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30 Dec 1996

Volume 69, Issue 27, pp. 4131-4268

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Strained InGaAsP/InGaAsP/InAsP multi‐quantum well structure for polarization insensitive electroabsorption modulator with high power saturation

A. Ougazzaden and F. Devaux

Appl. Phys. Lett. 69, 4131 (1996); http://dx.doi.org/10.1063/1.117836 (2 pages) | Cited 16 times

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In this study we report a novel strained InGaAsP/InGaAsP/InAsP multiquantum well structure for electroabsorption modulators giving high power saturation together with polarization insensitivity. A careful design of the structure in terms of band‐gap engineering has been performed to fulfil both requirements. The polarization sensitivity is less than 0.5 dB for the on‐state and for a wide range of wavelengths. The carrier escape time, even at very low field, is estimated at lower than 20 ps. The transmitted power for different wavelengths is linear up to 16 dBm. © 1996 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
78.66.Fd III-V semiconductors
85.60.Bt Optoelectronic device characterization, design, and modeling
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Blue‐light second‐harmonic generation in ion‐implanted KNbO3 channel waveguides of new design

D. Fluck, T. Pliska, P. Günter, St. Bauer, L. Beckers, and Ch. Buchal

Appl. Phys. Lett. 69, 4133 (1996); http://dx.doi.org/10.1063/1.117837 (3 pages) | Cited 19 times

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We report phase‐matched second‐harmonic generation in KNbO3 channel waveguides. The guides were fabricated by one single homogeneous He+ ion irradiation and specially structured photoresist on the KNbO3 crystals serving as an implantation mask. The mask enabled the formation of channel guides with a trapezoidal‐shaped cross section providing simultaneous confinement of both TE and TM modes. 2.6 mW second‐harmonic blue‐light at 441 nm was generated in a 5.8‐mm‐long guide for an incident fundamental power of 280 mW. © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.82.Et Waveguides, couplers, and arrays

Observation of ultrafast all‐optical modulation based on intersubband transition in n‐doped quantum wells by using free electron laser

T. Suzuki, T. Mitsuyu, K. Nishi, H. Ohyama, T. Tomimasu, S. Noda, T. Asano, and A. Sasaki

Appl. Phys. Lett. 69, 4136 (1996); http://dx.doi.org/10.1063/1.117838 (3 pages) | Cited 9 times

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A picosecond‐range all‐optical modulation based on the nonlinear interaction between interband‐ and intersubband‐resonant light in GaAs/AlGaAs multiple quantum wells was demonstrated. A free electron laser (FEL) with a very short pulse width (<10 ps) was used for the intersubband excitation. The dependence of the modulation depth on the wavelength of the intersubband‐resonant light was investigated by utilizing the wide tunability of the FEL. The result is in good agreement with the intersubband absorption spectrum of the multiple quantum wells measured by FT‐IR spectroscopy, which indicates that the observed modulation is indeed based on the intersubband transition induced by the FEL. © 1996 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.66.Fd III-V semiconductors

Modal dispersion phase matching over 7 mm length in overdamped polymeric channel waveguides

Matthias Jäger, George I. Stegeman, Marinus C. Flipse, Mart Diemeer, and Guus Möhlmann

Appl. Phys. Lett. 69, 4139 (1996); http://dx.doi.org/10.1063/1.117839 (3 pages) | Cited 24 times

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Phase‐matched second harmonic generation over 7 mm is demonstrated using the modal dispersion of a composite 4‐dimethylamino‐4′‐nitrostilbene/polyetherimde channel waveguide. For a 1‐mm‐long sample a record figure of merit for polymers of η=P2ω/(PωL2)=14%/W cm2 was measured at 1550 nm. This is comparable to the value reported for LiNbO3 at that wavelength. The efficiency in longer samples is limited by fundamental and harmonic waveguide losses. © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Jk Polymers and organics
42.82.Et Waveguides, couplers, and arrays

Measurement of the interwell carrier transport lifetime in multiquantum‐well optical amplifiers by polarization‐resolved four‐wave mixing

Roberto Paiella, Guido Hunziker, Kerry J. Vahala, and Uzi Koren

Appl. Phys. Lett. 69, 4142 (1996); http://dx.doi.org/10.1063/1.117840 (3 pages) | Cited 7 times

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Polarization‐resolved four‐wave mixing spectroscopy is used to study interwell carrier dynamics in an alternating‐strain multiquantum‐well optical amplifier. The experimental data are found to be in good agreement with a simple model based on quantum capture/escape and diffusion processes. The results suggest that the interwell transport in this structure is mainly limited by carrier escape, and give an estimate of 16 ps for the overall transport lifetime. © 1996 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Comparison between optical nonlinearity relaxation times from coherent second‐harmonic generation and from incoherent hyper‐Rayleigh scattering

Naoki Matsuda, Geert Olbrechts, Erik J. H. Put, Koen Clays, and André Persoons

Appl. Phys. Lett. 69, 4145 (1996); http://dx.doi.org/10.1063/1.117841 (3 pages) | Cited 4 times

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Femtosecond hyper‐Rayleigh scattering has recently been used to determine the spatial correlation length between nonlinear optical chromophores in polymer films [G. Olbrechts et al., Chem. Phys. Lett. 253, 135 (1996)]. This correlation length corresponds to the effective interaction length for frequency doubling in waveguide format, as derived from phase‐matching curves. The temporal characteristics of this correlation length have now been studied and compared with thermal relaxation times, obtained with coherent second‐harmonic generation. The correlation length decays much faster than the second‐harmonic intensity, indicating that the efficiency of a second‐order waveguide process could decay much faster than generally anticipated. © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Jk Polymers and organics
78.66.Qn Polymers; organic compounds
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Optical properties of Si nanocrystals prepared by magnetron sputtering

V. G. Baru, A. P. Chernushich, V. A. Luzanov, G. V. Stepanov, L. Yu. Zakharov, K. P. O’Donnell, I. V. Bradley, and N. N. Melnik

Appl. Phys. Lett. 69, 4148 (1996); http://dx.doi.org/10.1063/1.116967 (3 pages) | Cited 9 times

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Visible photoluminescence (PL), optical transmission, and Raman scattering spectra of Si nanocrystals embedded in SiO2 matrix have been studied. Films were deposited by rf magnetron sputtering of compound SiO2/Si targets. Films containing silicon in the form of nanocrystals clusters show intense luminescence at room temperature. Films containing only amorphous Si clusters show little or no PL. Annealing in vacuum or in specific atmosphere leads to strong change of the PL spectrum and its intensity. Results are explained by strong influence of the Si/SiO2 interface state on integral PL emission. © 1996 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.66.Jg Amorphous semiconductors; glasses
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.15.Cd Deposition by sputtering

Incoherent collisions between one‐dimensional steady‐state photorefractive screening solitons

Ming‐feng Shih, Zhigang Chen, Mordechai Segev, Tamer H. Coskun, and Demetrios N. Christodoulides

Appl. Phys. Lett. 69, 4151 (1996); http://dx.doi.org/10.1063/1.116968 (3 pages) | Cited 25 times

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We report the observation of collisions between mutually incoherent, one‐dimensional, bright, steady‐state photorefractive screening solitons. Using the theory of planar dielectric waveguides together with the theory of photorefractive screening solitons, we explain how the collisions depend on the peak intensity of the solitons and the externally applied biased field. Finally, we compare the experimental results with direct numerical simulations. © 1996 American Institute of Physics.
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42.65.Tg Optical solitons; nonlinear guided waves
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Narrow spectral bandwidths with grating waveguide structures

A. Sharon, D. Rosenblatt, and A. A. Friesem

Appl. Phys. Lett. 69, 4154 (1996); http://dx.doi.org/10.1063/1.116969 (3 pages) | Cited 47 times

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Under certain conditions grating/waveguide structures have a resonant behavior with narrow spectral bandwidths. Several such structures were designed, fabricated, and evaluated, demonstrating resonances with narrow spectral bandwidths ranging to as low as 0.035 nm at full width at half maximum. These can be exploited as compact spectral filters having high finesse. © 1996 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Dj Gratings
42.79.Gn Optical waveguides and couplers

Fabrication and characterization of ion‐exchanged waveguides in potassium titanyl arsenate

W. P. Risk and G. M. Loiacono

Appl. Phys. Lett. 69, 4157 (1996); http://dx.doi.org/10.1063/1.116970 (2 pages) | Cited 1 time

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Optical waveguides can be fabricated in the nonlinear material potassium titanyl arsenate (KTiOAsO4) using ion exchange in a mixed RbNO3/Ba(NO3)2 melt. The guiding properties of such waveguides were measured and the variation of these properties with changes in processing conditions was investigated. © 1996 American Institute of Physics.
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42.65.Wi Nonlinear waveguides
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Absolute pressure measurements on a nanosecond time scale using surface plasmons

A. Schilling, O. Yavaş, J. Bischof, J. Boneberg, and P. Leiderer

Appl. Phys. Lett. 69, 4159 (1996); http://dx.doi.org/10.1063/1.116971 (3 pages) | Cited 9 times

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Transient acoustic waves generated by laser‐induced bubble formation at a liquid–solid interface are sensitively monitored using optically excited surface plasmons. This method enables the detection of both the compressive and tensile waves with high accuracy as demonstrated for the propagation and reflection of acoustic pulses at a quartz–water interface. Unique advantages of this new technique are the high sensitivity of 0.1–0.2 MPa that could be achieved for absolute pressure measurements on a nanosecond time scale and its ability to probe exact pulse profiles due to the localized probe depth of surface plasmons. © 1996 American Institute of Physics.
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43.35.Yb Ultrasonic instrumentation and measurement techniques
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
07.35.+k High-pressure apparatus; shock tubes; diamond anvil cells

Imaging of optical inhomogeneities in highly diffusive media: Discrimination between scattering and absorption contributions

R. Cubeddu, A. Pifferi, P. Taroni, A. Torricelli, and G. Valentini

Appl. Phys. Lett. 69, 4162 (1996); http://dx.doi.org/10.1063/1.116972 (3 pages) | Cited 10 times

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An effective projection imaging technique is proposed that allows not only detection of realistic optical inhomogeneities in highly diffusive media, but also the discrimination between scattering and absorption contributions. The method is based on information derived from time‐resolved transmittance measurements. Scattering inhomogeneities are discriminated using maps of the transport scattering coefficient, as provided by best fitting of the diffusion theory to experimental data. Absorption variations are effectively classified by time gating on the tail of the transmittance pulse. © 1996 American Institute of Physics.
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42.30.Va Image forming and processing
07.60.-j Optical instruments and equipment
87.80.-y Biophysical techniques (research methods)

Light emission from a silicon quantum well

E. F. Steigmeier, R. Morf, D. Grützmacher, H. Auderset, B. Delley, and R. Wessicken

Appl. Phys. Lett. 69, 4165 (1996); http://dx.doi.org/10.1063/1.116973 (3 pages) | Cited 9 times

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We compare the photoluminescence (PL) properties of silicon (Si) single quantum well structures, consisting of an either amorphous or crystalline Si layer of 3 nm thickness, embedded between silicon–nitride layers. These structures are grown by plasma‐enhanced chemical vapor deposition on Si substrates. After crystallization of the originally amorphous Si layers and passivation by hydrogen, strongly polarized PL is observed in the entire visible spectrum. In contrast, a reference structure without the 3 nm silicon layer, but otherwise identical, shows PL in the red and infrared only, but also strongly polarized. Thus, the PL in the blue and green part of the spectrum comes from recombination via Si quantum well states, while the red and infrared PL is due to states at the interface between crystalline Si and silicon–nitride. © 1996 American Institute of Physics.
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78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators

Bimolecular reactions of singlet excitons in tris(8‐hydroxyquinoline) aluminum

I. Sokolik, R. Priestley, A. D. Walser, R. Dorsinville, and C. W. Tang

Appl. Phys. Lett. 69, 4168 (1996); http://dx.doi.org/10.1063/1.116974 (3 pages) | Cited 61 times

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We have studied singlet excited state dynamics in thin films of tris(8‐hydroxyquinoline) aluminum (Alq3), a well known emitter for organic electroluminescent devices. Our experimental results show that bimolecular recombination dominates the singlet exciton decay in pristine films at high intensities, thus decreasing the photoluminescence quantum efficiency and the singlet lifetime. Because of the relatively low carrier concentration at which light emitting diodes operate the electroluminescence efficiency is not affected. The measured rate constant of singlet–singlet annihilation in Alq3 films is γss=(3.5±2.5)×10−11 cm3 s−1. The diffusion coefficient and the diffusion length of singlet excitons estimated from γss are Ds=(1.2±0.8)×10−5 cm2 s−1 and L=98±40 Å, respectively. © 1996 American Institute of Physics.
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78.66.Qn Polymers; organic compounds
78.55.Kz Solid organic materials
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

The transport properties of nanocrystalline SrCe0.95Yb0.05O3 thin films

Igor Kosacki and Harlan U. Anderson

Appl. Phys. Lett. 69, 4171 (1996); http://dx.doi.org/10.1063/1.116975 (3 pages) | Cited 18 times

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The results of electrical transport measurements on nanocrystalline SrCe0.95Yb0.05O3 thin films are presented. Dense SrCe0.95Yb0.05O3 thin films with 30–70 nm grain size have been obtained using a spin‐coating technique. These films exhibit about 103 higher electrical conductivity when compared with the bulk polycrystalline material. The grain size of thin films is stable to temperatures as high as 1000 °C since no grain‐coarsening was observed. These unique electrical properties of nanocrystalline SrCe0.95Yb0.05O3 thin films are attributed to a dominant role of grain boundaries and/or interfaces. © 1996 American Institute of Physics.
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73.61.Le Other inorganic semiconductors
82.47.-a Applied electrochemistry
81.07.-b Nanoscale materials and structures: fabrication and characterization

New method of carbon nanotube growth by ion beam irradiation

Kazuhiro Yamamoto, Yoshinori Koga, Shuzo Fujiwara, and Masaaki Kubota

Appl. Phys. Lett. 69, 4174 (1996); http://dx.doi.org/10.1063/1.116976 (2 pages) | Cited 15 times

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We report a new method of carbon nanotube growth by the argon ion beam irradiation of amorphous carbon under high vacuum conditions of 4×10−5 Torr. Earlier, carbon nanotubes have been produced at gas pressures above 100 Torr. The incident angle of the ion beam was normal to the target surface, and the acceleration ion energy was 3 keV. Nanotubes are produced outside the sputtering region on the target surface after ion irradiation. The tubes have multilayered walls, the distance between carbon layers is 0.34 nm, and wall thickness of tubes ranges from 10 to 15 sheets. © 1996 American Institute of Physics.
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81.05.ub Fullerenes and related materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Temperature‐dependent orientation of diamond films on titanium and structural evolution of interfacial layers

Giorgio Cappuccio, Vito Sessa, and Maria Letizia Terranova

Appl. Phys. Lett. 69, 4176 (1996); http://dx.doi.org/10.1063/1.116977 (3 pages) | Cited 8 times

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X‐ray diffraction analytical techniques have been used to investigate the influence of the deposition temperature (650–850 °C) on the composition and microstructure of the transition layers formed at the interface between titanium substrates and diamond thin films. The diamond coatings were produced by hot‐filament chemical vapor deposition using a 1% methane/hydrogen mixture. X‐ray diffraction analysis, performed both through θ–2θ scans and at grazing incidence, allowed investigation of the crystallographic properties and of the structural evolution of the various phases (TiC, TiH2, α‐Ti) generated inside the intermediate reaction layers. The temperature‐dependent orientation of diamond crystallites is discussed with reference to the complex structure of these interfacial layers. © 1996 American Institute of Physics.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
61.05.cm X-ray reflectometry (surfaces, interfaces, films)

The investigation of defect formation in chemical vapor deposited diamond using photoluminescence by ultraviolet synchrotron radiation

Jaihyung Won, Akimitsu Hatta, Toshimichi Ito, Takatomo Sasaki, and Akio Hiraki

Appl. Phys. Lett. 69, 4179 (1996); http://dx.doi.org/10.1063/1.116978 (3 pages) | Cited 10 times

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Photoluminescence (PL) of microwave assisted chemical vapor deposited (CVD) diamond was obtained using ultraviolet synchrotron radiation. The PL spectrum of the 5RL band (intrinsic defect), which cannot be detected in cathodoluminesence, was observed for both undoped (as grown) and boron doped (200 ppm) CVD diamond. The defect formation was characterized in the thin near‐surface layer. The peak of boron related origin (2.3 eV) was detected in the boron doped CVD while band A (2.9 eV) was not observed. After remote hydrogen plasma treatment (RHPT), the near‐surface defect related peak in the PL spectra disappeared. During RHPT the diamond was rehybridized by hydrogen radicals without etching. © 1996 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.66.Db Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors

Diffusion barrier performance of chemically vapor deposited TiN films prepared using tetrakis‐dimethyl‐amino titanium in the Cu/TiN/Si structure

Do‐Heyoung Kim, Sung‐Lae Cho, Ki‐Bum Kim, Jung Ju Kim, Jin Won Park, and Jae Jung Kim

Appl. Phys. Lett. 69, 4182 (1996); http://dx.doi.org/10.1063/1.116979 (3 pages) | Cited 21 times

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We investigated diffusion barrier performance of chemical vapor deposition (CVD) TiN films prepared using tetrakis‐dimethyl‐amino titanium, Ti[N(CH3)2]4, to copper in the Cu/TiN/Si structure. The in situ treatment of the TiN films using N2/H2 plasma was found to significantly improve barrier performance against copper diffusion. The plasma‐treated TiN films were stable up to 650 °C but as‐deposited TiN films showed an evidence of copper diffusion into silicon even after annealing at 550 °C. The causes of the different effectiveness as a copper diffusion barrier of the two types of the CVD TiN films were discussed. © 1996 American Institute of Physics.
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
85.40.Ls Metallization, contacts, interconnects; device isolation

A multiple‐negative‐differential‐resistance switch with double InGaP barriers

Der‐Feng Guo, Chin‐Chuan Cheng, Kun‐Wei Lin, Wen‐Chau Liu, and Wei Lin

Appl. Phys. Lett. 69, 4185 (1996); http://dx.doi.org/10.1063/1.116980 (3 pages) | Cited 6 times

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A GaAs‐InGaP switch has been fabricated and demonstrated. In this device, double i‐InGaP layers are employed to provide the potential barriers for carrier tunneling and hole confinement. As sufficient external voltage is applied to this device, a double S‐shaped negative‐differential‐ resistance (NDR) characteristics is obtained resulting from the sequential avalanche multiplications in the high electric field regions. However, because of the poor confinement effect to holes, only a single S‐shaped NDR phenomenon is observed at higher temperature. With device parameters appropriately adjusted, this device may show prominent potential for multiple‐valued logic applications. © 1996 American Institute of Physics.
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85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura

Appl. Phys. Lett. 69, 4188 (1996); http://dx.doi.org/10.1063/1.116981 (3 pages) | Cited 596 times

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Emission mechanisms of InGaN single quantum well blue and green light emitting diodes and multiquantum well structures were investigated by means of modulation spectroscopy. Their static electroluminescence (EL) peak was assigned to the recombination of excitons localized at certain potential minima in the quantum well. The blueshift of the EL peak caused by the increase of the driving current was explained by combined effects of the quantum‐confinement Stark effect and band filling of the localized states by excitons. © 1996 American Institute of Physics.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Sticking coefficient and growth rate during Al chemical vapor deposition

I. Karpov, W. Gladfelter, and A. Franciosi

Appl. Phys. Lett. 69, 4191 (1996); http://dx.doi.org/10.1063/1.116982 (3 pages) | Cited 2 times

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Studies of aluminum chemical vapor deposition (CVD) from dimethylethylamine alane on GaAs(100) 2×4 surfaces were used to identify the high‐temperature, flux‐limited growth regime and determine the effective sticking coefficient α. Following a short induction period, α was found to achieve a largely temperature‐independent steady‐state value (α=0.13±0.04), substantially lower than expected based on current CVD models. We propose that steric effects—previously ignored in CVD—play a role in determining the upper limit of α and therefore the maximum achievable growth rate. © 1996 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Bx Metals, semimetals, and alloys
68.55.-a Thin film structure and morphology
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Recombination dynamics in InGaN quantum wells

E. S. Jeon, V. Kozlov, Y.‐K. Song, A. Vertikov, M. Kuball, A. V. Nurmikko, H. Liu, C. Chen, R. S. Kern, C. P. Kuo, and M. G. Craford

Appl. Phys. Lett. 69, 4194 (1996); http://dx.doi.org/10.1063/1.116983 (3 pages) | Cited 73 times

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Transient photoluminescence measurements are reported on a thin InGaN single quantum well, encompassing the high injection regime. The radiative processes that dominate the recombination dynamics, especially at low temperatures, show the impact of localized electronic states that are distributed over a large energy range (∼100 meV). We suggest that these states originate from microstructural disorder in the InGaN/GaN system. © 1996 American Institute of Physics.
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78.66.Fd III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.47.-p Spectroscopy of solid state dynamics

Contact resistances of NiGeAu, PdGeTiPt, and TiPd ohmic contacts to GaAs and their temperature dependence from 4.2 to 350 K

K. A. Jones, E. H. Linfield, and J. E. F. Frost

Appl. Phys. Lett. 69, 4197 (1996); http://dx.doi.org/10.1063/1.116984 (3 pages) | Cited 8 times

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The specific contact resistance (rc) of NiGeAu and PdGeTiPt ohmic contacts to n‐GaAs and TiPd and PdGeTiPt ohmic contacts to p+‐GaAs were determined as a function of temperature between 4.2 and 350 K. The low rc obtained for some of the contacts at 4.2 K implies that much of the total contact resistance measured at 4.2 K in two‐dimensional electron gas structures lies across the n–n heterojunction(s) in series with the metal semiconductor junction. Although NiGeAu contacts have a lower contact resistance to n‐GaAs, PdGeTiPt contacts, which have much better edge definition, can be substituted for the NiGeAu when they are properly annealed. Also, contacts with low rc values at 4.2 K can be made to p+‐GaAs using either TiPd or properly annealed PdGeTiPt contacts. The rc versus temperature curves for the TiPd and alloyed NiGeAu contacts fit the field emission model. The other contacts have a larger temperature dependence suggesting that tunneling occurs via thermionic field emission directly through the barrier or via defect states. © 1996 American Institute of Physics.
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73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts

Observation of quantum carrier confinement near Zn0.61Cd0.39Se/InP heterointerface

Kai Shum, L. Zeng, N. Dai, and M. C. Tamargo

Appl. Phys. Lett. 69, 4200 (1996); http://dx.doi.org/10.1063/1.116985 (3 pages) | Cited 2 times

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We report on the experimental observation of quantum carrier confinement near the ZnCdSe/InP interface using the capacitance voltage profiling technique. Three subband states are identified at different spatial position‐expectation value. Type II band alignment between ZnCdSe and InP is determined. The conduction band discontinuity at the Zn0.61Cd0.39Se/InP heterointerface is estimated to be −102 meV. © 1996 American Institute of Physics.
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71.55.Gs II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.70.Hj Laser materials
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