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4 Nov 1996

Volume 69, Issue 19, pp. 2795-2939

Page 2 of 2 Pages Previous Page | Jump to Page

Phase transformations during microcutting tests on silicon

B. V. Tanikella, A. H. Somasekhar, A. T. Sowers, R. J. Nemanich, and R. O. Scattergood

Appl. Phys. Lett. 69, 2870 (1996); http://dx.doi.org/10.1063/1.117346 (3 pages) | Cited 16 times

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Controlled slow‐speed microcutting tests were made on single crystal silicon. Micro‐Raman spectroscopy confirmed the presence of amorphous silicon within the microcutting grooves as well as in the debris particles removed from the grooves. These results indicate that pressure‐induced transformation to metallic silicon can occur during microcutting and the ductile metallic phase will facilitate the cutting process. Raman spectroscopy further indicated the presence of large residual tensile strains in some areas of the microcutting grooves. © 1996 American Institute of Physics.
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64.70.K- Solid-solid transitions
81.40.Lm Deformation, plasticity, and creep
81.05.Cy Elemental semiconductors

Electrical characteristics of metal/AlN/n‐type 6H–SiC(0001) heterostructures

M. O. Aboelfotoh, R. S. Kern, S. Tanaka, R. F. Davis, and C. I. Harris

Appl. Phys. Lett. 69, 2873 (1996); http://dx.doi.org/10.1063/1.117347 (3 pages) | Cited 21 times

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Metal/AlN/n‐type 6H–SiC(0001) heterostructures have been prepared by growing wurtzite AlN layers on vicinal 6H–SiC(0001) using gas‐source molecular beam epitaxy. High‐resolution transmission electron microscopy results show that the interface between the AlN layer and the Si‐terminated 6H–SiC substrate is microstructurally abrupt, but contains defects originating at step sites on the 6H–SiC surface. The interface is found to have a low density of trapped charges of 1×1011 cm−2 at room temperature without any postgrowth treatment. This value is comparable to those reported for thermally grown and deposited oxides on n‐type 6H–SiC(0001), and indicates the formation of a high quality interface. © 1996 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
68.35.Ct Interface structure and roughness

HgCdTe and CdTe(1 1 3)B growth on Si(112)5° off by molecular beam epitaxy

M. Kawano, A. Ajisawa, N. Oda, M. Nagashima, and H. Wada

Appl. Phys. Lett. 69, 2876 (1996); http://dx.doi.org/10.1063/1.117348 (3 pages) | Cited 11 times

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CdTe(1 1 3)B epilayers were grown on Si substrates oriented (112)5° off toward the [1 1 1] direction by molecular beam epitaxy (MBE). A Zn irradiation process was developed in order to obtain a (1 1 3)B face. HgCdTe(1 1 3)B epilayers were grown on 20 μm‐thick CdTe/Si(112) 5° off, and characterized. These layers have double‐crystal x‐ray rocking curves with full width at half‐maximum as low as 64 arc s, and etch pit densities of 4.4×106 cm−2 and 2.6×105 cm−2 for as‐grown and thermal‐cycle annealed films, respectively. Photodiodes were also fabricated to demonstrate the capability of large‐area MBE‐HgCdTe/Si focal‐plane arrays. © 1996 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
85.60.Dw Photodiodes; phototransistors; photoresistors

Surface lifetimes of Ga and growth behavior on GaN (0001) surfaces during molecular beam epitaxy

S. Guha, N. A. Bojarczuk, and D. W. Kisker

Appl. Phys. Lett. 69, 2879 (1996); http://dx.doi.org/10.1063/1.117349 (3 pages) | Cited 34 times

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We report a study of the desorption behavior of Ga on the GaN(0001) surface and the growth behavior of GaN during molecular beam epitaxy. A desorption activation energy of 2.2±0.2 eV is measured for Ga adatoms. Porous columnar features in the GaN microstructure are observed that are enhanced by higher growth temperatures and eliminated by growing Mg or Si doped GaN. We propose a model for this observation. © 1996 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Double injection and negative resistance in stripe‐geometry oxide‐aperture AlyGa1−yAs–GaAs–InxGa1−xAs quantum well heterostructure laser diodes

J. J. Wierer, S. A. Maranowski, N. Holonyak, P. W. Evans, and E. I. Chen

Appl. Phys. Lett. 69, 2882 (1996); http://dx.doi.org/10.1063/1.117350 (3 pages) | Cited 4 times

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Data are presented demonstrating double injection and negative resistance in stripe‐geometry oxide‐aperture AlyGa1−yAs–GaAs–InxGa1−xAs quantum well heterostructure lasers. The buried oxide laser structures are defined, in current and cavity, by laterally oxidizing the higher Al composition upper and lower cladding layers from a mesa edge (a ridge), thus, forming a narrow oxide‐defined buried aperture (∼2μm). Post fabrication annealing (425 °C in N2) removes the negative resistance, indicating that the crystal growth and oxidation processes introduce products such as H and OH in the active region that compensate the dopants. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors

Tunneling current noise in thin gate oxides

G. B. Alers, K. S. Krisch, D. Monroe, B. E. Weir, and A. M. Chang

Appl. Phys. Lett. 69, 2885 (1996); http://dx.doi.org/10.1063/1.117351 (3 pages) | Cited 20 times

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We have examined fluctuations in the tunneling current of 3.5 nm SiO2 barriers for voltages in the direct tunneling regime. We find a 1/f power law for the spectral density of the fluctuations where f is the frequency. This 1/f noise can be attributed to fluctuations of a trap assisted tunneling current through the oxide that causes current noise but is not evident in the I–V curves. We suggest that this noise may be a more sensitive probe of trap assisted tunneling and degradation in thin oxides than other measures. At voltages above a threshold of 2.5 V, we observe the reversible onset of non‐Gaussian current transients in the noise. The onset of these current transients can be related to a transition in the spacial uniformity of the tunneling current density that may result in eventual breakdown of the oxide. © 1996 American Institute of Physics.
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73.40.Gk Tunneling
73.50.Td Noise processes and phenomena
85.30.De Semiconductor-device characterization, design, and modeling

Meyer–Neldel behavior of deep level parameters in heterojunctions to Cu(In,Ga)(S,Se)2

R. Herberholz, T. Walter, C. Müller, T. Friedlmeier, H. W. Schock, M. Saad, M. Ch. Lux‐Steiner, and V. Alberts

Appl. Phys. Lett. 69, 2888 (1996); http://dx.doi.org/10.1063/1.117352 (3 pages) | Cited 24 times

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Admittance spectroscopy was measured on Cu(In,Ga)(S,Se)2 thin film and single crystal heterojunctions. The emission rates of defects for various near‐stoichiometric compositions follow a Meyer–Neldel rule, showing increasing attempt‐to‐escape frequencies with increasing defect depth. Defects in highly (In,Ga)‐rich material showed lower attempt‐to‐escape frequencies and follow a separate Meyer–Neldel relation. Repetitive air annealing of a CuInSe2 heterojunction revealed a shift of the depth and capture cross section of an observed defect. © 1996 American Institute of Physics.
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71.55.Gs II-VI semiconductors
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

The origin of room temperature luminescence in Si–Ge quantum wells: The case for an interface localization model

R. J. Turton and M. Jaros

Appl. Phys. Lett. 69, 2891 (1996); http://dx.doi.org/10.1063/1.117353 (3 pages) | Cited 7 times

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Photoluminescence from a Gem–Sin–Gem structure has recently been demonstrated at room temperature by Gail et al. [Appl. Phys. Lett. 66, 2978 (1995)]. Experimental measurements have shown that this luminescence is associated with the fourfold degenerate conduction minima which lie in the plane of the interface. In this letter, we report full‐scale microscopic calculations on both perfect and imperfect structures of this type which demonstrate that these results cannot be explained either by a ‘‘zone‐folding’’ or an alloy scattering model. We propose an alternative mechanism which links the luminescence to anomalous localization at the heterointerfaces. © 1996 American Institute of Physics.
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78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
73.20.Fz Weak or Anderson localization

Failure phenomena and mechanisms of polymeric light‐emitting diodes: Indium–tin–oxide damage

Ching‐Ian Chao, Kuen‐Ru Chuang, and Show‐An Chen

Appl. Phys. Lett. 69, 2894 (1996); http://dx.doi.org/10.1063/1.117354 (3 pages) | Cited 33 times

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Indium–tin–oxide (ITO) coated on a glass plate as the transparent electrode in polymeric light‐emitting diodes (LEDs) generates some volcano‐like patterns during use especially at a higher applied electric field strength. Such an ITO damage phenomenon is independent of Joule heat, conjugation structure of the polymer, and light‐emission process, but only dependent on the applied electric field strength. The ITO damage, which results from a self‐decomposition reaction, can cause a reduction of lifetime of the device. © 1996 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence

Magnetoresistance size effects in a three‐dimensional lattice of InSb quantum dots

S. G. Romanov, A. V. Fokin, D. K. Maude, and J. C. Portal

Appl. Phys. Lett. 69, 2897 (1996); http://dx.doi.org/10.1063/1.117355 (3 pages) | Cited 2 times

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The magnetotransport was studied on three‐dimensional lattices of weakly coupled InSb quantum dots (QDs) for different regimes of conductivity. Classical negative magnetoresistance was observed both in high‐ and low‐temperature regimes; for the latter it is accompanied by quantum size effect. The correlation with the geometry of the dot lattice and its ordering was found. © 1996 American Institute of Physics.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.61.Ey III-V semiconductors

Visible photoluminescence from pressure annealed intrinsic Czochralski‐grown silicon

G. P. Karwasz, A. Misiuk, M. Ceschini, and L. Pavesi

Appl. Phys. Lett. 69, 2900 (1996); http://dx.doi.org/10.1063/1.117356 (3 pages) | Cited 3 times

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Visible luminescence from thermal treated intrinsic Czochralski‐grown silicon is reported. Oxygen precipitates were formed in a nearly oversaturated silicon by a two‐step thermal treatment with auxiliary use of high pressures. A wide photoluminescence band peaked at about 2.3 eV is observed in those samples for which the first treatment was performed at a relatively high temperature and which show a higher amount of oxygen precipitates and oxygen related defects. Scanning electron microscopy of the best performing samples show the presence of submicron conglomerates on the surface. We have tentatively attributed the luminescence emission to the defects in the suboxide SiOx phase formed in the oxygen precipitates. © 1996 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
81.10.Fq Growth from melts; zone melting and refining

Application of liftoff low‐temperature‐grown GaAs on transparent substrates for THz signal generation

H.‐M. Heiliger, M. Vossebürger, H. G. Roskos, H. Kurz, R. Hey, and K. Ploog

Appl. Phys. Lett. 69, 2903 (1996); http://dx.doi.org/10.1063/1.117357 (3 pages) | Cited 16 times

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Epitaxial liftoff (ELO) of low‐temperature‐grown GaAs (LT‐GaAs) is employed to fabricate (sub)picosecond photoconductive switches on optically transparent substrates for THz applications. Glass is selected as a substrate for on‐wafer probes while sapphire is chosen for free‐space antennas. © 1996 American Institute of Physics.
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07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment
72.80.Ey III-V and II-VI semiconductors
84.40.-x Radiowave and microwave (including millimeter wave) technology
85.60.Bt Optoelectronic device characterization, design, and modeling

Stress reduction and interface quality of buried Sb δ doping layers on Si(001)

J. Falta, D. Bahr, A. Hille, G. Materlik, M. Kammler, and M. Horn‐von Hoegen

Appl. Phys. Lett. 69, 2906 (1996); http://dx.doi.org/10.1063/1.117319 (3 pages) | Cited 7 times

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We have investigated the width dependence of Sb delta (δ) doping layers grown by Si solid phase epitaxy (SPE) on the Sb surface reconstruction prior to Si deposition. Depending on the Sb adsorption conditions a 2×1 and a 2×n surface reconstruction is observed. Measurements of crystal truncation rods and x‐ray standing waves show a drastically reduced interface roughness and a better crystal quality for δ layers grown on Sb:Si(001)−2×n substrates in comparison to Sb:Si(001)‐2×1, which we attribute to reduced surface stress of the Sb:Si(001)‐2×n reconstruction. © 1996 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
68.35.Ct Interface structure and roughness
61.05.C- X-ray diffraction and scattering

Growth of YBa2Cu3O7−δ–Ag thin films (Tc(0)=89 K) by pulsed laser ablation on polycrystalline Ba2LaNbO6: A new perovskite ceramic substrate

J. Kurian, H. K. Varma, J. Koshy, S. P. Pai, and R. Pinto

Appl. Phys. Lett. 69, 2909 (1996); http://dx.doi.org/10.1063/1.117320 (3 pages) | Cited 5 times

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Synthesis and characterization of Ba2LaNbO6 which is a new substrate material for YBa2Cu3O7−δ superconductor are reported. Ba2LaNbO6 has a complex cubic perovskite structure (A2BB′O6) with a lattice constant a=8.60 Å. No detectable chemical reaction between YBa2Cu3O7−δ and Ba2LaNbO6 was observed even under severe heat treatment. The dielectric constant and loss factor of Ba2LaNbO6 are in a range suitable for its use as a substrate for microwave applications. Superconducting YBa2Cu3O7−δ–Ag thin films are grown in situ on polycrystalline Ba2LaNbO6 by pulsed laser ablation method. The film exhibited (00l) orientation of an orthorhombic YBa2Cu3O7−δ phase. The films gave a Tc onset of 91 K and Tc(0) of 89 K. © 1996 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
81.15.Fg Pulsed laser ablation deposition
74.72.-h Cuprate superconductors

Properties of DX center in Te‐doped In1−xG axAsyP1−y/GaAs0.61 P/d0.39

Byung‐Deuk Jeon, Ho Ki Kwon, and Byung‐Doo Choe

Appl. Phys. Lett. 69, 2912 (1996); http://dx.doi.org/10.1063/1.117321 (3 pages) | Cited 1 time

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We report that the Te donor forms a deep level and acts as a DX center in In1−xGaxAsyP1−y/GaAs0.61P0.39. The characteristics of Te‐related deep level is investigated by deep‐level transient spectroscopy and thermally stimulated capacitance measurements. The deep level has a thermal activation energy of 0.14±0.01 eV regardless of the alloy composition of In1−xGaxAsyP1−y. Persistent photoconductivity is observed at low temperature in all Te‐doped In1−xGaxAsyP1−y/GaAs0.61P0.39 samples. The compositional dependence of deep trap density is explained by the energy difference between the conduction band minimum and the DX level. © 1996 American Institute of Physics.
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71.55.Eq III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Enhancement of the 77 K irreversibility field and critical current density of (Bi,Pb)2Sr2Ca 2Cu3Ox tapes by manipulation of the final cooling rate

J. A. Parrell, D. C. Larbalestier, G. N. Riley, Q. Li, R. D. Parrella, and M. Teplitsky

Appl. Phys. Lett. 69, 2915 (1996); http://dx.doi.org/10.1063/1.117322 (3 pages) | Cited 40 times

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By manipulating the cooling rate from the final heat treatment, we have raised the 77 K, self‐field critical current density (Jc) of multifilament (Bi,Pb)2Sr2Ca2Cu3Ox (2223) tapes by a factor of 3, and the irreversibility field (H∗) by more than 50%. The Jc of samples cooled in 7.5% O2 from their reaction temperature of 825 °C increased from ∼8 to ∼24 kA/cm2 and H∗(77 K) increased from ∼120 to ∼200 mT as the cooling rate was decreased from 5 to 0.016 °C/min. The results unambiguously show that the flux pinning properties of 2223 tapes can be improved by simple changes in wire processing. © 1996 American Institute of Physics.
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74.25.Sv Critical currents
74.72.-h Cuprate superconductors
84.71.Mn Superconducting wires, fibers, and tapes

Ramp‐type YBa2Cu3O7−δ Josephson junctions with high characteristic voltage, fabricated by a new, completely in situ, growth technique

M. D. Strikovskiy and A. Engelhardt

Appl. Phys. Lett. 69, 2918 (1996); http://dx.doi.org/10.1063/1.117323 (3 pages) | Cited 6 times

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We have fabricated YBa2Cu3O7−δ/PrBa2Cu3O7−δ/YBa2Cu3O7−δ ramp‐type Josephson junctions with high characteristic voltage Vc=IcRn at a temperature of 77 K. A microshadow mask technique was used to grow completely in situ a ramp‐type multilayer structure. Junctions with barrier thicknesses of about 13 and 45 nm were characterized. Junctions with a thicker barrier exhibited supercurrent up to 80 K and showed a resistively shunted‐junction‐like current voltage characteristics with a Vc as high as ∼1.5 mV at 77 K and 16 mV at 15 K. Junctions with a thinner barrier worked up to 90 K and exhibited the ac Josephson effect at 77 K under 8.9 GHz microwave radiation. © 1996 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
85.25.Cp Josephson devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Fundamental operation of single‐flux‐quantum circuits using coplanar‐type high‐Tc SQUIDs

Hiroyuki Fuke, Kazuo Saitoh, Tadashi Utagawa, and Youichi Enomoto

Appl. Phys. Lett. 69, 2921 (1996); http://dx.doi.org/10.1063/1.117324 (3 pages) | Cited 5 times

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We have fabricated coplanar type dc SQUIDs using NdBa2Cu3Oy superconducting thin films and operated fundamental single‐flux‐quantum (SFQ) circuits. The Josephson junctions were made by the narrow‐focused ion beam irradiation technique. For a 145 μm wide and 10 μm long logic SQUID having a critical current of 105 μA and an inductive parameter (βL) of 28, a store and a restore of the flux quantum have been demonstrated at temperatures of 4.2–30 K. These operations were performed with an input pulsewidth of 5 ns (5 ns was the shortest input pulse width available from our function generating equipment). These results show experimentally the possibility of high speed operation in all high‐Tc superconducting digital circuits. © 1996 American Institute of Physics.
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85.25.Hv Superconducting logic elements and memory devices; microelectronic circuits
74.78.-w Superconducting films and low-dimensional structures
85.25.Dq Superconducting quantum interference devices (SQUIDs)

Chemical inhomogeneity and reactions of BiSrCaCuO surfaces detected by synchrotron imaging spectromicroscopy

Y. Hwu, N.‐F. Cheng, S.‐D. Lee, C.‐Y. Tung, P. Alméras, and H. Berger

Appl. Phys. Lett. 69, 2924 (1996); http://dx.doi.org/10.1063/1.117325 (3 pages) | Cited 1 time

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A microscopic chemical analysis of BiSrCaCuO (BSCCO) 2212 single crystals was performed with an unprecedented combination of high (submicron) lateral resolution and high energy resolution (100 meV or better). These performances, achieved with imaging synchrotron spectromicroscopy, enabled us to detect in a very small fraction of the investigated specimens, morphological and chemical inhomogeneities. Specifically, we found deviations from stoichiometry in the surface Sr content which have a subtle effect on the chemical environment of at least one other element, Ca. The different chemical environment was found to influence surface chemical reactions. © 1996 American Institute of Physics.
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74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.72.-h Cuprate superconductors
68.37.Xy Scanning Auger microscopy, photoelectron microscopy

A domain size effect in the magnetic hysteresis of NiZn‐ferrites

P. J. van der Zaag, P. J. van der Valk, and M. Th. Rekveldt

Appl. Phys. Lett. 69, 2927 (1996); http://dx.doi.org/10.1063/1.117326 (3 pages) | Cited 25 times

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The domain size and the ac‐hysteresis of NiZn‐ferrites have been investigated as a function of grain size. It is found that the ac‐hysteresis or energy dissipation at MHz frequencies is substantially reduced in fine‐grained, monodomain NiZn‐ferrites, which is attributed to the absence of intragranular domain walls. © 1996 American Institute of Physics.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Gg Ferrimagnetics
61.72.Mm Grain and twin boundaries

A microelectromechanical‐based magnetostrictive magnetometer

R. Osiander, S. A. Ecelberger, R. B. Givens, D. K. Wickenden, J. C. Murphy, and T. J. Kistenmacher

Appl. Phys. Lett. 69, 2930 (1996); http://dx.doi.org/10.1063/1.117327 (2 pages) | Cited 13 times

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The principles of operation of a microelectromechanical (MEMS)‐based magnetometer designed on the magnetoelastic effect are described. The active transduction element is a commercial (001) silicon microcantilever coated with an amorphous thin film of the giant magnetostrictive alloy Terfenol‐D [(Dy0.7Te0.3)Fe2]. In addition to the magnetostrictive transducer, basic components of the magnetometer include: (a) mechanical resonance of the coated‐microcantilever through coupling to an ac magnetic field; and (b) detection by optical beam deflection of the microcantilever motion utilizing a laser diode source and a position‐sensitive detector. Currently, the sensitivity of this MEMS‐based magnetostrictive magnetometer is ∼1μT. © 1996 American Institute of Physics.
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07.55.Ge Magnetometers for magnetic field measurements
07.10.Cm Micromechanical devices and systems
75.80.+q Magnetomechanical effects, magnetostriction

Electrical measurements of iodine doped amorphous diamondlike films grown on silicon substrate

M. Allon‐Alaluf and N. Croitoru

Appl. Phys. Lett. 69, 2932 (1996); http://dx.doi.org/10.1063/1.117328 (3 pages) | Cited 1 time

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By incorporating iodine gas during the films’ deposition, amorphous diamondlike carbon (a:DLC) films were doped and a:I–DLC films were obtained. Optical measurements showed that iodine affects the optical band gap, decrease it from 1.1 to 0.78 eV. Iodine doping decreased the resistivity by four orders of magnitude, from 108 to 104 Ω cm. Iodine doped film was found to have a larger p doping than a:DLC films. The I–V characteristics of devices made of doped and undoped films grown on silicon substrates, were studied. ac measurements of these devices have shown that the p doped a:DLC films behave as semiconductors, and give a rectification with n‐type silicon. © 1996 American Institute of Physics.
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73.61.Jc Amorphous semiconductors; glasses
78.66.Jg Amorphous semiconductors; glasses

Nonlinear space‐charge waves in a relativistic electron beam drifting along a Kerr‐like medium

T. Ueda and T. Shiozawa

Appl. Phys. Lett. 69, 2935 (1996); http://dx.doi.org/10.1063/1.117329 (3 pages) | Cited 2 times

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We investigate the nonlinear characteristics of space‐charge waves, which propagate along a relativistic electron beam drifting near the surface of a semi‐infinite Kerr‐like medium, under the condition that the drift velocity of the electron beam does not exceed the Cherenkov threshold. On the basis of the linear fluid model for the electron beam and the stationary wave analysis, we obtain some interesting features for the nonlinear space‐charge waves such as power dependence of wave numbers and hysteresis characteristics. © 1996 American Institute of Physics.
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42.55.Ah General laser theory
41.75.Ht Relativistic electron and positron beams
FREE

Comment on ‘‘Amorphous films formed by solid‐state reaction in an immiscible Y–Mo system and their structural relaxation’’ [Appl. Phys. Lett. 68, 3096 (1996)]

B. M. Clemens and T. C. Hufnagel

Appl. Phys. Lett. 69, 2938 (1996); http://dx.doi.org/10.1063/1.117330 (2 pages) | Cited 8 times

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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.43.Dq Amorphous semiconductors, metals, and alloys
64.70.K- Solid-solid transitions
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