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8 Jan 1996

Volume 68, Issue 2, pp. 141-277

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Precipitation behaviors of Cu and Fe on Frank‐type partial dislocations in Czochralski‐grown silicon

B. Shen, R. Zhang, Y. Shi, Y. D. Zheng, T. Sekiguchi, and K. Sumino

Appl. Phys. Lett. 68, 214 (1996); http://dx.doi.org/10.1063/1.116464 (3 pages) | Cited 10 times

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Precipitation behaviors of Cu and Fe on Frank‐type partial dislocations bounding bulk stacking faults in Czochralski‐grown silicon are investigated by means of the electron beam‐induced‐current (EBIC) technique and transmission electron microscopy (TEM). Frank partials in a Cu‐contaminated specimen do not exhibit an EBIC contrast at room temperature when the specimen is cooled slowly; however, in the Fe‐contaminated specimen, they exhibit EBIC contrast at room temperature due to their Fe contamination. The TEM micrograph shows that Cu develops precipitate colonies in the region away from stacking faults and does not precipitate on Frank partials in the specimen. The results indicate that Fe impurity decorates Frank partials more easily than Cu impurity in Si. © 1996 American Institute of Physics.
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61.72.Lk Linear defects: dislocations, disclinations
61.72.Qq Microscopic defects (voids, inclusions, etc.)

Chemistry, diffusion, and electronic properties of a metal/organic semiconductor contact: In/perylenetetracarboxylic dianhydride

Y. Hirose, A. Kahn, V. Aristov, and P. Soukiassian

Appl. Phys. Lett. 68, 217 (1996); http://dx.doi.org/10.1063/1.116465 (3 pages) | Cited 60 times

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We present a photoemission investigation of the interface between In and 3, 4, 9, 10 perylenetetracarboxylic dianhydride (PTCDA). The interfacial region is very wide due to an anomalously fast diffusion of In into the organic layer. In also reacts with the anhydride end groups of the molecules. The absence of metal clustering, which permits diffusion, is believed to be due to the ionization of In and ion–ion repulsion in the PTCDA matrix. Finally, the ohmicity of the In/PTCDA contact is attributed to reaction‐induced electronic gap states created throughout the wide interfacial region upon formation of the interface. This study provides the first direct correlation between chemistry and electronic properties of a metal contact on an organic molecular semiconductor. © 1996 American Institute of Physics.
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68.35.Ct Interface structure and roughness
68.35.Fx Diffusion; interface formation
73.40.Ns Metal-nonmetal contacts

Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature

A. S. Brown, P. Bhattacharya, J. Singh, P. Zaman, S. Sen, and F. Turco

Appl. Phys. Lett. 68, 220 (1996); http://dx.doi.org/10.1063/1.116466 (3 pages) | Cited 2 times

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We have observed a degradation in the epitaxial layer quality of AlInAs when it is grown by molecular beam epitaxy at a substrate temperature of about 400 °C compared to that for alloys grown at 300 and 500 °C. The barrier height and ideality factor of Ti– and Au–AlInAs Schottky diodes also exhibit large spatial variations and dependence on growth temperatures. The observed phenomena can be explained by invoking a kinetic growth model or thermodynamic phase equilibria in the growing surface layer. © 1996 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Photoluminescence study of deep etched InGaAs/GaAs quantum wires and dots defined by low‐voltage electron beam lithography

R. Steffen, Th. Koch, J. Oshinowo, F. Faller, and A. Forchel

Appl. Phys. Lett. 68, 223 (1996); http://dx.doi.org/10.1063/1.116467 (3 pages) | Cited 19 times

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Combining low‐voltage electron beam lithography (EBL) and wet chemical etching, arrays of deep etched InGaAs/GaAs quantum wires with widths down to 15 nm and dots with minimum diameters of 27 nm have been fabricated. The application of low‐voltage EBL strongly reduces the proximity effect during pattern exposure and allows the formation of very homogeneous nanostructure arrays. Low‐excitation photoluminescence (PL) spectroscopy of both wires and dots reveals a structure size dependent blue shift of the emission lines up to 14 meV. This energy shift is caused by lateral confinement and shows a clear dependence on the structure dimensionality. The quantization is calculated with a simple model using only standard InGaAs/GaAs material parameters and the geometrical structure widths measured with a scanning electron microscope (SEM). © 1996 American Institute of Physics.
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78.55.Cr III-V semiconductors
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

In situ arsenic‐doped polycrystalline silicon as a low thermal budget emitter contact for Si/Si1−xGex heterojunction bipolar transistors

C. A. King, R. W. Johnson, M. R. Pinto, H. S. Luftman, and J. Munanka

Appl. Phys. Lett. 68, 226 (1996); http://dx.doi.org/10.1063/1.116468 (3 pages)

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A low thermal budget emitter contact with low specific contact resistivity (ρc) with the absence of transient enhanced diffusion (TED) effects is essential to fabricate integratable high performance Si/SiGe heterojunction bipolar transistors (HBTs). We report the use of in situ As‐doped polycrystalline silicon (polysilicon) from a low base pressure rapid thermal episystem for this purpose and find that it meets all the requirements. We used secondary ion mass spectrometry to find that 18 nm, heavily B‐doped layers remain intact after implantation into the surface polysilicon and annealing at 800 °C for 40 s. Similar samples without the surface polylayer displayed extreme broadening of B profile. Kelvin crossbridge resistors together with 2D device simulations revealed that ρc is an extremely low value of 1.2×10−8 Ω cm2 in as‐deposited material. Fabrication of simple 30×30 μm2 mesa isolated HBT devices showed IC to be more than two decades higher in devices with only an in situ As‐doped polyemitter compared with devices that incorporated a surface implant into the single crystal portion of the emitter before polysilicon deposition. These results demonstrate that this doped polycrystalline silicon material is an excellent choice for emitter contacts to HBT devices. © 1996 American Institute of Physics.
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85.30.Pq Bipolar transistors

Electric breakdown in GaN p‐n junctions

V. A. Dmitriev, K. G. Irvine, C. H. Carter, N. I. Kuznetsov, and E. V. Kalinina

Appl. Phys. Lett. 68, 229 (1996); http://dx.doi.org/10.1063/1.116469 (3 pages) | Cited 44 times

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Electric breakdown in GaN p‐n junctions was investigated. GaN p+‐p‐n+ structures were grown on 6H–SiC substrates by metalorganic chemical vapor deposition. Mg and Si were used as dopants. Mesa structures were fabricated by reactive ion etching. Capacitance–voltage measurements showed that the p‐n junctions were linearly graded. The impurity gradient in the p‐n junctions ranged from 2×1022 to 2×1023 cm−4. Reverse current–voltage characteristics of the p‐n junctions were studied in the temperature range from 200 to 600 K. The diodes exhibited abrupt breakdown at a reverse voltage of 40–150 V. The breakdown had a microplasmic nature. The strength of the electric breakdown field in the p‐n junctions depended on the impurity gradient and was measured to be from 1.5 to 3 MV/cm. It was found that the breakdown voltage increases with temperature. The temperature coefficient of the breakdown voltage was ∼2×10−2 V/K. © 1996 American Institute of Physics.
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72.20.Ht High-field and nonlinear effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Studies on damage removing efficiency of B11+ and BF+2 implanted Si0.84Ge0.16 epilayers by rapid thermal annealing

L. P. Chen, T. C. Chou, C. H. Chien, and C. Y. Chang

Appl. Phys. Lett. 68, 232 (1996); http://dx.doi.org/10.1063/1.116470 (3 pages) | Cited 5 times

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High quality metastable pseudomorphic Si1−xGex epilayers were grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4. These epilayers were implanted with 40 keV B11+ and 100 keV BF+2 ions at a dose of 1×1015 ions/cm2 and then annealed by rapid thermal annealing (RTA) processes at temperatures of 600, 650, 700, and 750 °C for 30 s duration. Double‐crystal x‐ray diffractometry was used to evaluate the level of the implant‐induced damage and the damage removing efficiency of both ion implanted samples at different RTA conditions. The results show that the RTA process is more effective at removing damage from B11+ implanted samples than from those implanted with BF+2. © 1996 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
61.72.uf Ge and Si
61.80.Jh Ion radiation effects

A bilayer Ti/Ag ohmic contact for highly doped n‐type GaN films

J. D. Guo, C. I. Lin, M. S. Feng, F. M. Pan, G. C. Chi, and C. T. Lee

Appl. Phys. Lett. 68, 235 (1996); http://dx.doi.org/10.1063/1.116471 (3 pages) | Cited 46 times

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Ohmic contacts with low resistance are fabricated on n‐type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP‐MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5×1017 to 1.7×1019 cm−3. The lowest value for the specific contact resistivity of 6.5×10−5 Ω cm2 is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV. © 1996 American Institute of Physics.
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73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts

Influence of ion bombardment on Si and SiGe films during molecular beam epitaxy growth

W.‐X. Ni, G. V. Hansson, I. A. Buyanova, A. Henry, W. M. Chen, and B. Momemar

Appl. Phys. Lett. 68, 238 (1996); http://dx.doi.org/10.1063/1.116472 (3 pages) | Cited 9 times

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Growth of Si and SiGe layers using molecular beam epitaxy was carried out with the substrate at a floating, positive or negative bias, in order to investigate effects of ion bombardment on the crystalline quality of grown materials. Although ion energies (100–1500 eV) and ion/atom flux ratios (∼0.005) used in the experiments were quite low, significant lattice distortion along the growth direction (Δa⊥/as up to ∼300 ppm) was observed by high resolution x‐ray diffraction from the Si layers grown at 420 °C. At the same time, a broadband transition was observed in photoluminescence measurements from both Si and SiGe layers. Based on results of the annihilation behavior during postgrowth treatments using thermal annealing and hydrogenation, we attribute these effects to the ion bombardment induced formation and injection of different types of pointlike defects and defect clusters, which degrade the optical and electrical properties of grown layers. © 1996 American Institute of Physics.
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61.72.J- Point defects and defect clusters
61.80.Jh Ion radiation effects

Broadband Bragg filter in microfabricated AlGaAs waveguides

R. P. Espindola, M. K. Udo, D. Y. Chu, S. L. Wu, S. T. Ho, R. C. Tiberio, P. F. Chapman, H. Q. Hou, and T. Y. Chang

Appl. Phys. Lett. 68, 241 (1996); http://dx.doi.org/10.1063/1.116473 (3 pages) | Cited 5 times

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We report on the fabrication and characterization of broadband Bragg filters in microfabricated AlGaAs waveguides. Electron‐beam lithography and chemically assisted ion‐beam etching were used to fabricate first‐order gratings with 250 nm period. Bragg filters with rejection bandwidth ∼15 nm and centered at ∼1.6 μm are demonstrated. © 1996 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers

Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs

H. Yang, O. Brandt, M. Wassermeier, J. Behrend, H. P. Schönherr, and K. H. Ploog

Appl. Phys. Lett. 68, 244 (1996); http://dx.doi.org/10.1063/1.116474 (3 pages) | Cited 37 times

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We use in situ reflection high‐energy electron diffraction to investigate the growth kinetics of cubic (001)‐GaN/GaAs grown by plasma‐assisted molecular beam epitaxy. We find that the GaN surface exhibits three surface reconstructions having (1×1), (2×2), and c(2×2) symmetries, which correspond to Ga adatom coverages of 0, 0.5, and 1, respectively. We demonstrate that the transient behavior of the half‐order streak intensity is a sensitive probe of the surface stoichiometry during growth. Particularly, these measurements enable us to directly determine the effective N flux incorporated into the crystal. © 1996 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Silicon interstitials: Injection during palladium silicide formation and trapping by ion implantation damage

Per Kringhøj

Appl. Phys. Lett. 68, 247 (1996); http://dx.doi.org/10.1063/1.116475 (3 pages)

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Injection of point defects into Si was examined by deep level transient spectroscopy. Preimplanted samples containing di‐vacancies and O‐vacancy pairs fabricated by low dose, high energy implantation of Ge (∼1×108, cm−2, 1.4 and 6.0 MeV) were used to monitor injection of point defects formed by low energy implants or Pd silicides. It was found that evaporation of Pd on preimplanted Si leads to a significant reduction of both the di‐vacancy and O‐vacancy signals, indicating injection of Si interstitials during the silicide formation. On the other hand low energy implants (52 keV Ge, 1×1013−5×1014 cm−2) resulted only in a small reduction of these signals probably due to self‐trapping of the created interstitials, and furthermore prevented the reduction from the silicide formation, due to trapping of the injected interstitials in the damaged layer. © 1996 American Institute of Physics.
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61.72.J- Point defects and defect clusters
66.30.-h Diffusion in solids
71.55.Cn Elemental semiconductors

Tunable phase locking of stacked Josephson flux‐flow oscillators

E. Goldobin, H. Kohlstedt, and A. V. Ustinov

Appl. Phys. Lett. 68, 250 (1996); http://dx.doi.org/10.1063/1.115652 (3 pages) | Cited 14 times

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A tuning technique for mutual phase locking of two vertically stacked long Josephson junctions is suggested and successfully tested. The technique is based on passing a current through the middle electrode between two tunnel barriers. Mutually synchronized oscillation modes in the Nb/Al–AlOx/Nb stack are found to be tunable in the frequency range from 180 to 420 GHz. Presented results extend the possibility of using stacked long Josephson junctions as coherently operating oscillators for millimeter and submillimeter wave bands. © 1996 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.Cp Josephson devices

Epitaxial deposition and properties of Bi2Sr2CaCu2O8+δ/Bi2Sr2YCu2O8+δ/Bi2Sr2CaCu2 O+δ trilayers

A. M. Cucolo, R. Di Leo, P. Romano, E. Bacca, M. E. Gomez, W. Lopera, P. Prieto, and J. Heiras

Appl. Phys. Lett. 68, 253 (1996); http://dx.doi.org/10.1063/1.115653 (3 pages) | Cited 11 times

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We have deposited Bi2Sr2CaCu2O8+δ/Bi2Sr2YCu2O8+δ/Bi2Sr2CaCu2 O+δ (2212/22Y2/2212) heterostructures by an in situ dc sputtering technique at high oxygen pressures on (001) SrTiO3 substrates. The formation of highly c‐axis oriented trilayers with sharp interfaces is demonstrated by x‐ray diffraction and transmission electron microscope (TEM) analysis. Both the top and the bottom 2212 layers are superconducting below 87 K. Tunneling phenomena on junctions fabricated from these trilayers are observed. The conductance versus voltage curves at low temperatures exhibit a change of slope indicative of a gap structure at about 30 mV, a zero‐bias peak, as well as linear background at high voltages. © 1996 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.78.Fk Multilayers, superlattices, heterostructures
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Magnetic coupling in amorphous Co–Dy–B and Fe–Dy–B alloys

R. Krishnan, L. Driouch, F. E. Kayzel, and J. J. J. M. Franse

Appl. Phys. Lett. 68, 256 (1996); http://dx.doi.org/10.1063/1.115654 (2 pages)

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We have studied the magnetization of amorphous Co–Dy–B and Fe–Dy–B alloys at 1.5 K under very high fields up to 35 T. Above a critical field the antiferromagnetic coupling breaks as indicated by the strong increase in the magnetization. This is explained by a model. The analysis of this behavior enables us to obtain some important parameters of fundamental interest, such as, the molecular field coefficient, the exchange integral, etc. © 1996 American Institute of Physics.
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75.30.-m Intrinsic properties of magnetically ordered materials
75.50.Gg Ferrimagnetics
75.50.Kj Amorphous and quasicrystalline magnetic materials

Magnetic phase transition in CeC2 crystals encapsulated in carbon nanocages

Yositaka Yosida and Isamu Oguro

Appl. Phys. Lett. 68, 258 (1996); http://dx.doi.org/10.1063/1.115655 (2 pages) | Cited 2 times

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An experimental study of magnetization process for CeC2 crystals encapsulated in carbon nanocages in the low‐temperature antiferromagnetic region (T<30 K) in steady magnetic fields up to 15 T is reported. The magnetization curves show a dramatic change at a critical field Hc∼3.5 T. At a particular field Hs (<12±1 T), net magnetization levels off. The behavior at Hc is ascribed to a phase transition between an antiferromagnetic and a spin‐flop state, and that at Hs to a phase transition between the spin‐flop and a paramagnetic state. The magnetic phase diagram in the applied field and temperature plane is accurately determined based on the results of Hc(T) and Hs(T). © 1996 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
75.50.Tt Fine-particle systems; nanocrystalline materials

Crystal structure and magnetic properties of LaCo10Al3

Yongquan Guo, Jingkui Liang, Weihua Tang, Yanming Zhao, and Guanghui Rao

Appl. Phys. Lett. 68, 260 (1996); http://dx.doi.org/10.1063/1.115656 (3 pages) | Cited 2 times

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The crystal structure and magnetic properties of a LaCo10Al3 intermetallic compound have been investigated by x‐ray powder diffraction and magnetic measurement. The space group of the LaCo10Al3 structure is I4/mcm, which can be derived from the cubic NaZn13‐type structure. Each unit cell contains four formula units of LaCo10Al3. The lattice parameters are a=8.085(1) Å, c=11.624(8) Å, and the calculated density is Dx=7.07(3) g/cm3. In each unit cell, there are five kinds of equivalent positions, i.e., 4a, 16l(1), 16k 16l(2), and 4d, which are occupied by 4La, 16Co(1), 16Co(2), 16(Co+Al) and 4Co(3) atoms, respectively. The tetragonal LaCo10Al3 intermetallic compound is ferromagnetic with a Curie temperature of 840 K. The magnetic moment per Co atom is 0.84μB, which can be explained by the magnetic valence model. © 1996 American Institute of Physics.
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61.05.C- X-ray diffraction and scattering
75.30.Gw Magnetic anisotropy
75.50.Cc Other ferromagnetic metals and alloys

Highly coupled dielectric behavior of porous ceramics embedding a polymer

T. E. Gómez Alvarez‐Arenas and F. Montero de Espinosa

Appl. Phys. Lett. 68, 263 (1996); http://dx.doi.org/10.1063/1.115657 (3 pages) | Cited 9 times

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We present a theoretical approach to study the dielectric properties of porous ceramics and composite materials and explain the experimentally observed notable influence of the coupling between the components of a saturated porous ceramic on the final behavior of the sample. This model is based on the assumption of a dielectric coupling between the components that modifies the expected averaged properties of the material. © 1996 American Institute of Physics.
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77.22.-d Dielectric properties of solids and liquids
77.84.Lf Composite materials

Measurement of the refractive index of thin SiO2 films using tunneling current oscillations and ellipsometry

K. J. Hebert, S. Zafar, E. A. Irene, R. Kuehn, T. E. McCarthy, and E. K. Demirlioglu

Appl. Phys. Lett. 68, 266 (1996); http://dx.doi.org/10.1063/1.115658 (3 pages) | Cited 21 times

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We use Fowler–Nordheim tunneling current oscillations to accurately determine the thicknesses of ultrathin SiO2 films, and with the thicknesses as input, we employ precision single wavelength ellipsometry to determine the real part of the refractive index for thin SiO2 films in the range of 4–6 nm. An average value for this refractive index was found to be 1.894±0.110. This value is shown to yield SiO2 thicknesses to an accuracy of ±0.1 nm. A SiO2 thickness‐refractive index interpolation formula for the thin film regime is given. © 1996 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Nk Insulators

Thermally poled silica glass: Laser induced pressure pulse probe of charge distribution

P. G. Kazansky, A. R. Smith, P. St. J. Russell, G. M. Yang, and G. M. Sessler

Appl. Phys. Lett. 68, 269 (1996); http://dx.doi.org/10.1063/1.115659 (3 pages) | Cited 23 times

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Charge distributions in thermally poled silica glass are mapped by using laser induced pressure pulse technique. The experimental results may be explained through postulating the formation of both real space charge layers and dipole polarization inside the depletion region. © 1996 American Institute of Physics.
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42.65.-k Nonlinear optics
42.70.Ce Glasses, quartz

Low temperature processing of Nb‐doped Pb(Zr,Ti)O3 capacitors with La0.5Sr0.5CoO3 electrodes

H. N. Al‐Shareef, B. A. Tuttle, W. L. Warren, D. Dimos, M. V. Raymond, and M. A. Rodriguez

Appl. Phys. Lett. 68, 272 (1996); http://dx.doi.org/10.1063/1.115660 (3 pages) | Cited 27 times

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The effect of crystallization temperature on the electrical properties of sol‐gel derived Pb(Zr,Ti,Nb)O3 or PNZT capacitors with La0.5Sr0.5CoO3 (LSCO) electrodes has been investigated. It is demonstrated that LSCO//PNZT(4/30/70)//LSCO capacitors can be fabricated at temperatures as low as 550 °C without significant degradation in their ferroelectric and dielectric properties. Lowering the process temperature to 500 °C resulted in substantial degradation in capacitor properties. Nonetheless, all capacitors processed in the 500 °C to 675 °C range exhibited essentially no fatigue up to 5×109 switching cycles. The low temperature processing is significant as it indicates that this ferroelectric capacitor technology is compatible with high density nonvolatile memory architectures. In other words, these process temperatures are low enough to maintain plug integrity and to prevent degradation of the underlying CMOS circuitry in a high density ferroelectric memory. © 1996 American Institute of Physics.
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85.30.Tv Field effect devices
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Al/Al2O3/Al single electron transistors operable up to 30 K utilizing anodization controlled miniaturization enhancement

Y. Nakamura, D. L. Klein, and J. S. Tsai

Appl. Phys. Lett. 68, 275 (1996); http://dx.doi.org/10.1063/1.115661 (3 pages) | Cited 21 times

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We have developed a method, anodization controlled miniaturization enhancement (ACME), to make ultrasmall tunnel junctions. Anodization of electron‐beam fabricated Al/Al2O3/Al tunnel junctions reduces their effective areas and capacitances, which realizes single electron transistors operating at high temperatures up to nearly 30 K. The limit of the increase in the charging energy is attributed to the initial scattering in the junction sizes. © 1996 American Institute of Physics.
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85.35.Gv Single electron devices
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
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