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26 Feb 1996

Volume 68, Issue 9, pp. 1177-1303

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Optical behavior of alpha‐C:N films

X. Wang and P. J. Martin

Appl. Phys. Lett. 68, 1177 (1996); http://dx.doi.org/10.1063/1.115960 (3 pages) | Cited 23 times

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The refractive index n, extinction coefficient k, and optical band gap Eopt of nitrogen incorporated amorphous carbon films α‐C:N have been investigated by spectroscopic ellipsometry. The effect of the incorporated nitrogen on the bonding configuration of carbon atoms has been discussed in term of the optical behavior of the films. The results show that nitrogen incorporation into the films stabilizes the tetrahedral bonds of carbon atoms, resulting in lower values of both n and k. However, if the nitrogen incorporation is accomplished by means of excessive N+ ion bombardment, the formed α‐C:N films possess zero gap and are more ‘‘graphitelike.’’ © 1996 American Institute of Physics.
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78.66.Jg Amorphous semiconductors; glasses
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Highly efficient phase conjugation using spatially nondegenerate four‐wave mixing in a broad‐area laser diode

Peter Kürz, Ron Nagar, and Takaaki Mukai

Appl. Phys. Lett. 68, 1180 (1996); http://dx.doi.org/10.1063/1.115961 (3 pages) | Cited 6 times

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We report spatially nondegenerate four‐wave mixing in a broad‐area laser diode that acts as a fast phase conjugate mirror with nanosecond response times and high efficiencies. Phase conjugate reflectivities were found to depend strongly on the bias current of the broad‐area laser diode. Operating the laser diode in an injection‐locked regime above the lasing threshold gave phase conjugate reflectivities as high as 165%. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Comparison of quasi‐phase‐matching geometries for second‐harmonic generation in poled polymer channel waveguides at 1.5 μm

M. Jäger, G. I. Stegeman, W. Brinker, S. Yilmaz, S. Bauer, W. H. G. Horsthuis, and G. R. Möhlmann

Appl. Phys. Lett. 68, 1183 (1996); http://dx.doi.org/10.1063/1.115962 (3 pages) | Cited 32 times

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We have investigated three different quasi‐phase‐matching approaches to second‐harmonic generation (SHG) in DANS (4‐dimethylamino‐4′‐nitrostilbene) poled polymer channel waveguides at 1.5 μm. Periodic photobleaching and periodically poled electrodes deposited directly on the film produced unacceptably high propagation losses. However, periodic electrodes on the substrate gave low losses and useful SHG. © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Jk Polymers and organics

Modulation bandwidth of high‐power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes

I. E. Berishev, A. Yu. Gorbachev, V. A. Mishournyi, N. D. Ilyinskaya, A. L. Stankevich, and I. S. Tarasov

Appl. Phys. Lett. 68, 1186 (1996); http://dx.doi.org/10.1063/1.115963 (3 pages) | Cited 1 time

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The construction of a high power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diode with reduced values of parasitic capacitance has been proposed and investigated. This design uses a 3.5 μm thick polyimide layer in the current confinement regions of the buried laser. The active area of the laser is surrounded by semiconductor material and the entire structure was grown by liquid phase epitaxy. Lasers with λ=1.3 μm and resonator lengths of 310, 450, and 560 μm exhibited modulation bandwidths of 8.7, 9.2, and 6.6 GHz at operating powers of 41, 72, and 91 mW, respectively. Lasers with λ=0.8 μm and a 600 μm resonator showed a 5.6 GHz modulation bandwidth at an output power of 98 mW. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Visible photoluminescence from Ge nanocrystal embedded into a SiO2 matrix fabricated by atmospheric pressure chemical vapor deposition

Achyut Kumar Dutta

Appl. Phys. Lett. 68, 1189 (1996); http://dx.doi.org/10.1063/1.115964 (3 pages) | Cited 77 times

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Stable blue photoluminescence (PL) at 580 nm visible to the naked eye has been observed for the samples consisting of Ge nanocrystals (nc‐Ge) embedded in a silicon oxide (SiO2) solid matrix, fabricated by atmospheric pressure chemical vapor deposition techniques. Raman spectroscopy measurement strongly suggests the existence of Ge nanocrystal in the SiO2 matrices. The size of nc‐Ge is dependent on aftergrowth thermal treatment under nitrogen ambient, and it is found that temperature above 700 °C for 1 h only exhibits the PL peak at the visible wavelength. The samples annealed for longer times at 700 °C do not exhibit any PL peak which is correlated with the change of the nanocrystal size. © 1996 American Institute of Physics.
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78.55.Ap Elemental semiconductors
78.66.Jg Amorphous semiconductors; glasses

White organic electroluminescence devices

R. H. Jordan, A. Dodabalapur, M. Strukelj, and T. M. Miller

Appl. Phys. Lett. 68, 1192 (1996); http://dx.doi.org/10.1063/1.115965 (3 pages) | Cited 96 times

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Thin film organic electroluminescent devices are described which employ a blue‐emitting species as a layer sandwiched between the hole transporter bis(triphenyl)diamine and the light emitting electron transporter tris(8‐hydroxyquinoline)aluminum to obtain bright (≳4700 cd/ m2) efficient (0.5 lm/W) white emission. © 1996 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
85.60.Jb Light-emitting devices

Criterion for selecting phonons and local vibrations involved in the nonradiative relaxation of photoexcited Cr4+ ions in forsterite

S. G. Demos, Dana M. Calistru, and R. R. Alfano

Appl. Phys. Lett. 68, 1195 (1996); http://dx.doi.org/10.1063/1.115966 (3 pages) | Cited 4 times

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The energy of Cr4+ local modes and the energy and dynamics of Mg2SiO4 phonon modes involved in the nonradiative relaxation of photoexcited impurity Cr4+ ions in forsterite crystal were measured. The experimental results suggest that resonance in energy between local vibrations of the impurity ion and lattice (phonon) modes of the host crystal plays a crucial role in selecting the phonons which participate in the nonradiative relaxation of the photoexcited ions in crystals. © 1996 American Institute of Physics.
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63.20.kp Phonon-defect interactions
71.55.Ht Other nonmetals
78.47.-p Spectroscopy of solid state dynamics
78.55.Hx Other solid inorganic materials

1/f noise as an early indicator of electromigration damage in thin metal films

K. Dagge, W. Frank, A. Seeger, and H. Stoll

Appl. Phys. Lett. 68, 1198 (1996); http://dx.doi.org/10.1063/1.115967 (3 pages) | Cited 18 times

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Electromigration in thin films of aluminium and aluminium alloys is shown to lead to stepwise increases of the electrical 1/f noise. These are attributed to the generation of highly mobile defect configurations by a nucleation‐and‐growth process. It is conjectured that among them may be the defects that are responsible for the eventual failure of VLSI electronic devices by electromigration damage. 1/f noise promises to be an early indicator of this damage. © 1996 American Institute of Physics.
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66.30.Qa Electromigration
72.70.+m Noise processes and phenomena
85.40.Qx Microcircuit quality, noise, performance, and failure analysis

Boron‐compensation effect on hydrogenated amorphous silicon with oxygen and nitrogen impurities

Masao Isomura, Toshihiro Kinoshita, and Shinya Tsuda

Appl. Phys. Lett. 68, 1201 (1996); http://dx.doi.org/10.1063/1.115968 (3 pages) | Cited 4 times

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Oxygen and nitrogen impurities increase the dark conductivity of hydrogenated amorphous silicon (a‐Si:H), due to their donorlike behavior. An appropriate amount of boron doping recovers these values to the original ones unless the effect of band gap widening appears. The midgap absorption spectra of the compensated a‐Si:H are identical to those of intrinsic a‐Si:H both at initial and light‐soaked states. The major effect of the oxygen and nitrogen is the creation of donors, which show a similar behavior to those by phosphorus—only a small fraction of the oxygen and nitrogen produces donors, the rest is included in the a‐Si:H network without causing any other significant effect until alloying effects appear. © 1996 American Institute of Physics.
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61.72.uf Ge and Si
71.55.Cn Elemental semiconductors

Growth of 6H–SiC on 6H–SiC(0001) by migration enhanced epitaxy controlled to an atomic level using surface superstructures

Andreas Fissel, Ute Kaiser, Kay Pfennighaus, Bernd Schröter, and Wolfgang Richter

Appl. Phys. Lett. 68, 1204 (1996); http://dx.doi.org/10.1063/1.115969 (3 pages) | Cited 18 times

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Epitaxial growth of 6H–SiC on 6H–SiC(0001) via two‐dimensional nucleation was realized at 930 °C by solid‐source molecular beam epitaxy using the alternate supply of Si and C. The deposition was controlled to an atomic level by surface superstructures. The growth was started on the (√3×√3)R30° surface which turns into the (1×1) phase upon deposition of about 1 monolayer silicon and recurs after subsequent deposition of about 1 monolayer carbon. Deviations from the monolayer deposition and, moreover, growth around substrate related defects result in the deposition of 3C–SiC. © 1996 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Transmission electron microscopy investigation of tin sub‐oxide nucleation upon SnO2 deposition on silicon

Claude Alfonso, Ahmed Charaï, Aldo Armigliato, and Dario Narducci

Appl. Phys. Lett. 68, 1207 (1996); http://dx.doi.org/10.1063/1.115970 (2 pages) | Cited 15 times

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Transmission electron microscopy analysis of tin dioxide films grown by aerosol‐assisted chemical vapor deposition onto oxidized or etched silicon displayed the formation of a sub‐oxide phase that was identified as Sn2O3. Such a phase is observed to disappear upon heat treatment, and is believed to be one of the factors responsible for the instability of tin dioxide films used as gas sensing layers. © 1996 American Institute of Physics.
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68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Synthesis and ferroelectric properties of c‐axis oriented Bi4Ti3O12 thin films by sol‐gel process on platinum coated silicon

Haoshuang Gu, Anxiang Kuang, Shimin Wang, Dinghua Bao, Lianshan Wang, Jianshe Liu, and Xingjiao Li

Appl. Phys. Lett. 68, 1209 (1996); http://dx.doi.org/10.1063/1.115971 (2 pages) | Cited 15 times

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c‐axis oriented Bi4Ti3O12films have been prepared on Pt/Ti/Si(111) substrates by sol‐gel process. Crack‐free films of 0.5 μm thickness were fabricated using a multilayer spinning technique and calcination at 600 °C for 30 min. The average grain size of the film is about 0.15 μm. The film exhibits ferroelectric hysteresis with remanent polarization Pr=4.8 μc/cm2 and coercive field Ec=70 kV/cm. The measured dielectric constant and loss factor at a frequency of 100 kHz are 170 and 0.02 respectively. © 1996 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Structure and hardness studies of CNx/TiN nanocomposite coatings

Dong Li, Xi‐Wei Lin, Shang‐Cong Cheng, Vinayak P. Dravid, Yip‐Wah Chung, Ming‐Show Wong, and William D. Sproul

Appl. Phys. Lett. 68, 1211 (1996); http://dx.doi.org/10.1063/1.115972 (3 pages) | Cited 61 times

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Crystalline CNx/TiN multilayer composite coatings have been synthesized using an opposed cathode unbalanced magnetron sputtering system. Electron microscopy studies showed that the CNx/TiN coatings were fully crystalline and dense at small bilayer thicknesses. An amorphous phase was formed when the CNx layer thickness exceeded 4–5 nm. Two new d spacings extracted by Fourier transform of digitized images of the crystalline CNx region cannot be matched by known compounds formed by the detected elements. This provides limited evidence for the possible formation of a new carbon–nitrogen compound. Nanoindentation hardness about 45–55 GPa was reproducibly achieved for coatings produced under low nitrogen partial pressure and high substrate bias (−150 to −250 V). TiN (111) preferred orientation was strongly correlated to the high coating hardness. © 1996 American Institute of Physics.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.15.Cd Deposition by sputtering

Role of ion energy in determination of the sp3 fraction of ion beam deposited carbon films

E. Grossman, G. D. Lempert, J. Kulik, D. Marton, J. W. Rabalais, and Y. Lifshitz

Appl. Phys. Lett. 68, 1214 (1996); http://dx.doi.org/10.1063/1.115973 (3 pages) | Cited 44 times

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The role of ion energy over the range 5 eV≤E≤20 keV in the production of the dense diamondlike sp3‐bonded phase of carbon films deposited from ion beams has been investigated. Films with a significant sp3 component (≳40%), as determined by electron energy loss spectroscopy (EELS), can be formed over the wide energy region 30 eV≤E≤10 keV at room temperature. The sp3 fraction is completely suppressed only for E≤10 eV or E≥20 keV. For both cases, this suppression is associated with a sharp increase of the surface roughness, as determined by atomic force microscopy (AFM). The different nature of the mechanisms responsible for the suppression of sp3 bonding in both the low and high energy regions is discussed. © 1996 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.15.Fg Pulsed laser ablation deposition

Birefringence and tilted modes in ordered GaInP/AlGaInP waveguides and lasers

A. Moritz, R. Wirth, C. Geng, F. Scholz, and A. Hangleiter

Appl. Phys. Lett. 68, 1217 (1996); http://dx.doi.org/10.1063/1.115974 (3 pages) | Cited 13 times

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We have studied the influence of chemical ordering on the properties of GaInP/AlGaInP optical waveguide structures and lasers. We have observed mode‐conversion between transverse electric (TE) and transverse magnetic (TM) modes within typically 60 μm. We show that an ordering‐induced birefringence with the optical axis tilted with respect to the growth direction is responsible for the coupling of the TE and TM modes. A new linear combination of TE and TM modes, the ‘‘super modes,’’ can propagate in the waveguide without change. We show that these super modes govern the polarization of lasers made from ordered material. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
78.66.Fd III-V semiconductors

Homoepitaxial diamond films with large terraces

Kazushi Hayashi, Sadanori Yamanaka, Hideyo Okushi, and Koji Kajimura

Appl. Phys. Lett. 68, 1220 (1996); http://dx.doi.org/10.1063/1.115932 (3 pages) | Cited 31 times

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High‐quality homoepitaxial diamond films having large terrace width have been successfully grown on (001) diamond substrates. Schottky contact properties as well as the surface morphology and the film crystallinity of the deposited films were characterized in order to examine a potential for electronic applications. It is found that the diamond films are covered with macroscopic steps running parallel to [110] direction and have atomically flat surfaces with 2×1 and 1×2 double‐domain structure. Detailed analysis of the atomic force microscope image for the atomically flat region indicates that the terrace width for double atomic steps is around 50 nm, suggesting that the migration length of precursors under present condition is much longer than that previously reported. The current–voltage characteristics of Al–Schottky contacts to these diamond films show excellent rectification properties. © 1996 American Institute of Physics.
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68.55.-a Thin film structure and morphology
73.30.+y Surface double layers, Schottky barriers, and work functions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Ultrafast optical pump THz‐probe spectroscopy on silicon

Jürgen Zielbauer and Martin Wegener

Appl. Phys. Lett. 68, 1223 (1996); http://dx.doi.org/10.1063/1.115933 (3 pages) | Cited 14 times

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We investigate the dynamics of photoexcited carriers in silicon after interband excitation with optical femtosecond pulses by probing intraband transitions with time‐delayed THz pulses. The experimental data at various temperatures are compared with numerical, self‐consistent solutions of the intraband polarization and Maxwell’s equations. In addition, we deduce the carrier scattering rate from the comparison between experiment and theory. © 1996 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.47.-p Spectroscopy of solid state dynamics

Pressure‐enhanced interdiffusion in amorphous Si/Ge multilayers

Steven D. Theiss, Frans Spaepen, and Michael J. Aziz

Appl. Phys. Lett. 68, 1226 (1996); http://dx.doi.org/10.1063/1.115934 (3 pages) | Cited 9 times

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We have investigated the effect of hydrostatic pressure on interdiffusion in multilayers composed of alternating layers of amorphous Si (2.7 nm) and Ge (3.1 nm). Samples were annealed at 420 °C at pressures between 0 and 2.8 GPa in an externally heated diamond anvil cell. Interdiffusion was measured by monitoring the decay with annealing time of the intensity of the first‐order x‐ray reflection resulting from the effects of composition modulation. The decay curves for all pressures could be made to coincide by scaling the annealing times. This made it possible to separate the effects of pressure on the interdiffusivity from those of composition and structural relaxation. The interdiffusivity increased with applied pressure, with an activation volume of −5.0 cm3/mole, or −0.42 times the atomic volume of crystalline Si. © 1996 American Institute of Physics.
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62.50.-p High-pressure effects in solids and liquids
66.30.Ny Chemical interdiffusion; diffusion barriers

Outdiffusion of impurity atoms from silicon crystals and its dependence upon the annealing atmosphere

Lei Zhong, Yoshio Kirino, Yoshiaki Matsushita, Yoshiro Aiba, Kenro Hayashi, Ryuji Takeda, Hiroshi Shirai, Hiroyoki Saito, Junichi Matsushita, and Jun Yoshikawa

Appl. Phys. Lett. 68, 1229 (1996); http://dx.doi.org/10.1063/1.115935 (3 pages) | Cited 5 times

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The outdiffusion of boron, antimony, and phosphorus from the bare silicon wafer at 1200 °C, especially its dependence upon the annealing atmosphere, has been studied with spreading resistance and secondary ion mass spectroscopy (SIMS). It is found that the boron outdiffusion proceeds when the crystal is annealed in hydrogen, but is completely suppressed in argon even if the doping concentration is as high as 3×1018 cm−3 and the annealing time is as long as 2 h. The dramatic dependence upon the atmosphere has not been observed for the other impurities and is temporarily related with the desorption process of boron atoms from the surface. © 1996 American Institute of Physics.
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61.72.uf Ge and Si
66.30.J- Diffusion of impurities

Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation

Thomas Lauinger, Jan Schmidt, Armin G. Aberle, and Rudolf Hezel

Appl. Phys. Lett. 68, 1232 (1996); http://dx.doi.org/10.1063/1.115936 (3 pages) | Cited 103 times

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Outstanding surface passivation of low‐resistivity single‐crystalline p‐silicon is reported using silicon nitride fabricated at low temperature (375 °C) in a remote plasma‐enhanced chemical vapor deposition system. The effective surface recombination velocity Seff is determined as a function of the bulk injection level from light‐biased photoconductance decay measurements. On polished as well as chemically textured silicon wafers we find that our remote plasma silicon nitride provides better surface passivation than the best high‐temperature thermal oxides ever reported. For polished 1.5 and 0.7 Ω cm p‐silicon wafers, record low Seff values of 4 and 20 cm/s, respectively, are presented. © 1996 American Institute of Physics.
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73.20.-r Electron states at surfaces and interfaces
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
81.65.Rv Passivation

Auger suppression in CdHgTe heterostructure diodes grown by molecular beam epitaxy using silver as acceptor dopant

T. Skauli, H. Steen, T. Colin, P. Helgesen, S. Løvold, C. T. Elliott, N. T. Gordon, T. J. Phillips, and A. M. White

Appl. Phys. Lett. 68, 1235 (1996); http://dx.doi.org/10.1063/1.115937 (3 pages) | Cited 11 times

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Negative differential resistance due to Auger suppression is demonstrated in CdHgTe diodes grown by molecular beam epitaxy (MBE) using silver as acceptor dopant. These devices require growth of relatively complicated heterostructures, and control of n‐ and p‐type doping over a large range. For this reason, the use of silver as an acceptor in CdHgTe devices grown by MBE has been reexamined. The results show that the diffusion of silver at the growth temperature does not necessarily preclude the use of silver doping in devices. For concentrations up to high 1017 cm−3, silver appears to be fully electrically active. © 1996 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.60.Gz Photodetectors (including infrared and CCD detectors)

Photoinduced conductivity changes in polycrystalline diamond films

P. Gonon, S. Prawer, and D. Jamieson

Appl. Phys. Lett. 68, 1238 (1996); http://dx.doi.org/10.1063/1.115938 (3 pages) | Cited 24 times

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We report that the dark electrical properties of polycrystalline chemical vapor deposition diamond films are modified after exposure to UV light. UV illumination gives rise to an increase in the dark conductivity and to a change in the I–V characteristic from Iα exp (aV) for the as‐grown material to IαV2 following UV irradiation. Thermally stimulated currents corresponding to an activation energy of about 1.9 eV are observed after UV illumination. The effects of UV irradiation can be totally reversed by thermal annealing and partially reversed by exposing the samples to white light. © 1996 American Institute of Physics.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
71.55.Cn Elemental semiconductors

Diffusion mediated chemical reaction in Co/Ge/Si(100) forming Ge/CoSi2/Si(100)

K. Prabhakaran, K. Sumitomo, and T. Ogino

Appl. Phys. Lett. 68, 1241 (1996); http://dx.doi.org/10.1063/1.115939 (3 pages) | Cited 10 times

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We report the occurrence of a diffusion mediated chemical reaction in the layered structure Co/Ge/Si(100) to form Ge/CoSi2/Si(100). This is possible due to the lower onset temperature of inward diffusion of Co in Ge(100) (∼150 °C) compared to that in Si(100) (∼300 °C). Deposition of ∼2 monolayer (ML) of Co at room temperature, onto a Ge covered (∼3 ML) Si(100) surface, mainly forms CoxGey species on the surface. However, annealing the sample at 400 °C, Co diffuses through the Ge layer and reacts with Si and forms buried cobalt silicide of the structure Ge/CoSi2/Si(100). X‐ray and ultraviolet photoelectron spectroscopy (XPS and UPS), medium energy ion scattering (MEIS) are employed for the study. The results open up a possibility to fabricate metal/semiconductor heterostructures in a novel way. © 1996 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
85.40.Ls Metallization, contacts, interconnects; device isolation

Atomic scale study of the interaction between misfit dislocations at the GaAs/Si interface

A. Vilà, A. Cornet, and J. R. Morante

Appl. Phys. Lett. 68, 1244 (1996); http://dx.doi.org/10.1063/1.115940 (3 pages) | Cited 3 times

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High resolution electron microscopy (HREM) has been applied to study the interaction between misfit dislocations at the atomic layer molecular beam epitaxy (ALMBE) GaAs/Si interface at the atomic scale. The structure of Lomer dissociations has been found to be highly sensitive to the presence of neighboring 60° ones, resulting in dislocations and delocalization of the extra {111} half planes. The dissociation has also been analyzed and qualitatively interpreted on the basis of equilibrium forces of nearby defects. © 1996 American Institute of Physics.
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61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Surface Fermi level position of hydrogen passivated Si(111) surfaces

S. Miyazaki, J. Schäfer, J. Ristein, and L. Ley

Appl. Phys. Lett. 68, 1247 (1996); http://dx.doi.org/10.1063/1.115941 (3 pages) | Cited 23 times

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Core and valence band photoemission data of hydrogen passivated Si(111):H surfaces yield surface Fermi level positions that are indicative of a near‐surface depletion layer for n‐ as well as p‐type samples. The bulk Fermi level positions are attained after annealing at ∼400 °C. These observations are explained in terms of a hydrogen induced passivation of donors and acceptors in a surface layer of the order of a μm as a result of the wet‐chemical etching procedure. © 1996 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.61.Cw Elemental semiconductors
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