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6 May 1996

Volume 68, Issue 19, pp. 2603-2761

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Temperature profile of fiber tips used in scanning near‐field optical microscopy

M. Stähelin, M. A. Bopp, G. Tarrach, A. J. Meixner, and I. Zschokke‐Gränacher

Appl. Phys. Lett. 68, 2603 (1996); http://dx.doi.org/10.1063/1.116195 (3 pages) | Cited 52 times

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We have measured the temperature profile of aluminum coated fiber tips used for illumination‐mode scanning near‐field optical microscopy as a function of the optical input power with a micron sized thermocouple. The temperature coefficients vary from 20 K/mW for tips with a large cone angle to 60 K/mW for the narrow long ones. Temperatures of up to ≊470 °C have been measured close to the aperture with an optical input power of several mW before thermal damage of the coating occurred. The temperature profiles are analyzed theoretically taking into account the optical absorption, the thermal conductivity of the tip, as well as the heat loss to the environment. © 1996 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes

Transparent organic light emitting devices

G. Gu, V. Bulović, P. E. Burrows, S. R. Forrest, and M. E. Thompson

Appl. Phys. Lett. 68, 2606 (1996); http://dx.doi.org/10.1063/1.116196 (3 pages) | Cited 196 times

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We report the demonstration of transparent organic light emitting devices (OLEDs) which are ∼70% transparent throughout the visible spectrum when switched off, and emit light from both sides with a total external quantum efficiency of ∼0.1% when turned on. The devices are Alq3‐based single heterostructure OLEDs grown on an ITO‐coated glass substrate with a top electrode composed of a very thin layer of Mg–Ag and an overlaying ITO film. The top electrode is both electron injecting and transparent. The transparent OLEDs are expected to be useful in high‐resolution full‐color displays, as well as for helmet‐mounted, windshield‐mounted, or other ‘‘head‐up’’ display applications. © 1996 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence

Wavelength conversion by difference frequency generation in AlGaAs waveguides with periodic domain inversion achieved by wafer bonding

S. J. B. Yoo, C. Caneau, R. Bhat, M. A. Koza, A. Rajhel, and Neo Antoniades

Appl. Phys. Lett. 68, 2609 (1996); http://dx.doi.org/10.1063/1.116197 (3 pages) | Cited 72 times

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Wavelength conversion by difference‐frequency generation is achieved in a periodically domain reversed AlGaAs waveguide. The AlGaAs waveguide is epitaxially grown on a template substrate where a periodic crystal domain inversion is achieved using wafer bonding, selective etching, and organometallic chemical vapor deposition. Wavelength conversion experiments on a fabricated buried heterowaveguide showed a 90 nm conversion bandwidth, polarization diversified operation, and polarization independent conversion efficiency. The experimental results also showed linearity and spectral inversion, which imply transparency to signal formats including analog and frequency modulation. Simultaneous conversion of multiple input wavelengths with no measurable cross talk is also demonstrated. © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters

Tailoring a high‐transmission fiber probe for photon scanning tunneling microscope

T. Saiki, S. Mononobe, M. Ohtsu, N. Saito, and J. Kusano

Appl. Phys. Lett. 68, 2612 (1996); http://dx.doi.org/10.1063/1.116198 (3 pages) | Cited 83 times

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Transmission efficiency of a fiber probe used in photon scanning tunneling microscope is evaluated as a function of aperture diameter. The apertured probe has been fabricated by chemical etching technique and metal coating. By comparing two types of probes with different cone angles, we determine the most influential factor in the transmission property of the metal‐cladding tapered waveguide. A long tip with high efficiency is developed by a multistep etching method so as to be suitable during actual scanning operation. Photoluminescence imaging of lateral p‐n junctions on the GaAs substrate is demonstrated in the illumination‐collection hybrid mode operation of photon scanning tunneling microscope. © 1996 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Dynamics of photoinduced Faraday rotation in semimagnetic semiconductors

R. Pankoke, C. Buss, S. Hugonnard‐Bruyère, P. Leisching, R. Frey, and C. Flytzanis

Appl. Phys. Lett. 68, 2615 (1996); http://dx.doi.org/10.1063/1.116199 (3 pages) | Cited 5 times

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Time‐resolved Faraday rotation measurements on a nanosecond time scale are performed for Cd1−xMnxTe samples grown by two different techniques. The dependence of the observed photoinduced dynamics on the purity, Mn++ concentration (x=0.03, 0.10, 0.15, 0.3), excitation density, and temperature (100–290 K) reveals several novel features. The relaxation for pure samples is monoexponential at 100 K and is slowing down with increasing temperature, in strong contrast to impure samples, where the opposite behavior is observed. All experimental observations can be well explained in a simple model based on rate equations for the free‐carrier populations, provided that recombination centers and impurity traps are included in the model. © 1996 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
78.20.Ls Magneto-optical effects

Polarization dependent recordings of surface relief gratings on azobenzene containing polymer films

X. L. Jiang, L. Li, J. Kumar, D. Y. Kim, V. Shivshankar, and S. K. Tripathy

Appl. Phys. Lett. 68, 2618 (1996); http://dx.doi.org/10.1063/1.116200 (3 pages) | Cited 71 times

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Experimental studies on the recording of surface relief gratings on azobenzene containing polymer films using laser beams with different polarizations were carried out. The results indicate that the localized variations of light intensity and alternation of the resultant electric field polarization in the film are essential to the formation of the surface relief gratings. © 1996 American Institute of Physics.
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42.70.Jk Polymers and organics
42.70.Ln Holographic recording materials; optical storage media
42.79.Dj Gratings

Widely tunable single‐frequency erbium–ytterbium phosphate glass laser

S. Taccheo, P. Laporta, and C. Svelto

Appl. Phys. Lett. 68, 2621 (1996); http://dx.doi.org/10.1063/1.116201 (3 pages) | Cited 38 times

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A tunable, single‐frequency, diode‐pumped miniature Er:Yb:glass laser of high power is described. The laser exhibits two intervals of continuous tuning, from 1549 to 1563 nm (Δλ=14 nm) and from 1531 to 1540 nm (Δλ=9 nm), respectively. For an input pump power of 140 mW, a single frequency output power of 20 mW at 1563 nm has been obtained. The tuning characteristics are found to be strictly related to the gain–loss balance of the laser cavity. © 1996 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.-v Laser optical systems: design and operation

Direct measurements of spectral and temporal characteristics of dye lasing in ultralow‐Q microcavities

Nguyen Dai Hung, Yusaburo Segawa, and Yves H. Myer

Appl. Phys. Lett. 68, 2624 (1996); http://dx.doi.org/10.1063/1.116202 (3 pages) | Cited 1 time

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The time and spectral characteristics of above‐threshold lasing operation of different dye solutions in ultralow‐Q microcavities are directly and simultaneously measured with a picosecond two‐dimensional streak camera. A nonoscillatory spectrotemporal evolution with a very fast damping of the modes in the wings of the laser spectrum as a basic process of the multimode laser action is exposed. Application to single short‐pulse production is shown. The characteristics of the single‐mode laser operation are also reported. © 1996 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers
42.55.Mv Dye lasers
42.60.-v Laser optical systems: design and operation

Droplet‐target laser‐plasma source for proximity x‐ray lithography

L. Malmqvist, L. Rymell, and H. M. Hertz

Appl. Phys. Lett. 68, 2627 (1996); http://dx.doi.org/10.1063/1.116203 (3 pages) | Cited 15 times

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A compact, high‐brightness and practically debris‐free laser‐plasma soft x‐ray source for proximity x‐ray lithography is described. The target of the source is small liquid fluorocarbon droplets injected into vacuum with a piezoelectrically vibrated nozzle. Emission from helium‐ and hydrogenlike fluorine in the 1.2–1.7 nm wavelength range was determined to ∼2×1012 photons/(sr‐pulse), which corresponds to a conversion efficiency of ∼5% of the 70 mJ laser pulse. Exposure of a copolymer of PMMA–MAA confirms the measured photon flux. Debris production was approximately 70 pg/sr pulse. The applicability of the source for dedicated lithography systems is discussed. © 1996 American Institute of Physics.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
52.59.Ye Plasma devices for generation of coherent radiation

Numerical analysis of 1.54 μm double‐fused vertical‐cavity lasers operating continuous‐wave up to 33 °C

Joachim Piprek, Dubravko I. Babic, and John E. Bowers

Appl. Phys. Lett. 68, 2630 (1996); http://dx.doi.org/10.1063/1.116204 (3 pages) | Cited 8 times

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The first vertical‐cavity surface‐emitting laser diodes operating continuous‐wave at room temperature at 1.54 μm emission wavelength are analyzed using a comprehensive numerical simulation procedure. These lasers employ strain‐compensated InGaAsP multi‐quantum wells sandwiched between GaAs/AlGaAs mirrors that are double‐fused on the InP spacer layers at both sides. The model includes finite element electro‐thermal simulation, transfer‐matrix optical analysis, and k⋅p band structure calculations. Internal laser parameters are obtained by fitting experimental data at different heat sink temperatures. Intervalence band absorption is found to be the dominating loss mechanism that restricts cw operation. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Strongly directed single mode emission from organic electroluminescent diode with a microcavity

Shizuo Tokito, Koji Noda, and Yasunori Taga

Appl. Phys. Lett. 68, 2633 (1996); http://dx.doi.org/10.1063/1.116205 (3 pages) | Cited 16 times

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The strongly directed spontaneous emission along the optical axis of an organic electroluminescent (EL) diode with a typical emitting material, tris(8‐quinolinolato) aluminum, is realized with a planner microcavity structure. The structure of the microcavity EL diode is designed to have a resonance condition in which the total optical length is 3/2λ and the resonance wavelength λ is located at shorter wavelength side of a natural emission spectrum of a noncavity EL diode. © 1996 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors

Grazing incidence x‐ray diffraction studies of the initial growth of Pd on MgO(001)

H. Fornander, J. Birch, L. Hultman, L.‐G. Petersson, and J.‐E. Sundgren

Appl. Phys. Lett. 68, 2636 (1996); http://dx.doi.org/10.1063/1.116206 (3 pages) | Cited 16 times

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Grazing incidence x‐ray diffraction (GIXRD) using a standard laboratory x‐ray source was used to study the structure of thin palladium films, with nominal thicknesses varying between 0.5 and 40 nm. The films were grown by electron beam evaporation on MgO(001) at 600 °C. Epitaxial [001]‐oriented grown Pd was detected for all the films. For nominal film thicknesses <2.5 nm, the lateral Pd d020 plane distance was expanded as much as ∼0.8%, whereas thicker films had bulk Pd lattice spacing. The average Pd particle size, estimated from the peak broadening, was found to increase from 4 to 100 nm as the film thickness increased from 0.5 to 20 nm. For 2.5 and 10 nm thick films, four 111‐oriented Pd domains rotated 90° with respect to each other were also detected. © 1996 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.05.C- X-ray diffraction and scattering

Diamondlike properties in a single phase carbon nitride solid

Z. John Zhang, Shoushan Fan, Jinlin Huang, and Charles M. Lieber

Appl. Phys. Lett. 68, 2639 (1996); http://dx.doi.org/10.1063/1.116317 (3 pages) | Cited 36 times

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The intrinsic properties and bonding of single phase carbon nitride thin films of stoichiometry C2N have been studied. C2N exhibits high electrical resistivity and thermal conductivity that are similar to the properties shown by diamondlike carbon (DLC) films. Electron energy loss spectroscopy studies how, however, that the carbon in C2N is sp2‐hybridized rather than sp3‐bonded carbon as in DLC. This carbon bonding in C2N film leads to a high thermal stability that makes C2N distinct from DLC and nitrogen doped DLCs, and thus an attractive candidate for applications. © 1996 American Institute of Physics.
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73.61.Le Other inorganic semiconductors
68.60.Dv Thermal stability; thermal effects

Formation mechanism for ferroelectric domain structures in a LiNbO3 optical superlattice

Ya‐lin Lu, Yan‐qing Lu, Xiang‐fei Cheng, Gui‐peng Luo, Cheng‐cheng Xue, and Nai‐ben Ming

Appl. Phys. Lett. 68, 2642 (1996); http://dx.doi.org/10.1063/1.116267 (3 pages) | Cited 12 times

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Yttrium solute concentration distribution over periodic domains in a LiNbO3 optical superlattice was measured with x‐ray energy dispersive spectrum analysis (EDS). A critical concentration gradient mechanism has been proposed in which it is the concentration gradient which determines the configuration of periodic ferroelectric domains. An islandlike domain in periodic domains has been proved to originate from a solute aggregation during crystal growth. © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.80.Dj Domain structure; hysteresis

Influence of precursor gases on the structure of plasma deposited amorphous hydrogenated carbon–nitrogen films

D. F. Franceschini, F. L. Freire, and S. R. P. Silva

Appl. Phys. Lett. 68, 2645 (1996); http://dx.doi.org/10.1063/1.116268 (3 pages) | Cited 21 times

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The atomic structure of amorphous hydrogenated carbon–nitrogen films was studied by electron energy loss spectroscopy (EELS). The films were deposited onto Si(100) substrates by rf plasma decomposition of CH4–NH3 and CH4–N2 mixtures, with substrates placed on the powered electrode of a diode glow‐discharge system. The sp2 fraction of C and N atoms as a function of the nitrogen content in the films was obtained by EELS analysis. An increase of the carbon sp2 fraction with increasing fraction of NH3 and N2 feed gases was observed. The variation in the atomic structure of the a‐C(N):H thin films is correlated to the internal compressive stress. © 1996 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Chemical surface modification on polytetrafluoroethylene films by vacuum ultraviolet excimer lamp irradiation in ammonia gas atmosphere

J. Heitz, H. Niino, and A. Yabe

Appl. Phys. Lett. 68, 2648 (1996); http://dx.doi.org/10.1063/1.116269 (3 pages) | Cited 18 times

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Irradiation of polytetrafluoroethylene films with vacuum UV light in an ammonia gas atmosphere resulted in a hydrophilic surface, where abstraction of fluorine atoms, and introduction of nitrogen, oxygen, and hydrogen atoms occurred. We used Kr2∗ and Xe2∗ excimer lamps at wavelength of 146 and 172 nm, respectively. The reaction mechanism for chemical surface modification is discussed on the basis of x‐ray photoelectron spectroscopy, secondary ion mass spectroscopy, and attenuated total reflection Fourier transform infrared spectroscopy analyses. © 1996 American Institute of Physics.
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81.65.-b Surface treatments
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

The role of Si3N4 layers in determining the texture of sputter deposited LiNbO3 thin films

S. Tan, T. E. Schlesinger, and M. Migliuolo

Appl. Phys. Lett. 68, 2651 (1996); http://dx.doi.org/10.1063/1.116270 (3 pages) | Cited 16 times

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We report on the role of amorphous silicon nitride layers in determining the crystallographic orientation of lithium niobate sputter deposited on a layered substrate. In a structure consisting of LiNbO3/SiNx/SiO2/Si we show that details of the sputtering conditions of the SiNx, in particular, the nitrogen flow rate determine not only the deposition rate and index of refraction of the SiNx but also the orientation of the LiNbO3 subsequently deposited on it. Conditions that yield entirely c‐axis LiNbO3 are reported and reasons for these observations are discussed. © 1996 American Institute of Physics.
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81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology

High quality InP on Si by conformal growth

O. Parillaud, E. Gil‐Lafon, B. Gérard, P. Etienne, and D. Pribat

Appl. Phys. Lett. 68, 2654 (1996); http://dx.doi.org/10.1063/1.116271 (3 pages) | Cited 15 times

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Conformal growth is a confined epitaxial lateral overgrowth technique previously used to achieve low dislocation density GaAs films on Si. Conformal growth was used here to obtain high quality InP films on silicon, starting from GaAs seeds. Detailed characterization of the InP films (chemical etching of dislocations, photoluminescence at 300 K, cross‐section transmission electron microscopy) proved the high defect filtering power of this technique. Dislocations initially present in the GaAs seeds and dislocations generated at the InP/GaAs interface were blocked and did not propagate through the growing films. Dislocations densities below 5×105 cm−2 have been obtained in submicrometer‐thick conformal InP films on Si. © 1996 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a Thin film structure and morphology

Quasiresonance due to electron–electron interaction in coupled quantum dots

Ryuichi Ugajin

Appl. Phys. Lett. 68, 2657 (1996); http://dx.doi.org/10.1063/1.116272 (3 pages) | Cited 11 times

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Quasiresonant tunneling between states of multiple electrons is caused by electron–electron interaction in coupled quantum dots. The effect of the quasiresonance on optical transition is investigated using the effective mass approximation. The peaks in the optical transition coefficients of two electrons confined in a pair of coupled quantum dots are due to this kind of resonance. © 1996 American Institute of Physics.
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73.40.Gk Tunneling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Charge trapping and device behavior in ferroelectric memories

C. H. Seager, D. C. McIntyre, W. L. Warren, and B. A. Tuttle

Appl. Phys. Lett. 68, 2660 (1996); http://dx.doi.org/10.1063/1.116273 (3 pages) | Cited 20 times

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The electric field emanating from the surface of a poled ferroelectric (FE) can control the conduction properties of an overlying semiconducting (SC) film; this combination of materials can thus serve as a nondestructive readout (NDRO), nonvolatile memory device. We have characterized prototypes of these devices which utilize semiconducting In2O3 deposited on thin film lead zirconate titanate and bulk BaTiO3 FEs. The remanent state SC resistance in thin film FE NDRO devices is often opposite to that predicted from the known direction of FE polarization. In these cases charge injected from the SC film into the FE and trapped near the interface appears to control the electric field at the SC/FE interface. By contrast, the response of SC films on bulk FEs is largely controlled by just the FE remanent polarization. The measured SC resistance values in the ‘‘up’’ and ‘‘down’’ polarization states can be fairly accurately predicted by calculating the accumulation and depletion charge densities from the measured carrier concentrations, mobilities, and FE hysteresis behavior. We also observe a correlation between charge trapping in bulk and thin film of NDRO memory devices and the presence or absence of temperature‐bias–stress‐induced voltage shifts (imprint) of the FE hysteresis curves. We suggest that the presence of near‐interfacial traps in the FE controls both imprint and NDRO memory response. © 1996 American Institute of Physics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.65.-j Piezoelectricity and electromechanical effects

On the initial growth of indium tin oxide on glass

X. W. Sun, H. C. Huang, and H. S. Kwok

Appl. Phys. Lett. 68, 2663 (1996); http://dx.doi.org/10.1063/1.116274 (3 pages) | Cited 40 times

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The initial growth mode of indium tin oxide on glass was studied. An interesting transition from a 3D island growth mode at low temperatures to 2D growth at higher temperature was observed. This transition from the Volmer‐Weber mechanism to the Frank–van der Merwe mechanism occurs at about 150°C. It coincides with the transition from amorphous to polycrystalline growth of the thin films. © 1996 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition

Highly reliable chemical vapor deposited stacked oxynitride gate dielectrics fabricated by in situ rapid thermal multiprocessing

J. Yan, L. K. Han, and D. L. Kwong

Appl. Phys. Lett. 68, 2666 (1996); http://dx.doi.org/10.1063/1.116275 (3 pages) | Cited 3 times

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High‐quality chemical vapor deposited (CVD) stacked oxynitride gate dielectrics have been fabricated by in situ rapid thermal multiprocessing. Bottom thin oxynitrides were formed by rapid thermal processing (RTP) of Si in nitric oxide (NO) or nitrous oxide (N2O) ambient, followed by rapid thermal chemical vapor deposition (RTCVD) of SiO2 films using SiH4 and N2O. The stacked dielectrics were then subjected to in situ rapid thermal annealing in an O2 ambient. Results show that CVD stacked oxynitride gate dielectrics have improved endurance to interface state degradation, higher charge to breakdown values, and significantly reduced defect densities compared to control thermal gate oxide. © 1996 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Low‐frequency noise in 4H–silicon carbide junction field effect transistors

J. W. Palmour, M. E. Levinshtein, S. L. Rumyantsev, and G. S. Simin

Appl. Phys. Lett. 68, 2669 (1996); http://dx.doi.org/10.1063/1.116276 (3 pages) | Cited 7 times

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Low frequency noise in 4H‐silicon carbide junction field effect transistors (JFETs) has been investigated. JFETs with a buried p+n junction gate were manufactured by CREE Research Inc. Very low noise level has been observed in the JFETs. At 300 K the value of Hooge constant α is as small as α∼10−5 and the α value can be decreased by an appropriate annealing to α∼2×10−6. It has been shown that even these extremely low noise values are determined not by the volume noise sources but by the noise at the SiC–SiO2 interface. © 1996 American Institute of Physics.
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85.30.Tv Field effect devices
72.70.+m Noise processes and phenomena

Diffusion of ion implanted boron in preamorphized silicon

K. S. Jones, L. H. Zhang, V. Krishnamoorthy, M. Law, D. S. Simons, P. Chi, L. Rubin, and R. G. Elliman

Appl. Phys. Lett. 68, 2672 (1996); http://dx.doi.org/10.1063/1.116277 (3 pages) | Cited 31 times

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Transient enhanced diffusion of boron in preamorphized and subsequently regrown Si was studied by secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). A comparison of 4 keV, 1× 1014/cm2 boron implants into crystalline and Ge+ preamorphized silicon was undertaken. Upon annealing the B+ implant into crystalline material exhibited the well‐known transient enhanced diffusion (TED). In this case the peak of the boron distribution was relatively immobile and only B in the tail showed TED. In the second set of samples, the surface was first preamorphized by a 180 keV, 1×1015/cm2 Ge+ implant which produced an amorphous layer 2300 Å deep, which then was implanted with boron. After implantation the tail of the B distribution extended to only 700 Å. Upon annealing, TED of the boron in the regrown Si was also observed, but the diffusion profile was very different. In this case the peak showed no clustering, so the entire profile diffused. The time for the TED to decay was around 15 min at 800 °C. TEM results indicate that the (311) defects in the end of range damage finish dissolving between 10 and 60 min at 800 °C. These results indicate that for these Ge preamorphization conditions, not only do the end of range defects not block the flow of interstitials into the regrown silicon, the (311) defects in the end of range damage act as the source of interstitials. In addition, boron does not appear to cluster in regrown silicon. © 1996 American Institute of Physics.
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66.30.J- Diffusion of impurities
61.72.uf Ge and Si

Thickness measurements of thin anodic oxides on GaAs using atomic force microscopy, profilometry, and secondary ion mass spectrometry

P. Schmuki, M. Buchanan, B. F. Mason, G. I. Sproule, and M. J. Graham

Appl. Phys. Lett. 68, 2675 (1996); http://dx.doi.org/10.1063/1.116278 (3 pages) | Cited 1 time

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Techniques to determine the thickness of thin (30–200 Å) anodic oxide films on p‐GaAs (100) are reported. The layers were grown potentiostatically in 0.3 M NH4H2PO4 (pH 4.4) solution. By lithographic techniques, several series of squares were etched into the oxide and the step height was measured using both atomic force microscopy (AFM) and a stylus surface profiler (Dektak). Secondary ion mass spectrometry (SIMS) profiles of samples prior to and after the photolithographic treatment show that neither the thickness nor composition of the layers are affected by the treatment. The thickness values obtained in the investigated range show standard deviations better than ±9 Å (AFM) and ±22 Å (Dektak) and correlate well in a linear relation to SIMS sputter times to the interface. © 1996 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
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