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10 Mar 1997

Volume 70, Issue 10, pp. 1189-1325

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Generation of 10-THz transients from a subpicosecond optical pulse and a 1-THz field in quantum wells

D. S. Citrin

Appl. Phys. Lett. 70, 1189 (1997); http://dx.doi.org/10.1063/1.118815 (3 pages) | Cited 6 times

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A quantum well simultaneously subjected to a 1 kV/cm, 1 THz field, and a 100 fs optical pulse is shown to result in emission of a sub-ps strong upshifted ∼10 THz transient. © 1997 American Institute of Physics.  
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.47.-p Spectroscopy of solid state dynamics
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Unidirectional operation of waveguide diode ring lasers

James J. Liang, Stanley T. Lau, Michael H. Leary, and Joseph M. Ballantyne

Appl. Phys. Lett. 70, 1192 (1997); http://dx.doi.org/10.1063/1.118527 (3 pages) | Cited 29 times

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A method of providing asymmetric feedback in the triangular ring laser structure was devised through the simple alterations of the waveguide shape. Two kinds of alterations were designed and implemented, one being the “optical diode,” the other being the tapered waveguide. Unidirectional operation was achieved for the ring lasers, with a single-beam slope efficiency of 0.23 W/A, which was the highest single-beam slope efficiency reported for semiconductor ring lasers. © 1997 American Institute of Physics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Wd Fiber lasers
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Measurement of absorption line wing structure by wavelength modulation spectroscopy

A. M. Bullock, A. N. Dharamsi, W. P. Chu, and L. R. Poole

Appl. Phys. Lett. 70, 1195 (1997); http://dx.doi.org/10.1063/1.118528 (3 pages) | Cited 5 times

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The application of wavelength modulation absorption spectroscopy in the characterization of lineshape functions of molecular spectra is discussed theoretically, and experimental results for the weak spin-forbidden, magnetic dipole-driven transitions of the oxygen A band are provided. Factors affecting the accuracy of the method are discussed, and it is shown that the technique allows one to accurately probe absorption lineshape functions by using a simple, cost-effective apparatus. The advantages of using detection harmonics greater than the commonly used second are discussed, including an investigation of wing structures of absorption lines and the measurement of collision cross sections. © 1997 American Institute of Physics.
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33.70.Jg Line and band widths, shapes, and shifts
33.20.-t Molecular spectra

XeF(C–A) laser pumped by formed-ferrite open discharge radiation

M. L. Sentis, V. I. Tcheremiskine, Ph. C. Delaporte, L. D. Mikheev, and V. S. Zuev

Appl. Phys. Lett. 70, 1198 (1997); http://dx.doi.org/10.1063/1.118529 (3 pages) | Cited 6 times

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A study of a high-power blue–green XeF(C–A) laser photolytically pumped by an open discharge along a formed-ferrite surface is presented. A laser output energy of 1.3 J was extracted from a gas mixture of 4 Torr XeF2, 230 Torr N2, and 680 Torr Kr, with a stable optical resonator. With a flat optical resonator, a laser output energy of 1 J was obtained. In this case, we observed an oscillating regime of the laser power, which indicates that the unsaturated gain value was close to the laser action threshold. Perspectives of optical pumping schemes are presented. © 1997 American Institute of Physics.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Generation of ultraviolet light by frequency doubling of a red laser diode in a first-order periodically poled bulk LiTaO3

Kiminori Mizuuchi, Kazuhisa Yamamoto, and Makoto Kato

Appl. Phys. Lett. 70, 1201 (1997); http://dx.doi.org/10.1063/1.118530 (3 pages) | Cited 47 times

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Frequency doubling of a 684 nm laser diode in a first-order periodically poled LiTaO3 is presented. Controlling the side growth of the domain inverted region during high-voltage pulse application, a uniform nonlinear grating with a period of 1.7 μm and 50% duty cycle was fabricated over 10 mm interaction length in a 150 μm thick LiTaO3 substrate. A 342 nm wavelength of harmonic ultraviolet light was generated in a single pass through the domain-inverted structure. © 1997 American Institute of Physics.  
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42.72.Bj Visible and ultraviolet sources
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Evidence by transmission electron microscopy of densification associated to Bragg grating photoimprinting in germanosilicate optical fibers

P. Cordier, S. Dupont, M. Douay, G. Martinelli, P. Bernage, P. Niay, J. F. Bayon, and L. Dong

Appl. Phys. Lett. 70, 1204 (1997); http://dx.doi.org/10.1063/1.118531 (3 pages) | Cited 10 times

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We present the first observation by transmission electron microscopy of glass densification induced by Bragg grating inscription in two germanosilicate single-mode optical fibers. © 1997 American Institute of Physics.
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42.79.Dj Gratings
42.86.+b Optical workshop techniques
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
81.05.Kf Glasses (including metallic glasses)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Visible light emission from Si nanocrystals grown by ion implantation and subsequent annealing

S. Guha, M. D. Pace, D. N. Dunn, and I. L. Singer

Appl. Phys. Lett. 70, 1207 (1997); http://dx.doi.org/10.1063/1.118275 (3 pages) | Cited 64 times

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Photoluminescence (PL), electron spin resonance (ESR), and high resolution transmission electron microscopy (HRTEM) were used to investigate the luminescence mechanism in Si nanocrystals. Si ions were implanted in SiO2 films at 190 keV to a dose of 3×1017/cm2.An intense photoluminescence (PL) band at 755 nm (1.65 eV) was observed when the implanted films were annealed above 800 °C in air or in nitrogen. HRTEM images showed Si nanocrystals of sizes between 1 and 6 nm from these annealed samples. ESR indicated Si dangling bonds. Upon annealing at 900 °C in air a few times, the particle sizes were reduced to less than 2 nm due to oxidation. The red PL band is attributed to emission from Si nanocrystals. © 1997 American Institute of Physics.
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78.55.Ap Elemental semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.46.-w Structure of nanoscale materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
61.72.Cc Kinetics of defect formation and annealing
76.30.Mi Color centers and other defects

Long-range surface plasmon resonances in grating-waveguide structures

S. Glasberg, A. Sharon, D. Rosenblatt, and A. A. Friesem

Appl. Phys. Lett. 70, 1210 (1997); http://dx.doi.org/10.1063/1.118532 (3 pages) | Cited 11 times

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Resonant grating-waveguide structures were used for the excitation of long-range surface plasmons. Resonance spectral bandwidths of 1.9 nm were experimentally measured in both the reflected and transmitted intensities from these structures. Numerical calculations indicate that interference rather than the usual surface plasmon absorption mechanism plays the dominant role in the resonance response when the thickness of the guiding metal layer in the structures is reduced below 10 nm. © 1997 American Institute of Physics.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.79.Gn Optical waveguides and couplers
42.79.Dj Gratings

High-speed optical parametric oscillator pumped with an electronically tuned Ti:sapphire laser

K. Akagawa, S. Wada, and H. Tashiro

Appl. Phys. Lett. 70, 1213 (1997); http://dx.doi.org/10.1063/1.118533 (3 pages) | Cited 7 times

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High-speed and random-access tuning of output wavelengths was achieved in an optical parametric oscillator pumped with an electronically tuned Ti:sapphire laser, which was fully under computer control. The signal and idler wavelengths in 90° phase-matched KTiOPO4 were scanned without mechanical rotation of crystals or mirrors. Signal waves in the range from 1.06 to 1.31 μm and idler waves in the range from 2.27 to 2.97 μm accessed in random order by setting the pumping wavelengths between 713 and 923 nm. © 1997 American Institute of Physics.
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42.65.Yj Optical parametric oscillators and amplifiers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Bh Lenses, prisms and mirrors

Excited-state dynamics of thiophene thin films studied by time-resolved degenerate four-wave mixing

David Harris, Roger Dorsinville, and Takeo Mukai

Appl. Phys. Lett. 70, 1216 (1997); http://dx.doi.org/10.1063/1.118276 (3 pages) | Cited 4 times

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The resonant nonlinear optical response and singlet excited-state dynamics in the thin film of polydithieno (3,2-b; 2′, 3′-d) thiophene are studied by time-resolved degenerate four-wave mixing. Our experimental results, using <1 ps excitation at 635 nm, show that bimolecular decay via exciton–exciton annihilation dominates the temporal response at high intensities, thus decreasing the singlet lifetime. The measured rate constant of the singlet annihilation is k2 = 7.5×10−9 cm3/s. Estimates of the singlet-singlet annihilation, exciton diffusion coefficient, and hopping rate are obtained from the measurements. © 1997 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
71.35.Gg Exciton-mediated interactions
73.50.Dn Low-field transport and mobility; piezoresistance
72.20.Fr Low-field transport and mobility; piezoresistance
73.61.Ph Polymers; organic compounds
72.80.Le Polymers; organic compounds (including organic semiconductors)
72.15.Nj Collective modes (e.g., in one-dimensional conductors)

Tunable InGaAs/GaAs/InGaP laser

N. K. Dutta, W. S. Hobson, J. Lopata, and G. Zydzik

Appl. Phys. Lett. 70, 1219 (1997); http://dx.doi.org/10.1063/1.118534 (2 pages) | Cited 1 time

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The fabrication and performance characteristics of a tunable InGaAs/GaAs/InGaP laser emitting near 980 nm are reported. The tunability is achieved using the thermoelectric effect of the substrate. A tuning range of >6 nm has been demonstrated using ∼ 60 mA of thermoelectric controller current. © 1997 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Ea III-V semiconductors

Thickness variation compensation in a Fabry–Perot modulator array using a self-tuned Fabry–Perot structure

Phil Harvey and Sadik Esener

Appl. Phys. Lett. 70, 1221 (1997); http://dx.doi.org/10.1063/1.118535 (3 pages)

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A method is presented for compensating cavity thickness variations in conventional Fabry–Perot devices through the replacement of the input mirror with a holographic mirror, resulting in a self-tuned Fabry–Perot (STFP) device. The technique is suitable for integrating large arrays of electro-optic Fabry–Perot modulators with silicon circuitry. Experimental results of a STFP modulator are presented showing cavity thickness compensation of an electrooptic 9/65/35 bulk lead lanthanum zirconate titanate crystal having thickness variations corresponding to ∼ 6 Fabry–Perot fringes in a 2.5×2.5 mm2 area. The compensated modulator used an in situ recorded Fe-doped LiNbO3 holographic mirror, and had a uniform backreflection over a 2.5×2.5 mm2 area. © 1997 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Bh Lenses, prisms and mirrors
42.70.Gi Light-sensitive materials
42.40.Eq Holographic optical elements; holographic gratings
85.60.-q Optoelectronic devices
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Ln Holographic recording materials; optical storage media

Biphotonic self-diffraction in azo-doped polymer film

Pengfei Wu, Bingsuo Zou, Xiaochun Wu, Jiren Xu, Xiong Gong, Guilan Zhang, Guoqing Tang, and Wenju Chen

Appl. Phys. Lett. 70, 1224 (1997); http://dx.doi.org/10.1063/1.118536 (3 pages) | Cited 11 times

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A new nonlinear optical phenomenon, biphotonic self-diffraction (BSD), is reported in azo dye doped in polymer matrix. The first-order and the second-order BSD signals are observed in the experiment. It is demonstrated that the dynamic behaviors of the BSD signals are dependent on the cis-trans isomerization of azo molecules by two color lights. © 1997 American Institute of Physics.
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78.66.Qn Polymers; organic compounds
42.65.Sf Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics
42.70.Jk Polymers and organics

Demonstration of a frequency-modulated, pulsed optical parametric oscillator

D. J. Armstrong and A. V. Smith

Appl. Phys. Lett. 70, 1227 (1997); http://dx.doi.org/10.1063/1.118537 (3 pages) | Cited 1 time

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We demonstrate that injection seeding a pulsed optical parametric oscillator with frequency modulated cw light with a modulation period equal to the cavity round-trip time produces pulses that have the same modulated character as the seed. A sensitivity of 10−3 was demonstrated for these pulses in frequency-modulated absorption measurements. © 1997 American Institute of Physics.
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42.65.Yj Optical parametric oscillators and amplifiers
42.79.Hp Optical processors, correlators, and modulators

Optical amplification with neodymium-doped chalcogenide glass fiber

Atsushi Mori, Yasutake Ohishi, Terutoshi Kanamori, and Shoichi Sudo

Appl. Phys. Lett. 70, 1230 (1997); http://dx.doi.org/10.1063/1.118538 (3 pages) | Cited 15 times

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Optical amplification at 1.083 μm with neodymium-doped chalcogenide fiber is observed. The thermal and spectroscopic properties of a new chalcogenide glass system are measured in view of its potential use as a rare-earth host. A maximum internal gain of 6.8 dB is achieved for a pump power of 180 mW. © 1997 American Institute of Physics.  
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42.55.Wd Fiber lasers
78.45.+h Stimulated emission
42.70.Ce Glasses, quartz
42.70.Hj Laser materials

Fabrication and electroluminescence of double-layered organic light-emitting diodes with the Al2O3/Al cathode

F. Li, H. Tang, J. Anderegg, and J. Shinar

Appl. Phys. Lett. 70, 1233 (1997); http://dx.doi.org/10.1063/1.118539 (3 pages) | Cited 135 times

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The effects of a controlled Al2O3 buffer layer on the behavior of highly efficient vacuum evaporated aqua regia-treated indium tin oxide (ITO)/triphenyl diamine (TPD)/8-tris-hydroxyquino-line aluminum Alq3/Al2O3/Al light-emitting diodes are described. It is found that, with a buffer layer of suitable thickness, both current injection and electroluminescence output are significantly enhanced. The enhancement is believed to be due to increased charge carrier density near the TPD/Alq3 interface that results from enhanced electron tunneling, and removal of exciton-quenching gap states that are intrinsic to the Alq3/Al interface. © 1997 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Micromachined aperture probe tip for multifunctional scanning probe microscopy

W. Noell, M. Abraham, K. Mayr, A. Ruf, J. Barenz, O. Hollricher, O. Marti, and P. Güthner

Appl. Phys. Lett. 70, 1236 (1997); http://dx.doi.org/10.1063/1.118540 (3 pages) | Cited 26 times

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A novel micromachined aperture tip has been developed for near-field scanning optical microscopy. The advantages of the new probe over commonly used fiber probes are illustrated. The aperture tip is fabricated in a reliable batch process which has the potential for implementation in micromachining processes of scanning probe microscopy sensors and therefore leads to new types of multifunctional probes. For evaluation purposes, the tip was attached to an optical fiber by a microassembly setup and subsequently installed in a near-field scanning optical microscope. First measurements of topographical and optical near-field patterns demonstrate the proper performance of the hybrid probe. © 1997 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes

Atomic hydrogen enhanced reflow of copper

T. Miyake, H. Petek, K. Takeda, and K. Hinode

Appl. Phys. Lett. 70, 1239 (1997); http://dx.doi.org/10.1063/1.118541 (3 pages) | Cited 6 times

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A low temperature technique for copper metallization using sputter-reflow process is investigated. Metallization of 0.15–1.5 μm prepatterned trenches at a temperature of 320 °C by atomic hydrogen enhanced reflow of sputtered Cu films is described. Debye temperature of a single crystal Cu(110) surface measured by He atom scattering indicates that surface H reduces the surface Cu–Cu bonding strength. Moreover, atomic H efficiently removes oxygen and carbon impurities from the sputtered Cu films at surface temperatures of >150 °C. © 1997 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
63.70.+h Statistical mechanics of lattice vibrations and displacive phase transitions
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Grain boundary misorientation angles and stress-induced voiding in oxide passivated copper interconnects

J. A. Nucci, R. R. Keller, D. P. Field, and Y. Shacham-Diamand

Appl. Phys. Lett. 70, 1242 (1997); http://dx.doi.org/10.1063/1.118942 (3 pages) | Cited 21 times

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Grain boundary misorientations were determined by electron backscattering diffraction for tantalum-encapsulated, copper interconnects which contained thermal-stress-induced voids. The misorientation angles at voided and unvoided line segments were analyzed for two differently heat treated sample types, which were not equally susceptibile to stress voiding. Unvoided line segments contained a larger percentage of low misorientation angle, lower diffusivity boundaries than regions adjacent to voids. In addition, the more void resistant sample type also contained an overall higher proportion of low misorientation angle boundaries than the sample type which exhibited more voiding. The data provide further support for the importance of local variations in microstructure, which control the kinetics of stress void formation and growth. © 1997 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
61.72.Mm Grain and twin boundaries
61.72.Qq Microscopic defects (voids, inclusions, etc.)
66.30.Lw Diffusion of other defects
81.65.Rv Passivation

Low-temperature nitriding of iron through a thin nickel layer

D. K. Inia, M. H. Pröpper, W. M. Arnoldbik, A. M. Vredenberg, and D. O. Boerma

Appl. Phys. Lett. 70, 1245 (1997); http://dx.doi.org/10.1063/1.118542 (3 pages) | Cited 7 times

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We present a new method for nitriding iron at low temperatures. First, iron is coated with a thin layer of nickel ( ∼ 36 nm), after which it is exposed to an NH3 atmosphere at temperatures below 300 °C. Underneath the nickel layer ϵ-Fe3−xN is formed at temperatures as low as 225 °C, while uncovered iron samples show a large uptake of oxygen after the same treatment. The nickel layer prevents the oxidation of iron by impurities in the NH3 gas, and acts as a catalyst for the decomposition of NH3. After decomposition the atomic nitrogen diffuses through the nickel layer towards the iron. With the process described, pore-free iron nitrides can be formed at low temperatures. © 1997 American Institute of Physics.
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81.05.Bx Metals, semimetals, and alloys
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
81.65.Kn Corrosion protection
68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
62.20.Qp Friction, tribology, and hardness
81.40.Pq Friction, lubrication, and wear

Octahedral void defects observed in the bulk of Czochralski silicon

Takemi Ueki, Manabu Itsumi, and Tadao Takeda

Appl. Phys. Lett. 70, 1248 (1997); http://dx.doi.org/10.1063/1.118543 (3 pages) | Cited 17 times

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We found octahedral void defects in the bulk of silicon wafers by using infrared tomography. These voids are often twin type and their sizes are about 100 nm. A 2-nm-thick layer exists on the side walls of the void defects. Our analysis suggests that the 2-nm-thick layer is SiOx. It is believed that the void structure is formed as a result of agglomeration of vacancies during Si–ingot growth. © 1997 American Institute of Physics.
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61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.72.J- Point defects and defect clusters
81.10.Fq Growth from melts; zone melting and refining
81.05.Cy Elemental semiconductors

Interactions at interface between Cu99Ti1 thin films and polyimide

E. Kondoh, T. P. Nguyen, D.-W. Plachke, H. Carstanjen, and E. Arzt

Appl. Phys. Lett. 70, 1251 (1997); http://dx.doi.org/10.1063/1.118525 (3 pages) | Cited 6 times

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Material characteristics and chemistry of the interface formed between Cu99Ti ∼ 1 films and polyimide were investigated. Plasma pretreatment of the polyimide surface and post-metallization annealing were used to modify the interface. Composition analysis data taken from the interface indicated no significant Cu diffusion into the polyimide layer and accretion of nitrogen at the interface. The formation of Cu and Ti compounds by carbonyl bond breaking, suggested by x-ray photoelectron spectroscopy, could explain suppression of Cu diffusion and drastic increase of adhesion strength. © 1997 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
85.40.Ls Metallization, contacts, interconnects; device isolation
68.35.Ct Interface structure and roughness
68.35.Gy Mechanical properties; surface strains
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
66.30.Ny Chemical interdiffusion; diffusion barriers

Evolution of texture at growth of titanium nitride films prepared by photon and ion beam assisted deposition

M. Zeitler, J. W. Gerlach, T. Kraus, and B. Rauschenbach

Appl. Phys. Lett. 70, 1254 (1997); http://dx.doi.org/10.1063/1.118544 (3 pages) | Cited 18 times

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The effect of the film thickness on the evolution of texture of polycrystalline titanium nitride films grown by photon and ion beam assisted deposition has been investigated. The layers were deposited in high-vacuum on (111)Si with the N-ion energy constant at 2 keV and the incident ion/titanium flux ratio constant at 0.66 ions/atom. X-ray pole figure measurements show that the biaxial {001} texture is changed to the biaxial {111} texture with an increase of the film thickness. The texture evolution is explained by the existence of open channeling directions and the minimization of the elastic deformation energy. © 1997 American Institute of Physics.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.55.-a Thin film structure and morphology
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

The role of atomic hydrogen and its influence on the enhancement of secondary electron emission from C(001) surfaces

T. P. Humphreys, R. E. Thomas, D. P. Malta, J. B. Posthill, M. J. Mantini, R. A. Rudder, G. C. Hudson, R. J. Markunas, and C. Pettenkofer

Appl. Phys. Lett. 70, 1257 (1997); http://dx.doi.org/10.1063/1.118545 (3 pages) | Cited 25 times

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The role of chemisorbed hydrogen in the enhancement of low-energy electron emission from natural type IIb C(001) diamond surfaces has been investigated. A hydrogen induced low-energy emission peak, whose intensity was found to be a linear function of surface coverage, was observed. The direct observation of emission from vacuum level states in the photoemission spectra has determined a negative electron affinity of ∼0.4 eV for the hydrogenated C(001)-1×1 surface. Constant initial states photoemission has unambiguously identified the electron emission process with the escape of electrons from bulk electron states at the conduction-band minimum. © 1997 American Institute of Physics.
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79.20.Hx Electron impact: secondary emission
73.20.At Surface states, band structure, electron density of states
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
79.60.Dp Adsorbed layers and thin films

Electrical conduction of buried SiO2 layers analyzed by photon stimulated electron tunneling

V. V. Afanas’ev and A. Stesmans

Appl. Phys. Lett. 70, 1260 (1997); http://dx.doi.org/10.1063/1.118546 (3 pages) | Cited 3 times

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The conductivity of buried SiO2 layers produced by implantation of oxygen ions into silicon was compared with the photon stimulated electron tunneling from Si into SiO2. The latter process is found to originate from defects located in interfacial SiO2 layers with an electron energy level 2.8 eV below the oxide conduction band. The dark and photon induced currents show a correlated dependence on the electric field strength in the oxide, and both increase with the Si enrichment of the oxide, thus advancing the isolated defects as the common origin of both currents. The same defects were also observed in thermally grown and deposited oxides, so they appear as intrinsic imperfections related to the excess silicon in SiO2. © 1997 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.80.Sk Insulators
73.40.Gk Tunneling
73.50.Pz Photoconduction and photovoltaic effects
73.20.At Surface states, band structure, electron density of states
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