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30 Sep 1996

Volume 69, Issue 14, pp. 1991-2139

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Key trade‐offs for second harmonic generation in poled polymers

Akira Otomo, Matthias Jäger, George I. Stegeman, Marinus C. Flipse, and Mart Diemeer

Appl. Phys. Lett. 69, 1991 (1996); http://dx.doi.org/10.1063/1.116856 (3 pages) | Cited 19 times

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We discuss the critical trade‐off between the spectral dispersion in the second order nonlinearity d(2) and the linear absorption coefficient for second harmonic generation (SHG) by the mixing of copropagating or counterpropagating fundamental beams in poled polymers. The 4‐dimethylamino–4′‐nitrostilbene side‐chain polymer is used as a specific example. The predictive power of the classical two‐level model for SHG is also assessed. © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Jk Polymers and organics
42.82.Et Waveguides, couplers, and arrays

Nonlinear optical studies of single crystal films of N–(4‐nitrophenyl)–L–prolinol

R. Quintero‐Torres and M. Thakur

Appl. Phys. Lett. 69, 1994 (1996); http://dx.doi.org/10.1063/1.116857 (3 pages) | Cited 4 times

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Single crystal films of N–(4‐nitrophenyl)‐L–prolinol have been prepared by modified shear method and the second order optical susceptibility has been measured by second harmonic generation. The small thickness and high nonlinear coefficient of the films allowed second order optical measurements without considering phase matching. The magnitudes of the tensor elements of second order optical susceptibility were determined by detailed polarization selective measurements. The maximum effective value of the nonlinearity, dmaxeff was found to be approximately 18 times the deff of LiNbO3. The value of d21 is equal to 97 (±5) pm/V and d22 is equal to 30 (±5) pm/V at 1064 nm. Our analyses show that both type‐I and type‐II phase matching should be possible in waveguides of this material. © 1996 American Institute of Physics.
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42.65.An Optical susceptibility, hyperpolarizability
42.70.Jk Polymers and organics

Efficiency enhancement of microcavity organic light emitting diodes

R. H. Jordan, A. Dodabalapur, and R. E. Slusher

Appl. Phys. Lett. 69, 1997 (1996); http://dx.doi.org/10.1063/1.116858 (3 pages) | Cited 127 times

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We report microcavity efficiency enhancement of organic electroluminescent devices based on the hole transporter bis(triphenyl) diamine and the electron transporter and light emitter tris(8‐hydroxyquinoline) aluminum. Microcavity organic light emitting diodes are described that emit four times the light measured in the forward direction (spectrally integrated), or almost twice the total light (spectrally and spatially integrated) of a noncavity organic light‐emitting diode for identical electrical drive conditions. © 1996 American Institute of Physics.
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85.60.Pg Display systems
42.79.Kr Display devices, liquid-crystal devices
78.66.Qn Polymers; organic compounds

Spectral‐gate injection seeding in tunable lasers

Z. Y. Peshev, A. D. Deleva, and Z. I. Aneva

Appl. Phys. Lett. 69, 2000 (1996); http://dx.doi.org/10.1063/1.116859 (3 pages)

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A new concept, defined as spectral‐gate injection seeding, is proposed for coupling the master oscillator (MO) and the forced oscillator (FO) in tunable injection‐seeding laser systems. It is based on the use of a spectral selector as a tunable narrowband spectral gate between the partially coupled MO and FO cavities. The concept proposed enables one to implement compact and efficient injection‐seeded tunable lasers. It is demonstrated experimentally on Nd:YAG‐laser pumped dye lasers with a Fizeau interferometer as a spectral gate. Full suppression of the FO’s broadband spectral background is acheived even when the MO operates near the threshold. © 1996 American Institute of Physics.
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42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Photorefractive grating formation in piezoelectric La3Ga5SiO14:Pr3+ crystals

C. Dam‐Hansen, P. M. Johansen, and V. M. Fridkin

Appl. Phys. Lett. 69, 2003 (1996); http://dx.doi.org/10.1063/1.116860 (3 pages) | Cited 12 times

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Photorefractive grating formation and erasure in piezoelectric crystals of La3Ga5SiO14:Pr3+ are presented. The specific photoconductivity and the photorefractive sensitivity are determined. The polarization dependence of the grating formation due to the bulk photovoltaic effect is shown and compared favorably with the theoretical expression. This photorefractive material provides a possibility for separate investigations of the charge migration processes responsible for the photorefractive effect. © 1996 American Institute of Physics.
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42.70.Ln Holographic recording materials; optical storage media
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.40.Eq Holographic optical elements; holographic gratings
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Ultralow‐loss broadened‐waveguide high‐power 2 μm AlGaAsSb/InGaAsSb/GaSb separate‐confinement quantum‐well lasers

D. Z. Garbuzov, R. U. Martinelli, H. Lee, P. K. York, R. J. Menna, J. C. Connolly, and S. Y. Narayan

Appl. Phys. Lett. 69, 2006 (1996); http://dx.doi.org/10.1063/1.116861 (3 pages) | Cited 57 times

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Broadening the waveguides of 2 μm AlGaAsSb/InGaAsSb separate‐confinement multiquantum‐well lasers decreases their internal losses to 2 cm−1, while threshold current densities remain as low as 300 A/cm2. The consequently high cw differential efficiency of 0.36 results in output powers of 1.2 W from 100 μm aperture lasers at 15 °C. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
78.66.Fd III-V semiconductors

Experimental investigation of the differential gain in semiconductor lasers and its influence on Q‐switching performance

H. D. Summers and P. Rees

Appl. Phys. Lett. 69, 2009 (1996); http://dx.doi.org/10.1063/1.116862 (3 pages) | Cited 4 times

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The gain spectra of AlGaInP, single quantum well, laser diodes were obtained by measurement of their spontaneous emission spectra and subsequent conversion according to the Einstein relations. From these spectra the ratio of differential absorption to differential gain, γ was calculated. At energies greater than the lasing transition a threefold increase in the differential absorption may be achieved in compressively strained devices, giving a value of γ=14.4. These results indicate that by detuning the saturable absorber energy within a Q‐switched device by 20 meV a doubling of the inversion factor may be obtained. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
85.60.Jb Light-emitting devices

Evanescent‐field amplification in Nd3+‐doped fluoride planar waveguide

T. Ohtsuki, S. Honkanen, N. Peyghambarian, M. Takahashi, Y. Kawamoto, J. Ingenhoff, A. Tervonen, and K. Kadono

Appl. Phys. Lett. 69, 2012 (1996); http://dx.doi.org/10.1063/1.116863 (3 pages) | Cited 8 times

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Planar channel waveguides of rare‐earth doped fluoride glass are demonstrated with single mode excitation and propagation losses below 3 dB/cm. The waveguide core was fabricated by Ag+–Na+ molten salt ion exchange process in a borosilicate glass (BGG31), and a Nd3+‐doped ZBLAN glass was used as a cladding. A 0.45 dB signal amplification at 1.064 μm was observed in the fabricated 1 cm long waveguide, and a 0.9 dB amplification is expected at the emission peak (1.049 μm). Modeling results show 2.5 dB/cm potential gain with the improvement in surface flatness of ZBLAN glass. © 1996 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.70.Ce Glasses, quartz

Theoretical model for an improved radiation pressure micromotor

R. C. Gauthier

Appl. Phys. Lett. 69, 2015 (1996); http://dx.doi.org/10.1063/1.116864 (3 pages) | Cited 17 times

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A simple modification to an existing radiation pressure micromotor design is modeled. The results indicate that inclining the top surfaces of the micromotor increases the rotation inducing torque by a factor of 2. The direction of rotation can be selected by resizing the radiating light beam’s minimum waist. © 1996 American Institute of Physics.
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42.50.-p Quantum optics
42.25.-p Wave optics
42.79.-e Optical elements, devices, and systems

Fast wavelength switching of semiconductor laser pulses by self‐seeding

D. Huhse, M. Schell, W. Utz, D. Bimberg, J. A. R. Williams, L. Zhang, and I. Bennion

Appl. Phys. Lett. 69, 2018 (1996); http://dx.doi.org/10.1063/1.116865 (3 pages) | Cited 21 times

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Electrically wavelength tunable single‐mode laser pulses with a width (FWHM) of about 30 ps were achieved by gain‐switching and self‐seeding of a 1.5 μm Fabry‐Perot laser diode. Using a novel setup with a short, wavelength depending cavity length, switching between different wavelengths is demonstrated here at a frequency of 10 kHz. The buildup of stable single mode emission takes less than 7 roundtrips thus showing the potential of this approach for fast electrical wavelength switching in the tens‐of‐MHz range. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Caterpillar‐type piezoelectric d33 bimorph transducer

V. D. Kugel, Sanjay Chandran, and L. E. Cross

Appl. Phys. Lett. 69, 2021 (1996); http://dx.doi.org/10.1063/1.116866 (3 pages) | Cited 8 times

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A piezoelectric bimorph transducer utilizing piezoelectric d33 coefficient was developed. This bimorph consists of piezoelectric segments bonded by a polymeric agent and was fabricated by a dicing and layering technique. The transducer has superior piezoelectric characteristics compared to standard piezoelectric d31 bimorphs. Piezoelectric coefficients, electrical admittance, mechanical compliance, and losses of the actuator were found to increase with increasing driving electric field. © 1996 American Institute of Physics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
43.38.Fx Piezoelectric and ferroelectric transducers
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Undriven periodic plasma oscillation in electron cyclotron resonance Ar plasma

Pyung‐Woo Lee, Sang‐Won Lee, and Hong‐Young Chang

Appl. Phys. Lett. 69, 2024 (1996); http://dx.doi.org/10.1063/1.116867 (3 pages) | Cited 6 times

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We report experimental observation of periodic oscillation in a steady state electron cyclotron resonance argon plasma that is not driven by extra periodic forces. We interpret the oscillation according to the predator‐prey model, which is a nonlinear plasma‐neutral coupling in the plasma production region. The oscillation is observed in a narrow plasma parameter window and is evidence for neutral density depletion in a high density plasma system. © 1996 American Institute of Physics.
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52.35.-g Waves, oscillations, and instabilities in plasmas and intense beams
52.70.-m Plasma diagnostic techniques and instrumentation

Pulsed laser deposition of highly conductive iridium oxide thin films

M. A. El Khakani, M. Chaker, and E. Gat

Appl. Phys. Lett. 69, 2027 (1996); http://dx.doi.org/10.1063/1.116868 (3 pages) | Cited 23 times

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Highly conductive IrO2 thin films have been deposited on Si (100) substrates by means of pulsed laser ablation of iridium metal target in an oxygen ambient pressure of 200 mTorr. IrO2 films grown at substrate temperatures in the 400–550 °C range are polycrystalline with a preponderant (101) IrO2 reflection and exhibit a dense granular morphology. Their room‐temperature resistivities are very comparable to that of bulk single‐crystal IrO2. IrO2 thin films with a resistivity of (39±4) μΩ cm are obtained at a substrate temperature as low as 400 °C. The dependence of IrO2 films properties on the nature and/or the preparation of their underlying substrates is pointed out. © 1996 American Institute of Physics.
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68.55.-a Thin film structure and morphology
73.50.Dn Low-field transport and mobility; piezoresistance
81.15.Fg Pulsed laser ablation deposition

The role of ambient gas scattering effect and lead oxide formation in pulsed laser deposition of lead–zirconate–titanate thin films

C. S. Ma, S. K. Hau, K. H. Wong, P. W. Chan, and C. L. Choy

Appl. Phys. Lett. 69, 2030 (1996); http://dx.doi.org/10.1063/1.116869 (3 pages) | Cited 6 times

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The angular distribution of lead in films deposited by pulsed laser irradiation of lead–zirconate–titanate and lead targets are studied as a function of ambient gas (argon or oxygen), gas pressure, and substrate temperature. When the substrate is kept in vacuum and at room temperature, a dip in the lead content attributable to the intrinsic resputtering of lead is observed at the position of the target surface normal. In the presence of an ambient gas, the dip disappears and the lead content increases at all angles. These results are attributed to a reduction of resputtering arising from scattering of the ablated species by ambient gas molecules. Under ambient oxygen and at high substrate temperature, the retention of lead content in the deposited films is largely due to the formation of lead oxide. © 1996 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
68.55.-a Thin film structure and morphology
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Defect‐related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2

K. S. Min, K. V. Shcheglov, C. M. Yang, Harry A. Atwater, M. L. Brongersma, and A. Polman

Appl. Phys. Lett. 69, 2033 (1996); http://dx.doi.org/10.1063/1.116870 (3 pages) | Cited 208 times

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Two sources of room temperature visible luminescence are identified from SiO2 films containing ion beam synthesized Si nanocrystals. From a comparison of luminescence spectra and photoluminescence decay lifetime measurements between Xe+‐implanted SiO2 films and SiO2 films containing Si nanocrystals, a luminescence feature attributable to defects in the SiO2 matrix is unambiguously identified. Hydrogen passivation of the films selectively quenches the matrix defect luminescence, after which luminescence attributable to Si nanocrystals is evident, with a lifetime on the order of milliseconds. The peak energy of the remaining luminescence attributable to Si nanocrystals ‘‘redshifts’’ as a function of different processing parameters that might lead to increased nanocrystal size and the intensity is directly correlated to the formation of Si nanocrystals. Upon further annealing hydrogen‐passivated samples at low temperatures (<500 °C), the intensity of nanocrystal luminescence increases by more than a factor of 10. © 1996 American Institute of Physics.
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78.66.Jg Amorphous semiconductors; glasses
78.55.Ap Elemental semiconductors
71.35.-y Excitons and related phenomena
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Deflection detection and feedback actuation using a self‐excited piezoelectric Pb(Zr,Ti)O3 microcantilever for dynamic scanning force microscopy

T. Itoh, C. Lee, and T. Suga

Appl. Phys. Lett. 69, 2036 (1996); http://dx.doi.org/10.1063/1.116871 (3 pages) | Cited 35 times

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We have developed a dynamic scanning force microscope (SFM) that utilizes microfabricated Pb(Zr,Ti)O3, (PZT) cantilever for lever excitation, deflection sensing and tip‐sample spacing control. The lever is a unimorph centilever including a sol–gel derived PZT thin film that has high piezoelectric constants in comparison with sputtered ZnO films. For dynamic operation, the excitation ac voltage signal superimposed on the actuation dc voltage is applied to the PZT layer. The variation of vibration amplitude is detected by measuring the change of current through the layer. By actuating the self‐excited cantilever to keep the current constant, we obtain topography images without z actuation of the sample‐side scanner. The 200‐μm‐long PZT microcantilever with the natural resonance frequency of 63.8 kHz has the high actuation sensitivity of 150 nm/V and the maximum range of more than 1.5 μm. Using the SFM, we have obtained the clear cyclic contact images of an evaporated Au film surface. © 1996 American Institute of Physics.
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07.79.Lh Atomic force microscopes
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Enhanced resistance to metal induced crystallization of amorphous Ge in contact with Bi

T. Missana, C. N. Afonso, A. K. Petford‐Long, and R. C. Doole

Appl. Phys. Lett. 69, 2039 (1996); http://dx.doi.org/10.1063/1.116872 (3 pages) | Cited 9 times

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The metal‐induced crystallization (MIC) of amorphous Ge (α‐Ge) has been studied in two different Bi/α‐Ge bilayer film systems prepared by dc sputtering: films with nm‐size columnar Bi grains and films with micron‐size laminar Bi grains produced by pulsed laser irradiation. Both systems were annealed in situ in a transmission electron microscope in order to determine the temperature at which the semiconductor crystallizes as a function of the metal grain size and the mechanism by which crystallization occurs. The results show that increasing the gram size by two orders of magnitude leads to an increase in the Ge crystallization temperature above the eutectic temperature of the Ge–Bi system and, thus, to a system with an enhanced resistance to MIC. © 1996 American Institute of Physics.
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68.55.-a Thin film structure and morphology
64.70.K- Solid-solid transitions
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Electron spin resonance of polyparaphenylene‐based carbons

M. J. Matthews, M. S. Dresselhaus, N. Kobayashi, T. Enoki, M. Endo, and T. Takahashi

Appl. Phys. Lett. 69, 2042 (1996); http://dx.doi.org/10.1063/1.116873 (3 pages) | Cited 5 times

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We report electron spin resonance (ESR) results on heat‐treated polyparaphenylene (PPP) over the heat‐treatment temperature (THT) range of 650–2900 °C. Two distinct spin centers are identified corresponding to a broad (∼5 G) ESR peak below THT=750 °C and a narrow (∼0.5 G) ESR peak above THT=650 °C. ESR peaks from both spin centers are observable for THT=700 °C, a material of particular interest for device applications. T1 and T2, the spin‐lattice and spin‐spin relaxation times, respectively, are estimated for both spin centers, and these results are discussed in relation to previously reported Raman spectroscopy and magnetic susceptibility measurements. © 1996 American Institute of Physics.
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61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
76.30.-v Electron paramagnetic resonance and relaxation
71.20.Rv Polymers and organic compounds

Nanotubes in boron nitride laser heated at high pressure

D. Golberg, Y. Bando, M. Eremets, K. Takemura, K. Kurashima, and H. Yusa

Appl. Phys. Lett. 69, 2045 (1996); http://dx.doi.org/10.1063/1.116874 (3 pages) | Cited 133 times

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Here we report on the finding of pure boron nitride (BN) nanotubes that do not contain any additional inclusions and on a new method for their growth: laser heating of boron nitrides at high nitrogen pressure (5–15 GPa). The multiwalled nanotubes were observed using high resolution electron microscopy and were chemically characterized by electron energy loss spectroscopy. The circular or polygonal cross‐sectional nanotubes, which have 3–8 shells and a characteristic outer dimension cross section of 3–15 nm, were found to have grown either in melted cubic BN or in hexagonal+amorphous BN that had recrystallized on the specimen’s surface from the fluid phase. © 1996 American Institute of Physics.
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81.05.Zx New materials: theory, design, and fabrication
61.46.-w Structure of nanoscale materials
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Structure of 3×2, 5×2, and 7×2 reconstructed 3C‐SiC(001) surfaces obtained during epitaxial growth: Molecular dynamics simulations

Makoto Kitabatake and J. E. Greene

Appl. Phys. Lett. 69, 2048 (1996); http://dx.doi.org/10.1063/1.116875 (3 pages) | Cited 9 times

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The stable Si‐terminated 3C‐SiC(001) surface exhibits a 2×1 reconstruction similar to Si(001)2×1, but with a longer dimer bond length, 2.49 vs 2.40 Å, due to a higher backbond strength. Molecular dynamics simulations show that deposition of Si adatoms on 3C‐SiC(001)2×1 results in the formation of a series of missing‐dimer‐row type reconstructions of the type h×2 where h=...,7,5,3 with increasing ad‐Si coverage. The basic building block for the h×2 surfaces is a two‐ad‐dimer unit. Si surface atoms below missing ad‐Si dimers between neighboring ad‐Si dimer pairs remain dimerized and 90° rotated. The most stable Si‐terminated h×2 structure is 3C‐SiC(001)3×2, which represents the closest‐packed array of two‐ad‐dimer units, with a dangling bond density of 0.67 per 3C‐SiC(001)1×1 unit cell. © 1996 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology

Effect of postdeposition anneal on the resistivitity of p‐type polycrystalline diamond films

S. Sahli and D. M. Aslam

Appl. Phys. Lett. 69, 2051 (1996); http://dx.doi.org/10.1063/1.116876 (2 pages) | Cited 3 times

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A four‐point probe method is used to study the effect of a 10 min anneal in N2 at 600 °C on the resistivity of B‐doped chemical vapor deposited diamond samples as a function of doping and film quality, as determined by Raman spectroscopy. Measurements on diamond films deposited on oxidized Si having resistivities in the ranges of 0.27–535 Ω cm, show that the increase of resistivity after the anneal is more prominent for films with low doping and high quality. There seems to be a doping level above which the effect of anneal is not observable. the dependence of the effect of anneal on the doping level and diamond quality is reported. © 1996 American Institute of Physics.
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73.61.Cw Elemental semiconductors
68.60.Dv Thermal stability; thermal effects

Highly active BaTi4O9/RuO2 photocatalyst by polymerized complex method

Matsato Kakihana, Momoko Arima, Tsugio Sato, Kiyohide Yoshida, Yohichi Yamashita, Matsatomo Yashima, and Masahiro Yoshimura

Appl. Phys. Lett. 69, 2053 (1996); http://dx.doi.org/10.1063/1.116877 (3 pages) | Cited 8 times

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A polymerized complex (PC) technique was utilized to prepare high‐purity barium tetratitanate (BaTi4O9) fine powders at a low temperature (700 °C). BaTi4O9 via the PC route, combined with RuO2, exhibited 2.4 times larger photocatalytic activities for the decomposition of water compared to those for a sample prepared by a solid‐state reaction method. A considerably large surface area (∼30 m2/g) of the BaTi4O9/RuO2 powder via the PC route, when compared with ∼5 m2/g for the solid‐state reaction powder, was supposed to be one of the key factors responsible for the high photocatalytic activity observed. © 1996 American Institute of Physics.
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81.20.-n Methods of materials synthesis and materials processing
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Annealing induced degradation of thermal SiO2: S center generation

A. Stesmans and V. V. Afanas’ev

Appl. Phys. Lett. 69, 2056 (1996); http://dx.doi.org/10.1063/1.116878 (3 pages) | Cited 16 times

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Direct electron spin resonance evidence of profound intrinsic point defect generation in standard thermal SiO2 during postoxidation (PO) vacuum annealing is presented. The detected isotropic signal (peak‐to‐peak width 4.5–5.8 G; g=2.0028 at 4.3 K) is assigned to S centers, tentatively ascribed previously to E′‐like defects (O3≡Si⋅ with one or two O replaced by Si). This process is advanced as atomic essence of the electrically well‐known oxide degradation during PO annealing in inert ambient, likely effectuated by interface‐initiated (volatile) SiO interaction. Coproduction of EX and Eδ′ defects is newly reported for thermal SiO2 as well. © 1996 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
76.30.Mi Color centers and other defects
81.65.Mq Oxidation

Cavity–dislocation interactions in Si–Ge and implications for heterostructure relaxation

D. M. Follstaedt, S. M. Myers, and S. R. Lee

Appl. Phys. Lett. 69, 2059 (1996); http://dx.doi.org/10.1063/1.116879 (3 pages) | Cited 8 times

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Cavities formed in Si and Ge and their alloys by He implantation and annealing are demonstrated to have a strong short‐range, attractive interaction with dislocations, with a binding energy calculated to be ≳100 eV when they overlap. Cavities can alter the relaxation of strained Si86Ge14 layers on Si in several ways: cavities placed at the interface enhance relaxation rates by increased nucleation of misfit dislocations, reduce the number of dislocations protruding into the substrate, and may increase relaxation at thermodynamic equilibrium.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Qq Microscopic defects (voids, inclusions, etc.)
68.60.Bs Mechanical and acoustical properties

Anomalous ion damage behavior in ZnSe

Kin Man Yu and E. D. Bourret‐Courchesne

Appl. Phys. Lett. 69, 2062 (1996); http://dx.doi.org/10.1063/1.116880 (3 pages) | Cited 6 times

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The structural properties of ZnSe damaged by 180 keV Zn ions are studied for a wide range of ion dose (1013–1016/cm2) using ion channeling techniques. We found that ZnSe cannot be rendered amorphous by implantation at either room temperature (RT) or liquid nitrogen temperature (LNT) in the range of doses investigated. For lower ion doses (1013–1014/cm2), ZnSe samples implanted at LNT result in less damage than those implanted at RT by as much as an order of magnitude. Moreover, no simple point defect or amorphous clusters are found in the implanted ZnSe. For high implant doses (≳1014/cm2), the samples are still monocrystalline but become highly defective with extended defects. Our results also suggests that point defects in the ZnSe created during implantation may be mobile at or below RT and that they may migrate rapidly under ion irradiation. © 1996 American Institute of Physics
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61.80.Jh Ion radiation effects
61.72.uj III-V and II-VI semiconductors
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
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