APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

19 Feb 1996

Volume 68, Issue 8, pp. 1031-1169

Page 1 of 2 Pages Next Page | Jump to Page

Hydrogen passivation of visible p‐i‐n type thin‐film light‐emitting diodes

Jong‐Wook Lee and Koeng Su Lim

Appl. Phys. Lett. 68, 1031 (1996); http://dx.doi.org/10.1063/1.116238 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
The effects of hydrogen passivation on the performance of visible p‐i‐n thin‐film light‐emitting diodes (TFLEDs) have been investigated. The TFLEDs were fabricated using a photochemical vapor deposition method. The hydrogenation process was performed using an inductively coupled plasma system at a rf power of 800 W and a process pressure of 20 mTorr for 30 min. It was found that hydrogenation dramatically improved the performance of these TFLEDs. The threshold voltage was decreased by about 1 V, the electroluminescence (EL) peak shifted from 704.5 to 689 nm, the EL intensity increased by a factor of 3, and the brightness increased from 1 to 24 cd/m2 by 24 times. © 1996 American Institute of Physics.
Show PACS
81.65.Rv Passivation
85.60.Jb Light-emitting devices

Laser focused atomic deposition: A new lithography tool

R. E. Behringer, Vasant Natarajan, and G. Timp

Appl. Phys. Lett. 68, 1034 (1996); http://dx.doi.org/10.1063/1.116239 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
We have used the force exerted on a neutral atom by an optical standing wave to focus a neutral atomic beam into a grating structure that is deposited on a substrate. We have made gratings with pitch of 294 nm, linewidths of δ=40–45 nm and contrast ≳10:1, over an area of 7.6 mm2. We discuss the conditions needed to make the narrowest structures, and how these conditions affect the performance of this technique as a lithography tool. We also show depositions that have lower resolution, δ≊80 nm, but could cover an area greater than 3×104 mm2. © 1996 American Institute of Physics.
Show PACS
07.77.-n Atomic, molecular, and charged-particle sources and detectors
33.80.-b Photon interactions with molecules
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Polarization‐insensitive wavelength filters by birefringence compensation of vertical couplers

R. J. Deri, M. A. Emanuel, F. G. Patterson, S. P. Dijaili, and L. T. Nguyen

Appl. Phys. Lett. 68, 1037 (1996); http://dx.doi.org/10.1063/1.116240 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
We demonstrate a novel birefringence compensation technique to reduce the polarization dependence of AlGaAs directional coupler wavelength filters operating in the 770 to 970 nm wavelength range. By using a multiple quantum well structure to compensate intrinsic waveguide birefringence, we fabricated vertical coupler filters with polarization‐dependent wavelength shifts from 0.1 to 2 nm, significantly less than those achieved for conventional devices. Experimental results show that both the filter wavelength and insertion loss can be rendered polarization insensitive by this technique. © 1996 American Institute of Physics.
Show PACS
42.79.Ci Filters, zone plates, and polarizers
78.66.Fd III-V semiconductors

Photoinduced molecular alignment relaxation in poled electro‐optic polymer thin films

Yongqiang Shi, David J. Olson, James H. Bechtel, Srinath Kalluri, William H. Steier, Wenshen Wang, Datong Chen, and Harold R. Fetterman

Appl. Phys. Lett. 68, 1040 (1996); http://dx.doi.org/10.1063/1.116241 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
The photoinduced nonlinearity decay in poled nonlinear optical polymer, polyurethane/Disperse Red 19, films was studied at wavelengths from 543 to 1320 nm. Electro‐optic gratings and waveguide modulators were used in measuring and monitoring material’s nonlinearity. No photoinduced nonlinearity decay was detected at near infrared wavelengths. However, the photoinduced relaxation rate increased approximately 5 orders of magnitude from 670 to 543 nm, as the excitation wavelength approaches π‐π∗ transition of the chromophores. The photoinduced chromophore reorientation was identified as the dominant relaxation mechanism. © 1996 American Institute of Physics.
Show PACS
42.65.-k Nonlinear optics
42.70.Jk Polymers and organics

Enhancing discharge uniformity in a multi‐kilowatt radio frequency excited CO2 slab laser array

J. D. Strohschein, W. D. Bilida, H. J. J. Seguin, and C. E. Capjack

Appl. Phys. Lett. 68, 1043 (1996); http://dx.doi.org/10.1063/1.116242 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
A computational model is reported which is able to accurately predict discharge uniformity in large‐area electrodes for transverse rf‐excited CO2 lasers. The model has been employed in the development of a multi‐kW radial slab array. Shunt inductors are resonated directly with the discharge impedance, thereby achieving excellent discharge uniformity while eliminating the need for frequency stabilized power sources. Experimental results suggest the model will generally be of major assistance in optimizing large‐area electrodes designs, and specifically in scaling slab laser systems to multi‐kW levels. © 1996 American Institute of Physics.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.-v Laser optical systems: design and operation

A primary x‐ray investigation of the turning of ferroelectric microspheres contained in electrorheological fluids under a direct current electric field

Weijia Wen and Kunquan Lu

Appl. Phys. Lett. 68, 1046 (1996); http://dx.doi.org/10.1063/1.116243 (2 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
An x‐ray diffraction method is introduced to probe the turning of ferroelectric singlecrystal microspheres suspended in electrorheological (ER) fluids. The microspheres used in the experiment have their permanent dipoles polarized in the same direction. Our initial results show that the x‐ray diffraction amplitude in some crystal planes will increase when a fixed dc electric field is applied to the ER fluids. We argue that the enhancement of the diffraction is due to the reorientation of the crystal planes which is caused by the turning of the permanent dipoles in the ferroelectric microspheres under an external electric field. The particle turning has not attracted much attention in the past. We propose that further work should be performed. © 1996 American Institute of Physics.
Show PACS
83.60.Np Effects of electric and magnetic fields
83.80.Gv Electro- and magnetorheological fluids

ArF and KrF excimer laser deposition of yttria‐stabilized zirconia on Si(100)

J. C. Delgado, F. Sánchez, R. Aguiar, Y. Maniette, C. Ferrater, and M. Varela

Appl. Phys. Lett. 68, 1048 (1996); http://dx.doi.org/10.1063/1.116244 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
Yittria‐stabilized zirconia films have been deposited on Si(100) substrates by ArF (193 nm) and KrF (248 nm) laser ablation. By using KrF radiation, high‐quality (h00) epitaxial films are obtained on bare silicon. Epitaxy, although with slightly worse properties, is also obtained on substrates covered with a native oxide. Films have been deposited by ArF laser ablation over a wide range of substrate temperature and oxygen partial pressure and with variation in substrate surface cleaning. These films are polycrystalline and texture or epitaxy have not been obtained in any case. These results reveal that laser wavelength is a crucial factor in determining film properties. © 1996 American Institute of Physics.
Show PACS
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.15.Fg Pulsed laser ablation deposition

Electron–phonon interactions in solid C60 studied by transient picosecond Raman spectroscopy

K. T. Tsen, E. D. Grann, S. Guha, and J. Menendez

Appl. Phys. Lett. 68, 1051 (1996); http://dx.doi.org/10.1063/1.116245 (3 pages)

Full Text: | Download PDF

Show Abstract
Electron–phonon interactions in solid C60 have been studied by transient Raman spectroscopy on a picosecond time scale. The electrons were photoinjected into the triply‐degenerate states of solid C60 by an ultrashort laser pulse of photon energy ℏω=2.14 eV. These energetic electrons relax by emitting various phonons. By monitoring the phonon occupations at very low temperatures with anti‐Stokes Raman scattering, direct information about the relative strength of the electron–phonon interactions in solid C60 was obtained. Our experimental results demonstrate that electrons interact much more strongly with the low‐frequency radial Ag mode than the other phonon modes in solid C60. © 1996 American Institute of Physics.
Show PACS
63.20.K- Phonon interactions
78.30.Na Fullerenes and related materials
78.47.-p Spectroscopy of solid state dynamics

Microstructure, friction, and wear characteristics of the as‐deposited and carbon ion‐implanted diamond films

Richard L. C. Wu, A. K. Rai, and Kazuhisa Miyoshi

Appl. Phys. Lett. 68, 1054 (1996); http://dx.doi.org/10.1063/1.116246 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
The microstructure, friction and wear characteristics of the as‐deposited and carbon ion (160 keV, 6.7×1017 ions/cm2) implanted polycrystalline diamond films grown by plasma‐enhanced chemical vapor deposition were studied. Cross sectional transmission electron microscopy revealed the amorphous nature of the ion bombarded film. Raman peaks of the ion‐implanted film are found to be consistent with the noncrystalline carbon. The pin‐on‐disk technique was used to determine the friction and wear characteristics of the diamond films in an ultrahigh vacuum (10−7 Pa) at room temperature. Compared to the as‐deposited film, considerable reduction in friction and wear of the ion‐implanted film was observed. © 1996 American Institute of Physics.
Show PACS
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
61.72.uf Ge and Si
62.20.Qp Friction, tribology, and hardness

Experimental determination of a time–temperature‐transformation diagram of the undercooled Zr41.2Ti13.8Cu12.5Ni10.0Be22.5 alloy using the containerless electrostatic levitation processing technique

Y. J. Kim, R. Busch, W. L. Johnson, A. J. Rulison, and W. K. Rhim

Appl. Phys. Lett. 68, 1057 (1996); http://dx.doi.org/10.1063/1.116247 (3 pages) | Cited 73 times

Full Text: | Download PDF

Show Abstract
High temperature high vacuum electrostatic levitation was used to determine the complete time–temperature–transformation (TTT) diagram of the Zr41.2Ti13.8Cu12.5Ni10.0Be22.5 bulk metallic glass forming alloy in the undercooled liquid state. This is the first report of experimental data on the crystallization kinetics of a metallic system covering the entire temperature range of the undercooled melt down to the glass transition temperature. The measured TTT diagram exhibits the expected ‘‘C’’ shape. Existing models that assume polymorphic crystallization cannot satisfactorily explain the experimentally obtained TTT diagram. This originates from the complex crystallization mechanisms that occur in this bulk glass‐forming system, involving large composition fluctuations prior to crystallization as well as phase separation in the undercooled liquid state below 800 K. © 1996 American Institute of Physics.
Show PACS
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
81.30.Bx Phase diagrams of metals, alloys, and oxides

Size and volume distributions of thermally induced stress voids in AlCu metallization

Srdjan Kordic, Jan Engel, and Rob A. M. Wolters

Appl. Phys. Lett. 68, 1060 (1996); http://dx.doi.org/10.1063/1.115712 (3 pages)

Full Text: | Download PDF

Show Abstract
AlCu integrated circuit interconnect lines are stressed at 200 °C for a variable duration of time. The number of stress voids and the total void volume are measured. The number of voids saturates between 0.1 and 1 day of stress, and reaches a constant value. The total void volume continues to rise and saturates between 30 and 100 days of stress at 200 °C. Measurements also show that the void volume and the penetration length of the voids into the lines have a log‐normal distribution. © 1996 American Institute of Physics.
Show PACS
61.72.Cc Kinetics of defect formation and annealing
61.72.Qq Microscopic defects (voids, inclusions, etc.)
85.40.Ls Metallization, contacts, interconnects; device isolation

Deformation of sapphire induced by a spherical indentation on the (1010) plane

R. Nowak, T. Sekino, S. Maruno, and K. Niihara

Appl. Phys. Lett. 68, 1063 (1996); http://dx.doi.org/10.1063/1.115713 (3 pages) | Cited 26 times

Full Text: | Download PDF

Show Abstract
This work clarifies the origin of the characteristic discontinuities registered during the deformation of the (1010) plane of sapphire, by means of depth sensing indentation experiments with a spherical indenter. The sudden increase of the plasticity of the crystal was found to be caused by a twinning process. The calculation and analysis of the distribution of resolved shear stresses under a spherical indenter predicted the features of the surface deformation. The high resolution microscopic examination of the residual impressions confirmed the theoretical prediction. © 1996 American Institute of Physics.
Show PACS
62.20.-x Mechanical properties of solids

Behavior of electromigration‐induced gaps in a layered Al line observed by in situ sideview transmission electron microscopy

H. Okabayashi, H. Kitamura, M. Komatsu, and H. Mori

Appl. Phys. Lett. 68, 1066 (1996); http://dx.doi.org/10.1063/1.115714 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
We observed the detailed behavior of electromigration‐induced gaps (voids that cause an open circuit) in a submicron‐wide Al line layered on a Ti/TiN conductor by in situ sideview transmission electron microscopy. Two types of gaps were observed. The first type is characterized by extensive growth, which may make the Ti/TiN shunt ineffective under use conditions. The gap causes a decrease in the Al drift velocity upstream in the electron flow. This decrease probably results from mass transport through the exposed TiN surface into the gap. The second type of gap did not grow and later healed; therefore, the shunt seems to be effective. The gap had little influence on the drift velocity. Mass was transported directly from the cathode‐side Al segment through the gap to the anode‐side segment. These mass transport processes may be the causes of resistance oscillation in layered lines. © 1996 American Institute of Physics.
Show PACS
61.72.Qq Microscopic defects (voids, inclusions, etc.)
66.30.Qa Electromigration
85.40.Ls Metallization, contacts, interconnects; device isolation

Epitaxial growth of highly conductive RuO2 thin films on (100) Si

Q. X. Jia, S. G. Song, X. D. Wu, J. H. Cho, S. R. Foltyn, A. T. Findikoglu, and J. L. Smith

Appl. Phys. Lett. 68, 1069 (1996); http://dx.doi.org/10.1063/1.115715 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
Conductive RuO2 thin films have been heteroepitaxially grown by pulsed laser deposition on Si substrates with yttria‐stabilized zirconia (YSZ) buffer layers. The RuO2 thin films deposited under optimized processing conditions are a‐axis oriented normal to the Si substrate surface with a high degree of in‐plane alignment with the major axes of the (100) Si substrate. Cross‐sectional transmission electron microscopy analysis on the RuO2/YSZ/Si multilayer shows an atomically sharp interface between the RuO2 and the YSZ. Electrical measurements show that the crystalline RuO2 thin films are metallic over a temperature range from 4.2 to 300 K and are highly conductive with a room‐temperature resistivity of 37±2 μΩ cm. The residual resistance ratio (R300 K/R4.2 K) above 5 for our RuO2 thin films is the highest ever reported for such films on Si substrates. © 1996 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
73.61.-r Electrical properties of specific thin films
81.15.Fg Pulsed laser ablation deposition

Interface inequivalence of the InP/InAlAs/InP staggered double heterostructure grown by metalorganic chemical vapor deposition

J. Böhrer, A. Krost, R. Heitz, F. Heinrichsdorff, L. Eckey, D. Bimberg, and H. Cerva

Appl. Phys. Lett. 68, 1072 (1996); http://dx.doi.org/10.1063/1.115716 (3 pages) | Cited 15 times

Full Text: | Download PDF


See Also: Erratum

Show Abstract
The optical and structural properties of the normal InAlAs on InP and the inverted InP on the InAlAs staggered band lineup interface grown by metalorganic chemical vapor deposition (MOCVD) are compared by use of transmission electron microscopy (TEM), time integrated, and time resolved photoluminescence. TEM images show that both interfaces are dissimilar. The normal interface is very abrupt. The inverted interface shows an additional graded layer of about 2.5 nm in width of In1−xAlxAsyP1−y with x (0.48–0) and y (1.0–0.0). A large optical anisotropy exists because of the inequivalence of the two interfaces. The larger spatial separation of the carriers at the inverted interface is responsible for a smaller overlap of the electron and hole wave functions and for that reason a one order of magnitude longer e‐h luminescence decay time of 45 ns is observed. The normal interface transition shifts approximately to the third root of excitation while the inverted interface transition shifts logarithmically. © 1996 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Influence of nitrogen additions on hot‐filament chemical vapor deposition of diamond

S. Bohr, R. Haubner, and B. Lux

Appl. Phys. Lett. 68, 1075 (1996); http://dx.doi.org/10.1063/1.115717 (3 pages) | Cited 52 times

Full Text: | Download PDF

Show Abstract
The influence of N2 additions (5%–40% N2/CH4) on various features of hot‐filament chemical vapor deposition (CVD) of diamond layers is presented and discussed using experimental results and calculations of the thermodynamic equilibrium. Small N2 additions (5%–10% N2/CH4) improved the diamond phase purity but led surprisingly either to an increase or decrease of the growth rate depending upon the filament temperature. The effects are attributed to a reduction of carbon supersaturation due to an abstraction of adsorbed hydrogen atoms caused by CN and HCN. Higher N2 additions (20%–40% N2/CH4) revealed a deterioration of the diamond phase purity and reversal growth rates. These results are probably caused by a beginning reconstruction of the diamond surface which is originated from enhanced abstraction of adsorbed hydrogen and the inefficiency of CN or nitrogen species to stabilize the diamond surface structure. © 1996 American Institute of Physics.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Raman spectra of polyparaphenylene‐based carbon prepared at low heat‐treatment temperatures

M. J. Matthews, X. X. Bi, M. S. Dresselhaus, M. Endo, and T. Takahashi

Appl. Phys. Lett. 68, 1078 (1996); http://dx.doi.org/10.1063/1.115718 (3 pages) | Cited 14 times

Full Text: | Download PDF

Show Abstract
Raman spectroscopy was used to characterize the structural development of polyparaphenylene (PPP) based carbon at various heat treatment temperatures (THT), with an emphasis on the low THT regime. Experimental data show that PPP‐based carbons undergo a smooth transiiton from a mostly PPP polymer‐type structure for heat treatments below ∼750 °C to a graphitized structure at a heat treatment temperature of 2700 °C. These results give insight into the unusually high specific capacities observed in lithium‐PPP systems which are of particular interest for application to Li ion battery technology. © 1996 American Institute of Physics.
Show PACS
61.43.-j Disordered solids
61.72.up Other materials
78.35.+c Brillouin and Rayleigh scattering; other light scattering
82.47.-a Applied electrochemistry

Photoemission assignments of HxSiO4−x fragments at the Si/SiOx interface

Sunghee Lee, Mark M. Banaszak Holl, Wei Hsiu Hung, and F. R. McFeely

Appl. Phys. Lett. 68, 1081 (1996); http://dx.doi.org/10.1063/1.115719 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
Hydrogenation of the silicon/silicon oxide interface is shown to cause changes in every feature spectroscopically discernible by soft x‐ray photoemission in addition to depinning the Fermi level. A new feature is observed to grow in at 3.6 eV with respect to bulk Si upon exposure to atomic hydrogen at the expense of interface states intermediate between 3.6 and 0 eV. Assignments of photoemission features are discussed in the context of previous model studies of the interface and issues of electronic versus chemical reversibility are discussed. © 1996 American Institute of Physics.
Show PACS
73.20.Hb Impurity and defect levels; energy states of adsorbed species
79.60.Jv Interfaces; heterostructures; nanostructures

Metal–semiconductor junctions on p‐type strained Si1−xGex layers

O. Nur, M. Willander, R. Turan, M. R. Sardela, and G. V. Hansson

Appl. Phys. Lett. 68, 1084 (1996); http://dx.doi.org/10.1063/1.115720 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
The electrical properties of Schottky junctions on high‐quality p‐type strained Si1−xGex layers have been studied for Ge fractions 0≤x≤0.24. A multicrystal high‐resolution x‐ray diffractometer was used to investigate the sample’s quality and the strain state and to accurately determine the Ge fraction in the fabricated devices. Several different metals, having a wide range of barrier heights, were used to reach conclusions on the variation of barrier height with the Ge content in the grown strained Si1−xGex layers. It has been found that the Schottky barrier height decreases with increasing Ge fraction in the Si1−xGex layer for the different metals investigated. The change in the barrier height with x has been found to be directly correlated to the valence band discontinuity in the Si/Si1−xGex heterojunction. © 1996 American Institute of Physics.
Show PACS
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Cg Contact resistance, contact potential

Lateral inhomogeneity in InGaAs–GaAs quantum wire arrays by selective‐area metalorganic chemical vapor deposition

M. L. Osowski, R. Panepucci, D. A. Turnbull, S. Q. Gu, A. M. Jones, S. G. Bishop, I. Adesida, and J. J. Coleman

Appl. Phys. Lett. 68, 1087 (1996); http://dx.doi.org/10.1063/1.115721 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
We present an experimental characterization of InGaAs–GaAs quantum wire arrays grown by selective‐area metalorganic chemical vapor deposition (MOCVD). The wire patterns studied were obtained by high‐resolution electron‐beam lithography on poly(methylmethacrylate) and wet etching of silicon dioxide. We observe a large nonlinear enhancement of growth inside the wire region. In addition, the results of gas phase diffusion growth simulations on the expected inhomogeneity of the fabricated quantum wires are presented. The degree of inhomogeneity of fabricated quantum wire arrays was studied by spatially resolved photoluminescence. Our results show that a suitable patterning technique, coupled with proper growth conditions, could allow control of the selective growth profile across the wire array. © 1996 American Institute of Physics.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Highly efficient electroluminescence of new wide band gap ladder‐type poly(para‐phenylenes)

S. Tasch, A. Niko, G. Leising, and U. Scherf

Appl. Phys. Lett. 68, 1090 (1996); http://dx.doi.org/10.1063/1.115722 (3 pages) | Cited 117 times

Full Text: | Download PDF

Show Abstract
We present the optical and electronic properties of a polymeric semiconductor, a new soluble stable ladder‐type poly(para‐phenylene) (LPPP, band gap=2.69 eV) and demonstrate its excellent applicability in blue‐green electroluminescence (EL) devices. The high intrachain order and the low defect concentration of the polymer lead to a remarkably low absorption coefficient in the subgap region (αmin<12 cm−1 at 1.5 eV) and also to a high photoluminescence quantum efficiency (30% in the solid state). The current/electric field characteristics of the high efficiency (up to 0.04 photons/electron) EL devices reveal a polymer film thickness dependence on the required onset field due to ordering effects in the active polymer layer. The shape of the recorded EL spectra can be controlled by the applied electric field in the blue‐green spectral range. © 1996 American Institute of Physics.
Show PACS
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds

Femtosecond dynamics of the optical Stark effect in semiconductor‐doped glass

Sérgio Tsuda and Carlos H. Brito Cruz

Appl. Phys. Lett. 68, 1093 (1996); http://dx.doi.org/10.1063/1.115723 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
We report the observation of the optical Stark shift in CdSxSe1−x semiconductor‐doped glass excited under nonresonant below gap condition and probed with femtosecond optical pulses. An ultrafast and pure light‐induced shift of the band edge is observed. The measured dependence of the band edge shift with the pump pulse peak intensity is linear for pump intensities up to 0.3 GW/cm2. Above this value, departure from linearity is observed. For a pump intensity of 3 GW/cm2, the band shifts by 11 meV. The response of the shift tracks the profile of the pumping pulse. © 1996 American Institute of Physics.
Show PACS
78.55.Hx Other solid inorganic materials
78.66.Sq Composite materials

Suppression of current through an Esaki–Tsu GaAs/AlAs superlattice by millimeter wave irradiation

E. Schomburg, A. A. Ignatov, J. Grenzer, K. F. Renk, D. G. Pavel’ev, Yu. Koschurinov, B. Ja. Melzer, S. Ivanov, S. Schaposchnikov, and P. S. Kop’ev

Appl. Phys. Lett. 68, 1096 (1996); http://dx.doi.org/10.1063/1.115724 (3 pages) | Cited 23 times

Full Text: | Download PDF

Show Abstract
We report the observation of suppression of the dc current through an Esaki–Tsu GaAs/AlAs superlattice (that shows a negative differential conductance due to Bloch oscillations of miniband electrons) caused by irradiation with millimeter wave radiation (frequency 78 GHz). A theoretical analysis of the dc current indicated that the high‐frequency electric current followed the high‐frequency field with a response time smaller than the period (∼10−11 s) of the field. Our experiment, with the superlattice at room temperature, demonstrates that the Esaki–Tsu superlattice is suitable for ultrafast millimeter wave detection and other high‐frequency applications. © 1996 American Institute of Physics.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Gk Tunneling

Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy

M. Passlack, M. Hong, and J. P. Mannaerts

Appl. Phys. Lett. 68, 1099 (1996); http://dx.doi.org/10.1063/1.115725 (3 pages) | Cited 108 times

Full Text: | Download PDF

Show Abstract
Interface properties of Ga2O3–GaAs structures fabricated using in situ multiple‐chamber molecular beam epitaxy have been investigated. The oxide films were deposited on clean, atomically ordered (100) GaAs surfaces at ≂600 °C by electron‐beam evaporation using a Gd3Ga5O12 single‐crystal source. Metal–insulator–semiconductor structures have been fabricated in order to characterize the Ga2O3–GaAs interface by capacitance–voltage measurements in quasistatic mode and at frequencies between 100 Hz and 1 MHz. The formation of inversion layers in both n and p‐type GaAs has been clearly established. Using the quasistatic/high frequency technique, the interface state density has been derived as a function of band gap energy and a midgap interface state density in the mid 1010 cm−2 eV−1 range has been inferred. Charge trapping in the oxide has been revealed as the dominant trapping mechanism. © 1996 American Institute of Physics.
Show PACS
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Electrical detection of electron nuclear double resonance in silicon

B. Stich, S. Greulich‐Weber, and J.‐M. Spaeth

Appl. Phys. Lett. 68, 1102 (1996); http://dx.doi.org/10.1063/1.115726 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
Electrical detection of electron nuclear double resonance (EDENDOR) is demonstrated using shallow P donors in silicon. The EDENDOR spectra are compared with conventional ENDOR spectra. With EDENDOR, both the 31P hyperfine as well as 29Si superhyperfine interactions could be resolved. The sensitivity of EDENDOR seems higher compared to conventional ENDOR, especially for the 29Si ligands. EDENDOR is particularly suitable for the study of the microscopic structure of point defects in semiconductors, especially for detection of paramagnetic centers that are present in low concentrations and in small volumes. © 1996 American Institute of Physics.
Show PACS
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
76.70.Dx Electron-nuclear double resonance (ENDOR), electron double resonance (ELDOR)
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close