The stable Si‐terminated 3C‐SiC(001) surface exhibits a 2×1 reconstruction similar to Si(001)2×1, but with a longer dimer bond length, 2.49 vs 2.40 Å, due to a higher backbond strength. Molecular dynamics simulations show that deposition of Si adatoms on 3C‐SiC(001)2×1 results in the formation of a series of missing‐dimer‐row type reconstructions of the type h×2 where h=...,7,5,3 with increasing ad‐Si coverage. The basic building block for the h×2 surfaces is a two‐ad‐dimer unit. Si surface atoms below missing ad‐Si dimers between neighboring ad‐Si dimer pairs remain dimerized and 90° rotated. The most stable Si‐terminated h×2 structure is 3C‐SiC(001)3×2, which represents the closest‐packed array of two‐ad‐dimer units, with a dangling bond density of 0.67 per 3C‐SiC(001)1×1 unit cell. © 1996 American Institute of Physics.