We measured the Schottky barrier heights and specific contact resistivities of four different metals on p‐type GaN. The Schottky barrier heights of Pt, Ni, Au, and Ti were obtained from the current‐voltage characteristics to be 0.50, 0.50, 0.57, and 0.65 eV, respectively. The specific contact resistivities were 0.013, 0.015, 0.026, and 0.035 Ω⋅cm2, respectively. Our experimental results proved that the Schottky barrier heights and specific contact resistivities decrease with increase in metal work function as expected theoretically. © 1996 American Institute of Physics.