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7 Oct 1996

Volume 69, Issue 15, pp. 2151-2298

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Single‐sided output Sn/Er/Yb distributed feedback fiber laser

W. H. Loh, L. Dong, and J. E. Caplen

Appl. Phys. Lett. 69, 2151 (1996); http://dx.doi.org/10.1063/1.117148 (3 pages) | Cited 9 times

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A distributed feedback laser based on Sn/Er/Yb fiber is demonstrated. Unlike previous Er/Yb DFB lasers, hydrogenation is not required for grating fabrication. Single‐sided output operation is obtained by directly splicing one end of the active grating to a broadband high reflecting grating, with 10 mW output power achieved for 110 mW pump power. Although hydrogenation is able to enhance the photosensitivity/grating strength further, this is actually found to degrade the laser efficiency due to increased losses. © 1996 American Institute of Physics.
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42.55.Wd Fiber lasers
42.81.Wg Other fiber-optical devices

Second‐harmonic generation using a fiber ring resonator with a LiNbO3 waveguide and a semiconductor optical amplifier

C. Q. Xu, K. Shinozaki, H. Okayama, and T. Kamijoh

Appl. Phys. Lett. 69, 2154 (1996); http://dx.doi.org/10.1063/1.117149 (3 pages) | Cited 3 times

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Optical second‐harmonic generation (SHG) using a fiber ring resonator has been demonstrated. A LiNbO3 waveguide with a periodically domain inverted structure and a semiconductor optical amplifier were used as the nonlinear and gain media, respectively. The quasiphase‐matched condition was satisfied simply by tuning an optical bandpass filter in the resonator. SHG was enhanced by a factor of 280. © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Mechanisms of carrier and energy injection in three‐terminal laser structures

Valery I. Tolstikhin and Gregory Yu. Khrenov

Appl. Phys. Lett. 69, 2157 (1996); http://dx.doi.org/10.1063/1.117150 (3 pages)

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The mechanisms of injection in the recently proposed three‐terminal laser structures and the ability to effectively tune the energy yield associated with a single injected electron are analyzed, by means of the ensemble Monte Carlo simulations, with respect to a high‐speed modulation using dynamic carrier heating. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Organic electroluminescent devices with improved stability

S. A. Van Slyke, C. H. Chen, and C. W. Tang

Appl. Phys. Lett. 69, 2160 (1996); http://dx.doi.org/10.1063/1.117151 (3 pages) | Cited 684 times

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Highly stable organic electroluminescent devices based on vapor‐deposited Alq thin films have been achieved. The improvement in stability is derived from several factors including: (1) a multilayer thin‐film structure with a CuPc stabilized hole‐injection contact, (2) a hole‐transport diamine layer using a naphthyl‐substituted benzidine derivative, and (3) an ac drive wave form. These emissive devices have shown an operational half‐lifetime of about 4000 h from an initial luminance of 510 cd/m2. © 1996 American Institute of Physics.
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78.60.Fi Electroluminescence
42.70.Jk Polymers and organics
85.60.Jb Light-emitting devices

Movable‐mask reactive ion etch process for thickness control in devices

R. L. Sandstrom, B. Pezeshki, F. Agahi, R. Martel, and J. G. Crockett

Appl. Phys. Lett. 69, 2163 (1996); http://dx.doi.org/10.1063/1.117152 (3 pages) | Cited 2 times

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By moving the substrate relative to a shadow mask in a reactive ion etching system, we are able to precisely tailor the thickness of critical layers. To minimize disturbing the plasma, all the mechanical components are kept below the anode. The system is highly reproducible, and can be programmed to yield arbitrary vertical profiles along one horizontal axis. Using silicon‐on‐insulator substrates, the resonance wavelength was modified as a function of position with better than 1 nm control in the vertical dimension. This technique should prove useful for optical devices where the thickness of the layers controls the device characteristics. © 1996 American Institute of Physics.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.65.Cf Surface cleaning, etching, patterning

Time‐resolved picosecond optical nonlinearity and all‐optical Kerr gate in poly (3‐hexadecylthiophene)

A. S. L. Gomes, Luciene Demenicis, D. V. Petrov, Cid B. de Araújo, Celso P. de Melo, and Rosa Souto‐Maior

Appl. Phys. Lett. 69, 2166 (1996); http://dx.doi.org/10.1063/1.117153 (3 pages) | Cited 4 times

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A time‐resolved anisotropic configuration exploiting the Z‐scan technique in a one color pump‐and‐probe arrangement was implemented to measure the time response and the value of the nondiagonal component of the third‐order nonlinear susceptibility of a chloroform solution of poly (3‐hexadecylthiophene). In addition, an all‐optical Kerr gate with picosecond response using the polymeric solution was implemented. © 1996 American Institute of Physics.
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42.65.An Optical susceptibility, hyperpolarizability
42.70.Jk Polymers and organics
42.79.Hp Optical processors, correlators, and modulators

Splitting of the first generalized Rayleigh mode in thin layers deposited on anisotropic media

André Mourad, Carl Desmet, and Jan Thoen

Appl. Phys. Lett. 69, 2169 (1996); http://dx.doi.org/10.1063/1.117154 (3 pages) | Cited 3 times

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The dispersion curve for the first generalized Rayleigh mode on the surface on an anisotropic substrate covered with an anisotropic layer is calculated. We show that, for directions in which both the Rayleigh and leaky Rayleigh waves can propagate on the uncovered substrate, the dispersion curve of this generalized mode splits into two branches at a certain value of the product of the wave number and the thickness. This splitting has to be taken into consideration when deriving layer properties from dispersion curves. For the derivation, we considered the anisotropic layer as a perturbation of the anisotropic substrate. An efficient computer program based on the extended Tiersten approach was written to numerically calculate the phase velocity as a function of frequency. © 1996 American Institute of Physics.
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43.35.Ns Acoustical properties of thin films
68.60.Bs Mechanical and acoustical properties
68.35.Gy Mechanical properties; surface strains

Target atomic number effect on the duration and conversion efficiency of ultrashort x‐ray pulses

J. F. Pelletier, M. Chaker, and J. C. Kieffer

Appl. Phys. Lett. 69, 2172 (1996); http://dx.doi.org/10.1063/1.117155 (3 pages) | Cited 11 times

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High‐density plasmas produced by 400 fs, 1018 W/cm2 laser pulses are characterized with a transmission grating spectrometer coupled to an x‐ray streak camera. Conversion efficiencies and durations of the soft x‐ray emission in the 0.1–1.2 keV energy range are analyzed for different target materials (Fe, Cu, Mo, Ta, and Pb). Our results show that the x‐ray emission duration is constant for the different materials, with an average value of 4 and 5.7 ps in the 0.8–1.2 keV and 0.2–0.3 keV ranges, respectively. The converstion efficiency is optimal for a Ta target and is about 0.3% for both energy ranges. © 1996 American Institute of Physics.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.70.La X-ray and γ-ray measurements

A proposed high‐gradient laser‐driven electron accelerator using crossed cylindrical laser focusing

Y. C. Huang and R. L. Byer

Appl. Phys. Lett. 69, 2175 (1996); http://dx.doi.org/10.1063/1.117156 (3 pages) | Cited 21 times

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We propose a dielectric‐based, crossed‐laser‐beam electron linear accelerator structure operating in a vacuum that is capable of providing 1 TeV electrons in approximately 1 km. The accelerator structure employs cylindrical laser focusing that allows for simplifying the fabrication process, accelerating more electrons, reducing the electron phase slip, minimizing the transverse wake‐fields, and spreading the structural thermal loading. We present a 0.7 GeV/m average‐gradient accelerator structure, repeated every 390 μm, subject to the laser damage fluence 2 J/cm2 on the optical components for 100 fs laser pulses. © 1996 American Institute of Physics.
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41.75.Fr Electron and positron beams
42.62.-b Laser applications
42.82.-m Integrated optics

Effect of reactive ion etching–generated sidewall roughness on propagation loss of buried‐channel silica waveguides

M. V. Bazylenko, M. Gross, and M. Faith

Appl. Phys. Lett. 69, 2178 (1996); http://dx.doi.org/10.1063/1.117157 (3 pages) | Cited 11 times

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Different mask materials (photoresist and amorphous silicon) and different sample temperatures can influence the roughness of sidewalls produced during reactive ion etching of silica. Buried‐channel waveguides with different microroughness on the core sidewalls (corrugation periods less than 1 μm) have been fabricated and characterized for their propagation loss at 1.3 μm wavelength. An increase in the sidewall roughness amplitude of around 0.05 μm results in an increase in the propagation loss of 0.2 dB/cm. Sidewall roughness with a larger period appears to have smaller effect on loss. © 1996 American Institute of Physics.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.82.Et Waveguides, couplers, and arrays

Growth of adherent diamond films on optically transparent sapphire substrates

Rajiv K. Singh, D. R. Gilbert, and J. Laveigne

Appl. Phys. Lett. 69, 2181 (1996); http://dx.doi.org/10.1063/1.117158 (3 pages) | Cited 6 times

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The growth of continuous adherent diamond thin films on optically transparent substrates is important for the development of corrosion and erosion resistant infrared windows for many applications. Until now, the growth of adherent diamond films on optically transparent substrates like sapphire has been unsuccessful due to the large thermal mismatch between the film and the substrate and the absence of an interfacial carbide ‘‘glue’’ layer. By employing a low temperature (500–550 °C), low pressure (∼1 Torr) electron–cyclotron–resonance chemical‐vapor‐deposition process, and utilizing a dispersed–particulate diamond suspension for nucleation, adherent diamond thin films have been fabricated on sapphire substrates. Raman spectroscopy showed that the diamond peak was shifted approximately 6 cm−1 above its equilibrium position, suggesting the presence of very large compressive stresses (∼3.2 GPa) in the film. © 1996 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.60.Bs Mechanical and acoustical properties

Effect of cyclic process on the {100}‐oriented texture growth of diamond film

S. H. Kim, Y. S. Park, I. T. Han, J.‐W. Lee, and W. S. Yun

Appl. Phys. Lett. 69, 2184 (1996); http://dx.doi.org/10.1063/1.117159 (3 pages) | Cited 6 times

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The {100}‐oriented texture growth of diamond film on (100) Si substrates (1×1 cm2) has been achieved by a three‐step procedure (carburization→nucleation→growth) in a microwave‐ plasma‐enhanced chemical vapor deposition (MPECVD) system. The surface morphology is found to be strongly affected by the cyclic process applied during the nucleation step. Furthermore, the density of {100}‐oriented grains as well as the coverage area are enhanced by the application of the cyclic process merely during the nucleation step. We also observed the increase in the nucleation density by the cyclic process. This increase may be the origin for the increase in the density of the {100}‐oriented grains. © 1996 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Substrate dependence in the growth of epitaxial Pb1−xLaxTiO3 thin films

Y. Kim, A. Erbil, and L. A. Boatner

Appl. Phys. Lett. 69, 2187 (1996); http://dx.doi.org/10.1063/1.117160 (3 pages) | Cited 3 times

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The metalorganic chemical vapor deposition (MOCVD) technique has been applied to the growth of epitaxial Pb1−xLaxTiO3 (PLT) thin films with x=0.28. By first introducing an initial TiO2 layer, three‐dimensional epitaxial PLT films were grown on the (100) surface of MgO substrate. For both KTaO3 (100) and Al2O3 (0001) substrates, heteroepitaxy was achieved without the introduction of TiO2 as the initial, intervening layer between the PLT film and the substrate. On Al2O3 substrates, PLT films with a [111] preferred orientation were grown with a good epitaxial in‐plane relationship. © 1996 American Institute of Physics.
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68.55.-a Thin film structure and morphology
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Infrared absorption in silicon at elevated temperatures

H. Rogne, P. J. Timans, and H. Ahmed

Appl. Phys. Lett. 69, 2190 (1996); http://dx.doi.org/10.1063/1.117161 (3 pages) | Cited 14 times

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Isothermal electron beam heating combined with in situ optical measurements has been used to measure the temperature dependence of the spectral emissivity of lightly doped silicon in the range 345–723 °C for wavelengths between 1 and 9 μm. The absorption coefficient was deduced from the spectral emissivity and compared with the predictions of a model including phonon‐assisted processes involved in interband transitions, free‐carrier absorption, and lattice absorption. The experimental data agree well with the model’s results. © 1996 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.30.Am Elemental semiconductors and insulators
05.70.Ce Thermodynamic functions and equations of state

Preparation of BaTiO3 thin films by backside pulsed ion‐beam evaporation

T. Sonegawa, C. Grigoriu, K. Masugata, K. Yatsui, Y. Shimotori, S. Furuuchi, and H. Yamamoto

Appl. Phys. Lett. 69, 2193 (1996); http://dx.doi.org/10.1063/1.117162 (3 pages) | Cited 12 times

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Barium titanate (BaTiO3) thin films were successfully prepared in situ on Al/SiO2/Si(100) substrates by backside deposition from intense, pulsed, ion‐beam evaporation using a 1.3 MeV, 50 ns, 25 J/cm2 ion beam. Good morphology of the films prepared was observed, where no droplets appear compared to normal frontal‐side deposition. The deposition rates were typically 100 nm/shot. The films were perovskite polycrystals. The capacitance of the thin films (at 1 kHz) increased from 3 to 10 nF/mm2 with increasing substrate temperature from 25 to 250 °C, respectively. © 1996 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Detection of hot electron current with scanning hot electron microscopy

F. Vázquez, D. Kobayashi, I. Kobayashi, Y. Miyamoto, K. Furuya, T. Maruyama, M. Watanabe, and M. Asada

Appl. Phys. Lett. 69, 2196 (1996); http://dx.doi.org/10.1063/1.117163 (3 pages) | Cited 1 time

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Scanning hot electron microscopy (SHEM) has been proposed as an experimental technique which allows for detection of hot electrons emitted from a subsurface semiconductor structure, thus making it possible to obtain the spatial distribution of hot electrons in a device. Here we present the experimental evidence of SHEM operation. Hot electrons with energies of 3 eV are injected by means of a Si/CaF2/Au heterostructure and subsequently detected at the tip of a scanning tunneling microscope in the SHEM configuration. The measured hot electron current was approximately 4 pA for a tunnel current of 5 nA. These results, although still of a preliminary nature, show the potential of SHEM as a technique suitable for the visualization of electron wave effects in semiconductor structures. © 1996 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
07.79.-v Scanning probe microscopes and components
73.50.Fq High-field and nonlinear effects

Time‐resolved optical waveguide spectroscopy: Application to a study of the switching process of a nematic liquid crystal under the influence of an electric field

M. Mitsuishi, S. Ito, M. Yamamoto, and W. Knoll

Appl. Phys. Lett. 69, 2199 (1996); http://dx.doi.org/10.1063/1.117164 (3 pages) | Cited 6 times

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We report a novel optical spectroscopy, time‐resolved optical waveguide spectroscopy. This technique was developed in order to investigate the transient behavior of the dielectric constants of thin dielectric medium, e.g., changes of the refractive indices induced by an external trigger such as light, electric field, etc. Optical guided waves propagate in a thin dielectric medium whose optical properties, in particular film thickness and anisotropic dielectric tensor diagonals in molecular and laboratory coordinates, can be evaluated with high accuracy. We employed this technique to a nematic liquid crystal (5CB) as a thin dielectric medium, and molecular reorientation on the switching process was observed through the recording of transient waveguide patterns. © 1996 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Determination of the oxide‐precipitate–silicon‐matrix interface energy by considering the change of precipitate morphology

S. Senkader, G. Hobler, and C. Schmeiser

Appl. Phys. Lett. 69, 2202 (1996); http://dx.doi.org/10.1063/1.117165 (3 pages) | Cited 6 times

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A model of strain relief via interactions with point defects during oxygen precipitation is presented. Assuming that precipitation of oxygen is diffusion limited and that it evolves in such a way that the total system free energy is minimized the governing relations describing strain relief are obtained. The impact of strain and of point defects on the precipitate morphology is adressed. The model is used to calculate the precipitate–matrix interface energy using published data on precipitate morphology changes. The results suggest that the interface energy should be much larger than the presently well‐accepted values. © 1996 American Institute of Physics.
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81.10.Fq Growth from melts; zone melting and refining
81.30.Mh Solid-phase precipitation
61.72.Yx Interaction between different crystal defects; gettering effect

Pressure induced structural transitions in nanometer size particles of PbS

S. B. Qadri, J. Yang, B. R. Ratna, E. F. Skelton, and J. Z. Hu

Appl. Phys. Lett. 69, 2205 (1996); http://dx.doi.org/10.1063/1.117166 (3 pages) | Cited 73 times

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At elevated pressure, PbS undergoes a first order phase transition from the NaCl or B1 structure to an orthorhombic structure. The effects of particle sizes in the nanometer range on this transition have been investigated using energy‐dispersive x‐ray diffraction of synchrotron produced wiggler radiation. Relative to the bulk crystals, the onset of transition pressure showed a significant increase with decreasing particle size. The results also show that compressibility increases with decreasing particle size: this increase is continuous through the phase transition. © 1996 American Institute of Physics.
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81.40.Vw Pressure treatment
61.46.-w Structure of nanoscale materials
61.50.Ks Crystallographic aspects of phase transformations; pressure effects

Ti/MgO superlattices epitaxially grown on sapphire (00.1) and MgO(001) substrates

Tetsuo Kado

Appl. Phys. Lett. 69, 2208 (1996); http://dx.doi.org/10.1063/1.117167 (3 pages) | Cited 2 times

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Epitaxial metal/insulator superlattices composed of Ti and MgO have been prepared on MgO(001) buffer layers grown on MgO(001) substrates and MgO(111) buffer layers grown on sapphire (00.1) substrates by electron beam evaporation in ultrahigh vacuum. 1–4‐nm‐thick Ti layers and 1–2‐nm‐thick MgO layers have been grown alternatively for 20 periods on the buffer layers at 273 K and at a growth rate below 0.02 nm/s. The reflection high energy electron diffraction and x‐ray diffraction measurements reveal that the crystal structures of Ti in the superlattices grown on MgO(001) and on sapphire (00.1) substrates are face‐centered tetragonal structure and hexagonal closed‐packed structure, respectively. © 1996 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

A field‐sensitive photoconductive probe for sampling through passivation layers

Jiunn‐Ren Hwang, Richard K. Lai, John Nees, Ted Norris, and John F. Whitaker

Appl. Phys. Lett. 69, 2211 (1996); http://dx.doi.org/10.1063/1.117168 (3 pages) | Cited 4 times

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A field‐sensitive photoconductive sampling technique has been demonstrated in measurements performed through an insulating layer without the need for conductive contact. Sampled signals are sensed by a virtual‐ground, floating‐gate amplifier without draining charge from the device under test or the photoconductive switch. The minimum detectable signal is 2.5 μV/Hz1/2 with a spatial resolution of 7 μm, while the sampling bandwidth is essentially that observed using photoconductive sampling with a conductive contact to the device under test. The photovoltaic and shot current noise are negligible in comparison with the lock‐in amplifier noise since the current flowing in this high‐impedance, floating‐gate probe is negligible. © 1996 American Institute of Physics.
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85.60.Bt Optoelectronic device characterization, design, and modeling
73.50.Pz Photoconduction and photovoltaic effects
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Oxynitride films formed by low energy NO+ implantation into silicon

J. A. Diniz, P. J. Tatsch, and M. A. A. Pudenzi

Appl. Phys. Lett. 69, 2214 (1996); http://dx.doi.org/10.1063/1.117169 (2 pages) | Cited 13 times

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Oxynitride (SiOxNy) insulators have been obtained by low‐energy nitric oxide ion (NO+) implantation in Si substrates prior to thermal oxidation. Characterization by Fourier transform infrared (FTIR) and secondary ion mass spectrometry (SIMS) analyses reveal the presence of Si–O, Si–N, and Si–N–O bonds in the high quality 37 nm silicon oxynitride films. The dielectric constant=5.5, effective charge density=7×1010 cm−2 and breakdown E‐fields of 3 MV/cm were determined by capacitance–voltage (C–V) and current–voltage (I–V) measurements, respectively, indicating that the SiOxNy films formed are suitable gate insulators for metal‐oxide‐semiconductor (MOS) devices. © 1996 American Institute of Physics.
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85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.uf Ge and Si
85.30.De Semiconductor-device characterization, design, and modeling
FREE

Time‐resolved measurements of the photoluminescence of Cu‐quenched porous silicon

N. Rigakis, Z. Yamani, L. H. AbuHassan, J. Hilliard, and M. H. Nayfeh

Appl. Phys. Lett. 69, 2216 (1996); http://dx.doi.org/10.1063/1.117170 (3 pages) | Cited 6 times

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We have performed time‐resolved photoluminescence measurements in the submicrosecond to microsecond time regime on porous silicon samples under several diffusion‐based chemical treatments with copper ion solutions that produce varying crystallite surface conditions. Our results for short emission wavelengths emanating from high lying states indicate that Cu acts largely on the population process commencing from the top of the well at short relaxation time scales immediately after excitation, and to less extent on the radiating states in the microsecond regime. © 1996 American Institute of Physics.
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78.55.Mb Porous materials
78.47.-p Spectroscopy of solid state dynamics

Electron velocity saturation in quantized silicon carbide inversion layers

F. Gámiz, J. B. Roldán, J. A. López‐Villanueva, and J. E. Carceller

Appl. Phys. Lett. 69, 2219 (1996); http://dx.doi.org/10.1063/1.117171 (3 pages) | Cited 5 times

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Results of electron mobility calculations at room temperature in quantized cubic silicon carbide (β‐SiC) inversion layers are reported. A comparison with silicon mobility curves is provided. Drift velocities both at room and higher temperatures are calculated by Monte Carlo simulations including electron quantization and Coulomb scattering, in addition to phonon and surface roughness scattering. We have also observed that steady‐state drift velocity curves show a maximum that decreases as the transverse electric field increases, due to the greater importance of intervalley scattering with respect to polar phonon scattering. © 1996 American Institute of Physics.
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72.20.Fr Low-field transport and mobility; piezoresistance
73.50.Dn Low-field transport and mobility; piezoresistance
72.80.Jc Other crystalline inorganic semiconductors

Nanometer‐scale local oxidation of silicon using silicon nitride islands formed in the early stages of nitridation

Michiharu Tabe and Takeshi Yamamoto

Appl. Phys. Lett. 69, 2222 (1996); http://dx.doi.org/10.1063/1.117172 (3 pages) | Cited 22 times

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We have studied the silicon nitride (SiN) nucleation on the Si(111) 7×7 surface due to thermal nitridation with scanning tunneling microscopy (STM), and applied the resultant small SiN islands to oxidation masks in local oxidation of Si (LOCOS) process for fabrication of nanometer‐scale Si structures. The nitrides appear as dark regions in STM images and the average size increases (the density decreases) with increasing nitridation temperature. When the nitrided surface is successively oxidized in the etching mode with a reaction of Si+O2→SiO↑, the nitrides turn to bright regions by selective etching of the clean 7×7 regions and the brightness (height) increases with increasing etching time. Thus, the microscopic LOCOS process is demonstrated and nanometer‐scale Si pillars are fabricated. © 1996 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.65.Cf Surface cleaning, etching, patterning
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
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