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8 Apr 1996

Volume 68, Issue 15, pp. 2035-2160

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Photopumped laser operation of a planar disorder‐ and native‐oxide‐defined AlAs–GaAs photonic lattice

M. J. Ries, E. I. Chen, and N. Holonyak

Appl. Phys. Lett. 68, 2035 (1996); http://dx.doi.org/10.1063/1.116294 (3 pages) | Cited 7 times

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Data are presented demonstrating photopumped laser operation of a planar photonic lattice (∼1 μm thick) that is comprised of 9 μm disks with 2 μm separation arranged in a two‐dimensional hexagonal close‐packed pattern. The active region of each disk is an AlAs (70 Å)–GaAs (30 Å) superlattice (100 periods). The disks are defined by impurity‐induced layer disordering, followed by wet oxidation (N2+H2O vapor, 400  °C), which surrounds each disk with a low‐refractive‐index AlGaAs native oxide. The photonic lattice exhibits laser operation within wide (Δλ∼17 Å) spectral bands that are spaced according to the disk modes, and that propagate light anisotropically in the plane of the lattice. In addition to the extended lattice, groups of seven disks are studied and are seen to display similar behavior. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Short‐pulse wavelength shifting by four wave mixing in passive InGaAsP/InP waveguides

A. M. Darwish, E. P. Ippen, H. Q. Le, J. P. Donnelly, S. H. Groves, and E. A. Swanson

Appl. Phys. Lett. 68, 2038 (1996); http://dx.doi.org/10.1063/1.116295 (3 pages) | Cited 8 times

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We have demonstrated wavelength conversion in the 1.5 μm regime using the near band gap nonlinearity of semiconductor quantum wells. In a 7.5 mm long passive InGaAsP/InP single quantum well waveguide, a wavelength shift of 20 nm has been obtained with −11 dB conversion efficiency using picosecond pulses. We confirmed the ultrafast nature of the nonlinearity by measuring the conversion efficiency as a function of the frequency shift. An order of magnitude increase in the value of n2 close to the band gap is observed compared with the off‐resonance value. © 1996 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Direct writing of GaAs optical waveguides by laser‐assisted chemical vapor deposition

K. S. Boutros, J. C. Roberts, and S. M. Bedair

Appl. Phys. Lett. 68, 2041 (1996); http://dx.doi.org/10.1063/1.116296 (2 pages) | Cited 4 times

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We demonstrate the direct writing of GaAs waveguide structures by selective area deposition using laser‐assisted chemical vapor deposition (LCVD). The multimode waveguides have a Gaussian shape and a very smooth surface, and they exhibit losses as low as 5.4 dB/cm. The LCVD technique offers the capability of selective growth of independent device structures, and hence the capability of monolithic integration of these devices for optoelectronic applications. © 1996 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.82.Cr Fabrication techniques; lithography, pattern transfer

n‐type delta‐doped quantum well lasers with extremely low transparency current density

O. Buchinsky, M. Blumin, R. Sarfaty, D. Fekete, I. Samid, and M. Yust

Appl. Phys. Lett. 68, 2043 (1996); http://dx.doi.org/10.1063/1.116297 (3 pages) | Cited 13 times

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It is demonstrated that placing an n‐type Te δ doping aside a single strained quantum well (QW) is an efficient way to control the initial carrier concentration in the QW and thus to lower transparency current density, Jtr, while preserving low internal losses. This is in contrast with uniform doping of the active area. Jtr of 11.3 A/cm<thin>2 and threshold current density of 54.4 A/cm2, which are both the lowest values reported to date for strained InxGa1−xAs/GaAs semiconductor lasers, were obtained. A somewhat higher injection efficiency is obtained when the energy levels are adjusted so that the electrons tunnel from the delta well directly into the QW. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Photo‐oxidation of electroluminescent polymers studied by core‐level photoabsorption spectroscopy

D. G. J. Sutherland, J. A. Carlisle, P. Elliker, G. Fox, T. W. Hagler, I. Jimenez, H. W. Lee, K. Pakbaz, L. J. Terminello, S. C. Williams, F. J. Himpsel, D. K. Shuh, W. M. Tong, J. J. Jia, T. A. Callcott, et al.

Appl. Phys. Lett. 68, 2046 (1996); http://dx.doi.org/10.1063/1.116298 (3 pages) | Cited 50 times

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The C 1s and O 1s core‐level photoabsorption spectra of poly[2‐methoxy,5‐(2′‐ethyl‐ hexoxy)‐1,4‐phenylene vinylene] (MEH‐PPV) before and after exposure O2 and broadband visible light were recorded to determine the degradation pathway for this polymer. The change in the O 1s spectra as a function of exposure demonstrates that the O adds to the polymer chain to form a carbonyl group. Exposure to only O2 or only light causes no change in the C 1s or O 1s spectra. In the C 1s spectra, the change in the dependence on the photon angle of incidence after exposure demonstrates that O attacks the polymer at the double bond in the vinyl group thereby altering the extended conjugation of the polymer. © 1996 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds

Fluorescence emission from high purity synthetic diamond anvil to 370 GPa

Jun Liu and Yogesh K. Vohra

Appl. Phys. Lett. 68, 2049 (1996); http://dx.doi.org/10.1063/1.116299 (3 pages) | Cited 11 times

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We report laser excited fluorescence in high purity synthetic diamond anvil to pressures of 370 GPa in a diamond anvil cell device. The nitrogen impurity level in this diamond is extremely low, and it allows us to study the stress effects on the optical transitions in diamond without interference from impurities. Pressure in the diamond anvil cell was measured by x‐ray diffraction using the platinum standard. Pressure dependence of the fluorescence peak was measured between 270 and 370 GPa in the visible spectral range. The variation of excitation laser wavelength shows clear cutoff in the excitation threshold in the 514–633 nm range at 370 GPa. © 1996 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
62.50.-p High-pressure effects in solids and liquids

Losses in polycrystalline silicon waveguides

J. S. Foresi, M. R. Black, A. M. Agarwal, and L. C. Kimerling

Appl. Phys. Lett. 68, 2052 (1996); http://dx.doi.org/10.1063/1.116300 (3 pages) | Cited 26 times

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The losses of polycrystalline silicon (polySi) waveguides clad by SiO2 are measured by the cutback technique. We report losses of 34 dB/cm at a wavelength of 1.55 μm in waveguides fabricated from chemical mechanical polished polySi deposited at 625 °C. These losses are two orders of magnitude lower than reported absorption measurements for polySi. Waveguides fabricated from unpolished polySi deposited at 625 °C exhibit losses of 77 dB/cm. We find good agreement between calculated and measured losses due to surface scattering. © 1996 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers

All‐optical integrated Mach–Zehnder switching due to cascaded nonlinearities

Y. Baek, R. Schiek, G. I. Stegeman, G. Krijnen, I. Baumann, and W. Sohler

Appl. Phys. Lett. 68, 2055 (1996); http://dx.doi.org/10.1063/1.116301 (3 pages) | Cited 17 times

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We demonstrate all‐optical switching using the cascaded second order nonlinearity in a fully integrated, asymmetric Mach Zehnder interferometer implemented in lithium niobate channel waveguides. We obtained an 8:1 switching ratio. © 1996 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Stable and efficient electroluminescence from a porous silicon‐based bipolar device

L. Tsybeskov, S. P. Duttagupta, K. D. Hirschman, and P. M. Fauchet

Appl. Phys. Lett. 68, 2058 (1996); http://dx.doi.org/10.1063/1.116302 (3 pages) | Cited 80 times

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A complete process compatible with conventional Si technology has been developed in order to produce a bipolar light‐emitting device. This device consists of a layer of light‐emitting porous silicon annealed at high temperature (800–900 °C) sandwiched between a p‐type Si wafer and a highly doped (n+) polycrystalline Si film. The properties of the electroluminescence (EL) strongly depend on the annealing conditions. Under direct bias, EL is detected at voltages of ∼2 V and current densities J∼1 mA/cm2. The maximum EL intensity is 1 mW/cm2 and the EL can be modulated by a square wave current pulse with frequencies ν≥1 MHz. No degradation has been observed during 1 month of pulsed operation. © 1996 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence

The role of vertical quantum wells in carrier trapping in v‐groove quantum wire lasers

C. Kiener, L. Rota, A. C. Maciel, J. M. Freyland, and J. F. Ryan

Appl. Phys. Lett. 68, 2061 (1996); http://dx.doi.org/10.1063/1.116303 (3 pages) | Cited 9 times

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We report a theoretical investigation of carrier trapping in GaAs v‐groove quantum wire structures. Our results show that trapping is fast in wires confined by AlGaAs alloy barriers where the growth process creates a Ga‐rich vertical quantum well at the center of the v‐groove: this acts as a highly effective scattering channel into quantum wires states. The results indicate that with suitable growth engineering, high‐efficiency quantum wire structures can be obtained. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

The effect of CO2 on the plasma remediation of NxOy

Ann C. Gentile and Mark J. Kushner

Appl. Phys. Lett. 68, 2064 (1996); http://dx.doi.org/10.1063/1.116304 (3 pages) | Cited 6 times

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Plasma remediation is being investigated for the removal of oxides of nitrogen (NxOy) from atmospheric pressure gas streams. In previous works we have investigated the plasma remediation of NxOy from N2/O2/H2O mixtures using repetitively pulsed dielectric barrier discharges. As combustion effluents contain large percentages of CO2, in this paper we discuss the consequences of CO2 in the gas mixture on the efficiency of remediation and on the end products. We find that there is a small increase in the efficiency of total NxOy remediation (molecules/eV) with increasing CO2 fraction, however the efficiency of NO remediation alone generally decreases with increasing CO2. This differential is more pronounced at low energy deposition per pulse. More remediation occurs through the reduction channel with increasing CO2 while less NO2 and HNOx are produced through the oxidation channel. CO is produced by electron impact of CO2 though negligible amounts of cyanides are generated. © 1996 American Institute of Physics.
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52.75.-d Plasma devices
82.40.-g Chemical kinetics and reactions: special regimes and techniques
52.80.-s Electric discharges

High electro‐optic side‐chain polymer by vapor deposition polymerization

C. C. Roberts, G.‐R. Yang, A. Cocoziello, Y.‐P. Zhao, G. Wnek, and T.‐M. Lu

Appl. Phys. Lett. 68, 2067 (1996); http://dx.doi.org/10.1063/1.116305 (3 pages) | Cited 4 times

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In this letter, we report high electro‐optic methylene di(phenylene isocyanate) (MDI)/DR19 side‐chain polymer film polymerization by vapor deposition polymerization. For samples deposited at substrate temperatures from 10 to 30 °C, the electro‐optic (EO) coefficient, r33, was measured to be 5 pm/V after poling. A lifetime of about one week was obtained. The highest EO effect observed were films deposited at −40 °C and polymerized after poling. The EO coefficient of these samples is about 24 pm/V while the lifetime is only about 30 min. The effect of substrate temperature, the ratio of monomers, and the poling temperature on the nonlinearity of the films are studied. © 1996 American Institute of Physics.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
78.66.Qn Polymers; organic compounds
78.20.Jq Electro-optical effects

Transmission electron microscopy study of interface and internal defect structures of homoepitaxial diamond

M. Tarutani, Y. Takai, R. Shimizu, T. Ando, M. Kamo, and Y. Bando

Appl. Phys. Lett. 68, 2070 (1996); http://dx.doi.org/10.1063/1.116306 (3 pages) | Cited 6 times

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Defect structures in a homoepitaxial diamond film grown by chemical vapor deposition have been studied by cross‐sectional transmission electron microscopy. Many interstitial dislocation loops are discerned in the (001) interface. The internal region grown on the (111) facet comprises stacking faults and twins, while that on the (001) face contains mainly interstitial dislocation loops aligned in rows along ∼〈112〉 directions. Fe and Si impurities were detected only at the interface by analytical electron microscopy. The origin of the defects is briefly discussed. © 1996 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.J- Point defects and defect clusters
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Reduced‐temperature crystallization of thin amorphous Fe80B20 films studied via empirical modeling of extended x‐ray absorption fine structure

V. G. Harris, S. A. Oliver, J. D. Ayers, B. N. Das, and N. C. Koon

Appl. Phys. Lett. 68, 2073 (1996); http://dx.doi.org/10.1063/1.116307 (3 pages) | Cited 4 times

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The evolution of the local atomic environment around Fe atoms in very thin (15 nm), amorphous, partially crystallized and fully crystallized films of Fe80B20 was studied using extended x‐ray absorption fine structure (EXAFS) measurements. The relative atomic fraction of each crystalline phase present in the annealed samples was extracted from the Fe EXAFS data by a least‐squares fitting procedure, using data collected from t‐Fe3B, t‐Fe2B, and α‐Fe standards. The type and relative fraction of the crystallization products follows the trends previously measured in Fe80B20 melt‐spun ribbons, except for the fact that crystallization temperatures are ≊200 K lower than those measured in bulk equivalents. This greatly reduced crystallization temperature may arise from the dominant role of surface nucleation sites in the crystallization of very thin amorphous films. © 1996 American Institute of Physics.
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61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
61.43.Dq Amorphous semiconductors, metals, and alloys

Passivation of Pb0 and Pb1 interface defects in thermal (100) Si/SiO2 with molecular hydrogen

A. Stesmans

Appl. Phys. Lett. 68, 2076 (1996); http://dx.doi.org/10.1063/1.116308 (3 pages) | Cited 46 times

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It is found that the passivation of both the Pb0 and Pb1 defects in (100)Si/SiO2 (grown at <750 °C) with molecular H2 may well be described by the same defect‐ H2 reaction‐limited kinetic model applying to interfacial Pb defects in (111) Si/SiO2 grown at 850 °C. Yet, whereas Pb was typified by a single‐valued activation energy Ea=1.66 eV, both Pb0 and Pb1 are found to exhibit a Gaussian spread σEa=0.15±0.03 eV around their respective mean Ea values, determined as 1.51 and 1.57±0.04 eV. Such a spread complies with previous electron spin resonance data on stress‐induced structural variations within the Pb bath. All three interface defects thus passivate comparably. © 1996 American Institute of Physics.
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81.65.Rv Passivation
61.72.J- Point defects and defect clusters
73.20.Hb Impurity and defect levels; energy states of adsorbed species
76.30.Mi Color centers and other defects

Persistent photoconductivity on ion irradiated carbon films prepared by plasma assisted chemical vapor deposition and determination of traps in the pseudo‐gap region

Somnath Bhattacharyya, K. S. R. Koteswara Rao, S. V. Subramanyam, and D. Kanjilal

Appl. Phys. Lett. 68, 2079 (1996); http://dx.doi.org/10.1063/1.115590 (3 pages)

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The defects created by ion beam irradiation in disordered conducting carbon films have been studied by the photoconductivity technique. A very complex distribution of traps created mostly by random displacement of carbon atoms by energetic ion beam from its polymeric matrix showed a persistent photoconductivity at low temperature. The decay time constant estimated from the photocurrent is around 15 s at 10 K. From the time constant and the intensity of photocurrent the density of traps and the corresponding activation energies are calculated. This report shows how slow decay of photocurrent can be applied to probe distribution of traps in the amorphous carbon due to ion bombardment in the most general case. © 1996 American Institute of Physics.
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71.55.Cn Elemental semiconductors
73.50.Pz Photoconduction and photovoltaic effects
61.80.Jh Ion radiation effects

Cation distribution in NiZn‐ferrite films via extended x‐ray absorption fine structure

V. G. Harris, N. C. Koon, C. M. Williams, Q. Zhang, M. Abe, and J. P. Kirkland

Appl. Phys. Lett. 68, 2082 (1996); http://dx.doi.org/10.1063/1.115591 (3 pages) | Cited 43 times

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We have applied extended x‐ray absorption fine structure (EXAFS) spectroscopy to study the cation distribution in a series of spin‐sprayed NiZn‐ferrite films. A least‐squares fitting of experimental EXAFS data with theoretical, multiple‐scattering, EXAFS data allowed the quantitative determination of site distributions for all transition metal cations. © 1996 American Institute of Physics.
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61.05.C- X-ray diffraction and scattering
75.50.Gg Ferrimagnetics

Surface and bulk point defect generation in Czochralski and float zone type silicon wafers

Wingra T. C. Fang, Tilden T. Fang, Peter B. Griffin, and James D. Plummer

Appl. Phys. Lett. 68, 2085 (1996); http://dx.doi.org/10.1063/1.115592 (3 pages) | Cited 11 times

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The origin of the defects which mediate dopant diffusion in silicon has never been conclusively established. Two primary theories, one favoring bulk generation and the other surface generation, have been proposed to explain the source of point defects. However, the inability to experimentally isolate surface effects from bulk effects has presented experimental determination of the dominant point defect source. An experimental structure employing multiple box‐shaped boron marker layers on a variety of silicon substrates has generated strong evidence for separate bulk and surface generation of point defects. A method of using dislocations generated by unstably strained SiGe layers as a sink of interstitials allows a determination of the relative magnitude of surface interstitial generation and bulk interstitial generation. Analysis reveals that the wafer surface under inert anneals is a significant source of point defects and that the interstitial source in the bulk is dependent on the oxygen concentration and precipitate size. © 1996 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
61.72.J- Point defects and defect clusters

Monolithic integration of quantum well infrared photodetector and modulator

Gilad Almogy, Yuanjian Xu, Andrew Tong, Ali Shakouri, and Amnon Yariv

Appl. Phys. Lett. 68, 2088 (1996); http://dx.doi.org/10.1063/1.115593 (3 pages) | Cited 3 times

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A modulation depth of 40% (0.7 dB/μm) was obtained with an infrared (10.6 μm) modulator consisting of a stack of 50 pairs of weakly coupled asymmetric quantum wells monolithically integrated with a quantum well infrared photodetector. The monolithic integration is shown to be a promising technique for the ‘‘ac’’ coupling of infrared focal‐plane arrays as well as for the direct study of the effects of electric fields and charge density variations on intersubband transitions. © 1996 American Institute of Physics.
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42.82.Bq Design and performance testing of integrated-optical systems

Raman scattering of porous structure formed on C+‐implanted silicon

Xing‐Long Wu, Feng Yan, Xi‐Mao Bao, Ning‐Sheng Li, Liang‐Sheng Liao, Ming‐Sheng Zhang, Shu‐Sheng Jiang, and Duan Feng

Appl. Phys. Lett. 68, 2091 (1996); http://dx.doi.org/10.1063/1.115594 (3 pages) | Cited 18 times

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Raman spectra of the porous structure with intense blue emission formed on C+‐implanted silicon were examined using a 488 nm line of Ar+ laser. A Raman peak with full width at half‐maximum of 37 cm−1 was obtained at about 492 cm−1. No Raman signals related to the β‐SiC were detected. The experimental result indicates that the porous structure mainly consists of Si nanometer crystallites. The existence of β‐SiC precipitates with nanometer sizes may be beneficial to the reduction of crystallite sizes and strengthen the Si skeleton, which will lead to an increase in the energy band gap of Si to the blue light emission. Using a model of phonon confinement, the obtained Raman spectra could be fitted on the basis of Si quantum crystallites and the average crystallite size was estimated to be 1.4 nm. © 1996 American Institute of Physics.
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78.30.Fs III-V and II-VI semiconductors
78.55.Mb Porous materials

Degradation of oxynitride gate dielectric reliability due to boron diffusion

D. Wristers, L. K. Han, T. Chen, H. H. Wang, D. L. Kwong, M. Allen, and J. Fulford

Appl. Phys. Lett. 68, 2094 (1996); http://dx.doi.org/10.1063/1.115595 (3 pages) | Cited 52 times

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In this letter, we report on the impact of the suppression of boron diffusion via nitridation of SiO2 on gate oxide integrity and device reliability. SiO2 subjected to rapid thermal nitridation in pure nitric oxide (NO) is used to fabricate thin oxynitride gate dielectrics. Both n+ polycrystalline silicon (polysilicon) gated n‐MOS (metal–oxide semiconductor) and p+‐polysilicon gated p‐MOS devices were subjected to anneals of different times to study the effect of dopant diffusion on gate oxide integrity. As expected, an advanced oxynitride gate dielectric will effectively alleviate the boron‐penetration‐induced flatband voltage instability in p+‐polysilicon gated p‐MOS capacitors due to the superior diffusion barrier properties. However, such improvements are observed in conjunction with some degradation of the oxide reliability due to the boron‐blocking/accumulation inside the gate dielectric. Results show that even though the oxide quality is slightly degraded for NO‐nitrided SiO2 with p+‐polysilicon gates, p‐MOSFETs (metal–oxide semiconductor field effect transistors) with these dielectrics still show improved interface stability as compared to conventional SiO2 due to the reduced boron penetration into the Si/SiO2 interface and underlying channel region. © 1996 American Institute of Physics.
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66.30.J- Diffusion of impurities
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Absence of Stark shift in strained Si1−xGex/Si type‐I quantum wells

Y. Miyake, J. Y. Kim, Y. Shiraki, and S. Fukatsu

Appl. Phys. Lett. 68, 2097 (1996); http://dx.doi.org/10.1063/1.115596 (3 pages) | Cited 20 times

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Excitonic photoluminescence in a transverse electric field has been studied in strained Si1−xGex/Si type‐I quantum wells (QWs) in the weak field regime. With increasing electric field, a steady blue‐shift of the free exciton emission energies has been observed, thereby suppressing the anticipated downward shift due to a quantum confined Stark effect. It is revealed that a field‐driven decrease of the exciton binding energies gives a good account of the experimental blue‐shift for a wide range of well widths, which is also in good agreement with variational calculations. We also find that the extremely small conduction band offset characteristic of stained Si1−xGex/Si type‐I QWs is responsible for the absence of the Stark red‐shift and the mixed dimensionality. © 1996 American Institute of Physics.
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78.66.Li Other semiconductors
78.55.Hx Other solid inorganic materials
78.20.Jq Electro-optical effects

AlGaN ultraviolet photoconductors grown on sapphire

D. Walker, X. Zhang, P. Kung, A. Saxler, S. Javadpour, J. Xu, and M. Razeghi

Appl. Phys. Lett. 68, 2100 (1996); http://dx.doi.org/10.1063/1.115597 (2 pages) | Cited 72 times

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AlxGa1−xN (0≤x≤0.50) ultraviolet photoconductors with a minimum cutoff wavelength shorter than 260 nm have been fabricated and characterized. The AlGaN active layers were grown on (00⋅1) sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The spectral responsivity of the GaN detector at 360 nm is about 1 A/W biased at 8 V at room temperature. The carrier lifetime derived from the voltage‐dependent responsivity is 0.13–0.36 ms. ©1996 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
78.66.Fd III-V semiconductors

Hydrogen passivation of Ca acceptors in GaN

J. W. Lee, S. J. Pearton, J. C. Zolper, and R. A. Stall

Appl. Phys. Lett. 68, 2102 (1996); http://dx.doi.org/10.1063/1.115598 (3 pages) | Cited 16 times

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Exposure to a hydrogen plasma at 250 °C of p‐type GaN (Ca) prepared by either Ca+ or Ca+ plus P+ co‐implantation leads to a reduction in sheet carrier density of approximately an order of magnitude (1.6×1012 cm−2 to 1.8×1011 cm−2), and an accompanying increase in hole mobility (6 cm2/V s to 18 cm2/V s). The passivation process can be reversed by posthydrogenation annealing at 400–500 °C under a N2 ambient. This reactivation of the acceptors is characteristic of the formation of neutral (Ca–H) complexes in the GaN. The thermal stability of the passivation is similar to that of Mg–H complexes in material prepared in the same manner (implantation) with similar initial doping levels. Hydrogen passivation of acceptor dopants in GaN appears to be a ubiquitous phenomenon, as it is in other p‐type semiconductors. © 1996 American Institute of Physics.
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71.55.Eq III-V semiconductors
61.72.uj III-V and II-VI semiconductors
81.65.Rv Passivation

InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, and Yasunobu Sugimoto

Appl. Phys. Lett. 68, 2105 (1996); http://dx.doi.org/10.1063/1.115599 (3 pages) | Cited 152 times

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InGaN multi‐quantum‐well (MQW) structure laser diodes fabricated from III‐V nitride materials were grown by metalorganic chemical vapor deposition on (111) MgAl2O4 substrates. The mirror facet for a laser cavity was formed by polishing III‐V nitride films grown on (111) MgAl2O4 substrates. As an active layer, the InGaN MQW structure was used. The laser threshold current density was 8 kA/cm2. At a current above laser threshold, stimulated emission was observed with a sharp peak of light output at 410 nm that had a full width at half‐maximum of 2.1 nm under pulsed current injection at room temperature. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
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