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1 Jul 1996

Volume 69, Issue 1, pp. 1-138

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On the voltage stability of lateral barriers in in‐plane‐gated structures

P. Baumgartner, C. Engel, and G. Abstreiter

Appl. Phys. Lett. 69, 76 (1996); http://dx.doi.org/10.1063/1.118124 (3 pages) | Cited 5 times

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Lateral barriers in a two‐dimensional electron gas were fabricated by laser‐induced doping of GaAs/AlGaAs quantum well structures. The barrier heights of these insulating lines were analyzed as a function of voltage by temperature‐dependent current measurements. The barrier height saturates for large bias voltages. This is connected with surprisingly high breakdown voltages of the sub‐μm lateral barriers. We propose a model for in‐plane‐gated structures which can explain these effects by taking into account surface leakage currents and surface charges. The lateral band diagram and the barrier height as a function of voltage were calculated self‐consistently using this model. The model and the calculations are in good agreement with experimentally determined barrier heights, depletion lengths, and time‐dependent leakage currents. © 1996 American Institute of Physics.
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85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Strong instantaneous contribution in femtosecond degenerate four‐wave mixing from 350 μm InP due to virtual excitation

Sungkyu Yu, Jang Hee Chu, Joo In Lee, Dongho Kim, Y. H. Yee, D. S. Kim, Jae‐Young Leem, Cheul‐Ro Lee, and Jong Hyun Lee

Appl. Phys. Lett. 69, 79 (1996); http://dx.doi.org/10.1063/1.118125 (3 pages) | Cited 6 times

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We have observed strong four‐wave mixing (FWM) signals from the third up to the seventh order for a 350 μm undoped InP at 10 K with an excitation at far below the band gap. The third order spectrally resolved FWM signal shifts continuously to blue as time delay moves away from positive to negative. The peak intensities of the third and fifth order time‐integrated FWM signals decrease rapidly as the detuning increases, as (detuning)−2 and (detuning)−6, respectively. The FWM signal at far below the band gap is attributable to the strong instantaneous contribution of the excitation pulse. © 1996 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Defect reduction in ZnSe grown by molecular beam epitaxy on GaAs substrates cleaned using atomic hydrogen

Zhonghai Yu, S. L. Buczkowski, N. C. Giles, and T. H. Myers

Appl. Phys. Lett. 69, 82 (1996); http://dx.doi.org/10.1063/1.118127 (3 pages) | Cited 29 times

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Atomic hydrogen is demonstrated to effectively clean GaAs substrates for subsequent growth of ZnSe by molecular beam epitaxy. Optical fluorescence microscopy is shown to be a useful technique to image nonradiative defects related to stacking faults. While the density of stacking faults in ZnSe films grown using conventional thermal cleaning is greater than 107 cm−2, stacking fault densities lower than 104 cm−2 are obtained using atomic hydrogen cleaning. Low‐temperature photoluminescence spectra of undoped ZnSe are dominated by excitonic transitions for the low defect density samples in contrast to the high level of defect‐related emission from high defect density samples. © 1996 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Et II-VI semiconductors

A composite quantum well field‐effect transistor

M. J. Yang, Fu‐Cheng Wang, C. H. Yang, B. R. Bennett, and T. Q. Do

Appl. Phys. Lett. 69, 85 (1996); http://dx.doi.org/10.1063/1.118128 (3 pages) | Cited 7 times

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We have investigated the transport properties of a field‐effect transistor (FET) with a composite quantum well, which consists of two adjacent semiconductor quantum wells, GaSb and InAs, sandwiched by AlSb barriers. This FET shows a novel V‐shaped transfer characteristic, which is a direct result of the switching between electron and hole channels.
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85.30.Tv Field effect devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Biexciton luminescence from cubic ZnS epitaxial layers

Yoichi Yamada, Takaho Yamamoto, Seiji Nakamura, Tsunemasa Taguchi, Fumio Sasaki, Shunsuke Kobayashi, and Toshiro Tani

Appl. Phys. Lett. 69, 88 (1996); http://dx.doi.org/10.1063/1.118129 (3 pages) | Cited 22 times

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Excitonic luminescence from high‐quality ZnS epitaxial layers has been studied under high‐density excitation. The first experimental evidence for biexciton formation in ZnS was obtained. The binding energy of the biexciton was estimated to be 9 meV, which was the largest value among II–VI compound semiconductors with zinc blende modification. © 1996 American Institute of Physics.
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78.55.Et II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics
78.66.Hf II-VI semiconductors

Photoluminescence study of Si1−yCy/Si quantum well structures grown by molecular beam epitaxy

K. Brunner, K. Eberl, W. Winter, and N. Y. Jin‐Phillipp

Appl. Phys. Lett. 69, 91 (1996); http://dx.doi.org/10.1063/1.118130 (3 pages) | Cited 10 times

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Low‐temperature photoluminescence (PL) spectroscopy is applied to investigate pseudomorphic Si1−yCy/Si quantum well structures grown by solid‐source molecular beam epitaxy on Si substrates. The influence of substrate temperature during growth, growth rate, C content, and layer width on PL spectra is studied. Distinct band‐edge related no‐phonon and Si‐like TO phonon replica PL lines are observed from samples grown at substrate temperatures of about Ts=500–600 °C. The band gap in strained Si1−yCy alloy layers on Si decreases strongly with increasing C content. Even a single Si0.988C0.012 layer of 60 Å thickness shows clear PL of confined excitons. Si1−yCy layers of 11 Å width reveal band‐edge PL for a C content up to about y=6.4%. A high layer quality is observed in transmission electron microscopy. The intrinsic and extrinsic Si1−yCy alloy properties, quantum confinement, and layer quality are discussed on the basis of the PL results. © 1996 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Ap Elemental semiconductors

Gain analysis for surface emission by optical pumping of wurtzite GaN

K. Domen, K. Kondo, A. Kuramata, and T. Tanahashi

Appl. Phys. Lett. 69, 94 (1996); http://dx.doi.org/10.1063/1.118131 (3 pages) | Cited 14 times

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We analyzed optically pumped surface emissions by calculating the optical gain in bulk GaN. We found that GaN has a large gain of over 104 cm−1 and no gain saturation up to 25 000 cm−1 . This high optical gain is generated by the high joint‐density of states due to the three valence bands close to band edge and the large effective mass of the conduction band. As a result, although the gain required for lasing in the vertical direction is very high, the high excitation of carriers can achieve this without an intentional high reflection structure. © 1996 American Institute of Physics.
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78.45.+h Stimulated emission
42.70.Hj Laser materials

E0 band‐gap energy and lattice constant of ternary Zn1−xMgxSe as functions of composition

B. Jobst, D. Hommel, U. Lunz, T. Gerhard, and G. Landwehr

Appl. Phys. Lett. 69, 97 (1996); http://dx.doi.org/10.1063/1.118132 (3 pages) | Cited 61 times

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The E0 band gap energies and the lattice constants of zinc‐blende Zn1−xMgxSe alloys grown by molecular beam epitaxy in the composition range of 0≤x≤0.95 are determined. A nonlinear dependence on the composition is observed for both the band‐gap energies and the lattice con‐ stants of the ternary alloys. To our knowledge this is an initial report of a bowing in the lattice constant of a ternary II–VI alloy. Considering the bowings, the band‐gap energy and the lattice constant of zinc‐blende MgSe are extrapolated to be about 4.0 eV and 5.91 Å, respectively. © 1996 American Institute of Physics.
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61.66.Dk Alloys
78.66.Bz Metals and metallic alloys

Reduction of threading dislocation density in InP‐on‐Si heteroepitaxy with strained short‐period superlattices

K. Samonji, H. Yonezu, Y. Takagi, K. Iwaki, N. Ohshima, J. K. Shin, and K. Pak

Appl. Phys. Lett. 69, 100 (1996); http://dx.doi.org/10.1063/1.118087 (3 pages) | Cited 16 times

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We applied multistrained short‐period superlattices (SSPSs) and GaP buffer layers to the InP‐on‐Si heteroepitaxy, in order to suppress the generation of threading dislocations. As a result, it was found that the density of threading dislocations in an InP/SSPSs/GaAs/SSPSs/GaP/Si structure including (InAs)m(GaAs)n SSPSs and (GaAs)i(GaP)j SSPSs was remarkably reduced, compared with that in the InP/GaP/Si structure. Misfit dislocations lying along the 〈011〉 directions were observed at heterointerfaces in the InP/SSPSs/GaAs/SSPSs/GaP/Si structure. Therefore, the lattice mismatch strain was stepwise accommodated by the generation of misfit dislocations at the heterointerfaces. From these results, it was clarified that multi‐SSPSs are effective for reducing the density of threading dislocations in heteroepitaxy with a large lattice mismatch. © 1996 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.Lk Linear defects: dislocations, disclinations

Hot‐electron induced passivation of silicon dangling bonds at the Si(111)/SiO2 interface

E. Cartier and J. H. Stathis

Appl. Phys. Lett. 69, 103 (1996); http://dx.doi.org/10.1063/1.118088 (3 pages) | Cited 18 times

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It is demonstrated that pre‐existing silicon dangling bonds in Al‐gate metal‐oxide‐semiconductor capacitors on (111) silicon substrates are passivated during hot‐electron stress, while defects—of an as yet unidentified nature—are simultaneously generated. This degradation behavior mimics the interface degradation caused by atomic hydrogen from a remote plasma, suggesting that hydrogen release by hot electrons leads to interface degradation, but the silicon dangling bond is not the dominant interface defect. © 1996 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.Rv Passivation

Velocity overshoot greater than 107 cm/s at room temperature in sub‐0.1‐μm silicon‐on‐insulator devices

Tomohisa Mizuno, Ryuji Ohba, and Kazuya Ohuchi

Appl. Phys. Lett. 69, 106 (1996); http://dx.doi.org/10.1063/1.118089 (3 pages) | Cited 6 times

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In order to investigate the physical limits of the metal‐oxide semiconductor field‐effect transistor (MOSFET), we have experimentally studied the non‐stationary carrier transport in a high lateral electric field using the n‐ and p‐channel silicon‐on‐insulator (SOI) transistors. We have experimentally demonstrated that the electron drift velocity ve shows velocity overshoot, that is, over 107 cm/s (1.2×107 cm/s) at room temperature, at less than 0.1‐μm channel length Leff, which has been realized under suppressed self‐heating conditions. The carrier velocity was obtained by measuring both the transconductance and the gate‐to‐source capacitance. Moreover, according to the experimental Leff dependence of the carrier velocity, the physical limit of both electron and hole velocity at Leff=0 is estimated to be about 2.5×107 cm/s, which indicates that the transconductance is equal to about 2000 mS/mm. © 1996 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

Molybdenum contamination in low‐temperature epitaxial silicon films grown by remote plasma chemical vapor deposition

R. Sharma, J. Fretwell, B. Doris, and S. Banerjee

Appl. Phys. Lett. 69, 109 (1996); http://dx.doi.org/10.1063/1.118090 (3 pages) | Cited 2 times

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Molybdenum is a material commonly used in ultrahigh vacuum silicon processing systems. This letter shows that even at temperatures as low as 500 °C, the presence of Mo in contact with silicon during processing can, under certain circumstances, lead to Mo contamination of the silicon. MOS capacitors were fabricated on epitaxial silicon films grown at ∼500 °C by remote plasma chemical vapor deposition. The wafers were mounted on metal pucks made of either molybdenum or steel during the epitaxial growth process. Capacitor results of the Mo puck‐mounted wafers showed low minority carrier lifetimes and trapping ledges in the I–V plots, problems which were absent when steel pucks were used. Structural defects and plasma‐induced sputtering were ruled out and secondary ion mass spectroscopy (SIMS) analysis verified the presence of Mo in the wafers, confirming that Mo contamination from the puck during epitaxial growth was responsible for the poor electrical results. © 1996 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Fabrication of in‐plane aligned a‐axis oriented YBa2Cu3O7−x trilayer Josephson junctions

I. Takeuchi, P. A. Warburton, Z. Trajanovic, C. J. Lobb, Z. W. Dong, T. Venkatesan, M. A. Bari, W. E. Booij, E. J. Tarte, and M. G. Blamire

Appl. Phys. Lett. 69, 112 (1996); http://dx.doi.org/10.1063/1.118092 (3 pages) | Cited 7 times

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We have fabricated vertical YBa 2Cu3O7−x/PrBa 2Cu3O7−x/YBa 2Cu3O7−x (YBCO/PBCO/YBCO) Josephson junctions using in‐plane aligned a‐axis oriented YBCO multilayers on (100) LaSrGaO4(LSGO). The Tc’s of the device electrodes are typically greater than 80 K. Josephson coupling is observed for barrier thickness up to 800 Å. Strong nonlinear I–V characteristics arising from the properties of PBCO are observed for thicker barrier devices. Chip to chip spread in the device characteristics may be intrinsically due to the PBCO barrier. © 1996 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
74.72.-h Cuprate superconductors

Low‐temperature processing of superconducting Tl2Ba2Ca1Cu2Ox films on CeO2 buffered sapphire

J. D. O’Connor, D. Dew‐Hughes, A. P. Bramley, C. R. M. Grovenor, M. J. Goringe, and S. M. Morley

Appl. Phys. Lett. 69, 115 (1996); http://dx.doi.org/10.1063/1.118093 (3 pages) | Cited 11 times

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Tl2Ba2Ca1Cu2Ox thin films with excellent alignment have been grown on CeO2 buffered R‐plane sapphire using an ex situ anneal step in argon atmospheres at temperatures of 720–740 °C. With this low‐temperature process we have overcome the serious problem of reaction layers being formed at the CeO2/Tl2Ba2Ca1Cu2Ox interface, which can degrade film properties. The presence of a sharp CeO2/Tl2Ba2Ca1Cu2Ox interface has been confirmed by x‐ray diffraction, transmission electron microscopy, and high resolution electron microscopy observations. Films have well connected morphologies, with critical temperature (Tc) values of up to 101.6 K and critical current density (Jc) values of up to 1.25×105 A cm−2. © 1996 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
68.35.Ct Interface structure and roughness

In situ growth and superconducting properties of YNi2B2C thin films

A. Andreone, M. Iavarone, R. Vaglio, P. Manini, and E. Cogliati

Appl. Phys. Lett. 69, 118 (1996); http://dx.doi.org/10.1063/1.118094 (3 pages) | Cited 14 times

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Thin films of the recently discovered intermetallic superconducting compound YNi2B2C have been grown in situ using a magnetron sputtering technique. High quality, c‐axis oriented, films were obtained on MgO substrates held at about 800 °C during the sputtering process. The best films showed maximum Tc=15.25 K (onset), a transition width of ≊0.3 K, a room‐temperature resistivity of 53±3 μΩ cm, a residual resistivity ratio up to ≊5.4, a low‐temperature critical current Jc≊105 A/cm2 and Bc2≥6 T. Superconducting films were also obtained on sapphire and LaAlO3 substrates. © 1996 American Institute of Physics.
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74.70.Dd Ternary, quaternary, and multinary compounds (including Chevrel phases, borocarbides, etc.)
81.15.Cd Deposition by sputtering

Sol–gel epitaxial growth of La1−xCaxMnO3 with colossal magnetoresistance effect

Seung‐Young Bae and Shan Xiang Wang

Appl. Phys. Lett. 69, 121 (1996); http://dx.doi.org/10.1063/1.118095 (3 pages) | Cited 34 times

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The successful sol–gel growth of colossal magnetoresistive La‐Ca‐Mn‐O powder and epitaxial thin film is reported. Homogeneous powders were prepared at a temperature of 315 °C and epitaxial thin films were obtained on MgO(100) and LaAlO3(100) through heat treatment at 700–950 °C. A transition from semiconductor (negative dρ/dT) to metal (positive dρ/dT) was observed at 225 K, which was located in proximity to the magnetic transition temperature (Tc) of 228 K. A peak magnetoresistance ratio of ∼900% occurred at 220 K. © 1996 American Institute of Physics.
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75.47.De Giant magnetoresistance
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining

High linear density written transitions in exchange isolated Pt/CoCrTa multilayer thin films

Wen H. Liu, Kris Schouterden, Lin Mei, Kuoksan Ho, Bruce M. Lairson, and Alexander P. Payne

Appl. Phys. Lett. 69, 124 (1996); http://dx.doi.org/10.1063/1.118096 (3 pages) | Cited 8 times

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Multilayer Pt/CoCrTa thin‐film structures have been prepared which display little intergranular exchange coupling and nearly 100% remanence in the perpendicular direction. Magnetic recordings of continuous square wave patterns have been made and characterized using an inductive contact recording transducer and by magnetic force microscopy. Written transitions appear to retain good fidelity at more than 300 000 transitions per inch. With exchange isolation of the grains, media noise becomes negligible relative to thermal noise from the recording system electronics. Analysis of magnetic force microscopy images yields a signal to integrated noise ratio of 17 dB at 309 000 transitions per inch written in a 4 μm wide track, which is comparable to a measured signal to total noise ratio of 8 dB at 350 000 reversals per inch measured using an inductive transducer at 100 in./s. These results are contrasted with observations on exchange coupled Pt/Co multilayers. © 1996 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Ss Magnetic recording materials

Oscillations of interlayer coupling and magneto‐optics in sputtered Co–Al/Cu multilayers

Shi‐Ming Zhou, Liang‐Yao Chen, Wei‐Ming Zheng, Wei‐Rong Zhu, Yu Wang, Ya‐Dong Wang, Yu‐Xiang Zheng, Qing‐Yuan Jin, and You‐Hua Qian

Appl. Phys. Lett. 69, 127 (1996); http://dx.doi.org/10.1063/1.118097 (3 pages) | Cited 6 times

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We have prepared [Co90Al10/Cu]30 multilayers by ion beam sputtering and studied the behavior of interlayer coupling, magnetoresistance, and the magneto‐optical Kerr effect. For Co–Al/Cu multilayers, the in‐plane saturation field, coercive force HC and magnetoresistance ratio ΔR/R have been observed to oscillate with a period of about 0.9 nm, as a function of Cu spacer layer thickness. Furthermore, polar Kerr rotation θk in visible wavelength range also oscillates with the same period. The magneto‐optical activities may be attributed to changes in the optical constants with the magnetic state. © 1996 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
78.20.Ls Magneto-optical effects
75.30.Et Exchange and superexchange interactions

Scanned‐probe lateral‐force determination of fluid‐dynamic effects near a solid surface in air

M. A. Drummond Roby, G. C. Wetsel, and C.‐Y. Wang

Appl. Phys. Lett. 69, 130 (1996); http://dx.doi.org/10.1063/1.118098 (3 pages) | Cited 8 times

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A calibrated method for the experimental determination of dynamic lateral force using a scanned probe in air has been applied to the measurement of force vs distance as the probe tip approaches a solid surface. The probe is a fused silica fiber vibrated with its axis perpendicular to the surface in a configuration commonly used for distance regulation in near‐field scanned optical microscopes. Quantitative agreement of a fluid‐dynamic model with the approach data demonstrates that the effects of fluids between the probe and the surface dominate the force on the probe in the optical far field. A two‐layer fluid model indicates that fluid‐dynamic effects must also be considered in lateral‐force determination in the optical near field. © 1996 American Institute of Physics.
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07.79.-v Scanning probe microscopes and components
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
07.10.Pz Instruments for strain, force, and torque

Demonstration of a sub‐picosecond x‐ray streak camera

Z. Chang, A. Rundquist, J. Zhou, M. M. Murnane, H. C. Kapteyn, X. Liu, B. Shan, J. Liu, L. Niu, M. Gong, and X. Zhang

Appl. Phys. Lett. 69, 133 (1996); http://dx.doi.org/10.1063/1.118099 (3 pages) | Cited 30 times

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A novel design, magnetically focused, x‐ray streak camera was designed and tested using sub‐20 fs soft‐x‐ray pulses generated by high harmonic emission in a gas. The temporal resolution of the camera was demonstrated to be under 0.9 ps throughout the ultraviolet to soft‐x‐ray wavelength region. Our streak camera represents the fastest x‐ray detector developed to date. © 1996 American Institute of Physics.
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07.68.+m Photography, photographic instruments; xerography
07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
FREE

Comment on ‘‘Crystalline carbon nitride films formation by chemical vapor deposition’’ [Appl. Phys. Lett. 68, 634 (1996)]

P. H. Fang

Appl. Phys. Lett. 69, 136 (1996); http://dx.doi.org/10.1063/1.118100 (2 pages) | Cited 7 times

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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
81.05.Ea III-V semiconductors
FREE

Erratum: ‘‘High resolution characterization of structural inhomogeneities in YBa2Cu3O7−δ crystals with sharp superconducting transitions’’ [Appl. Phys. Lett. 68, 2729 (1996)]

S. B. Qadri, M. S. Osofsky, V. M. Browning, E. F. Skelton, and T. A. Vanderah

Appl. Phys. Lett. 69, 138 (1996); http://dx.doi.org/10.1063/1.118149 (1 page)

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Abstract Unavailable
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74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.72.-h Cuprate superconductors
99.10.Cd Errata
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