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5 Aug 1996

Volume 69, Issue 6, pp. 719-862

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Microdroplet dye laser enhancing effects in dye‐highly scattering intralipid mixture

Shinji Tanosaki, Hiroshi Taniguchi, Kazuhiro Tsujita, and Humio Inaba

Appl. Phys. Lett. 69, 719 (1996); http://dx.doi.org/10.1063/1.117869 (3 pages) | Cited 9 times

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The significant effect of fat emulsion intralipid‐10% mixing on lasing behaviors of liquid microdroplets was studied using rhodamine 6G dye. This highly scattering medium allows one to make the high‐gain laser dye‐soft scatterers microsystems that can provide well‐defined lasing threshold and one‐order or more magnitude enhancement of emission intensity with suitable (optimum) conditions of the mixing ratio, in comparison with original neat‐dye lasing microdroplets. We also present and discuss the measured results of input–output intensities for different dye concentrations and dye‐intralipid mixing ratios, and microscope images of spatial distribution of emission from both the microdroplets containing neat‐dye and dye‐intralipid mixture. © 1996 American Institute of Physics.
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42.55.Mv Dye lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.45.+h Stimulated emission

Mode behavior and high resolution spectra of circularly‐symmetric GaAs‐AlGaAs air‐post vertical cavity surface emitting lasers

J. E. Epler, S. Gehrsitz, K. H. Gulden, M. Moser, H. C. Sigg, and H. W. Lehmann

Appl. Phys. Lett. 69, 722 (1996); http://dx.doi.org/10.1063/1.117870 (3 pages) | Cited 26 times

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The mode behavior of symmetric air‐post vertical cavity surface emitting lasers is investigated using a unique tandem triple‐pass Fabry–Perot interferometer as well as standard characterization techniques. A series of high resolution spectra taken at various current levels demonstrates relaxation oscillations of the fundamental mode and the lifting of mode degeneracy by crystal birefringence and structural anisotropy. Near field images and L–I measurements identify the discontinuous jumps in mode number and polarization. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Bt Optoelectronic device characterization, design, and modeling

Gray‐scale in polymer‐stabilized antiferroelectric liquid crystal displays

J. Strauss and H.‐S. Kitzerow

Appl. Phys. Lett. 69, 725 (1996); http://dx.doi.org/10.1063/1.117871 (3 pages) | Cited 10 times

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We have investigated an antiferroelectric liquid crystal which is stabilized by a polymer network. The latter is formed by in situ photopolymerization of a mesogenic diacrylate. The pure liquid crystalline monomer shows the well‐known tristable electro‐optic switching due to a field induced transition from the antiferroelectric to the ferroelectric state. The change of the optical transmittance due to this transition becomes more continuous if a polymer network is present. Thus, different gray shades can be easily achieved in polymer‐stabilized antiferroelectric liquid crystals. © 1996 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
77.84.Nh Liquids, emulsions, and suspensions; liquid crystals
78.20.Jq Electro-optical effects

Photorefractive effect in a photoconductive electro‐optic carbazole trimer

Liming Wang, Yadong Zhang, Tatsuo Wada, and Hiroyuki Sasabe

Appl. Phys. Lett. 69, 728 (1996); http://dx.doi.org/10.1063/1.117872 (3 pages) | Cited 32 times

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We present an experimental study of the photorefractive effect in a multifunctional carbazole trimer sensitized with 2,4,7‐trinitro‐9‐fluorenone. The trimer consists of a central carbazole ring which is conjugated with two 6‐dicyanovinylcarbazoles through ethynylene groups. It exhibits intrinsically photocarrier transporting, electro‐optic, film‐forming, and room‐temperature poling properties. Photorefractive effect at a wavelength of 633 nm was demonstrated by measuring the phase shift of refractive index and asymmetric energy transfer in a two‐beam coupling experiment. A large net photorefractive gain coefficient (Γ‐α) of 76/cm was obtained in a sensitizer‐optimized material. A four‐wave mixing experiment was carried out to measure the magnitude of index modulation and dynamics of the grating formation. © 1996 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Jk Polymers and organics
72.40.+w Photoconduction and photovoltaic effects

Phase‐matched second‐harmonic generation at 789.5 nm in a GaSe crystal

L. Kador, D. Haarer, K. R. Allakhverdiev, and E. Yu. Salaev

Appl. Phys. Lett. 69, 731 (1996); http://dx.doi.org/10.1063/1.117873 (3 pages) | Cited 7 times

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Phase‐matched second‐harmonic generation in the highly χ(2)‐active layered semiconductor GaSe is demonstrated in the near‐infrared frequency region. Due to the high indices of refraction, the internal phase‐matching angle of about 30° is beyond the critical angle of total reflection for a z‐cut crystal. This problem is overcome by sandwiching the crystal between two half‐cylindrical glass rods, which leads to a shift of the critical angle to larger values. © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Three‐layered multicolor organic electroluminescent device

Masayoshi Yoshida, Akihiko Fujii, Yutaka Ohmori, and Katsumi Yoshino

Appl. Phys. Lett. 69, 734 (1996); http://dx.doi.org/10.1063/1.117874 (3 pages) | Cited 39 times

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We have realized a three‐layered multicolor organic electroluminescent device utilizing poly (9,9‐dihexylfluorene) and perylene derivatives as emission layers, with diamine derivatives as an electron blocking layer. Emission colors could be selected either blue or red by changing the polarity of the applied voltage. By driving with an ac biased electric field, both emission colors were observed and the intensity ratio of each emission color was modulated by the frequency of the applied ac field. © 1996 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.65.+h Molecular electronic devices
78.60.Fi Electroluminescence
42.79.Kr Display devices, liquid-crystal devices

Optimization of four‐wave mixing conversion efficiency in the presence of nonlinear loss

A. M. Darwish, E. P. Ippen, H. Q. Le, J. P. Donnelly, and S. H. Groves

Appl. Phys. Lett. 69, 737 (1996); http://dx.doi.org/10.1063/1.117875 (3 pages) | Cited 17 times

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We analyze the effect of nonlinear loss on four‐wave mixing (FWM) conversion efficiency. Maximum conversion efficiency is geometry independent and equal to e−2∣χ(3)/Im{χ(3)}∣2 when nonlinear loss dominates. Optimum device length and operating conditions are obtained and theoretical results are verified with a picosecond pulse FWM experiment. © 1996 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.82.Et Waveguides, couplers, and arrays

Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates

W. Shan, A. J. Fischer, J. J. Song, G. E. Bulman, H. S. Kong, M. T. Leonard, W. G. Perry, M. D. Bremser, and R. F. Davis

Appl. Phys. Lett. 69, 740 (1996); http://dx.doi.org/10.1063/1.117876 (3 pages) | Cited 34 times

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We present the results of spectroscopic studies on GaN based epitaxial materials on SiC substrates by metalorganic chemical vapor deposition. A variety of techniques has been used to study the optical properties of GaN epilayers and GaN/AlGaN heterostructures. Sharp spectral structures associated with the intrinsic free excitons were observed by photoluminescence and reflectance measurements from GaN based materials grown on SiC substrates. The residual strain was found to have a strong influence in determining the energies of exciton transitions. Picosecond relaxation studies of exciton decay dynamics suggest that an AlGaN cladding layer with a small mole fraction of AlN can be relatively effective in enhancing the radiative recombination rate for excitons by reducing the density of dislocations and suppressing surface recombination velocity in the GaN active layer for the GaN/AlGaN heterostructure samples. © 1996 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics

Reflection properties and defect formation in photonic crystals

E. Özbay and B. Temelkuran

Appl. Phys. Lett. 69, 743 (1996); http://dx.doi.org/10.1063/1.117877 (3 pages) | Cited 27 times

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We have investigated the surface reflection properties of a layer‐by‐layer photonic crystal. By using a Fabry–Perot resonant cavity analogy along with the reflection‐phase information of the photonic crystal, we predicted defect frequencies of planar defect structures. Our predictions were in good agreement with the measured defect frequencies. Our simple model can also predict and explain double defect formation within the photonic band gap. © 1996 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
41.20.Jb Electromagnetic wave propagation; radiowave propagation

High‐speed electrical sampling using optical second‐harmonic generation

Ajay Nahata, Tony F. Heinz, and James A. Misewich

Appl. Phys. Lett. 69, 746 (1996); http://dx.doi.org/10.1063/1.117878 (3 pages) | Cited 18 times

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We report the application of optical second‐harmonic generation to the measurement of ultrafast electrical pulses. The technique relies on the sensitivity of the second‐harmonic response to electric fields in centrosymmetric materials. Electrical pulses propagating on a silicon‐based coplanar transmission line have been characterized with subpicosecond time resolution and 100 mV/√Hz sensitivity. We have measured the bias dependence of the second harmonic intensity over a 20 V range and have used this data to calibrate the transient response. The observed full‐width at half maximum response time of the SHG waveform is ∼1 ps, which is consistent with the value obtained from an electronic cross‐correlation measurement. © 1996 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
85.30.De Semiconductor-device characterization, design, and modeling

Excited states of individual quantum dots studied by photoluminescence spectroscopy

D. Hessman, P. Castrillo, M.‐E. Pistol, C. Pryor, and L. Samuelson

Appl. Phys. Lett. 69, 749 (1996); http://dx.doi.org/10.1063/1.117879 (3 pages) | Cited 73 times

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The photoluminescence from individual InP quantum dots embedded in a matrix of GaInP has been studied. In addition to the ground state emission that consists of several peaks, we observe excited states of the dot. These states are observed either via state filling or with photoluminescence excitation spectroscopy. We observe a fast relaxation to the set of states with lowest energy but no relaxation between these states. © 1996 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors

Pressure and power dependence of self‐bias, sheath thickness, and deposition rate in confined methane plasmas at 13.56 MHz

R. Hytry and D. Boutard‐Gabillet

Appl. Phys. Lett. 69, 752 (1996); http://dx.doi.org/10.1063/1.117880 (3 pages) | Cited 5 times

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A capacitively coupled asymmetric rf discharge has been confined by means of a grounded metal grid above the powered electrode. The dc self‐bias, optical sheath thicknesses and deposition rates in methane plasmas have been measured versus gas pressure, absorbed rf power, and gas flow rate. While the self‐bias increases as a power law of the absorbed power for a given pressure, the evolution with pressure shows two domains for a given absorbed power. This may be attributed to the variation of the plasma potential due to the small, confined configuration. Otherwise the pressure variation of the deposition rates was also found to depend on the gas flow in the present conditions. © 1996 American Institute of Physics.
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52.40.Hf Plasma-material interactions; boundary layer effects
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Molecular Rydberg states in hydrogen negative ion discharges

J. R. Hiskes

Appl. Phys. Lett. 69, 755 (1996); http://dx.doi.org/10.1063/1.117881 (3 pages) | Cited 26 times

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The presence of Rydberg states in a negative‐ion discharge that are generated by electron collisional excitation will increase the concentration of negative ions on the order of 1% or less, compared to the concentration generated via dissociative attachment to ground‐state vibrationally excited molecules. © 1996 American Institute of Physics.
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52.50.Gj Plasma heating by particle beams
52.20.-j Elementary processes in plasmas
52.80.Pi High-frequency and RF discharges
34.50.-s Scattering of atoms and molecules

Computer‐assisted optical emission tomography in a radiofrequency capacitively coupled plasma

T. Kitajima, M. Izawa, R. Hashido, N. Nakano, and T. Makabe

Appl. Phys. Lett. 69, 758 (1996); http://dx.doi.org/10.1063/1.117882 (3 pages) | Cited 10 times

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Temporal characteristics of two‐dimensional (2D) spatial images of a net production rate in a capacitively coupled plasma (CCP) reactor driven at high frequency (13.56 MHz) are investigated by newly developed computer‐assisted optical emission tomography. Typical examples are presented for the absolute net formation rate of Ar(3p5) in Ar for 2 Torr and 13.56 MHz. The tomographic imaging enables us to understand a complex radial discharge structure in a CCP reactor, as well as in the central axial region. © 1996 American Institute of Physics.
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52.50.Gj Plasma heating by particle beams
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Determination of the composition of strained tetragonal epilayers

P. Fons, D. J. Bottomley, D. J. Tweet, S. Niki, and A. Yamada

Appl. Phys. Lett. 69, 761 (1996); http://dx.doi.org/10.1063/1.117883 (3 pages) | Cited 1 time

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Elasticity theory is applied to calculate the total strain present in a tetragonal symmetry epilayer due to heteroepitaxial misfit. By relating pseudobinary alloy composition to the lattice constants of the epilayer, it is shown that the composition of a pseudobinary epilayer can be determined from measurement of the strained epilayer lattice constants. This is accomplished by expressing the misfit strain in terms of the composition and the individual lattice constants of the components of the epilayer and using Vegard’s rule. As a result, determination of the composition of two chalcopyrite symmetry epilayers from x‐ray diffraction measurements is demonstrated. The approach presented here is general and can be applied to any substrate‐epilayer combination in the elastic limit. © 1996 American Institute of Physics.
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68.55.Nq Composition and phase identification
68.60.Bs Mechanical and acoustical properties
61.05.C- X-ray diffraction and scattering

Characterization of carbon nitride thin films prepared by dual ion beam sputtering

A. Fernández, P. Prieto, C. Quirós, J. M. Sanz, J.‐M. Martin, and B. Vacher

Appl. Phys. Lett. 69, 764 (1996); http://dx.doi.org/10.1063/1.117884 (3 pages) | Cited 19 times

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Carbon nitride thin films obtained by dual ion beam sputtering have been investigated by electron energy‐loss spectroscopy (EELS), transmission electron microscopy, and Fourier transform infrared spectroscopy. The nitrogen content in the films depends on deposition conditions. A maximum value of N/C=0.8 has been achieved. A new peak at 286.7 eV energy loss in the C K‐edge EELS spectra has been assigned to C=N bonds with C in the sp2 hybridization state. In addition, experimental evidences are presented of the formation of β‐C3N4 crystallites embedded in a layer of a polymer like CNx amorphous phase. An evaluation of the experimental parameters that lead to the highest N content in the films is also included. © 1996 American Institute of Physics.
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68.55.Nq Composition and phase identification
81.15.Cd Deposition by sputtering
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Enhancement of the third‐order nonlinear optical susceptibility in epitaxial vanadyl‐phthalocyanine films grown on KBr

Shaoli Fang, Hirokazu Tada, and Shinro Mashiko

Appl. Phys. Lett. 69, 767 (1996); http://dx.doi.org/10.1063/1.117885 (3 pages) | Cited 30 times

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We determined the magnitude of the third‐order nonlinear optical susceptibilities χ(3)(−3ω; ω, ω, ω) of vanadyl‐phthalocyanine (VOPc) films grown on KBr and fused silica substrates, using the third harmonic generation method at a wavelength of 1200 nm. The χ(3) value of the film grown epitaxially on KBr was 2.87×10−10 esu, which was greater by a factor of about 7.7 than that of a polycrystalline film grown on fused silica. The enhancement of χ(3) in the epitaxial phase is associated with the optimized orientation of the two‐dimensional π‐electron system in the condensed phase. © 1996 American Institute of Physics.
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78.66.Qn Polymers; organic compounds
42.65.An Optical susceptibility, hyperpolarizability
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques

F. A. Ponce, D. Cherns, W. T. Young, and J. W. Steeds

Appl. Phys. Lett. 69, 770 (1996); http://dx.doi.org/10.1063/1.117886 (3 pages) | Cited 93 times

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A combination of transmission electron microscopy imaging and diffraction techniques is used to characterize crystal defects in homoepitaxial GaN thin films. The Burgers vectors of dislocations is established by combining large‐angle convergent beam electron diffraction and conventional diffraction contrast techniques. It is shown that dislocations with Burgers vectors c, a, and c+a are present. Evidence is presented that dislocation segments lying in the interfacial plane are dissociated on a fine scale. The significance of the observations for understanding homoepitaxial growth of GaN is discussed. © 1996 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
61.05.jm Convergent-beam electron diffraction, selected-area electron diffraction, nanodiffraction

SiCN alloys deposited by electron cyclotron resonance plasma chemical vapor deposition

F. J. Gómez, P. Prieto, E. Elizalde, and J. Piqueras

Appl. Phys. Lett. 69, 773 (1996); http://dx.doi.org/10.1063/1.117887 (3 pages) | Cited 53 times

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Silicon–carbon–nitrogen alloys have been deposited by electron cyclotron resonance plasma chemical vapor deposition. Nitrogen, methane, and argon diluted silane have been used as precursor gases. The properties of the deposited films were studied by spectroscopic ellipsometry, Fourier transform infrared spectroscopy, X‐ray photoelectron, and Auger electron spectroscopy. The structure and bond formation in the SiCN films is discussed in terms of the present results. © 1996 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.66.Dk Alloys

Inhibitions of three dimensional island formation in InAs films grown on GaAs (111)A surface by molecular beam epitaxy

H. Yamaguchi, M. R. Fahy, and B. A. Joyce

Appl. Phys. Lett. 69, 776 (1996); http://dx.doi.org/10.1063/1.117888 (3 pages) | Cited 51 times

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A comparison has been made of the surface morphology of thin InAs films grown on GaAs (001) and (111)A substrates by molecular beam epitaxy using in situ reflection high energy electron diffraction and ex situ atomic force microscopy. InAs growth on (001) surface proceeds via the Stranski‐Krastanov mechanism, with three‐dimensional island formation beginning between one and two monolayers, but on the (111)A surface there is a two‐dimensional mode, independent of detailed growth conditions. This advantage accruing from the use of a novel index substrate provides the opportunity of fabricating a wide range of high quality heterostructures. © 1996 American Institute of Physics.
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61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Surface morphology of laser deposited diamondlike films by atomic force microscopy imaging

Hwantae Park, Young‐Kyu Hong, Jin Seung Kim, Chan Park, and Jae Ki Kim

Appl. Phys. Lett. 69, 779 (1996); http://dx.doi.org/10.1063/1.117889 (3 pages) | Cited 8 times

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The surface morphologies of diamondlike carbon (DLC) films with atomic force microscopy (AFM) are reported. The films were prepared by laser ablation with tuning power densities range from 3×108 to 1×1010 W/cm2. For power densities above 2×109 W/cm2, the films reveal smooth surfaces with uniform shapes of nanometer sized carbon clusters (sp3 bonding) and retain the surface roughness of the silicon substrate. For power densities below that, graphitic films are formed, and the surface roughness increases with decreasing laser intensity. The present AFM studies confirm that there exists a clear correlation between surface morphologies and the degree of diamondlike qualities. © 1996 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
81.15.Fg Pulsed laser ablation deposition

In‐plane optical anisotropy of GaAs/AlAs multiple quantum wells probed by microscopic reflectance difference spectroscopy

B. Koopmans, B. Richards, P. Santos, K. Eberl, and M. Cardona

Appl. Phys. Lett. 69, 782 (1996); http://dx.doi.org/10.1063/1.117890 (3 pages) | Cited 14 times

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We present a technique, microscopic reflectance difference spectroscopy (μRDS), for the measurement of optical anisotropy with sub‐micron resolution. The technique is applied to the determination of the in‐plane anisotropy of GaAs/AlAs multiple quantum well structures in a phase resolved way, both below and above the fundamental gap. Confinement and local field effects are discussed, and a comparison is made with microscopic calculations based on a tight‐binding Hamiltonian for the electronic states. © 1996 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.20.Fm Birefringence
78.40.Fy Semiconductors

Investigation of the temperature dependence of the field emission current of polycrystalline diamond films

J. W. Glesener and A. A. Morrish

Appl. Phys. Lett. 69, 785 (1996); http://dx.doi.org/10.1063/1.117891 (3 pages) | Cited 32 times

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This letter reports on the measurement of the field emission current dependence of doped polycrystalline diamond (PCD) films on temperature. The motivation for this type of measurement was to assess the thermal stability of PCD field emitters and gain some insight into a possible emission mechanism. Between room temperature and 300 °C, for a fixed electric field, the emission current from B doped films was found to remain constant. Heavily doped nitrogen films were also examined and the emission current was found to increase exponentially with an activation energy of 0.16 eV. © 1996 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
85.45.Db Field emitters and arrays, cold electron emitters

Exciton region reflectance of homoepitaxial GaN layers

K. P. Korona, A. Wysmołek, K. Pakuła, R. Stępniewski, J. M. Baranowski, I. Grzegory, B. Łucznik, M. Wróblewski, and S. Porowski

Appl. Phys. Lett. 69, 788 (1996); http://dx.doi.org/10.1063/1.117892 (3 pages) | Cited 71 times

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Reflection measurements in the exciton region of GaN homoepitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) on GaN single crystals are reported. At low temperature (4.2 K) three free exciton lines have been found with energies; EA=3.4776 eV, EB=3.4827 eV, and EC=3.502 eV. The spin‐orbit parameter Δso=19.7±1.5 meV and the crystal field parameter Δcr=9.3±0.3 meV have been obtained. From temperature dependence of exciton spectra the energy gap dependence has been found: E(T)=E(0)−λ/[exp(β/T)−1] (λ=0.121 eV, β=316 K). © 1996 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Novel surface emitting laser diode using photonic band‐gap crystal cavity

Hideki Hirayama, Tetsuko Hamano, and Yoshinobu Aoyagi

Appl. Phys. Lett. 69, 791 (1996); http://dx.doi.org/10.1063/1.117893 (3 pages) | Cited 24 times

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A novel surface emitting laser diode consisting of a three‐dimensional (3D) photonic band‐gap crystal cavity is proposed. Spontaneous emission is controlled so as to radiate in the lasing direction with a narrow radiation angle by introducing a plane phase shift region into the cavity. The radiation pattern of the localized phase shift mode in the photonic band gap is analyzed with a plane‐wave method by using a two‐dimensional (2D) model. We show that the radiation angle of spontaneous emission in the photonic crystal cavity is as narrow as that of the stimulated emission of conventional surface emitting laser. Therefore, the photonic band‐gap crystal cavity laser operates as a light source without threshold and spatial‐emission‐noise, and therefore is very attractive for use as the light source in spatially integrated optical circuits. © 1996 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers
42.70.Qs Photonic bandgap materials
85.60.Jb Light-emitting devices
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