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Applied Physics Letters / Volume 69 / Issue 3
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Appl. Phys. Lett. 69, 363 (1996); http://dx.doi.org/10.1063/1.118061 (3 pages)

(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

H. Ohno1, A. Shen1, F. Matsukura1, A. Oiwa2, A. Endo2, S. Katsumoto2, and Y. Iye2

1Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980‐77, Japan
2Institute for Solid State Physics, University of Tokyo, Tokyo 106, Japan

(Received 2 February 1996; accepted 10 May 1996)

A new GaAs‐based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy. The lattice constant of (Ga,Mn)As films was determined by x‐ray diffraction and shown to increase with the increase of Mn composition, x. Well‐aligned in‐plane ferromagnetic order was observed by magnetization measurements. Magnetotransport measurements revealed the occurrence of anomalous Hall effect in the (Ga,Mn)As layer. © 1996 American Institute of Physics.

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KEYWORDS and PACS

Keywords

MAGNETIC SEMICONDUCTORS, GALLIUM ARSENIDES, MANGANESE ARSENIDES, MOLECULAR BEAM EPITAXY, MAGNETORESISTANCE, MAGNETIZATION, HALL EFFECT, LATTICE PARAMETERS, XRD

PACS

  • 75.50.Pp

    Magnetic semiconductors

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 73.50.Jt

    Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.118061

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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