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22 Apr 1996

Volume 68, Issue 17, pp. 2317-2455

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Ion‐beam synthesis and stability of GaAs nanocrystals in silicon

C. W. White, J. D. Budai, J. G. Zhu, S. P. Withrow, and M. J. Aziz

Appl. Phys. Lett. 68, 2389 (1996); http://dx.doi.org/10.1063/1.116143 (3 pages) | Cited 8 times

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Sequential implantation of Ga and As into silicon followed by thermal annealing has been used to synthesize GaAs buried inside silicon. The GaAs exists in the form of nanocrystals which are three‐dimensionally oriented with respect to the silicon matrix. Thermodynamic criteria which are important in determining whether the desired compound will form are discussed. © 1996 American Institute of Physics.
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81.05.-t Specific materials: fabrication, treatment, testing, and analysis
61.80.Jh Ion radiation effects

Electrical characterization of Mg‐doped GaN grown by metalorganic vapor phase epitaxy

J. W. Huang, T. F. Kuech, Hongqiang Lu, and Ishwara Bhat

Appl. Phys. Lett. 68, 2392 (1996); http://dx.doi.org/10.1063/1.116144 (3 pages) | Cited 47 times

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We have applied frequency‐dependent capacitance measurements and admittance spectroscopy on GaN:Mg to study the electronic states associated with Mg doping. Metalorganic vapor phase epitaxy GaN:Mg samples with two different Mg doping levels were grown and thermally annealed in nitrogen. Lateral dot‐and‐ring Schottky diodes using Au/Ti were fabricated. Frequency‐dependent measurements on these diodes show that the capacitance is reduced at a higher frequency, most likely due to the inability of a deep center to maintain an equilibrium ionization state under a high‐frequency modulation. Admittance spectroscopy, in which the conductance is monitored as a function of temperature, verifies the existence of one impurity‐related acceptor level in the higher Mg‐doped sample with an activation energy of 136 meV. For the lower Mg‐doped sample, two acceptor levels at 124 and 160 meV were observed. We believe these levels are most probably associated with the Mg acceptor state itself, possessing energy levels which are very close to the results previously reported in the literature. © 1996 American Institute of Physics.
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71.55.Eq III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Simulation of cluster evaporation and transient enhanced diffusion in silicon

C. S. Rafferty, G. H. Gilmer, M. Jaraiz, D. Eaglesham, and H.‐J. Gossmann

Appl. Phys. Lett. 68, 2395 (1996); http://dx.doi.org/10.1063/1.116145 (3 pages) | Cited 70 times

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The evaporation of {311} self‐interstitial clusters has recently been linked to the phenomenon of transient enhanced diffusion in silicon. A theory of cluster evaporation is described, based on first‐order kinetic equations. It is shown to give a good account of the data over a range of temperatures. The theory simultaneously explains several of the unexpected features of transient enhanced diffusion, including the apparently steady level of the enhancement during its duration, and the dependence of the duration on implant energy and dose. The binding energy used to match the theory to data is in good agreement with molecular dynamics calculations of cluster stability in silicon. © 1996 American Institute of Physics.
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61.72.uf Ge and Si
61.72.J- Point defects and defect clusters

Strain relaxation mechanism of 250 °C grown Si0.33Ge0.67/Si(001) heterostructure

Seung‐Chang Lee

Appl. Phys. Lett. 68, 2398 (1996); http://dx.doi.org/10.1063/1.116146 (3 pages)

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The strain relaxation mechanism of a 500‐nm‐thick Si0.33Ge0.67 layer grown on Si(001) at 250 °C by molecular beam epitaxy has been investigated. During growth, the strain relaxation occurs without misfit dislocations. Moreover, a strained region coexists with a relaxed one in a single Si0.33Ge0.67 layer. In the relaxed region of Si0.33Ge0.67 layer, stacking faults, instead of misfit dislocations, are the major relief source of strain energy. These anomalous behaviors which are different from conventional relaxation mechanism have been interpreted by the characteristics of the stacking fault. © 1996 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Large energy shifts in GaAs‐AlGaAs quantum wells by proton irradiation‐induced intermixing

H. H. Tan, J. S. Williams, C. Jagadish, P. T. Burke, and M. Gal

Appl. Phys. Lett. 68, 2401 (1996); http://dx.doi.org/10.1063/1.116147 (3 pages) | Cited 41 times

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Proton irradiation and subsequent rapid‐thermal annealing are used to create intermixing in GaAs‐Al0.54Ga0.46As quantum wells of various thicknesses. Very large energy shifts (up to 200 meV) with no apparent saturation have been observed even up to a dose of about 4×1016 cm−2. This effect is explained in terms of the dilute irradiation damage and the evolution of discrete (point) defects during annealing. In comparison to heavy ion irradiation effects, high point defect fraction in the case of light ions leads to efficient intermixing with large energy shifts. Although much of the proton energy loss occurs across the quantum wells, the generated defect density is dilute, and hence good recovery in photoluminescence intensities is achieved after rapid thermal annealing. © 1996 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
61.80.Jh Ion radiation effects

Resonant Raman scattering in hexagonal GaN

D. Behr, J. Wagner, J. Schneider, H. Amano, and I. Akasaki

Appl. Phys. Lett. 68, 2404 (1996); http://dx.doi.org/10.1063/1.116148 (3 pages) | Cited 41 times

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We performed resonant Raman scattering in hexagonal GaN using discrete laser lines in the violet and UV spectral range for optical excitation. To tune the energetic position of the fundamental gap E0 of GaN relative to the exciting photon energy the sample temperature was varied between 77 and 870 K. Analyzing both Stokes and anti‐Stokes Raman spectra, the resonance profiles for Fröhlich‐induced one‐E1(LO) and two‐E1(LO) phonon scattering could be deduced, covering the energy range from 0.5 eV below the E0 gap up to the gap energy. The strength of deformation‐potential scattering by the A1(TO) mode was used as an internal reference. For excitation slightly above the E0 gap energy E1(LO) multiphonon scattering up to the fourth order was observed, which reflects the stronger polarity of the Ga‐N bond as compared to conventional III‐V semiconductors. © 1996 American Institute of Physics.
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78.30.Fs III-V and II-VI semiconductors
71.20.Nr Semiconductor compounds

Synthesis and characterization of heteroepitaxial diamond‐structured Ge1−xCx (x=1.5–5.0%) alloys using chemical vapor deposition

M. Todd, J. Kouvetakis, and David J. Smith

Appl. Phys. Lett. 68, 2407 (1996); http://dx.doi.org/10.1063/1.116149 (3 pages) | Cited 22 times

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We report growth of high quality heteroepitaxial Ge1−xCx alloys on Si(100) with C concentrations ranging from 1.5 to 5 at.%. The materials were obtained by reactions of the novel methylgermanes CH3GeH3 and HC(GeH3)3 with GeH4 at 470 °C using ultrahigh‐vacuum chemical‐vapor deposition techniques. The crystallinity, composition, and microstructure of the films were characterized by Rutherford backscattering, carbon‐resonance spectroscopy, and cross‐sectional transmission electron microscopy. Ge1−xCx (x=0.015–0.030) materials were deposited using CH3GeH3 and displayed excellent crystallinity. Films with higher C content were deposited using HC(GeH3)3. These films were epitaxial and of high crystallinity but they also displayed interfacial defects which sometimes persisted through the entire layer. Electron diffraction data and carbon‐ion channeling experiments indicated that carbon primarily occupied substitutional sites in the Ge diamond‐cubic lattice. Secondary ion mass spectrometry revealed that the films were pure and highly homogeneous. © 1996 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Room‐temperature, short‐wavelength (400–500 nm) photoluminescence from silicon‐implanted silicon dioxide films

W. Skorupa, R. A. Yankov, I. E. Tyschenko, H. Fröb, T. Böhme, and K. Leo

Appl. Phys. Lett. 68, 2410 (1996); http://dx.doi.org/10.1063/1.116150 (3 pages) | Cited 58 times

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Experiments are reported which explore the possibility of using low‐temperature, multiple‐energy Si+ ion implantation into thin SiO2 films on Si and subsequent short‐time thermal processing to form silicon nanostructures capable of yielding a high‐intensity emission in the short‐wavelength part of the visible spectrum. A room‐temperature short‐wavelength PL band of high intensity was found after double implantation with energies of 200 and 100 keV at a temperature of −20 °C to a total dose of 4.8×10 16 cm−2 (atomic concentration about 2×1021 cm−3) and subsequent furnace annealing at 400 °C for 0.5 h in forming gas or by flash lamp annealing at 1050 °C for 20 ms. © 1996 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
81.05.-t Specific materials: fabrication, treatment, testing, and analysis

Effects of interfacial chemistry on the formation of interfacial layers and faulted defects in ZnSe/GaAs

L. H. Kuo, K. Kimura, T. Yasuda, S. Miwa, C. G. Jin, K. Tanaka, and T. Yao

Appl. Phys. Lett. 68, 2413 (1996); http://dx.doi.org/10.1063/1.116151 (3 pages) | Cited 43 times

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Existence of Zn‐As and Ga‐Se interfacial layers were suggested by transmission electron microscopy in Zn treated and Se treated or reacted ZnSe/GaAs interfaces, respectively. High densities of As precipitates and Shockley partials were introduced in films with Zn treatment on a c(4×4) As‐rich GaAs surface. In addition, high densities of vacancies and Shockley partials were obtained in samples with a Se‐reacted ZnSe/GaAs interface. Formation of the Shockley partials may originate from the stacking errors induced by disordering of Zn‐ or Ga‐interstitials on the GaAs surface. © 1996 American Institute of Physics.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
42.55.Px Semiconductor lasers; laser diodes

Charge‐free etching process using positive and negative ions in pulse‐time modulated electron cyclotron resonance plasma with low‐frequency bias

Hiroto Ohtake and Seiji Samukawa

Appl. Phys. Lett. 68, 2416 (1996); http://dx.doi.org/10.1063/1.116152 (2 pages) | Cited 22 times

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Charge build‐up on a substrate is greatly reduced by using a pulse‐time modulated electron cyclotron resonance generated plasma of more than 50 μs with 600 kHz radio frequency (RF) substrate bias. Negative ions are generated in the afterglow plasma due to decay in electron temperature. Low‐frequency RF bias directly accelerates both negative and positive ions from the plasma onto the substrate and reduces self‐bias voltage, thus reducing charge accumulation on the substrate. This method shows promise for charge‐free etching processes in the production of ultra large scale integrated circuits. © 1996 American Institute of Physics.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
85.40.Hp Lithography, masks and pattern transfer

Incorporation of hydrogen in nitrogen and arsenic doped ZnSe epitaxial layers grown by organometallic vapor phase epitaxy

Edith D. Bourret‐Courchesne

Appl. Phys. Lett. 68, 2418 (1996); http://dx.doi.org/10.1063/1.116153 (3 pages) | Cited 6 times

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The incorporation of hydrogen has been investigated using secondary ion mass spectroscopy in arsenic and nitrogen doped ZnSe epitaxial layers grown by organometallic vapor phase epitaxy in a metalhydride free environment. Diisopropylselenide, diethylzinc, tertiarybutylarsine, and tertiarybutylamine were used as precursors. Ammonia was used to provide comparative data for the analysis of the results obtained with tertiarybutylamine. The carrier gas was either hydrogen or nitrogen. The arsenic doped samples grown in nitrogen carrier gas have a low concentration of hydrogen while hydrogen is incorporated in large quantity in samples grown with hydrogen carrier gas. High concentrations of nitrogen are obtained with tertiarybutylamine at low growth temperature and with hydrogen carrier gas. Low concentrations of nitrogen are obtained with tertiarybutylamine in presence of nitrogen carrier gas. Hydrogen incorporation is reduced when using tertiarybutylamine instead of ammonia as dopant source. © 1996 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
42.55.Px Semiconductor lasers; laser diodes

Role of codopants in the luminescent output from Si:Er

Frederick G. Anderson

Appl. Phys. Lett. 68, 2421 (1996); http://dx.doi.org/10.1063/1.116154 (3 pages) | Cited 10 times

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A crystal‐field model for the electronic structure of the Er3+ ion in silicon is presented. The parameters within the model are adjusted in order that the Stark energy splittings within the f shell reproduce the observed spectral features in a Si:Er sample that is codoped with nitrogen. The dominant crystal field possesses tetrahedral symmetry. Several additional spectral features are attributed to local mode vibrational sidebands. From this analysis, I conclude that the role of the codopants is to isolate the Er ion so that the relaxation energy does not go into the production of lattice phonons. © 1996 American Institute of Physics.
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71.55.Cn Elemental semiconductors
71.70.Ch Crystal and ligand fields

Shallow donor neutralization in CdTe:In by atomic hydrogen

Suma Gurumurthy, H. L. Bhat, B. Sundersheshu, R. K. Bagai, and Vikram Kumar

Appl. Phys. Lett. 68, 2424 (1996); http://dx.doi.org/10.1063/1.116155 (3 pages) | Cited 7 times

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Passivation effects in In doped n‐CdTe upon exposure to rf hydrogen plasma are studied by electrical and photoluminescence measurements and were found to be maximum at about 150 °C. Depth profiling by capacitance‐voltage measurements show passivation of approximately an order of magnitude at 150 °C and 50% at 170 °C. No visual surface damage is seen. Reverse bias annealing experiments show that atomic hydrogen drifts in a charged state in n‐CdTe, with reactivation kinetics of the donors different from the other well studied semiconductors. Manifestation of the donor passivation in photoluminescence is seen by the reduction of the donor bound luminescence. © 1996 American Institute of Physics.
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81.65.Rv Passivation
71.55.Gs II-VI semiconductors

Direct scanning tunneling microscopy observation of non‐unit‐cell growth of YBa2Cu3O7−δ thin films

T. Haage, Q. D. Jiang, M. Cardona, H.‐U. Habermeier, and J. Zegenhagen

Appl. Phys. Lett. 68, 2427 (1996); http://dx.doi.org/10.1063/1.116156 (3 pages) | Cited 20 times

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The surface morphology of thin YBa2Cu3O7−δ films grown on LaSrAlO4 (001) and SrTiO3 (001) by pulsed laser deposition was studied by scanning tunneling microscopy (STM). STM was carried out in ultra high vacuum without prior exposure of the films to air. In the STM images, stacks of terraces which are separated by steps of various heights were observed. Some steps were shorter than the YBa2Cu3O7−δ unit cell height c≊1.2 nm. We present evidence of the fact that the YBa2Cu3O7−δ thin film surface exhibits different terminations. The microstructure revealed from the STM images implies a non‐unit‐cell growth mechanism. © 1996 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition
74.78.-w Superconducting films and low-dimensional structures

Molecular beam epitaxy growth of a layered cuprate having a multiple fluorite‐type block for use in trilayer junctions

Sumio Ikegawa and Yuichi Motoi

Appl. Phys. Lett. 68, 2430 (1996); http://dx.doi.org/10.1063/1.116157 (3 pages) | Cited 11 times

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(Pb2Cu)Sr2(Eu,Ce)nCu2Oy: n=3–8 (Pb‐32n2 phase) has been synthesized by sequential deposition using the molecular beam epitaxy technique. This layered cuprate having a multiple‐stacked fluorite‐type block is thought to be suitable for use in trilayer Josephson junctions, from the viewpoints of atomic arrangement at the superconductor‐insulator interface and the need for an atomically flat thin insulator. The thickness of the fluorite block, which will act as an intra‐cell barrier, has been controlled up to 2.2 nm (n=8). Pb‐3272/Pb‐3212 epitaxial superlattices have also been prepared. The two‐dimensional growth with the growth unit of a unit cell is observed by in situ reflection high‐energy electron diffraction. © 1996 American Institute of Physics.
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85.25.Cp Josephson devices
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
74.78.-w Superconducting films and low-dimensional structures

The intrinsic determinants of the critical current in SIS′ and SIS high‐Tc Josephson junctions

R. S. Gonnelli, D. Puttero, and G. A. Ummarino

Appl. Phys. Lett. 68, 2433 (1996); http://dx.doi.org/10.1063/1.116158 (3 pages) | Cited 5 times

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We discuss the influence of a depressed order parameter at the surface of a high‐Tc superconductor on the temperature dependence of the Josephson critical current in SIS′ and SIS junctions, where S denotes the high‐Tc superconductor, S′ a conventional one, and I the insulating layer. The comparison with experimental data of planar YBCO‐based SIS′ and SIS junctions shows that, when the quality of the junction interfaces is particularly good, the fit by using the depressed‐gap models can accurately reproduce the experimental Ic(T) curves. As a consequence, the surface depression of the order parameter is the most plausible cause for the intrinsic deviations of the IcRN products from the ideal BCS values in this kind of junctions. © 1996 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
74.45.+c Proximity effects; Andreev reflection; SN and SNS junctions

The shape of a nanoprobe determined by imaging spherical clusters

M. Sumetskii, A. A. Kornyshev, and U. Stimming

Appl. Phys. Lett. 68, 2436 (1996); http://dx.doi.org/10.1063/1.116159 (3 pages) | Cited 4 times

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We suggest a method to restore the shape of the tip of a scanning probe microscope at the nanometer scale by averaging images of spherical clusters distributed along the sample surface and present the corresponding theoretical framework for the treatment of experimental data. © 1996 American Institute of Physics.
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07.79.-v Scanning probe microscopes and components
68.37.-d Microscopy of surfaces, interfaces, and thin films

Transparent zinc oxide films prepared by electrochemical reaction

Masanobu Izaki and Takashi Omi

Appl. Phys. Lett. 68, 2439 (1996); http://dx.doi.org/10.1063/1.116160 (2 pages) | Cited 198 times

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Transparent zinc oxide (ZnO) films has been cathodically deposited on conductive glasses from a simple aqueous zinc nitrate electrolyte kept at 335 K. ZnO films prepared had a wurtzite structure and exhibited an optical band gap energy of 3.3 eV which is characteristic of ZnO. A 2‐μm‐thick ZnO film with an optical transmittance of 72% has been deposited by electrolysis only for approximately 20 minutes at the cathodic potential of −1.0 V compared with the Ag/AgCl reference electrode. © 1996 American Institute of Physics.
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81.15.Pq Electrodeposition, electroplating

Study of a novel C60−2,6‐bis(2,2‐bicyanovinyl)pyridine complex thin film

M. Ouyang, K. Z. Wang, H. X. Zhang, Z. Q. Xue, C. H. Huang, and D. Qiang

Appl. Phys. Lett. 68, 2441 (1996); http://dx.doi.org/10.1063/1.116161 (3 pages) | Cited 11 times

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A novel complex thin film of 2,6‐bis(2,2‐bicyanovinyl)pyridine (BDCP) and C60 has been fabricated by vacuum coevaporation of BDCP and C60 from two different evaporation sources. The C60‐BDCP thin films have shown totally different optical and electronic properties from the films of both the BDCP and C60. Stable and reproducible electric bistable properties have been observed in sandwichlike device Ag/C60‐BDCP/Ag. The films are characterized by several methods including high‐resolution scanning electron microscopy, x‐ray diffraction, UV‐visible absorption and infrared transmission spectroscopy. © 1996 American Institute of Physics.
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73.61.-r Electrical properties of specific thin films
78.66.Sq Composite materials

Analysis of capacitance‐voltage characteristics for two‐dimensional multi‐conductor in liquid crystal displays

Kun‐Wei Lin, Han‐Ping D. Shieh, and Feng‐Cheng D. Su

Appl. Phys. Lett. 68, 2444 (1996); http://dx.doi.org/10.1063/1.116162 (3 pages) | Cited 4 times

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The capacitance voltage characteristics for the two‐dimensional multi‐conductor in liquid crystal displays (LCDs) are numerically derived by the method of successive over relaxation (SOR). The nonlinear and anisotropic properties of dielectric constant in the LC cell depend on the orientation of LC molecules under the influence of inhomogeneous electric field. An LC continuum theory implemented by tensor takes elastic anisotropy and inhomogeneous electric field into consideration to calculate the two‐dimensional molecule orientations and potential distribution in LCDs. The dependence of capacitance on applied voltages and the geometric of LC cell is quantitatively described. Nonlinear capacitance results in capacitive coupling which causes flicker and adversely degrades image retention in LCD. © 1996 American Institute of Physics.
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61.30.-v Liquid crystals
42.79.Kr Display devices, liquid-crystal devices

Conductive thin films of bis(ethylenedithio)tetrathiafulvalene salt fabricated by a successive dry‐wet process

Yasuhiro F. Miura, Satomi Ohnishi, Masahiko Hara, Hiroyuki Sasabe, and Wolfgang Knoll

Appl. Phys. Lett. 68, 2447 (1996); http://dx.doi.org/10.1063/1.116163 (3 pages) | Cited 3 times

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Conductive molecular thin films of a BEDT‐TTF [bis(ethylenedithio)tetrathiafulvalene] salt have been fabricated by a successive dry‐wet process. Neutral BEDT‐TTF molecules were evaporated onto an electrode‐coated substrate under ultrahigh‐vacuum conditions. Then an electrochemical doping process was carried out: the as‐deposited film was immersed in an aqueous solution of LiClO4 and was doped with ClO4− anions. The lateral conductivity of the film was in the range 10−3–10−4 S/cm at room temperature. We have demonstrated that the successive dry‐wet process has the potential to be a versatile technique to fabricate conductive thin films based on BEDT‐TTF salts. © 1996 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Electron‐emission‐enhanced diamond nucleation on Si by hot filament chemical vapor deposition

Qijin Chen and Zhangda Lin

Appl. Phys. Lett. 68, 2450 (1996); http://dx.doi.org/10.1063/1.116164 (3 pages) | Cited 30 times

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Diamond nucleation on mirror‐polished Si was enhanced by electron emission using hot filament chemical vapor deposition. The nucleation density was 108 cm−2. The mechanism of diamond nucleation is carefully discussed. It is surmised that it is electron emission that is responsible for the enhancement of the diamond nucleation in our experiments. © 1996 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
FREE

Comment on ‘‘Electrical properties of epitaxially grown CdTe passivation for long‐wavelength HgCdTe photodiodes’’ [Appl. Phys. Lett. 65, 2725 (1994)]

R. K. Bhan, V. Dhar, P. K. Chaudhury, P. K. Basu, and A. V. R. Warrier

Appl. Phys. Lett. 68, 2453 (1996); http://dx.doi.org/10.1063/1.116165 (2 pages) | Cited 4 times

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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.60.Dw Photodiodes; phototransistors; photoresistors
FREE

Response to ‘‘Comment on ‘Electrical properties of epitaxially grown CdTe passivation for long‐wavelength HgCdTe photodiodes’ ’’ [Appl. Phys. Lett. 68, 2453 (1996)]

G. Bahir, V. Ariel, V. Garber, D. Rosenfeld, and A. Sher

Appl. Phys. Lett. 68, 2455 (1996); http://dx.doi.org/10.1063/1.116318 (1 page) | Cited 1 time

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Abstract Unavailable
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.60.Dw Photodiodes; phototransistors; photoresistors
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