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25 Nov 1996

Volume 69, Issue 22, pp. 3297-3437

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Pulsed laser recording of gratings in SiO‐Cu quantum dot thin films

Yu. Kaganovskii and M. Rosenbluh

Appl. Phys. Lett. 69, 3297 (1996); http://dx.doi.org/10.1063/1.117285 (3 pages) | Cited 2 times

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Interference patterns are written by two intersecting pulsed laser beams in thin films composed of Cu quantum dots in SiO glass. The rapid local optical heating of the metal clusters forming the quantum dots in the glass film results in the writing of patterns in the thin film. The high cluster temperatures attained drive the selective growth of the larger quantum dots and also result in a stress induced peeling of the film from the substrate. Estimates of the kinetics of the selective quantum dot growth agrees well with experimental observations. © 1996 American Institute of Physics.
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42.79.Dj Gratings
78.66.Sq Composite materials

Luminescence efficiency of cerium doped insulators: The role of electron transfer processes

M. Raukas, S. A. Basun, W. van Schaik, W. M. Yen, and U. Happek

Appl. Phys. Lett. 69, 3300 (1996); http://dx.doi.org/10.1063/1.117286 (3 pages) | Cited 63 times

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Insulating host materials doped with trivalent cerium show quantum efficiencies of the Ce3+ emission ranging from zero to unity. Comparing optical and photoelectrical properties of a very efficient scintillator material (Lu2(SiO4)O:Ce) to those of cerium doped oxides with quenched emission, the radical differences for these materials are demonstrated to originate from the location of the cerium energy levels with respect to the host conduction band. Photoionization and subsequent nonradiative relaxation processes responsible for the luminescence quenching are discussed in a donor–acceptor model for the impurity ion and a rule for luminescence efficiency is derived, applicable to a variety of phosphor and scintillator materials. © 1996 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
29.40.Mc Scintillation detectors
72.40.+w Photoconduction and photovoltaic effects

Optical gain of strained hexagonal and cubic GaN quantum‐well lasers

Doyeol Ahn and Seoung‐Hwan Park

Appl. Phys. Lett. 69, 3303 (1996); http://dx.doi.org/10.1063/1.117287 (3 pages) | Cited 8 times

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In order to estimate and compare the would‐be performances of both hexagonal and cubic GaN quantum‐well lasers, the optical gains of strained‐layer hexagonal and cubic GaN quantum wells are studied theoretically taking into account non‐Markovian relaxation. The 6×6 multiband effective‐mass Hamiltonians are used to calculate the band structures of both hexagonal—and cubic—quantum wells. As a numerical example, the optical gains of strained cubic and hexagonal quantum wells with various well widths are calculated. It is expected that the optical gains of the cubic‐phase quantum well are larger in magnitudes than those of the hexagonal GaN quantum well over the wide range of carrier densities due to the heavier effective mass of the HH1 band of the latter at the zone center. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
78.45.+h Stimulated emission

Near field optics: Snapshot of the field emitted by a nanosource using a photosensitive polymer

Stéphane Davy and Michel Spajer

Appl. Phys. Lett. 69, 3306 (1996); http://dx.doi.org/10.1063/1.117288 (3 pages) | Cited 33 times

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We propose here a method for probe characterization based on lithography on a photosensitive polymer without film development. We record in near field conditions the light emitted by different kinds of probes in order to distinguish in situ the near field contribution from the far field contribution of the tip. This information, which cannot be deduced from far field diffraction, allows an estimation of the field confinement and of the expected resolution of the microscope. © 1996 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
42.70.Jk Polymers and organics

Preparation and properties of an organic light emitting diode with two emission colors dependent on the voltage polarity

Tatsuo Mori, Kouji Obata, Kaname Imaizumi, and Teruyoshi Mizutani

Appl. Phys. Lett. 69, 3309 (1996); http://dx.doi.org/10.1063/1.117289 (3 pages) | Cited 16 times

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We developed an organic light emitting diode (LED) that emits orange light at the forward bias (ITO anode and Al cathode) and green light at the reverse bias (ITO cathode and Al anode). The organic LED has a triple layer structure where an emission layer with different doped guest dye on each side is interposed between two hole transport layers. Its brightness, maximum 20 cd/m2 was not strong because electrons are blocked by the hole transport layer near the cathode. However, the EL efficiency (lm/W) for the reverse bias was 13 times higher than that for the forward bias. © 1996 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds

Nonoptical tip–sample distance control for scanning near‐field optical microscopy

Yung‐Hui Chuang, Chia‐Jen Wang, J. Y. Huang, and Ci‐Ling Pan

Appl. Phys. Lett. 69, 3312 (1996); http://dx.doi.org/10.1063/1.117290 (3 pages) | Cited 13 times

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We propose and demonstrate a novel nonoptical technique for regulation of tip–sample distance in a scanning near‐field optical microscope (SNOM). The fiber tip for the SNOM is attached to one prong of a quartz tuning fork. The fork is dithered with a gated sinusoidal signal. The vibration of the freely oscillating fiber tip, which manifests as the induced piezoelectric voltage on the fork electrodes, is monitored during the half‐period of the gated sinusoid for which the fork is not driven. The time‐multiplexing scheme, thus, allows the tuning fork to serve as a dither and a sensor with high Q factor, simultaneously. The gating technique could also potentially allow the SNOM to be used for the investigation of surface relaxation dynamics with high spatial resolution and submillisecond time resolution. © 1996 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
68.35.B- Structure of clean surfaces (and surface reconstruction)

Optical transitions in InxGa1−xN alloys grown by metalorganic chemical vapor deposition

W. Shan, B. D. Little, J. J. Song, Z. C. Feng, M. Schurman, and R. A. Stall

Appl. Phys. Lett. 69, 3315 (1996); http://dx.doi.org/10.1063/1.117291 (3 pages) | Cited 61 times

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We present the results of optical studies of InxGa1−xN alloys (0<x<0.2) grown by metalorganic chemical vapor deposition on top of thick GaN epitaxial layers with sapphire as substrates. Photoluminescence (PL) and photoreflectance measurements were performed at various temperatures to determine the band gap and its variation as a function of temperature for samples with different indium concentrations. Carrier recombination dynamics in the alloy samples were studied using time‐resolved luminescence spectroscopy. While the measured decay time for the alloy near‐band‐edge PL emissions was observed to be generally around a few hundred picoseconds at 10 K, it was found that the decay time decreased rapidly as the sample temperatures increased. This indicates a strong influence of temperature on the processes of trapping and recombination of excited carriers at impurities and defects in the InGaN alloys. © 1996 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Optically inscribed surface relief diffraction gratings on azobenzene‐containing polymers for coupling light into slab waveguides

J. Paterson, A. Natansohn, P. Rochon, C. L. Callender, and L. Robitaille

Appl. Phys. Lett. 69, 3318 (1996); http://dx.doi.org/10.1063/1.117292 (3 pages) | Cited 33 times

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Surface relief diffraction gratings inscribed on azobenzene‐containing polymers are designed to act as light couplers into slab waveguides. The gratings are inscribed both directly in poly{4‐[2‐(methacryloyloxy)ethyl]azobenzene} (pMEA) waveguide material, and in an azopolymer cladding layer applied to polyimide, silicon nitride, and silicon oxynitride films. Input and output coupling of both 633 and 830 nm light is observed in the waveguides. © 1996 American Institute of Physics.
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42.79.Dj Gratings
42.70.Jk Polymers and organics
42.82.Et Waveguides, couplers, and arrays

Surface‐emitted blue light from [112]‐oriented (In,Ga)As/GaAs quantum well edge‐emitting lasers

P. A. Ramos and E. Towe

Appl. Phys. Lett. 69, 3321 (1996); http://dx.doi.org/10.1063/1.117293 (3 pages) | Cited 7 times

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Second‐harmonic generation of surface‐emitted blue light has been achieved in (In,Ga)As/GaAs quantum well edge‐emitting lasers. The blue light is generated by the nonlinear interaction of the internal fundamental fields of a continuously pumped laser. These lasers exhibit room temperature threshold current densities as low as 200 A/cm2 and produce about 2.6 nW of blue light for 9.8 mW of fundamental power. The peak emission of the blue light is at 487 nm and the spectral spread is about 1.7 nm. © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors

Surface micromachined interferometer‐based optical reading technique

G. L. Christenson, A. T. T. D. Tran, S. A. Miller, D. Haronian, Y. H. Lo, and N. C. MacDonald

Appl. Phys. Lett. 69, 3324 (1996); http://dx.doi.org/10.1063/1.117294 (3 pages) | Cited 2 times

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A surface micromachined suspended interferometer and an atomic force microscope (AFM) are incorporated into a novel optical reading technique. The AFM tip mechanically deflects the suspended membrane as it scans past a data bit on the membrane surface. The data are read by monitoring the changing interference pattern generated in the optical aperture of the interferometer. When operated in parallel, there exists the potential for high speed, high density data reading. © 1996 American Institute of Physics.
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07.60.Ly Interferometers
07.79.Lh Atomic force microscopes
42.79.Ls Scanners, image intensifiers, and image converters

Electromagnetic excitation of ultrasound in electrolytes

N. S. Tankovsky

Appl. Phys. Lett. 69, 3327 (1996); http://dx.doi.org/10.1063/1.117295 (3 pages) | Cited 1 time

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An electromagnetic explanation is given in earlier experimental evidence for the possibility of exciting acoustic signals by a transient electric field in an electrolyte. The theory is in agreement with experimental observations of acoustic signals excited by some elementary electric signals. The described mechanism can be applied to the construction of ultrasonic transducers operating in liquids or in living tissues. © 1996 American Institute of Physics.
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43.35.Bf Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in liquids, liquid crystals, suspensions, and emulsions
43.38.-p Transduction; acoustical devices for the generation and reproduction of sound
47.65.-d Magnetohydrodynamics and electrohydrodynamics
82.45.-h Electrochemistry and electrophoresis

Effect of a multiple‐cusp magnetic field on electron confinement in a pulse‐time‐modulated plasma

Seiji Samukawa and Tsutomu Tsukada

Appl. Phys. Lett. 69, 3330 (1996); http://dx.doi.org/10.1063/1.117296 (3 pages) | Cited 1 time

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Since ulrahigh frequency (UHF) plasma has a low electron temperature (less than 2 eV) and uniform density, the effects of electron confinement due to the sheath potential barrier or the plasma potential distributions are less prominent than with electron cyclotron resonance plasma or inductive coupled plasma. Consequently, with no magnetic fields, the pulsed UHF plasma discharge cannot be maintained. To confine electrons at the afterglow in the pulsed UHF plasma, multiple‐cusp magnetic fields are required on the chamber wall. Under this condition, the pulsed UHF plasma can be maintained even at a pulse interval of 40 μs and can significantly improve the etching rate and etching selectivity. That is, electron confinement with magnetic fields plays a very important role for the generation of negative ions at the afterglow in a pulse‐time‐modulated plasma. © 1996 American Institute of Physics.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
52.40.Hf Plasma-material interactions; boundary layer effects
52.80.Pi High-frequency and RF discharges

Chemical information in positron annihilation spectra

U. Myler, R. D. Goldberg, A. P. Knights, D. W. Lawther, and P. J. Simpson

Appl. Phys. Lett. 69, 3333 (1996); http://dx.doi.org/10.1063/1.117297 (3 pages) | Cited 24 times

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Positron annihilation spectra of arsenic‐ and gold‐implanted silicon are compared with spectra from bulk samples of arsenic and gold. Spectra with strongly reduced background intensities were recorded using a two detector coincidence system with a variable‐energy positron beam. It is shown that features in the high‐momentum region of the spectra (∼514–520 keV) can be identified with particular elements and that this identification is independent of structure, i.e., whether the element forms the bulk or is an implanted impurity. Proportionality between the intensity of characteristic spectral features and the fraction of annihilating positrons is also demonstrated, using the native oxide on a silicon wafer as a test case. © 1996 American Institute of Physics.
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78.70.Bj Positron annihilation
61.72.J- Point defects and defect clusters
61.72.uf Ge and Si

Observation of step configuration conversion on single‐domain Si(001) 1×2 surface by scanning tunneling microscope

J. M. Zhou, N. Lin, L. W. Guo, M. H. Zhang, Q. Huang, N. Cue, and T. Chen

Appl. Phys. Lett. 69, 3336 (1996); http://dx.doi.org/10.1063/1.117298 (3 pages) | Cited 1 time

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We have observed a conversion of step configuration of 3.5° miscut Si(001) surface after depositing several monolayers of Ge by using a scanning tunneling microscope. For a 3.5° miscut Si(001) surface, terraces are spaced by double‐atom height steps and all dimer rows, either on the upper terrace or on the lower terrace of a step, are normal to the step edge, defined as single‐domain (1×2) surface. After depositing 2 ML of Ge, the surface is still single domain, but dimer rows have changed their direction, running parallel to the step edge and single domain (2×1) appeared. The reason for such conversion is attributed to the strain that existed on the epilayer of Ge. © 1996 American Institute of Physics.
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68.35.Md Surface thermodynamics, surface energies
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.55.-a Thin film structure and morphology

Comparison of pulsed laser deposition and thermal deposition: Improved layer‐by‐layer growth of Fe/Cu(111)

H. Jenniches, M. Klaua, H. Höche, and J. Kirschner

Appl. Phys. Lett. 69, 3339 (1996); http://dx.doi.org/10.1063/1.117299 (3 pages) | Cited 4 times

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In the search for a correlation between the magnetism and the microstructure of ultrathin films, straightforward layer‐by‐layer growth is desirable. The thermal deposition of Fe onto Cu(111), however, does not result in this growth mode. In this letter, we compare the initial growth of Fe on Cu(111) prepared by pulsed laser deposition (PLD) with thermally deposited Fe/Cu(111) using scanning tunneling microscopy (STM). In PLD, from the beginning there is two‐dimensional nucleation and growth, in contrast to the initial bilayer nucleation and growth found for thermal deposition. Therefore, it is shown by STM that PLD grown films exhibit greatly improved layer‐by‐layer growth. The different experimental results are interpreted in terms of the very high deposition rate during PLD. © 1996 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
75.50.Bb Fe and its alloys

An approach to threading dislocation ‘‘reaction kinetics’’

A. E. Romanov, W. Pompe, G. E. Beltz, and J. S. Speck

Appl. Phys. Lett. 69, 3342 (1996); http://dx.doi.org/10.1063/1.117300 (3 pages) | Cited 21 times

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An approach is developed to describe the evolution of threading dislocation (TD) densities in lattice‐mismatched epitaxial films. TD ensembles are treated in close correspondence to chemical species in chemical reaction kinetics. ‘‘Reaction rate’’ equations are derived for changing TD density with increasing film thickness for first‐ and second‐order reactions. Selective area growth is an example of a first‐order reaction. TD annihilation, fusion, and scattering are examples of second‐order reactions. Analytic models are derived for TD behavior in relaxed homogeneous buffer layers, selective area growth, and strained layers. © 1996 American Institute of Physics.
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68.55.-a Thin film structure and morphology
61.72.Bb Theories and models of crystal defects
61.72.Lk Linear defects: dislocations, disclinations

Diffusion of hydrogen in K1−xLiyTa1−yNbxO3 doped crystals

Xiaolin Tong, Min Zhang, Amnon Yariv, and Aharon Agranat

Appl. Phys. Lett. 69, 3345 (1996); http://dx.doi.org/10.1063/1.117301 (3 pages) | Cited 3 times

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Based on infrared spectra and protonic conductivity measurements, we propose a model of hydrogen ion migration in K1−yLiyTa1−xNbxO3 doped crystals and use it to obtain a theoretical estimate of the diffusion constant pre‐exponential factor D0 that is in reasonable agreement with the experimental result. This model shows that the transition energy of the second, and higher, overtone(s) of the [OH] vibration can be higher than the activation energy of hydrogen ion migration. © 1996 American Institute of Physics.
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66.30.Dn Theory of diffusion and ionic conduction in solids
78.30.Hv Other nonmetallic inorganics

Vibrational states of tetrahedral amorphous carbon

G. P. Lopinski, V. I. Merkulov, and J. S. Lannin

Appl. Phys. Lett. 69, 3348 (1996); http://dx.doi.org/10.1063/1.117302 (3 pages) | Cited 19 times

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High resolution electron energy loss spectroscopy was used to observe variations in the vibrational states of amorphous carbon films with differences in preparation methods. Diamondlike films made by pulsed laser deposition (PLD) exhibit differences in the weighted phonon density of states relative to sputtered films. These differences are due to an increase of fourfold bonded atoms in the PLD films and are in qualitative agreement with theoretical calculations for amorphous carbon networks. © 1996 American Institute of Physics.
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63.50.-x Vibrational states in disordered systems
68.35.Ja Surface and interface dynamics and vibrations
61.43.Dq Amorphous semiconductors, metals, and alloys

Photoemission spectroscopy studies of the surface of GaN films grown by vapor phase epitaxy

Jian Ma, B. Garni, N. Perkins, W. L. O’Brien, T. F. Kuech, and M. G. Lagally

Appl. Phys. Lett. 69, 3351 (1996); http://dx.doi.org/10.1063/1.117303 (3 pages) | Cited 17 times

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Surfaces of GaN films have been investigated with photoemission spectroscopy. The measured valence band is in good agreement with band structure calculations and correlates well with tunneling luminescence measurements performed on the same samples. The effect of N depletion on band structure is explored, clarifying disagreements in previous photoemission measurements. © 1996 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
79.60.Dp Adsorbed layers and thin films
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Thermally activated carrier transfer and luminescence line shape in self‐organized InAs quantum dots

L. Brusaferri, S. Sanguinetti, E. Grilli, M. Guzzi, A. Bignazzi, F. Bogani, L. Carraresi, M. Colocci, A. Bosacchi, P. Frigeri, and S. Franchi

Appl. Phys. Lett. 69, 3354 (1996); http://dx.doi.org/10.1063/1.117304 (3 pages) | Cited 113 times

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We investigated the temperature dependence (10–180 K) of the photoluminescence (PL) emission spectrum of self‐organized InAs/GaAs quantum dots grown under different conditions. The temperature dependence of the PL intensity is determined by two thermally activated processes: (i) quenching due to the escape of carriers from the quantum dots and (ii) carrier transfer between dots via wetting layer states. The existence of different dot families is confirmed by the deconvolution of the spectra in gaussian components with full width half maxima of 20–30 meV. The transfer of excitation is responsible for the sigmoidal temperature dependence of the peak energies of undeconvoluted PL bands. © 1996 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Lateral wet oxidation of AlxGa1−xAs‐GaAs depending on its structures

J.‐H. Kim, D. H. Lim, K. S. Kim, G. M. Yang, K. Y. Lim, and H. J. Lee

Appl. Phys. Lett. 69, 3357 (1996); http://dx.doi.org/10.1063/1.117305 (3 pages) | Cited 31 times

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Data are presented demonstrating that the lateral wet oxidation of Al(Ga)As layer is strongly influenced by its thicknesses and heterointerface structures as well as Al compositions. The oxidation length decreases rapidly with decreasing AlAs thickness in the range of <80 nm and oxidation nearly stops at a thickness of ∼11 nm. Also, the oxidation rate of AlxGa1−xAs decreases quickly with decreasing Al composition, providing a high degree of oxidation selectivity. AlGaAs layers on both sides of AlAs layer reduce the lateral oxidation rate which is enhanced by the stress induced by oxidized AlAs. © 1996 American Institute of Physics.
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81.65.Mq Oxidation
81.05.Ea III-V semiconductors

Transport in gated undoped GaAs/AlxGa1−xAs heterostructures in the high density and high mobility range

J. Herfort and Y. Hirayama

Appl. Phys. Lett. 69, 3360 (1996); http://dx.doi.org/10.1063/1.117306 (3 pages) | Cited 9 times

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The two‐dimensional electron gas with electron densities higher than 1016 m−2 which is formed at the interface in undoped GaAs/AlxGa1−xAs heterostructure by the electric field generated by a top gate is studied. Despite the high electron density in the sample, rather high mobilities of about 100 m2/Vs can be achieved with sufficient small gate leakage currents. The population of the second subband is studied from Shubnikov‐de Haas measurements in these devices. © 1996 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.61.Ey III-V semiconductors

Electron‐electron scattering in a high purity mesoscopic conductor

David R. S. Cumming and John H. Davies

Appl. Phys. Lett. 69, 3363 (1996); http://dx.doi.org/10.1063/1.117307 (3 pages) | Cited 9 times

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We have carried out measurements on the nonlinear behavior of the current–voltage characteristics of a mesoscopic cross, fabricated in a high mobility GaAs/AlGaAs two‐dimensional electron gas. Our measurement show two distinct peaks, one at an electron excess energy of 3.3 meV, and a second at an excess energy of 50 meV. The first peak arises when electron‐electron scattering reduces the mean free path below the dimensions of the cross. The second peak is due to electron cooling by LO phonon emission. © 1996 American Institute of Physics.
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73.23.Ad Ballistic transport
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling

Influence of redistribution of electrons in the conduction band on the lattice parameters of AlxGa1−xAs

J. Bak‐Misiuk, M. Leszczyński, W. Paszkowicz, and J. Domagała

Appl. Phys. Lett. 69, 3366 (1996); http://dx.doi.org/10.1063/1.117308 (3 pages) | Cited 3 times

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Lattice parameters of GaAs layers were measured using the Bond method. For samples heavily doped with S and Se, we observed an increase of lattice parameters with respect to the undoped samples. The results are compared with those observed for AlxGa1−xAs:S (Wagner et al.) and both are explained by the influence of free electrons and their redistribution in the conduction band. For Al0.39Ga0.61As, the following values of deformation potentials of the conduction‐band minima were obtained: DΓ=−6.7 eV, DL=1.4 eV, and DX=1 eV. © 1996 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
65.40.De Thermal expansion; thermomechanical effects

Dissociative and selective adsorption of H2S on the GaAs(001)‐(4×2) surface

Chan‐Hwa Chung, Sang I. Yi, and W. Henry Weinberg

Appl. Phys. Lett. 69, 3369 (1996); http://dx.doi.org/10.1063/1.117262 (3 pages) | Cited 4 times

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The adsorption of H2S on the GaAs(001)‐(4×2) surface has been studied using high‐resolution electron energy loss spectroscopy and temperature‐programmed desorption. The H2S adsorption is predominantly dissociative at 100 K, producing mercaptan (HS‐) and H‐ species, the latter of which are bonded only to As. After annealing to 700 K, vacant gallium sites, which are available for further sulfur chemisorption, are monitored by post‐exposure of atomic hydrogen. Several cycles of H2S exposure and thermal annealing build up more S‐Ga bonding on the surface and yield a completely sulfur‐saturated layer on which only sulfur is available for post‐hydrogenation. © 1996 American Institute of Physics.
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68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
81.65.Rv Passivation
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