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Applied Physics Letters / Volume 69 / Issue 2

Appl. Phys. Lett. 69, 215 (1996); http://dx.doi.org/10.1063/1.117376 (3 pages)

The molecular beam epitaxial growth of InSb on (111)B GaAs

E. Michel, J. D. Kim, S. Javadpour, J. Xu, I. Ferguson, and M. Razeghi

Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60201

(Received 17 January 1996; accepted 13 May 1996)

The molecular beam epitaxial growth of InSb on (111)B GaAs has been investigated. It was found that for a given Sb/In ratio, a higher growth temperature was required for the growth of InSb on (111)B GaAs compared to that on (001) GaAs. This difference has been attributed to the bonding characteristics of the (111)B and (001) surface. Once growth had been optimized, it was found that the material characteristics of (111)B InSb were almost identical to that of (001) InSb, i.e., independent of orientation. For example, the x‐ray full width at half‐maximum and 300 K mobility had the same absolute values for (111) InSb and (001)InSb and followed the same dependence with the sample thickness. Te was found to be a well‐behaved n‐type dopant for (111)B InSb. © 1996 American Institute of Physics.

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KEYWORDS and PACS

Keywords

INDIUM ANTIMONIDES, MOLECULAR BEAM EPITAXY, TEMPERATURE DEPENDENCE, DANGLING BONDS, XRD, DOPED MATERIALS, TELLURIUM ADDITIONS, FILM GROWTH

PACS

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 81.05.Ea

    III-V semiconductors

  • 61.05.jh

    Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.117376

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    A. Noreika, N. Francombe, and C. Wood, J. Appl. Phys. 52, 7416 (1981)JAPIAU000052000012007416000001.

    K. Jamison, A. Bensaoula, A. Ignatiev, C. Huang, and W. Chan, Appl. Phys. Lett. 54, 1916 (1989)APPLAB000054000019001916000001.

    E. Michel, G. Singh, S. Slivken, C. Besikci, P. Bove, I. Ferguson, and M. Razeghi, Appl. Phys. Lett. 65, 3338 (1994)APPLAB000065000026003338000001.

    A. Chin, P. Martin, P. Ho, J. Ballingall, T. Yu, and J. Mazurowski, Appl. Phys. Lett. 65, 3338 (1994)APPLAB000065000026003338000001.


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