APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

26 Aug 1996

Volume 69, Issue 9, pp. 1179-1335

Page 1 of 3 Pages Next Page | Jump to Page

Nanometer‐scale absorption spectroscopy by near‐field photodetection optical microscopy

R. C. Davis and C. C. Williams

Appl. Phys. Lett. 69, 1179 (1996); http://dx.doi.org/10.1063/1.117403 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Near‐field photodetection optical microscopy (NPOM) is a fundamentally new approach to near‐field optical microscopy. This scanning probe technique uses a nanometer‐scale photodiode detector which absorbs optical power directly as it is scanned in the near field of an illuminated sample surface. We have applied NPOM to measure the visible absorption spectrum of dye molecules embedded in a single 300 nm polystyrene sphere. The near‐field absorption spectrum is obtained by measuring the NPOM probe photocurrent while the wavelength of the illumination pump beam is scanned from 450 to 800 nm. Peaks are identified at 567, 608, and 657 nm in the near‐field spectrum of the single‐dyed polystyrene sphere. These peak positions are in good agreement with far‐field absorption measurements performed on many dyed polystyrene spheres. © 1996 American Institute of Physics.
Show PACS
07.79.Fc Near-field scanning optical microscopes
42.79.-e Optical elements, devices, and systems

Degradation of liquid crystal device performance due to selective adsorption of ions

S. H. Perlmutter, D. Doroski, and G. Moddel

Appl. Phys. Lett. 69, 1182 (1996); http://dx.doi.org/10.1063/1.117404 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
Performance degradation in liquid crystal cells was studied by analyzing the time evolution of optical and integrated current vs voltage hysteresis curves as test cells were subjected to a dc bias. We find evidence for permanent increases in liquid crystal mobile ion populations, the primary cause of device performance degradation, and suggest this permanent increase is due to selective adsorption by the alignment layers of ions of a single charge sign combined with the presence of a neutral ionizable species in the liquid crystal. © 1996 American Institute of Physics.
Show PACS
42.70.Df Liquid crystals
42.79.Hp Optical processors, correlators, and modulators
42.79.Kr Display devices, liquid-crystal devices
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
68.03.Fg Evaporation and condensation of liquids

Combined influence of design and carrier scattering on the ultrafast emission dynamics of quantum well microcavity lasers

F. Jahnke, H. C. Schneider, and S. W. Koch

Appl. Phys. Lett. 69, 1185 (1996); http://dx.doi.org/10.1063/1.117405 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
A microscopic theory for vertical‐cavity surface‐emitting lasers (VCSELs) with quantum‐well active layers is applied to study the transient gain dynamics, nonequilibrium carrier effects and the influence of the laser design. We investigate how the laser response on femtosecond pulse excitation can be controlled in terms of (i) excitation conditions of the VCSEL, (ii) the mirror design, which allows to change the cavity quality and the resonance frequency, and (iii) the number and position of active semiconductor quantum‐wells. © 1996 American Institute of Physics.
Show PACS
42.55.Sa Microcavity and microdisk lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Photoreversible optical nonlinearities of polymeric films containing spiropyran with long alkyl chains

Nobuyuki Tamaoki, Edward Van Keuren, Hiro Matsuda, Kan Hasegawa, and Tsuguo Yamaoka

Appl. Phys. Lett. 69, 1188 (1996); http://dx.doi.org/10.1063/1.117406 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
It was demonstrated that the third‐order optical nonlinearity of polymer films could be reversibly controlled by the photochromic conversion and following J‐aggregate formation of spiropyran embedded in an inert polymer matrix. Patterns consisting of areas with high and low third‐order nonlinear optical activities were prepared by imagewise exposure of the photochromic films followed by thermal treatment to form thermally stable J aggregates of photoinduced merocyanine in the exposed area. This system could be useful in developing new unconventional optical devices based on optical nonlinearities, including new types of spatial light modulators. © 1996 American Institute of Physics.
Show PACS
42.70.Jk Polymers and organics
42.65.An Optical susceptibility, hyperpolarizability

Novel all optical light modulation based on complex refractive index changes of organic dye‐doped polymer film upon photoexcitation

Toshihiko Nagamura and Takahiro Hamada

Appl. Phys. Lett. 69, 1191 (1996); http://dx.doi.org/10.1063/1.117407 (3 pages) | Cited 21 times

Full Text: | Download PDF

Show Abstract
A novel all‐optical light modulation has been proposed based on photoinduced changes of an imaginary part of complex refractive index in guided wave geometry. Very fast and repeated modulation of a reading beam (reflected intensity) was demonstrated at the incident angle corresponding to a sharp guided wave resonance using phthalocyanine‐doped poly(vinyl alcohol) film as a photoresponsive layer and a nanosecond pulsed laser as a writing beam. Such responses were mainly due to the formation and decay of excited triplet phthalocyanine. The rise and fall time was markedly improved as compared with previous systems based on photothermal changes of the refractive index. © 1996 American Institute of Physics.
Show PACS
42.79.Hp Optical processors, correlators, and modulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Jk Polymers and organics

Studies of the temporal and spectral shape of terahertz pulses generated from photoconducting switches

Christoph Ludwig and Jürgen Kuhl

Appl. Phys. Lett. 69, 1194 (1996); http://dx.doi.org/10.1063/1.117408 (3 pages) | Cited 22 times

Full Text: | Download PDF

Show Abstract
We present a systematic investigation of the operation conditions of photoconductive switches fabricated on LT‐GaAs as sources of THz pulses. We find a pronounced dependence of the THz pulse intensities and spectra on bias voltage and excitation density, which can be explained in terms of carrier dynamics and screening of the electric bias field. This study provides guidelines for the selection of the optimal operation parameters to obtain short THz pulses with a given geometry of the photoconductive switch. © 1996 American Institute of Physics.
Show PACS
85.30.De Semiconductor-device characterization, design, and modeling
72.40.+w Photoconduction and photovoltaic effects
84.40.-x Radiowave and microwave (including millimeter wave) technology

Measurement of electro‐optic effects in single crystal films of N‐(4‐nitrophenyl)‐L‐prolinol

Jianjun Xu, Ligui Zhou, and M. Thakur

Appl. Phys. Lett. 69, 1197 (1996); http://dx.doi.org/10.1063/1.117409 (2 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
The electro‐optic properties of single crystal films of N‐(4‐nitrophenyl)‐ L‐prolinol (NPP) were evaluated. The direct coating technique was used to form the electrodes on the surface of the single‐crystal film samples. The ac voltage and lock‐in technique were used to measure the electro‐optic coefficients. The electro‐optic effects for different orientation of electrodes on a single‐crystal film sample were measured. The dependence of the field induced birefringence on the orientation of electric field with respect to the charge transfer axis was evaluated. The results show that for NPP ∣n3 xr12− n3 yr22∣=340 pm/V and r12=65 pm/V. The results are promising for various application in electro‐optics involving appropriate device geometries. © 1996 American Institute of Physics.
Show PACS
78.20.Jq Electro-optical effects
78.66.Qn Polymers; organic compounds

High‐reflectivity, wide‐bandwidth optical phase conjugation via four‐wave mixing in potassium vapor

M. Y. Lanzerotti, R. W. Schirmer, and Alexander L. Gaeta

Appl. Phys. Lett. 69, 1199 (1996); http://dx.doi.org/10.1063/1.117410 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
We report on a high‐reflectivity (up to 670%) wide‐bandwidth (up to 230 MHz) phase‐conjugate mirror formed using backward‐four‐wave mixing with continuous‐wave pump beams in a 2‐mm potassium vapor cell. The reflectivities and bandwidths are significantly larger than have been measured previously, and the bandwidth is ten times greater than is predicted theoretically. The reflectivity‐bandwidth product is more than an order of magnitude improvement over those previously achieved with other continuous‐wave phase‐conjugate systems. © 1996 American Institute of Physics.
Show PACS
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Mechanisms of recombination in GaN photodetectors

F. Binet, J. Y. Duboz, E. Rosencher, F. Scholz, and V. Härle

Appl. Phys. Lett. 69, 1202 (1996); http://dx.doi.org/10.1063/1.117411 (3 pages) | Cited 59 times

Full Text: | Download PDF

Show Abstract
Steady‐state and transient responses of a nonintentionally doped GaN photodetector are investigated. The kinetics of the photoresponse demonstrate the existence of deep levels in the gap, acting as recombination centers with an acceptor character. The photoresponse displays two competing processes: a bimolecular recombination, dominating at high optical power range, and a monomolecular recombination involving long response times. The observed persistent photoconductivity and the huge photoconductive gain are due to the small electron capture cross section and a much faster hole capture rate. © 1996 American Institute of Physics.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
71.55.Eq III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Rapid thermal annealing using the combustion of H2 with N2O

T. Sameshima, Y. Sunaga, N. Takashima, and A. Tajima

Appl. Phys. Lett. 69, 1205 (1996); http://dx.doi.org/10.1063/1.117412 (3 pages)

Full Text: | Download PDF

Show Abstract
The combustion of H2 gas with N2O gas was investigated in order to rapidly heat substrate to a high temperature. A transient thermometry with a 100‐nm‐thick Cr film as a temperature sensor formed on quartz substrate was used to measure temperature change at the surface. The gas combustion was induced by heating a W filament. It propagated with a velocity higher than 100 m/s throughout a chamber for an initial total gas pressure of 500 Torr ([H2]/[N2O]=1). The sample surface is heated to 800 °C for an initial substrate temperature at 300 °C. The full heating time width at half maximum was 4.5 ms. This letter shows a possibility of millisecond‐order rapid thermal treatment. © 1996 American Institute of Physics.
Show PACS
05.70.Ce Thermodynamic functions and equations of state
68.60.Dv Thermal stability; thermal effects
68.35.Md Surface thermodynamics, surface energies

Deformation behavior of Zr65Al10Ni10Cu15 glassy alloy with wide supercooled liquid region

Yoshihito Kawamura, Tsutomu Shibata, Akihisa Inoue, and Tsuyoshi Masumoto

Appl. Phys. Lett. 69, 1208 (1996); http://dx.doi.org/10.1063/1.117413 (3 pages) | Cited 85 times

Full Text: | Download PDF

Show Abstract
We report the stress‐strain behavior for a Zr65Al10Ni10Cu15 (at.%) glassy alloy with a significant supercooled liquid region of 105 K. The transition temperature from inhomogeneous deformation to a homogeneous one increases with increasing strain rate. The alloy in the supercooled liquid state, however, exhibited the homogeneous deformation even at higher strain rates above 0.5 s−1. The strength was also dependent on the strain rate and independent of temperature in the inhomogeneous deformation region, and was sensitive to both strain rate and temperature in the homogeneous region. The stress‐strain curves in the homogeneous deformation mode were accompanied by a stress overshoot and its height increases with increasing temperature and strain rate. © 1996 American Institute of Physics.
Show PACS
81.40.Lm Deformation, plasticity, and creep
81.05.Kf Glasses (including metallic glasses)

Ultrafast interstitial injection during transient enhanced diffusion of boron in silicon

H. G. A. Huizing, C. C. G. Visser, N. E. B. Cowern, P. A. Stolk, and R. C. M. de Kruif

Appl. Phys. Lett. 69, 1211 (1996); http://dx.doi.org/10.1063/1.117414 (3 pages) | Cited 21 times

Full Text: | Download PDF

Show Abstract
The injection of interstitials during annealing of nonamorphizing Si implants has been monitored by means of sharp boron‐doped marker layers grown by reduced pressure chemical vapor deposition. The boron diffusivity enhancement measured during the initial annealing stages (t<15 s) at 700 °C is at least an order of magnitude larger than the enhancement during subsequent annealing. The high supersaturation of interstitials during the early stages of the anneal induces immobilization of boron down to concentrations of ≊1×1017 cm−3, consistent with interstitial‐driven boron clustering. The ultrafast diffusion sets lower limits for the silicon and boron interstitial diffusivities at 700 °C of 2×10−10 cm2 s−1 and 2×10−13 cm2 s−1, respectively. © 1996 American Institute of Physics.
Show PACS
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.J- Point defects and defect clusters
66.30.J- Diffusion of impurities

Identification of first and second layer aluminum atoms in dilute AlGaAs using cross‐sectional scanning tunneling microscopy

Arthur R. Smith, Kuo‐Jen Chao, C. K. Shih, K. A. Anselm, A. Srinivasan, and B. G. Streetman

Appl. Phys. Lett. 69, 1214 (1996); http://dx.doi.org/10.1063/1.117415 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
Cross‐sectional scanning tunneling microscopy is used to study dilute AlxGa1−xAs with x=0.05 to investigate the bonding configurations within this ternary alloy. Atomically resolved scanning tunneling microscopy images combined with symmetry considerations provide the assignment of first and second layer aluminum atoms. The Al–Al pair distribution function based on the experimental data is compared with the theoretical pair distribution function of a random alloy. While there exists a qualitative agreement, small deviations from the ideal random distribution are also found. © 1996 American Institute of Physics.
Show PACS
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
61.66.Dk Alloys
07.79.Cz Scanning tunneling microscopes

Elastic characterization of a supported porous silicon layer by Brillouin scattering

G. T. Andrews, J. Zuk, H. Kiefte, M. J. Clouter, and E. Nossarzewska‐Orlowska

Appl. Phys. Lett. 69, 1217 (1996); http://dx.doi.org/10.1063/1.117416 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
Brillouin spectroscopy was used to study surface acoustic waves on a supported layer of (111)‐oriented porous silicon having a thickness of 2.7 μm and a porosity of 30%. The Rayleigh surface wave velocities were found to be significantly lower than corresponding velocities for crystalline silicon. A complete set of elastic constants for the porous layer was determined from the measured directional dependence of the surface wave velocity in the (111) plane. The best‐fit constants are C11=56.0±0.7 GPa, C12=6.7±0.3 GPa and C44=37.0±0.8 GPa. The anisotropy factor, η=1.50 indicates that the porous layer is elastically anisotropic. © 1996 American Institute of Physics.
Show PACS
62.20.D- Elasticity
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Interaction of threading and misfit dislocations in a strained epitaxial layer

K. W. Schwarz and J. Tersoff

Appl. Phys. Lett. 69, 1220 (1996); http://dx.doi.org/10.1063/1.117417 (3 pages) | Cited 34 times

Full Text: | Download PDF

Show Abstract
The motion of a dislocation in a strained layer is calculated using continuum elastic theory. Blocking of the moving dislocation by a fixed misfit dislocation across its path is found to be weaker than previously believed. The calculation makes no approximation regarding the shape of the dislocation, and correctly includes the self‐interaction of the moving dislocation. © 1996 American Institute of Physics.
Show PACS
61.72.Lk Linear defects: dislocations, disclinations
68.60.Bs Mechanical and acoustical properties

Voltage shift and deformation in the hysteresis loop of Pb(Zr,Ti)O3 thin film by defects

Eun Gu Lee, Dirk J. Wouters, Geert Willems, and Herman E. Maes

Appl. Phys. Lett. 69, 1223 (1996); http://dx.doi.org/10.1063/1.117418 (3 pages) | Cited 36 times

Full Text: | Download PDF

Show Abstract
Voltage shift and deformation in the hysteresis loop of Pb(Zr,Ti)O3 (PZT) capacitors have been studied by varying the annealing temperature after patterning the top sputter‐deposited Pt electrode using reactive ion etch (RIE) with Ar gas. It was observed that the hysteresis loop of the film was seriously deformed by both sputtering and RIE induced defects. Voltage shift and polarization suppression can be explained by the charge trapping at electrode interfaces and at defect levels in the film, respectively. Space charges trapped at defect levels in the film suppress polarization parallel to poling direction, however, enhance polarization opposite to the poling direction. © 1996 American Institute of Physics.
Show PACS
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers

N. Kirstaedter, O. G. Schmidt, N. N. Ledentsov, D. Bimberg, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, M. V. Maximov, P. S. Kop’ev, and Zh. I. Alferov

Appl. Phys. Lett. 69, 1226 (1996); http://dx.doi.org/10.1063/1.117419 (3 pages) | Cited 129 times

Full Text: | Download PDF

Show Abstract
We present gain measurements and calculations for InAs/GaAs quantum dot injection lasers. Measurements of the modal gain and estimation of the confinement factor by transmission electron microscopy yield an exceptionally large material gain of 6.8(±1)×104 cm−1 at 80 A cm−2. Calculations including realistic quantum dot energy levels, dot size fluctuation, nonthermal coupling of carriers in different dots, and band filling effects corroborate this result. A large maximum differential gain of 2×10−12 cm2 at 20 A cm−2 is found. The width of the gain spectrum is determined by participation of excited quantum dot states. We record a low transparency current density of 20 A cm−2. All experiments are carried out at liquid nitrogen temperature. © 1996 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors

Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field‐effect transistors

Zhifang Fan, S. N. Mohammad, Ö. Aktas, A. E. Botchkarev, A. Salvador, and Hadis Morkoç

Appl. Phys. Lett. 69, 1229 (1996); http://dx.doi.org/10.1063/1.117420 (3 pages) | Cited 35 times

Full Text: | Download PDF

Show Abstract
Electrical characteristics of high performance of AlGaN/GaN modulation doped field‐effect transistors (MODFETs) grown by reactive molecular beam epitaxy method are studied experimentally. The maximum measured drain‐source current is 490 mA/mm, which saturates at a relatively low drain‐source voltage VDS. The transconductance increases with decreasing gate length reaching a value of 186 mS/mm in devices with a gate length of LG=2 μm. Breakdown voltages of about 90 V have also been exhibited by devices with gate length LG=2 μm and drain‐gate separation LDG=1 μm. To our knowledge, these are the best values obtained so far from GaN MODFETs which we attribute to the suppression of leakage currents and improved materials structure of the devices. © 1996 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Single charge and confinement effects in nano‐crystal memories

Sandip Tiwari, Farhan Rana, Kevin Chan, Leathen Shi, and Hussein Hanafi

Appl. Phys. Lett. 69, 1232 (1996); http://dx.doi.org/10.1063/1.117421 (3 pages) | Cited 179 times

Full Text: | Download PDF

Show Abstract
Use of nano‐crystals of silicon in close proximity (1.5–4.5 nm) of a transistor channel lead to structures with pronounced memory where effects due to discrete number of electrons, confinement‐induced subbands in inversion layers and discrete energy states in quantum dots, random charge distribution in quantum dots, and transmission through a strong barrier are very important. Experimental results show plateaus in threshold voltage at low temperatures, spaced nearly equally apart, and indicative of single electron effects. Varying the oxide thickness shows strong influence on speed and charge retention. We confirm the strength of confinement effects and discuss the underlying considerations in the operation of the memory that are related to the reduced volume, strength of the barrier, and random distribution of the trapped charge in nano‐crystals. © 1996 American Institute of Physics.
Show PACS
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
73.61.Cw Elemental semiconductors
85.30.Tv Field effect devices
85.40.Qx Microcircuit quality, noise, performance, and failure analysis

Fabrication of arrays of large step‐free regions on Si(001)

So Tanaka, C. C. Umbach, Jack M. Blakely, Ruud M. Tromp, and M. Mankos

Appl. Phys. Lett. 69, 1235 (1996); http://dx.doi.org/10.1063/1.117422 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
In this letter we describe a method for producing large areas of Si(001) surfaces which are (i) free of atomic steps and (ii) arranged in regular patterns on the wafer. The first step is the fabrication of a two‐dimensional grating structure using e‐beam lithography and reactive ion etching. This grating is then annealed within the appropriate temperature window in ultrahigh vacuum to produce the desired array of (001) step‐free regions. We illustrate the success of the method through the use of low‐energy electron microscopy for a few repeat spacings on test structures each extending over a 3×3 mm2 area. Alternative processing steps are discussed as well as application to submicron device technology. © 1996 American Institute of Physics.
Show PACS
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.05.J- Electron diffraction and scattering
81.65.Cf Surface cleaning, etching, patterning
85.40.Hp Lithography, masks and pattern transfer

Influences of deposition temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursor

Kow Ming Chang, Shih Wei Wang, Chin Jen Wu, Ta Hsun Yeh, Chii Horng Li, and Ji Yi Yang

Appl. Phys. Lett. 69, 1238 (1996); http://dx.doi.org/10.1063/1.117423 (3 pages) | Cited 14 times

Full Text: | Download PDF

Show Abstract
In this letter, fluorinated silicon oxide (FxSiOy) films were deposited in the electron cyclotron resonance (ECR) chemical vapor deposition system with SiH4, O2, and CF4 as the reaction gases. The CF4, in contrast to SiF4 or FSi(OC2H5)3 used in other reports, is an indirect fluorinating source. The fluorinating mechanism is similar to that of the etching of oxide by fluorocarbon plasma, therefore, the thermal stability of the incorporated fluorine must strongly depend on the deposition temperature. It is found that the thermal stability and moisture resistance are greatly improved by increasing the deposition temperature. However, the higher deposition temperature also results in a higher compressed stress and dielectric constant. Besides, to get the moisture resistance, the deposition temperature must be above 300 °C. On the other hand, ECR‐SiO2 (without fluorination), even deposited at room temperature, is shown to have a good water resistance. Therefore, by choosing deposition temperature for FxSiOy to have enough thermal tolerance and capping with ECR‐SiO2, the moisture resistor is suggested for the inter metal dielectric applications.
Show PACS
68.60.Dv Thermal stability; thermal effects
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Influence of the size dispersion on the emission spectra of the Si nanostructures

J. B. Khurgin, E. W. Forsythe, G. S. Tompa, and B. A. Khan

Appl. Phys. Lett. 69, 1241 (1996); http://dx.doi.org/10.1063/1.117424 (3 pages) | Cited 30 times

Full Text: | Download PDF

Show Abstract
A systematic study of the size dependence of the photoluminescence spectra of Si quantum nanocrystals in the SiO2 matrix has been performed. The results have been fitted to a quantum‐confinement model that includes the nanocrystal size dispersion rather than a specific size of the nanocrystal. This, in conjunction with the results [Z. H. Lu, D. J. Lockwood, and J.‐M. Baribeau, Nature 378, 258 (1995)] for amorphous Si layers serves as a strong confirmation of the confinement‐induced nature of the photoluminescence. © 1996 American Institute of Physics.
Show PACS
61.46.-w Structure of nanoscale materials
78.55.Ap Elemental semiconductors

The deposition of a GaS epitaxial film on GaAs using an exchange reaction

Q.‐S. Xin, S. Conrad, and X.‐Y. Zhu

Appl. Phys. Lett. 69, 1244 (1996); http://dx.doi.org/10.1063/1.117425 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
A GaS thin film has been formed epitaxially on GaAs(100) using a photoassisted growth‐etching reaction between H2S and the GaAs substrate. In the reaction, the growth of GaS is accomplished via the replacement of As in the GaAs lattice by the photochemically generated S atom, while As is etched from the substrate as arsenic sulfide. The surface of the resulting GaS thin film is characterized by a sharp (2×1) low energy electron diffraction pattern, indicating excellent crystalline quality. © 1996 American Institute of Physics.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.Rv Passivation
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Double‐crystal x‐ray diffraction from silicon film on insulator

Lei Zhong, Kenro Hayashi, and Ryuji Takeda

Appl. Phys. Lett. 69, 1247 (1996); http://dx.doi.org/10.1063/1.117426 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
This letter describes a simple and straightforward approach to the thickness measurement of silicon film on insulator, whose double‐crystal x‐ray diffraction curve is found of a sinusoidal slit function, as predicted by the dynamical scattering theory. © 1996 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.05.C- X-ray diffraction and scattering

Stability of undoped hydrogenated amorphous silicon multilayer film grown with alternating substrate temperature

Jong‐Hwan Yoon and Czang‐Ho Lee

Appl. Phys. Lett. 69, 1250 (1996); http://dx.doi.org/10.1063/1.117427 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
Undoped hydrogenated amorphous silicon films have been grown in multilayers with alternating substrate temperature between optimal and nonoptimal temperature for device‐quality films. Compared to the single layer films grown at optimal substrate temperature, the multilayer films show improved stability in the light‐induced state. Under intense light illumination of 3 W/cm2, the steady‐state defect density of the layered film reaches a saturation of 2×1016 cm−3, while the single layer film saturates at 6×1016 cm−3. It is found that in the completely degraded state, the photoconductivity in the multilayer film is also improved by a factor of 3 compared to the single layer film. © 1996 American Institute of Physics.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.40.Sz Deposition technology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.61.Jc Amorphous semiconductors; glasses
73.20.Hb Impurity and defect levels; energy states of adsorbed species
Page 1 of 3 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close