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12 Aug 1996

Volume 69, Issue 7, pp. 869-1016

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Phase coupling of two optically pumped vertical‐cavity surface‐emitting lasers

R. F. M. Hendriks, M. P. van Exter, J. P. Woerdman, and C. J. van der Poel

Appl. Phys. Lett. 69, 869 (1996); http://dx.doi.org/10.1063/1.117971 (3 pages) | Cited 7 times

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We have studied the interaction between two optically pumped vertical‐cavity surface‐emitting lasers (VCSELs) on a wafer as a function of their separation d. The VCSELs are strongly coupled for d⩽13 μm, leading to the appearance of higher‐order lateral modes. For d⩾13 μm the VCSELs are weakly coupled, leading to phase locking of the individual emitters. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Application of an InSb flat crystal with elliptically shaped modulated structures to x‐ray point focusing

W. Z. Chang, I. Uschmann, E. Förster, and H. Rothuizen

Appl. Phys. Lett. 69, 872 (1996); http://dx.doi.org/10.1063/1.117972 (3 pages)

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Obtained experimental results demonstrate that x rays can be focused to a point by using one flat InSb crystal with elliptically shaped modulated structures based on the Bragg and Fresnel diffraction principles. Ti Kα radiation and InSb (111) reflections are used to focus a 20‐μm source size to a point of 9 μm, which is in good agreement with predictions from the wave‐optics approach. The quality of the modulated structure fabrication is judged by the shape of the focal spot, which indicates no visible aberration effects. © 1996 American Institute of Physics.
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07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
41.50.+h X-ray beams and x-ray optics

An optical heterodyne experiment for sensitive detection of laser induced photocarrier gratings in semiconductors

J. Strauss, M. Hundhausen, and L. Ley

Appl. Phys. Lett. 69, 875 (1996); http://dx.doi.org/10.1063/1.117973 (3 pages) | Cited 2 times

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We measure the diffraction of a cw probe laser beam from an absorption index grating set up in a thin film semiconductor by illumination with a moving optical interference fringe pattern. Taking advantage of the heterodyne detection principle whereby the weak diffracted laser beam is brought to interfere with the probe beam we are able to work with diffraction efficiencies as low as 10−14. When applied to amorphous hydrogenated silicon the diffraction efficiency depends in a characteristic way on an applied external electric field. We identify two physical mechanisms for the diffraction, namely a periodic temperature profile related to the absorption of the laser grating and the quadratic electro‐optical effect. © 1996 American Institute of Physics.
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42.25.Hz Interference
42.79.Dj Gratings
78.66.Jg Amorphous semiconductors; glasses

High‐temperature operation of an electroluminescent device fabricated using a novel triphenylamine derivative

Shizuo Tokito, Hiromitsu Tanaka, Akane Okada, and Yasunori Taga

Appl. Phys. Lett. 69, 878 (1996); http://dx.doi.org/10.1063/1.117974 (3 pages) | Cited 60 times

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We have fabricated thermally stable organic electroluminescent (EL) devices using a hole transporting material, a tetramer of triphenylamine, and a typical emitting material, tris (8‐quinolinolato) aluminum (Alq). The organic EL devices show uniform light emission in a continuous operation up to 140 °C without breakdown. A lowering of turn‐on voltage for light emission and an increase of luminous efficiency with increasing temperature are found; the significantly low turn‐on voltage of 2.1 V and the high luminous efficiency of 1.25 lm/W are obtained at 130 °C. Excellent durability of continuous operation is also achieved at the high temperature. © 1996 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence
42.79.Kr Display devices, liquid-crystal devices

Use of poly(phenyl quinoxaline) as an electron transport material in polymer light‐emitting diodes

D. O’Brien, M. S. Weaver, D. G. Lidzey, and D. D. C. Bradley

Appl. Phys. Lett. 69, 881 (1996); http://dx.doi.org/10.1063/1.117975 (3 pages) | Cited 86 times

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We report the use of a poly(phenyl quinoxaline) (PPQ) as an electron transporting conjugated polymer for electroluminescence (EL) applications. Single‐layer PPQ devices with ITO anode and aluminium cathode show unipolar electron transport with current densities up to 60 mA/cm2 but no emission. Two‐layer structures combining PPQ as electron transport material with the hole transporting poly(2,5‐dialkoxy‐p‐phenylene vinylene) (PDAOPV) show strong emission from the PDAOPV with brightnesses up to 250 cd/m2. These two‐layer structures have a maximum EL quantum efficiency of 0.35% which is ten‐fold enhanced compared with the corresponding single‐layer PDAOPV devices. © 1996 American Institute of Physics.
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85.60.Jb Light-emitting devices
73.61.Ph Polymers; organic compounds
78.66.Qn Polymers; organic compounds

Extreme ultraviolet line emission at 24.7 nm from Li‐like nitrogen plasma produced by a short KrF excimer laser pulse

N. S. Kim, A. Djaoui, M. H. Key, D. Neely, S. G. Preston, M. Zepf, C. G. Smith, J. S. Wark, J. Zhang, and A. A. Offenberger

Appl. Phys. Lett. 69, 884 (1996); http://dx.doi.org/10.1063/1.117976 (3 pages) | Cited 2 times

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Recently using KrF high power laser (248 nm; 350 fs; 5.0×1016 W/cm2) in the Rutherford Appleton Laboratory an experimental search for recombination extreme ultraviolet (XUV) laser action in Li‐like nitrogen ions was performed. To understand the experimental results of line emission at 24.7 nm in the 3d5/2–2p3/2 transition of the Li‐like nitrogen ion a simulation was undertaken using a one‐dimensional Lagrangian hydrodynamic code. From the simulation results, we confirmed that there was nonlinear dependence of spectral line emission on the gas density which was well matched to the experimental results. Only a six times increase of the 24.7 nm emission intensity was obtained when the plasma length was increased 1000 times from 1 μm as an optically thin case to 1 mm. Also, the spatial profile of the electron density and temperature was obtained and the electron temperature was about 40–50 eV which was too high for the optical field ionization x‐ray lasing. We could not find evidence of x‐ray laser gain. © 1996 American Institute of Physics.
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42.55.Vc X- and γ-ray lasers
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Magnetic field dependence of exciton oscillator strength by measurements of magnetoexciton‐polariton mode splitting in quantum wells with a microcavity

Takuji Tanaka, Zhenlong Zhang, Masao Nishioka, and Yasuhiko Arakawa

Appl. Phys. Lett. 69, 887 (1996); http://dx.doi.org/10.1063/1.117977 (3 pages) | Cited 15 times

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Exciton‐polariton mode splitting of quantum wells (QWs) in a microcavity is experimentally and theoretically investigated under a high magnetic field up to 14.5 T. The magnetic field dependence of the splitting interval has been measured for the precisely tuned photon and exciton mode. It is found that the splitting interval increases with an increase of the magnetic field, which shows enhancement of magnetoexciton‐photon interaction. Theoretical analysis using a transfer matrix method and a variational method demonstrates that these properties are mainly caused by the increase of exciton oscillator strength due to the magnetic field. The effect of the number of QWs on the mode splitting is also discussed. © 1996 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers
71.35.Ji Excitons in magnetic fields; magnetoexcitons
78.66.Fd III-V semiconductors

Copper nitride and tin nitride thin films for write‐once optical recording media

Toshiro Maruyama and Tomonori Morishita

Appl. Phys. Lett. 69, 890 (1996); http://dx.doi.org/10.1063/1.117978 (2 pages) | Cited 72 times

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The feasibility of using copper nitride and tin nitride thin films as write‐once optical recording media was explored. The Cu3N and SnNx films were obtained by the reactive sputtering method. They were thermally decomposed into Cu and Sn films at 470 and 550 °C, respectively. The Cu film obtained by the thermal decomposition showed a large difference in reflectance which is applicable to the optical recording media. The Sn film obtained by the thermal decomposition included SnO, and consequently it showed a small difference in reflectance from that of SnNx film. © 1996 American Institute of Physics.
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42.70.Ln Holographic recording materials; optical storage media
78.66.Li Other semiconductors
81.15.Cd Deposition by sputtering

Highly luminescent Eu3+ or Tb3+ doped and ZnO sensitized optical fibers drawn from silicon compatible sealing glasses

D. Rüter and W. Bauhofer

Appl. Phys. Lett. 69, 892 (1996); http://dx.doi.org/10.1063/1.117979 (3 pages) | Cited 12 times

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A strongly enhanced luminescence efficiency of zincborate glasses and glass fibers doped with trivalent europium or terbium is reported. The enhancement is attributed to a high content of direct gap ZnO nanocrystallites which operate as sensitizer for the rare‐earth ions. The glasses have a low softening point and are designed to be compatible with the silicon technology. Applications as scintillating devices integrated on silicon are suggested. © 1996 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
42.70.Ce Glasses, quartz
42.81.-i Fiber optics

Fabrication and characterization of sol‐gel planar waveguides doped with rare‐earth ions

X. Orignac, D. Barbier, X. M. Du, and R. M. Almeida

Appl. Phys. Lett. 69, 895 (1996); http://dx.doi.org/10.1063/1.117980 (3 pages) | Cited 37 times

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Silica‐titania sol‐gel planar waveguides were deposited on silica glass disks by spin coating. Fluorescence lifetimes as high as 375 μs were measured in neodymium‐doped sol‐gel planar waveguides and 1.78 ms for an erbium‐doped film. Quenching was found to occur for the former at concentrations above 1 at. % of neodymium. © 1996 American Institute of Physics.
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42.70.Hj Laser materials
42.82.Et Waveguides, couplers, and arrays
85.60.-q Optoelectronic devices

AlGaN/InGaN/GaN blue light emitting diode degradation under pulsed current stress

Marek Osiński, Joachim Zeller, Pei‐Chih Chiu, B. Scott Phillips, and Daniel L. Barton

Appl. Phys. Lett. 69, 898 (1996); http://dx.doi.org/10.1063/1.116936 (3 pages) | Cited 22 times

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This study focused on the performance of commercial AlGaN/InGaN/GaN blue light emitting diodes (LEDs) under high current pulse conditions. The results of deep level transient spectroscopy (DLTS), thermally stimulated capacitance, and admittance spectroscopy measurements performed on stressed devices, showed no evidence of any deep‐level defects that may have developed as a result of high current pulses. Physical analysis of stressed LEDs indicated a strong connection between the high intrinsic defect density in these devices and the resulting mode of degradation. © 1996 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Fd III-V semiconductors

Electro‐optical characterization of poled‐polymer films in transmission

P. M. Lundquist, M. Jurich, J.‐F. Wang, H. Zhou, T. J. Marks, and G. K. Wong

Appl. Phys. Lett. 69, 901 (1996); http://dx.doi.org/10.1063/1.116937 (3 pages) | Cited 14 times

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An improved version of the commonly employed C. C. Teng and H. I. Man (Appl. Phys. Lett. 56, 1734 [1990]) measurement technique is illustrated by the characterization of films of a new high glass transition temperature polyurea. Measurements taken in the transmission mode are shown to be free from non‐negligible errors introduced by interference effects present in standard reflection geometry measurements. © 1996 American Institute of Physics.
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42.70.Jk Polymers and organics
78.20.Jq Electro-optical effects
78.66.Qn Polymers; organic compounds

Ionic and neutral growth of dust in plasmas

P. Haaland, A. Garscadden, and B. Ganguly

Appl. Phys. Lett. 69, 904 (1996); http://dx.doi.org/10.1063/1.116938 (3 pages) | Cited 12 times

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See Also: Erratum

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Microscopic dust particles may be formed by accretion of neutral or positively charged precursors in laboratory plasmas. When the concentration of neutral precursors is large, as when a mixture of He and CO is discharged, the radius of grains increases linearly with time and ex situ electron microscopy shows polydisperse particle sizes. By contrast, when the particle acquires multiple negative charges to satisfy the floating potential and the grain size is less than the plasma’s linearized Debye length, ionic growth increases the radii of the particles as t1/3. Monodisperse particle size distributions consistent with ionic growth kinetics are observed in low pressure He plasmas excited by graphite electrodes.
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52.25.Vy Impurities in plasmas
52.20.Dq Particle orbits

The role of atomic size asperities in the mechanical deformation of nanocontacts

A. B. Mann and J. B. Pethica

Appl. Phys. Lett. 69, 907 (1996); http://dx.doi.org/10.1063/1.116939 (3 pages) | Cited 40 times

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The processes leading to permanent deformation when two bodies make contact are important in adhesion, wear, and tribology. We present nanoindentation results for GaAs showing that impact kinetic energies of only a few eV can lead to a dramatic reduction in the load required to cause permanent deformation when compared to the load required for impact energies of less than 1 eV. We explain this extreme sensitivity to the initial contact in terms of atomic size asperities which must be deformed if defects are to be generated on impact. Lower kinetic energies do not destroy the asperities, and dislocations must be nucleated later in the indentation cycle. © 1996 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
68.35.Gy Mechanical properties; surface strains
62.20.Qp Friction, tribology, and hardness

Depression of melting point of multidomained bismuth in aluminum based metallic glass nanocomposites

R. Goswami and K. Chattopadhyay

Appl. Phys. Lett. 69, 910 (1996); http://dx.doi.org/10.1063/1.116940 (3 pages) | Cited 12 times

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We report the synthesis of nanocomposites of Bi in an aluminum based metallic glass matrix by rapid solidification. It is shown that constrained melting and solidification of nanometer sized embedded Bi particles lead to the formation of symmetry related multidomained particles. The Bi particles exhibit a significantly large depression of bulk melting point (over 100 K) requiring a free energy gain of greater than 0.7×108 J m−3. This cannot be explained by the size dependence of melting points or other pressure effects and represents an intrinsic characteristic of the multidomained particles. © 1996 American Institute of Physics.
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81.30.Fb Solidification
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.05.Kf Glasses (including metallic glasses)
64.70.D- Solid-liquid transitions

Microscopic structure of gold particles in a metal polymer composite film

M. José‐Yacamán, R. Pérez, P. Santiago, M. Benaissa, K. Gonsalves, and G. Carlson

Appl. Phys. Lett. 69, 913 (1996); http://dx.doi.org/10.1063/1.116941 (3 pages) | Cited 6 times

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Gold particles embedded in a polymer are studied using high resolution electron microscopy, nanodiffraction, and image processing. These particles have interesting properties such as nonlinear optical susceptibility. It is found that most of the nanoparticles are single crystals, and twins and planar defects are scarcely observed. On the other hand, it is found that nanoparticles do not show smooth facets but they are instead very rough. The effects of this extended roughness in the optical properties are discussed. © 1996 American Institute of Physics.
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68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
61.05.jm Convergent-beam electron diffraction, selected-area electron diffraction, nanodiffraction
61.46.-w Structure of nanoscale materials
78.66.Vs Fine-particle systems

Localized epitaxial growth of hexagonal and cubic SiC films on Si by vacuum annealing

Jian‐Shing Luo and Wen‐Tai Lin

Appl. Phys. Lett. 69, 916 (1996); http://dx.doi.org/10.1063/1.116942 (3 pages) | Cited 6 times

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Localized epitaxial growth of hexagonal (6H) and cubic (3C) SiC films on Si by annealing the Si substrates at 700–850 °C in a vacuum of 1–2×10−6 Torr is presented. The orientation relationships of epitaxial SiC films grown on (111)Si and (100)Si were (0001)6H‐SiC//(111)Si and [1120]6H‐SiC//[011]Si, (111)3C‐SiC//(111)Si and [110]3C‐SiC//[110]Si, and (100)3C‐SiC//(100)Si and [011]3C‐SiC//[011]Si, respectively. The amount of 6H‐SiC epitaxy was less than that of 3C‐SiC epitaxy. For the films grown at 750–850 °C for 0.5 h, the area fraction of SiC epitaxy ranged from 60% to 80% and the film thickness ranged from 0.02 to 0.15 μm. The main carbon source for the growth of SiC on Si during vacuum annealing was the carbon‐containing residue present at the chamber walls. © 1996 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Np Solid phase epitaxy; growth from solid phases
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Thermally activated interface shift in the tungsten/silicon multilayers

M. Jergel, Z. Bochníček, E. Majková, R. Senderák, and Š. Luby

Appl. Phys. Lett. 69, 919 (1996); http://dx.doi.org/10.1063/1.116943 (3 pages) | Cited 4 times

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The in situ x‐ray reflectivity measurements during linear and isothermal annealings of a W/Si multilayer (ML) were performed, and successive disappearance and reappearance of the second and third ML Bragg maxima between 400 and 500 °C were observed. Such behavior is direct evidence of a long‐range interface shift, and was found to be connected with a substantial decrease of the electronic density of the expanding originally W layers and the ML period. Surprisingly, the changes take place without smearing‐out the interfaces. The results are explained by the Si diffusion into the W layers. © 1996 American Institute of Physics.
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61.05.cm X-ray reflectometry (surfaces, interfaces, films)
68.35.Ct Interface structure and roughness
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Activation volume for arsenic diffusion in germanium

Salman Mitha, Michael J. Aziz, David Schiferl, and David B. Poker

Appl. Phys. Lett. 69, 922 (1996); http://dx.doi.org/10.1063/1.116944 (3 pages) | Cited 16 times

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We have measured the effect of pressure on As diffusion in Ge. Diffusion anneals on ion‐implanted samples were carried out in a high‐temperature diamond anvil cell using fluid argon as a clean, hydrostatic pressure medium. At 575 °C over the pressure range 0.1–4 GPa, pressure slightly enhances the diffusivity, characterized by an activation volume of −1.7±1.4 cm3/mole or −0.12±0.10 times the atomic volume. The results call into question the prevailing view that diffusion of groups III, IV, and V elements are mediated entirely by vacancies. If diffusion of As is mediated entirely by vacancies then either the vacancy formation volume must be unexpectedly low or the energy of vacancy migration must be unexpectedly high. © 1996 American Institute of Physics.
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66.30.J- Diffusion of impurities
07.35.+k High-pressure apparatus; shock tubes; diamond anvil cells

Kinetics of solid phase epitaxy in buried amorphous Si layers formed by MeV ion implantation

J. C. McCallum

Appl. Phys. Lett. 69, 925 (1996); http://dx.doi.org/10.1063/1.116945 (3 pages) | Cited 12 times

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The kinetics of solid phase epitaxy have been measured in buried amorphous Si layers produced by ion implantation. Crystallization occurs simultaneously at both amorphous/crystalline interfaces of the buried layer. By collecting time resolved reflectivity data simultaneously at λ=1152 nm and λ=632.8 nm it is possible to accurately determine the crystallization rates at both interfaces. Both interfaces crystallize at a constant rate that is comparable to the intrinsic rate found for thick amorphous surface layers before rate retardation due to H infiltration has occurred. Thus, buried amorphous Si layers provide a suitable environment for studies of the intrinsic growth kinetics of amorphous Si. © 1996 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Np Solid phase epitaxy; growth from solid phases
61.72.uf Ge and Si
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis

In situ reflectance monitoring of InP/InGaAsP films grown by metalorganic vapor phase epitaxy

R. M. Lum, M. L. McDonald, J. C. Bean, J. Vandenberg, T. L. Pernell, S. N. G. Chu, A. Robertson, and A. Karp

Appl. Phys. Lett. 69, 928 (1996); http://dx.doi.org/10.1063/1.116946 (3 pages) | Cited 5 times

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We report the use of in situ reflectance spectroscopy for real‐time monitoring of the metalorganic vapor phase epitaxy (MOVPE) growth of InGaAsP films. In situ optical measurements have not been previously reported for this materials system because of its strong absorption in the spectral range of commonly available detectors (λ<1100 nm). To acquire reflectance data beyond the absorption regions of these films we used a grating spectrometer with a Si/PbS dual detector having a wavelength range of 400–2500 nm. Measurements were made during growth of InP/InGaAs/InP double heterostructures and 1.3 μm InGaAsP MQW laser device structures. The multiwavelength reflectance data enabled extraction of the film optical constants, determination of deposition rates to better than 1%, and provided nanometer scale thickness sensitivity for MQW samples. © 1996 American Institute of Physics.
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78.66.Fd III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.40.Fy Semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Analysis of the transport mechanism in GaAs/AlGaAs quantum‐well infrared photodetection structures using time resolved photocurrent measurements

S. Ehret, H. Schneider, C. Schönbein, G. Bihlmann, and J. Fleissner

Appl. Phys. Lett. 69, 931 (1996); http://dx.doi.org/10.1063/1.116947 (3 pages) | Cited 15 times

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We show that the transient intersubband photocurrent in a GaAs/AlGaAs quantum‐well infrared photodetector (QWIP) consists of two dynamical components, which are associated, respectively, with the drift motion of photoexcited carriers and with the extra injection current induced by the generated nonequilibrium space charges. The decay time τ of the latter component depends critically on the temperature of the sample and the applied bias voltage. For a temperature of T=22 K, decay times in excess of 15 μs are found. A simple model of the refilling process of the space charges is presented, showing, that the slow component corresponds approximately to the dielectric relaxation time of the structure along the growth direction. While the slow component in the present 8‐period structure corresponds to about 50% of the total photocurrent, it is negligible in standard QWIP structures containing 40 or more periods, where ⩾99% of the intersubband photocurrent proceeds on a picosecond time scale. © 1996 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
78.47.-p Spectroscopy of solid state dynamics
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors

Optimization of gate dopant concentration and microstructure for improved electrical and reliability characteristics of ultrathin oxides and N2O oxynitrides

Anthony I. Chou, Kafai Lai, Kiran Kumar, Jack C. Lee, Mark Gardner, and Jim Fulford

Appl. Phys. Lett. 69, 934 (1996); http://dx.doi.org/10.1063/1.116948 (3 pages) | Cited 2 times

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We study the effects of gate dopant species (boron, arsenic, or phosphorous) concentration (1×1019 cm−3–1×1021 cm−3) and microstructure (as‐deposited amorphous or polycrystalline silicon gate) on the electrical and reliability characteristics of ultrathin oxides and N2O oxynitrides (60 Å). In order to minimize polysilicon depletion, a high gate dopant concentration is desirable. However, for devices with BF2 doped gates, it is found that because of boron penetration through the thin gate oxide, device characteristics degrade as the gate doping concentration increases, thus an intermediate gate doping must be chosen. In contrast, samples with arsenic and phosphorous doped gates show no degradation as the doping level increases. Optimization of gate microstructure for N2O and O2 dielectrics is also discussed. © 1996 American Institute of Physics.
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73.61.Ng Insulators
77.55.-g Dielectric thin films

Raman spectra of indium nitride thin films grown by microwave‐excited metalorganic vapor phase epitaxy on (0001) sapphire substrates

Hyuk‐Joo Kwon, Yong‐Hyun Lee, Osamu Miki, Hirofumi Yamano, and Akira Yoshida

Appl. Phys. Lett. 69, 937 (1996); http://dx.doi.org/10.1063/1.116949 (3 pages) | Cited 40 times

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We report Raman scattering study on InN single crystalline films with wurtzite form. The films were grown on sapphire substrates by microwave‐excited metalorganic vapor phase epitaxy and optical phonon properties of the films were investigated. Both A1(LO) and E2(2) peaks, which are related to a longitudinal optical phonon mode and a doubly degenerated mode, respectively, were observed at 596 cm−1 with the full width of 36 cm−1 at half maximum intensity and at 495 cm−1 with the full width of 20 cm−1 at half maximum intensity. © 1996 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Observation of misfit dislocations at the InxGa1−xAs/GaAs interface by ballistic‐electron‐emission microscopy

E. Y. Lee, S. Bhargava, M. A. Chin, V. Narayanamurti, K. J. Pond, and K. Luo

Appl. Phys. Lett. 69, 940 (1996); http://dx.doi.org/10.1063/1.116950 (3 pages) | Cited 9 times

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We report ballistic‐electron‐emission microscopy (BEEM) imaging and spatially resolved spectroscopy of InxGa1−xAs/GaAs misfit dislocations 800 Å below the surface. Majority‐carrier scattering by a fraction of misfit dislocations was seen to locally reduce the BEEM current and to give logarithmic spatial dependence, which suggests charging of the dislocation cores. © 1996 American Institute of Physics.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.35.Ct Interface structure and roughness
68.37.-d Microscopy of surfaces, interfaces, and thin films
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