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8 Jul 1996

Volume 69, Issue 2, pp. 141-283

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The molecular beam epitaxial growth of InSb on (111)B GaAs

E. Michel, J. D. Kim, S. Javadpour, J. Xu, I. Ferguson, and M. Razeghi

Appl. Phys. Lett. 69, 215 (1996); http://dx.doi.org/10.1063/1.117376 (3 pages) | Cited 10 times

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The molecular beam epitaxial growth of InSb on (111)B GaAs has been investigated. It was found that for a given Sb/In ratio, a higher growth temperature was required for the growth of InSb on (111)B GaAs compared to that on (001) GaAs. This difference has been attributed to the bonding characteristics of the (111)B and (001) surface. Once growth had been optimized, it was found that the material characteristics of (111)B InSb were almost identical to that of (001) InSb, i.e., independent of orientation. For example, the x‐ray full width at half‐maximum and 300 K mobility had the same absolute values for (111) InSb and (001)InSb and followed the same dependence with the sample thickness. Te was found to be a well‐behaved n‐type dopant for (111)B InSb. © 1996 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Rapid relaxation of hot carriers in GaAs fractional‐layer superlattice quantum wires

A. Chavez‐Pirson, H. Ando, H. Saito, N. Kobayashi, and H. Kanbe

Appl. Phys. Lett. 69, 218 (1996); http://dx.doi.org/10.1063/1.117377 (3 pages) | Cited 5 times

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We measure the hot carrier relaxation in two GaAs quantum wire arrays made from fractional‐layer superlattices (FLS). Using femtosecond optical pump–probe spectroscopy, we measure the differential transmission spectra for various pump–probe time delays from which we determine the carrier thermalization times. Although the two FLS structures have different degrees of one‐dimensional confinement at the band edge, we observe rapid (<2 ps) and efficient carrier relaxation in both cases with no sign of the inhibited relaxation predicted for ideal one‐dimensional structures. We believe that FLS quantum wire structures avoid relaxation bottlenecks because the shape of the FLS confinement potential produces high energy states which are two dimensional in character and which facilitate rapid energy relaxation. © 1996 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors

In situ real‐time study of chemical etching process of Si(100) using light scattering

Y.‐P. Zhao, Y.‐J. Wu, H.‐N. Yang, G.‐C. Wang, and T.‐M. Lu

Appl. Phys. Lett. 69, 221 (1996); http://dx.doi.org/10.1063/1.117378 (3 pages) | Cited 5 times

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We report the development of an in situ real‐time light scattering technique to study the wet chemical etching process of Si(100). Based on a simple scattering theory, the number of etch pits and other statistical parameters such as correlation length and interface width on a pitted surface are extracted from the scattering profile. The time evolution of the surface morphology can be interpreted by a simple rate equation. © 1996 American Institute of Physics.
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81.65.Cf Surface cleaning, etching, patterning
42.25.Fx Diffraction and scattering
68.55.-a Thin film structure and morphology

Electroluminescence from triplet excited states of benzophenone

Satoshi Hoshino and Hiroyuki Suzuki

Appl. Phys. Lett. 69, 224 (1996); http://dx.doi.org/10.1063/1.117379 (3 pages) | Cited 24 times

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We report the electroluminescent characteristics of organic multilayer light‐emitting diodes (LEDs) with a benzophenone (BP) dispersed poly(methylmethacrylate) (PMMA) film as an emitting layer. The electroluminescence (EL) intensity of these LEDs increases with decreasing temperature from 273 to 100 K when they are operated at the same voltages or the same current densities. The EL spectrum of the LEDs, which peaks at around 450 nm, is identical to the phosphorescence spectrum of BP in PMMA. In addition, the EL decay time was determined as 46.8 μs at 100 K by applying a rectangular voltage pulse. These results indicate that the EL of the LED originates from the triplet excited states of BP. © 1996 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
85.60.Jb Light-emitting devices

Lattice relaxation and pressure dependence of carbon and silicon impurity states in cubic boron nitride

V. A. Gubanov, L. A. Hemstreet, C. Y. Fong, and Barry M. Klein

Appl. Phys. Lett. 69, 227 (1996); http://dx.doi.org/10.1063/1.117380 (3 pages) | Cited 9 times

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Impurity states in environments of relaxed crystal lattices around substitutional silicon and carbon impurities at both cation and anion sites in zinc‐blende boron nitride (c‐BN) have been investigated by the tight binding‐linear combination of muffin tin orbitals‐atomic sphere approximation (TB‐LMTO‐ASA) method. The pressure dependence of the impurity states of both silicon (Si)‐ and carbon (C)‐doped c‐BN is also investigated in the range of 0%–9% lattice compression. Shifts of the impurity bands, and the localization of the charge distributions under pressure are analyzed. © 1996 American Institute of Physics.
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71.55.Eq III-V semiconductors
71.20.Nr Semiconductor compounds
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)

Metal‐insulator‐semiconductor structures on p‐type GaAs with low interface state density

Zhi Chen, Dae‐Gyu Park, Francke Stengal, S. Noor Mohammad, and Hadis Morkoç

Appl. Phys. Lett. 69, 230 (1996); http://dx.doi.org/10.1063/1.117933 (3 pages) | Cited 13 times

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Interfacial properties of in situ deposited Si3N4/Si/p‐GaAs metal‐insulator‐semiconductor structures have been investigated. Conductance loss measurements show that a minimum interface trap density as low as 5.5×1010 cm−1 eV−1 has been achieved on p‐type GaAs by using a high quality strained Si interlayer. The quasistatic and high‐frequency capacitance‐voltage measurements as well as the theoretical high‐frequency capacitance‐voltage calculation clearly demonstrate the accumulation, depletion, and inversion regions. The interface trap density as a function of the band‐gap energy near the midgap has been determined with the conductance method. The reduced band bending (0.84 V) may be mainly caused by the narrower band gap of the strained Si interlayer. © 1996 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.At Surface states, band structure, electron density of states
72.80.Ey III-V and II-VI semiconductors

Amphoteric properties of substitutional carbon impurity in GaN and AlN

P. Bogusławski, E. L. Briggs, and J. Bernholc

Appl. Phys. Lett. 69, 233 (1996); http://dx.doi.org/10.1063/1.117934 (3 pages) | Cited 54 times

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Electronic structure and formation energies of substitutional carbon impurities in hexagonal GaN and AlN were studied by quantum molecular dynamics. Substitutions on both cation and anion sites were considered. Ccation is a shallow donor, while CN is a shallow acceptor. A DX‐like configuration is metastable for CGa and CAl0, and stable for CAl−. The solubility of carbon is excellent, but it is accompanied by efficient self‐compensation of carbon acceptors by carbon donors. This is due to two factors: (i) the large energy gain induced by electron transfer from Ccation to CN, which is close to the band gap energy, and (ii) the large binding energy (∼1 eV) of nearest neighbor Ccation+‐CN− pairs. © 1996 American Institute of Physics.
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71.55.Eq III-V semiconductors
71.15.Pd Molecular dynamics calculations (Car-Parrinello) and other numerical simulations
61.72.uj III-V and II-VI semiconductors

Angle etch control for silicon carbide power devices

F. Lanois, P. Lassagne, D. Planson, and M. L. Locatelli

Appl. Phys. Lett. 69, 236 (1996); http://dx.doi.org/10.1063/1.117935 (3 pages) | Cited 11 times

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Silicon carbide plasma etching results are reported. Etching experiments are performed in a distributed electron cyclotron resonance reactor, using a SF6/O2 gas mixture, on both 3C‐ and 6H‐SiC. A special interest has been given to the slope of the etched sidewalls. Slopes between 30° and 80° have been achieved by varying selectivities between SiC and the SiO2 masking layer. Two parameters have been investigated to modulate selectivity: bias voltage and O2 additive flow. A wide range of selectivities (from 1 to 6.5) has been obtained for suitable etch rate (100 to 270 nm/min) with very smooth surfaces. © 1996 American Institute of Physics.
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81.65.Cf Surface cleaning, etching, patterning
81.05.Hd Other semiconductors

Enhanced diffusion in nonstoichiometric quantum wells and the decay of supersaturated vacancy concentrations

I. Lahiri, D. D. Nolte, M. R. Melloch, J. M. Woodall, and W. Walukiewicz

Appl. Phys. Lett. 69, 239 (1996); http://dx.doi.org/10.1063/1.117936 (3 pages) | Cited 13 times

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Enhanced superlattice disordering in nonstoichiometric AlAs/GaAs quantum wells exhibits weak temperature dependence because of the decay of the supersaturated concentration of group‐III vacancies. We present a formalism for transient enhanced diffusion in nonstoichiometric materials with which we can extract migration enthalpies Hm by assuming that the vacancy decay is thermally activated with an enthalpy Ha. By analyzing the electroabsorption from the quantum‐confined Stark effect for a set of isochronal and isothermal anneals, we extract a migration enthalpy Hm=(1.8±0.2) eV for group‐III vacancies, as well as an activation enthalpy Ha=(0.7±0.2) eV for vacancy annihilation. © 1996 American Institute of Physics.
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66.30.Lw Diffusion of other defects
61.66.Bi Elemental solids
61.66.Dk Alloys
61.72.J- Point defects and defect clusters

Electronic and structural properties of GaN grown by hydride vapor phase epitaxy

W. Götz, L. T. Romano, B. S. Krusor, N. M. Johnson, and R. J. Molnar

Appl. Phys. Lett. 69, 242 (1996); http://dx.doi.org/10.1063/1.117937 (3 pages) | Cited 40 times

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The electronic and structural properties of GaN were investigated for heteroepitaxial layers grown by hydride vapor phase epitaxy. Uniform film nucleation on the sapphire substrates was facilitated by a GaCl pretreatment. The films were all unintentionally doped n type. Variable temperature Hall effect measurements reveal electron concentrations as low as 2×1017 cm−3 and electron mobilities as high as 460 cm2/V s at 300 K. The films exhibit bound exciton photoluminescence lines with a full width at half‐maximum (FWHM) of 2.42 meV at 2 K. Transmission electron microscopy studies of the GaN/sapphire interface reveal a ∼200 nm thick, highly defective GaN layer consisting predominantly of stacking faults. The excellent quality of these GaN films is attributed to this ‘‘auto‐buffer’’ layer which enables growth of GaN cells with a dislocation density of ∼3×108 cm−2 after ∼12 μm of film growth. © 1996 American Institute of Physics.
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68.55.-a Thin film structure and morphology
73.61.Ey III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

High‐speed GaAs metal‐semiconductor‐metal photodetectors with recessed metal electrodes

R.‐H. Yuang, Y.‐J. Chien, J.‐L. Shieh, and J.‐I. Chyi

Appl. Phys. Lett. 69, 245 (1996); http://dx.doi.org/10.1063/1.117938 (3 pages) | Cited 5 times

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The GaAs metal‐semiconductor‐metal photodetector (MSM‐PD) with recessed metal electrodes have been fabricated and characterized. The recessed structure allows very short photocarrier sweep‐out time because of both a strengthened electric field in the active region and a shortened distance for the photocarriers to reach the electrodes. Improved high‐speed performance and enhanced peak amplitude in the temporal response can thus be obtained simultaneously. There is about a 60% and 50% improvement in the fall time and peak amplitude of the temporal response at 5 V bias over the conventional device, respectively. The measured results also show that high‐speed operation can be achieved at a lower bias voltage for the GaAs MSM‐PD with recessed metal electrodes as compared to the conventional one. Two‐dimensional simulation was carried out to give an insight into the operation principle of this device. © 1996 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Sx Metal-semiconductor-metal structures

Reliable operation of strain‐compensated 1.06 μm InGaAs/InGaAsP/GaAs single quantum well lasers

Toshiaki Fukunaga, Mitsugu Wada, and Toshiro Hayakawa

Appl. Phys. Lett. 69, 248 (1996); http://dx.doi.org/10.1063/1.117939 (3 pages) | Cited 20 times

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We report the reliable operation of strain‐compensated InGaAs/InGaAsP/GaAs 1.06 μm separate confinement heterostructure single‐quantum‐well laser diodes with tensile‐strained InGaAsP barriers grown on GaAs substrate. High band‐gap strain‐compensation barriers are used to suppress the carrier leakage from a quantum well. This device has a high characteristic temperature of 268 K and low threshold current density of 200 A/cm2 with 0.75 mm cavity length. It was found that the characteristics of lasers without strain‐compensation are worse than those of strain‐compensated lasers at 1.06 μm wavelength. No catastrophic failure in strain‐compensated lasers is observed during 1000 h aging test at 25 °C under an automatic power control of 250 mW while all 1.06 μm lasers without strain‐compensation show catastrophic failure within 1000 h. It suggests that the crystal quality of laser with strain compensation is much better than that without strain compensation. The formation of defects caused by the presence of the well with highly compressive strain more than 2% is significantly suppressed using strain‐compensated layer with moderate tensile strain of 0.7%. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Lattice‐matching SiC substrates with GaN

Shang Yuan Ren and John D. Dow

Appl. Phys. Lett. 69, 251 (1996); http://dx.doi.org/10.1063/1.117940 (3 pages) | Cited 27 times

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Using arguments based on both electronic structure calculations and ionic radii, we propose that interfacial charges contribute to the ionic part of the lattice mismatch. As a result, the Si‐terminated 6H–SiC(0001) surface is a superior substrate for GaN to the C‐terminated surface. This viewpoint unifies (i) the Sasaki–Matsuoka proposal that substrate quality depends on electrical polarity and (ii) the conventional viewpoint that the best substrate has zero lattice mismatch with the film deposited on it. © 1996 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.-r Electron states at surfaces and interfaces
68.35.Fx Diffusion; interface formation

High field flashover strength of intrinsic gallium nitride and aluminum nitride in vacuum

M. A. Khan, O. Chen, T. S. Sudarshan, and G. Gradinaru

Appl. Phys. Lett. 69, 254 (1996); http://dx.doi.org/10.1063/1.117941 (3 pages) | Cited 1 time

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The behavior of intrinsic materials (i‐GaN and i‐AlN) at high fields and room temperature, using small gap lateral test devices in vacuum ambient, is analyzed. Unprecedented hold‐off fields of more than 375 kV/cm were obtained for intrinsic nitride layers grown on sapphire. The superior high field performance of intrinsic nitride materials indicate a great potential of nitride semiconductors for the next generation high power/high voltage/high frequency/high temperature electronic devices. © 1996 American Institute of Physics.
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73.40.Sx Metal-semiconductor-metal structures
73.25.+i Surface conductivity and carrier phenomena
72.20.Ht High-field and nonlinear effects

Strain‐modulated epitaxy: A flexible approach to 3‐D band structure engineering without surface patterning

Carrie Carter‐Coman, April S. Brown, Robert Bicknell‐Tassius, Nan Marie Jokerst, and Mark Allen

Appl. Phys. Lett. 69, 257 (1996); http://dx.doi.org/10.1063/1.117942 (3 pages) | Cited 10 times

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Thin compliant growth substrates have been used to reduce the strain in lattice‐mismatched overlayers during epitaxial growth. This letter reports a new thin compliant substrate technology which allows these thin substrates to be patterned on the bottom, bonded surface. This lateral strain variation (inverted stressor) in the growing film can be combined with the additional effects of strain‐dependent growth kinetics to realize the lateral control of composition and thickness without any surface topography on the substrate. Initial demonstrations of the growth of InGaAs on GaAs bottom‐patterned thin substrates are presented herein. © 1996 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.40.Sz Deposition technology
68.60.Bs Mechanical and acoustical properties

Heterodyne detection of THz radiation with a superconducting hot‐electron bolometer mixer

A. D. Semenov, Yu. P. Gousev, R. S. Nebosis, K. F. Renk, P. Yagoubov, B. M. Voronov, G. N. Gol’tsman, V. D. Syomash, and E. M. Gershenzon

Appl. Phys. Lett. 69, 260 (1996); http://dx.doi.org/10.1063/1.117943 (3 pages) | Cited 6 times

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We report on the use of a superconducting hot‐electron bolometer mixer for heterodyne detection of terahertz radiation. Radiation with a wavelength of 119 μm was coupled to the mixer, a NbN microbridge, by a hybrid quasioptical antenna consisting of an extended hyperhemispherical lens and a planar logarithmic spiral antenna. We found, at an intermediate frequency of 1.5 GHz, a system double side band noise temperature of ≊40 000 K and conversion losses of 25 dB. We also discuss the possibilities of further improvement of the mixer performance. © 1996 American Institute of Physics.
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85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
74.78.-w Superconducting films and low-dimensional structures
42.82.Fv Hybrid systems

Growth, transport, and magnetic properties of Pr0.67Ca0.33MnO3 thin films

S. K. Singh, S. B. Palmer, D. McK. Paul, and M. R. Lees

Appl. Phys. Lett. 69, 263 (1996); http://dx.doi.org/10.1063/1.117944 (3 pages) | Cited 16 times

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We have grown Pr0.67Ca0.33MnO3 thin films on LaAlO3 using pulsed laser deposition. Below 50 K, a field induced insulator‐metal transition results in changes in resistivity of at least 6 orders of magnitude. The field induced conducting state is metastable at low temperature. The temperature dependence of the resistivity exhibits considerable hysteresis in a field of 40 kOe but becomes reversible in a field of 80 kOe. © 1996 American Institute of Physics.
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75.70.Ak Magnetic properties of monolayers and thin films
81.15.Fg Pulsed laser ablation deposition
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.61.Ng Insulators

Magnetostatic surface wave propagation in a yttrium iron garnet double layer

A. I. Voronko, P. M. Vetoshko, V. B. Volkovoy, A. D. Boardman, J. W. Boyle, and R. F. Wallis

Appl. Phys. Lett. 69, 266 (1996); http://dx.doi.org/10.1063/1.117945 (3 pages)

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Energy switching is investigated, both theoretically and experimentally, between two identical ferromagnetic films. The frequency region, and the applied magnetic field direction selected, permits a magnetostatic surface wave to be generated in each film. After the exact theory for this magnetostatic directional coupler is given, an experimental study of the evolution of the magnetic field distribution is presented. Good agreement between theory and experiment is obtained. © 1996 American Institute of Physics.
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75.70.Ak Magnetic properties of monolayers and thin films
75.30.Ds Spin waves
85.70.Ec Magnetostrictive, magnetoacoustic, and magnetostatic devices

Single‐atom point contact devices fabricated with an atomic force microscope

E. S. Snow, D. Park, and P. M. Campbell

Appl. Phys. Lett. 69, 269 (1996); http://dx.doi.org/10.1063/1.117946 (3 pages) | Cited 109 times

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The fabrication of atomic point contacts by using anodic oxidation of thin Al films with an atomic force microscope is reported. In situ electrical measurements were used as feedback to control the fabrication of Al nanowires that were subsequently anodized through their cross section to form point contacts. When the conductance of a point contact is reduced below ∼5×10−4 S it starts to decrease in discrete steps of ∼2e2/h. In some devices we are able to stabilize the conductance at a value near 2e2/h which corresponds to a single, atomic‐sized conducting channel.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
07.79.Lh Atomic force microscopes
73.40.Rw Metal-insulator-metal structures

Passive pulse shaping of femtosecond pulses using birefringent dispersive media

C. Radzewicz, M. J. la Grone, and J. S. Krasinski

Appl. Phys. Lett. 69, 272 (1996); http://dx.doi.org/10.1063/1.117947 (3 pages) | Cited 2 times

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Theoretical and experimental study of linear propagation of femtosecond laser pulses through a birefringent dispersive medium is presented. Ordinary and extraordinary components of the pulse propagate through the crystal with different group velocities and they acquire different chirp. We show that, under proper circumstances, the output pulse shows significant time dependent change of polarization. The effect can be used to shape such pulses yielding, for example, a series of equally spaced short pulses. © 1996 American Institute of Physics.
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78.20.Fm Birefringence
42.25.Lc Birefringence

Simple two‐slit interference electro‐optic coefficients measurement technique and efficient coplanar electrode poling of polymer thin films

Srinath Kalluri, Sean Garner, Mehrdad Ziari, William H. Steier, Yongqiang Shi, and Larry R. Dalton

Appl. Phys. Lett. 69, 275 (1996); http://dx.doi.org/10.1063/1.117948 (3 pages) | Cited 9 times

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A novel technique using coplanar electrodes for measuring the electro‐optic coefficients of in‐plane poled polymer thin films is presented. This method does not require waveguiding and uses a simple optical setup. In this technique the index across one slit of a two‐slit aperture is modulated by an electric field and the modulated interference pattern of light after it propagates through these slits is detected in the far field. A coplanar electrode pattern was used for both in‐plane poling and for measuring the r coefficients in a two‐arm push–pull configuration. The maximum poling strength achieved was 200 V/μm. An r33 coefficients of 12.5 pm/V at 1.3 μm, the wavelength dispersion of r33 and the r33/r13 ratio as a function of the poling field, were measured for the PURDR19 electro‐optic polymer. © 1996 American Institute of Physics.
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07.60.Ly Interferometers
78.20.Jq Electro-optical effects
78.66.Qn Polymers; organic compounds

Synthesis of carbon nanotubes from bulk polymer

Woo‐Seok Cho, Etsuo Hamada, Yukihito Kondo, and Kunio Takayanagi

Appl. Phys. Lett. 69, 278 (1996); http://dx.doi.org/10.1063/1.117949 (2 pages) | Cited 16 times

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Carbon nanotubes have been synthesized by heat treating the polymer at 400 °C in air which was obtained by polyesterification between citric acid and ethylene glycol. Transmission electron micrographs and an electron diffraction pattern showed the formation of carbon nanotubes. The diameter of the tubes ranged from 5 to 20 nm, whereas the lengths were less than 1 μm. © 1996 American Institute of Physics.
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81.05.ub Fullerenes and related materials
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Heat to light energy conversion by emitters doped with rare‐earth metal ions

V. V. Golovlev, C. H. Winston Chen, and W. R. Garrett

Appl. Phys. Lett. 69, 280 (1996); http://dx.doi.org/10.1063/1.117950 (3 pages) | Cited 7 times

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A thermodynamical consideration of a selective wavelength emitter for thermophotovoltaic energy generation is presented to express emitter emission properties through spectroscopic parameters of dopant atoms. It is found the heat‐light conversion can produce nonequilibrium conditions in the emitter material due to radiative cooling of the atomic excited states. A possible influence of inter‐ and intra‐atomic energy transitions to emitter parameters is discussed. © 1996 American Institute of Physics.
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84.60.Jt Photoelectric conversion
79.40.+z Thermionic emission
FREE

Erratum: ‘‘All‐optical programmable AND gate implementation in a germanium‐doped silica planar waveguide’’ [Appl. Phys. Lett. 67, 3532 (1995)]

P. M. Ranon, I. Dajani, J. J. Kester, and T. G. Alley

Appl. Phys. Lett. 69, 283 (1996); http://dx.doi.org/10.1063/1.118162 (1 page) | Cited 1 time

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Abstract Unavailable
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
99.10.Cd Errata
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