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17 Jun 1996

Volume 68, Issue 25, pp. 3525-3661

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Theoretical and experimental study of silicon‐based angular filters

M. M. Sigalas, J. S. McCalmont, K.‐M. Ho, and G. Tuttle

Appl. Phys. Lett. 68, 3525 (1996); http://dx.doi.org/10.1063/1.116518 (3 pages) | Cited 6 times

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We study periodic structures constructed by low resistivity Si wafers which allow only the transmission of electromagnetic waves incident at a certain angle. We call those materials angular filters. The angular width of the transmission peak can be controlled by changing the thickness of the structure and/or by changing the resistivity of Si wafers. The basic idea behind the unusual properties of those materials lies on the Borrman effect or anomalous transmission of x rays through the crystals. Measured responses are in good agreement with theoretical simulations. Although the present structure was designed and built to work at around 100 GHz, similar structures can be designed for any other frequency region. © 1996 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers
78.66.-w Optical properties of specific thin films

Optical matrix for clock distribution and synchronous operation in two‐dimensional array devices

K. S. Lee and C. Shu

Appl. Phys. Lett. 68, 3528 (1996); http://dx.doi.org/10.1063/1.116519 (3 pages) | Cited 2 times

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A scheme to generate an optical matrix from a mode‐locked Nd:YAG laser has been theoretically explored and experimentally demonstrated. The matrix consists of highly synchronized and sequentially delayed optical pulses suitable for use with two‐dimensional array optoelectronic devices and clock distribution system. The output pulses have the same state of polarization and no timing jitter is produced among the elements. Encoded outputs have been generated from the matrix using a set of photomasks. This technique can be applied to high‐speed optical parallel processing. © 1996 American Institute of Physics.
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42.82.Bq Design and performance testing of integrated-optical systems

Multipurpose sensor tips for scanning near‐field microscopy

C. Mihalcea, W. Scholz, S. Werner, S. Münster, E. Oesterschulze, and R. Kassing

Appl. Phys. Lett. 68, 3531 (1996); http://dx.doi.org/10.1063/1.116520 (3 pages) | Cited 47 times

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The reproducible micromachining of hollow metal tips on Si cantilevers and their applicability to scanning probe microscopy techniques are described. Provided with apertures below 130 nm and hollow pyramidal tips proved to be highly suited probes for scanning near‐field optical microscopy (SNOM). First results of combined SFM/SNOM measurements together with scanning electron microscopy (SEM) photographs of the new sensors are presented. The SNOM images show a resolution of about 100 nm demonstrating the usefulness of these probes. © 1996 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
07.79.Fc Near-field scanning optical microscopes

All‐optical synchronization of self‐pulsating laser diodes

A. Egan, M. Harley‐Stead, P. Rees, S. Lynch, P. McEvoy, J. O’Gorman, and J. Hegarty

Appl. Phys. Lett. 68, 3534 (1996); http://dx.doi.org/10.1063/1.116521 (3 pages) | Cited 6 times

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We examine the behavior of self‐pulsating laser diodes when injected with periodic optical signals. We experimentally and theoretically investigate the phase difference between the injected optical signal and the synchronized self‐pulsating laser diode emission. We explore the phase difference dependence on detuning between the laser free‐running self‐pulsation frequency and the applied signal frequency, and on the injected signal power. The determined sensitive dependence of the phase difference on these factors has important consequences when self‐pulsating lasers are used as optical signal processing elements in all‐optical communication networks, where such sensitivity may lead to timing problems. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

A four channel polarization and wavelength separation element using substrate‐mode stacked holograms

Jen‐Tsorng Chang, Der‐Chin Su, and Yang‐Tung Huang

Appl. Phys. Lett. 68, 3537 (1996); http://dx.doi.org/10.1063/1.116522 (3 pages) | Cited 3 times

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A four channel polarization and wavelength separation element using substrate‐mode stacked holograms is proposed based on the diffraction efficiency characteristics for polarization and the wavelength selectivity of a transmission‐type phase volume grating. We fabricated a sample device and measured its polarization selectivity, output spectrum, and insertion loss of each channel to demonstrate its performance. © 1996 American Institute of Physics.
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42.82.Ds Interconnects, including holographic interconnects
42.40.Eq Holographic optical elements; holographic gratings
42.40.Pa Volume holograms

Fivefold femtosecond pulse compression by sum frequency generation

M. Nisoli, S. De Silvestri, G. Valiulis, and A. Varanavicius

Appl. Phys. Lett. 68, 3540 (1996); http://dx.doi.org/10.1063/1.116523 (3 pages) | Cited 9 times

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Pulse compression by sum frequency generation is demonstrated in femtosecond time domain with a type II phase matching BBO crystal. By frequency mixing in BBO crystal infrared signal and idler pulses of 160 fs duration generated by an optical parametric amplifier, sum frequency pulses as short as 34 fs were obtained. Experiments and computer simulations demonstrate the potential of this technique to produce ultrashort pulses with high conversion efficiency. © 1996 American Institute of Physics.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Stable operation of self‐sustained pulsation in 650‐nm‐band AlGaInP visible lasers with highly doped saturable absorbing layer

Isao Kidoguchi, Hideto Adachi, Toshiya Fukuhisa, Masaya Mannoh, and Akira Takamori

Appl. Phys. Lett. 68, 3543 (1996); http://dx.doi.org/10.1063/1.116524 (3 pages) | Cited 8 times

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Self‐sustained pulsating 650‐nm‐band AlGaInP visible lasers were fabricated by adopting a new structure, which has a highly doped saturable absorbing (HDSA) layer. Since the doping level and the thickness of the HDSA layer could be controlled accurately by using metalorganic vapor phase epitaxy growth technique, a stable operation of self‐sustained pulsation up to 60 °C was obtained. The lasers operated over 1350 h under the average output power of 5 mW at 60 °C. The relative intensity noise values were below −136 dB/Hz in the temperature ranging from 20–60 °C and remained unchanged after life test. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Ultrafast magneto‐optic sampling of picosecond current pulses

A. Y. Elezzabi and M. R. Freeman

Appl. Phys. Lett. 68, 3546 (1996); http://dx.doi.org/10.1063/1.116632 (3 pages) | Cited 4 times

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We report the demonstration of a magneto‐optic sampling technique that allows for the detection of picosecond electrical pulses propagating down a microstrip transmission line. A unique feature of the method is that it directly measures the current in ultrashort electrical pulses. The technique is based on time‐resolved detection of the magneto‐optic Faraday effect in a Bi‐substituted yttrium‐iron‐garnet (Bi‐YIG) film. The detailed magnetic response is found to be in excellent agreement with the Bloch‐Bloembergen equations. The bandwidth of the sampling system has been demonstrated to scale with the ferromagnetic resonance frequency up to 82.3 GHz, with a potential for increase towards 1 THz. © 1996 American Institute of Physics.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.-e Optical elements, devices, and systems
78.20.Ls Magneto-optical effects
78.47.-p Spectroscopy of solid state dynamics

Upconversion dye‐doped polymer fiber laser

Guang S. He, Jayant D. Bhawalkar, Chan F. Zhao, Chi K. Park, and Paras N. Prasad

Appl. Phys. Lett. 68, 3549 (1996); http://dx.doi.org/10.1063/1.116633 (3 pages) | Cited 23 times

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Two‐photon pumped frequency upconversion cavity lasing at ∼610 nm is accomplished in a dye‐doped polymer fiber system, pumped with ∼12 ns and 1.06 μm IR laser pulses. The dopant is a novel dye, trans‐4‐[p‐(N‐hydroxyethyl‐N‐methylamino)styryl]‐N‐methylpyridinium iodide, abbreviated as ASPI, which possesses a greater two‐photon absorption cross section and stronger upconversion fluorescence emission compared to common commercial dyes (such as rhodamine 6G). Using a Q‐switched Nd:YAG pulse laser as the pump source, cavity lasing could be achieved in a 3‐cm‐long ASPI‐doped poly(2‐hydroxyethyl methacrylate) solid fiber of 100 μm diameter. The experimental results of spectral, temporal, spatial, and input–output characteristics of the cavity lasing are presented. The slope efficiency of upconversion lasing was 0.9%. © 1996 American Institute of Physics.
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42.55.Mv Dye lasers
42.55.Wd Fiber lasers
42.60.By Design of specific laser systems

Optical quadratic nonlinearity in multilayer corona‐poled glass films

S. Horinouchi, H. Imai, G. J. Zhang, K. Mito, and K. Sasaki

Appl. Phys. Lett. 68, 3552 (1996); http://dx.doi.org/10.1063/1.116634 (3 pages) | Cited 11 times

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Second order nonlinearity via corona poling at room temperature in a Corning 7059 glass film on a Pyrex glass substrate was studied. It was clearly pointed out that the origin of the induced nonlinearity in this waveguide was located at the interface region between a top layer glass film and a glass substrate. This region is formed to be a depletion layer in the consequence of a drift of positive ions towards a negative electrode during corona poling. X‐ray photoelectron spectroscopy measurement on the corona‐poled Pyrex glass substrate gave the evidence that the main mobile ions were sodium ions. © 1996 American Institute of Physics.
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42.70.Ce Glasses, quartz
42.65.An Optical susceptibility, hyperpolarizability

Low‐frequency optical response in epitaxial thin films of La0.67Ca0.33MnO3 exhibiting colossal magnetoresistance

M. Rajeswari, C. H. Chen, A. Goyal, C. Kwon, M. C. Robson, R. Ramesh, T. Venkatesan, and S. Lakeou

Appl. Phys. Lett. 68, 3555 (1996); http://dx.doi.org/10.1063/1.116635 (3 pages) | Cited 45 times

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We report measurements of the low‐frequency optical response in epitaxial thin films of La0.67Ca0.33MnO3 in the temperature range covering both the ferromagnetic metallic state and the paramagnetic insulating state. We observe a bolometric optical response in fully oxygenated films of the above composition as well as in oxygen deficient films. In both types of samples, the optical response is thermal in nature as indicated by its proportionality with the temperature derivative of the resistance dR/dT. © 1996 American Institute of Physics.
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78.66.-w Optical properties of specific thin films
75.47.De Giant magnetoresistance

The nucleation of highly oriented diamond on silicon via an alternating current substrate bias

S. D. Wolter, T. H. Borst, A. Vescan, and E. Kohn

Appl. Phys. Lett. 68, 3558 (1996); http://dx.doi.org/10.1063/1.116636 (3 pages) | Cited 19 times

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A new bias‐enhanced nucleation method of forming highly oriented diamond on Si(100) is reported using an alternating current bias source. The percentage of aligned particles via alternating current bias‐enhanced nucleation (ac BEN) was greater than 50%. This is compared to less than 10% highly oriented particles when using a conventional negative dc substrate bias. Based on previous work in this area, the peak negative voltage portion of the ac wave form is believed to be responsible for enhancing diamond nucleation. The positive and moderate negative voltage portion of the ac wave form appears to aid the process of forming the highly oriented diamond. © 1996 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Epicentral and near epicenter surface displacements on pulsed laser irradiated metallic surfaces

James B. Spicer and David H. Hurley

Appl. Phys. Lett. 68, 3561 (1996); http://dx.doi.org/10.1063/1.116637 (3 pages) | Cited 7 times

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The elastic deformations associated with the pulsed laser, photothermal heating of an aluminum alloy surface have been measured within the irradiated region using a Michelson‐type interferometer. The displacements within this region have been measured and have been compared to calculations based on temperature‐rate dependent thermoelasticity theory. The quantitative agreement between calculation and experiment shows the contributions of the local thermal expansion and the propagating acoustic modes on the overall displacements at the epicenter and near the epicenter of the irradiated region. Nonlinear effects on the propagation of the near‐field surface acoustic wave may be present. © 1996 American Institute of Physics.
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79.20.Ds Laser-beam impact phenomena
68.35.Md Surface thermodynamics, surface energies

Inverse twisted nematic liquid‐crystal device

J. S. Patel and G. B. Cohen

Appl. Phys. Lett. 68, 3564 (1996); http://dx.doi.org/10.1063/1.116638 (3 pages) | Cited 17 times

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In this letter we demonstrate an inverse twisted nematic device in which the input polarized light is unaffected in the field‐off state and produces a polarization rotation in the field‐on state. This is done by using a homeotropically aligned sample containing chiral nematic liquid crystal with negative dielectric anisotropy and specially prepared surfaces. © 1996 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
61.30.-v Liquid crystals

Microstructure and deposition rate of aluminum thin films from chemical vapor deposition with dimethylethylamine alane

Byoung‐Youp Kim, Xiaodong Li, and Shi‐Woo Rhee

Appl. Phys. Lett. 68, 3567 (1996); http://dx.doi.org/10.1063/1.116639 (3 pages) | Cited 12 times

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Deposition of aluminum film from DMEAA in the temperature range of 100–300 °C has been studied. In this temperature range, there is a maximum deposition rate at around 150 °C. The film deposited at 190 °C has elongated blocklike grain shapes, which are ∼600 nm in width and 930 nm in length. Grains in the film deposited at 150 °C showed an equiaxed structure with grain size in the range of 100–300 nm in a film with 600 nm thickness. Aluminum oxide particle inclusion was observed especially at high deposition temperature. Plausible reaction pathways of DMEAA dissociation were suggested to explain the experimental observations. © 1996 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Influence of dislocation loops created by amorphizing implants on point defect and boron diffusion in silicon

H. S. Chao, P. B. Griffin, and J. D. Plummer

Appl. Phys. Lett. 68, 3570 (1996); http://dx.doi.org/10.1063/1.116640 (3 pages) | Cited 23 times

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An experiment has been performed in which wafers with boron‐doped, buried marker layers were implanted with 100 keV, 2×1015 cm−2 Si. This is an amorphizing implant. A second implant of B was introduced prior to any post‐implant annealing such that the implanted B was completely contained within the preamorphized region. After the implants, samples were annealed at various temperatures for various times and secondary‐ion mass spectroscopy was used to obtain the dopant profiles. It was found that the buried marker layer exhibited normal transient‐enhanced diffusion behavior. However, the B in the preamorphized region did not experience any significant amount of motion. This suggests that the solid phase regrowth of the amorphous layer did not cause a redistribution of the dopant atoms within that layer, and also the plane of dislocation loops that form at the amorphous/crystalline interface is an effective barrier against the interstitial damage diffusing upwards from the nonamorphized tail of the amorphizing Si implant. The same behavior was observed when As or P implants are used instead of the B implant. This type of behavior has been simulated using a model considering the growth of stacking faults bounded by dislocation loops. © 1996 American Institute of Physics.
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61.72.J- Point defects and defect clusters
61.72.Lk Linear defects: dislocations, disclinations
61.80.Jh Ion radiation effects

Atomic layer epitaxial predeposition for GaAs growth on Si

Utpal Das, S. Dhar, and Mousumi Mazumdar

Appl. Phys. Lett. 68, 3573 (1996); http://dx.doi.org/10.1063/1.116641 (3 pages)

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We report a two‐step growth process, using an atomic layer epitaxially grown GaAs predeposition layer for the growth of GaAs/Si layers by metalorganic vapor phase epitaxy technique. Photoluminescence and deep‐level transient spectroscopy techniques are used to show that the quality of the grown material is comparable to that grown by a much complicated procedure involving strained layer superlattice buffers introduced between the active GaAs layer and the Si substrate. © 1996 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Photorefractive p‐i‐n diode quantum well operating at 1.55 μm

C. De Matos, A. Le Corre, H. L’Haridon, B. Lambert, S. Salaün, J. Pleumeekers, and S. Gosselin

Appl. Phys. Lett. 68, 3576 (1996); http://dx.doi.org/10.1063/1.116642 (3 pages) | Cited 12 times

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We demonstrate the performance of a semiconductor photorefractive p‐i‐n diode operating at 1.55 μm in the longitudinal quantum‐confined Stark geometry. The device structure consists of a semi‐insulating InP–GaInAs(P) multiple quantum well, sandwiched between two trapping regions, and embedded in a p‐n junction. In this structure, the measured output diffraction efficiency reaches 0.6%. This value is close to the output diffraction efficiency value estimated from electroabsorption measurements. © 1996 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.79.Hp Optical processors, correlators, and modulators

Real‐time investigation of In surface segregation in chemical beam epitaxy of In0.5Ga0.5P on GaAs (001)

M. Mesrine, J. Massies, C. Deparis, N. Grandjean, and E. Vanelle

Appl. Phys. Lett. 68, 3579 (1996); http://dx.doi.org/10.1063/1.116643 (3 pages) | Cited 13 times

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Surface segregation processes during the growth of Ga0.5In0.5P/GaAs heterostructures by chemical beam epitaxy have been investigated in real time using reflection high‐energy electron diffraction (RHEED). It is shown that In segregation occurs at both GaInP on GaAs and GaAs on GaInP interfaces. Resulting composition profiles are deduced from the RHEED data. © 1996 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Photoluminescence in ultrafine zinc sulfide thin film

Qianwang Chen, Xiaoguang Li, Yitai Qian, Jingsheng Zhu, Guien Zhou, Weiping Zhang, and Yuheng Zhang

Appl. Phys. Lett. 68, 3582 (1996); http://dx.doi.org/10.1063/1.116644 (3 pages) | Cited 1 time

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Ultrafine (60 nm×10 nm) ZnS:Cu thin film with thickness 200 nm has been prepared by a hydrothermal technique at a relatively low temperature (140 °C). The optical properties of the Cu‐doped ZnS thin film were found to be different from that of the bulk material and normal thin film with large grain size. Compared to the bulk material, the peak position of the blue band shifts to a higher energy (from 445 to 430 nm), and a possible new blue band (peak position at 415 nm) appears as the copper concentration in the ZnS thin film reaches 5×10−3 g/g, which is attributed to the equilibrium doping condition and the combination of the Cu+ ion with a dangling sulfur bond on the interface of fine grains, respectively. © 1996 American Institute of Physics.
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78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors

Coulomb blockade oscillations at room temperature in a Si quantum wire metal‐oxide‐semiconductor field‐effect transistor fabricated by anisotropic etching on a silicon‐on‐insulator substrate

H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, T. Hiramoto, and T. Ikoma

Appl. Phys. Lett. 68, 3585 (1996); http://dx.doi.org/10.1063/1.116645 (3 pages) | Cited 92 times

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We have developed a very controllable fabrication process of an extremely narrow (∼10 nm) quantum wire metal‐oxide‐semiconductor field‐effect transistor (MOSFET) on a separation‐by‐implanted‐oxygen (SIMOX) substrate using anisotropic etching and selective oxidation technique. The drain current versus gate voltage characteristics show oscillations caused by Coulomb blockade even at room temperature. The oscillations split into several sharp peaks when the temperature is decreased, indicating that the channel is separated by several serial coupled quantum dots and that the quantum levels of these dots correspond to the observed fine peaks. © 1996 American Institute of Physics.
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85.30.Tv Field effect devices
73.23.Hk Coulomb blockade; single-electron tunneling

Electrical and structural properties of PtSi films in deep submicron lines

D.‐X. Xu, J. P. McCaffrey, S. R. Das, G. C. Aers, and L. E. Erickson

Appl. Phys. Lett. 68, 3588 (1996); http://dx.doi.org/10.1063/1.116646 (3 pages) | Cited 15 times

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Electrical and structural properties of platinum monosilicide (PtSi) in deep submicron lines are reported. The sheet resistance of the silicide films was found to be rather independent of the linewidth down to dimensions as small as 0.15 μm. Plan‐view and cross‐sectional transmission electron microscopy was performed to study the structural properties of these films, including their gain structures and lateral growth. The insensitive nature of the electrical properties of the silicide films to the linewidths is correlated with their structural properties. © 1996 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
73.61.At Metal and metallic alloys
68.55.-a Thin film structure and morphology

Conduction band offsets in CdZnSSe/ZnSSe single quantum wells measured by deep level transient spectroscopy

P. F. Baude, M. A. Haase, G. M. Haugen, K. K. Law, T. J. Miller, K. Smekalin, J. Phillips, and P. Bhattacharya

Appl. Phys. Lett. 68, 3591 (1996); http://dx.doi.org/10.1063/1.116647 (3 pages) | Cited 1 time

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Conduction‐band offsets in wide‐band‐gap CdZnSSe/ZnSSe single quantum well structures have been characterized by deep level transient spectroscopy (DLTS) measurements. 50 Å thick Cd0.3Zn0.7S0.06Se0.94 single quantum wells with ZnS0.06Se0.94 barriers were grown by molecular beam epitaxy on GaAs substrates. A thermal emission energy from the quaternary wells of 179±10 meV was measured. This corresponds to a conduction‐band offset energy of ∼251±20 meV. © 1996 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states

Deposition of hydrogen‐free diamond‐like carbon film by plasma enhanced chemical vapor deposition

Kyu Chang Park, Jong Hyun Moon, Jin Jang, and Myung Hwan Oh

Appl. Phys. Lett. 68, 3594 (1996); http://dx.doi.org/10.1063/1.116648 (2 pages) | Cited 25 times

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Hydrogen‐free diamond‐like carbon (DLC) films were deposited by the layer‐by‐layer technique using plasma enhanced chemical vapor deposition (PECVD), i.e., the alternative deposition of thin DLC layer and subsequent CF4 plasma exposure on its surface. The hydrogen‐free DLC could be grown on the Si wafer by repeated deposition of the 5 nm DLC layer and subsequent 200 s CF4 plasma exposure on its surface. On the other hand, the conventional DLC deposited by PECVD contains 25 at. % hydrogen inside. The CF4 plasma exposure on the thin DLC layer appears to etch weak C–C bonds and break hydrogen bonds, resulting in a widening optical band gap and increasing conductivity activation energy. © 1996 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

InGaAs quantum wires grown by low pressure metalorganic chemical vapor deposition on InP V‐grooves

M. Kappelt, M. Grundmann, A. Krost, V. Türck, and D. Bimberg

Appl. Phys. Lett. 68, 3596 (1996); http://dx.doi.org/10.1063/1.116649 (3 pages) | Cited 9 times

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Single InGaAs quantum wires were fabricated by low pressure metal organic chemical vapor deposition on V‐grooved InP substrates. For substrate patterning a new wet chemical etching process that leads to high quality V‐grooves with {111}A facets was used. The growth parameters of the InP buffer layer have a strong impact on the quantum wire formation. Scanning electron microscopy, photoluminescence, and spatially resolved cathodoluminescence experiments have been performed to characterize the structures. The crescent shaped InGaAs quantum wires have dimensions of about 13 nm height and 100 nm width. The wire luminescence is found to be at λ=1575 nm (FWHM=17 meV). © 1996 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
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