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8 Jan 1996

Volume 68, Issue 2, pp. 141-277

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Near‐field optical data storage

B. D. Terris, H. J. Mamin, and D. Rugar

Appl. Phys. Lett. 68, 141 (1996); http://dx.doi.org/10.1063/1.116127 (3 pages) | Cited 86 times

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A recently developed near‐field optical technique, the solid immersion lens (SIL), is utilized in a realistic demonstration of near‐field optical data storage. Using 830 nm light, a 360 nm optical spot size is obtained at the exit surface of the SIL and is transferred across a small air gap to the surface of a spinning magneto‐optical disk. Reading and writing of data are achieved at a density of 3.8× 108 bits/cm2 with a data rate of 3.3×106 bits/s. The subwavelength gap between the lens and the disk is maintained at a media velocity of 1.25 m/s by incorporating the lens into an air‐bearing slider. © 1996 American Institute of Physics.
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42.79.Vb Optical storage systems, optical disks

Electric field response of second order optical nonlinearity in dye doped poled polymer

Takashi Sugihara, Hiroshi Haga, and Sadahiko Yamamoto

Appl. Phys. Lett. 68, 144 (1996); http://dx.doi.org/10.1063/1.116128 (3 pages) | Cited 6 times

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The optical nonlinearity induced by electrical poling decays gradually in poled polymers. This suggests that the molecular alignment can be reoriented in the polymer matrix at room temperature by the external electric field. We measured the frequency responses and the temperature characteristics of second‐harmonic generation (SHG) in a dye doped polymer in order to clarify the electric field dependence of the nonlinearity. The experimental results show that there is a slow response of the SHG coefficient variation due to the reorientation of nonlinear molecules and another fast response. This characteristic can be applied to develop a new type of nonlinear optical devices by dynamically controlling the nonlinearity of the material by the external electric field. © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Jk Polymers and organics

White light emission from a polymer blend light emitting diode

Magnus Granström and Olle Inganäs

Appl. Phys. Lett. 68, 147 (1996); http://dx.doi.org/10.1063/1.116129 (3 pages) | Cited 204 times

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A new type of polymer light emitting diodes that emit white light is reported. In these diodes, several electroluminescent substituted polythiophenes have been combined to give the necessary components of the visible spectrum. These emitting polymers are then mixed with an insulating polymer to diminish the energy transfer from high‐band‐gap polymers to low‐band‐gap polymers. The resulting emission at 20 V is shown to be close to the equienergy white point as defined by the CIE (Commission Internationale de l’Eclairage). © 1996 American Institute of Physics.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices

Coherent detection of freely propagating terahertz radiation by electro‐optic sampling

Ajay Nahata, David H. Auston, Tony F. Heinz, and Chengjiu Wu

Appl. Phys. Lett. 68, 150 (1996); http://dx.doi.org/10.1063/1.116130 (3 pages) | Cited 58 times

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We report the demonstration of an electro‐optic sampling technique that allows for the detection of freely propagating terahertz radiation. Coherent sampling is performed in a poled polymer device that is physically separated from the emitter. The poling electrodes in the sampling element are found to have an integrating effect on the incident terahertz field. The shot noise limited minimum detectable field in the polymer is 100 (mV/cm)/√Hz. We discuss methods by which the sensitivity may be significantly enhanced. © 1996 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Ultrafast 1.55 μm all‐optical switching using low‐temperature‐grown multiple quantum wells

R. Takahashi, Y. Kawamura, and H. Iwamura

Appl. Phys. Lett. 68, 153 (1996); http://dx.doi.org/10.1063/1.116131 (3 pages) | Cited 60 times

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Low‐temperature grown surface‐reflection all‐optical switching has been demonstrated with ultrafast photoresponse (1.5 ps), low switching energy (2 pJ), high‐contrast (13 dB), polarization independence, and wide operation wavelength range in the 1.55 μm band using low‐temperature‐grown Be‐doped strained InGaAs/InAlAs multiple quantum wells. The combination of low‐temperature growth and Be‐doping contributes to the ultrafast photoresponse. Additionally, the introduction of compressive strain and a mirror with 1% reflectivity greatly enhances optical nonlinearities. © 1996 American Institute of Physics.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
78.66.Fd III-V semiconductors

Emission dynamics of In0.2Ga0.8As/GaAs λ and 2λ microcavity lasers

P. Michler, M. Hilpert, W. W. Rühle, H. D. Wolf, D. Bernklau, and H. Riechert

Appl. Phys. Lett. 68, 156 (1996); http://dx.doi.org/10.1063/1.116132 (3 pages) | Cited 14 times

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We study the emission dynamics of two In0.2Ga0.8As/GaAs microcavity lasers after femtosecond optical excitation at 20 K. The pulse widths and the peak delays of λ and a 2λ cavity are compared. Pulses as short as 3.3 ps (9.5 ps) and peak delays as short as 8.2 ps (16.5 ps) are obtained with the 2λ cavity (λ cavity). The pulse widths and peak delays are well described by a model based on a rate equation analysis for carrier and photon densities; in particular, the better high speed characteristics of the 2λ cavity compared to the λ cavity are well reproduced. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Diffraction of surface acoustic waves on the zigzag domain wall in a Gd2(MoO4)3 crystal

A. N. Alexeyev and D. V. Roshchupkin

Appl. Phys. Lett. 68, 159 (1996); http://dx.doi.org/10.1063/1.116133 (2 pages) | Cited 10 times

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This letter reports a scanning electron microscopy investigation of surface acoustic wave diffraction on the zigzag domain wall in a Gd2(MoO4)3 crystal. The zigzag domain wall with ∼80 μm period was formed in a Gd2(MoO4)3 crystal by applying the external mechanical stress. It is shown that the surface acoustic wave diffracts on the zigzag domain wall in a ferroelastic Gd2(MoO4)3 crystal. © 1996 American Institute of Physics.
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77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
77.80.-e Ferroelectricity and antiferroelectricity
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials

Self‐focusing Rayleigh wave using a time reversal mirror

R. K. Ing, M. Fink, and O. Casula

Appl. Phys. Lett. 68, 161 (1996); http://dx.doi.org/10.1063/1.116134 (3 pages) | Cited 9 times

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Detection of surface and subsurface flaws is achieved using the time reversal process leading to self‐focusing Rayleigh waves. The generation of surface waves is accomplished with an array of transducers coupled to the specimen with a Plexiglas wedge. The advantages of this technique are demonstrated with the detection of surface and subsurface holes of subwavelength dimensions. An optical interferometer is used to control the surface acoustic field obtained with such a time reversal process. © 1996 American Institute of Physics.
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43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
43.58.+z Acoustical measurements and instrumentation
62.20.M- Structural failure of materials

Ultrasound transducer with low synthetic quality factor

Antonino S. Fiorillo

Appl. Phys. Lett. 68, 164 (1996); http://dx.doi.org/10.1063/1.116447 (3 pages)

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An ultrasound transducer with low synthetic quality factor, for in‐air applications, is presented. It is realized by curving a thin sheet of polyvinylidenefluoride and by assembling the so shaped piezo‐polymer film onto a mobile support. The resonance frequency, which is inversely proportional to the bending radius, can be easily varied on a range of some tens of kHz, 30–65 kHz, by mechanically controlling the opening arc angle of the curved film. An ultrasound transducer with both controlled resonance and controlled axial resolution is obtained. The combination of the different resonance frequencies, related to different opening angles, leads to a synthetic broad‐band transducer with unity quality factor Q. © 1996 American Institute of Physics.
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43.38.-p Transduction; acoustical devices for the generation and reproduction of sound

Space charge fields in photorefractive crystals in the presence of direct current and alternating current fields: A new resonance

V. A. Kalinin and L. Solymar

Appl. Phys. Lett. 68, 167 (1996); http://dx.doi.org/10.1063/1.116448 (3 pages) | Cited 5 times

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It is shown theoretically that the space charge field generated by two‐wave mixing in a photorefractive crystal may have a resonant response when a dc field and a sinusoidal ac field are simultaneously applied. Resonance occurs when the frequency of the ac field is equal to the eigenfrequency of the space charge wave determined by the dc voltage. Analytical expressions are derived for the magnitude of the space charge wave and the optimum ratio of the ac to dc field is determined. The enhancement of the space charge field is shown to be considerably higher than that obtained by a nonresonant method utilizing a sinusoidal ac field alone. Under optimum conditions the maximum space charge field available is equal to mEq/2√2, where m is the modulation of the interference pattern and Eq is the saturation field. © 1996 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

High‐modulation‐depth and short‐cavity‐length silicon Fabry–Perot modulator with two grating Bragg reflectors

Mark Y. Liu and Stephen Y. Chou

Appl. Phys. Lett. 68, 170 (1996); http://dx.doi.org/10.1063/1.116449 (3 pages) | Cited 17 times

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We propose a silicon Fabry–Perot planar waveguide modulator structure consisting of two Bragg reflectors to form the cavity. The Bragg reflectors are nanoscale trenches in the waveguide fabricated using electron beam lithography and reactive ion etching. Compared to conventional waveguide modulator designs, large modulation depth can be achieved with much smaller modulator length using high‐finesse Fabry–Perot cavity, leading to much less loss and higher speed. This modulator design can also be utilized as an externally tunable spectral filter. © 1996 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators

New method of magnetic field and current generation outside laser plasma

A. V. Kabashin and P. I. Nikitin

Appl. Phys. Lett. 68, 173 (1996); http://dx.doi.org/10.1063/1.116450 (3 pages) | Cited 4 times

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A new mechanism of laser plasma generation of current along an irradiated conductive target, and a considerable (more than 1000 times) enhancement of magnetic field outside the plasma has been found. This mechanism is realized in experimental configurations with spatial asymmetries of target dimension scale. Such asymmetries with the largest possible scale was found to be the main factor that determines electromagnetic phenomena detected by external probes outside the laser plasma. © 1996 American Institute of Physics.
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52.25.-b Plasma properties
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Epitaxially oriented growth of diamond on silicon by hot filament chemical vapor deposition

Qijin Chen, Li‐Xin Wang, Ze Zhang, Jie Yang, and Zhangda Lin

Appl. Phys. Lett. 68, 176 (1996); http://dx.doi.org/10.1063/1.116451 (3 pages) | Cited 23 times

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Expitaxially oriented growth of diamond film on Si(001) was achieved using hot filament chemical vapor deposition. The epitaxial relationship between the film and the substrate was confirmed by the observation through scanning electron microscopy and high‐resolution transmission electron microscopy (HRTEM) as follows: Dia(001)//Si(001) and Dia〈110〉//Si〈110〉 with a misorientation angle of 9° between Dia(001) and Si(001). This reports the HRTEM observation of the largest area of the diamond/Si interface (larger than 880 Å). It demonstrates that the intermediate β‐SiC layer is unnecessary for achieving diamond epitaxy on Si. Discussion reveals that the value of the misorientation angle between Dia(001) and Si(001) is not unique and should be controlled to deposit single‐crystal diamond films on Si. © 1996 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Plasma‐deposited silylation resist for 193 nm lithography

Mark W. Horn, Mordechai Rothschild, Brian E. Maxwell, Russell B. Goodman, Roderick R. Kunz, and Lynn M. Eriksen

Appl. Phys. Lett. 68, 179 (1996); http://dx.doi.org/10.1063/1.116452 (3 pages) | Cited 4 times

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Plasma‐deposited carbon‐based polymer films are examined for use as an all‐dry positive‐tone photoresist for 193 nm lithography. These films are designed to crosslink upon exposure to 193 nm radiation, enabling selective silicon uptake via reaction of silylamine gas with hydroxyl in the film. After oxygen plasma pattern transfer, features with resolution below 0.50 μm have been obtained with a 0.35 numerical aperture projection system. © 1996 American Institute of Physics.
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78.66.Qn Polymers; organic compounds
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Monoclinic phase of boron nitride appearing during the hexagonal cubic phase transition at high pressure and high temperature

Shigeo Horiuchi, Lian‐Long He, Mitsuko Onoda, and Minoru Akaishi

Appl. Phys. Lett. 68, 182 (1996); http://dx.doi.org/10.1063/1.116453 (3 pages) | Cited 14 times

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Fine structures appearing on the phase transition from h (hexagonal) to c (cubic) boron nitride under high pressure (7.7 GPa) and high temperature (1800–2150 °C) are examined by high‐resolution transmission electron microscopy. A prominent contraction of the interplanar spacing between sp2 sheets from 3.33 to 3.10 Å in so‐called ‘‘compressed h‐BN’’ is attributable to a monoclinic lattice distortion of the residual h‐BN, which originates from the difference in the compressibility as well as the thermal expansion between adjoining h‐ and c‐BN grains. The parameters of the monoclinic unit cell are am=4.33, bm=2.50, cm=3.1–3.3 Å, and β=92–95°. Thin plates of h‐BN are often folded and the folding also causes the monoclinic structure. The sheet sequence of r (rhombohedral)‐BN locally appears when the strong volume shrinkage occurs due to the formation of a c‐BN grain. Nanoscale twins appear in resulting c‐BN grains, as long as they are small, and w (wurzite)‐BN is sometimes included in them. © 1996 American Institute of Physics.
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61.50.Ks Crystallographic aspects of phase transformations; pressure effects
64.70.K- Solid-solid transitions

The director structure in smectic C‐filled cells with strong surface anchoring

D. C. Ulrich and S. J. Elston

Appl. Phys. Lett. 68, 185 (1996); http://dx.doi.org/10.1063/1.116454 (3 pages) | Cited 2 times

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We determine the structures present in smectic C‐filled liquid crystal cells under the assumption of strong surface anchoring conditions. This is more realistic than commonly used assumptions and allows the prediction of the near surface alignment structure in such cells. The director orientation structure as a function of surface pretilt is discussed and the energies of the states that exist presented. © 1996 American Institute of Physics.
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61.30.-v Liquid crystals

Nanometer scale conductance change in a Langmuir‐Blodgett film with the atomic force microscope

Koji Yano, Masafumi Kyogaku, Ryo Kuroda, Yasuhiro Shimada, Shunichi Shido, Hiroshi Matsuda, Kiyoshi Takimoto, Otto Albrecht, Ken Eguchi, and Takashi Nakagiri

Appl. Phys. Lett. 68, 188 (1996); http://dx.doi.org/10.1063/1.116455 (3 pages) | Cited 24 times

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A nanometer scale metal/Langmuir‐Blodgett (LB) film/metal structure is realized with an atomic force microscope combined with scanning tunneling microscope (AFM/STM). Even in this nanometer scale configuration, increase in conductance can be induced at any point in the LB film by application of a voltage pulse. The AFM/STM observation shows little surface modification has occurred by the voltage application, which shows that the conductance of the LB film changes without pit formation in the LB film or metal cluster deposition from the tip of the probe. © 1996 American Institute of Physics.
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73.40.Rw Metal-insulator-metal structures
73.61.Ph Polymers; organic compounds
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Si/Ge films on laterally structured surfaces: An x‐ray study of conformal roughness

M. Tolan, G. Vacca, S. K. Sinha, Z. Li, M. H. Rafailovich, J. Sokolov, H. Lorenz, and J. P. Kotthaus

Appl. Phys. Lett. 68, 191 (1996); http://dx.doi.org/10.1063/1.116456 (3 pages) | Cited 4 times

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X‐ray diffraction measurements in the region of small incidence and exit angles on thin amorphous silicon/germanium films on laterally structured surfaces are performed. From fits of the data we obtain directly how the Fourier components of the substrates propagate through the evaporated films without being influenced by the intrinsic statistical roughness of the interfaces. The results show that a replication factor extracted from a given model can be quantitatively tested with our measurements. © 1996 American Institute of Physics.
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61.05.C- X-ray diffraction and scattering
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Optoelectronic properties of hydrogenated amorphous silicon films grown using a modified pulsed plasma discharge

C. Mukherjee, C. Anandan, Tanay Seth, P. N. Dixit, and R. Bhattacharyya

Appl. Phys. Lett. 68, 194 (1996); http://dx.doi.org/10.1063/1.116457 (3 pages) | Cited 15 times

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Hydrogenated amorphous silicon (a‐Si:H) films were deposited by a modified pulsed plasma decomposition of silane and disilane in which a nonzero low power level was maintained throughout the discharge. Deposition rate (rd), optical band gap (Eg), dark and photoconductivity (σD and σph), and photosensitivity (σph/σD) were investigated as a function of pulse parameters. By combining dwell time (τ) and the high power level (HPL) it has been shown that Eg can be tailored over a fairly wide range. Similarly, σD and σph/σD have been shown to depend, in addition to HPL, on τ as well, thereby proving the possibility of using τ as an additional process parameter. High band‐gap a‐Si:H material of quality (σph=4.4×10−6 Ω−1 cm−1, σph/σD≊105) comparable to that of device quality a‐Si:C:H has been deposited by this technique. © 1996 American Institute of Physics.
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73.50.Pz Photoconduction and photovoltaic effects
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Surface adhesion reduction in silicon microstructures using femtosecond laser pulses

N. C. Tien, S. Jeong, L. M. Phinney, K. Fushinobu, and J. Bokor

Appl. Phys. Lett. 68, 197 (1996); http://dx.doi.org/10.1063/1.116458 (3 pages) | Cited 14 times

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A reduction of the adhesion between polysilicon surface‐micromachined structures and its silicon substrate using ultrashort pulse laser irradiation has been demonstrated. Polysilicon cantilevers, which adhered to the silicon substrate after final rinse and dry, were freed after irradiation by a 800 nm wavelength laser with pulse duration of 150 fs (full width at half‐maximum) and fluences up to 40 mJ/cm2. Increasing the pulse widths to 2.7 ps resulted in significantly fewer freed cantilevers indicating that the process depends heavily on the presence of high‐temperature carriers in the silicon. Adhesion reduction has been observed from exposure to a single pulse which results in minimal lattice temperature increase. © 1996 American Institute of Physics.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Morphology and photoluminescence improvements from high‐temperature rapid thermal annealing of GaN

J. C. Zolper, M. Hagerott Crawford, A. J. Howard, J. Ramer, and S. D. Hersee

Appl. Phys. Lett. 68, 200 (1996); http://dx.doi.org/10.1063/1.116459 (3 pages) | Cited 47 times

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Rapid thermal annealing of GaN in an Ar or N2 ambient up to 1100 °C is shown to improve surface morphology and photoluminescence intensity. For both ambients the average rms surface roughness as determined by atomic force microscopy decreases from ∼4 nm on the as‐grown material to ∼1 nm after a 1100 °C anneal. The band‐edge luminescence intensity was increased by a factor of 4 after a 1100 °C anneal in a N2 ambient and a factor of 2 for annealing at 1100 °C in an Ar ambient as compared to as‐grown material. The 1100 °C anneal improves the ratio of band edge to deep‐level luminescence and also reduces the electron concentration and mobility. The reduction in mobility can be explained in terms of a two‐band conduction mechanism where defect band conduction dominates at the lower carrier densities or an increase in the free‐carrier compensation ratio. © 1996 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
71.55.Eq III-V semiconductors
78.55.Cr III-V semiconductors

New near‐infrared defect luminescence in GaN doped with vanadium by ion implantation

B. Kaufmann, A. Dörnen, V. Härle, H. Bolay, F. Scholz, and G. Pensl

Appl. Phys. Lett. 68, 203 (1996); http://dx.doi.org/10.1063/1.116460 (2 pages) | Cited 6 times

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We report a new photoluminescence (PL) spectrum of wurzite‐type GaN intentionally doped with vanadium by ion implantation. A group of several broad intense near‐infrared PL lines is observed at 820 meV. The whole PL spectrum can be observed up to room temperature. The samples were grown by low‐pressure metalorganic vapor phase epitaxy on sapphire substrate. After ion implantation the samples were annealed under growth conditions at 920 °C. © 1996 American Institute of Physics.
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71.55.Eq III-V semiconductors
78.55.Cr III-V semiconductors

Exciton localization and temperature stability in self‐organized InAs quantum dots

D. I. Lubyshev, P. P. González‐Borrero, E. Marega, E. Petitprez, N. La Scala, and P. Basmaji

Appl. Phys. Lett. 68, 205 (1996); http://dx.doi.org/10.1063/1.116461 (3 pages) | Cited 134 times

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We investigated the temperature effect on exciton localization in self‐organized InAs quantum dots. Quenching energy for excitons in reference quantum well and quantum dots was found to be 2 and 7 meV, respectively. Thermoactivation energy of electron‐hole emission through a GaAs barrier in the quantum dots was measured as 46 meV. We observed an unusual decrease of photoluminescence peak full width at half maximum with temperature, suggesting suppression of nonpredominant size quantum dot emissions due to carrier tunneling between nearby dots. © 1996 American Institute of Physics.
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71.35.-y Excitons and related phenomena
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

2×106 cm2/V s electron mobility by metalorganic chemical vapor deposition with tertiarybutylarsine

H. C. Chui, B. E. Hammons, N. E. Harff, J. A. Simmons, and M. E. Sherwin

Appl. Phys. Lett. 68, 208 (1996); http://dx.doi.org/10.1063/1.116462 (3 pages) | Cited 5 times

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We demonstrate the metalorganic chemical vapor deposition (MOCVD) growth of two‐dimensional electron gases (2DEGs) with electron mobilities up to 2.0×106 cm2/V s at 0.3 K. These are the highest mobilities to date for MOCVD materials, and were achieved using a safer replacement precursor for arsine, tertiarybutylarsine (TBA). For structures grown using arsine, we obtained a maximum mobility of 1.0×106 cm2/V s, which although comparable to the best by MOCVD to date, is half that obtained using TBA. Our studies on thick GaAs and AlGaAs layers indicate that the use of TBA in place of arsine reduces both the carbon and donor impurity concentrations. Thus, TBA is not only a safe alternative to arsine, but also produces significantly purer films. © 1996 American Institute of Physics.
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73.50.Dn Low-field transport and mobility; piezoresistance
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Photoconductivity spectra for boron acceptors in Si1−xGex alloys

X. H. Shi, P. L. Liu, Z. H. Chen, S. C. Shen, and J. Schilz

Appl. Phys. Lett. 68, 211 (1996); http://dx.doi.org/10.1063/1.116463 (3 pages) | Cited 4 times

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Far infrared photoconductivity spectra of B‐doped Si1−xGex grown by Czochralski technique have been investigated in the temperature region from 4.2 to 34 K as well as under high magnetic fields. The photo ionization transition from the ground state of boron acceptor to P3/2 valence band and that related to spin‐orbit splitting valence band (P1/2) are observed. The experimental results show that the ionization energy of boron acceptor in Si1−xGex decreases fast and linearly with the increase of Ge concentration for lower Ge composition, and 4% Ge contents make a decrease of 14 meV for the ionization energy of boron in Si0.96Ge0.04. The photoconductivity spectra hardly change with magnetic field up to 11 T. © 1996 American Institute of Physics.
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71.55.Ht Other nonmetals
72.40.+w Photoconduction and photovoltaic effects
78.30.Hv Other nonmetallic inorganics
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