Uniform, single‐crystal CoSi2 layers have been grown on Si by the technique of oxide mediated epitaxy (OME). Deposition of a thin layer of cobalt (1–3 nm) onto surfaces covered with a thin silicon oxide layer and annealing at 500–700 °C led to the growth of epitaxial, essentially uniform, CoSi2 layers on the (100), (110), and (111) surfaces of Si. The nucleation and growth of silicide apparently occurred subsurface, leaving the silicon oxide layer largely on the surface of the silicide after the growth. On all surfaces, thicker (10–30 nm), excellent quality, CoSi2 single‐crystal thin films have been grown by repeated growth sequences. Experimental results are presented along with a discussion on the possible roles played by the thin oxide layer in promoting the epitaxial growth of silicide. © 1996 American Institute of Physics.