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15 Jan 1996

Volume 68, Issue 3, pp. 281-431

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Oscillator strength dependence of cavity‐polariton mode splitting in semiconductor microcavities

Y. Kadoya, K. Kameda, M. Yamanishi, T. Nishikawa, T. Kannari, T. Ishihara, and I. Ogura

Appl. Phys. Lett. 68, 281 (1996); http://dx.doi.org/10.1063/1.116059 (3 pages) | Cited 9 times

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We demonstrate the continuous alteration of the exciton‐polariton mode splitting in semiconductor microcavities, through the change of the exciton oscillator strength induced by quantum confined Stark effect (QCSE). This is clear evidence of the direct influence of the oscillator strength on the mode splitting. A wide range variation, from 0 to 2 nm, of the splitting is obtained by the tuning of the cavity resonance based on the in‐plane dispersion of the photon mode as well as the tuning of exciton energy by QCSE. The influence of the field‐induced exciton line broadening on the mode splitting is also observed for the applied electric field as high as 90 kV/cm. © 1996 American Institute of Physics.
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71.35.-y Excitons and related phenomena
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
78.66.Fd III-V semiconductors

Dual‐wavelength AlGaAs/GaAs laser by selective removal of a quantum well in an asymmetric dual quantum well structure

K. J. Beernink, D. Sun, R. L. Thornton, and D. W. Treat

Appl. Phys. Lett. 68, 284 (1996); http://dx.doi.org/10.1063/1.116060 (3 pages) | Cited 3 times

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The longer‐wavelength quantum well in an AlGaAs/GaAs asymmetric dual quantum well laser structure was selectively removed by localized intermixing. High Si doping on each side of the longer‐wavelength well caused intermixing during an anneal under a SiNx cap, while leaving the other nearby well intact. During an anneal under an exposed GaAs surface layer, both quantum wells remained intact. By patterning the surface with alternating SiNx and exposed GaAs, the longer‐wavelength quantum well was selectively intermixed. Integrated broad area lasers were fabricated with threshold current density and external quantum efficiency of 260 A/cm2 and 30%/facet at a wavelength of 751 nm in capped regions and 195 A/cm2, 32%/facet at 824 nm in the uncapped regions. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Optically induced birefringence in bacteriorhodopsin as an optical limiter

George E. Dovgalenko, Matthew Klotz, Gregory J. Salamo, and Gary L. Wood

Appl. Phys. Lett. 68, 287 (1996); http://dx.doi.org/10.1063/1.116061 (3 pages) | Cited 16 times

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Experimental data are presented, which demonstrates an optical limiter based on a large birefringence which is optically induced in bacteriorhodopsin. The induced birefringence is observed to be a function of incident intensity, but saturates at a value of about 0.454 W/cm2. A measured value of Δn of 6.6×10−4 at a wavelength of 514 nm is reported. The observed birefringence is found to be in good agreement with a proposed model. © 1996 American Institute of Physics.
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42.65.-k Nonlinear optics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.20.Fm Birefringence

Thin film diamond photodiode for ultraviolet light detection

Michael D. Whitfield, Simon SM Chan, and Richard B. Jackman

Appl. Phys. Lett. 68, 290 (1996); http://dx.doi.org/10.1063/1.116062 (3 pages) | Cited 31 times

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A photodiode has been constructed from lightly boron doped, Si supported, thin film chemically vapor deposited (CVD) diamond which shows over five orders of magnitude discrimination between deep UV (≤220 nm) and visible light. A thin (10 nm) gold Schottky barrier with an associated Ti–Ag–Au ohmic contact was used to create a rectifying device with low (≤2 pA) dark currents when reversed biased. This structure showed a sharp cut off in photoresponse at 220 nm, the band gap energy of diamond. Conversely, a photoconductive device fabricated from similar (nominally undoped) material gave a broader UV photoresponse and displayed high dark currents; the superior performance of the diode structure on fine grain material is discussed. © 1996 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)

Noncritical phase‐matched second‐harmonic generation with an organic crystal, 4‐(isopropylcarbamoyl)nitrobenzene

Hiroyuki Endoh, Miho Kawaharada, and Etsuo Hasegawa

Appl. Phys. Lett. 68, 293 (1996); http://dx.doi.org/10.1063/1.116063 (3 pages) | Cited 2 times

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This letter reports an organic crystal that can generate a second‐harmonic beam under type II noncritical phase‐matching conditions. The cleavage plane of a 4‐(isopropylcarbamoyl)nitrobenzene (PCNB) crystal was found by theoretical calculation to have a type II noncritical phase‐matched incident surface. This enables the PCNB crystal to convert Ti:sapphire laser light (930 nm) into 465 nm blue light with high conversion efficiency (1%/W at 5.5 mm path length). © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Jk Polymers and organics

Theoretical study of room temperature optical gain in GaN strained quantum wells

W. W. Chow, A. F. Wright, and J. S. Nelson

Appl. Phys. Lett. 68, 296 (1996); http://dx.doi.org/10.1063/1.116064 (3 pages) | Cited 49 times

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The determination of gain properties in group III nitride quantum wells is complicated by the incomplete knowledge of band structure properties, and the need for a consistent treatment of many‐body Coulomb effects. This letter describes an approach that involves a first‐principles band structure calculation, the results of which are incorporated into a microscopic laser theory where many‐body Coulomb effects are treated in a consistent manner. Using this approach, we investigate quantum well structures composed of alloys of GaN, AlN, and InN, in particular, GaN–AlInN, which has high confinement potentials in both strained and unstrained configurations. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

An infrared optical field effect transistor with high speed response

F. Y. Chen, Y. K. Fang, M. J. Sun, and Jiann‐Ruey Chen

Appl. Phys. Lett. 68, 299 (1996); http://dx.doi.org/10.1063/1.116065 (2 pages) | Cited 3 times

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An infrared optical field effect transistor has been developed using a thin film of lead titanate (PbTiO3) deposited on a n/p+ Si substrate by rf sputtering, in which the drain conductance changes in proportion to the infrared light power. A fast response with a rise time of 2.3 μs has been obtained that is about 150% faster than the other types of thermal infrared optical field effect transistor. The developed infrared sensor is a bulk channel field effect transistor structure, that possesses higher mobility. Thus, faster speed can be obtained. In addition, the sensor has been prepared on a Si substrate, which offers the potential to develop Si‐based infrared optical‐electric integrated circuits. © 1996 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors

Applied‐voltage induced fatigue of lithium niobate waveguide

Hirotoshi Nagata, Naoki Mitsugi, Toshihiro Sakamoto, Kazumasa Kiuchi, and Junichiro Ichikawa

Appl. Phys. Lett. 68, 301 (1996); http://dx.doi.org/10.1063/1.116066 (3 pages) | Cited 4 times

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z‐cut lithium niobate optical modulator devices were ac (Vp‐p=20 V) operated at 130 °C with an accumulated dc bias voltage of 4 and 8 V. A consequent dc drift phenomenon was larger for the 8 V bias application. After the operation, inversed domains were found along the Mach–Zehnder waveguides, particularly on the waveguide placed under the hot electrode. The results suggested that the device operation at higher voltage and temperature led to an accelerated dc drift and a fatiguelike deterioration of the lithium niobate material. © 1996 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects

Observation of the quantum confined ground state in InP quantum dots at 300 K

H. Giessen, B. Fluegel, G. Mohs, N. Peyghambarian, J. R. Sprague, O. I. Micic, and A. J. Nozik

Appl. Phys. Lett. 68, 304 (1996); http://dx.doi.org/10.1063/1.116067 (3 pages) | Cited 12 times

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Colloidal suspensions of InP quantum dots (diameters 25 and 35 Å) show steplike absorption spectra which are blue‐shifted by about 1 eV with respect to bulk material. Time resolved femtosecond spectroscopy at room temperature identifies the first quantum confined state. The nonlinear bleaching signal rises within 300 fs and persists longer than 200 ps. © 1996 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.47.-p Spectroscopy of solid state dynamics

Probe‐surface interaction in near‐field optical microscopy: The nonlinear bending force mechanism

M. J. Gregor, P. G. Blome, J. Schöfer, and R. G. Ulbrich

Appl. Phys. Lett. 68, 307 (1996); http://dx.doi.org/10.1063/1.116068 (3 pages) | Cited 66 times

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The probe‐surface interaction underlying the ‘‘shear‐force’’ distance control commonly used in near‐field microscopy has been studied in detail by measuring dither resonance profiles and approach curves in vacuum and liquid helium. Simulations based on a nonlinear oscillator model considering the probe geometry, its elastic properties, adiabatic short‐range probe‐surface contact, and the surface tilt angle, are in excellent agreement with the experiments. We prove conclusively that a nonlinear bending force mechanism with parametric mode conversion is responsible for the observed phenomena. © 1996 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Anomalous second harmonic generation in BaTiO3 thin films

L. D. Rotter, D. L. Kaiser, and M. D. Vaudin

Appl. Phys. Lett. 68, 310 (1996); http://dx.doi.org/10.1063/1.116069 (3 pages) | Cited 17 times

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We present data on second harmonic generation in as‐grown BaTiO3 thin films, including the dependence of the second harmonic intensity on the incidence angle and on the polarization direction of the fundamental beam. The data indicate that the effective second harmonic generation coefficient in these films is unrelated to the crystallographic orientation of the BaTiO3 as determined by x‐ray diffraction. We suggest as an alternative explanation electric‐field‐induced second harmonic generation. © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Dielectric apertures as intracavity lenses in vertical‐cavity lasers

L. A. Coldren, B. J. Thibeault, E. R. Hegblom, G. B. Thompson, and J. W. Scott

Appl. Phys. Lett. 68, 313 (1996); http://dx.doi.org/10.1063/1.116070 (3 pages) | Cited 20 times

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Dielectric current apertures are shown to be effective as intracavity lenses for reduced optical losses in vertical‐cavity lasers. The Gaussian resonator theory is applied to obtain a mode radius, and this is shown to be in good agreement with experiment as well as a recently proposed uniform waveguide model. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Pulse‐time‐modulated electron cyclotron resonance plasma etching with low radio‐frequency substrate bias

Seiji Samukawa

Appl. Phys. Lett. 68, 316 (1996); http://dx.doi.org/10.1063/1.116071 (3 pages) | Cited 30 times

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The etching characteristics of polycrystalline silicon (poly‐Si) by short‐time modulated electron cyclotron resonance (ECR) determined by using a Cl2 etchant were investigated. It was found that the poly‐Si etching rate was improved by increasing the pulse interval of the microwaves to more than 50 μs for a 50% duty ratio and applying a 600 kHz rf bias to the substrate. A large amount of negative chlorine ions are generated in the afterglow which occurs for more than 50 μs in high‐density, low‐pressure plasmas. The low rf bias alternately accelerates both the negative and positive ions to the substrate surface. As a result, the pulse‐time modulated ECR plasma can produce high rate and charge‐free etching with a 600 kHz rf bias. © 1996 American Institute of Physics.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.65.Cf Surface cleaning, etching, patterning

Mechanically induced structural relaxation in an amorphous metallic Fe80B20 alloy

G. J. Fan, M. X. Quan, and Z. Q. Hu

Appl. Phys. Lett. 68, 319 (1996); http://dx.doi.org/10.1063/1.116072 (3 pages) | Cited 13 times

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A melt‐spun metallic Fe80B20 glass was subjected to high‐energy ball milling. Microstructural changes of the glassy sample during milling were characterized by means of x‐ray diffraction, differential scanning calorimetry, Mossbauer spectroscopy, and Curie temperature measurements. It was found that the metallic glass may relax towards a low energetic configuration by mechanical milling, leading to a reduction of the heat release associated with crystallization of the amorphous phase and an increase of the average hyperfine field as well as of the Curie temperature. These results can be attributed to the occurrence of a strong short‐range order in the amorphous state. Our experimental observations suggest that mechanical milling may induce structural relaxation in the amorphous Fe80B20 alloy. © 1996 American Institute of Physics.
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61.43.Fs Glasses
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Fabrication of 3 nm wires using 100 keV electron beam lithography and poly(methyl methacrylate) resist

D. R. S. Cumming, S. Thoms, S. P. Beaumont, and J. M. R. Weaver

Appl. Phys. Lett. 68, 322 (1996); http://dx.doi.org/10.1063/1.116073 (3 pages) | Cited 34 times

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We report the fabrication of 3 nm NiCr wires on a solid silicon substrate. The process uses conventional 100 keV electron beam lithography and poly(methyl methacrylate) resist. The wires consist of short, continuous, lengths of metal that are attached at either end to 20 nm wide wires. Instead of exposing continuous lines in the resist, we blank the beam for several pixels to leave a gap. The resist in the gap is therefore exposed only by the secondary electrons from the neighboring regions that are directly exposed by the beam. The technique is repeatable and we demonstrate that it is possible to make 3 nm features on demand. © 1996 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Nanofabrication of sensors on cantilever probe tips for scanning multiprobe microscopy

K. Luo, Z. Shi, J. Lai, and A. Majumdar

Appl. Phys. Lett. 68, 325 (1996); http://dx.doi.org/10.1063/1.116074 (3 pages) | Cited 37 times

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A simple method for nanofabricating sensors on cantilever probe tips, used in atomic force microscopy (AFM), is described. The method uses voltage pulses to evaporate and create a nanometer‐scale hole at the very end of a metallized AFM cantilever probe tip. The hole in the metal film can be used as a mask for further device fabrication. We demonstrate this by fabricating a nanothermocouple junction on the probe tip. Thermal images of electrically heated patterned metal lines obtained by this probe suggest the spatial resolution to be about 10 nm. Fabrication of nanosensors on probe tips is likely to assist in the future development of scanning multiprobe microscopy. © 1996 American Institute of Physics.
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07.79.Lh Atomic force microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Superlattices of PbZrO3 and PbTiO3 prepared by multi‐ion‐beam sputtering

I. Kanno, S. Hayashi, R. Takayama, and T. Hirao

Appl. Phys. Lett. 68, 328 (1996); http://dx.doi.org/10.1063/1.116705 (3 pages) | Cited 71 times

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Artificial superlattices consisting of antiferroelectric PbZrO3 (PZO) and ferroelectric PbTiO3 (PTO) have been fabricated by a multi‐ion‐beam sputtering technique. The epitaxial PZO and PTO layers were sequentially grown on (100)Pt/MgO substrates at a low substrate temperature of 415 °C with a periodicity from 5 to 100 perovskite unit cells. X‐ray diffraction studies revealed the superlattice structures with a‐axis oriented PTO layers on a‐axis oriented PZO layers. The dielectric and ferroelectric properties of the superlattice films were enhanced with increasing periodicity. © 1996 American Institute of Physics.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.15.Cd Deposition by sputtering

Local amorphous thin‐film crystallization induced by focused electron‐beam irradiation

M. Libera

Appl. Phys. Lett. 68, 331 (1996); http://dx.doi.org/10.1063/1.116706 (3 pages) | Cited 9 times

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Crystallization is induced in amorphous 80 nm films of Ge48Te52 by electron irradiation to produce structures with characteristic dimensions as small as of 10–100 nm. The experiments are performed in a 200 keV field‐emission scanning transmission electron microscope (TEM/STEM) that provides an electron probe about 1–2 nm in diameter (FWHM) with approximately 1 nA of current. When entire films are annealed in the absence of electron irradiation, they crystallize at approximately 450 K. Crystallization occurs under focused‐probe electron irradiation when the average film temperature is as low as 300 K. The local transformation is driven by some combination of electron‐beam heating and radiation‐defect generation. A discussion is presented in the context of related nanocrystallization experiments driven by scanned‐probe techniques for optical data storage applications. © 1996 American Institute of Physics.
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61.43.Dq Amorphous semiconductors, metals, and alloys
64.70.K- Solid-solid transitions

Laser activation of diamond films for electroless metal plating: Valence band modifications

S. M. Pimenov, G. A. Shafeev, and E. N. Loubnin

Appl. Phys. Lett. 68, 334 (1996); http://dx.doi.org/10.1063/1.116707 (3 pages) | Cited 3 times

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Experimental results are presented on the modification of the valence band of diamond under a KrF excimer laser etching in the process of the activation of a diamond film surface for electroless copper plating. The Auger electron spectroscopy (AES) is used to obtain the valence‐band density‐of‐states spectra of the diamond film before and after laser treatment. According to AES data, a characteristic feature of the laser‐treated diamond surface is the appearance of nonzero density of states in the gap of diamond which promotes the electron transfer from the reducing agent to the metal ion during electroless deposition. The results are also discussed on the electroless metallization of diamond films under a load‐induced activation of the film surface with a diamond indentor. © 1996 American Institute of Physics.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.65.-b Surface treatments

Novel symmetry in the growth of gallium nitride on magnesium aluminate substrates

T. George, E. Jacobsohn, W. T. Pike, P. Chang‐Chien, M. A. Khan, J. W. Yang, and S. Mahajan

Appl. Phys. Lett. 68, 337 (1996); http://dx.doi.org/10.1063/1.116708 (3 pages) | Cited 10 times

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The growth of GaN by metalorganic chemical vapor deposition on (111) and (100) magnesium aluminate (MgAl2O4) substrates is examined using transmission electron microscopy. The results indicate that mainly wurtzite GaN is grown for both orientations. On the (111) substrate the following epitaxial relationship is observed: (0001)GaN ∥ (111)MgAl2O4, and [1120]GaN ∥ [110]MgAl2O4. During the early stages of the (100) growth, four orientations of the wurtzite phase and a zinc‐blende phase are formed. With increasing thickness, one of the wurtzite orientations dominates, with the epitaxial relationship being (1101)GaN ∥ (100)MgAl2O4 and the [1120]GaN nearly parallel to [011]MgAl2O4. This choice of growth orientation appears to be determined primarily by the nature of the interfacial bonding, with the basal plane of each of the four wurtzite GaN variants being nearly aligned along one of the four {111} planes intersecting the (100) surface of the MgAl2O4. © 1996 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Structural study of nanocrystallized Cu83Co17 ribbons by scanning friction force microscopy

A. Correia, N. García, J. Massanell, and J. L. Costa‐Krämer

Appl. Phys. Lett. 68, 340 (1996); http://dx.doi.org/10.1063/1.116709 (3 pages) | Cited 2 times

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Nanocrystallized cobalt clusters embedded in a copper matrix exhibiting giant magnetoresistance have been revealed by scanning force and friction microscopy. The microscopic images reported here should be important to understand the magnetic properties of these novel systems. © 1996 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
75.50.Kj Amorphous and quasicrystalline magnetic materials

Trace oxygen effects on copper nanoparticle size and morphology

D. L. Olynick, J. M. Gibson, and R. S. Averback

Appl. Phys. Lett. 68, 343 (1996); http://dx.doi.org/10.1063/1.116710 (3 pages) | Cited 15 times

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Using an ultrahigh vacuum (UHV) magnetron sputtering system connected directly to a UHV transmission electron microscope (TEM), we study, in situ, the effect of trace levels of oxygen contamination on the early stages of sintering, coalescence, and morphology. Whereas, nanoparticles produced under clean conditions experience substantial sintering and grain growth upon contact, even at room temperature, particles deliberately exposed to trace amounts of oxygen remain distinct. It therefore appears difficult to form ultraclean nanophase materials, at least for copper, due to rapid sintering. These systematic studies of particle morphology as a function of oxygen exposure shed light on nanoparticle growth mechanisms in the gas phase and thus ways to approach the ideal nanophase material. © 1996 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization

Nucleation and evolution of misfit dislocations in ZnSe/GaAs (001) heterostructures grown by low‐pressure organometallic vapor phase epitaxy

Sergei Ruvimov, Edith D. Bourret, Jack Washburn, and Zuzanna Liliental‐Weber

Appl. Phys. Lett. 68, 346 (1996); http://dx.doi.org/10.1063/1.116711 (3 pages) | Cited 10 times

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Transmission electron microscopy and x‐ray diffraction were used to study strain relaxation and the evolution of the dislocation structure in ZnSe epilayers grown by low‐pressure organometallic vapor phase epitaxy on a (001) surface of semi‐insulating GaAs. Before the ZnSe growth, the substrate surface was exposed to a flow of tertiarybutylarsine to promote an As‐terminated surface. This surface treatment results in a low density of stacking faults; 60° misfit dislocations were observed at a layer thickness as low as 0.05 μm. This agrees well with the theoretical critical value for misfit dislocation formation in the ZnSe/GaAs system, but is much lower than experimental critical thicknesses reported earlier. Various mechanisms of misfit dislocation generation were observed at different growth stages. The evolution of the dislocation structure is discussed in relation with the morphology of the ZnSe layers. © 1996 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Epitaxial film thickness in the low‐temperature growth of Si(100) by plasma enhanced chemical vapor deposition

W. J. Varhue, J. L. Rogers, P. S. Andry, and E. Adams

Appl. Phys. Lett. 68, 349 (1996); http://dx.doi.org/10.1063/1.116712 (3 pages) | Cited 17 times

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The limiting epitaxial thickness of Si films grown at a low substrate temperature by plasma enhanced chemical vapor deposition has been determined. The specific process used was electron cyclotron resonance plasma deposition. The limiting epitaxial thickness was found to decrease with the ratio of energetic ion‐to‐adatom arrivals on the substrate surface. The measured epitaxial thicknesses are similar to those obtained in previous investigations using molecular beam epitaxy. Hydrogen surface coverage does not appear to be a factor in limiting epitaxial thickness. The maximum epitaxial thickness remains to be determined for this process and substrate temperature range. © 1996 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

A method for fabricating silicon quantum wires based on SiGe/Si heterostructure

J. L. Liu, Y. Shi, F. Wang, Y. Lu, R. Zhang, P. Han, S. L. Gu, and Y. D. Zheng

Appl. Phys. Lett. 68, 352 (1996); http://dx.doi.org/10.1063/1.116713 (3 pages) | Cited 6 times

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A method for fabricating silicon quantum wires with SiO2 boundaries is presented. It is accomplished by first growing Si/SiGe/Si heterostructure on silicon substrate with very low‐pressure chemical vapor deposition, followed by lithography and reactive ion etching to form trench structures. Finally, the selective chemical etching of SiGe over silicon and subsequent thermal oxidation are carried out to generate expected silicon quantum wires. The result observed is demonstrated using scanning electron microscopy. Furthermore, the thermal oxidation characteristics of the silicon wires are investigated. The present method provides a well‐controllable way to fabricate silicon quantum wires and is fully compatible with silicon microelectronic technology. © 1996 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
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