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11 Mar 1996

Volume 68, Issue 11, pp. 1443-1585

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Transit‐time effect on electronic noise in submicron n +nn+ structures

P. Shiktorov, V. Gruzinskis, E. Starikov, L. Reggiani, and L. Varani

Appl. Phys. Lett. 68, 1516 (1996); http://dx.doi.org/10.1063/1.115684 (3 pages) | Cited 6 times

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The voltage noise spectrum associated with velocity fluctuations is calculated for submicron n +nn+ GaAs structures in the framework of a closed hydrodynamic approach based on the velocity and energy conservation equations. Transit‐time effects are found to substantially influence the noise spectrum in a wide frequency range. The good agreement found with Monte Carlo simulations validates the proposed theoretical approach. We predict a minimum noise measure at the frequency of 250 GHz for the considered structure. © 1996 American Institute of Physics.
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72.70.+m Noise processes and phenomena
85.30.De Semiconductor-device characterization, design, and modeling

Resonant Raman scattering from phonons in GaAs/(GaAs)m(AlAs)n quantum wire structures

A. C. Maciel, J. M. Freyland, L. Rota, C. Kiener, J. F. Ryan, U. Marti, D. Martin, F. Morier‐Gemoud, and F. K. Reinhart

Appl. Phys. Lett. 68, 1519 (1996); http://dx.doi.org/10.1063/1.115685 (3 pages) | Cited 4 times

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Raman spectroscopy has been used to measure phonons in GaAs v‐groove quantum wire structures containing (001) and (111) GaAs/AlAs superlattice barrier regions. Resonance enhancement permits the identification of modes in different regions of the structure, and the measured phonon frequencies provide structural information which shows clear evidence of GaAs migration during growth from (001) surfaces into the grooves. Confined and interface phonons with large in‐(111) plane wavevectors are observed. © 1996 American Institute of Physics.
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68.55.-a Thin film structure and morphology
78.30.Fs III-V and II-VI semiconductors

Migration of compensating defects in p‐type ZnSe during annealing

Anthony L. Chen, Wladek Walukiewicz, Kristin Duxstad, and Eugene E. Haller

Appl. Phys. Lett. 68, 1522 (1996); http://dx.doi.org/10.1063/1.115686 (3 pages) | Cited 9 times

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We annealed p‐type, nitrogen‐doped ZnSe grown by molecular‐beam epitaxy and subsequently characterized the samples by photoluminescence spectroscopy, capacitance–voltage profiling, and secondary ion mass spectroscopy. We found that the decrease in active acceptor concentration upon annealing stems from compensation by defects that originate from the surface. By fitting the nitrogen acceptor profiles with solutions of the diffusion equation, we estimate the migration energy of the compensating defect to be 4.0±0.3 eV. © 1996 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors

Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition

S. Keller, B. P. Keller, Y.‐F. Wu, B. Heying, D. Kapolnek, J. S. Speck, U. K. Mishra, and S. P. DenBaars

Appl. Phys. Lett. 68, 1525 (1996); http://dx.doi.org/10.1063/1.115687 (3 pages) | Cited 136 times

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The properties of 1.2 μm thick GaN films were found to be significantly influenced by the duration of exposing the sapphire substrate to ammonia prior to the GaN growth initiation. The different nitridation schemes of sapphire strongly affect the dislocation structure of GaN films resulting in a decrease of the dislocation density from 2×1010 to 4×108 cm−2 for shorter NH3 preflow times. Room‐ and low‐temperature electron transport characteristics of these films are specifically affected by the dislocation structure. A 300 K electron mobility as high as 592 cm2/V s was obtained for a short ammonia preflow whereas a long nitridation caused the mobility to drop to 149 cm2/V s. Additionally, the photoluminescence quality deteriorates for samples with a long sapphire nitridation time. © 1996 American Institute of Physics.
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73.61.Ey III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Strain relaxation in Fe3(Al,Si)/GaAs: An x‐ray scattering study

D. Y. Noh, Y. Hwu, J. H. Je, M. Hong, and J. P. Mannáerts

Appl. Phys. Lett. 68, 1528 (1996); http://dx.doi.org/10.1063/1.115688 (3 pages) | Cited 8 times

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Lattice strain of epitaxially grown single crystal Fe3(Al,Si)/GaAs films was measured in a synchrotron x‐ray scattering experiment. The Fe3Al film (2.5% lattice mismatch) was partially strained and tetragonally distorted at room temperature. As the sample was annealed to 500 °C, the internal strain was mostly relaxed while the tegragonal distortion was greatly reduced. We believe that the strain relaxation was caused by the interdiffusion of atoms through domain boundaries at elevated temperatures. In comparison, the Fe3Si film with much less lattice mismatch (0.17%) was completely strained up to 600 °C without being relaxed. © 1996 American Institute of Physics.
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61.05.cf X-ray scattering (including small-angle scattering)
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Room‐temperature photoenhanced wet etching of GaN

M. S. Minsky, M. White, and E. L. Hu

Appl. Phys. Lett. 68, 1531 (1996); http://dx.doi.org/10.1063/1.115689 (3 pages) | Cited 114 times

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Laser‐enhanced, room‐temperature wet etching of GaN using either dilute HCl:H2O (1:10) or 45% KOH:H2O(1:3) is reported. Etch rates of a few hundred Å/min (HCl) and up to a few thousand Å/min (KOH) have been measured for unintentionally doped n‐type films of thickness (1–2 μm) grown by MOCVD on a sapphire substrate. The etching is thought to take place photoelectrochemically with holes and electrons generated by incident illumination from 4.5 mW of HeCd laser power enhancing the oxidation and reduction reactions in an electrochemical cell. © 1996 American Institute of Physics.
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81.65.Cf Surface cleaning, etching, patterning
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light

InAs monolayers and the controlled introduction of deep levels in AlGaAs alloys

Raffaele Colombelli, Jean‐Marc Jancu, Fabio Beltram, Lucia Sorba, Denis Bertho, and Christian Jouanin

Appl. Phys. Lett. 68, 1534 (1996); http://dx.doi.org/10.1063/1.115690 (3 pages) | Cited 7 times

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InAs monolayers and submonolayers have been introduced by means of molecular beam epitaxy in AlxGa1−xAs structures. Our photoluminescence and photoluminescence excitation measurements represent the first results on heterostructures with In sheets in AlxGa1−xAs. It is argued that these results together with their tight‐binding modeling here presented provide a valid framework to implement a new class of heterostructures based on engineered deep centers. © 1996 American Institute of Physics.
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78.55.Cr III-V semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Complete p‐type activation in vertical‐gradient freeze GaAs co‐implanted with gallium and carbon

S. T. Horng and M. S. Goorsky

Appl. Phys. Lett. 68, 1537 (1996); http://dx.doi.org/10.1063/1.115691 (3 pages) | Cited 5 times

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High‐resolution triple‐axis x‐ray diffractometry and Hall‐effect measurements were used to characterize damage evolution and electrical activation in gallium arsenide co‐implanted with gallium and carbon ions. Complete p‐type activation of GaAs co‐implanted with 5×1014 Ga cm−2 and 5×1014 C cm−2 was achieved after rapid thermal annealing at 1100 °C for 10 s. X‐ray diffuse scattering was found to increase after rapid thermal annealing at 600–900 °C due to the aggregation of implantation‐induced point defects. In this annealing range, there was ∼10%–72% activation. After annealing at higher annealing temperatures, the diffuse scattered intensity decreased drastically; samples that had been annealed at 1000 °C (80% activated) and 1100 °C (∼100% activated) exhibited reciprocal space maps that were indicative of high crystallinity. The hole mobility was about 60 cm2/V s for all samples annealed at 800 °C and above, indicating that the crystal perfection influences dopant activation more strongly than it influences mobility. Since the high‐temperature annealing simultaneously increases dopant activation and reduces x‐ray diffuse scattering, we conclude that point defect complexes which form at lower annealing temperatures are responsible for both the diffuse scatter and the reduced activation. © 1996 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
61.80.Jh Ion radiation effects

Planar native‐oxide‐based AlGaAs‐GaAs‐InGaAs quantum well microdisk lasers

M. J. Ries, E. I. Chen, N. Holonyak, G. M. Iovino, and A. D. Minervini

Appl. Phys. Lett. 68, 1540 (1996); http://dx.doi.org/10.1063/1.115692 (3 pages) | Cited 10 times

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Data are presented on the 300 K photopumped (pulsed) laser operation of ultrathin (∼0.15 μm) planar microdisk lasers. The tiny lasers employ the wet oxidation of an AlGaAs layer beneath the disks to form semiconductor cavities that are in solid contact but optically isolated from the GaAs substrate. The resulting microcavity lasers operate at low pump intensities and exhibit spectra characteristic of whispering gallery mode microdisk lasers. © 1996 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers
42.60.-v Laser optical systems: design and operation

Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots

C.‐K. Sun, G. Wang, J. E. Bowers, B. Brar, H.‐R. Blank, H. Kroemer, and M. H. Pilkuhn

Appl. Phys. Lett. 68, 1543 (1996); http://dx.doi.org/10.1063/1.115693 (3 pages) | Cited 71 times

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Time‐resolved radiative recombination measurements on GaSb quantum dots have been performed. The GaSb quantum dots are grown by molecular beam epitaxy on (100) GaAs through a self‐assembly process. Time‐resolved measurements show that, after a rapid hole capture process, the photoluminescence decays with a fast and a slow component. The fast component is shortened significantly with higher excitation intensity while the slow component is roughly constant. The radiative lifetimes are much longer than the lifetimes of ordinary GaSb quantum wells with a straddling band lineup. These results support a staggered band lineup and space charge induced band‐bending model. © 1996 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors

Direct measurement of the refractive index change of silicon with optically injected carriers

L. S. Yu, Q. Z. Liu, Z. F. Guan, and S. S. Lau

Appl. Phys. Lett. 68, 1546 (1996); http://dx.doi.org/10.1063/1.115694 (3 pages) | Cited 1 time

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Silicon phase modulators are important silicon optoelectronic devices. The relationship of the refractive index change with injected carrier concentration is the basis for the operation of silicon phase modulators. No direct experimental data of this relationship have been reported. We have developed a new method for the direct measurement of this relationship using a Fabry–Perot interference and optical injection of carriers. The experimental results of the refractive index change are reported for the first time in the range of injected carrier concentration between 1013 and 1015 cm−3. It should be noted that our experiment results are about 5 to 10 times larger than those predicted by theory. The reliability of our experiments is also discussed. © 1996 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.79.Hp Optical processors, correlators, and modulators

Silicon interstitial trapping in polycrystalline silicon films studied by monitoring interstitial reactions with underlying insulating films

D. Tsoukalas and D. Kouvatsos

Appl. Phys. Lett. 68, 1549 (1996); http://dx.doi.org/10.1063/1.115695 (3 pages) | Cited 3 times

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Oxidation experiments on structures of polycrystalline silicon on thin oxides indicate that the generated interstitials are partially trapped within the polycrystalline silicon layer and partially escape, diffuse through the underlying thin oxide, and affect pre‐grown oxidation‐induced stacking faults in the silicon. The trapping efficiency of the polycrystalline silicon film has been found to increase with decreasing grain size or increasing film thickness. This indicated that grain boundary traps are primarily responsible for interstitial trapping within the polycrystalline silicon. The larger trapping efficiency of smaller grain size films was attributed to the larger surface of grain boundaries and the larger grain boundary trap concentration in that case. In all cases, polycrystalline silicon films trap more interstitials than crystalline silicon films of the same thickness that were used as a reference in this study. © 1996 American Institute of Physics.
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61.72.J- Point defects and defect clusters

Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation

Meishoku Koh, Bungo Shigeta, Kai Igarashi, Takashi Matsukawa, Takashi Tanii, Shigetaka Mori, and Iwao Ohdomari

Appl. Phys. Lett. 68, 1552 (1996); http://dx.doi.org/10.1063/1.115696 (3 pages) | Cited 5 times

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Generation rates of Si/SiO2 interface defects, namely, the oxide trapped holes and the interface states, by MeV He single ion irradiation have been investigated quantitatively. From the analysis of threshold voltage shifts induced by single ions of 2 MeV He, the number of the oxide trapped holes and the interface states induced in an n‐ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, respectively. The hole trapping efficiency is almost 100% at the ion dose below 1 ions/ μm2. © 1996 American Institute of Physics.
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61.80.Jh Ion radiation effects
85.30.Tv Field effect devices

Low temperature scanning electron microscopy study of YBa2Cu3O7−δ multilayer dc SQUID magnetometers

R. Gerber, D. Koelle, R. Gross, R. P. Huebener, F. Ludwig, E. Dantsker, R. Kleiner, and John Clarke

Appl. Phys. Lett. 68, 1555 (1996); http://dx.doi.org/10.1063/1.115697 (3 pages) | Cited 11 times

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Low temperature scanning electron microscopy (LTSEM) has been used to analyze the superconducting properties of integrated magnetometers involving a dc superconducting quantum interference device. The study yielded spatially resolved information on the critical temperature Tc and critical current density Jc in the upper and lower superconducting layers of the YBa2Cu3O7−δ/SrTiO3/YBa2Cu3O7−δ structure. The Tc of the lower film was depressed by several kelvin, and the Jc of the upper film was lower where it crossed the edge of a lower YBa2Cu3O7−δ film covered with SrTiO3. A gradient in Tc was observed in the lower film near the edge of a via, arising presumably from oxygen diffusion during fabrication. © 1996 American Institute of Physics.
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74.78.Fk Multilayers, superlattices, heterostructures
85.25.Dq Superconducting quantum interference devices (SQUIDs)

Large bandwidth and low noise in a diffusion‐cooled hot‐electron bolometer mixer

A. Skalare, W. R. McGrath, B. Bumble, H. G. LeDuc, P. J. Burke, A. A. Verheijen, R. J. Schoelkopf, and D. E. Prober

Appl. Phys. Lett. 68, 1558 (1996); http://dx.doi.org/10.1063/1.115698 (3 pages) | Cited 38 times

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Heterodyne measurements have been made at 533 GHz using a novel superconducting hot‐electron bolometer in a waveguide mixer. The bolometer is a 0.3 μm long niobium microbridge with a superconducting transition temperature of 5 K. The short length ensures that electron diffusion dominates over electron‐phonon interactions as the electron cooling mechanism, which should allow heterodyne detection with intermediate frequencies (if) of several GHz. A Y‐factor response of 1.15 dB has been obtained at an if of 1.4 GHz with 77 and 295 K loads, indicating a receiver noise temperature of 650 K DSB. The −3 dB rolloff in the if response occurs at 1.7 GHz. © 1996 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors

Millimeter‐wave Hilbert‐transform spectroscopy with high‐Tc Josephson junctions

Yu. Ya. Divin, H. Schulz, U. Poppe, N. Klein, K. Urban, and V. V. Pavlovskii

Appl. Phys. Lett. 68, 1561 (1996); http://dx.doi.org/10.1063/1.115699 (3 pages) | Cited 22 times

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The application of Hilbert‐transform spectroscopy for the measurement of high‐harmonic content of the radiation from a frequency multiplier has been demonstrated in the spectral range from 60 to 450 GHz. YBa2Cu3O7−x grain‐boundary Josephson junctions made on (110) NdGaO3 bicrystal substrates have been used in these experiments. The internal Josephson radiation of the junctions reveals a Lorentzian shape due to thermal noise broadening. The possibility to obtain a spectral resolution as low as 280 MHz (∼0.01 cm −1) has been shown with a Josephson junction operating at liquid‐nitrogen temperature. © 1996 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects

Anisotropic self‐field effect in a‐axis YBa2Cu3O7−x/Ag/PbIn Josephson junctions

I. Takeuchi, C. J. Lobb, Z. Trajanovic, P. A. Warburton, and T. Venkatesan

Appl. Phys. Lett. 68, 1564 (1996); http://dx.doi.org/10.1063/1.115700 (3 pages) | Cited 9 times

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We have measured magnetic diffraction patterns of critical currents of vertical geometry YBa2Cu3O7−x(YBCO)/Ag/PbIn Josephson junctions made with in‐plane aligned a‐axis oriented YBCO films. Anisotropic penetration depths in YBCO and the resulting Josephson penetration depths give rise to diffraction patterns which are distinctly different when the magnetic field is applied in two orthogonal directions (b and c). The London penetration depths of YBCO, λb, and λc, are found to be ∼2000 Å and ∼1.2 μm, respectively, at 4.2 K. Intrinsic IcRn products of up to 0.2 mV have been obtained in these junctions. © 1996 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects

High critical current densities in Nb47%Ti multilayers with a planar copper flux pinning nanostructure

E. Kadyrov, A. Gurevich, and D. C. Larbalestier

Appl. Phys. Lett. 68, 1567 (1996); http://dx.doi.org/10.1063/1.115701 (3 pages) | Cited 10 times

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The critical current densities (Jc) of Nb47 wt% Ti–Cu multilayers were investigated for the Nb–Ti layer thickness ranging from ds=10 to 100 nm and for fixed Cu thickness dn=10 nm. Jc showed a strong enhancement with decreasing ds, reaching new very high values in this system [0.91 MA/cm2 (5 T) and 0.38 MA/cm2 (7 T)] for ds=30 nm, declining at smaller ds. The nonmonotonic dependence of Jc on ds arises from competition between the enhanced pinning force produced by the increased pin density at smaller ds which is opposed by a proximity‐effect‐induced depression of Tc at smaller superconductor thickness. © 1996 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.25.Sv Critical currents

Degenerate‐four‐wave‐mixing of fullerene doped inorganic glass

Huimin Liu, Bahmam Taheri, Weiyi Jia, Fucheng Lin, and Sen Mao

Appl. Phys. Lett. 68, 1570 (1996); http://dx.doi.org/10.1063/1.115702 (3 pages) | Cited 1 time

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A very recently developed high Tm (melting temperature) optical glass doped with C60/C70 molecules has been studied. Using a picosecond laser operating at 532 nm, the observed time‐resolved degenerate‐four‐wave‐mixing (DFWM) spectra show remarkable changes with addition of fullerene into the glass host. © 1996 American Institute of Physics.
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74.70.Wz Carbon-based superconductors
78.47.-p Spectroscopy of solid state dynamics
78.66.Tr Fullerenes and related materials

Observation of the transverse second‐harmonic magneto‐optic Kerr effect from Ni81Fe19 thin film structures

T. M. Crawford, C. T. Rogers, T. J. Silva, and Y. K. Kim

Appl. Phys. Lett. 68, 1573 (1996); http://dx.doi.org/10.1063/1.115703 (3 pages) | Cited 21 times

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We report second‐harmonic magneto‐optic Kerr measurements on air‐exposed, polycrystalline Ni81Fe19 thin films, ranging in thickness from 1 nm to 2 μm, on Al2O3 coated Si (001). For samples thicker than 20 nm, in the transverse Kerr geometry, we observe a factor of 4 change in second‐harmonic intensity upon magnetization reversal. For thin samples, we observe interference between second‐harmonic fields from the various interfaces and deterioration of ferromagnetism in the 1 and 2 nm films. Modeling suggests that the Ni81Fe19/Al2O3 interface has a larger second‐order susceptibility than the air/Ni81Fe19 surface. © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
75.47.De Giant magnetoresistance

Magnetothermopower in La0.67Ca0.33MnO3 thin films

M. Jaime, M. B. Salamon, K. Pettit, M. Rubinstein, R. E. Treece, J. S. Horwitz, and D. B. Chrisey

Appl. Phys. Lett. 68, 1576 (1996); http://dx.doi.org/10.1063/1.116686 (3 pages) | Cited 107 times

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We have measured the thermopower S(T,H) and resistivity ρ(T,H) of laser ablated La0.67Ca0.33MnO3 films, as a function of temperature and external magnetic field. On heating, a metal–insulator transition occurs at temperatures below the resistivity peak, observed via a jump between a low T regime, where S∝T, and a high T regime, where S∝1/T. An applied magnetic field shifts the transition in a postannealed sample to higher temperatures, causing a giant magnetothermopower effect 100×(S8T−S0T)/S8T=−1400%. Both S(T) and ρ(T) are activated at high temperatures, but with significantly different activation energies. We interpret this as an evidence of small polarons at high temperatures. © 1996 American Institute of Physics.
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73.50.Lw Thermoelectric effects
73.61.-r Electrical properties of specific thin films

Novel millimeter‐wave near‐field resistivity microscope

Michael Golosovsky and Dan Davidov

Appl. Phys. Lett. 68, 1579 (1996); http://dx.doi.org/10.1063/1.116685 (3 pages) | Cited 50 times

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We demonstrate a technique for contactless mapping of resistivity or dielectric constant of surfaces and films with a spatial resolution better than 100 μm. This technique may be used for the nondestructive testing of semiconducting wafers, conducting polymers, oxide superconductors, and printed circuits. The principle of operation consists of the scanning of a tiny millimeter‐wave antenna at a very small height above an inhomogeneous conducting surface and measuring the intensity and phase of the reflected (transmitted) wave. We use a specially designed resonant slit antenna and achieve subwavelength spatial resolution of λ/50. © 1996 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
85.30.De Semiconductor-device characterization, design, and modeling

c‐axis oriented ferroelectric thin films of PbTiO3 on Si by pulsed laser ablation

V. R. Palkar, S. C. Purandare, S. P. Pai, S. Chattopadhyay, P. R. Apte, R. Pinto, and M. S. Multani

Appl. Phys. Lett. 68, 1582 (1996); http://dx.doi.org/10.1063/1.116687 (3 pages) | Cited 22 times

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We have deposited single phase c‐axis oriented ferroelectric thin films of PbTiO3 on Si(100) by pulsed laser ablation technique in situ. It has been shown that the formation of a nonferroelectric, Pb2Ti2O6 pyrochlore phase at the interface could be avoided by raising the substrate temperature. © 1996 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Fg Pulsed laser ablation deposition
FREE

Addendum: ‘‘Fast Fourier transform of photoreflectance spectroscopy of δ‐doped GaAs’’ [Appl. Phys. Lett. 67, 2069 (1995)]

D. P. Wang and C. T. Chen

Appl. Phys. Lett. 68, 1585 (1996); http://dx.doi.org/10.1063/1.116688 (1 page) | Cited 2 times

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Abstract Unavailable
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78.66.Fd III-V semiconductors
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