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1 Apr 1996

Volume 68, Issue 14, pp. 1883-2024

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Analysis of reverse current–voltage characteristics of Ti/6H–SiC Schottky diodes

Chr. Schröder, W. Heiland, R. Held, and W. Loose

Appl. Phys. Lett. 68, 1957 (1996); http://dx.doi.org/10.1063/1.115638 (3 pages) | Cited 7 times

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Investigations on electrical properties of as fabricated and annealed titanium 6H–SiC Schottky contacts were performed by current–voltage (I–V) and capacitance–voltage (C–V) measurements in a temperature range of 100–460 K. Both the Schottky barrier height (SBH) Φb and the ideality factor n were found to depend on temperature and voltage. In addition, a systematic discrepancy between barrier heights extracted from I–V and C–V curves was observed. An explanation is given for the high leakage currents which are still a general problem of SiC Schottky diodes. On the basis of two analytical models we are able to describe this behavior assuming the formation of a very thin inhomogeneous interfacial layer between metal and semiconductor. © 1996 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions

Effect of interfacial dopant layer on transport properties of high purity InP

S. P. Watkins, H. D. Cheung, G. Knight, and G. Kelly

Appl. Phys. Lett. 68, 1960 (1996); http://dx.doi.org/10.1063/1.115639 (3 pages) | Cited 4 times

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Temperature dependent Hall measurements were used to investigate the role of unintentional interfacial dopant layers on the electrical properties of high purity InP. Secondary ion mass spectroscopy was used to measure the level of Si contamination present in several samples at the substrate‐epilayer interface. We show that the presence of interfacial dopant gives rise to two layer conduction whose temperature dependence mimics the freezeout behavior expected for a deep donor. However, the magnetic field dependence of the Hall data at low temperatures shows the expected behavior for the two layer model, including an order of magnitude variation in the apparent sheet concentration and Hall mobility over the range from 0.1 to 0.6 T at 77 K. We show that the true bulk mobility and carrier concentration can be accurately determined in samples with high interfacial contamination by performing Hall measurements at several magnetic fields at 77 K. © 1996 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Deep level transient spectroscopic and Hall effect investigation of the position of the vanadium acceptor level in 4H and 6H SiC

J. R. Jenny, J. Skowronski, W. C. Mitchel, H. M. Hobgood, R. C. Glass, G. Augustine, and R. H. Hopkins

Appl. Phys. Lett. 68, 1963 (1996); http://dx.doi.org/10.1063/1.115640 (3 pages) | Cited 31 times

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Hall effect, deep level transient spectroscopy (DLTS) and optical absorption measurements were employed in concert to determine the position of the vanadium acceptor level in vanadium and nitrogen doped 6H and 4H SiC. Hall effect results indicate that the acceptor position in 4H SiC is at 0.80 eV beneath the conduction band edge, and 0.66 eV for the 6H polytype. The DLTS signature of the defect in the 4H polytype showed an ionization energy of 0.80 eV and a capture cross section of 1.8×10−16 cm−2. The optical absorption measurements proved that the levels investigated are related to isolated vanadium, and therefore the vanadium acceptor level. Based on the DLTS measurements and secondary ion mass spectroscopy data, the maximum solubility of vanadium in SiC was determined to be 3.0×1017 cm−3. At these incorporation limits and with the depth of the level, the vanadium acceptor level could be used in the creation of semi‐insulating silicon carbide. © 1996 American Institute of Physics.
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71.55.Ht Other nonmetals

Fabrication of bi‐periodic sinusoidal structures on silicon

So Tanaka, Christopher C. Umbach, and Jack M. Blakely

Appl. Phys. Lett. 68, 1966 (1996); http://dx.doi.org/10.1063/1.115641 (3 pages) | Cited 9 times

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We illustrate a method for fabricating bi‐periodic quasi‐sinusoidal structures that are difficult to produce by conventional microfabrication techniques. By annealing bi‐periodic square wave structures in ultra‐high vacuum (UHV), the surface profile becomes quasi‐sinusoidal due to mass transport processes. The method is illustrated by the creation of 4 and 6 μm period structures on Si(001) through annealing at 1100 °C in UHV. Surface profiles are measured by atomic force microscopy (AFM). The structures produced may have applications in electronic or optical devices. © 1996 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Initial domain structure of hydride vapor phase epitaxy GaAs/Si(001) by using x‐ray standing waves

Tomoaki Kawamura, Hisataka Takenaka, Takayoshi Hayashi, Masami Tachikawa, and Hidefumi Mori

Appl. Phys. Lett. 68, 1969 (1996); http://dx.doi.org/10.1063/1.115642 (3 pages) | Cited 2 times

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The initial domain structure of hydride vapor phase epitaxy grown GaAs films on Si(001) was investigated using x‐ray standing waves. GaAs/Si(001) samples, 4 monolayers (ML) thick, grown on two different Si substrates were used: an epitaxial Si surface and a mechanochemically polished surface. X‐ray standing‐wave analysis revealed no single‐domain structure in either sample. The ratio of the two domains was almost 1:1 on the mechanochemically polished surface and 6:4 on the epitaxial Si surface. The dominant GaAs domain on the epitaxial surface was the same as that obtained on thicker GaAs films on an epitaxial Si surface. This suggests a rapid decrease in the GaAs domain during the early stages of growth on an epitaxial Si surface. © 1996 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Picosecond dynamic response of nanoscale low‐temperature grown GaAs metal‐semiconductor‐metal photodetectors

R. P. Joshi and J. A. McAdoo

Appl. Phys. Lett. 68, 1972 (1996); http://dx.doi.org/10.1063/1.115643 (3 pages) | Cited 6 times

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See Also: Erratum

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We have successfully fabricated and tested nanoscale metal‐semiconductor‐metal (MSM) devices with picosecond temporal response for photomixer applications around 830 nm. Previous reports on nanoscale MSM devices were not at this longer wavelength. The ultrafast response resulted from a low capacitance of about 1 fF, the use of low‐temperature grown (LT)‐GaAs active layers, and ultrashort finger separations. A two‐dimensional (2D) Monte Carlo model provided very accurate predictions of the transient MSM response. Values of the full width at half‐maxima photocurrents for the 50 and 100 nm devices were found to be 1.4 and 2 ps, respectively, in keeping with experimental observations. © 1996 American Institute of Physics.
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73.40.Sx Metal-semiconductor-metal structures
85.60.Gz Photodetectors (including infrared and CCD detectors)

Thermal stability of undoped strained Si channel SiGe heterostructures

H. Klauk, T. N. Jackson, S. F. Nelson, and J. O. Chu

Appl. Phys. Lett. 68, 1975 (1996); http://dx.doi.org/10.1063/1.115644 (3 pages) | Cited 19 times

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We have investigated the thermal stability of Si/SiGe n‐channel heterostructures. To eliminate the complication of dopant diffusion, we have fabricated undoped Si/SiGe heterostructure Hall effect devices. With no modulation doping used in our structures, the electron concentration in the strained Si channel is controlled from a back gate. Our devices show high electron mobility of up to 19 500 cm2/V s at 77 K and are stable with negligible 77 K mobility reduction after anneals at 800 °C for 30 min and at 950 °C for 3 min. These results conform well with a simulation of the diffusion of Ge into the Si channel. © 1996 American Institute of Physics.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Interface states in nitrogen incorporated gate oxides

Kanji Hirabayashi

Appl. Phys. Lett. 68, 1978 (1996); http://dx.doi.org/10.1063/1.115645 (3 pages) | Cited 1 time

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In this letter, we calculate the interface state energy in nitrogen incorporated gate oxides by using a one‐dimensional two‐band model and Penn’s model connecting the refractive index with typical band gap. We estimate the number of dangling bonds which we consider to be the origin of the interface states by the minimization of the free energy. The calculated results seem to explain qualitatively the recent experimental data on NO annealed oxides. © 1996 American Institute of Physics.
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73.20.-r Electron states at surfaces and interfaces

Electric field induced second harmonic generation spectroscopy on a metal‐oxide‐silicon structure

P. Godefroy, W. de Jong, C. W. van Hasselt, M. A. C. Devillers, and Th. Rasing

Appl. Phys. Lett. 68, 1981 (1996); http://dx.doi.org/10.1063/1.115646 (3 pages) | Cited 40 times

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Spectroscopic electric‐field‐induced second harmonic generation on a Si(111)–SiO2–Cr metal‐oxide‐silicon structure shows a bias‐independent ‘‘interface’’ resonance at 3.25 eV and a ‘‘bulk’’ resonance at 3.43 eV which is strongly bias dependent. The symmetry forbidden bulk dipole contribution becomes observable, and even dominating, due to the bias‐induced band‐bending that breaks the bulk inversion symmetry. The origin of these resonances is discussed, as well as the prospects for using second harmonic generation as a probe of metal‐oxide‐silicon characteristics. © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Lateral structuring of III‐V quantum well systems with pulsed‐laser‐induced transient thermal gratings

M. K. Kelly, C. E. Nebel, M. Stutzmann, and G. Böhm

Appl. Phys. Lett. 68, 1984 (1996); http://dx.doi.org/10.1063/1.115647 (3 pages) | Cited 13 times

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A two‐dimensional quantum well structure grown by molecular beam epitaxy has been laterally structured with an interference pattern from a high‐energy pulsed laser. The resulting thermal grating produces a reduction in the carrier density, which causes a lateral modulation in the band levels, with a period of 380 nm. Photoluminescence spectroscopy has been used for characterization. © 1996 American Institute of Physics.
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78.66.Fd III-V semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Highly photosensitive CdSe coatings by screen printing and sintering technique

O. Gomez‐Daza, V. M. García, M. T. S. Nair, and P. K. Nair

Appl. Phys. Lett. 68, 1987 (1996); http://dx.doi.org/10.1063/1.115648 (3 pages) | Cited 4 times

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CdSe powder precipitated from a chemical bath was screen printed on glass substrates using ZnCl2 as flux, with flux to powder ratio (FPR) varying in the range of 0.1 to 0.5 by weight, and propylene glycol as binder. After a subsequent sintering in air for 1 h at 450 °C, the screen printed coatings showed a photocurrent to darkcurrent ratio of ∼108 under tungsten halogen illumination of 2000 W m−2. X‐ray diffraction studies showed that sintering causes the conversion of the ZnCl2 flux into hexagonal phase ZnO which would fill the void among the CdSe particles. The optimum FPR and the sintering temperature to achieve maximum photosensitivity in the coatings are presented. The coatings may be used in the development of highly photosensitive light dependent resistors. © 1996 American Institute of Physics.
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73.50.Pz Photoconduction and photovoltaic effects
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

New observation on the formation of PbS clusters in zeolite‐Y

Wei Chen, Zhanguo Wang, Zhaojun Lin, Jiajun Qian, and Lanying Lin

Appl. Phys. Lett. 68, 1990 (1996); http://dx.doi.org/10.1063/1.115649 (3 pages) | Cited 5 times

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PbS clusters in zeolite‐Y have been prepared with the reaction of Pb2+‐ion‐exchanged zeolite‐Y with Na2S in solution at room temperature. Their absorption spectra show dramatic blue shifts from that of the bulk PbS. Obvious change of both the absorption edges and peak positions upon PbS concentrations have been observed. These phenomena provide evidences that PbS clusters have been formed within the zeolite. The absorption spectra show featureless structure and have no tails near the absorption edges. As the PbS loading density becomes higher, the absorption bands become stronger and sharpen. Order PbS clusters lattice with high quality might be formed in the supercages of zeolite‐Y. © 1996 American Institute of Physics.
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78.66.Vs Fine-particle systems
81.05.Rm Porous materials; granular materials

High rate melt texturing of Nd1−xBa2+xCu3O7−δ type superconductors

K. Salama, A. S. Parikh, and L. Woolf

Appl. Phys. Lett. 68, 1993 (1996); http://dx.doi.org/10.1063/1.115650 (3 pages) | Cited 29 times

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Melt texturing is one of the most prominent techniques available to fabricate bulk high‐temperature superconductors with superior current transport and magnetic properties. In the case of Y1Ba2Cu3Ox, melt textured samples can have a Jc on the order of 105 A/cm2 at 77 K and zero applied magnetic field, and in excess of 103 A/cm2 at 77 K and 30 T. However, a serious drawback of the melt textured Y1Ba2Cu3Ox compound, which severely restricts its application, is the very slow rate (1 mm/h) needed to develop the highly textured planar front necessary for optimum superconducting properties. RE‐123 compounds containing the rare earth element neodymium have been recently found to recrystallize much more rapidly, indicating the possibility of their high speed melt texturing. By processing bars (50 mm×5 mm×5 mm) of these compounds through a high‐temperature gradient, fully textured microstructures were obtained at rates up to 50 mm/h, which are more than 50 times faster than those employed in Y1Ba2Cu3Ox. After oxygen annealing, these textured bars have a Tc onset of 93 K and a transport Jc, at 77 K and zero applied magnetic field, on the order of 5000 A/cm2. These results are expected to increase significantly as more progress takes place. © 1996 American Institute of Physics.
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74.25.Sv Critical currents
81.10.Fq Growth from melts; zone melting and refining

Efficient Peltier refrigeration by a pair of normal metal/insulator/superconductor junctions

M. M. Leivo, J. P. Pekola, and D. V. Averin

Appl. Phys. Lett. 68, 1996 (1996); http://dx.doi.org/10.1063/1.115651 (3 pages) | Cited 10 times

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We suggest and demonstrate in experiment that two normal metal/insulator/superconductor (NIS) tunnel junctions combined in series to form a symmetric SINIS structure can operate as an efficient Peltier refrigerator. Specifically, it is shown that the SINIS structure with normal‐state junction resistances 1.0 and 1.1 kΩ is capable of reaching a temperature of about 100 mK starting from 300 mK. We estimate the corresponding cooling power to be 1.5 pW per total junction area of 0.8 μm2 at T=300 mK. © 1996 American Institute of Physics.
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07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices

Local electrochemical oxidation/reduction: First step towards a new lithography?

Jean‐Pierre Locquet, Frédéric Arrouy, Erich Mächler, Michel Despont, Peter Bauer, and Erica J. Williams

Appl. Phys. Lett. 68, 1999 (1996); http://dx.doi.org/10.1063/1.115617 (3 pages) | Cited 6 times

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Using c‐axis La2CuO4 thin films, we first demonstrate that the electrochemical oxidation mainly occurs along the c axis. Then we induce oxygen‐rich regions electrochemically into an otherwise oxygen‐deficient matrix. On a microscopic scale the extra oxygen introduced creates metallic and/or superconducting regions in the insulating matrix. Contrary to other lithographic techniques in which large amounts of material are either removed or deposited, this technique does not induce significant height differences. © 1996 American Institute of Physics.
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81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
85.40.Hp Lithography, masks and pattern transfer

Initial growth mechanism of a/b‐axis oriented YBa2Cu3O7−y film prepared by liquid phase epitaxy

Tasuku Kitamura, Izumi Hirabayashi, Shoji Tanaka, Yoshihro Sugawara, and Yuichi Ikuhara

Appl. Phys. Lett. 68, 2002 (1996); http://dx.doi.org/10.1063/1.115618 (3 pages) | Cited 3 times

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The a/b‐axis oriented YBa2Cu3O7−y (YBCO) films were fabricated by liquid phase epitaxy (LPE) on NdGaO3 (110) single‐crystalline substrates using a modified top‐seeded solution growth method. The x‐ray diffraction measurement, and transmission electron microscopic observation showed the epitaxial growth of YBCO film on the substrate. Scanning electron microscopic observation revealed the epitaxy of YBCO on the substrate and an initial growth mechanism of a/b‐axis oriented YBCO film by LPE. The film growth consists of the following stages; (1) nucleation and island growth, (2) lateral growth of island, and (3) layer formation due to coalescence of island. © 1996 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Observation of ferromagnetic resonance in a microscopic sample using magnetic resonance force microscopy

Z. Zhang, P. C. Hammel, and P. E. Wigen

Appl. Phys. Lett. 68, 2005 (1996); http://dx.doi.org/10.1063/1.115619 (3 pages) | Cited 74 times

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We report the observation of a ferromagnetic resonance signal arising from a microscopic (∼20 μm×40 μm) particle of thin (3μm) yttrium iron garnet film using magnetic resonance force microscopy (MRFM). The large signal intensity in the resonance spectra suggests that MRFM could become a powerful microscopic ferromagnetic resonance technique with a micron or sub‐micron resolution. We also observe a very strong nonresonance signal which occurs in the field regime where the sample magnetization readily reorients in response to the modulation of the magnetic field. This signal will be the main noise source in applications where a magnet is mounted on the cantilever. © 1996 American Institute of Physics.
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76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
76.90.+d Other topics in magnetic resonances and relaxations (restricted to new topics in section 76)

Giant fluctuation magnetoresistance in MnAs thin films

A. M. Grishin, S. I. Khartsev, and K. V. Rao

Appl. Phys. Lett. 68, 2008 (1996); http://dx.doi.org/10.1063/1.115620 (3 pages) | Cited 9 times

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We present the similarity in magnetic and transport properties of MnAs and perovskite La1−xCaxMnO3 thin films which exhibit a colossal magnetoresistance. Submicron thickness magnetic MnAs films exhibiting a continuous magnetic phase transition have been molecular beam epitaxy grown on sapphire substrates. A giant magnetoresistance (of order of 10% at H=10 kOe) arising from critical spin fluctuations in the vicinity of phase transition (T≊40 °C) is observed. The concomitant large pyromagnetic (d ln M/dT=−0.5 K−1) and pyroresistive (d ln R/dT=0.046 K−1) effects along with a high magnetoresistance make MnAs films promising for applications. © 1996 American Institute of Physics.
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75.47.De Giant magnetoresistance

Novel process for the production of large, stable photosensitivity in glass films

Kelly Simmons‐Potter, Barrett G. Potter, Dale C. McIntyre, and Paul D. Grandon

Appl. Phys. Lett. 68, 2011 (1996); http://dx.doi.org/10.1063/1.115621 (3 pages) | Cited 6 times

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Germanosilicate glasses exhibit a significant photosensitive response which has been linked to the presence of oxygen‐deficient germanium point defects in the glass structure. Based on this correlation, a process which produces highly photosensitive thin films without the use of hydrogen exposures, has been developed. This process, applicable to a wide range of desired xGeO2:bf>(1−x)SiO2 film composition, uses reactive atmosphere sputtering and allows extensive control of the degree of oxidation of the films during synthesis to produce dramatic demonstrations of photosensitivity. In preliminary tests, our films demonstrated ultraviolet‐induced refractive index perturbations (Δn) of up to −4×10−3 in the visible and −0.4×10−3 at 1.5 μm. Since no hydrogen exposure was necessary, this process yielded stable films which retained their predisposition for large photosensitivity for over one year of storage.
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42.70.Ce Glasses, quartz
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Broadband single‐electron tunneling transistor

E. H. Visscher, J. Lindeman, S. M. Verbrugh, P. Hadley, J. E. Mooij, and W. van der Vleuten

Appl. Phys. Lett. 68, 2014 (1996); http://dx.doi.org/10.1063/1.115622 (3 pages) | Cited 20 times

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A single‐electron tunneling transistor has been directly coupled on‐chip to a high electron mobility transistor. The high electron mobility transistor (HEMT) is used as an impedance matching circuit with a gain close to unity. The HEMT transformed the 1.4 MΩ output impedance of the single electron tunneling (SET) transistor by two orders of magnitude down to 5 kΩ, increasing its bandwidth to 50 kHz. This circuit makes it possible to observe the motion of individual electrons at high frequencies. The requirements for the bandwidth in high frequency applications is discussed. © 1996 American Institute of Physics.
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85.35.Gv Single electron devices

Auger electron spectroscopy of the hydrogen terminated chemical vapor deposited diamond surface

I. L. Krainsky, G. T. Mearini, V. M. Asnin, H. Sun, M. Foygel, and A. G. Petukhov

Appl. Phys. Lett. 68, 2017 (1996); http://dx.doi.org/10.1063/1.115623 (3 pages) | Cited 4 times

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A simultaneous study of Auger spectra and secondary electron emission from the chemical vapor deposited diamond films under extended electron beam exposure is presented. Up to a 1.2 eV increase in energy of the carbon Auger peak accompanied by the decrease of the total secondary electron yield has been found. Exposure to hydrogen has resulted in recovery of the both Auger peak position and secondary yield. First‐principles electronic structure calculations have shown that the effect is due to a change in the surface upper‐valence band local density of states of the diamond crystal which is dependent on the extent of hydrogen coverage of the surface. © 1996 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
79.20.Fv Electron impact: Auger emission

Micromachined room‐temperature microbolometers for millimeter‐wave detection

Arifur Rahman, Gert de Lange, and Qing Hu

Appl. Phys. Lett. 68, 2020 (1996); http://dx.doi.org/10.1063/1.115624 (3 pages) | Cited 5 times

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We have combined silicon micromachining technology with planar circuits to fabricate room‐temperature niobium microbolometers for millimeter‐wave detection. In this type of detector, a thin niobium film, with a dimension much smaller than the wavelength and fabricated on a 1 μm thick Si3N4 membrane, acts both as a radiation absorber and temperature sensor. Incident radiation is coupled into the microbolometer by a 0.37λ dipole antenna of center frequency 95 GHz with a 3 dB bandwidth of 15%, which is impedance matched with the Nb film. An electrical noise equivalent power (NEP) of 4.5×10−10 W/√Hz has been achieved. This is comparable to the best commercial room‐temperature millimeter‐wave detectors. © 1996 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
FREE

Erratum: ‘‘Nonlinear optical polymers with dipole moment aligned transverse to main chain’’ [Appl. Phys. Lett. 67, 2272 (1995)]

Naoto Tsutsumi, Osamu Matsumoto, Wataru Sakai, and Tsuyoshi Kiyotsukuri

Appl. Phys. Lett. 68, 2023 (1996); http://dx.doi.org/10.1063/1.116789 (1 page)

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Abstract Unavailable
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42.65.-k Nonlinear optics
42.70.Jk Polymers and organics
99.10.Cd Errata
FREE

Erratum: ‘‘Continuous wave operation of a vertical transition quantum cascade laser above T=80 K’’ [Appl. Phys. Lett. 67, 3057 (1995)]

Jéröme Faist, Federico Capasso, Carlo Sirtori, Deborah L. Sivco, Albert L. Hutchinson, and Alfred Y. Cho

Appl. Phys. Lett. 68, 2024 (1996); http://dx.doi.org/10.1063/1.116790 (1 page)

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Abstract Unavailable
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
99.10.Cd Errata
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