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26 Feb 1996

Volume 68, Issue 9, pp. 1177-1303

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GaAs/AlAs/Si heterostructures for blocking dark current injection in impurity‐band‐conduction photodetectors

B. G. Martin, H. P. Lee, and E. W. Jones

Appl. Phys. Lett. 68, 1250 (1996); http://dx.doi.org/10.1063/1.115942 (3 pages) | Cited 2 times

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An experimental investigation was made of GaAs and GaAs/AlAs barriers on Si for blocking injected dark current in impurity‐band‐conduction (IBC) infrared photodetectors. Reducing dark current would improve detector performance. Experimental results indicate that barrier heights of the order of 0.29 eV were obtained. Current versus bias behavior at temperatures ≤20 K showed successful blocking of injected electron dark current for negative applied biases in the operating range for IBC detectors. © 1996 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
85.60.Dw Photodiodes; phototransistors; photoresistors

Surface structure of 3C‐SiC(111) grown on Si(111) surface by C60 precursor

C.‐W. Hu, A. Kasuya, S. Suto, A. Wawro, and Y. Nishina

Appl. Phys. Lett. 68, 1253 (1996); http://dx.doi.org/10.1063/1.115943 (3 pages) | Cited 20 times

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The surface structure of cubic 3C‐SiC(111) films prepared by thermal reaction of a Si(111) substrate with C60 molecules has been studied by combined in situ measurements of scanning tunneling microscopy and high resolution electron energy loss spectroscopy (HREELS‐STM). The (2×n) surface reconstructions such as (2×2), (2×3) were observed under low reaction temperatures (≤900 °C), and the Si‐terminated SiC(111)‐(3×3) was obtained by annealing the sample at higher temperatures (∼1100 °C). Optical surface phonon energies of 113±2 meV for SiC prepared at low temperatures and 116±2 meV for the films with (3×3) surface reconstruction were measured. The diffusivity of Si atoms from the substrate through the SiC film at various temperatures is suggested as the reason for the formation of different surface reconstructions of the SiC. © 1996 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Nonradiative defects in Si and SiGe/Si heterostructures grown by molecular beam epitaxy

W. M. Chen, I. A. Buyanova, A. Henry, W.‐X. Ni, G. V. Hansson, and B. Monemar

Appl. Phys. Lett. 68, 1256 (1996); http://dx.doi.org/10.1063/1.115944 (3 pages) | Cited 3 times

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Important grown‐in nonradiative defects in Si epilayers and SiGe/Si heterostructures prepared by molecular beam epitaxy are studied by the optically detected magnetic resonance technique. Several nonradiative defects are observed that have been introduced by ion bombardment during growth or by the low surface adatom mobility during low‐temperature growth. These defects are shown to provide efficient nonradiative channels for carrier recombination and, to a large extent, control the carrier lifetime. © 1996 American Institute of Physics.
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61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
71.55.Cn Elemental semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Cathodoluminescence and photoluminescence analysis of InxGa1−xAs/GaAs quantum well structures

S. Evoy, G. F. Redinbo, and H. G. Craighead

Appl. Phys. Lett. 68, 1259 (1996); http://dx.doi.org/10.1063/1.115945 (3 pages) | Cited 4 times

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Cathodoluminescence (CL) and continuous wave photoluminescence (cw‐PL) were used to study carrier recombination in the InxGa1−xAs/GaAs system for x=0.1 and x=0.2. Ambipolar diffusion length values of LD=0.9±0.1 μm and of LD=0.5±0.1 μm are measured for x=0.1 and x=0.2, respectively, at 16 K. The CL analysis of dry‐etched structures reveals a surface recombination velocity of S=107 cm/s for both material systems. A similar cw‐PL study shows a dependence on laser excitation density, suggesting the saturation of sidewall traps when higher excitation densities are involved. © 1996 American Institute of Physics.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.55.Cr III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence

Ultrathin oxides using N2O on strained Si1−xGex layers

M. Mukhopadhyay, S. K. Ray, D. K. Nayak, and C. K. Maiti

Appl. Phys. Lett. 68, 1262 (1996); http://dx.doi.org/10.1063/1.115946 (3 pages) | Cited 11 times

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Microwave N2O plasma oxidation of strained Si1−xGex layers at low temperature (<200 °C) is reported. The hole confinement in accumulation in a metal oxide semiconductor (MOS)‐gated SiGe/Si heterostructure has been confirmed by both simulation and experiments. Electrical properties are also discussed. © 1996 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.Mq Oxidation

Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface

H. Siegle, P. Thurian, L. Eckey, A. Hoffmann, C. Thomsen, B. K. Meyer, H. Amano, I. Akasaki, T. Detchprohm, and K. Hiramatsu

Appl. Phys. Lett. 68, 1265 (1996); http://dx.doi.org/10.1063/1.115947 (2 pages) | Cited 33 times

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We present results from spatially resolved photoluminescence and Raman experiments on the substrate interface region of wurtzite GaN layers. We show that the broad photoluminescence band with an intensity maximum at 2.4 eV is not an intrinsic property of GaN. We found that this photoluminescence band is strong only near the interface. Our investigations reveal that both the substrate interface and a region of structural reorientation of the layer near the interface act as a source of the photoluminescence. © 1996 American Institute of Physics.
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73.20.-r Electron states at surfaces and interfaces
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN

Lei Wang, M. I. Nathan, T‐H. Lim, M. A. Khan, and Q. Chen

Appl. Phys. Lett. 68, 1267 (1996); http://dx.doi.org/10.1063/1.115948 (3 pages) | Cited 111 times

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Platinum (Pt) and palladium (Pd) Schottky diodes on n‐type GaN grown by metalorganic chemical vapor deposition were achieved and investigated. Aluminum was used for ohmic contacts. Barrier heights were determined to be as high as ΦB=1.13 eV by the current–voltage (I–V) method and ΦB=1.27 eV by the capacitance–voltage (C–V) method for the Pt/GaN diode, and ΦB=1.11 eV, ΦB=0.96 eV, and ΦB=1.24 eV by I–V, activation energy (I–V–T), and C–V methods for the Pd/GaN diode, respectively. The ideality factors were obtained to be n∼1.10. © 1996 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001)

S. Nayak, J. W. Huang, J. M. Redwing, D. E. Savage, M. G. Lagally, and T. F. Kuech

Appl. Phys. Lett. 68, 1270 (1996); http://dx.doi.org/10.1063/1.115949 (3 pages) | Cited 6 times

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Atomic force microscopy has been used to investigate the influence of controlled oxygen incorporation on the surface morphology of GaAs films grown by metalorganic vapor phase epitaxy (MOVPE). Oxygen influences the periodic morphology observed in GaAs surfaces, with concentrations about 1018 cm−3 leading to a breakup of the periodicity. To account for these observations, we propose a model in which oxygen preferentially attaches at steps with a subsequent reduction in step mobility and a concomitant increase in the surface roughness. © 1996 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase

First implementation of a superconducting integrated receiver at 450 GHz

Valery P. Koshelets, Sergey V. Shitov, Lyudmila V. Filippenko, Andrey M. Baryshev, Hans Golstein, Thijs de Graauw, Willem Luinge, Harry Schaeffer, and Herman van de Stadt

Appl. Phys. Lett. 68, 1273 (1996); http://dx.doi.org/10.1063/1.115950 (3 pages) | Cited 38 times

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An integrated quasioptical receiver consisting of a planar double dipole antenna, superconductor‐insulator‐superconductor mixer and a superconducting local oscillator (LO) with matching circuits has been designed, fabricated and tested in the frequency range 360–490 GHz. A flux‐flow oscillator (FFO) based on unidirectional and viscous flow of magnetic vortexes in a long Josephson tunnel junction, is employed as a local oscillator. All components of the receiver are integrated on a 4 mm×4 mm×0.2 mm crystalline quartz substrate using a single Nb–AlOx–Nb trilayer. The lowest DSB noise temperature of 470–560 K has been achieved within a frequency range of 425–455 GHz. © 1996 American Institute of Physics.
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85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors

Nucleation and growth of PrBa2Cu3O7−δ barrier layers on ramps in DyBa2Cu3O7−δ studied by atomic force microscopy

M. A. J. Verhoeven, R. Moerman, M. E. Bijlsma, A. J. H. M. Rijnders, D. H. A. Blank, G. J. Gerritsma, and H. Rogalla

Appl. Phys. Lett. 68, 1276 (1996); http://dx.doi.org/10.1063/1.115951 (3 pages) | Cited 18 times

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We studied the microstructure of Ar ion‐beam etched ramps in epitaxial DyBa2Cu3O7−δ films by atomic force microscopy. Generally, ramps were well aligned (ϕ≊0°) with one of the crystal axes of the (001) SrTiO3 substrate. In those cases we observed a surface reconstruction into a regular pattern of very long (up to 0.5 μm), about 20 nm wide facets, parallel to the ramp edge. For high misorientation angles (ϕ≳0°), the reconstruction appeared much more complex and less regular. Furthermore, we investigated the nucleation and growth of very thin barrier layers of PrBa2Cu3O7−δ on well aligned ramps. We found that nucleation takes place in the shallow trenches in the ramp, where facets meet. When more material is deposited, islands coalesce to form closed domains parallel to the trenches. This causes a thickness modulation close to 100% for barrier layer thickness up to 6 nm. The conclusions drawn from this research allow for an important improvement of the technology for the fabrication of ramp‐type junctions. © 1996 American Institute of Physics.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.25.Cp Josephson devices

Stress dependence of coercivity in Ni films: Thin film to bulk transition

Luca Callegaro and Ezio Puppin

Appl. Phys. Lett. 68, 1279 (1996); http://dx.doi.org/10.1063/1.115952 (3 pages) | Cited 28 times

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The effect of uniaxial mechanical stress on the magnetic properties of electroplated Ni films was measured with a magneto‐optical Kerr loop tracer. We show that the effect of stress on the coercive force is completely different for thin (20 nm) and thick (10 μm) films. The latter behaves like bulk Ni, whereas results on lower thicknesses show a continuous transition from thin film to bulklike behavior. The results are discussed by assuming different micromagnetic reversal processes for the two extremes: rotational for thin film and domain wall movement for bulk. © 1996 American Institute of Physics.
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75.50.Cc Other ferromagnetic metals and alloys
75.60.-d Domain effects, magnetization curves, and hysteresis
75.70.Ak Magnetic properties of monolayers and thin films
75.80.+q Magnetomechanical effects, magnetostriction

Lithographic point contacts for transverse electron focusing in bismuth

M. D. Jaeger, V. Tsoi, and B. Golding

Appl. Phys. Lett. 68, 1282 (1996); http://dx.doi.org/10.1063/1.115953 (3 pages) | Cited 3 times

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An electron‐beam lithography technique for fabricating submicron point contacts to planar surfaces of bulk samples is described. We have demonstrated the technique by creating a linear array of point contacts, oriented along the bisectrix axis of a bismuth single crystal, which act as emitters and collectors in multiprobe transport measurements. In a transverse electron focusing geometry, we find the expected series of periodic voltage peaks as a function of applied magnetic field at low temperatures. The lithographically fabricated contacts offer advantages over conducting‐needle probes in electrical integrity, thermal robustness, lack of damage to the contact site, ability to make multiple submicron contacts with ≤10 μm separations and ability to align the contacts precisely along crystallographic axes. © 1996 American Institute of Physics.
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72.15.Gd Galvanomagnetic and other magnetotransport effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Roughening kinetics of chemical vapor deposited copper films on Si(100)

L. Vázquez, J. M. Albella, R. C. Salvarezza, A. J. Arvia, R. A. Levy, and D. Perese

Appl. Phys. Lett. 68, 1285 (1996); http://dx.doi.org/10.1063/1.115954 (3 pages) | Cited 15 times

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The roughening kinetics of copper films synthesized by low pressure chemical vapor deposition (LPCVD) on Si(100) substrates was investigated by scanning tunneling microscopy (STM). By applying the dynamic scaling theory to the STM images, a steady growth roughness exponent α=0.81±0.05 and a dynamic growth roughness exponent β=0.62±0.09 were determined. The value of α is consistent with growth model predictions incorporating surface diffusion. The value of β, while higher than expected from these models, can be related to LPCVD processing conditions favoring growth instabilities. © 1996 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.05.Bx Metals, semimetals, and alloys
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Synthesis of nanometer‐size silver coated polymerized diacetylene composite particles

H. S. Zhou, T. Wada, H. Sasabe, and H. Komiyama

Appl. Phys. Lett. 68, 1288 (1996); http://dx.doi.org/10.1063/1.115955 (3 pages) | Cited 21 times

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We report the synthesis of stable nanometer‐size silver‐coated polydiacetylene (PDA) particles. At first, an ethanol solution of diacetylene (DA) is dispersed into a Ag+ ion containing aqueous solution. Silver ions are attracted to –CCO− anions of DA, then monomer DA vesicles coated by silver ions are formed by a long‐term ultrasonication treatment. The monomer DA vesicles are photopolymerized and the silver ions are photo‐reduced simultaneously to form coated composite particles. © 1996 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.10.Dn Growth from solutions

Characteristics of carbon nitride films synthesized by single‐source ion beam enhanced deposition system

Zhaocu Wu, Yuehui Yu, and Xianghuai Liu

Appl. Phys. Lett. 68, 1291 (1996); http://dx.doi.org/10.1063/1.115956 (3 pages) | Cited 23 times

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Carbon nitride films on silicon (111) and (100) wafers and Ti/C substrates with nitrogen concentration up to 50 at. % have been prepared by ion beam enhanced deposition carried out in a single ion source system. The possibility of synthesis of carbon nitride films was investigated. The nitrogen concentration and the compositions of the films were analyzed by Rutherford backscattering which gave out the nitrogen concentration of the films ranging from 37 to 50 at. %, Fourier transform infrared spectroscopy, and x‐ray photoelectron spectra. The characteristics of C 1s peaks at 284.6, 285.9, 287.5, 289.5, eV and N  1s peaks at 396.0, 398.4, 399.9, 402.1 eV enabled us to analyze the compositions of the films. The results of the analyses indicate that various phases such as different carbon phases, a tetrahedrally bonded phase (β‐C3N4) and other carbon nitrides (the ratio of N/C varied from 0.5 to 1.1) are contained in the films. Furthermore the concentration of the tetrahedrally bonded phase increases with the increment of the nitrogen concentration. © 1996 American Institute of Physics.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Dynamic vapor pressure measurements of the dimethyl zinc.triethylamine adduct using an ultrasonic monitor

C. L. Griffiths, A. Stafford, S. J. C. Irvine, N. Maung, A. C. Jones, L. M. Smith, and S. A. Rushworth

Appl. Phys. Lett. 68, 1294 (1996); http://dx.doi.org/10.1063/1.115957 (3 pages) | Cited 4 times

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The 1:1 adduct of dimethyl zinc with triethylamine is an attractive precursor for the growth, using metal organic vapor phase epitaxy (MOVPE), of zinc based II‐VI compounds due to its high purity and suppression of unwanted pre‐reactions. A key parameter in MOVPE is the vapor pressure of the precursors which needs to be known in order to control the correct concentrations of organometallics entering the reactor. The literature on the vapor pressure of this precursor has been based on static measurements and has been inconsistent with the observed growth rates for ZnTe and ZnSe. An Epison ultrasonic monitor has been used to measure the concentrations under dynamic conditions and predict saturated vapor pressure (log10p=9.80–2596/T) which agree closely with the growth rate measurements but are up to a factor of 10 smaller than the static measurements. The reasons for these discrepancies are discussed. © 1996 American Institute of Physics.
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81.05.Dz II-VI semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Ultrahigh resolution of calixarene negative resist in electron beam lithography

J. Fujita, Y. Ohnishi, Y. Ochiai, and S. Matsui

Appl. Phys. Lett. 68, 1297 (1996); http://dx.doi.org/10.1063/1.115958 (3 pages) | Cited 122 times

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A nonpolymer material, calixarene derivative (hexaacetate p‐methnylcalix[6]arene) was tested as a high‐resolution negative resist under an electron beam lithography process. It showed under 10‐mm resolution with little side roughness and high durability to halide plasma etching. A sub‐10‐nm Ge quantum wire was perfectly etched off without defects. Such a performance is suitable for nanoscale device processes. © 1996 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer

High zenithal directivity from a dipole antenna on a photonic crystal

E. R. Brown and O. B. McMahon

Appl. Phys. Lett. 68, 1300 (1996); http://dx.doi.org/10.1063/1.115959 (3 pages) | Cited 37 times

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A strip dipole on a (111)‐oriented face centered cubic photonic crystal is found to have a copolarized directivity and radiative gain of 9.1 and 7.2±1.4, respectively, along the zenith and at a frequency in the first stop band of 18.0 GHz. Under the same conditions, the maximum copolarized directivity and radiative gain were 10.0 and 8.1±1.6, respectively, in the H‐plane 5° down from the zenith. The zenithal results correspond to a 5.5‐times greater radiation intensity than displayed by the same dipole in free space. From power balance measurements, only 10% of this enhancement is attributed to superior power transfer between the generator and antenna. The remainder is associated with constructive interference between the primary antenna radiation and radiation reflected from the crystal. © 1996 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
84.40.Ba Antennas: theory, components and accessories
FREE

Erratum: ‘‘Temperature dependence of thermophysical properties of GaAs/AlAs periodic structure’’ [Appl. Phys. Lett. 67, 3554 (1995)]

X. Y. Yu, G. Chen, A. Verma, and J. S. Smith

Appl. Phys. Lett. 68, 1303 (1996); http://dx.doi.org/10.1063/1.116798 (1 page) | Cited 3 times

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Abstract Unavailable
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66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
68.35.Md Surface thermodynamics, surface energies
99.10.Cd Errata
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