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1 Jan 1996

Volume 68, Issue 1, pp. 1-139

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Valence‐band offset at the Si/GaP (110) interface

M. E. Lazzouni, M. Peressi, and A. Baldereschi

Appl. Phys. Lett. 68, 75 (1996); http://dx.doi.org/10.1063/1.116762 (3 pages) | Cited 1 time

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We present the results of self‐consistent ab initio pseudopotential calculations of the valence‐band offset at the Si/GaP (110) interface. For the abrupt interface we find an offset of 0.55 eV including spin‐orbit splittings, self‐energy corrections, and the effects of atomic relaxation. We also study how much the atomic interdiffusion across the interface can modify the offset and attribute to Si–Ga swaps the discrepancy between the commonly accepted experimental value of 0.80 eV and our results for the abrupt interface. © 1996 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures

W. Z. Shen, S. C. Shen, Y. Chang, W. G. Tang, Y. Lu, and A. Z. Li

Appl. Phys. Lett. 68, 78 (1996); http://dx.doi.org/10.1063/1.116763 (3 pages) | Cited 2 times

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We report on steady‐state photoluminescence spectra from a strained InAs/In0.53Ga0.47As/AlAs single quantum well (SQW) structure grown by molecular beam epitaxy. Strong luminescence in the wavelength of ∼1.9 μm for the well width of 7 ML was obtained. The radiative process in the InAs quantum well is dominated by the excitonic luminescence. Based on a steadystate of the lumines‐ cence intensity allow us to conclude that the photogenerated carriers in the well come from tunneling from the InGaAs layer via the AlAs barrier. © 1996 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Silicon based light emitting gels

M. P. Vinod and K. Vijayamohanan

Appl. Phys. Lett. 68, 81 (1996); http://dx.doi.org/10.1063/1.116765 (3 pages) | Cited 11 times

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Light emitting properties of a silicon‐containing gel formed by the controlled reaction between acetone and tetrachlorosilane is reported here. Although infrared spectroscopic analysis shows that the gel has a siloxane network (1000–1100 cm−1), UV absorption with a maximum of 328 nm suggests that it is not a simple siloxane polymer. A photoluminescence (PL) spectrum of the compound gives a broad peak in the range of 800–950 nm, attributed to the structural features associated with carbonyl conjugated siloxane groups. © 1996 American Institute of Physics.
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78.30.Hv Other nonmetallic inorganics
78.55.Hx Other solid inorganic materials
78.66.Sq Composite materials

Room‐temperature negative differential resistance in AlAs/ErAs/AlAs heterostructures grown on (001)GaAs

M. Tanaka, M. Tsuda, T. Nishinaga, and C. J. Palmstrøm

Appl. Phys. Lett. 68, 84 (1996); http://dx.doi.org/10.1063/1.116766 (3 pages) | Cited 6 times

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We have fabricated resonant tunneling structures having a buried ErAs semimetallic quantum well and AlAs double barriers, on (001)GaAs substrates. In order to suppress the three‐dimensional island growth of GaAs and AlAs on ErAs and to obtain flat interfaces, we adopted a template approach, in which one monolayer of Mn was deposited on ErAs prior to the growth of AlAs, in molecular beam epitaxy. In the current–voltage characteristics at room temperature, negative differential resistance was clearly observed in a significant number of diodes with the ErAs thickness ranging from 2.6 to 5.0 nm. This room‐temperature device operation on (001) substrates is, we believe, an important step towards the realization of semimetal/semiconductor hybrid quantum devices. © 1996 American Institute of Physics.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Hydrostatic pressure dependence of the photoluminescence of Si nanocrystals in SiO2

Hyeonsik M. Cheong, W. Paul, S. P. Withrow, J. G. Zhu, J. D. Budai, C. W. White, and D. M. Hembree

Appl. Phys. Lett. 68, 87 (1996); http://dx.doi.org/10.1063/1.116767 (3 pages) | Cited 18 times

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We have measured the hydrostatic pressure dependence of the photoluminescence (PL) of Si nanocrystals in SiO2 layers at room temperature and at pressures up to 50 kbar. The samples were fabricated by ion implantation and subsequent annealing. For the two samples measured, negative pressure coefficients of −0.4 and −0.6 meV/kbar were obtained. These values are not in good quantitative agreement with an estimate based on the quantum confinement model. Possible implications of this disagreement are discussed. © 1996 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
78.66.Vs Fine-particle systems

Strain‐compensated InAsP/GaInP multiple quantum wells for 1.3 μm waveguide modulators

X. B. Mei, K. K. Loi, H. H. Wieder, W. S. C. Chang, and C. W. Tu

Appl. Phys. Lett. 68, 90 (1996); http://dx.doi.org/10.1063/1.116768 (3 pages) | Cited 19 times

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We show that high‐quality strain‐compensated InAsxP1−x/GayIn1−yP multiple quantum wells (MQWs) can be grown by gas‐source molecular beam epitaxy (GSMBE) on InP substrates. Very sharp satellite peaks in double‐crystal x‐ray diffraction are obtained from a p‐i‐n waveguide structure consisting of 21 periods of 93 Å/135 Å InAs0.4P0.6/Ga0.13In0.87P MQWs. The surface‐normal electroabsorption exhibits a significant quantum‐confined Stark effect (QCSE) near 1.3 μm wavelength with a field‐dependent absorption coefficient change of 6000 cm−1 and a very small zero‐bias residual absorption. Electroabsorption waveguide modulators fabricated using similar material exhibit a large optical saturation threshold in excess of 10 mW incident optical power at 32 meV detuning energy. © 1996 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

High resolution Fowler‐Nordheim field emission maps of thin silicon oxide layers

Todd G. Ruskell, Richard K. Workman, Dong Chen, Dror Sarid, Sarah Dahl, and Stephen Gilbert

Appl. Phys. Lett. 68, 93 (1996); http://dx.doi.org/10.1063/1.116782 (3 pages) | Cited 32 times

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An improved method for characterizing thin oxide films using Fowler‐Nordheim field emission is reported. The method uses a conducting‐tip atomic force microscope with dual feedback systems, one for the topography and a second for the field emission bias voltage. Images of the voltage required to maintain a 10 pA emission current through a 3 nm oxide film thermally grown on p‐type Si(100) demonstrate a spatial resolution of 8 nm. © 1996 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.B- Structure of clean surfaces (and surface reconstruction)

PtIn2 ohmic contacts to n‐GaAs via an In‐Ga exchange mechanism

D. Y. Chen, Y. A. Chang, and D. Swenson

Appl. Phys. Lett. 68, 96 (1996); http://dx.doi.org/10.1063/1.116783 (3 pages) | Cited 8 times

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Using sputter‐deposited PtIn2 films as metallizations, it is demonstrated that the recently identified exchange mechanism may be utilized to form ohmic contacts to n‐GaAs. Specific contact resistances as low as 3.0×10−6 Ω cm2 are obtained upon annealing in the temperature range of 800–850 °C. Contacts processed under optimum conditions show little degradation in electrical properties after 100 h of thermal aging at 400 or 500 °C. Auger depth profiles of as‐deposited and annealed samples are consistent with the hypothesis of an exchange of In and Ga atoms at the contact interface. © 1996 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Long‐wavelength InAsSb photoconductors operated at near room temperatures (200–300 K)

J. D. Kim, D. Wu, J. Wojkowski, J. Piotrowski, J. Xu, and M. Razeghi

Appl. Phys. Lett. 68, 99 (1996); http://dx.doi.org/10.1063/1.116784 (3 pages) | Cited 20 times

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Long‐wavelength InAs1−xSbx photoconductors operated without cryogenic cooling are reported. The devices are based on p‐InAs1−xSbx/p‐InSb heterostructures grown on (100) semi‐insulating GaAs substrates by low pressure metalorganic chemical vapor deposition (LP‐MOCVD). Photoreponse up to 14 μm has been obtained in a sample with x=0.77 at 300 K, which is in good agreement with the measured infrared absorption spectra. The corresponding effective lifetime of ≊0.14 ns at 300 K has been derived from stationary photoconductivity. The Johnson noise limited detectivity at λ=10.6 μm is estimated to be about 3.27×107 cm Hz1/2/W at 300 K. © 1996 American Institute of Physics.
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73.50.Pz Photoconduction and photovoltaic effects
78.66.Fd III-V semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Reduced lateral straggling of implantation induced defects in III/V heterostructures by ion implantation along channeling directions

A. Kieslich, H. Doleschel, F. Kieseling, J. P. Reithmaier, and A. Forchel

Appl. Phys. Lett. 68, 102 (1996); http://dx.doi.org/10.1063/1.116769 (3 pages) | Cited 2 times

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Argon ions at an energy of 50 keV were implanted in patterned GaInAs/GaAs quantum well structures to investigate the lateral broadening of the implantation induced defect profile. In order to study the influence of ion channeling on the lateral spread of the damage distribution, implantations were carried out along channeling axes and along random directions. The degradation of the photoluminescence emission intensity of the laterally damaged quantum well layers was measured as a function of the implantation mask width. The experimental results were modeled by using a simple diffusion calculation, which considers the diffusivity of the electron‐hole pairs beneath the implantation mask. This model allows the evaluation of an effective lateral straggling length for channeling as well as for random implantations. In comparison to randomly implanted samples, a clearly reduced lateral spread of the damage profile could be determined for implantations along the [100]‐ or the [110]‐axis of the crystal. © 1996 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
61.80.Jh Ion radiation effects

Electrical characterization of the β‐FeSi2/Si heterojunction after thermal oxidation

U. Erlesand and M. Östling

Appl. Phys. Lett. 68, 105 (1996); http://dx.doi.org/10.1063/1.116770 (3 pages) | Cited 3 times

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The influence of an oxidant ambient on the electrical transport properties of β‐FeSi2/Si heterostructures has been investigated. Current‐voltage and capacitance‐voltage analyses on diodes formed on p‐type silicon did not reveal any change in the dominant transport mechanism after oxidation, other than an increase of the 0 K hole barrier from 0.42 to 0.46 eV. The transport showed a thermally activated process and was interpreted as thermionic emission of holes from the silicon region to the silicide. However, on n‐type silicon a change from a thermally activated process to a tunneling limited transport was observed after oxidation. A multistep recombination‐tunneling mechanism was suggested with formed defects presumably situated close to the interface or inside the silicide film. It was also observed that dry oxidation was less detrimental to the heterojunction characteristics than oxidation in wet ambient. © 1996 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Evolution of silicon surface morphology during H2 annealing in a rapid thermal chemical vapor deposition system

C. L. Wang, S. Unnikrishnan, B. Y. Kim, D. L. Kwong, and A. F. Tasch

Appl. Phys. Lett. 68, 108 (1996); http://dx.doi.org/10.1063/1.116771 (3 pages) | Cited 5 times

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The surface morphology of Cz Si(100) after H2 bake has been investigated. It is found that at temperatures as low as 950 °C, and bake times as short as 25 s, steps and terraces are formed by the H2 annealing. The evolution of the step and terrace structure can be clearly seen by virtue of temperature differences across the wafer. The steps are two‐atomic layer steps at straight edges, whereas one‐atomic layer steps occur when the edge line is irregular. © 1996 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Md Surface thermodynamics, surface energies

Dislocation formation mechanism in strained InxGa1−xAs islands grown on GaAs(001) substrates

Y. Chen, X. W. Lin, Z. Liliental‐Weber, J. Washburn, J. F. Klem, and J. Y. Tsao

Appl. Phys. Lett. 68, 111 (1996); http://dx.doi.org/10.1063/1.116773 (3 pages) | Cited 29 times

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The formation mechanism of misfit dislocations in lattice‐mismatched InxGa1−xAs epilayers (0.2≤x≤1) grown on GaAs substrates has been investigated experimentally. The results suggest that 1/3〈111〉 Frank partial dislocations are grown‐in at island edges in highly lattice‐mismatched epilayers (x≥0.4). Then after further island growth 90° Shockley partial dislocations are nucleated to remove the stacking faults, reacting with the Frank partials to form complete 90° dislocations. An atomic model is proposed to explain the formation mechanism of the Frank partial dislocation. This model could explain the observed change in the dominant type of dislocation from the 60° at small mismatches to 90° edge dislocations at large lattice mismatches. © 1996 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Scanning tunneling microscopy of Si/SiO2 interface roughness and its dependence on growth conditions

G. S. Shekhawat, Ram P. Gupta, S. S. Shekhawat, D. P. Runthala, P. D. Vyas, P. Srivastava, S. Venkatesh, K. Mamhoud, and K. B. Garg

Appl. Phys. Lett. 68, 114 (1996); http://dx.doi.org/10.1063/1.116774 (3 pages) | Cited 5 times

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The interface between silicon (100) and thermal silicon dioxide grown by wet, dry, and trichloroethylene oxidation has been investigated by scanning tunneling microscopy and scanning tunneling spectroscopy. The scanning tunneling microscopy images of the silicon surface, after removal of oxide, reveal the presence of silicon bumps (protrusions) in samples prepared by wet and dry oxidation while no protrusions are seen at the interface of trichloroethylene oxidized samples. The spectroscopic measurements predict that these are silicon protrusions and are produced by oxide growth conditions. X‐ray photon spectroscopy on samples containing protrusions also supports the above prediction. Thus, our study suggests that roughness of the silicon–silicon dioxide interface depends on oxide growth conditions and a relatively smooth interface is obtained by tricholoroethylene oxidation. © 1996 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
81.65.-b Surface treatments

Electron capture in GaAs quantum wells via electron‐electron and optic phonon scattering

K. Kálna, M. Moško, and F. M. Peeters

Appl. Phys. Lett. 68, 117 (1996); http://dx.doi.org/10.1063/1.116207 (3 pages) | Cited 8 times

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Electron capture times in a quantum well (QW) structure with finite electron density are calculated for electron‐electron (e‐e) and electron‐polar optic phonon (e‐pop) scattering. We find that the capture time oscillates as function of the QW width for both processes with the same period, but with very different amplitudes. For an electron density of 1011 cm−2 the e‐e capture time is 101−103 times larger than the e‐pop capture time except for QW widths near the resonance minima, where it is only 2−3 times larger. With increasing density the e‐e capture time decreases and near the resonance becomes smaller than the e‐pop capture time. Our e‐e capture times are three orders larger than the results of Blom et al. [Appl. Phys. Lett. 62, 1490 (1993)]. The role of the e‐e capture in QW lasers is therefore readdressed. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Electrical transport properties of [001] tilt bicrystal grain boundaries in YBa2Cu3O7

D. G. Steel, J. D. Hettinger, F. Yuan, D. J. Miller, K. E. Gray, J. H. Kang, and J. Talvacchio

Appl. Phys. Lett. 68, 120 (1996); http://dx.doi.org/10.1063/1.116775 (3 pages) | Cited 25 times

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The zero‐field electrical transport properties of 24° [001] tilt bicrystal grain boundaries in YBa2Cu3O7 were found to be in excellent agreement with the Ambegaokar–Halperin model over an extended range of currents and voltages. This model gives a firm basis for characterizing and comparing boundaries, and provides two independent measures of the critical current, which were proportional to (1−T/Tc)2 close to the transition temperature Tc. © 1996 American Institute of Physics.
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74.25.F- Transport properties
74.25.Sv Critical currents
74.72.-h Cuprate superconductors
74.81.Bd Granular, melt-textured, amorphous, and composite superconductors

Ion channeling studies of regrowth kinetics in crystalline metal oxides used with high temperature superconductors

L. Senapati, R. P. Sharma, T. Venkatesan, Zuhua Zhang, and Wei‐Kan Chu

Appl. Phys. Lett. 68, 123 (1996); http://dx.doi.org/10.1063/1.116776 (3 pages) | Cited 3 times

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The near surface regions of the single crystals of LaAlO3 and NdGaO3 are disordered to a depth of 150 nm by oxygen ion implantation. Thermally induced solid state epitaxial regrowth kinetics of these damaged layers are studied using ion channeling. It is seen that the regrowth in LaAlO3 samples starts at a temperature of 450 °C for 1 h in oxygen atmosphere. Most of the disordered region recovers as the annealing temperature is increased to 600 °C. Some end of range damage remains even after annealing at 1100 °C for 1 h. In the case of NdGaO3, the epitaxial regrowth starts at 650 °C. As the annealing temperature is increased to 900 °C, practically all the damaged region recovers. The Arrhenius plots indicate a distinct epitaxial‐regrowth regime with different activation energies for the two cases. The implication of these results on the technology of high temperature superconducting circuit fabrication is discussed. © 1996 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
61.80.Jh Ion radiation effects
74.78.-w Superconducting films and low-dimensional structures
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Resonance oscillations of a permanent magnet levitated above granular superconductors

A. A. Kordyuk and V. V. Nemoshkalenko

Appl. Phys. Lett. 68, 126 (1996); http://dx.doi.org/10.1063/1.116777 (3 pages) | Cited 7 times

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We have studied the interaction of alternating magnetic fields with granular high temperature superconductors (HTSC) with a magnetization distribution in the HTSC volume. The expressions for resonance frequencies of a permanent magnet levitated above a HTSC sample were found for five oscillation modes. An original method for determination of the superconducting grains’ volume fraction is proposed. © 1996 American Institute of Physics.
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74.25.Ha Magnetic properties including vortex structures and related phenomena
74.81.Bd Granular, melt-textured, amorphous, and composite superconductors
84.71.Ba Superconducting magnets; magnetic levitation devices

Highly coercive Sm2Fe15Ga2C2 magnets made by intense ball milling

L. Cao, A. Handstein, W. Grünberger, J. Edelman, L. Schultz, and K.‐H. Müller

Appl. Phys. Lett. 68, 129 (1996); http://dx.doi.org/10.1063/1.116778 (3 pages) | Cited 26 times

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Thermodynamically stable nanocrystalline Sm2Fe15Ga2C2 powders were prepared by intense ball milling of homogenized and coarsely ground ingots, and a subsequent annealing of the powders in an argon atmosphere. Such processing results in magnetically isotropic material with a room‐temperature coercivity μ0JHc of up to 1.2 T. Scanning electron microscopy observations suggest a homogeneous microstructure, and combined with Scherrer formula estimations, an average grain size of <100 nm has been determined. The coercivity can be preserved at high annealing temperatures when the process is performed at an argon pressure of about 800 mbar. The attempt of a hot‐pressing procedure resulted in a magnet with a density of 86% (6.7 g/cm3) of the theoretical density (7.8 g/cm3) and a coercivity of 1.3 T. © 1996 American Institute of Physics.
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75.50.Bb Fe and its alloys
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

Magnetoelastic properties of nickel thin films

J. Betz, E. du Trémolet de Lacheisserie, and L. T. Baczewski

Appl. Phys. Lett. 68, 132 (1996); http://dx.doi.org/10.1063/1.116779 (2 pages) | Cited 22 times

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The deflection of bimorphs consisting of thin films of nickel on silicon substrates has been accurately measured as a function of applied in‐plane magnetic field, using an optical method. Striking differences in the magnetoelastic behavior are observed for these systems compared with bulk nickel, mainly due to the anisotropic behavior of silicon substrates and to large in plane tensile stresses in nickel films, which favor an easy magnetization axis perpendicular to the film plane: Deflections measured with the magnetic field parallel and perpendicular to the length of the bimorph exhibit the same sign, and the ‘‘parallel deflection’’ is enhanced by a factor 1.3. These are the first experiments demonstrating the validity of a formula recently derived for predicting the deflection of magnetostrictive bimorphs. © 1996 American Institute of Physics.
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75.70.-i Magnetic properties of thin films, surfaces, and interfaces
75.80.+q Magnetomechanical effects, magnetostriction

Giant magnetoresistance in fine particle of La0.67Ca0.33MnO3 synthesized at low temperatures

R. D. Sánchez, J. Rivas, C. Vázquez‐Vázquez, A. López‐Quintela, M. T. Causa, M. Tovar, and S. Oseroff

Appl. Phys. Lett. 68, 134 (1996); http://dx.doi.org/10.1063/1.116780 (3 pages) | Cited 158 times

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Using a sol‐gel method we have prepared monodispersive particles of La0.67Ca0.33MnO3 in the range from 20 to 110 nm at temperatures from 540 to 1000 °C. A magnetoresistance above 10% was obtained in a field of 1 kOe for all the particles sizes. These results may be relevant for future applications. © 1996 American Institute of Physics.
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72.15.Gd Galvanomagnetic and other magnetotransport effects
75.50.Tt Fine-particle systems; nanocrystalline materials
75.47.De Giant magnetoresistance

Room‐temperature preparation of crystallized luminescent Sr1−xCaxWO4 solid‐solution films by an electrochemical method

Woo‐Seok Cho, Masatomo Yashima, Masato Kakihana, Akihiko Kudo, Tadayoshi Sakata, and Masahiro Yoshimura

Appl. Phys. Lett. 68, 137 (1996); http://dx.doi.org/10.1063/1.116781 (3 pages) | Cited 18 times

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A complete series of well‐crystallized solid‐solution oxide films, Sr1−XCaXWO4 (0≤X≤1), has been prepared on a tungsten substrate in the electrolytic solution containing Sr2+ and Ca2+ ions by an electrochemical method at room temperature (25 °C). The composition of solid‐solution oxide films could easily be controlled by the concentrations of Sr and Ca species in the starting solutions. The films showed only single blue emission at liquid nitrogen temperature (−196 °C), strongly suggesting that they consisted of well‐crystallized defect‐free crystals. © 1996 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.10.Dn Growth from solutions
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