APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

5 Aug 1996

Volume 69, Issue 6, pp. 719-862

Page 2 of 2 Pages Previous Page | Jump to Page

High transconductance heterostructure field‐effect transistors based on AlGaN/GaN

Q. Chen, M. Asif  Khan, J. W. Yang, C. J. Sun, M. S. Shur, and H. Park

Appl. Phys. Lett. 69, 794 (1996); http://dx.doi.org/10.1063/1.117894 (3 pages) | Cited 47 times

Full Text: | Download PDF

Show Abstract
We report on the fabrication and characterization of Al0.15Ga0.85N/GaN heterostructure field‐effect transistors (HFETs) with transconductance as high as 120 mS/mm and saturated current density of 0.35 A/mm for a device with a gate length and width of 1 and 100 μm. This represents one of the best results for such device. A comparison of the maximum transconductance of devices on wafers with different channel conductance is presented to analyze the factors limiting the performance. Our data indicates the series resistance between the source and drain to be the limiting factor for the maximum dc transconductance. © 1996 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
73.61.Ey III-V semiconductors

Coulomb scattering in strained‐silicon inversion layers on Si1−xGex substrates

F. Gámiz, J. B. Roldán, J. A. López‐Villanueva, and P. Cartujo

Appl. Phys. Lett. 69, 797 (1996); http://dx.doi.org/10.1063/1.117895 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
Results of electron mobility in strained‐Si inversion layers grown on Si1−xGex substrates are reported. Drift velocities are calculated by Monte Carlo simulations including electron quantization and Coulomb scattering, in addition to phonon and surface roughness scattering. The strain is shown to contribute as well to the enhancement of the Coulomb‐limited mobility due to better screening of the interface centers by the mobile carriers. Even in the case of high‐doped substrates, Coulomb scattering does not cancel the mobility enhancement provided by the reduction of both intervalley scattering and conduction effective mass. © 1996 American Institute of Physics.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Bk General theory, scattering mechanisms
72.80.Cw Elemental semiconductors

(110) oriented GaAs/Al0.3Ga0.7As quantum wells for optimized T‐shaped quantum wires

H. Gislason, C. B. Sørensen, and J. M. Hvam

Appl. Phys. Lett. 69, 800 (1996); http://dx.doi.org/10.1063/1.117896 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
High control of (110) oriented GaAs/Al0.3Ga0.7As quantum wells is very important for the growth of optimized T‐shaped GaAs/AlGaAs quantum wires. We investigate theoretically and experimentally 20–200 Å wide (110) oriented GaAs quantum wells grown on (110) oriented substrates and cleaved edges. Photoluminescence transition energies are found to be in good agreement with theory for all well widths. The mean well width is controllable to 1 monolayer accuracy and an effective well width fluctuation of 3.7 Å is derived from the photoluminescence linewidths. The growth rate calibration of the aluminum content of the barrier material agrees within 1% with an estimate from the bound exciton emission of (110) Al0.3Ga0.7As epilayers. © 1996 American Institute of Physics.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors

Wafer bonding of 50‐mm diameter GaP to AlGaInP‐GaP light‐emitting diode wafers

G. E. Höfler, D. A. Vanderwater, D. C. DeFevere, F. A. Kish, M. D. Camras, F. M. Steranka, and I.‐H. Tan

Appl. Phys. Lett. 69, 803 (1996); http://dx.doi.org/10.1063/1.117897 (3 pages) | Cited 33 times

Full Text: | Download PDF

Show Abstract
The feasibility of wafer bonding 50‐nm diameter wafers consisting of GaP‐AlGaInP light‐emitting diode epitaxial films to GaP substrates is demonstrated. Wafer bonding over the entire wafer area is achieved while maintaining optical transparency and low‐resistance electrical conduction at the wafer‐bonded interface. Using this technique, visible‐spectrum transparent‐substrate GaP‐AlGaInP/GaP light emitting diodes (LEDs) are fabricated across an entire 50‐mm wafer with typical operating voltages <2.1 V at 20 mA and twice the flux of absorbing‐substrate GaP‐AlGaInP/GaAs LEDs. This large‐area wafer‐bonding method is further shown to be capable of producing very high efficiency emitters, with an external quantum efficiency of 23.7% (300 K, 20 mA, dc) at 635.6 nm. © 1996 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
42.82.Cr Fabrication techniques; lithography, pattern transfer

Light‐induced electroluminescence of porous silicon layers on p‐Si in persulfate solution

L. M. Peter and R. I. Wielgosz

Appl. Phys. Lett. 69, 806 (1996); http://dx.doi.org/10.1063/1.117898 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Electroluminescence has been observed using the photostimulated reduction of persulfate ions at porous silicon layers grown on p−‐Si substrates. Electrons were generated in the substrate by illumination from the ohmic contact side. The detection of visible electroluminescence shows that photogenerated electrons accumulate in the porous layer when the p− substrate is reverse biased. Voltage tuning of the electroluminescence spectrum was observed, but the tuning saturated when the reduction of persulfate became light limited. The tuning is attributed to the switching on of electroluminescence as electrons progressively populated particles of decreasing size, followed by switching off by Auger quenching when a second electron is captured before radiative decay occurs. © 1996 American Institute of Physics.
Show PACS
78.60.Fi Electroluminescence
78.66.Db Elemental semiconductors and insulators

Optical detection of quantum oscillations in InP/InGaAs quantum structures

I. A. Buyanova, W. M. Chen, A. V. Buyanov, W. G. Bi, and C. W. Tu

Appl. Phys. Lett. 69, 809 (1996); http://dx.doi.org/10.1063/1.117899 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
A magnetooptical method based on optical detection of quantum oscillations via photoluminescence in a magnetic field is applied for characterization of the electronic structure and recom‐ bination mechanisms in modulation‐doped semiconductor quantum structures. By studying modulation‐doped InP/InGaAs two‐dimensional (2D) quantum structures as an example case, the method is shown to be capable of obtaining information on: (i) the electronic structure, filling of quantum subbands, as well as the effective mass of 2D carriers and band nonparabolicity; (ii) both equilibrium and nonequilibrium concentration of 2D carriers and the dependence of the carrier concentration and lifetime on injection level. © 1996 American Institute of Physics.
Show PACS
78.20.Ls Magneto-optical effects
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Experimental characterization and modeling of a ferroelectric bulk channel field effect transistor with nonvolatile memory characteristics

F. Y. Chen, Y. K. Fang, M. J. Sun, and Jiann‐Ruey Chen

Appl. Phys. Lett. 69, 812 (1996); http://dx.doi.org/10.1063/1.117900 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
A ferroelectric bulk channel field effect transistor has been developed using a thin film of lead titanate (PbTiO3) deposited on a n/p+ Si substrate by rf sputtering, in which the drain conductance changes in proportion to the remanent polarization of PbTiO3 thin film induced by the gate pulse voltage. Since the remanent polarization will stay a long time after the gate voltage is removed, the device possesses the memory characteristics. The device is a bulk channel structure and different from the reported surface channel type ferroelectric field effect transistor. Therefore, it possesses higher mobility. In this letter, current–voltage curves have been shown to compare with the theoretical analysis. The fit is quite good. © 1996 American Institute of Physics.
Show PACS
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates

Seong‐Il Kim, Moo‐Sung Kim, Yong Kim, Chang Sik Son, Seong‐Min Hwang, Byung‐Don Min, Eun Kyu Kim, and Suk‐Ki Min

Appl. Phys. Lett. 69, 815 (1996); http://dx.doi.org/10.1063/1.117901 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Lateral growth rate of GaAs is remarkably increased with supplying CBr4, which has been utilized as a p‐type dopant source for carbon doped GaAs epilayers during metalorganic chemical vapor deposition growth. The lateral growth rate can be represented as a linear function of the CBr4 flow rate, while the GaAs vertical growth rate is relatively insensitive to the CBr4 flow rate. The maximum ratio of the lateral to vertical growth rate by CBr4 is about 29. With increasing the growth temperature, the lateral growth rate increases, but it decreases at a more elevated growth temperature than 700 °C. These results are also compared to the previous results obtained by CCl4. In all cases the lateral growth rate increments by CBr4 are larger than those by CCl4. © 1996 American Institute of Physics.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Monolithic waveguide smart pixels for high‐contrast and high‐gain all‐optical switching

U. Hilburger, M. Kneissl, P. Kiesel, B. Knüpfer, G. H. Döhler, and H. Grothe

Appl. Phys. Lett. 69, 818 (1996); http://dx.doi.org/10.1063/1.117902 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
We demonstrate a novel and simple smart pixel which combines free space optics for the input signal and waveguide configuration for the output beam. Our monolithic smart pixels consist of a threshold switch with high photoconductive gain and a Franz–Keldysh waveguide modulator. The switch provides sufficiently high current to control directly the output beam via the modulator. A high switching contrast of ≳17 dB and a fan‐out ≳230 at an optical output power of ≳130 μW has been achieved with our first monolithic smart pixels, which are still far from being optimized. © 1996 American Institute of Physics.
Show PACS
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Hp Optical processors, correlators, and modulators
85.60.Bt Optoelectronic device characterization, design, and modeling

Photothermal radiometric investigation of implanted silicon: The influence of dose and thermal annealing

Andreas Othonos, Constantinos Christofides, and Andreas Mandelis

Appl. Phys. Lett. 69, 821 (1996); http://dx.doi.org/10.1063/1.117903 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
Photothermal radiometric measurements were performed on phosphorus implanted and annealed silicon wafers. Data were collected over modulation frequencies ranging between 0.1 and 100 kHz with the 488 nm Ar ion laser line as the excitation source. The sensitivity of this technique on implantation dose and annealing temperature is discussed. A semiquantitative analysis of the data is also carried out.
Show PACS
61.72.S- Impurities in crystals
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
81.70.Fy Nondestructive testing: optical methods
07.60.Dq Photometers, radiometers, and colorimeters

Local structural modification in ion damaged InGaAs

Kin Man Yu and Leonardo Hsu

Appl. Phys. Lett. 69, 824 (1996); http://dx.doi.org/10.1063/1.117904 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
The indium nearest‐neighbor environment in InGaAs thin films damaged by Ar ion implantation has been studied by extended x‐ray absorption fine structure spectroscopy. We find that before the material turns amorphous by Ar irradiation, the In–As nearest‐neighbor distance remains close to its crystalline value even when the layer is heavily damaged but not entirely amorphous. Once the Ar dose exceeds the threshold for amorphizing the InGaAs layer, the In–As bond distance relaxes to that of pure crystalline InAs. This sudden change in local structure as the material transforms from crystalline to amorphous suggests that the transition is due to simultaneous amorphous nucleation rather than the accumulation and overlapping of isolated amorphous regions. Moreover, this change in the local structure in a ternary alloy can be used as a criterion for determining the crystalline‐to‐amorphous transition of the alloy. © 1996 American Institute of Physics.
Show PACS
61.72.uj III-V and II-VI semiconductors
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Spatially and spectrally resolved imaging of GaAs quantum‐dot structures using near‐field optical technique

Yasunori Toda, Motonobu Kourogi, Motoichi Ohtsu, Yasushi Nagamune, and Yasuhiko Arakawa

Appl. Phys. Lett. 69, 827 (1996); http://dx.doi.org/10.1063/1.117905 (3 pages) | Cited 21 times

Full Text: | Download PDF

Show Abstract
We present experimental result on spatially and spectrally resolved imaging of GaAs quantum dot (QD) structures using a near‐field optical microscope. Three photoluminescence (PL) peaks which originate from QD, quantum well (QW), and bulk regions were observed at liquid‐He temperature. Carriers were observed to diffuse effectively from the AlGaAs barriers to the QD and QW regions. The region of the intension carrier capture manifests itself by emitting a sharp PL peak, and is estimated to be about 300 nm. © 1996 American Institute of Physics.
Show PACS
07.79.Fc Near-field scanning optical microscopes
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Cr III-V semiconductors

Optical degradation of InGaN/AlGaN light‐emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition

T. Egawa, H. Ishikawa, T. Jimbo, and M. Umeno

Appl. Phys. Lett. 69, 830 (1996); http://dx.doi.org/10.1063/1.117906 (3 pages) | Cited 25 times

Full Text: | Download PDF

Show Abstract
We report an optical degradation of an InGaN/AlGaN double‐heterostructure light‐emitting diode (LED) on a sapphire substrate grown by metalorgonic chemical vapor deposition. Electroluminescence, electron‐beam induced current, and cathodoluminescence observations have shown that the degraded InGaN/AlGaN LED exhibits formation and propagation of dark spots and a crescent‐shaped dark patch, which act as nonradiative recombination centers. The values of degradation rate under injected current density of 0.1 kA/cm2 were determined to be 1.1×10−3, 1.9×10−3, and 3.9×10−3h−1 at ambient temperatures of 30, 50, and 80°C, respectively. The activation energy of degradation was also determined to be 0.23 eV. © 1996 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
78.66.Fd III-V semiconductors
78.60.Fi Electroluminescence

Instabilities in electroluminescent porous silicon diodes

J. Linnros, N. Lalic, P. Knápek, K. Luterová, J. Kočka, A. Fejfar, and I. Pelant

Appl. Phys. Lett. 69, 833 (1996); http://dx.doi.org/10.1063/1.117907 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
The stability of high quantum efficiency, porous silicon (PS) electroluminescent (EL) diodes have been analyzed under pulsed operation. The results show that EL exhausting is due to a charging of the PS network which recovery is thermally activated (Er∼0.4 eV). This suggests a charge trapping mechanism at larger crystallites with low bandgap, inhibiting further injection of carriers. Also, forward current is found to be thermally activated, however, with a distinctly lower activation energy (Ej∼0.1–0.2 eV), possibly related to jumping of carriers over barriers between nearby crystallites. Finally, high current densities may lead to thermal runaway causing permanent damage to the structure. © 1996 American Institute of Physics.
Show PACS
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
73.61.Cw Elemental semiconductors

Optical transitions in cubic GaN investigated by spatially resolved cathodoluminescence

J. Menniger, U. Jahn, O. Brandt, H. Yang, and K. Ploog

Appl. Phys. Lett. 69, 836 (1996); http://dx.doi.org/10.1063/1.117908 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
Spatially resolved cathodoluminescence (CL) spectroscopy in connection with scanning electron microscopy performed on cubic (c) GaN between 5 and 300 K reveals that at low temperatures the CL spectra of c‐GaN single crystals consist of four well‐separated lines. The two lines highest in energy were previously identified as excitonic and donor‐acceptor transitions, respectively. Here, we show that the lines lowest in energy are due to an additional free‐to‐bound transition, involving an impurity different from those related to the donor‐acceptor transition, and its phonon replica. The CL spectra of c‐GaN layers, while being rather broad, are composed of these four lines. Moreover, at 300 K the spectra of the layers and of the crystals are both dominated by the excitonic transition and closely resemble each other. © 1996 American Institute of Physics.
Show PACS
78.60.Hk Cathodoluminescence, ionoluminescence
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

Effect of extended defects on the formation and dissociation kinetics of Zn–H complexes in heteroepitaxial p‐type InP layers

B. Chatterjee and S. A. Ringel

Appl. Phys. Lett. 69, 839 (1996); http://dx.doi.org/10.1063/1.117909 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
Hydrogen passivation of Zn acceptors and Zn–H dissociation kinetics are compared for homoepitaxial and lattice‐mismatched heteroepitaxial n+p InP structures. Doping profile measurements show a pronounced increase in the depth and degree of passivation in the p‐type region of the heteroepitaxial samples indicating enhanced diffusion of hydrogen along dislocations, followed by additional Zn deactivation. Moreover, the strong affinity between hydrogen and extended defects is found to aid the subsequent dissociation of the Zn–H complexes as indicated by (i) reverse bias annealing (RBA) studies which show that the Zn–H dissociation energy decreases from 1.19 eV in homoepitaxial samples to 1.12 eV in heteroepitaxial samples, and (ii) enhanced passivation of extended defect‐related traps by hydrogen that is liberated from Zn acceptors during the RBA process as determined by deep level transient spectroscopy. © 1996 American Institute of Physics.
Show PACS
61.72.S- Impurities in crystals
61.72.Cc Kinetics of defect formation and annealing
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

An optical correlator using a low‐temperature‐grown GaAs photoconductor

S. Verghese, N. Zamdmer, Qing Hu, E. R. Brown, and A. Förster

Appl. Phys. Lett. 69, 842 (1996); http://dx.doi.org/10.1063/1.117910 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
A sampling correlator is described which is useful for characterizing optical pulses with subpicosecond resolution. The correlator exploits the ultrafast nonlinear response of a photoconductor made of low‐temperature‐grown (LTG) gallium arsenide, which is connected to a coplanar‐waveguide line. Instead of using a nonlinear crystal, the LTG‐GaAs correlator uses a nonlinearity associated with the transmission line and photoconductor functioning as a voltage divider. The resulting nonlinearity is used to measure the intensity autocorrelation function. © 1996 American Institute of Physics.
Show PACS
42.79.Hp Optical processors, correlators, and modulators
72.40.+w Photoconduction and photovoltaic effects

Surface morphology and growth mechanism of YBa2Cu3O7−y films by metalorganic chemical vapor deposition using liquid sources

Y. Yoshida, Y. Ito, I. Hirabayashi, H. Nagai, and Y. Takai

Appl. Phys. Lett. 69, 845 (1996); http://dx.doi.org/10.1063/1.117911 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
We have investigated surface morphology of YBa2Cu3O7−y thin films prepared by chemical vapor deposition (CVD) using liquid metalorganic (MO) sources on MgO(100) single crystalline substrates by atomic force microscopy (AFM). An abrupt change in the terrace width was observed at the deposition temperature of around 750 °C. An anomalous decrease in the efficiency of incorporation of the yttrium component into the film was also found above the same temperature. It suggests that the appearance of liquid phase on the growing surface and the growth mode change from the conventional vapor growth to the VLS (vapor–liquid–solid) growth mode at this temperature. © 1996 American Institute of Physics.
Show PACS
74.72.-h Cuprate superconductors
74.78.-w Superconducting films and low-dimensional structures
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Ramp‐type junction parameter control by Ga doping of PrBa2Cu3O7−δ barriers

M. A. J. Verhoeven, G. J. Gerritsma, H. Rogalla, and A. A. Golubov

Appl. Phys. Lett. 69, 848 (1996); http://dx.doi.org/10.1063/1.117912 (3 pages) | Cited 48 times

Full Text: | Download PDF

Show Abstract
We analyzed the transport of charge carriers across PrBa2Cu3−xGaxO7−δ (PBCGO) barriers as a function of barrier thickness, Ga‐doping level, temperature, and bias voltage. It was found that by Ga doping, the normal state resistance (Rn) of the junctions was systematically increased, while the critical current (Ic) remained constant. We argue that pair transport takes place by direct tunneling, whereas the quasiparticles have access to channels formed by one or more localized states inside the barrier. By Ga doping the IcRn products were increased, up to 8 mV at 4.2 K for junctions with 8 nm thick PrBa2Cu2.6Ga0.4O7−δ barriers. © 1996 American Institute of Physics.
Show PACS
74.78.Fk Multilayers, superlattices, heterostructures
74.25.F- Transport properties

1/f electrical noise in epitaxial thin films of the manganite oxides La0.67Ca0.33MnO3 and Pr0.67Sr0.33MnO3

M. Rajeswari, A. Goyal, A. K. Raychaudhuri, M. C. Robson, G. C. Xiong, C. Kwon, R. Ramesh, R. L. Greene, T. Venkatesan, and S. Lakeou

Appl. Phys. Lett. 69, 851 (1996); http://dx.doi.org/10.1063/1.117913 (3 pages) | Cited 32 times

Full Text: | Download PDF


See Also: Erratum

Show Abstract
We report measurements of 1/f electrical noise in two hole doped manganite perovskite oxides, La0.67Ca0.33MnO3 and Pr0.67Sr0.33MnO3, which exhibit colossal magnetoresistance. The noise magnitude represented by the Hooge parameter is nearly 8 orders of magnitude larger than that observed in ordinary metals (and semiconductors) and nearly 5–6 orders of magnitude larger than that observed in epitaxial films of the perovskite oxide YBa2Cu3O7 in the normal state. The normalized noise spectral density increases with decreasing temperature below the resistivity peak, suggestive of the presence of additional low energy noise processes in the ferromagnetic metallic state. © 1996 American Institute of Physics.
Show PACS
73.50.Td Noise processes and phenomena
73.61.Ng Insulators
75.47.De Giant magnetoresistance

Study of ultrathin Y3Fe5O12/Gd3Ga5O12 superlattices

M. Y. Chern, C. C. Fang, J. S. Liaw, J. G. Lin, and C. Y. Huang

Appl. Phys. Lett. 69, 854 (1996); http://dx.doi.org/10.1063/1.117914 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
High quality Y3Fe5O12/Gd3Ga5O12 (YIG/GGG) superlattices have been grown on (111)GGG substrates by pulsed laser deposition. The superlattices are investigated with the thickness of the YIG layer varied from six to one unit cells while keeping the GGG layer fixed at one unit cell. The thicknesses of the YIG and GGG layers are confirmed with grazing angle x‐ray reflectivity (GAXR). The good quality of the samples is indicated by the small interface roughness, no more than 6 Å, also measured with GAXR. While the magnetization of the samples decreases when the thickness of the YIG layer is decreased, the superlattice remains magnetic even when the YIG layer is only one unit cell. Ferrimagnetic resonance indicates that there exists a surface anisotropy favoring in‐plane magnetization. © 1996 American Institute of Physics.
Show PACS
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

In‐plane periodic bicrystallinity in magnetic thin films

M. Sussiau, F. Nguyen‐Van‐Dau, P. Galtier, and A. Schuhl

Appl. Phys. Lett. 69, 857 (1996); http://dx.doi.org/10.1063/1.117915 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
Magnetic thin films have been deposited by molecular beam epitaxy on vicinal Si(111) substrates misoriented towards [11‐2]. The substrates were thermally pretreated in order to activate the step bunching mechanism, which results in a laterally modulated surface topology with a period of ∼800 Å. Cobalt or permalloy layers grown on such surfaces exhibit an in‐plane uniaxial magnetic anisotropy. This anisotropy is associated with the lateral pseudoperiodic variation of the crystalline orientation of the metallic layers as observed by transmission electron microscopy. Magnetoresistance measurements on microstructured films reveal a single‐domain behavior with a magnetization reversal by rotation. © 1996 American Institute of Physics.
Show PACS
75.70.Ak Magnetic properties of monolayers and thin films
75.30.Gw Magnetic anisotropy
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Low temperature deposition of patterned TiO2 thin films using photopatterned self‐assembled monolayers

Rochael J. Collins, Hyunjung Shin, Mark R. DeGuire, Arthur H. Heuer, and Chaim N. Sukenik

Appl. Phys. Lett. 69, 860 (1996); http://dx.doi.org/10.1063/1.117916 (3 pages) | Cited 41 times

Full Text: | Download PDF

Show Abstract
Patterned thin films of TiO2 were deposited from aqueous solution onto photopatterned self‐assembled monolayer (SAM) films on Si substrates. Regions of the SAM containing sulfonate surface functionality were created by the photo‐oxidation of initially deposited thioacetate groups through a mask. The nanocrystalline TiO2‐on‐SAM films were deposited selectively on the photolyzed regions of the SAM. The electrical properties of such films were assessed for potential microelectronic device applications. Current–voltage and capacitance–voltage measurements made on nonpatterned TiO2 films yielded values of relative permittivity ranging from 24 to 57, film resistivities of 1.0–1.5×109 Ω cm and breakdown voltages in excess of 1 MV/cm. © 1996 American Institute of Physics.
Show PACS
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
85.40.Sz Deposition technology
73.63.-b Electronic transport in nanoscale materials and structures
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
Page 2 of 2 Pages Previous Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close