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23 Dec 1996

Volume 69, Issue 26, pp. 3963-4113

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Photoluminescence from optical waveguiding LiNbO3 film formed on crystalline SiO2 substrate by pulsed laser deposition

X. L. Wu, X. L. Guo, Z. G. Liu, S. S. Jiang, D. Feng, and G. G. Siu

Appl. Phys. Lett. 69, 3963 (1996); http://dx.doi.org/10.1063/1.117981 (3 pages) | Cited 9 times

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Optical waveguiding LiNbO3 film was grown on (001)‐oriented crystalline SiO2 substrate by pulsed laser deposition. The film is highly (012) textured and has smooth surface. Its photoluminescence (PL) spectra were obtained by using the 514.4 nm line excitation of Ar+ laser, displaying a broad band peaked at 2.2 eV at room temperature and three well‐resolved luminescent bands peaked at 2.3, 2.2, and 2.14 eV at liquid nitrogen temperature with different polarization properties. Spectral analysis indicates that these obtained PL bands arise from the self‐trapped excitons and the E′ defect pairs connected with oxygen vacancies in the LiNbO3 film. © 1996 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
81.15.Fg Pulsed laser ablation deposition
42.82.Et Waveguides, couplers, and arrays

Thermal fixing of volume holograms in potassium niobate

Xiaolin Tong, Min Zhang, Amnon Yariv, and Aharon Agranat

Appl. Phys. Lett. 69, 3966 (1996); http://dx.doi.org/10.1063/1.117982 (3 pages) | Cited 5 times

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Volume holograms are thermally fixed in a pure and an iron doped potassium niobate crystal through the screening of a photorefractive space‐charge field by a nonphotoactive species at elevated temperature (110 °C). The nonphotoactive species is identified as the hydrogen ion. Fixed holograms are reconstructed at different temperatures. A diffraction efficiency of 16% in a 6 mm thick KNbO3:Fe sample is measured. The time constant and activation energy associated with the thermal induced decay of the hologram are determined to be 2.9×10−7 s and 0.81 eV for the KNbO3:Fe sample, and 1.35×10−7 s and 0.79 eV for the pure KNbO3 sample. © 1996 American Institute of Physics.
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42.40.Pa Volume holograms
42.70.Ln Holographic recording materials; optical storage media
78.20.Jq Electro-optical effects

Relaxation oscillation behavior in polarization additive pulse mode‐locked fiber ring lasers

S. Namiki, E. P. Ippen, H. A. Haus, and K. Tamura

Appl. Phys. Lett. 69, 3969 (1996); http://dx.doi.org/10.1063/1.117983 (3 pages) | Cited 9 times

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The noise characteristics of a polarization additive pulse mode‐locked erbium‐doped fiber soliton ring laser are examined. Relaxation oscillations are found only when the cw background copropagates with the soliton and not when the soliton operates alone. This observation proves that the mode‐locked pulse stream has a strong self‐stabilization that exempts the soliton from the relaxation oscillations, leading to extremely quiet operation. © 1996 American Institute of Physics.
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42.55.Wd Fiber lasers
42.60.Fc Modulation, tuning, and mode locking
42.65.Tg Optical solitons; nonlinear guided waves

Influence of disorder on luminescence from pseudorandomized strained Si1−xGex/Si superlattices

Y. Miyake, Y. Shiraki, and S. Fukatsu

Appl. Phys. Lett. 69, 3972 (1996); http://dx.doi.org/10.1063/1.117984 (3 pages) | Cited 1 time

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Carrier localization in a disordered potential was studied in type‐I strained Si1−xGex/Si superlattices (SLs) where layer widths have been artificially pseudorandomized. The photoluminescence (PL) intensity under a transverse bias voltage varies monotonically and exhibits a folded increase as the bias is increased as opposed to an ordered SL where only steady drop‐off of PL intensity, symmetric with respect to bias polarity, was observed with increasing field strength. The results indicate that electron and hole wave functions are located spatially apart at zero bias due to disorder‐induced localization. We point out that such a wave‐function displacement is even pronounced for type‐II SL potentials in the presence of monolayer thickness fluctuation. © 1996 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Interband impact ionization by terahertz illumination of InAs heterostructures

A. G. Markelz, N. G. Asmar, B. Brar, and E. G. Gwinn

Appl. Phys. Lett. 69, 3975 (1996); http://dx.doi.org/10.1063/1.117842 (3 pages) | Cited 26 times

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Experimental studies of InAs heterostructures illuminated by far‐infrared (FIR) radiation reveal an abrupt increase in the charge density for FIR intensities above a threshold value that rises with increasing frequency. We attribute this charge density rise to interband impact ionization in a regime in which ωτm∼1, where τm is the momentum relaxation time, and f=ω/2π is the FIR frequency. The dependence of the density rise on the FIR field strength supports this interpretation, and gives threshold fields of 3.7–8.9 kV/cm for the frequency range 0.3–0.66 THz. © 1996 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
73.50.Fq High-field and nonlinear effects

Linear measurement of weak 1.57 μm optical pulse train by heterodyne autocorrelation

Tatsuya Tomaru, Shigeki Kitajima, and Hiroaki Inoue

Appl. Phys. Lett. 69, 3978 (1996); http://dx.doi.org/10.1063/1.117843 (3 pages) | Cited 2 times

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A technique for measuring optical pulses, using heterodyne autocorrelation rather than a nonlinear process, is proposed. This method gives not only the pulse width, but also information about optical phase in a simple way. Practical measurement is demonstrated with linearly chirped weak optical pulse train from an actively model‐locked external‐cavity semiconductor laser. Pulse width and chirp are quantified. © 1996 American Institute of Physics.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Optical near‐field photocurrent spectroscopy: A new technique for analyzing microscopic aging processes in optoelectronic devices

A. Richter, J. W. Tomm, Ch. Lienau, and J. Luft

Appl. Phys. Lett. 69, 3981 (1996); http://dx.doi.org/10.1063/1.117844 (3 pages) | Cited 16 times

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The potential of optical near‐field photocurrent spectroscopy for analyzing microscopic aging processes in optoelectronic devices is demonstrated. The technique combines the subwavelength spatial resolution of near‐field optics with tunable laser excitation, allowing for selective investigation of specific parts of the device structure. Experiments on GaAs/(AlGa)As high power laser diodes before and after accelerated aging provide direct visualization of defect growth within the p‐i‐n junction and information on aging‐enhanced recombination processes close to the laser facet. The effect of wave guiding of the exciting light on the image formation is discussed. The nondestructiveness makes this technique a particularly attractive method for in situ analysis in high power laser diodes. © 1996 American Institute of Physics.
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07.60.Pb Conventional optical microscopes
42.55.Px Semiconductor lasers; laser diodes
85.60.Bt Optoelectronic device characterization, design, and modeling
72.40.+w Photoconduction and photovoltaic effects

Multiple cross switching in a two‐mode semiconductor laser

Pei‐Cheng Ku, Ching‐Fuh Lin, and Bor‐Lin Lee

Appl. Phys. Lett. 69, 3984 (1996); http://dx.doi.org/10.1063/1.117845 (3 pages) | Cited 4 times

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A multiple cross switching phenomenon is observed in a two‐mode semiconductor laser in an external cavity. Its physical origins are investigated. The changing temperature or injection current causes the variation of the refractive index and the length of the laser diode, leading to the shift of the modulated gain peaks of the anti‐reflection‐coated laser diode in the external cavity. Consequently, the two modes experience different gains periodically and the strong gain competition then leads to the multiple cross switching. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Vertical‐cavity surface‐emitting lasers with low‐ripple optical pump bands

K. J. Knopp, D. H. Christensen, and J. R. Hill

Appl. Phys. Lett. 69, 3987 (1996); http://dx.doi.org/10.1063/1.117846 (3 pages) | Cited 2 times

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We have used multilayer mirror optimization methods to enhance the coupling of pump light into vertical‐cavity surface‐emitting lasers (VCSELs). With previously reported devices, pump light was coupled into VCSEL cavities through interference notches in the mirror reflectance spectrum. This approach is sensitive to temperature dependent reflectance spectrum shifts. We have created devices with a wide pump‐band window of low reflectance. We report the simulation, growth, and optically pumped lasing of such optimized low‐ripple VCSELs. Further, broadband pump windows open the possibility of spectrally‐broad optical pumps and they eliminate need for costly tunable pump lasers. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Surface‐normal 3×3 non‐blocking wavelength‐selective crossbar using polymer‐based volume holograms

Charles Zhou and Ray T. Chen

Appl. Phys. Lett. 69, 3990 (1996); http://dx.doi.org/10.1063/1.117847 (3 pages) | Cited 1 time

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We present a 3×3 surface‐normal wavelength‐selective crossbar using polymer‐based volume holograms. A prototype device is demonstrated using the center wavelength of 775 nm and Δλ=10 nm. Employment of 1/4‐pitch graded‐index rod lenses reduces the required nine wavelengths to three while maintaining the 3×3 interconnects. The diffraction efficiencies of 75%, 83%, and 75% are experimentally confirmed for wavelength 765, 775, and 785 nm, respectively. Surface‐normal configuration eliminates the conventional edge‐coupling scheme which is vulnerable in a harsh environment. A 3×3 crossbar is demonstrated with a two‐way system insertion loss less than 3 dB and channel‐to‐channel cross talk less than 20 dB. © 1996 American Institute of Physics.
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42.40.Pa Volume holograms
42.79.Ry Gradient-index (GRIN) devices
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Observation of spontaneous emission microcavity effects in an external‐cavity surface‐emitting laser structure

J. V. Sandusky and S. R. J. Brueck

Appl. Phys. Lett. 69, 3993 (1996); http://dx.doi.org/10.1063/1.117848 (3 pages) | Cited 3 times

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We report both enhancement and inhibition of spectrally integrated, cavity‐normal room temperature spontaneous emission (SpE) in an external‐microcavity surface‐emitting laser as the cavity length is varied. The use of an external cavity permits changes in resonator length without altering the semiconductor properties. Measurements of the SpE radiation pattern and spectrum under conditions of enhancement and inhibition are compared to the macrocavity continuum limit. A transition of continuum behavior occurs as the cavity length is increased beyond the spontaneous emission coherence length. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Multisoliton generation by laser modes in a frequency doubling medium

Pascal Agin and George I. Stegeman

Appl. Phys. Lett. 69, 3996 (1996); http://dx.doi.org/10.1063/1.117849 (3 pages) | Cited 1 time

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We demonstrate that the number of solitons generated by laser modes with multiple power maxima in a phase‐matchable, second‐order, nonlinear optical medium can be explained by a model based on field overlap and neighboring soliton interactions. © 1996 American Institute of Physics.
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42.65.Tg Optical solitons; nonlinear guided waves
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Periodic electric field poling of KTiOPO4 using chemical patterning

W. P. Risk and S. D. Lau

Appl. Phys. Lett. 69, 3999 (1996); http://dx.doi.org/10.1063/1.117850 (3 pages) | Cited 9 times

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We report a technique for periodic poling of KTiOPO4 (KTP). In this approach, we exploit the observation that Rb‐exchanged regions of KTP resist electric field poling under conditions that produce domain inversion in unexchanged KTP. Thus, a pattern of Rb‐exchanged regions can be transformed into a corresponding pattern of domain inverted regions by application of a uniform electric field. We applied this technique to in situ poling of segmented waveguides and report quasiphase matched second‐harmonic generation in these devices. © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Gn Optical waveguides and couplers

Hybridized approach to new polymers exhibiting large photorefractivity

Zhonghua Peng, Ali Reza Gharavi, and Luping Yu

Appl. Phys. Lett. 69, 4002 (1996); http://dx.doi.org/10.1063/1.117851 (3 pages) | Cited 10 times

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We report on a new photorefractive polymer that contains an ionic tri(bispyridyl) ruthenium complex as the charge generating species, a conjugated polymer backbone as the charge transporting channel, and a nonlinear optical chromophore. The ruthenium complex was introduced to utilize its efficient photoinduced metal‐to‐ligand charge transfer process. This polymer shows greatly enhanced photorefractive performance; a large net optical gain of about 200 cm−1 was obtained at a zero external electric field. © 1996 American Institute of Physics.
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42.70.Jk Polymers and organics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Mechanism of self‐pumped phase conjugation in photorefractive crystals

Ping Xie, Jian‐Hua Dai, Peng‐Ye Wang, and Hong‐Jun Zhang

Appl. Phys. Lett. 69, 4005 (1996); http://dx.doi.org/10.1063/1.117852 (3 pages) | Cited 2 times

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A two‐dimensional model for the self‐pumped phase conjugation in a photorefractive crystal is presented. In the model, no internal reflections at a corner of the crystal are explicitly considered, aside from some low intensity scattered radiation at the crystal surfaces. The numerical simulations of the curved beam path inside the crystal show agreement with experimental observations. The numerical results of high‐reflectivity and high‐fidelity phase conjugation are consistent with experimental results. © 1996 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Mp Nonlinear optical crystals

Giant grown‐in octahedral inclusions in as‐grown silicon: voids versus silicon oxide precipitates

Jan Vanhellemont

Appl. Phys. Lett. 69, 4008 (1996); http://dx.doi.org/10.1063/1.117853 (3 pages) | Cited 2 times

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Straightforward thermodynamic considerations on critical precipitate size suggest that interstitial oxygen assisted void nucleation and growth during the cooling of a Czochralski grown silicon crystal after solidification from the melt is a likely process. The observed void sizes are in agreement with vacancy diffusion limited growth in the temperature range above 1100 °C. © 1996 American Institute of Physics.
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61.72.Qq Microscopic defects (voids, inclusions, etc.)
81.10.Fq Growth from melts; zone melting and refining
81.05.Cy Elemental semiconductors

An investigation on the leakage current and time dependent dielectric breakdown of ferroelectric lead–zirconate–titanate thin film capacitors for memory device applications

Jia‐lin Chen, Hong‐ming Chen, and Joseph Ya‐min Lee

Appl. Phys. Lett. 69, 4011 (1996); http://dx.doi.org/10.1063/1.117854 (3 pages) | Cited 10 times

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See Also: Erratum

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Lead–zirconate–titanate (PZT) is an interesting ferroelectric material for the application of DRAM and nonvolatile memory devices. In this work, metal‐PZT‐metal capacitors with Au and Pt as the top and the bottom electrodes are fabricated. The leakage current, time dependent dielectric breakdown (TDDB) lifetime and the correlation between them are studied. The leakage current is found to depend on the applied electric field in a power law relationship. The exponent in the power law relation is found to be 0.88 in the low field region (lower than 100 kV/cm) and 9.6 in the high field region (larger than 100 kV/cm). The TDDB of the PZT capacitors is measured. An extrapolation method is proposed to obtain the projected TDDB lifetime from the time to breakdown (tBD)data. The power law exponential extracted from the TDDB measurement in this method is found to be in good agreement with that obtained from the leakage current measurement. © 1996 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Jp Dielectric breakdown and space-charge effects
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
73.40.Rw Metal-insulator-metal structures

Dewetting of molten Sn on Au/Cu/Cr thin‐film metallization

C. Y. Liu, H. K. Kim, K. N. Tu, and P. A. Totta

Appl. Phys. Lett. 69, 4014 (1996); http://dx.doi.org/10.1063/1.117855 (3 pages) | Cited 13 times

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On Au/Cu/Cr thin film surface, a drop of molten Sn first spreads out to wet the surface, but it then pulls back to dewet. The latter is due to the spalling of Cu–Sn compounds and exposing the Cr surface to the molten Sn when all of the Cu film has been consumed by the wetting reaction. Dewetting is clearly undesirable for solder joints in electronic packaging; the phenomenon is presented here. © 1996 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
68.08.Bc Wetting
81.20.Vj Joining; welding

Local crystallographic texture and voiding in passivated copper interconnects

J. A. Nucci, R. R. Keller, J. E. Sanchez, and Y. Shacham‐Diamand

Appl. Phys. Lett. 69, 4017 (1996); http://dx.doi.org/10.1063/1.117856 (3 pages) | Cited 13 times

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A correlation between local crystallographic texture and stress‐induced void formation in tantalum‐encapsulated, copper interconnects was revealed by electron backscattering diffraction studies in a scanning electron microscope. Lines exhibiting an overall stronger 〈111〉 texture showed better resistance to void formation. Furthermore, grains adjacent to voids exhibited weaker 〈111〉 texture than grains in unvoided regions of the same line. The locally weaker 〈111〉 texture at voided locations suggests the presence of higher diffusivity, twist boundaries. This work, which represents the first characterization of local texture in stress voided, copper lines, helps to elucidate the relative importance of the thermodynamic and kinetic factors which govern void formation and growth. © 1996 American Institute of Physics.
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61.72.Dd Experimental determination of defects by diffraction and scattering
68.55.-a Thin film structure and morphology
85.40.Ls Metallization, contacts, interconnects; device isolation
81.05.Bx Metals, semimetals, and alloys

Surface enhanced Raman imaging of a patterned self‐assembled monolayer formed by microcontact printing on a silver film

X. M. Yang, D. A. Tryk, K. Hasimoto, and A. Fujishima

Appl. Phys. Lett. 69, 4020 (1996); http://dx.doi.org/10.1063/1.117857 (3 pages) | Cited 6 times

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The surface enhanced Raman scattering effect was used in conjunction with a micro‐Raman system to produce an image of a pattern, on an evaporated silver surface, formed by microcontact printing of p‐nitrothiophenol (PNTP). This surface is characterized by roughness on the scale of 50–100 nm. It was confirmed that this type of printing technique forms a self‐assembled monolayer with PNTP. Even without roughening of the silver surface, the surface enhancement provided a high contrast image. The resolution of the resulting image was approximately 1 μm. © 1996 American Institute of Physics.
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78.30.Er Solid metals and alloys
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.05.Bx Metals, semimetals, and alloys
81.65.Cf Surface cleaning, etching, patterning

Preparation of cubic boron nitride thin film by the helicon wave plasma enhanced chemical vapor deposition

Seon‐Hyo Kim, Ig‐Hyeon Kim, and Ki‐Sung Kim

Appl. Phys. Lett. 69, 4023 (1996); http://dx.doi.org/10.1063/1.117858 (3 pages) | Cited 2 times

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Cubic boron nitride (c‐BN) film was deposited on Si(100) substrate using the chemical vapor deposition process assisted by high density plasma of Helicon wave with Borazine (B3N3H6) precursor. It was found that the bombardment of ions with high flux and energy onto the film was necessarily required for synthesizing a c‐BN film. Increasing a negative rf bias on the substrate increased the formation fraction of c‐BN in the film. A nearly pure c‐BN phase was synthesized at the conditions of plasma density in the reactor and rf substrate bias, above 1011 cm−3 and −350 V, respectively. The phase identification of BN film was carried out by the transmission electron microscopy as well as Fourier transformed infrared spectroscopy. The infrared spectra for c‐BN film synthesized at the rf bias of −350 V appeared at 1093 cm−1 with a strong single peak, which is close to a value for the characteristic vibration mode of bulk c‐BN (1065 cm−1). The c‐BN in the film was also confirmed and found to be a fine poly‐crystalline with the grain sizes ranging from 200 to 400 Å. © 1996 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
68.55.Nq Composition and phase identification
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition

Processing independent photoluminescence response of chemically etched porous silicon

M. J. Winton, S. D. Russell, J. A. Wolk, and R. Gronsky

Appl. Phys. Lett. 69, 4026 (1996); http://dx.doi.org/10.1063/1.117859 (3 pages) | Cited 12 times

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Room temperature photoluminescence spectra from samples of chemically etched porous silicon were analyzed as a function of dopant type, dopant concentration, etchant chemistry, and etching times. In stark contrast to electrochemically etched porous silicon, no significant variations in peak location or width were observed to result from stain etching. This invariance of peak location is presumed to be due to either chemical or electronic passivation of the luminescent silicon nanostructures that prevents subsequent modification after their initial formation. © 1996 American Institute of Physics.
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78.55.Mb Porous materials
81.65.Cf Surface cleaning, etching, patterning
81.40.Tv Optical and dielectric properties related to treatment conditions
81.05.Cy Elemental semiconductors

Fabrication of GaInAs quantum disks using self‐organized InP islands as a mask in wet chemical etching

M. Sopanen, H. Lipsanen, and J. Ahopelto

Appl. Phys. Lett. 69, 4029 (1996); http://dx.doi.org/10.1063/1.117860 (3 pages)

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GaInAs quantum disks are fabricated by wet chemical etching from a GaInAs/GaAs near‐surface quantum well using self‐organized InP islands as an etch mask. InP islands are formed in coherent Stranski–Krastanow growth mode by metalorganic vapor phase epitaxy. The free‐standing GaInAs/GaAs columns, produced by a three‐step etching process, are overgrown at 550 °C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown reference quantum well. © 1996 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.65.Cf Surface cleaning, etching, patterning
78.66.Fd III-V semiconductors

Effect of growth‐rate ratio on surface morphology of homoepitaxial diamond (100) and (111)

Robin E. Rawles, William G. Morris, and Mark P. D’Evelyn

Appl. Phys. Lett. 69, 4032 (1996); http://dx.doi.org/10.1063/1.117861 (3 pages) | Cited 2 times

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Homoepitaxial diamond (100) and (111) films were grown side by side in a hot filament reactor at 875 °C with and without oxygen. The growth rates and surface morphologies were monitored by in situ Fizeau interferometry and atomic force microscopy, respectively. Penetration twins were observed on the (100) surface at a low (100)‐to‐(111) growth‐rate ratio but not at a high value, as expected. Surprisingly, penetration twins were not observed on the (111) surfaces, which were dominated by contact twins in both cases. Implications of these results for microstructural control of diamond films and the effect of oxygen additions are discussed. © 1996 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Electron spectroscopy study of the silver‐diamond(100)‐H interface

M. Pitter, M. B. Hugenschmidt, and R. J. Behm

Appl. Phys. Lett. 69, 4035 (1996); http://dx.doi.org/10.1063/1.117862 (3 pages) | Cited 1 time

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The interaction between silver and a boron doped diamond single crystal has been characterized by Auger electron spectroscopy, ionization loss spectroscopy, and low energy electron diffraction. Silver deposition (equivalent film thickness 3–15 Å) at room temperature results in the formation of silver islands. During subsequent thermal annealing, silver islands cluster and finally desorb. In contrast to other metals, neither intermixing nor graphitization or carbide formation at the silver‐diamond interface are observed. © 1996 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
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