APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

12 Feb 1996

Volume 68, Issue 7, pp. 879-1024

Page 2 of 2 Pages Previous Page | Jump to Page

Low resistance Zn3P2/InP heterostructure Ohmic contact to p‐InP

Moon‐Ho Park, L. C. Wang, J. Y. Cheng, Fei Deng, S. S. Lau, and C. J. Palmstrøm

Appl. Phys. Lett. 68, 952 (1996); http://dx.doi.org/10.1063/1.116109 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
A low resistance Zn/Pd Ohmic contact scheme to p‐InP based on solid phase reactions has been investigated. Contact resistivity in the mid‐10−5 Ω cm−2 could be obtained for contacts with an atomic ratio of Zn to Pd of ∼1.5. In addition to the solid phase regrowth process, a Zn3P2/InP heterojunction is formed at the contact/semiconductor interface. The Ohmic contact formation mechanism is rationalized with the formation of Zn3P2/InP heterojunction. © 1996 American Institute of Physics.
Show PACS
73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts

Anisotropic surface morphology of GaAs (001) surfaces passivated with nitrogen radicals

M. Kasu, T. Makimoto, and N. Kobayashi

Appl. Phys. Lett. 68, 955 (1996); http://dx.doi.org/10.1063/1.116110 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
We have studied GaAs (001) surfaces passivated with nitrogen (N) radicals at submonolayer N coverage mainly using scanning tunneling microscopy and transmission electron microscopy. We determined that GaN‐rich regions are elongated in the [110] direction, suggesting that N passivation proceeds in the [110] direction. This can be explained in terms of minimization of the tensile strains in the [110] direction induced when the supplied N atoms replace first‐layer As atoms on the (2×4) surface. © 1996 American Institute of Physics.
Show PACS
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.65.Rv Passivation

Phonons in self‐assembled (In,Ga,Al)Sb quantum dots

Brian R. Bennett, B. V. Shanabrook, and R. Magno

Appl. Phys. Lett. 68, 958 (1996); http://dx.doi.org/10.1063/1.116111 (3 pages) | Cited 30 times

Full Text: | Download PDF

Show Abstract
Quantum dots of InSb, GaSb, and AlSb were grown on GaAs substrates by molecular beam epitaxy and characterized by atomic force microscopy and Raman spectroscopy. There is a clear correlation between the observation of quantum dots by atomic force microscopy and a phonon mode at an energy a few wavenumbers below the longitudinal optic phonon energy for thick (In,Ga,Al)Sb layers. In the case of nominally AlSb quantum dots, a two‐mode behavior is observed and attributed to the segregation of Ga into the AlSb during growth. © 1996 American Institute of Physics.
Show PACS
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Radiation effects of focused ion beam microfabrication on Ni disilicide thin films by in situ transmission electron microscopy

Miyoko Tanaka, Kazuo Furuya, and Tetsuya Saito

Appl. Phys. Lett. 68, 961 (1996); http://dx.doi.org/10.1063/1.116112 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
Structural changes of epitaxial Ni disilicide thin films on Si(111) were investigated with an in situ transmission electron microscope (TEM) incorporated with a focused ion beam (FIB). Epitaxial growth of NiSi2 on a Si(111) TEM specimen was achieved by the combination of Ni deposition and subsequent annealing. Three different sized squares were microfabricated by 25 keV Ga+‐FIB onto this specimen during TEM observation at room temperature. FIB lithography caused the exfoliation of Ni silicide film along the microfabricated lines and the defects adjacent to the beam incident area. The beam affected area outside of the microfabricated line was about 2–3 μm. © 1996 American Institute of Physics.
Show PACS
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.40.Hp Lithography, masks and pattern transfer

Ultrafast optical sampling pump‐probe measurement of exciton spin relaxation in GaAs/AlGaAs quantum wells

Satoru Adachi, Shojiro Takeyama, Yoshihiro Takagi, Atsushi Tackeuchi, and Shunichi Muto

Appl. Phys. Lett. 68, 964 (1996); http://dx.doi.org/10.1063/1.116113 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Spin dynamics in GaAs/AlGaAs multiple quantum wells at room temperature are studied in subpicosecond to nanosecond time region by using the optical sampling nondegenerate pump‐probe technique. Polarization‐dependent absorption signals resonant to the light‐hole (lh) exciton revealed the subpicosecond spin relaxation time which was several tens of times shorter than that of the heavy‐hole (hh) exciton. Resonant pumping to lh and probing at hh exhibited no spin dependence within the time resolution, showing the spin memory being washed out completely during the energy relaxation from lh to hh. © 1996 American Institute of Physics.
Show PACS
78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors

Monolithic vacuum–solid‐state photodetector

Marko Jalonen, Mervi Koskinen, and Markus Pessa

Appl. Phys. Lett. 68, 967 (1996); http://dx.doi.org/10.1063/1.116114 (3 pages)

Full Text: | Download PDF

Show Abstract
We report on a monolithic microvacuum GaAs/AlGaAs photodetector which is suggested to form a basic building block for a novel large‐area and low noise detector. The rudimentary structure consists of a Cs‐coated p‐GaAs photon absorption layer, a vacuum space, and a collector. Part of the photoelectrons generated in the absorption layer are emitted into vacuum inside the microstructure and accelerated across a 2‐μm wide vacuum space by an applied electric field to be collected by a conductive GaAs substrate. The quantum efficiency of this detector was about 0.07% at the incident 676‐nm light power of 0.28 mW. The detector exhibited a low dark current of 1 pA at the reverse bias of 10 V. © 1996 American Institute of Physics.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)

Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films

W. Rieger, T. Metzger, H. Angerer, R. Dimitrov, O. Ambacher, and M. Stutzmann

Appl. Phys. Lett. 68, 970 (1996); http://dx.doi.org/10.1063/1.116115 (3 pages) | Cited 111 times

Full Text: | Download PDF

Show Abstract
The influence of biaxial stress on the optical properties of thin GaN films is studied by x‐ray diffraction and Raman and photoluminescence spectroscopy. The stress is caused by differences in the thermal expansion coefficient and lattice mismatch between the film and c‐plane sapphire substrates. In particular, the influence of various thicknesses of AlN buffer layers on the strain in GaN films is studied. GaN/AlN films were deposited by low pressure metal organic chemical vapor deposition using triethylgallium and tritertbutylaluminum and ammonia. We observe a pronounced reduction of strain in the GaN films with increasing buffer thickness: An AlN buffer layer thicker than 200 nm eliminates the stress completely. Estimates of the linear coefficient for the near band gap luminescence shift due to biaxial compressive strain yield a value of 24 meV/GPa. © 1996 American Institute of Physics.
Show PACS
78.66.Fd III-V semiconductors

A 10 μm GaAs/AlxGa1−xAs intersubband photodetector operating at zero bias voltage

C. Schönbein, H. Schneider, G. Bihlmann, K. Schwarz, and P. Koidl

Appl. Phys. Lett. 68, 973 (1996); http://dx.doi.org/10.1063/1.116116 (3 pages) | Cited 14 times

Full Text: | Download PDF

Show Abstract
We report on a GaAs/AlxGa1−xAs quantum well intersubband photodetector for the long wavelength infrared region, which operates at zero bias voltage. Detection without bias is achieved by using an asymmetrical barrier structure as well as modulation doping, giving rise to a built‐in field across the barrier layers. The maximum of the spectral response is centered at 10 μm with a spectral bandwidth of 1.6 μm and a 77 K peak detectivity of 2.5×109 cm√Hz/W at 0 V. © 1996 American Institute of Physics.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Selective growth of gallium nitride layers with a rectangular cross‐sectional shape and stimulated emission from the optical waveguides observed by photopumping

Toshiaki Tanaka, Kenji Uchida, Akiyoshi Watanabe, and Shigekazu Minagawa

Appl. Phys. Lett. 68, 976 (1996); http://dx.doi.org/10.1063/1.116117 (3 pages) | Cited 26 times

Full Text: | Download PDF

Show Abstract
Selective growth of GaN layers on sapphire substrates is investigated for low‐loss optical waveguide structures of active and passive photonic devices. When growth conditions, such as nitridation of the substrate surface and growth temperature, are adjusted to achieve high‐density uniform nucleation on the substrate, we found that the cross‐sectional shape of GaN waveguides has a rectangular structure with smooth top and side surfaces. At 77 K, we observed stimulated emission from the cleaved facet of an optically pumped selectively grown GaN waveguide with a width of 6 μm and a cavity length of 800 μm. Line narrowing was also achieved: with the full width at half‐maximum of the emission spectra decreasing from 11 to 2 nm by increasing a pump power density from 0.013 to 0.05 MW/cm2. © 1996 American Institute of Physics.
Show PACS
78.45.+h Stimulated emission
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Excited states in self‐organized InAs/GaAs quantum dots: Theory and experiment

M. Grundmann, N. N. Ledentsov, O. Stier, D. Bimberg, V. M. Ustinov, P. S. Kop’ev, and Zh. I. Alferov

Appl. Phys. Lett. 68, 979 (1996); http://dx.doi.org/10.1063/1.116118 (3 pages) | Cited 112 times

Full Text: | Download PDF

Show Abstract
In photoluminescence spectra of nanometer‐scale pyramidal‐shaped InAs/GaAs quantum dots allowed optical transitions involving excited hole states are revealed in addition to the ground state transition. Detailed theoretical calculations of the electronic structure, including strain, piezoelectric and excitonic effects, agree with the experimental data and lead to unambiguous assignment of the transitions. © 1996 American Institute of Physics.
Show PACS
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Removal of hydrogen from the base of carbon‐doped In0.49Ga0.51P/GaAs heterojunction bipolar transistors by ex situ annealing and the effects on device characteristics

Q. J. Hartmann, H. Hwangbo, A. Yung, D. A. Ahmari, M. T. Fresina, J. E. Baker, and G. E. Stillman

Appl. Phys. Lett. 68, 982 (1996); http://dx.doi.org/10.1063/1.116119 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
The effects of ex situ high temperature annealing (T≳500 °C) on the hole and hydrogen concentration of the base and on the dc device characteristics of InGaP/GaAs heterojunction bipolar transistors grown by low‐pressure metalorganic chemical vapor deposition have been studied. Using rapid thermal annealing, hydrogen can be completely annealed out of the base, activating the carbon acceptors. Due to the low diffusivity of carbon, the high temperatures necessary to remove most of the hydrogen do not degrade the device characteristics. Using this simple technique to eliminate hydrogen from the base prior to device fabrication should improve the reliability of GaAs‐based transistors with a carbon‐doped base. Results also indicate that unlike carbon‐doped In0.53Ga0.47As, hydrogen does not significantly affect the minority carrier characteristics of carbon‐doped GaAs. © 1996 American Institute of Physics.
Show PACS
61.72.uj III-V and II-VI semiconductors
85.30.Pq Bipolar transistors

InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon‐doped base grown by organometallic chemical vapor deposition

R. Bhat, W‐P. Hong, C. Caneau, M. A. Koza, C‐K. Nguyen, and S. Goswami

Appl. Phys. Lett. 68, 985 (1996); http://dx.doi.org/10.1063/1.116120 (3 pages) | Cited 19 times

Full Text: | Download PDF

Show Abstract
InP/GaAsSb double heterojunction bipolar transistors (DHBTs) may be an attractive alternative to InP/InGaAs DHBTs, since estimates of the band alignment indicate that it is ideal for fabricating n‐p‐n DHBTs. We have demonstrated the first organometallic chemical vapor deposition grown InP/GaAsSb DHBTs, with carbon‐doped bases having an ft and fmax of 30 and 45 GHz, respectively. © 1996 American Institute of Physics.
Show PACS
85.30.Pq Bipolar transistors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Near‐field optical spectroscopy of single quantum wires

T. D. Harris, D. Gershoni, R. D. Grober, L. Pfeiffer, K. West, and N. Chand

Appl. Phys. Lett. 68, 988 (1996); http://dx.doi.org/10.1063/1.116121 (3 pages) | Cited 48 times

Full Text: | Download PDF

Show Abstract
Low temperature near‐field scanning optical microscopy is used for spectroscopic studies of single, nanometer dimension, cleaved edge overgrown quantum wires. A direct experimental comparison between a two dimensional system and a single genuinely one dimensional quantum wire system, inaccessible to conventional far field optical spectroscopy, is enabled by the enhanced spatial resolution. We show that the photoluminescence of a single quantum wire is easily distinguished from that of the surrounding quantum well. Emission from localized centers is shown to dominate the photoluminescence from both wires and wells at low temperatures. A factor of 3 absorption enhancement for these wires compared to the wells is concluded from the photoluminescence excitation data. © 1996 American Institute of Physics.
Show PACS
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
78.55.Cr III-V semiconductors

InAs self‐assembled quantum dots on InP by molecular beam epitaxy

S. Fafard, Z. Wasilewski, J. McCaffrey, S. Raymond, and S. Charbonneau

Appl. Phys. Lett. 68, 991 (1996); http://dx.doi.org/10.1063/1.116122 (3 pages) | Cited 79 times

Full Text: | Download PDF

Show Abstract
We present results of room temperature photoluminescence (PL) emission from a 0‐dimensional system in the ∼1.4 to ∼1.7 μm spectral region. Molecular beam epitaxy was used to grow InAs self‐assembled quantum dots in AlInAs on an InP substrate. Preliminary characterizations have been performed using PL and transmission electron microscopy. The low temperatures PL spectra also display excited state emission and state filling as the excitation intensity is increased. © 1996 American Institute of Physics.
Show PACS
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Influence of mole fraction on normal incidence bound‐free absorption in p‐doped InxGa1−xAs/GaAs strained quantum wells

M. Tadić and Z. Ikonić

Appl. Phys. Lett. 68, 994 (1996); http://dx.doi.org/10.1063/1.116123 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
Bound‐free absorption in strained InxGa1−xAs/GaAs p‐doped quantum wells is calculated for various values of the mole fraction x. The position dependence of Luttinger parameters is taken into account. Values of absorption exceeding those in unstrained structures by a factor of 2 are found. Also, it is shown that in symmetric structures it suffices to calculate the wave functions of only one block of the Luttinger‐Kohn Hamiltonian. © 1996 American Institute of Physics.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors

Luminescence quenching in erbium‐doped hydrogenated amorphous silicon

Jung H. Shin, R. Serna, G. N. van den Hoven, A. Polman, W. G. J. H. M. van Sark, and A. M. Vredenberg

Appl. Phys. Lett. 68, 997 (1996); http://dx.doi.org/10.1063/1.116124 (3 pages) | Cited 48 times

Full Text: | Download PDF

Show Abstract
Hydrogenated amorphous silicon thin films are doped with erbium by ion implantation. Room‐temperature photoluminescence at 1.54 μm, due to an intra‐4f transition in Er4+, is observed after thermal annealing at 300–400 °C. Excitation of Er3+ is shown to be mediated by photocarriers. The Er3+ luminescence intensity is quenched by a factor of 15 as the temperature is raised from 10 K to room temperature. Codoping with oxygen (1 at. %) reduces the luminescence quenching to a factor of 7. The quenching is well correlated with a decrease in luminescence lifetime, indicating that nonradiative decay of excited Er3+ is the dominant quenching mechanism as the temperature is increased. © 1996 American Institute of Physics.
Show PACS
71.55.Jv Disordered structures; amorphous and glassy solids
78.55.Hx Other solid inorganic materials

In situ preparation of epitaxial TlBa2Ca2Cu3O9 high‐Tc thin films

N. Reschauer, U. Spreitzer, W. Brozio, A. Piehler, K. F. Renk, R. Berger, and G. Saemann‐Ischenko

Appl. Phys. Lett. 68, 1000 (1996); http://dx.doi.org/10.1063/1.116208 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
We report an in situ growth of epitaxial TlBa2Ca2Cu3O9 high‐Tc thin films. The films (thickness 80–400 nm) were prepared on LaAlO3 (100) substrates by laser ablation from a thallium‐free BaCaCuO target in the presence of Tl2O vapor. X‐ray diffraction patterns of θ–2θ scans showed that the films consisted of highly oriented TlBa2Ca2Cu3O9 with the c axis perpendicular to the substrate surface, and ϕ scan measurements indicated epitaxial growth. Scanning electron microscope and atomic force microscope investigations showed smooth surfaces without platelike structures. The films had transition temperatures near 100 K. © 1996 American Institute of Physics.
Show PACS
74.78.-w Superconducting films and low-dimensional structures
81.15.Fg Pulsed laser ablation deposition

Microwave intermodulation products and excess critical current in YBa2Cu3O7−x Josephson junctions

T. C. L. Gerhard Sollner, Jay P. Sage, and Daniel E. Oates

Appl. Phys. Lett. 68, 1003 (1996); http://dx.doi.org/10.1063/1.116209 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
Third‐order intermodulation power generated by a Josephson junction in an YBa2Cu3O7−x microwave resonator is measured and compared to a calculation based on the resistively shunted junction model. The results agree with junction parameters determined by power‐dependent loss measurements on the same resonator at temperatures near the transition temperature TC, but measurements below TC/2 suggest that excess critical current, which does not contribute to the nonlinear properties of the junction, occurs at lower temperatures. Local heating is suggested to explain this feature. These results are relevant to the coupled‐grain model used to describe microwave properties of high‐TC superconductors and to the understanding of Josephson junctions in these materials. © 1996 American Institute of Physics.
Show PACS
74.50.+r Tunneling phenomena; Josephson effects
85.25.Cp Josephson devices

Superconductivity and transport behavior of laser ablated Au‐added YBa2Cu3O7−δ thin films

R. Pinto, P. R. Apte, M. S. R. Rao, Ramesh Chandra, C. P. D’Souza, S. P. Pai, L. C. Gupta, R. Vijayaraghavan, K. I. Gnanasekar, and M. Sharon

Appl. Phys. Lett. 68, 1006 (1996); http://dx.doi.org/10.1063/1.116210 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
We report here a systematic investigation of superconducting properties of Au‐added YBa2Cu3O7−δ (YBCO) thin films in situ grown by pulsed laser ablation method. Films are highly c‐axis oriented while the corresponding bulk samples contain multiphases. The superconducting transition temperature Tc of films remains close to 90 K even for large concentration of Au (up to 10% by weight) and the critical current denisty Jc is about 5×106 A cm−2 at 77 K (in self‐field) with higher reproducibility when compared with that of undoped films of YBCO on 〈100〉 LaAlO3. Preliminary investigations indicate that Au gets rejected by the grains and dopes the grain boundaries thus improving the stability of the boundaries and hence of the films. Our result also demonstrates that pulsed laser deposition can be used to grow films of compounds that generally do not form as a single phase in bulk by the conventional solid state methods and hence offers unique possibilities in terms of exploring structure‐property relationships in thin films. © 1996 American Institute of Physics.
Show PACS
74.78.-w Superconducting films and low-dimensional structures
81.15.Fg Pulsed laser ablation deposition

Conductance–voltage characteristics of interfaces between YBa2Cu3O7 and metallic oxides

L. Antognazza, K. Char, and T. H. Geballe

Appl. Phys. Lett. 68, 1009 (1996); http://dx.doi.org/10.1063/1.116211 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
We present the conductance–voltage characteristics of interfaces between YBa2Cu3O7 and three conductive metallic oxides; CaRuO3, SrRuO3, and La0.5Sr0.5CoO3. In the case of all the YBa2Cu3O7/(Ca,Sr)RuO3 interfaces, we observe the zero bias conductance peaks with the increasing conductance background at high bias. The zero bias conductance peaks decrease with increasing temperature and disappear at temperatures between 30 and 40 K. However, we did not observe zero bias anomalies in the YBCO/La0.5Sr0.5CoO3 contacts, in spite of an interface resistance of similar magnitude. This work suggests that the origin of the zero bias conductance peak lies in the defects on the YBCO surface and the exact defect structure depends on the adjacent epitaxial material. © 1996 American Institute of Physics.
Show PACS
74.50.+r Tunneling phenomena; Josephson effects
85.25.Cp Josephson devices

Aging effects of the microstructure and soft magnetic properties in an amorphous Fe–Si–B–Nb alloy

T. Naohara

Appl. Phys. Lett. 68, 1012 (1996); http://dx.doi.org/10.1063/1.116212 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
The aging behavior of an amorphous Fe79Si6B10Nb5 alloy was investigated using differential scanning calorimetry, transmission electron microscopy, and soft magnetic measurements. The formation of a bcc‐Fe phase with nanoscale grains was caused by aging for 3.6 ks at the first crystallization temperature; however, this alloy consisted of an amorphous phase after aging for 0.6 Ms below 623 K. A marked increase in the effective permeability was achieved upon such low‐temperature aging, and these values reached 10 000 and 2700 at 1 kHz and 1 MHz, respectively. It was inferred that the origin of the improvement in the soft magnetic properties is closely related to the phase separation in the amorphous structure, which precedes the nanocrystallization. © 1996 American Institute of Physics.
Show PACS
75.50.Bb Fe and its alloys
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.60.-d Domain effects, magnetization curves, and hysteresis

Resistivity reduction and chemical stabilization of organometallic chemical vapor deposited titanium nitride by nitrogen rf plasma

M. Danek, M. Liao, J. Tseng, K. Littau, D. Saigal, H. Zhang, R. Mosely, and M. Eizenberg

Appl. Phys. Lett. 68, 1015 (1996); http://dx.doi.org/10.1063/1.116213 (2 pages) | Cited 21 times

Full Text: | Download PDF

Show Abstract
In situ, nitrogen rf plasma treatment of organometallic chemical vapor deposited (OMCVD) TiN, synthesized by thermal decomposition of tetrakis(dimethylamido) titanium, yielded films with low resistivity and enhanced chemical stability. A sequential OMCVD‐plasma treatment process allowed deposition of films with bulk resistivity as low as 400 μΩ cm. The nitridation resulted in reduction of the carbon concentration in the films, and crystallization of TiN. The composition and electrical properties of the nitridized films were found to be stable upon air exposure. The films possess excellent step coverage (≳70% in 0.35 μm device structures with aspect ratio ∼3) and low defect density (∼0.06 cm−2 for defect size ≥0.2 μm). © 1996 American Institute of Physics.
Show PACS
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation

Chemical vapor deposition of copper with a new metalorganic source

E. S. Choi, S. K. Park, H. K. Shin, and Hong H. Lee

Appl. Phys. Lett. 68, 1017 (1996); http://dx.doi.org/10.1063/1.116214 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
Copper deposition based on a newly synthesized metalorganic compound shows promise for reproducible deposition which has been a major problem. The deposition can be carried out without adverse effect on the film qualities at the bubbler temperature of 65 °C. Preliminary deposition results reveal that the resistivity is 2.5 μΩ cm in the deposition temperature range between 175 and 200 °C. Unlike (hfac)Cu⋅VTMS, the resistivity increases with increasing deposition temperature due to loose packing of the grains at higher temperatures. © 1996 American Institute of Physics.
Show PACS
81.05.Bx Metals, semimetals, and alloys
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Preparation of CuCl microcrystals‐doped SiO2 glass by co‐sputtering method

Seiichi Takami, Yasuyuki Egashira, Itaru Honma, and Hiroshi Komiyama

Appl. Phys. Lett. 68, 1020 (1996); http://dx.doi.org/10.1063/1.116215 (2 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
CuCl microcrystals‐doped SiO2 glass is prepared by the co‐sputtering method using extremely pure CuCl source materials as well as a pure SiO2 target. Low temperature optical absorption spectra (2 K) show the shift of the Z1,2 as well as the Z3 exciton peaks, indicating that the mean radius of the microcrystals is about 5.8 nm. © 1996 American Institute of Physics.
Show PACS
81.05.Pj Glass-based composites, vitroceramics
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Microcontact printing and pattern transfer using trichlorosilanes on oxide substrates

Pamela M. St. John and H. G. Craighead

Appl. Phys. Lett. 68, 1022 (1996); http://dx.doi.org/10.1063/1.116216 (3 pages) | Cited 38 times

Full Text: | Download PDF

Show Abstract
Microcontact printing was used to pattern silicon, aluminum, and titanium substrates using octadecyltrichlorosilane as the ink and an elastomer as the stamp. Patterns were transferred into the substrates using both dry and wet etching. The Al and Ti were etched using an electron cyclotron resonance (ECR) plasma source at low ion energies and low pressure. Silicon was etched in HF to remove the native oxide, followed by KOH. Microcontact printing using OTS ink is a convenient and easy way to pattern both semiconductor and metal surfaces without the extended use of photolithography. © 1996 American Institute of Physics.
Show PACS
85.40.Hp Lithography, masks and pattern transfer
Page 2 of 2 Pages Previous Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close