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22 Jan 1996

Volume 68, Issue 4, pp. 435-574

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Metal‐insulator‐semiconductor solar cells with silicon oxynitride tunnel insulator by using rapid thermal processing

A. Beyer, G. Ebest, and R. Reich

Appl. Phys. Lett. 68, 508 (1996); http://dx.doi.org/10.1063/1.116382 (3 pages) | Cited 7 times

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Metal‐insulator‐semiconductor (MIS) solar cells were prepared with silicon oxynitride as tunnel insulator by using rapid thermal processing (RTP). During the reaction of NH3 at the silicon surface the growing of the oxynitride layer was investigated at temperatures up to 950 °C and layer thicknesses up to 2 nm. The elemental composition of the layer was characterized by using Auger electron spectroscopy (AES). Extensive electrical characterizations on MIS tunnel diodes and MIS cells were carried out and an improved thermal stability (up to 350 °C) of the Al‐oxynitride‐silicon system was found in comparison to the conventional silicon oxide as a tunnel insulator up to 270 °C. © 1996 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.60.Jt Photoelectric conversion

Ultrafast transient gain in type II multiple quantum wells

G. Mohs, B. Fluegel, H. Giessen, K. Meissner, G. Khitrova, H. Gibbs, and N. Peyghambarian

Appl. Phys. Lett. 68, 511 (1996); http://dx.doi.org/10.1063/1.116383 (3 pages) | Cited 1 time

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Gain for less than one picosecond is observed in a type II GaAs/AlAs multiple quantum well and compared to a type I multiple quantum well under the same conditions. A sophisticated three‐beam experiment is used to unambiguously determine the internal gain of the samples. This method is capable of measuring very small amounts of gain and applicable to a wide variety of situations. The observations are well explained by a simple carrier scattering model. © 1996 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.66.Fd III-V semiconductors

Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors

M. Asif Khan, Q. Chen, C. J. Sun, J. W. Yang, M. Blasingame, M. S. Shur, and H. Park

Appl. Phys. Lett. 68, 514 (1996); http://dx.doi.org/10.1063/1.116384 (3 pages) | Cited 68 times

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We report on the fabrication and characterization of Al0.1Ga0.9N/GaN heterojunction field effect transistors, both an enhancement mode and a depletion mode with a low pinchoff voltage, suitable for digital integrated circuit applications. For an enhancement mode device with a 1 μm gate length and 5 μm drain‐to‐source separation, the dc transconductance is around 23 mS/mm. Connecting the enhancement mode device as a switching transistor and a depletion mode device as a load, we demonstrate an AlGaN/GaN inverter. © 1996 American Institute of Physics.
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85.30.Tv Field effect devices

High‐efficiency Stark‐geometry photorefractive quantum wells with intrinsic cladding layers

I. Lahiri, María Aguilar, D. D. Nolte, and M. R. Melloch

Appl. Phys. Lett. 68, 517 (1996); http://dx.doi.org/10.1063/1.116385 (3 pages) | Cited 28 times

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Output diffraction efficiencies approaching 40% and input diffraction efficiencies approaching 3% have been achieved in photorefractive p‐i‐n quantum well diodes operating in the longitudinal Stark geometry. The device structure consists of a low‐temperature‐grown multiple quantum well isolated from the doped contacts by an intrinsic standoff layer of Al0.5Ga0.5As. All charge trapping and screening occurs within the quantum wells without the need for trapping in specialized buffer layers used in previous designs. This new design operates at lower voltages (18 V) and lower fields (6 V/μm) than previously demonstrated. © 1996 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.66.Fd III-V semiconductors

Air‐stable Cl‐terminated Ge(111)

Z. H. Lu

Appl. Phys. Lett. 68, 520 (1996); http://dx.doi.org/10.1063/1.116386 (3 pages) | Cited 17 times

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It is shown that an air‐stable Ge(111) surface can be made by wet chemical HCl treatment in ambient atmosphere. X‐ray photoelectron spectroscopy (XPS) and photon electrical field polarization‐dependent Cl K‐edge x‐ray absorption spectroscopy (XANES) were used to study the chemical structure and the physical orientation of chemisorbed Cl. It is found that Cl forms a monovalent bond with the Ge(111) dangling bond (DB) along 〈111〉 surface normal. The stability of HCl‐treated Ge(111) is attributed to the surface DBs being terminated by monochloride. Thermodynamics are found to be the governing force in the Ge–HCl reaction processes. © 1996 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.65.-b Surface treatments

AlGaAs/GaAs light‐emitting diode on a Si substrate with a self‐formed GaAs islands active region grown by droplet epitaxy

Y. Hasegawa, T. Egawa, T. Jimbo, and M. Umeno

Appl. Phys. Lett. 68, 523 (1996); http://dx.doi.org/10.1063/1.116387 (3 pages) | Cited 11 times

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We report the preliminary results on self‐formed GaAs islands grown on the GaAs/Si substrate by metalorganic chemical vapor deposition using droplet epitaxy. Atomic force microscope observation shows that the GaAs islands exhibit a conical shape with heights of 90–170 nm, diameters of 600–750 nm, and densities of 107 cm−2, which are controlled by the trimethylgallium flow rate. In addition, an AlGaAs/GaAs light‐emitting diode (LED) on Si with a self‐formed GaAs island active region was fabricated by the use of this technique. The LED was operated up to 27 μW at 190 mA under direct current conditions at room temperature. © 1996 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Fd III-V semiconductors
85.60.Jb Light-emitting devices

Resonant tunneling properties of single electron transistors with a novel double‐gate geometry

Toshimasa Fujisawa and Seigo Tarucha

Appl. Phys. Lett. 68, 526 (1996); http://dx.doi.org/10.1063/1.116388 (3 pages) | Cited 13 times

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We describe the operation of single electron transistors with a double‐gate geometry defined by Ga focused ion beam implanted in‐plane gates and line Schottky gates. The in‐plane gates are used to squeeze the channel and to increase the charging energy. The Schottky gates are placed on the channel to form the tunnel junctions. Independent control of these gates is useful to define the geometry of single electron transistors. We found strong resonances exhibiting negative differential resistance in the small devices, which is attributed to tunneling through zero‐dimensional states when the barrier has a parabolic‐shaped potential. © 1996 American Institute of Physics.
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85.35.Gv Single electron devices

Hydrogenation of undoped and nitrogen‐doped CdTe grown by molecular beam epitaxy

Zhonghai Yu, S. L. Buczkowski, M. C. Petcu, N. C. Giles, and T. H. Myers

Appl. Phys. Lett. 68, 529 (1996); http://dx.doi.org/10.1063/1.116389 (3 pages) | Cited 18 times

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The effect of atomic hydrogen during the growth of undoped and nitrogen‐doped CdTe by photon‐assisted molecular beam epitaxy was investigated. Hydrogen incorporation is enhanced by the presence of nitrogen. Infrared absorption measurements strongly suggest the formation of N–H complexes. Hall measurements indicate that the complexes are donorlike in nature. Hydrogenation radically changes the low temperature photoluminescence in both undoped and nitrogen‐doped layers. Exciton‐related luminescence is quenched at low temperature. Nitrogen‐related donor‐acceptor pair luminescence is also absent from N‐doped hydrogenated layers, consistent with complex formation. Copper donor–acceptor pair luminescence appears to be enhanced by hydrogen. © 1996 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Unconnected junction contrast in ion beam induced charge microscopy

S. Kolachina, V. K. S. Ong, D. S. H. Chan, J. C. H. Phang, T. Osipowicz, and F. Watt

Appl. Phys. Lett. 68, 532 (1996); http://dx.doi.org/10.1063/1.116390 (3 pages) | Cited 2 times

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A new contrast mechanism in ion beam induced charge imaging in semiconductors is reported. Junctions not directly connected to the charge collection preamplifier were found to give rise to significant charge collection signals. Imaging with these signals is carried out, thus enabling the mapping of junctions not directly connected to the charge collection amplifier. © 1996 American Institute of Physics.
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68.37.-d Microscopy of surfaces, interfaces, and thin films
85.30.De Semiconductor-device characterization, design, and modeling

Electrical isolation in GaAs by light ion irradiation: The role of antisite defects

J. P. de Souza, I. Danilov, and H. Boudinov

Appl. Phys. Lett. 68, 535 (1996); http://dx.doi.org/10.1063/1.116391 (3 pages) | Cited 23 times

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The evolution of the sheet resistance (Rs) in n‐type GaAs layers during ion irradiation was studied using light mass projectiles like proton, deuterium, and helium ions at various energies. For all the cases, at the beginning of the irradiation, Rs increases with the accumulation of the dose. After reaching ≊109 Ω/☒, Rs saturates, forming a plateau. This plateau is succeeded by a decreasing of Rs with the increase of the dose, denoting that conduction via damage‐related mechanisms is taking place. The threshold dose to convert the conductive layer to a highly resistive one at room temperature or at 100 °C is found to scale with the inverse of the estimated number of displaced lattice atoms along the depth of the doped layer. Antisite defects formed by the replacement collisions are invoked to play the major role in isolation formation in GaAs by virtue of their lower sensitivity to dynamic annealing compared to other point defects. © 1996 American Institute of Physics.
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61.80.Jh Ion radiation effects
85.40.Ls Metallization, contacts, interconnects; device isolation

Photothermal measurements on amorphous thin films deposited on crystalline silicon

Antonios Seas, Constantinos Christofides, and Mahendra Munidasa

Appl. Phys. Lett. 68, 538 (1996); http://dx.doi.org/10.1063/1.116392 (3 pages) | Cited 2 times

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Nondestructive photothermal reflectance and radiometric measurements have been performed on amorphous silicon thin films of various thicknesses deposited on crystalline silicon substrate. The influence of the film thickness on the photothermal reflectance and radiometric signals (amplitude and phase) is shown. © 1996 American Institute of Physics.
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68.60.-p Physical properties of thin films, nonelectronic
78.66.Jg Amorphous semiconductors; glasses

Origin of large‐amplitude random telegraph signal in silicon bipolar junction transistors after hot carrier degradation

D. Pogany, A. Chantre, J. A. Chroboczek, and G. Ghibaudo

Appl. Phys. Lett. 68, 541 (1996); http://dx.doi.org/10.1063/1.116393 (3 pages) | Cited 10 times

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The random telegraph signal (RTS) with a relative amplitude of up to 100% has been observed in the forward and reverse base current in polycrystalline emitter bipolar junction transistors after hot carrier degradation. The RTS is explained by modulations in the surface generation‐recombination rate due to fluctuations in the capture cross section of two‐state interface centers. Carrier trapping/emission on slow oxide traps and/or defect reconfiguration are assumed to be responsible for the cross‐section fluctuations © 1996 American Institute of Physics.
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72.70.+m Noise processes and phenomena
85.30.Pq Bipolar transistors

Long‐wavelength SiGe/Si resonant cavity infrared detector using a bonded silicon‐on‐oxide reflector

R. T. Carline, D. J. Robbins, M. B. Stanaway, and W. Y. Leong

Appl. Phys. Lett. 68, 544 (1996); http://dx.doi.org/10.1063/1.116394 (3 pages) | Cited 10 times

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Resonant‐enhanced detection of long wavelength infrared radiation using a SiGe/Si multiquantum well device grown on a bonded silicon‐on‐insulator substrate reflector is reported. A low refractive index in the wavelength region below the 9.2 μm absorption peak in SiO2 gives high Si/SiO2 reflectivities between 7 and 9 μm. Comparison with a control device grown on a p+‐Si substrate shows a fivefold enhancement in the peak responsivity at 7.2 μm, which is the resonant wavelength of the cavity formed between the buried Si/SiO2 and the Si/air interfaces.
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78.66.Li Other semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Photovoltaic cell of carbonaceous film/n‐type silicon

H. A. Yu, Y. Kaneko, S. Yoshimura, and S. Otani

Appl. Phys. Lett. 68, 547 (1996); http://dx.doi.org/10.1063/1.116395 (3 pages) | Cited 25 times

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A photovoltaic cell with carbonaceous thin film/n‐type silicon (C/n‐Si) was fabricated. The carbonaceous thin film was deposited on an n‐type single‐crystal‐silicon substrate by chemical‐vapor deposition of 2,5‐dimethyl‐p‐benzoquinone at 500 °C. Without light irradiation, the photovoltaic cell displayed an almost perfect rectifying current–voltage characteristic. Under illumination of 15 mW cm−2 light with wavelengths between 400 and 800 nm similar to the solar light, it generated 2.73 mA cm−2 of short‐circuit and 325 mV of open‐circuit voltage. With the same light condition, a power conversion efficiency of 3.80% and a fill factor value of 0.65 were achieved. © 1996 American Institute of Physics.
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73.50.Pz Photoconduction and photovoltaic effects
78.66.Qn Polymers; organic compounds
84.60.Jt Photoelectric conversion

Fabrication of 15 nm wide trenches in Si by vacuum scanning tunneling microscope lithography of an organosilane self‐assembled film and reactive ion etching

F. Keith Perkins, Elizabeth A. Dobisz, Susan L. Brandow, Jeffrey M. Calvert, John E. Kosakowski, and Christie R. K. Marrian

Appl. Phys. Lett. 68, 550 (1996); http://dx.doi.org/10.1063/1.116396 (3 pages) | Cited 23 times

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Organosilane precursor molecules, here (aminoethylaminomethyl)phenethyltrimethoxysilane, or PEDA, are chemisorbed onto a Si surface forming a monolayer thick film. These films are patterned using the scanning tunneling microscope to locally modify the chemical reactivity and are then used as a template for selective electroless plating of a thin Ni film. Reactive ion etching in a C2F6/O2 mixture transfers this pattern into the substrate. Improvement over previous lithographic performance is achieved by growing the films on a passivated and lightly oxidized Si surface, optimizing the patterning conditions, and improving the metallization and etch chemistry. In this way, we have generated deep trenches on the order of 15±4 nm width, with edge roughness of 3 nm. We believe this demonstrates the resolution limiting factors of this lithographic process. © 1996 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

CeO2 as insulation layer in high Tc superconducting multilayer and crossover structures

M. A. A. M. van Wijck, M. A. J. Verhoeven, E. M. C. M. Reuvekamp, G. J. Gerritsma, D. H. A. Blank, and H. Rogalla

Appl. Phys. Lett. 68, 553 (1996); http://dx.doi.org/10.1063/1.116397 (3 pages) | Cited 12 times

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We present a study of the electrical properties of insulating CeO2 layers in combination with superconducting (Y/Dy) Ba2Cu3O7−δ (RBCO) films over ramps and in crossover structures. CeO2 is frequently used as a buffer layer, or template layer for biepitaxial grain boundary junctions, but can also be used as an insulating layer in ramp‐type junctions and other multilayer structures. Epitaxial thin films of CeO2 were deposited by pulsed laser ablation using SrTiO3 substrates. We characterized the insulating performance of CeO2 thin films in terms of breakdown field Ebd and the relative dielectric constant ϵr. For 80 nm thick CeO2 at 77 K we found Ebd=1×106 V/cm, using a 1 nA/100 μm2 breakdown criterion, which gives us a specific resistivity of ρ≥109 Ω cm up to breakdown. From capacitance measurements on planar RBCO/CeO2/RBCO structures we obtained for the dielectric constant: ϵr≊15. The texture of CeO2 in combination with RBCO on ramped surfaces, simulated by SrTiO3 (STO) (103) substrates having their normal tilted by 18° away from the STO[001] direction, has been studied by x‐ray diffraction. © 1996 American Institute of Physics.
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73.61.Ng Insulators
74.81.-g Inhomogeneous superconductors and superconducting systems, including electronic inhomogeneities

Growth of nucleation sites on Pb‐doped Bi2Sr2Ca1Cu2O8+δ

D. K. Finnemore, Ming Xu, D. Kouzoudis, T. Bloomer, M. J. Kramer, Stuart McKernan, U. Balachandran, and Pradeep Haldar

Appl. Phys. Lett. 68, 556 (1996); http://dx.doi.org/10.1063/1.116398 (3 pages) | Cited 1 time

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In the growth of Bi2Sr2Ca2Cu3O10+δ from mixed powders of Pb‐doped Bi2Sr2Ca1Cu2O8+δ and other oxides, it has been discovered that a dense array of hillocks or mesas grow at the interface between a Ag overlay and Pb‐doped Bi2Sr2Ca1Cu2O8+δ grains during the ramp up to the reaction temperature. As viewed in an environmental scanning electron microscope, the Ag coated grains develop a texture that looks like ‘‘chicken pox’’ growing on the grains at about 700 °C. These hillocks are about 100 nm across and are spaced at about 500 to 1000 nm. If there is no Ag, this texture does not develop. Preliminary measurements indicate that the hillocks are a recrystallization of (Bi,Pb)2Sr2Ca1Cu2O8+δ, and are definitely not a Pb rich phase. © 1996 American Institute of Physics.
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74.72.-h Cuprate superconductors
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
84.71.Mn Superconducting wires, fibers, and tapes

Growth of epitaxial a‐axis and c‐axis oriented Sr2RuO4 films

S. Madhavan, D. G. Schlom, A. Dabkowski, H. A. Dabkowska, and Ying Liu

Appl. Phys. Lett. 68, 559 (1996); http://dx.doi.org/10.1063/1.116399 (3 pages) | Cited 23 times

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Epitaxial films of Sr2RuO4 have been grown in situ by pulsed laser deposition on (100) LaAlO3 and (100) LaSrGaO4 substrates. X‐ray diffraction results show that the films are single domain and grow c‐axis oriented on (100) LaAlO3 and a‐axis oriented on (100) LaSrGaO4 substrates. X‐ray ϕ scans indicate epitaxial alignment of the film and substrate in‐plane axes in both cases. Resistivity versus temperature measurements reveal that the as‐grown c‐axis oriented films are semiconducting and the a‐axis oriented films are metallic. © 1996 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.15.Fg Pulsed laser ablation deposition

Penetration depth measurements of single‐crystal NbN films at millimeter‐wave region

Bokuji Komiyama, Zhen Wang, and Masayoshi Tonouchi

Appl. Phys. Lett. 68, 562 (1996); http://dx.doi.org/10.1063/1.116400 (2 pages) | Cited 10 times

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The zero temperature penetration depth λ(0) of single‐crystal NbN thin films has been measured at 82 GHz using an open resonator. The NbN films used in this study have a (200) single‐crystal structure and Tc and ρ20 (normal state resistivity at 20 K) are 16 K and 62 mΩ cm, respectively. λ(0) was obtained by applying a least‐squares fit to the change of penetration depth using the BCS theory. We obtain λ(0)=194 nm, which shows good agreement with the calculated value from Tc,ρ20 and Δ(0). © 1996 American Institute of Physics.
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74.25.N- Response to electromagnetic fields
74.25.Op Mixed states, critical fields, and surface sheaths
74.78.-w Superconducting films and low-dimensional structures
85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices

Magnetic disaccommodation in single yttrium iron garnet crystal

L. Torres, M. Zazo, J. Iñiguez, C. de Francisco, J. M. Muñoz, and P. Hernandez

Appl. Phys. Lett. 68, 564 (1996); http://dx.doi.org/10.1063/1.116401 (2 pages) | Cited 4 times

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Measurements of magnetic disaccommodation in single yttrium iron garnet (YIG) crystals are presented. Two peaks of 0.2%–0.3% are observed in the isochronal spectrum around 130 and 250 K. Comparison of our results with those on polycrystalline YIG samples and with similar data on illuminated and gamma ray irradiated single YIG crystal samples is provided. © 1996 American Institute of Physics.
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75.50.Dd Nonmetallic ferromagnetic materials
75.60.Lr Magnetic aftereffects

Reactive ion etching of ferroelectric SrBi2TaxNb2−xO9 thin films

Seshu B. Desu and Wei Pan

Appl. Phys. Lett. 68, 566 (1996); http://dx.doi.org/10.1063/1.116402 (3 pages) | Cited 11 times

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Ferroelectric SrBi2TaxNb2−xO9 thin films were patterned using reactive ion etching. Considering the environmental impact effect, CHClFCF3, a special etching gas, known to be less environmentally hazardous compared to the other hydrofluorocarbons, was employed in this study. The etch rates as a function of etching parameters were investigated. An etch rate of 20 nm/min was obtained. Surface compositional change during etching was monitored by x‐ray photoelectron spectroscopy. Surface residues were removed by a postetching cleaning process. © 1996 American Institute of Physics.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.Cf Surface cleaning, etching, patterning

Surface tension effects in tunneling microscopy

J. F. T. Conroy and Jiri Janata

Appl. Phys. Lett. 68, 569 (1996); http://dx.doi.org/10.1063/1.116403 (3 pages) | Cited 1 time

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Induced electric charge lowers the surface tension of the substrate below the tunneling tip and creates a sharp surface tension gradient in its vicinity. For mercury as the substrate, the random waving is amplified by the gradient of the surface tension, resulting in observable mechanical ‘‘waving’’ of the surface that increases with the applied bias voltage. Its amplitude reaches a minimum at the potential of zero charge. In agreement with the Gibbs–Lippmann equation these effects are mitigated by the presence of adsorbed films but may lead to translocation of adsorbates by the biased tunneling tip. © 1996 American Institute of Physics.
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07.79.Cz Scanning tunneling microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Structural and photocurrent–voltage characteristics of tungsten oxide thin films on p ‐GaAs

Ki Hyun Yoon, Jeong Won Lee, Yong Soo Cho, and Dong Heon Kang

Appl. Phys. Lett. 68, 572 (1996); http://dx.doi.org/10.1063/1.116786 (3 pages) | Cited 9 times

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An n‐type WO3 thin film on a p‐type GaAs substrate has been investigated in terms of its structural, electrical, and photocurrent–voltage characteristics. Crystallization of the monoclinic phases of WO3 occurred at 400 °C as identified by a glancing angle x‐ray diffractometer. Above 400 °C, small traces of gallium oxide (Ga2O3)were observed along with higher intensities of the monoclinic peaks. The formation of Ga2O3 was confirmed by a depth profile analysis using an Auger electron spectrometer. Electrical resistivity measured by the van der Pauw method was influenced by the crystalline nature and the interfacial states induced by the diffused atoms from each side of WO3 and GaAs. A high photocurrent density of 7.5 mA/ cm2 at −1.0 V (vs SCE) appeared at the crystalline WO3 on p‐type GaAs at 400 °C resulting from effective carrier movement through the interfaces. © 1996 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Pz Photoconduction and photovoltaic effects
73.61.Le Other inorganic semiconductors
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