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19 Aug 1996

Volume 69, Issue 8, pp. 1023-1171

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Pulsed laser deposition of SBN:75 thin films with electro‐optic coefficient of 844 pm/V

Parviz Tayebati, Dhrupad Trivedi, and Martin Tabat

Appl. Phys. Lett. 69, 1023 (1996); http://dx.doi.org/10.1063/1.116919 (3 pages) | Cited 21 times

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In this letter we report on the pulsed laser epitaxial deposition of thin films of Sr0.75Ba0.25Nb2O6 on MgO substrates with measured diagonal Pockel’s coefficient r33=844 pm/V in these films. This is the largest linear electro‐optic coefficient reported to date in a thin film material. In order to measure this coefficient, we developed a modulated diffraction technique. This method is widely applicable to cases where the substrate is insulating and the optical axis is normal to the substrate. © 1996 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
42.70.-a Optical materials
78.20.Jq Electro-optical effects

Two‐dimensional electro‐optic imaging of THz beams

Q. Wu, T. D. Hewitt, and X.‐C. Zhang

Appl. Phys. Lett. 69, 1026 (1996); http://dx.doi.org/10.1063/1.116920 (3 pages) | Cited 131 times

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We report on a novel electro‐optic sampling system for real‐time terahertz (THz) imaging applications. By illuminating a 6×8 mm2 ZnTe crystal with a 300 μW optical sampling beam and detecting the beam with a digital CCD camera, we achieved time‐resolved images of pulsed far‐infrared radiation emitted from an unbiased GaAs wafer. At the focal point of the peak far‐infrared field, the THz beam diameter is approximately 0.75 mm (full width at half‐maximum). The temporal and spatial resolutions of this imaging system are mainly limited by the laser pulse duration and the diffraction limit of the THz beam, respectively. © 1996 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
78.20.Jq Electro-optical effects
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.30.-d Imaging and optical processing

Low‐threshold picosecond optical parametric oscillation in quasi‐phase‐matched lithium niobate

V. Pruneri, S. D. Butterworth, and D. C. Hanna

Appl. Phys. Lett. 69, 1029 (1996); http://dx.doi.org/10.1063/1.118166 (3 pages) | Cited 11 times

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We report a singly resonant optical parametric oscillator in periodically poled lithium niobate, synchronously pumped by the second harmonic of an amplified 10 μs pulse train from a continuous wave mode‐locked Nd:YLF laser. Pulses of ∼2 ps duration have been generated over the tuning range from 883 to 1285 nm with a typical threshold of 200 mW average power within the 10 μs envelope. The M2 beam quality factor for the generated signal was ∼1.1, indicating absence of any significant photorefractive damage. © 1996 American Institute of Physics.
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42.65.Yj Optical parametric oscillators and amplifiers
42.70.Mp Nonlinear optical crystals

Improvement of optical transmission of KTiOPO4 crystals by growth in nitrogen ambient

Akio Miyamoto, Yusuke Mori, Takatomo Sasaki, and Sadao Nakai

Appl. Phys. Lett. 69, 1032 (1996); http://dx.doi.org/10.1063/1.116921 (3 pages) | Cited 1 time

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KTiOPO4 (KTP) crystals were grown from K6 (K6P4O13) flux in various ambients. A colorless KTP crystal was obtained in an oxygen deficient ambient. It has been found that the absorption coefficient in the region from 400 to 550 nm and Pt inclusion concentration increased with the oxygen concentration in the growth ambient. The strong correlation between the absorption coefficient and Pt impurity concentration suggests that the absorption of KTP crystal is attributed to incorporated Pt ions in the crystal. © 1996 American Institute of Physics.
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42.70.Mp Nonlinear optical crystals
77.84.Fa KDP- and TGS-type crystals
81.10.Dn Growth from solutions
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.72.S- Impurities in crystals

Photodecay mechanisms in side chain nonlinear optical polymethacrylates

Jan Vydra, Hanno Beisinghoff, Theo Tschudi, and Manfred Eich

Appl. Phys. Lett. 69, 1035 (1996); http://dx.doi.org/10.1063/1.116922 (3 pages) | Cited 21 times

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The chemical and physical properties of photobleached nonlinear optical (NLO)‐polymethacrylates were studied in order to investigate photobleaching mechanisms. We have shown by three key measurement techniques (infrared‐spectroscopy, mass spectrometry, and gel permeation chromatography) that the predominant bleaching process is an irreversible decomposition of the NLO moieties accompanied by a broadening of the polymer molecular weight distribution. The quantum yield of the chromophore degradation determined by the evaluation of the bleaching kinetics fit is in agreement with typical data from comparable chromophores. It was found that bleaching causes an increase in surface roughness of NLO‐polymer films, causing an increase in waveguide loss. Smoothing of the film surface by an annealing step leads to a lowering of bleaching induced waveguide loss. © 1996 American Institute of Physics.
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42.70.Jk Polymers and organics
42.82.Cr Fabrication techniques; lithography, pattern transfer
78.66.Qn Polymers; organic compounds

Novel quantum box intersubband lasing mechanism based on image charges

S. J. Lee and J. B. Khurgin

Appl. Phys. Lett. 69, 1038 (1996); http://dx.doi.org/10.1063/1.116923 (3 pages) | Cited 4 times

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We consider theoretically a novel lasing scheme in semiconductor quantum boxes. Ultralow threshold pumping power can be obtained due to the development of images charges in surrounding layers. The impact on the intersubband lasing is stressed. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.66.-w Optical properties of specific thin films

Elasto‐optic anisotropy and polarization orientation of vertical‐cavity surface‐emitting semiconductor lasers

A. K. Jansen van Doorn, M. P. van Exter, and J. P. Woerdman

Appl. Phys. Lett. 69, 1041 (1996); http://dx.doi.org/10.1063/1.116924 (3 pages) | Cited 56 times

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We report a new technique to apply strain to a vertical‐cavity surface‐emitting semiconductor laser. This has allowed us to study the relation between strain and birefringence. We have found that the corresponding tensor is anisotropic, with a measured anisotropy 2p44/(p11−p12)=4.7±0.6. This anisotropy explains the natural preference of the polarization for the [110]/[110] axes. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
81.40.Tv Optical and dielectric properties related to treatment conditions
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.20.Fm Birefringence

Fine droplets of liquid crystals in a transparent polymer and their response to an electric field

Shiro Matsumoto, Marthe Houlbert, Takayoshi Hayashi, and Ken‐ichi Kubodera

Appl. Phys. Lett. 69, 1044 (1996); http://dx.doi.org/10.1063/1.116925 (3 pages) | Cited 23 times

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Fine droplets of nematic liquid crystal (LC) with a diameter less than 100 nm were obtained in ultraviolet curing polymers. The transparency of the material was kept high in the infrared regions because there was little scattering in comparison to materials containing much larger droplets. The fine droplets were found to respond to an electric field, causing a change in birefringence. This change was about 0.0004 at the applied voltage of 5.5 V/μm. The special features of low transmission loss and easy film formation will enable one to apply LCs to optical devices of the wave guide type. © 1996 American Institute of Physics.
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42.70.Df Liquid crystals
78.20.Jq Electro-optical effects
78.66.Vs Fine-particle systems

Polysiloxane‐based photorefractive polymers for digital holographic data storage

C. Poga, P. M. Lundquist, V. Lee, R. M. Shelby, R. J. Twieg, and D. M. Burland

Appl. Phys. Lett. 69, 1047 (1996); http://dx.doi.org/10.1063/1.116926 (3 pages) | Cited 18 times

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A photorefractive polymer system based on a substituted polysiloxane backbone is described. In addition to high holographic diffraction efficiency and reasonable writing speed, the material reported exhibits excellent optical clarity and low optical scattering characteristics. These latter optical properties are necessary in high density holographic digital data storage applications. The utility of the polysiloxane based photorefractive polymers for storage applications is demonstrated by recording digital data at a density of 0.52 Mbit/cm2 and reading it back without error. © 1996 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Ln Holographic recording materials; optical storage media
42.40.Lx Diffraction efficiency, resolution, and other hologram characteristics

Spontaneous emission measurements for resolving damping mechanisms in direct modulation of quantum well lasers

Ta‐Chung Wu, Dan Vassilovski, David M. Cutrer, Sidney C. Kan, and Kam Y. Lau

Appl. Phys. Lett. 69, 1050 (1996); http://dx.doi.org/10.1063/1.116927 (3 pages) | Cited 2 times

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We demonstrate a measurement technique for determining the contribution of carrier transport effect on the maximum modulation bandwidth in quantum well lasers. This technique independently measures the ratio of the effective carrier capture to escape times, as well as the contribution from intraband damping mechanisms, in an operating laser. Every single parameter in the present model for modulation dynamics of quantum well lasers can now be determined experimentally, which enables a consistency check on its validity. © 1996 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Nitrogen incorporation in thin oxides by constant current N2O plasma anodization of silicon and N2 plasma nitridation of silicon oxides

Sita R. Kaluri and Dennis W. Hess

Appl. Phys. Lett. 69, 1053 (1996); http://dx.doi.org/10.1063/1.116928 (3 pages) | Cited 29 times

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A helical resonator plasma source was used to perform constant current N2O plasma anodization of silicon and N2 plasma nitridation of silicon oxides. The nitrogen bonding structure and distribution in the oxides were studied using angle resolved x‐ray photoelectron spectroscopy. Nitrogen corresponding to a N–Si3 bonding structure was detected at the silicon side of the interface, the Si–SiO2 interfacial region, and the bulk oxide in a 4.5 nm N2O plasma grown oxide. The distribution profile of nitrogen in the oxide, determined from a normalized N 1s/Si 2p(ox) ratio, showed a continuous decrease from the silicon side of the interface towards the bulk oxide. Also, strong nitrogen peaks corresponding to either a N–Si3 or a N–Si2 bonding structure were detected throughout a 9.1 nm O2 plasma grown oxide after postanodization constant current N2 plasma nitridation. © 1996 American Institute of Physics.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
79.60.Jv Interfaces; heterostructures; nanostructures
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
77.55.-g Dielectric thin films

Effects of electron temperature in high‐density Cl2 plasma for precise etching processes

Seiji Samukawa and Tsutomu Tsukada

Appl. Phys. Lett. 69, 1056 (1996); http://dx.doi.org/10.1063/1.116929 (3 pages) | Cited 11 times

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Silicon etching characteristics are investigated by using radio‐frequency (rf) biased ultrahigh frequency (UHF) and other conventional plasmas (electron cycotron resonance plasma, inductive coupled plasma, surface wave plasma) determined by using a Cl2 etchant. The silicon etching rate and its pattern dependence are significantly improved by decreasing the electron temperature when supplying a 600‐kHz rf bias. In particular, use of the UHF plasma allows high‐rate and microloading‐free silicon trench etching. It is suggested that a larger number of negative ions are generated in the UHF plasma because of the extremely low electron temperature. The low‐frequency bias accelerates the negative and positive ions alternately to the substrate surface. As a result, the low‐frequency biased UHF plasma reduces the charge accumulation on the substrate. © 1996 American Institute of Physics.
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81.65.Cf Surface cleaning, etching, patterning
85.40.Hp Lithography, masks and pattern transfer
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Formation of Schottky barriers at interfaces between metals and molecular semiconductors of p‐ and n‐type conductances

Y. Harima, H. Okazaki, Y. Kunugi, K. Yamashita, H. Ishii, and K. Seki

Appl. Phys. Lett. 69, 1059 (1996); http://dx.doi.org/10.1063/1.116930 (3 pages) | Cited 18 times

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In order to clarify electronic structures of molecular semiconductor/metal interfaces, a Schottky–Mott rule is examined for vacuum‐sublimed films of two kinds of porphyrins, which have similar chemical structures, but opposite conductance types. The result shows that Schottky barrier heights are simply determined by the difference in work function between the porphyrin solids and metals irrespective of the conductance types of the porphyrin semiconductors, indicative of negligible influence of surface states on the Schottky barrier formation. Measurements of photocurrent generation efficiencies at these Schottky junctions indicate that a surface recombination process is not a major deactivation route for electron‐hole pairs generated in the molecular semiconductors by light. © 1996 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Cg Contact resistance, contact potential
72.80.Le Polymers; organic compounds (including organic semiconductors)
85.30.Hi Surface barrier, boundary, and point contact devices

Stability of hot‐wire deposited amorphous‐silicon thin‐film transistors

H. Meiling and R. E. I. Schropp

Appl. Phys. Lett. 69, 1062 (1996); http://dx.doi.org/10.1063/1.116931 (3 pages) | Cited 15 times

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For the first time hydrogenated amorphous silicon, a‐Si:H, deposited with the hot‐wire technique is incorporated in thin‐film transistors (TFTs). Amorphous silicon was deposited at a rate of 20 Å/s. TFTs with a switching ratio of 105, a threshold voltage of 16.9 V, and a field‐effect mobility μs of 0.001 cm2/V s are obtained. Upon gate voltage stress, virtually no change in any of these TFT parameters is observed. Conventional state‐of‐the‐art TFTs deposited in a 13.56 MHz glow discharge showed a threshold voltage shift of more than +12 V. The interface between the gate dielectric and the hot‐wire a‐Si:H layer needs further optimization. After gate voltage stress, the TFTs containing hot‐wire a‐Si:H have superior quality with respect to the threshold voltage. © 1996 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.Tv Field effect devices
73.61.Jc Amorphous semiconductors; glasses
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Studies of MoS2 structures produced by electron irradiation

M. José‐Yacamán, H. López, P. Santiago, D. H. Galván, I. L. Garzón, and A. Reyes

Appl. Phys. Lett. 69, 1065 (1996); http://dx.doi.org/10.1063/1.116932 (3 pages) | Cited 33 times

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In this letter, we report the study of MoS2 crystals after irradiation with a high dose of electrons. A pelletron accelerator was used to irradiate the sample with electrons at an energy of 0.5 MeV. Samples were examined in high resolution electron microscopy. Two main structures were observed: onion layers with fullerene like structure and others with their planes rotated with respect to each other by well‐defined angles. We present a calculation showing that relative rotation of the sulphur layers by 3°, 5°, 8°, and 16° basically have the same average energy as the unrotated structure. Therefore rotations of the layers through those angles will be favored. Instability on the structure produced by irradiation will induce rotations on the structure. © 1996 American Institute of Physics.
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61.80.Fe Electron and positron radiation effects
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
61.66.Fn Inorganic compounds

Dosimetric characteristics of ultraviolet and x‐ray‐irradiated KBr:Eu2+ thermoluminescence crystals

R. Meléndrez, R. Pérez‐Salas, R. Aceves, T. M. Piters, and M. Barboza‐Flores

Appl. Phys. Lett. 69, 1068 (1996); http://dx.doi.org/10.1063/1.116933 (3 pages) | Cited 5 times

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Thermoluminescence (TL) characteristics of KBr:Eu2+ (150 ppm) previously exposed to ultraviolet (UV) light (200–300 nm) and x‐ray radiation at room temperature have been determined. The TL glow curve of UV‐irradiated samples is composed of six peaks located at 337, 384, 402, 435, 475, and 510 K. The TL glow curves of x‐irradiated samples show mainly a TL peak around 384 K. The TL intensities of UV‐irradiated (402 and 510 K glow peaks) and x‐irradiated specimens present a linear dependence as a function of radiation dose as well as fading stability 300 s after irradiation. These results further enhance the possibilities of using europium‐doped materials in nonionizing (actinic region) and ionizing radiation detection and dosimetry applications. © 1996 American Institute of Physics.
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78.60.Kn Thermoluminescence
29.40.Wk Solid-state detectors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.80.Cb X-ray effects

Electrode interface effects on indium–tin–oxide polymer/metal light emitting diodes

Emmanuelle Gautier, André Lorin, Jean‐Michel Nunzi, Aude Schalchli, Jean‐Jacques Benattar, and Denis Vital

Appl. Phys. Lett. 69, 1071 (1996); http://dx.doi.org/10.1063/1.116934 (3 pages) | Cited 36 times

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A spin‐coated doped‐polymer light emitting diode is studied. Blue electroluminescence decays within 1 h. X‐ray reflectivity analysis of the aged diode shows the formation of an interfacial layer made of the ITO semitransparent electrode indiffused into the polymer. X‐ray reflectivity stands as a powerful tool for aging studies of organic semiconducting devices. © 1996 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
85.60.Jb Light-emitting devices
61.05.cm X-ray reflectometry (surfaces, interfaces, films)

Deposition of diamond‐like carbon films by electrolysis of methanol solution

Hao Wang, Ming‐Rong Shen, Zhao‐Yuan Ning, Chao Ye, Chuan‐Bao Cao, Hai‐Yan Dang, and He‐Sun Zhu

Appl. Phys. Lett. 69, 1074 (1996); http://dx.doi.org/10.1063/1.116935 (3 pages) | Cited 50 times

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By electrolysis of the methanol solution, an attempt was made to deposit diamondlike carbon (DLC) films on silicon substrate at temperature of less than 60 °C. Substrates were negatively biased with a dc potential of 0 to −3000 V. IR spectra showed that the O–H, C–H, and C–O vibration bands of electrolyte decreased remarkably after electrolysis and a new peak characterized as the C=C bond appeared. The deposited films were characterized as DLC films by Raman spectroscopy. © 1996 American Institute of Physics.
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81.15.Pq Electrodeposition, electroplating
68.55.-a Thin film structure and morphology
61.43.Dq Amorphous semiconductors, metals, and alloys

Effect of CeO2 interlayer deposition temperature on growth behavior of Bi4Ti3O12/CeO2/MgO heterostructures

W. Jo, G. W. Park, D. W. Kim, and T. W. Noh

Appl. Phys. Lett. 69, 1077 (1996); http://dx.doi.org/10.1063/1.117063 (3 pages)

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CeO2 interlayers were used to control growth behavior of Bi4Ti3O12 thin films on MgO(001) substrates. The CeO2 layer grown at 740 °C had a preferential orientation with its c‐axis normal to the film surface, so it could be used to grow an epitaxial Bi4Ti3O12(001)/CeO2(001)/MgO(001) heterostructure. On the other hand, the CeO2 layer grown at 650 °C showed a mixed texture of (001) and (111), and this interlayer enabled us to get a preferentially oriented Bi4Ti3O12(117)/CeO2(111)MgO(001) multilayer structure. © 1996 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Fg Pulsed laser ablation deposition

Energy level bending and alignment at the interface between Ca and a phenylene vinylene oligomer

Y. Park, V. Choong, E. Ettedgui, Y. Gao, B. R. Hsieh, T. Wehrmeister, and K. Müllen

Appl. Phys. Lett. 69, 1080 (1996); http://dx.doi.org/10.1063/1.117064 (3 pages) | Cited 44 times

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We have studied the interface formation of a vinylene phenylene oligomer with a Ca substrate using photoemission spectroscopy. The evolution of core and valence spectra during the deposition of the oligomer on Ca has indicated the molecular energy level bending. The total energy level bending was 0.5 eV and the thickness of the level bending region was about 100 Å. We propose an energy level diagram of the oligomer‐Ca interface based on the information obtained from the photoemission spectra. © 1996 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
79.60.Fr Polymers; organic compounds
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Lomer–Cottrell misfit dislocations in [001] In0.2Ga0.8As/GaAs single heterostructures

J. Zou and D. J. H. Cockayne

Appl. Phys. Lett. 69, 1083 (1996); http://dx.doi.org/10.1063/1.117065 (3 pages) | Cited 8 times

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Lomer–Cottrell misfit dislocations in [001] In0.2Ga0.8As/GaAs single heterostructures are observed using high resolution electron microscopy. They result from the interaction of two parallel 60° dissociated misfit dislocations lying on intersecting {111} planes. Elasticity calculation is carried out to estimate the geometrical conditions in which the interaction can occur. © 1996 American Institute of Physics.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Structural modeling of the possible growth of oriented textured single‐crystal diamond film on a silicon (111) surface

R. Q. Zhang, W. L. Wang, J. Esteve, and E. Bertran

Appl. Phys. Lett. 69, 1086 (1996); http://dx.doi.org/10.1063/1.117066 (3 pages) | Cited 10 times

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A model based on semi‐empirical molecular orbital calculations and molecular mechanics is proposed for oriented textured diamond film growth on the Si(111) surface. The diamond <111≳ axis in our model is parallel to the silicon substrate <111≳ while the diamond <110≳ is rotated 10.89° around the <111≳ axis referenced to the <110≳ of the silicon substrate. The atomic density of the grown diamond in one dimension perpendicular to the <111≳ has a ratio 1.003:1 to that of a natural crystal, and thus is much better than the 1:1.015 of the heteroepitaxial diamond on the silicon (001) surface. We conjecture that this improvement in lattice match is important to achieve single‐crystal growth. A model for heteroepitaxial growth with a diamond <111≳//Si<111≳ and diamond <110≳//Si<110≳ relationship is also studied but is found to have poorer bonding to the substrate and has a larger residual mismatch of 1:1.015. © 1996 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
68.35.Ct Interface structure and roughness
61.46.-w Structure of nanoscale materials

Defect characterization of etch pits in ZnSe based epitaxial layers

G. D. U’Ren, M. S. Goorsky, G. Meis‐Haugen, K. K. Law, T. J. Miller, and K. W. Haberern

Appl. Phys. Lett. 69, 1089 (1996); http://dx.doi.org/10.1063/1.117067 (3 pages) | Cited 8 times

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Three distinct etch pit features in ZnSe based epitaxial layers have been identified. The features were observed with optical dark field microscopy and confirmed to be pits using scanning electron microscopy. Using transmission electron microscopy, we associated different etch pits with characteristic crystallographic defects which are common in epitaxially grown II–VI materials. Frank‐type stacking faults form the largest etch pit followed by a paired configuration of Shockley‐ type stacking faults. The smallest etch pit is due to a single Shockley‐type stacking fault. This study represents one of the first examples of identifying crystallographic defects in II–VI wide bandgap materials using etch pit delineation. © 1996 American Institute of Physics.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Nn Stacking faults and other planar or extended defects

Polycrystalline silicon formation by pulsed rapid thermal annealing of amorphous silicon

Yue Kuo and P. M. Kozlowski

Appl. Phys. Lett. 69, 1092 (1996); http://dx.doi.org/10.1063/1.117068 (3 pages) | Cited 19 times

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A method of forming polycrystalline silicon (polysilicon) from amorphous silicon in several seconds is presented in this letter. This solid‐phase crystallization process was carried out with the pulsed rapid thermal annealing method using a metal as the seed. The crystal‐growth process was monitored with an optical microscope and the polysilicon structure was confirmed by a micro‐Raman shift measurement. Polysilicon film within a 30‐micrometer channel was formed using 3 pulses of 1‐s 800 °C heating/5‐s cooling. It took more than 13 h using a 500 °C furnace annealing method to form polysilicon film within a 12‐micrometer channel. Since the substrate is only exposed to the high temperature for a very short period of time, heat effects in the substrate are minimized. This method has the potential for use in the fabrication of small geometry devices, such as thin film transistors, on large‐area, low temperature glass substrates. © 1996 American Institute of Physics.
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64.70.K- Solid-solid transitions
81.05.Cy Elemental semiconductors

Formation of coherent superdots using metal‐organic chemical vapor deposition

N. N. Ledentsov, J. Böhrer, D. Bimberg, I. V. Kochnev, M. V. Maximov, P. S. Kop’ev, Zh. I. Alferov, A. O. Kosogov, S. S. Ruvimov, P. Werner, and U. Gösele

Appl. Phys. Lett. 69, 1095 (1996); http://dx.doi.org/10.1063/1.117069 (3 pages) | Cited 27 times

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We demonstrate direct growth of electronically coupled zero‐dimensional structures forming a super‐quantum dot using metal‐organic chemical vapor deposition. After the first sheet with InGaAs pyramids is formed on GaAs surface, alternate short‐period GaAs‐InGaAs deposition leads to spontaneous formation of layered structures driven by the energetics of Stranski–Krastanow growth. As a result columnlike InGaAs structures each having a characteristic lateral size of ∼23 nm at the top and composed of many closely packed InGaAs parts are formed. The full width at half maximum of superdot luminescence of 28 meV at 8 K indicates good average uniformity of the superdot ensemble. Absorption is found to be resonant with luminescence. © 1996 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.Fd III-V semiconductors
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