The molecular beam epitaxial growth of InSb on (111)B GaAs has been investigated. It was found that for a given Sb/In ratio, a higher growth temperature was required for the growth of InSb on (111)B GaAs compared to that on (001) GaAs. This difference has been attributed to the bonding characteristics of the (111)B and (001) surface. Once growth had been optimized, it was found that the material characteristics of (111)B InSb were almost identical to that of (001) InSb, i.e., independent of orientation. For example, the x‐ray full width at half‐maximum and 300 K mobility had the same absolute values for (111) InSb and (001)InSb and followed the same dependence with the sample thickness. Te was found to be a well‐behaved n‐type dopant for (111)B InSb. © 1996 American Institute of Physics.