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6 Jan 1997

Volume 70, Issue 1, pp. 1-140

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Large third-order optical nonlinearity in Au:SiO2 composite films near the percolation threshold

H. B. Liao, R. F. Xiao, J. S. Fu, P. Yu, G. K. L. Wong, and Ping Sheng

Appl. Phys. Lett. 70, 1 (1997); http://dx.doi.org/10.1063/1.119291 (3 pages) | Cited 133 times

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Very large third-order optical nonlinearity, χ(3) ∼ 2.5×10−6 esu, measured by a degenerate four wave mixing method using a short pulse (70 picosecond) laser, has been found in the rapid-thermal annealed Au:SiO2 composite films at concentrations below the Au percolation threshold. The dependence of the χ(3) on Au concentration, p, follows a cubic power law. The maximum figure of merit, χ(3)/α (with α being the absorption coefficient) is about 10−11 esu cm. We explain this result as due to local field enhancement arising from the Mie resonance of the Au nanoclusters, with strong interaction between the nanoclusters further promoting the effect. © 1997 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.66.Sq Composite materials

Enhanced absorption by stimulated emission in three excited states of Er3+ in yttrium aluminum garnet

Yoshinobu Maeda and Masatoshi Migitaka

Appl. Phys. Lett. 70, 4 (1997); http://dx.doi.org/10.1063/1.119302 (3 pages) | Cited 12 times

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Using a laser diode modulated at 250 and 500 MHz, dependence of enhanced absorption on both sample length and temperature was investigated in an erbium doped yttrium aluminum garnet crystal. The transmitted laser intensity decreased with a decay time of 300 ps for sample lengths greater than 3.0 mm and temperatures higher than 50 K when the incident laser intensity increased. In addition, an emission peak was observed near 835 nm corresponding to the transition from the 4S3/2 level to the 4I13/2 in Er3+. It was suggested that the enhanced absorption was caused by stimulated emission in three excited states. © 1997 American Institute of Physics.
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42.70.Hj Laser materials
42.50.-p Quantum optics
78.45.+h Stimulated emission

Using microcontact printing to generate amplitude photomasks on the surfaces of optical fibers: A method for producing in-fiber gratings

John A. Rogers, Rebecca J. Jackman, George M. Whitesides, Jefferson L. Wagener, and Ashish M. Vengsarkar

Appl. Phys. Lett. 70, 7 (1997); http://dx.doi.org/10.1063/1.119313 (3 pages) | Cited 25 times

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This letter describes a method for producing in-fiber gratings that reduces the effects of mechanical and optical instabilities limiting other methods. In this technique, opaque lines formed on the outside of the fiber using a procedure known as microcontact printing, serve as an amplitude photomask for exposure to ultraviolet light. Long-period fiber optic attenuators formed by ths technique demonstrate its advantages. © 1997 American Institute of Physics.
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42.81.Bm Fabrication, cladding, and splicing
42.79.Dj Gratings

Integrated intracavity quasi-phase-matched second harmonic generation based on periodically poled Nd:LiTaO3

Kazi Sarwar Abedin, Takehiro Tsuritani, Manabu Sato, and Hiromasa Ito

Appl. Phys. Lett. 70, 10 (1997); http://dx.doi.org/10.1063/1.119321 (3 pages) | Cited 25 times

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Integrated intracavity quasi-phase-matched second harmonic generation (QPM-SHG) has been demonstrated in a periodically domain inverted Nd:LiTaO3 crystal which functions simultaneously as a gain and nonlinear medium. Lasing at 1.082 μm and simultaneous QPM-SHG at 541 nm has been established by pumping near 806 nm. The effect of doping on the domain reversal voltage of LiTaO3 and the photorefractive effect have also been investigated. It is found that optical damage can be avoided by heating above 80 °C. © 1997 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.80.Dj Domain structure; hysteresis
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Spontaneous emission factor in oxide confined vertical-cavity lasers

D. V. Kuksenkov, H. Temkin, K. L. Lear, and H. Q. Hou

Appl. Phys. Lett. 70, 13 (1997); http://dx.doi.org/10.1063/1.119288 (3 pages) | Cited 10 times

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We report on measurements of the spontaneous emission factor for oxide-confined InGaAs vertical cavity surface emitting lasers. The spontaneous emission factor is determined as a function of the active layer volume from the measurement of small-signal harmonic distortion at threshold. For a 3×3 μm oxide aperture device we obtain spontaneous emission factor of 4.2⋅10−2 at room temperature. © 1997 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Sa Microcavity and microdisk lasers

Soft x-ray pulse generation from femtosecond laser-produced plasma with reduced debris using a metal-doped glass target

H. Nakano, T. Nishikawa, and N. Uesugi

Appl. Phys. Lett. 70, 16 (1997); http://dx.doi.org/10.1063/1.119289 (3 pages) | Cited 10 times

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We have demonstrated soft x-ray short pulse generation from femtosecond laser-produced plasma with much lower debris using metal-doped glass as a target. Soft x-ray emission (50–200 Å) from a gold-doped glass target was about 40% of that from a solid gold target while the density of gold in the doped-glass was less than 0.001 vol % and the target was transparent at the wavelength of the laser light. Due to the low metal density, the particulate deposition, which is one of the serious obstacles to putting laser-produced plasma x-ray into practical use, was greatly reduced by the use of metal-doped glass as a target. © 1997 American Institute of Physics.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.38.-r Laser-plasma interactions
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Fiber Sagnac interferometer temperature sensor

A. N. Starodumov, L. A. Zenteno, D. Monzon, and E. De La Rosa

Appl. Phys. Lett. 70, 19 (1997); http://dx.doi.org/10.1063/1.119290 (3 pages) | Cited 41 times

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A modified Sagnac interferometer-based fiber temperature sensor is proposed. Polarization independent operation and high temperature sensitivity of this class of sensors make them cost effective instruments for temperature measurements. A comparison of the proposed sensor with Bragg grating and long-period grating fiber sensors is derived. A temperature-induced spectral displacement of 0.99 nm/K is demonstrated for an internal stress birefringent fiber-based Sagnac interferometer. © 1997 American Institute of Physics.
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07.20.Dt Thermometers
42.81.Pa Sensors, gyros
07.60.Vg Fiber-optic instruments
07.60.Ly Interferometers

Optical force microscopy with silicone rubber waveguides

S. Herminghaus, M. Riedel, P. Leiderer, M. Bastmeyer, and C. Stürmer

Appl. Phys. Lett. 70, 22 (1997); http://dx.doi.org/10.1063/1.119292 (3 pages) | Cited 10 times

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A simple technique is described for optically imaging the lateral distribution of normal forces exerted onto a flat surface. It is based on the detuning of a silicone rubber planar waveguide by the forces to be investigated. The method is demonstrated by imaging the contact line force of a sessile water droplet on the surface, with a force resolution better than μN. It is shown that the lateral resolution may be much better than the decay length of the waveguide modes used. © 1997 American Institute of Physics.
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07.60.-j Optical instruments and equipment
68.03.-g Gas-liquid and vacuum-liquid interfaces
87.80.-y Biophysical techniques (research methods)

Laser emission of a flash-lamp pumped Rhodamine 6 G solid copolymer solution

Oscar G. Calderón, J. M. Guerra, A. Costela, I. García-Moreno, and R. Sastre

Appl. Phys. Lett. 70, 25 (1997); http://dx.doi.org/10.1063/1.119293 (3 pages) | Cited 12 times

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A Rhodamine 6 G solid solution in a copolymer of 2 hydroxyethyl methacrylate and methyl methacrylate have been flash-lamp pumped in an untuned laser cavity. The pumping energy threshold to obtain laser emission is 20 percent higher than in equivalent methanol solutions. With a flash-lamp electrical excitation average energy of 150 joules per pulse, no photodegradation was observed in the laser emission after more than 30 pumping pulses. There was an absence of local irregular fluctuations found typically in high Fresnel number dye lasers. An interpretation based on the assumption of stereospecificity in the lodging cavity of dye molecules, is consistent with the high photostability and the absence of local fluctuations obtained with this polymeric solid-state laser. © 1997 American Institute of Physics.
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42.55.Mv Dye lasers
42.60.Pk Continuous operation

Noise gain in single quantum well infrared photodetectors

A. Carbone and P. Mazzetti

Appl. Phys. Lett. 70, 28 (1997); http://dx.doi.org/10.1063/1.119294 (3 pages) | Cited 8 times

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A new approach to the calculation of current noise in single quantum well infrared photodetectors is proposed. The modulation noise due to the fluctuation of the emitter barrier potential is taken into account by considering the correlation between the elementary pulses constituting the excess current injected from the emitter when the quantum well is depleted by electrons. A simple relationship between the noise gain and the photoconductive gain of the device is obtained. A comparison with experiments is also reported. © 1997 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.50.Td Noise processes and phenomena
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Model near field calculations for optical data storage readout

A. Madrazo and M. Nieto-Vesperinas

Appl. Phys. Lett. 70, 31 (1997); http://dx.doi.org/10.1063/1.119295 (3 pages) | Cited 7 times

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We investigate the near field distribution of light diffracted from deep grooves of sub-wavelength lateral dimensions, carved on a flat metallic surface. It is shown that, in spite of multiple interaction, the reflected field presents, for s polarization, peaks very localized on the groove positions, and whose amplitude increases with the groove depth. For p polarization, however, the near field does not follow the surface profile. This permits us to establish for s polarization a threshold in order to distinguish signals produced on reflection from grooves having different profiles. This is of guidance in diffractive modeling of readout systems of high density optical disks. © 1997 American Institute of Physics.
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42.79.Vb Optical storage systems, optical disks
42.25.Fx Diffraction and scattering

Absorption spectra of Se and HgI2 chains in channels of AlPO4-5 single crystal

Z. K. Tang, Michael M. T. Loy, Jiesheng Chen, and Ruren Xu

Appl. Phys. Lett. 70, 34 (1997); http://dx.doi.org/10.1063/1.119296 (3 pages) | Cited 17 times

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The absorption spectra are reported for isolated Se and HgI2 semiconductor chains accommodated in AlPO4-5 (AFI) channels of diameter 7.3 Å. The lowest electronic excitation states of the isolated chains are shifted to higher energy from the band edge transitions of their bulk crystals. The blue shifts are qualitatively explained by the quantum confinement effects of carriers in a one-dimensional wire. The experimental result of the Se/AFI is in good agreement with the theoretical expectation based on the effective-mass-approximation. The result of the HgI2/AFI, however, does not agree with the calculation. The different behaviors of the Se/AFI and the HgI2/AFI are expected to result from their different electronic structures. © 1997 American Institute of Physics.
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78.40.Fy Semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Improvement of ultrathin gate oxide and oxynitride integrity using fluorine implantation technique

Prasenjit Chowdhury, Anthony I. Chou, Kiran Kumar, Chuan Lin, and Jack C. Lee

Appl. Phys. Lett. 70, 37 (1997); http://dx.doi.org/10.1063/1.119297 (3 pages) | Cited 10 times

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The effects of fluorine on ultrathin gate oxide and oxynitride (∼40 Å) have been studied. The incorporation of fluorine was done by fluorine ion implantation into polycrystalline silicon (polysilicon) gate followed by a high-temperature drive-in step. It has been found that the integrity of oxide has been improved with the incorporation of fluorine as demonstrated by the reduction of stress-induced leakage current and interface trap generation. Furthermore, unlike thicker dielectrics (>100 Å) for which the charge-to-breakdown (QBD) values decrease with increasing fluorine concentration, QBD’s remain the same as those of the control samples for the ultrathin thickness regime. The mechanism for oxide quality improvement by F will also be discussed in the letter. © 1997 American Institute of Physics.
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85.40.Ry Impurity doping, diffusion and ion implantation technology
85.30.De Semiconductor-device characterization, design, and modeling
61.72.uf Ge and Si

InAsSbP/InAsSb/InAs laser diodes (λ=3.2 μm) grown by low-pressure metal–organic chemical-vapor deposition

J. Diaz, H. Yi, A. Rybaltowski, B. Lane, G. Lukas, D. Wu, S. Kim, M. Erdtmann, E. Kaas, and M. Razeghi

Appl. Phys. Lett. 70, 40 (1997); http://dx.doi.org/10.1063/1.119298 (3 pages) | Cited 12 times

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We report metal–organic chemical-vapor deposition-grown double heterostructure InAsSbP/InAsSb/InAs diode lasers emitting at 3.2 μm operating at temperatures up to 220 K with threshold current density of 40 A/cm2 at 77 K and characteristic temperature up to 42 K. Output powers as high as 260 mW in pulse mode and 60 mW in continuous wave operation have been obtained from an uncoated 100 μm stripe-width broad-area laser at 77 K. Comparison with theory shows that there is no significant nonradiative recombination mechanism for these lasers at 77 K. © 1997 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.Fd III-V semiconductors

Heat capacity measurements of Sn nanostructures using a thin-film differential scanning calorimeter with 0.2 nJ sensitivity

S. L. Lai, G. Ramanath, L. H. Allen, and P. Infante

Appl. Phys. Lett. 70, 43 (1997); http://dx.doi.org/10.1063/1.119299 (3 pages) | Cited 24 times

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We have developed a new thin-film differential scanning calorimetry technique that has extremely high sensitivity of 0.2 nJ. By combining two calorimeters in a differential measurement configuration, we have measured the heat capacity and melting process of Sn nanostructures formed via thermal evaporation with deposition thickness down to 1 Å. The equivalent resolution of the calorimeter is 1 nanogram in mass or 0.4 Å in thickness. We have observed a decrease of up to 120°C in the melting point of Sn nanostructures. © 1997 American Institute of Physics.
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65.40.-b Thermal properties of crystalline solids
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems
07.20.Fw Calorimeters
68.60.Dv Thermal stability; thermal effects

Ferroelectric properties of (Pb0.97La0.03)(Zr0.66Ti0.34)0.9875O3 films deposited on Si3N4-coated Si substrates by pulsed laser deposition process

Tzu-Feng Tseng, Rong-Pyng Yang, Kuo-Shung Liu, and I-Nan Lin

Appl. Phys. Lett. 70, 46 (1997); http://dx.doi.org/10.1063/1.119300 (3 pages) | Cited 23 times

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(Pb0.97La0.03)(Zr0.66Ti0.34)0.9875O3, PLZT, thin films deposited on either LaNiO3 (LNO) or LNO/Pt coated Si3N4/Si substrates, possessing good ferroelectric properties, were successfully obtained by the pulsed laser deposition process. Using LNO/Pt as double layer electrodes not only resulted in PLZT films with superior electric properties, but also of better handling endurance. The former is attributed to the low surface resistivity of electrode materials (i.e., ρLNO/Pt = 0.5 mΩ cm) due to the bypassing effect of the Pt layer, whereas the latter is ascribed to the induction of compressive stress on PLZT and LNO layers due to a relatively larger thermal expansion coefficient (CTE) of the Pt layer. The ferroelectric properties of (PLZT )LNO/pt films were Pr = 16.5 μC/cm2 and Ec = 63.5 kV/cm, while the dielectric constant and leakage current were K = 1.028 and Je ⩽ 8×10−6 A/cm2 (under 150 kV/cm), respectively. Their fatigue life was longer than 2×109cycles under action of 300 kV/cm pulse. © 1997 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Fg Pulsed laser ablation deposition

Heterogeneous nucleation of coherently strained islands during epitaxial growth of Ge on Si(110)

M. Krishnamurthy, Bi-Ke Yang, J. D. Weil, and C. G. Slough

Appl. Phys. Lett. 70, 49 (1997); http://dx.doi.org/10.1063/1.119301 (3 pages) | Cited 17 times

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We report on the molecular beam epitaxial growth of Ge on Si(110) surfaces. High temperature cleaning (oxide desorption) results in the formation of shallow faceted pits distributed randomly on the Si(110) surface. Deposition of Ge at temperatures between 600 and 725 °C leads to preferential nucleation along the pit edges forming elongated islands, which subsequently grow to compact three-dimensional coherent islands. The observation of strained islands in close proximity to each other offers insights into their nucleation behavior and strain relaxation. Our observations suggest heterogeneous nucleation as a possible method for fabricating assemblies of quantum dots. © 1997 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Cy Elemental semiconductors

The growth of AlGaAs–InGaAs quantum-well structures by molecular beam epitaxy: Observation of critical interdependent effects

Robert N. Bicknell-Tassius, Kyeong Lee, April S. Brown, Georgianna Dagnall, and Gary May

Appl. Phys. Lett. 70, 52 (1997); http://dx.doi.org/10.1063/1.119303 (3 pages) | Cited 4 times

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Critical interdependent effects have been observed in the growth of AlGaAs/InGaAs quantum-well structures by molecular beam epitaxy. It is shown that statistical experimental design is an effective method for quickly optimizing complex device structures. This technique is very useful for the optimization of processes with a large number of interdependent parameters, and allows for the clear visualization and separation of complex interwoven effects. In the present work, we show the importance of the oxide desorption process for the optimal growth of AlGaAs-containing structures. © 1997 American Institute of Physics.  
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.05.Ea III-V semiconductors

Inductive-coupling-nitrogen-plasma process for suppression of boron penetration in BF2+-implanted polycrystalline silicon gate

T. S. Chao and C. H. Chu

Appl. Phys. Lett. 70, 55 (1997); http://dx.doi.org/10.1063/1.119304 (2 pages) | Cited 2 times

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A novel and simple method to suppress the boron penetration in the BF2+-implanted polycrystalline silicon gate is presented by using the inductive-coupling-nitrogen-plasma (ICNP) process. A nitrogen layer was found at the SiO2/Si interface by using this method. The result shows that the sample with the ICNP treatment exhibits a good suppression of boron penetration and improved electrical characteristics. © 1997 American Institute of Physics.
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85.30.Tv Field effect devices
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
85.40.Ry Impurity doping, diffusion and ion implantation technology

Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN

B. P. Luther, S. E. Mohney, T. N. Jackson, M. Asif Khan, Q. Chen, and J. W. Yang

Appl. Phys. Lett. 70, 57 (1997); http://dx.doi.org/10.1063/1.119305 (3 pages) | Cited 115 times

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We report on a study of Al and Ti/Al contacts to n-type GaN. Al contacts on n-GaN (7×1017 cm−3) annealed in forming gas at 600 °C reached a minimum contact resistivity of 8×10−6 Ω cm2 and had much better thermal stability than reported by previous researchers. Ti/Al (35/115 nm) contacts on n-GaN (5×1017 cm−3) had resistivities of 7×10−6 and 5×10−6 Ω cm2 after annealing in Ar at 400 °C for 5 min and 600 °C for 15 s, respectively. Depth profiles of Ti/Al contacts annealed at 400 °C showed that low contact resistance was only achieved after Al diffused to the GaN interface. We propose that the mechanism for Ohmic contact formation in Ti/Al contacts annealed in the 400–600 °C range includes Ti reducing the GaN native oxide and an Al–Ti intermetallic coming into intimate contact with the GaN. © 1997 American Institute of Physics.
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73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts
68.60.Dv Thermal stability; thermal effects

The suppression of misfit dislocation introduction in heavily carbon doped GaAs

S. P. Westwater, T. J. Bullough, T. B. Joyce, B. R. Davidson, and L. Hart

Appl. Phys. Lett. 70, 60 (1997); http://dx.doi.org/10.1063/1.119306 (3 pages)

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The relaxation of heavily carbon doped GaAs, grown on (001) GaAs substrates was investigated using transmission electron microscopy and x-ray diffraction. Misfit dislocation introduction occurred only significantly above Matthews and Blakeslee’s critical thickness, with the onset of relaxation being delayed as the C concentration was increased. The resultant strain relaxation was highly anisotropic with the introduction of As-cored misfit dislocations being totally suppressed at the highest C levels, resulting in cracking of the epilayer. Locking of As-cored partial dislocations and a reduction in misfit dislocation velocity is proposed as the cause of the anisotropy and lack of relaxation. © 1997 American Institute of Physics.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Lk Linear defects: dislocations, disclinations

Oxidation of Si(100) in nitric oxide at low pressures: An x-ray photoelectron spectroscopy study

A. Kamath, D. L. Kwong, Y. M. Sun, P. M. Blass, S. Whaley, and J. M. White

Appl. Phys. Lett. 70, 63 (1997); http://dx.doi.org/10.1063/1.119307 (3 pages) | Cited 30 times

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Ultrathin (8–23 Å) silicon oxynitrides have been studied in the temperature range of 560–1000 °C in 4 Torr of NO using a sequential growth and analysis approach. X-ray photoelectron spectroscopy indicates that with increasing growth temperature and time, a bonding structure with predominantly Si–O rather than Si–N formation is favored. Simultaneously, the average volume fraction of N (N/N+O) in the dielectric decreases, as a consequence of which the N1s binding energy increases by 0.2–0.8 eV from its initial value of 397.8 eV at a thickness of 8 Å. A correlation of the electrical characteristics of NO grown oxynitrides with nitrogen content and location has been made. A film growth mechanism that takes into account the removal of previously incorporated N by NO is also proposed. © 1997 American Institute of Physics.
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81.65.Mq Oxidation
81.05.Cy Elemental semiconductors
77.55.-g Dielectric thin films
79.60.Dp Adsorbed layers and thin films

Electrical properties of oxides grown on strained Si using microwave N2O plasma

L. K. Bera, S. K. Ray, D. K. Nayak, N. Usami, Y. Shiraki, and C. K. Maiti

Appl. Phys. Lett. 70, 66 (1997); http://dx.doi.org/10.1063/1.119308 (3 pages) | Cited 6 times

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Microwave plasma oxidation (below 200 °C) of strained Si on relaxed Si1−xGex buffer layers in N2O ambient is reported. The electrical properties of grown oxide have been characterized using a metal-oxide-semiconductor structure. Fixed oxide charge density and mid-gap interface state density are found to be 6×1010 cm−2 and 1.2×1011 cm−2 eV−1, respectively. The oxide on strained-Si samples has exhibited hole trapping behavior and moderately low interface state generation on constant current stressing. © 1997 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
81.65.Mq Oxidation

Micro-Raman characterization of the electronic properties of Si-doped GaAs layers grown on patterned substrates

J. Gerster, J. M. Schneider, C. Ehret, W. Limmer, R. Sauer, and H. Heinecke

Appl. Phys. Lett. 70, 69 (1997); http://dx.doi.org/10.1063/1.119309 (3 pages) | Cited 3 times

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The coupled modes of plasmons and LO phonons appearing in the Raman spectra of highly doped GaAs layers have been investigated in order to study the local incorporation character of Si on different crystal facets. The Si-doped GaAs layers were grown by molecular beam epitaxy on patterned GaAs (100) substrates with etched ridges forming (111)A and (111)B facets with a lateral extension of a few micrometers. The local type and concentration of free charge carriers have been determined from an analysis of the coupled-mode Raman spectra. It is shown that Si acts as a donor in the material grown on the (111)B facets and as an acceptor in the material grown on the (111)A facets. © 1997 American Institute of Physics.
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78.30.Fs III-V and II-VI semiconductors
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.Ea III-V semiconductors

Femtosecond differential transmission measurements on low temperature GaAs metal–semiconductor–metal structures

Ulrich D. Keil, Jørn M. Hvam, Sönke Tautz, Stefan U. Dankowski, Peter Kiesel, and Gottfried H. Döhler

Appl. Phys. Lett. 70, 72 (1997); http://dx.doi.org/10.1063/1.119310 (3 pages) | Cited 10 times

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We report on differential transmission measurements on low temperature grown (LT)-GaAs with and without applied electrical fields at different wavelengths. Electrical fields up to 100 kV/cm can be applied via an interdigitated contact structure to our LT GaAs samples which have been removed from the substrate by epitaxial lift off. In the presence of an electric field, both, the absorption bleaching due to phase space filling and field induced absorption changes due to the Franz–Keldysh effect contribute to the transmission changes. We observe an extended carrier lifetime with applied field. The response time of a biased metal–semiconductor–metal detector, therefore, exceeds the carrier life time of the substrate material. © 1997 American Institute of Physics.
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73.40.Sx Metal-semiconductor-metal structures
72.20.Ht High-field and nonlinear effects
78.47.-p Spectroscopy of solid state dynamics
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