1 zone‐center phonon line of diamond, measured relative to the intensity of the nondiamond carbon phase, was found to increase strongly with increasing thermal conductivity. A good correlation between these two properties was found even for the highest quality CVD diamond films with peak thermal conductivities up to 54 W/cm K. The dependence of the peak thermal conductivity on the intensity of the 1332 cm−1 phonon line normalized to the scattering strength of the nondiamond carbon phase can be described by a power law with an exponent of 0.5. © 1996 American Institute of Physics.
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66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
78.30.Hv Other nonmetallic inorganics
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Growth and in situ x‐ray characterization of YBa2Cu3Ox/LaAlO3 superlattices

S. M. Williams, S. Maglic, C. Thomas, C. T. Lin, M. J. Wagoner, R. P. H. Chang, and J. B. Ketterson

Appl. Phys. Lett. 68, 1485 (1996); http://dx.doi.org/10.1063/1.116262 (3 pages) | Cited 2 times

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We utilized a miniature sputtering cell with mylar windows and multitarget sputtering guns in order to study the growth of YBCO/LaAlO3 superlattices on SrTiO3 substrates. Computer modeling of the diffraction spectra enabled us to determine the interface width between the layers. After deposition of the superlattices, the substrate temperature was increased to study any interdiffusion. © 1996 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
74.78.-w Superconducting films and low-dimensional structures
81.15.Cd Deposition by sputtering

The growth and properties of epitaxial KNbO3 thin films and KNbO3/KTaO3 superlattices

H.‐M. Christen, L. A. Boatner, J. D. Budai, M. F. Chisholm, L. A. Géa, P. J. Marrero, and D. P. Norton

Appl. Phys. Lett. 68, 1488 (1996); http://dx.doi.org/10.1063/1.116263 (3 pages) | Cited 57 times

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Potassium niobate (KNbO3) thin films and potassium niobate/tantalate (KNbO3/KTaO3) superlattices have been grown on KTaO3 (001) substrates by pulsed laser deposition. The thin‐film structures were analyzed by Rutherford backscattering/ion‐channeling techniques, x‐ray θ–2θ and Φ scans, and both conventional and Z‐contrast scanning transmission electron microscopy. Excellent film flatness and crystallinity are evidenced by these techniques. At room temperature, the KNbO3 films are characterized by an orthorhombic structure which differs from that of bulk KNbO3. The interfaces between the layers in the KNbO3/KTaO3 superlattice structures were found to be compositionally sharp on an atomic scale. © 1996 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Fg Pulsed laser ablation deposition

Azimuthal rotation of diamond crystals epitaxially nucleated on silicon {001}

T. Tachibana, K. Hayashi, and K. Kobashi

Appl. Phys. Lett. 68, 1491 (1996); http://dx.doi.org/10.1063/1.116264 (2 pages) | Cited 20 times

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Highly oriented diamond films with {001} facets were grown on Si{001} using microwave plasma enhanced chemical vapor deposition. The tilt and rotation of the diamond crystals were measured by polar x‐ray diffraction. The full widths at half‐maximum of {004} and {220} diffraction peaks were 5° and 10°, respectively. It was found that the {220} diffraction poles split into two peaks by approximately 5°. This result indicated that there were two possible azimuthal rotations about the surface normal of the substrate for the epitaxially nucleated diamond grains. © 1996 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Migration of a Si microcluster due to the electron wind on a Si(001) surface

Takahisa Doi, Masakazu Ichikawa, Shigeyuki Hosoki, and Ken Ninomiya

Appl. Phys. Lett. 68, 1493 (1996); http://dx.doi.org/10.1063/1.116265 (2 pages) | Cited 1 time

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At a high temperature of about 1500 K, the migration of a Si microcluster was observed on a Si(001) surface by using an electron microscope. This cluster always existed together with an attendant region. This region melted first during heating because of its lower crystallinity compared to the Si substrate. The Si atoms in this melted zone were struck by electrons moving towards the anode and were pushed by the electron wind in the same direction as the electrons. The Si microcluster floating in the melted zone also migrated toward the anode side about ten times as fast as the Si electromigration atoms moving in the opposite direction. © 1996 American Institute of Physics.
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66.30.Qa Electromigration
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Fabrication of boron‐carbide/boron heterojunction devices

Seong‐Don Hwang, Dongjin Byun, N. J. Ianno, P. A. Dowben, and H. R. Kim

Appl. Phys. Lett. 68, 1495 (1996); http://dx.doi.org/10.1063/1.116266 (3 pages) | Cited 27 times

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We have succeeded in the fabrication of a boron–carbide/boron diode on an aluminum substrate, and a boron–carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron–carbide (B5C) acts as a p‐type material. Both boron and boron–carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement. © 1996 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.-z Semiconductor devices

Phosphorus doping of Si and Si1−xGex grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4

L. P. Chen, G. W. Huang, and C. Y. Chang

Appl. Phys. Lett. 68, 1498 (1996); http://dx.doi.org/10.1063/1.115678 (3 pages) | Cited 7 times

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100 ppm PH3 diluted in hydrogen is used as the n‐type dopant gas in Si and Si1−xGex epilayers grown by ultrahigh vacuum chemical vapor deposition (UHVCVD) using Si2H6 and GeH4. The phosphorus concentration in Si increases linearly at a small PH3 flow rate and becomes nearly saturated at higher flow rates, while the phosphorus concentration in Si1−xGex only shows a nearly linear behavior with PH3 flow rate. The growth rates of Si and Si1−xGex epilayers decrease seriously (∼50%) and slightly (∼10%) with the increase of PH3 flow rate, respectively. These results can be explained by a model based on the enhancement of hydrogen desorption rate at smaller PH3 flow rates and different levels of the effects of phosphorus blocking of surface‐activated sites between Si and Si1−xGex epilayers at higher PH3 flow rates. © 1996 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Recrystallization of high energy As‐implanted GaAs studied by transmission electron microscopy

J. Jasinski, Y. Chen, J. Washburn, Z. Liliental‐Weber, H. H. Tan, C. Jagadish, and M. Kaminska

Appl. Phys. Lett. 68, 1501 (1996); http://dx.doi.org/10.1063/1.115679 (3 pages) | Cited 4 times

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Ion implantation damage and the regrowth process during thermal annealing of 2 MeV As‐ion‐implanted GaAs were studied by transmission electron microscopy. With low‐temperature annealing, a high denisty of stacking faults was formed during the recrystallization process, but they were rarely observed with high‐temperature annealing. At intermediate temperatures, a much lower denisty of stacking faults was generated at the upper interface between the buried amorphous layer and the crystal than that at the lower interface, where a higher concentration of as‐implanted arsenic exists. Based on the observed experimental results, an atomic model is proposed to explain the formation of stacking faults induced by As clusters. © 1996 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
61.80.Jh Ion radiation effects

Sub‐10 nm lithography with self‐assembled monolayers

M. J. Lercel, H. G. Craighead, A. N. Parikh, K. Seshadri, and D. L. Allara

Appl. Phys. Lett. 68, 1504 (1996); http://dx.doi.org/10.1063/1.115680 (3 pages) | Cited 88 times

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Dots demonstrating critical resist dimensions of approximately 5 to 6 nm were formed in an octadecylsiloxane monolayer on silicon by electron beam exposure using a digital scanning electron microscope at 20 keV beam energy. The patterned dots were observed by imaging with an atomic force microscope (AFM). The electron beam size was measured to confirm that it is not the limiting factor in the exposure resolution. The limit that prevents the observation of smaller structures is either the small contrast in the AFM imaging for smaller dots or an intrinsic material limit caused by the secondary electron range. © 1996 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

The deposition of SiOF film with low dielectric constant in a helicon plasma source

Jung‐Hyung Kim, Sang‐Hun Seo, Seok‐Min Yun, Hong‐Young Chang, Kwang‐Man Lee, and Chi‐Kyu Choi

Appl. Phys. Lett. 68, 1507 (1996); http://dx.doi.org/10.1063/1.115681 (3 pages) | Cited 13 times

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SiOF films deposited by a helicon wave plasma chemical vapor deposition method has been characterized using Fourier transform infrared spectroscopy and ellipsometry. High density plasma of ≳1012 cm−3 can be obtained on a substrate at low pressure (<10 mTorr) with rf power ≳400 W with a helicon plasma source. A gas mixture of SiF4, O2, and Ar was used to deposit SiOF films on 5 in. Si(100) wafers not intentionally heated. Optical emission spectroscopy was used to study the relation between the relative densities of the radicals and the deposition mechanism. It was found that the addition of Ar gas to the SiF4/O2 mixture greatly increased the F concentration in the SiOF film. Discharge conditions such as gas composition, sheath potential, and the relative densities of the radicals affect the properties of the film. The dielectric constant of the SiOF film deposited using the helicon plasma source was 3.1, a value lower than that of the oxide film by other methods. © 1996 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxial growth of GaN/GaAs‐based heterostructures

Z. Z. Bandić, R. J. Hauenstein, M. L. O’Steen, and T. C. McGill

Appl. Phys. Lett. 68, 1510 (1996); http://dx.doi.org/10.1063/1.115682 (3 pages) | Cited 15 times

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Microscopic growth processes associated with GaN/GaAs molecular beam epitaxy (MBE) are examined through the introduction of a first‐order kinetic model. The model is applied to the electron cyclotron resonance microwave plasma‐assisted MBE (ECR‐MBE) growth of a set of δ‐GaNyAs1−y/GaAs strained‐layer superlattices that consist of nitrided GaAs monolayers separated by GaAs spacers, and that exhibit a strong decrease of y with increasing T over the range 540–580 °C. This y(T) dependence is quantitatively explained in terms of microscopic anion exchange, and thermally activated N surface‐desorption and surface‐segregation processes. N surface segregation is found to be significant during GaAs overgrowth of GaNyAs1−y layers at typical GaN ECR‐MBE growth temperatures, with an estimated activation energy Es∼0.9 eV. The observed y(T) dependence is shown to result from a combination of N surface segregation/desorption processes. © 1996 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

New excimer‐laser‐crystallization method for producing large‐grained and grain boundary‐location‐controlled Si films for thin film transistors

H. J. Kim and James S. Im

Appl. Phys. Lett. 68, 1513 (1996); http://dx.doi.org/10.1063/1.115683 (3 pages) | Cited 65 times

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Based on the previously elucidated super lateral growth phenomenon, we have developed an excimer‐laser‐crystallization method that produces large‐grained and grain‐boundary‐ location‐controlled Si films on SiO2  and which possesses a wide processing window. For the set of experiments reported in this letter, a patterned SiO2 capping layer on top of Si films is utilized as an anti‐reflective coating in order to induce artificially controlled super‐lateral growth in the film upon being irradiated with a single excimer laser pulse. For a simple SiO2  stripe pattern, the occlusion among the laterally and directionally solidifying grains permits the eventual development of elongated parallel grains with a single perpendicular grain boundary which is localized in the middle of the completely melted regions, provided that the width of the completely molten region is sufficiently narrow so as to avoid the nucleation of solids in the supercooled liquid. © 1996 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.30.Tv Field effect devices
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