For the first time hydrogenated amorphous silicon, a‐Si:H, deposited with the hot‐wire technique is incorporated in thin‐film transistors (TFTs). Amorphous silicon was deposited at a rate of 20 Å/s. TFTs with a switching ratio of 105, a threshold voltage of 16.9 V, and a field‐effect mobility μs of 0.001 cm2/V s are obtained. Upon gate voltage stress, virtually no change in any of these TFT parameters is observed. Conventional state‐of‐the‐art TFTs deposited in a 13.56 MHz glow discharge showed a threshold voltage shift of more than +12 V. The interface between the gate dielectric and the hot‐wire a‐Si:H layer needs further optimization. After gate voltage stress, the TFTs containing hot‐wire a‐Si:H have superior quality with respect to the threshold voltage. © 1996 American Institute of Physics.